CN106093471B - Piezoresistance type acceleration sensor and its manufacturing method in a kind of face containing self-checking function - Google Patents

Piezoresistance type acceleration sensor and its manufacturing method in a kind of face containing self-checking function Download PDF

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Publication number
CN106093471B
CN106093471B CN201610589538.XA CN201610589538A CN106093471B CN 106093471 B CN106093471 B CN 106093471B CN 201610589538 A CN201610589538 A CN 201610589538A CN 106093471 B CN106093471 B CN 106093471B
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China
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layer
self
acceleration sensor
checking function
piezoresistance type
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CN106093471A (en
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周志健
朱二辉
陈磊
杨力建
邝国华
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Guangdong Hewei Integrated Circuit Technology Co., Ltd.
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GUANGDONG HEWEI INTEGRATED CIRCUIT TECHNOLOGY Co Ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/124Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by semiconductor devices comprising at least one PN junction, e.g. transistors

Abstract

The present invention provides piezoresistance type acceleration sensors in a kind of face containing self-checking function, it is made based on SOI wafer, the SOI wafer is disposed with substrate, intermediate oxide layer, device layer, it is adulterated using side, pressure drag item is formed in the part cantilever beam side wall of acceleration transducer, part cantilever beam side wall forms self-test electrode;The pressure drag item that side wall is formed can reduce axial crosstalk, the mode of self-test is the deformation that acceleration transducer cantilever beam caused by being inputted using electrostatic force analog acceleration is generated, to detect the performance of acceleration transducer, detection mode is completely compatible with IC detection probe platform.Acceleration transducer is discharged using front, processing consistency is high, and device area is small.The present invention also provides a kind of production methods of piezoresistance type acceleration sensor in face containing self-checking function, realize the structure and processing technology that can carry out piezoresistance type acceleration sensor in the face of wafer scale self-test.

