WO2022004383A1 - Substrate processing system and substrate processing method - Google Patents

Substrate processing system and substrate processing method Download PDF

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Publication number
WO2022004383A1
WO2022004383A1 PCT/JP2021/022847 JP2021022847W WO2022004383A1 WO 2022004383 A1 WO2022004383 A1 WO 2022004383A1 JP 2021022847 W JP2021022847 W JP 2021022847W WO 2022004383 A1 WO2022004383 A1 WO 2022004383A1
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WIPO (PCT)
Prior art keywords
thickness
substrate
contact
measurement
grinding
Prior art date
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PCT/JP2021/022847
Other languages
French (fr)
Japanese (ja)
Inventor
信貴 福永
Original Assignee
東京エレクトロン株式会社
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Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to JP2022533832A priority Critical patent/JP7470792B2/en
Priority to KR1020237002144A priority patent/KR20230029819A/en
Priority to CN202180044998.3A priority patent/CN115769345A/en
Publication of WO2022004383A1 publication Critical patent/WO2022004383A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q17/00—Arrangements for observing, indicating or measuring on machine tools
    • B23Q17/20—Arrangements for observing, indicating or measuring on machine tools for indicating or measuring workpiece characteristics, e.g. contour, dimension, hardness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • This disclosure relates to a substrate processing system and a substrate processing method.
  • Patent Document 1 describes a method for measuring a thickness of a wafer, in which a two-point in-process gauge is provided on the surface of the wafer and the surface of the chuck in a state where the wafer is vacuum-adsorbed to the chuck during or after the grinding process. It is disclosed that a pair of contacts are applied and the difference in measured heights is measured as the thickness of the wafer.
  • one surface of the substrate is held by the holding means in the processing apparatus, and laser light is irradiated toward the other surface of the substrate in a direction substantially orthogonal to the other surface, and the laser is used.
  • a method of receiving an interference wave of light reflected from one surface of light and light reflected from another surface and deriving the thickness of a substrate based on the waveform of the interference wave is disclosed.
  • the technology according to the present disclosure appropriately switches from the thickness measurement by the contact type thickness measurement mechanism to the thickness measurement by the non-contact type thickness measurement mechanism in the thickness measurement of the substrate during the grinding process.
  • One aspect of the present disclosure is a substrate processing system for processing a substrate, which controls the operation of a grinding unit for grinding the machined surface of the substrate, a thickness measuring unit for measuring the thickness of the substrate, and the thickness measuring unit.
  • the thickness measuring unit has a contact-type measuring mechanism that contacts the machined surface of the substrate to measure the thickness of the substrate, and the thickness measuring unit measures the thickness of the substrate without contacting the substrate.
  • the control unit includes a non-contact measurement mechanism for measuring, and the control unit controls the thickness measurement operation of the substrate by the contact type measurement mechanism when the substrate is ground by the grinding unit, and the non-contact measurement.
  • Controlling the measurable determination operation by the mechanism is performed in parallel, and in the control of the measurable determination operation, one thickness measurement value acquired by the non-contact measurement mechanism and the one thickness measurement are performed.
  • the difference value from other thickness measurement values acquired immediately before the value is continuously calculated over time, and the calculated difference value is continuously within a predetermined threshold value. It is determined that the thickness of the substrate can be measured, and the non-contact measurement mechanism controls to start the thickness measurement operation of the substrate.
  • the present disclosure in the thickness measurement of the substrate during the grinding process, it is possible to appropriately switch from the thickness measurement by the contact type thickness measurement mechanism to the thickness measurement by the non-contact type thickness measurement mechanism.
  • a semiconductor substrate (hereinafter, simply referred to as a "wafer") in which a plurality of devices such as electronic circuits are formed on the front surface is ground on the back surface of the wafer to make the wafer thinner. Is being done. Grinding of the back surface of the wafer is performed, for example, by bringing the grinding wheel of the grinding means into contact with the back surface of the wafer while rotating the substrate holding means while holding the front surface of the wafer by the substrate holding means.
  • This wafer grinding process is performed while measuring the thickness of the wafer in order to appropriately process the wafer as a product to the target thickness.
  • the thickness of the wafer being ground is adjusted by contacting one of the contacts of the two-point in-process gauge with the chuck surface and the other with the upper surface of the wafer (the back surface which is the grinding surface).