Description

Piezoresistance type acceleration sensor and its manufacture in a kind of face containing self-checking function Method
Technical field
The present invention relates to semiconductor processing technologies, and in particular to pressure resistance type acceleration sensing in the face containing self-checking function Device and its manufacturing method.
Background technique
The wafer scale calibration and detection of piezoresistance type acceleration sensor are extremely difficult at present.There are no mature skills for industrial circle Art, some test producers (such as AFORE company of Finland) provide the piezoresistance type acceleration testing scheme of wafer scale, but need Special test fixture and probe card are customized, so that the fixed assets investment and cost of test are very high.
Piezoresistance type acceleration sensor can only do the inspection of module level after being packaged into module product using testboard at present It surveys.Once there is acceleration transducer failure, it further includes being packaged into for module that is lost, which includes not only acceleration transducer, Originally other devices and in module integrated, such as control IC.Therefore industrial circle is badly in need of a kind of piezoresistance type acceleration sensor, can To carry out test, the calibration of wafer scale, bad products are just rejected before being packaged into module, are reduced since sensor failure causes Cost allowance.
United States Patent (USP) US6389899B1 disclose it is a kind of using SOI wafer production pressure resistance type face in acceleration transducer, The side of cantilever beam is lightly doped, and pressure drag item is formed;Heavy doping is carried out in the other side of cantilever beam, forms electrical leads.Its Pressure drag doping techniques use angle-tilt ion method for implanting, and such method is not conventional cmos ion implanting mode, and it is special to need Equipment, be unfavorable for the foundries transfer of volume production, while being also unfavorable for the industry of chip without integrated wafer scale self-checking function Change test job.
Also article discloses the production method for disclosing acceleration transducer in pressure resistance type face, the generation type of pressure drag is to use The growth of selectivity, the silicon face only exposed can just grow pressure drag item, and the silicon face for being oxidized silicon protection will not then give birth to It is long.But its pressure drag item that can only grow n-type doping, and the pressure drag item of n-type doping has asymmetry with stress sensitive coefficients Property, therefore the sensor linearity produced is poor.
Summary of the invention
It is an object of the present invention in view of the deficiencies of the prior art, pressure drag in a kind of face containing self-checking function is provided Formula acceleration transducer and its manufacturing method are to solve the above technical problems.
Present invention technical solution used for the above purpose are as follows:
Piezoresistance type acceleration sensor in a kind of face containing self-checking function is based on SOI wafer, the SOI wafer It is disposed with substrate, intermediate oxide layer, device layer, which is characterized in that mask layer is provided on the device layer, it is described Device layer is provided with heavily doped region, through the mask layer, the device layer, the release groove of the intermediate oxide layer, relief hole, Pass through the release groove.Relief hole etching discharges the movable structure of acceleration transducer, and the movable structure has cantilever beam, Side wall a part of the cantilever beam is provided with pressure drag item, and side wall a part of the cantilever beam is provided with self-test electrode.
Preferably, the device layer is n-type doping.
Preferably, the heavily doped region is p-type doping.
Preferably, the pressure drag item and self-test electrode are lightly doped for p-type.
Preferably, the device layer, the intermediate oxide layer are provided with isolation channel, and the ditch non-intercommunicating cells lateral wall is insulation wall, And the isolation channel is filled, the release groove has with the isolation channel to partially overlap, the release groove and the heavily doped region With partially overlapping.
Preferably, the mask layer is provided with contact hole, in contact hole deposited metal and with heavily doped region be in electrical contact, pass through The metal connecting line of exposure mask layer surface deposition draws to form sensor metal pins.
Preferably, the mask layer is provided with passivation layer, by the metal for etching the passivation layer exposure sensor Pin.
Preferably, the passivation layer is provided with a mass block.
Preferably, protection cap is additionally provided in the SOI wafer.
The present invention also provides piezoresistance type acceleration sensor manufacturing methods in a kind of face containing self-checking function, are based on SOI wafer, the SOI wafer are disposed with substrate, intermediate oxide layer, device layer, comprising the following steps:
In the one layer mask layer of device layer growth regulation, the saturating mask layer of graphical and etching, the device layer and institute It states intermediate oxide layer and forms isolation channel;
Removal first layer mask layer is laid equal stress on new production second layer mask layer, graphically, forms heavy doping in the device layer Area;
Graphically, the mask layer, the device layer, the intermediate oxide layer are etched and forms release groove, relief hole;
Wall doping is carried out, forms pressure drag item, cantilever beam one in a part of side of the cantilever beam of acceleration sensor structure Surface forms self-test electrode.
Preferably, further include following steps:
One layer of insulation wall is made in the ditch non-intercommunicating cells lateral wall;
And fill the isolation channel.
Preferably, the release groove has with the isolation channel and partially overlaps, the release groove and heavily doped region tool It partially overlaps.
Preferably, further include following steps:
Graphically, and the mask layer is etched, forms contact hole;
Deposited metal and heavily doped region, which are realized, in the contact hole is in electrical contact, and the metal deposited by exposure mask layer surface Line draws to form sensor metal pins.
Preferably, further include following steps:
Passivation layer and routing hole that is graphical, etching sensor metal pins are deposited on the mask layer, etch institute It states passivation layer and exposes the release groove and the relief hole.
Preferably, further include following steps:
One mass block of passivation layer deposition above the acceleration transducer movable structure.
Preferably, further include following steps:
It is etched by the release groove and the relief hole, discharges the movable structure of acceleration transducer.
Preferably, further include following steps:
A protection cap is bonded in the SOI wafer.
Compared with prior art, piezoresistance type acceleration sensor in face of the invention forms pressure drag item in cantilever beam side wall, The pressure drag item that side wall is formed can reduce axial crosstalk, discharge acceleration transducer using front, processing consistency is high, device side Product is small.The mode of self-test is the deformation for causing acceleration transducer cantilever beam to generate using electrostatic force analog acceleration, thus The performance of acceleration transducer is detected, detection mode is completely compatible with IC detection probe platform.
The invention is specifically described with reference to the accompanying drawing.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of first embodiment of the invention.
Fig. 2 is the flow chart of the manufacturing method of first embodiment of the invention.
Fig. 3 A-3L is the process flow diagram of the manufacturing method of first embodiment of the invention.
Fig. 4 is the structural schematic diagram of second embodiment of the invention semi-finished product.
Fig. 5-Fig. 7 is the schematic diagram of first embodiment of the invention.
Specific embodiment
Attached drawing 1 is piezoresistance type acceleration sensor in a kind of face containing self-checking function of first embodiment of the invention Structural schematic diagram, Fig. 2 are the flow chart of the manufacturing method of first embodiment of the invention, and Fig. 3 A-3L is first embodiment of the invention Manufacturing method process flow diagram.
As shown in Fig. 1,2,3A-3L, piezoresistance type acceleration sensor and its manufacture in a kind of face containing self-checking function Method:
A referring to Fig. 3, the embodiment of the present invention are based on SOI wafer 1, are disposed with substrate 101, intermediate oxide layer 102 and device Part layer 103, it is preferable that 103 doping type of device layer uses N-type.
Referring to Fig. 2, step 201, referring also to Fig. 3 Ba-3Bb, 3Ba are cross-sectional view, and 3Ba is schematic top plan view. One layer mask layer 104 of production is grown on 103 surface of device layer, graphically and etches mask layer 104, device layer 103 and centre Oxide layer 102 forms isolation channel 105.
Step 202, referring also to Fig. 3 C, 3C are cross-sectional view.Side wall electricity is carried out absolutely to etched open isolation channel 105 Edge processing, forms one layer of insulation wall 106.The method for making insulation wall 106, can be using low pressure chemical vapor deposition low stress Silicon nitride material, and the silicon nitride material of 105 bottom of crystal column surface and isolation channel is removed, only in 105 side wall retained nitrogen of isolation channel Silicon nitride material ultimately forms one layer of insulation wall 106.Other materials such as thermal silicon oxide material or thermal oxidation silicon can also be used With silicon nitride double layer material etc..
Step 203, referring also to Fig. 3 Da-3Db, 3Da are cross-sectional view, and 3Da is schematic top plan view.
Isolation channel 105 is filled with material 107.The material 107 of isolation channel 105 is filled, can be formed sediment using low pressure chemical meteorology The polycrystalline silicon material of product low stress, and the polycrystalline silicon material on mask layer 104 is removed, the polycrystalline being only retained in isolation channel 105 Silicon.Optional other methods include silicon oxide deposition material, and remove the silica material etc. on mask layer 104.