  • a contact-type thickness measuring means for measuring height is disclosed.
  • non-contact type thickness measuring means has a limitation on the thickness of the wafer that can be measured (detection range: for example, 5 to 300 ⁇ m), and the thickness of the wafer deviates from this detection range. It is necessary to use a contact type thickness measuring means together with the above. When the contact type and non-contact type thickness measuring means are used in combination in this way, the thickness measuring means is switched from the contact type to the non-contact type during the grinding process of the wafer. At that time, there was a possibility that the thickness of the wafer could not be measured stably.
  • the thickness measuring means is a contact type at a stage where the thickness of the wafer cannot be stably and accurately measured by the non-contact type thickness measuring means, for example, when the back surface of the wafer, which is the incident surface of the laser beam, is roughened.
  • the non-contact type thickness measuring means for example, when the back surface of the wafer, which is the incident surface of the laser beam, is roughened.
  • the technique according to the present disclosure has been made in view of the above circumstances, and in the thickness measurement of the substrate during the grinding process, the thickness measurement by the contact type thickness measurement mechanism is switched to the thickness measurement by the non-contact type thickness measurement mechanism.
  • the processing apparatus as the wafer processing system and the wafer processing method according to the present embodiment will be described with reference to the drawings.
  • the elements having substantially the same functional configuration are designated by the same reference numerals, so that duplicate description will be omitted.
  • the wafer W as a substrate is thinned.
  • the wafer W is a semiconductor wafer such as a silicon wafer or a compound semiconductor wafer.
  • a device D is formed on the surface Wa, and a protective tape T for protecting the device D is adhered to the surface Wa.
  • processing such as grinding is performed on the back surface Wb of the wafer W, whereby the wafer W is thinned.
  • the processing apparatus 1 has a configuration in which the loading / unloading station 2 and the processing station 3 are integrally connected.
  • a cassette C capable of accommodating a plurality of wafers W is loaded / unloaded from the outside.
  • the processing station 3 includes various processing devices that perform desired processing on the wafer W.
  • the loading / unloading station 2 is provided with a cassette mounting table 10. Further, on the Y-axis positive direction side of the cassette mounting table 10, a wafer transfer area 20 is provided adjacent to the cassette mounting table 10. The wafer transfer region 20 is provided with a wafer transfer device 22 configured to be movable on a transfer path 21 extending in the X-axis direction.
  • the wafer transfer device 22 has a transfer fork 23 that holds and conveys the wafer W.
  • the transport fork 23 is configured to be movable in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis.
  • the wafer transfer device 22 is configured to be able to transfer the wafer W to the cassette C of the cassette mounting table 10, the alignment unit 50, and the first cleaning unit 60.
  • the processing station 3 includes a transport unit 30 that transports the wafer W, a grinding unit 40 that grinds the wafer W, an alignment unit 50 that adjusts the horizontal orientation of the wafer W before the grinding process, and a wafer W after the grinding process. It has a first cleaning unit 60 for cleaning the back surface Wb of the wafer W, and a second cleaning unit 70 for cleaning the front surface Wa of the wafer W after the polishing process.
  • the transport unit 30 is an articulated robot equipped with a plurality of, for example, three arms 31. Each of the three arms 31 is configured to be rotatable. A transport pad 32 that attracts and holds the wafer W is attached to the arm 31 at the tip. Further, the arm 31 at the base end is attached to an elevating mechanism 33 that elevates and elevates the arm 31 in the vertical direction.
  • the transfer unit 30 is configured to be able to transfer the wafer W to the delivery position A0 of the grinding unit 40, the alignment unit 50, the first cleaning unit 60, and the second cleaning unit 70.
  • the grinding unit 40 is provided with a rotary table 41.
  • Four chucks 42 for sucking and holding the wafer W are provided on the rotary table 41.
  • a porous chuck is used for the chuck 42 to adsorb and hold the surface Wa (protective tape T) of the wafer W.
  • the surface of the chuck 42 that is, the holding surface of the wafer W, has a convex shape in which the central portion protrudes from the end portion in the side view.
  • the protrusion of the central portion is minute, in the illustration of the following description, the protrusion of the central portion of the chuck 42 may be shown large for the sake of clarity of the explanation.