Step 204, referring also to Fig. 3 Ea-3Eb, 3Ea are cross-sectional view, and 3Eb is schematic top plan view.Remove mask Layer 104, and the one layer of new mask layer 104 that regrow;Graphically and form heavily doped region 108.The mode of heavy doping can be from Son injection, is also possible to diffusion technique, is the prior art, this will not be repeated here.Preferably, using p-type heavy doping.
Step 205, referring also to Fig. 3 F, 3F are cross-sectional view.Graphical and etch mask layer 104 forms contact Hole 109.
Step 206, referring also to Fig. 3 Ga-3Gb, 3Gb-A, 3Ga are cross-sectional view, and 3Gb is schematic top plan view, 3Gb-A is the partial enlarged view of part A in 3Gb figure.Graphical release groove 111 and relief hole 112.It is first made on mask layer 104 Make a layer photoresist layer 110 and graphical release groove 111, relief hole 112.Wherein release groove 111 and isolation channel 105 have part It is overlapped, release groove 111 partially overlaps with heavily doped region 108, referring to Fig. 3 Gb-A.
Step 207, referring also to Fig. 3 Ha-3Hb, 3Ha are cross-sectional view, and 3Hb is schematic top plan view.In release groove In 111 slots, in 112 hole of relief hole, mask layer 104, device layer 103 and intermediate oxide layer 102, the release groove of formation are etched 111, relief hole 112 directly penetrates into substrate layer 101, so that mask layer 104, device layer 103 and intermediate oxide layer 102 be made to release Put the structure 118 that slot 111 forms acceleration transducer.Then photoresist layer 110 is removed.
Step 208, referring also to Fig. 3 Ia-3Ib, 3Ia are cross-sectional view, and 3Ib is schematic top plan view.Side doping, Acceleration sensor structure 118 has cantilever beam 119, and in part, 119 side of cantilever beam forms pressure drag item 113, part cantilever beam 119 sides form self-test movable electrode 120, and form the fixed electrode 121 of self-test.Preferably, side doping is light using p-type Doping, doping way use method of diffusion.Such as using solid-state Pyrex as p-type doped source, then after spreading completion, Exposed surface and side wall meeting residual oxidization silicon materials, remove the oxidation of crystal column surface and release groove 111,112 bottom of relief hole Silicon materials retain the silica material of release groove 111,112 side wall of relief hole (for subsequent release in the process to the guarantor of side wall Shield);If taking other doped sources, deposit protective layer after completion is adulterated, and removes crystal column surface and discharges trench bottom Protective layer retains the protective layer of release groove 111,112 side wall of relief hole.
Step 209, referring also to Fig. 3 Ja-3Jb, 3Ja are cross-sectional view, and 3Jb is schematic top plan view.Deposit metal And it is graphical, form the metal pins of acceleration transducer.Metal is deposited, and graphical, forms acceleration transducer metal and draw Foot 114.
Step 210, referring also to Fig. 3 K, 3K are cross-sectional view.Simultaneously figure dissolves routing hole to deposit passivation layer 115, Etch Passivation 115 exposes release groove 111, relief hole 112.
Step 211, referring also to Fig. 3 L, 3L are cross-sectional view.Structure is discharged, protection cap 116 is bonded.Pass through release Slot 111, relief hole 112 discharge sensor movable structure, and method for releasing can use the dry isotropic etch technology of silicon, example Such as use xenon difluoride gas;The bonding of protection cap 116 can be bonded using metal eutectic, such as aluminium germanium eutectic bonding technology, Also organic bonding material, such as benzocyclobutene can be used.
Fig. 4 is the structure semi-finished product schematic diagram of second embodiment of the invention.Second embodiment of the invention and the present invention first The difference of embodiment is, one piece of mass block 117 is arranged, on passivation layer 115 to increase the matter of acceleration transducer mass block Amount, improves the sensitivity of sensor.Mass block can be additional using semiconducter process using such as electro-coppering.
The principle of the embodiment of the present invention:
Referring to Fig. 5-Fig. 7, as shown in figure 5, wherein 301-308 is sensor metal pins, 401-404 is acceleration sensitive Pressure drag item, 501 be that test fixed electrode 1,502 be that test fixed electrode 2,503 be to test movable electrode.Acceleration sensitive pressure drag Item forms acceleration sensitive pressure drag electric bridge as shown in FIG. 6, to detection faces by heavily doped region, isolation channel and metal line The size of interior acceleration.
The schematic illustration of its self-test is as shown in fig. 7, can with test testing fixed electrode 1 (or fixed electrode 2) Apply voltage between moving electrode, due to electrostatic force, testing movable electrode will drive the generation of acceleration transducer movable structure The case where displacement in face, simulation is inputted by acceleration load in face;This test method does not have to apply real acceleration Load, it is only necessary to apply electricity load, facilitate carry out on-line testing, detection mode is completely completely compatible with IC detection probe platform.
Certainly, the invention can also have other transformation, it is not limited to which above embodiment, those skilled in the art are had Standby knowledge, can also various changes can be made without departing from the inventive concept of the premise, such variation should all fall in this hair In bright protection scope.

Claims (14)

1. piezoresistance type acceleration sensor in a kind of face containing self-checking function, be based on SOI wafer, the SOI wafer according to It is secondary to be provided with substrate, intermediate oxide layer, device layer, which is characterized in that mask layer, the device are provided on the device layer Part layer is provided with heavily doped region, through the mask layer, the device layer, the release groove of the intermediate oxide layer, relief hole, leads to The movable structure of the release groove, relief hole release acceleration transducer is crossed, the movable structure has cantilever beam, part cantilever Side wall a part of beam is provided with pressure drag item, and side wall a part of part cantilever beam is provided with self-test electrode;The device layer, The intermediate oxide layer is provided with isolation channel, and the ditch non-intercommunicating cells lateral wall is insulation wall, and fills isolation channel, the release groove and institute It states isolation channel and has and partially overlap, the release groove and the heavily doped region, which have, to partially overlap.
2. piezoresistance type acceleration sensor in the face according to claim 1 containing self-checking function, which is characterized in that institute The device layer stated is n-type doping.
3. piezoresistance type acceleration sensor in the face according to claim 1 containing self-checking function, which is characterized in that institute The heavily doped region stated is p-type doping.
4. piezoresistance type acceleration sensor in the face according to claim 1 containing self-checking function, which is characterized in that institute It states pressure drag item and self-test electrode is lightly doped for p-type.
5. piezoresistance type acceleration sensor in the face according to claim 1 containing self-checking function, which is characterized in that institute State mask layer and be provided with contact hole, in contact hole deposited metal and with heavily doped region be in electrical contact, deposited by exposure mask layer surface Metal connecting line draws to form sensor metal pins.
6. piezoresistance type acceleration sensor in the face according to claim 5 containing self-checking function, which is characterized in that institute It states mask layer and is provided with passivation layer, by etching the passivation layer exposure sensor metal pins.
7. piezoresistance type acceleration sensor in the face according to claim 6 containing self-checking function, which is characterized in that institute It states passivation layer and is provided with a mass block.
8. according to piezoresistance type acceleration sensor in the face containing self-checking function described in any claim of 1-7, It is characterized in that, is additionally provided with protection cap in the SOI wafer.
9. piezoresistance type acceleration sensor manufacturing method in a kind of face containing self-checking function is based on SOI wafer, described SOI wafer is disposed with substrate, intermediate oxide layer, device layer, which comprises the following steps:
In the one layer mask layer of device layer growth regulation, it is graphical and etch thoroughly the mask layer, the device layer and it is described in Between oxide layer formed isolation channel;One layer of insulation wall is made in the ditch non-intercommunicating cells lateral wall;Fill the isolation channel;
Removal first layer mask layer is laid equal stress on new production second layer mask layer, graphically, forms heavily doped region in the device layer;
It etches the mask layer, the device layer, the intermediate oxide layer and forms release groove, relief hole;The release groove and institute It states isolation channel and has and partially overlap, the release groove and the heavily doped region, which have, to partially overlap;
Side doping is carried out, forms pressure drag item, part cantilever beam one in a part of side of the part cantilever beam of acceleration transducer Surface forms self-test electrode.
10. piezoresistance type acceleration sensor manufacturing method in the face according to claim 9 containing self-checking function, special Sign is, further includes following steps:
Graphically, and the mask layer is etched, forms contact hole;
Deposited metal and heavily doped region, which are realized, in the contact hole is in electrical contact, and the metal connecting line deposited by exposure mask layer surface Extraction forms sensor metal pins.
11. piezoresistance type acceleration sensor manufacturing method in the face according to claim 10 containing self-checking function, It is characterized in that, further includes following steps:
Passivation layer and routing hole that is graphical, etching sensor metal pins are deposited on the mask layer, are etched described blunt Change layer and exposes the release groove and the relief hole.
12. piezoresistance type acceleration sensor manufacturing method in the face according to claim 11 containing self-checking function, It is characterized in that, further includes following steps:
One mass block of passivation layer deposition above the acceleration transducer movable structure.
13. piezoresistance type acceleration sensor manufacturing method in the face according to claim 12 containing self-checking function, It is characterized in that, further includes following steps:
By the release groove and the relief hole, the movable structure of acceleration transducer is etched and discharged.
14. being manufactured according to piezoresistance type acceleration sensor in the face containing self-checking function described in any one of 9-13 claim Method, which is characterized in that further include following steps:
A protection cap is bonded in the SOI wafer.
CN201610589538.XA 2016-07-26 2016-07-26 Piezoresistance type acceleration sensor and its manufacturing method in a kind of face containing self-checking function Active CN106093471B (en)

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CN110045151A (en) * 2019-04-16 2019-07-23 西安交通大学 A kind of accelerometer with high g values chip and preparation method thereof of cross deformation girder construction
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CN103344785A (en) * 2013-07-22 2013-10-09 杭州电子科技大学 Capacitive micro inertial sensor with self calibration function
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