  • the chuck 42 is held by the chuck base 43.
  • the chuck base 43 is provided with an inclination adjusting mechanism 44 for adjusting the relative inclination of each grinding portion (rough grinding portion 80, middle grinding portion 90, and finish grinding portion 100) and the chuck 42.
  • the tilt adjusting mechanism 44 can tilt the chuck 42 and the chuck base 43, whereby the relative tilt between the various grinding portions at the machining positions A1 to A3 and the upper surface of the chuck 42 can be adjusted.
  • the configuration of the inclination adjusting mechanism 44 is not particularly limited, and can be arbitrarily selected as long as the relative angle (parallelism) of the chuck 42 with respect to the grinding wheel can be adjusted.
  • the four chucks 42 can be moved to the delivery position A0 and the processing positions A1 to A3 by rotating the rotary table 41. Further, each of the four chucks 42 is configured to be rotatable around a vertical axis by a rotation mechanism (not shown).
  • the wafer W is delivered by the transport unit 30.
  • a rough grinding portion 80 is arranged at the processing position A1 to roughly grind the wafer W.
  • a medium grinding unit 90 is arranged at the processing position A2, and the wafer W is medium-grinded.
  • a finish grinding unit 100 is arranged at the processing position A3 to finish grind the wafer W.
  • the rough grinding unit 80 includes a rough grinding wheel 81 having an annular rough grinding wheel on the lower surface, a mount 82 for supporting the rough grinding wheel 81, a spindle 83 for rotating the rough grinding wheel 81 via the mount 82, and, for example. It has a drive unit 84 containing a motor (not shown). Further, the rough grinding portion 80 is configured to be movable in the vertical direction along the support column 85 shown in FIG.
  • the medium grinding unit 90 has the same configuration as the rough grinding unit 80. That is, the medium-grinding unit 90 has a medium-grinding wheel 91, a mount 92, a spindle 93, a drive unit 94, and a support column 95 including an annular medium-grinding grindstone.
  • the grain size of the grindstone of the medium grinding wheel is smaller than the grain size of the grindstone of the coarse grinding wheel.
  • the finish grinding unit 100 has the same configuration as the rough grinding unit 80 and the medium grinding unit 90. That is, the finish grinding unit 100 has a finish grinding wheel 101 including an annular finish grinding wheel, a mount 102, a spindle 103, a drive unit 104, and a support column 105.
  • the grain size of the grindstone of the finish grinding wheel is smaller than the grain size of the grindstone of the medium grinding wheel.
  • a thickness measuring unit for measuring the thickness of the wafer W during the grinding process is provided at the delivery position A0 of the grinding unit 40 and the processing positions A1 to A3.
  • the processing positions A1 and A2 are provided with a contact-type thickness measuring mechanism (hereinafter referred to as "contact-type measuring mechanism 110"), and the delivery position A0 and the processing position A2.
  • A3 is provided with a non-contact type thickness measuring mechanism (hereinafter referred to as "non-contact measuring mechanism 120").
  • the contact type measuring mechanism 110 has a height gauge 111 on the chuck side, a height gauge 112 on the wafer side, and a calculation unit 113.
  • the height gauge 111 includes a probe 114, and the tip of the probe 114 comes into contact with the surface of the chuck 42, that is, the holding surface of the wafer W, thereby measuring the height position of the holding surface.
  • the height gauge 112 includes a probe 115, and the tip of the probe 115 comes into contact with the back surface Wb, which is the machined surface of the wafer W, to measure the height position of the back surface Wb.
  • the calculation unit 113 calculates the total thickness of the wafer W by subtracting the measured value of the height gauge 111 from the measured value of the height gauge 112.
  • the total thickness of the wafer W is the thickness of the main body of the wafer W, the thickness of the device D, and the thickness of the protective tape T.
  • the thickness measurement range of the wafer W by the contact type measuring mechanism 110 is, for example, 0 to 2000 ⁇ m.
  • the contact type measuring mechanism 110 calculates the total thickness of the wafer W by contacting the height gauges 111 and 112 with the front surface of the chuck 42 and the back surface Wb of the wafer W, respectively.
  • the thickness data calculated by the contact type measuring mechanism 110 is not limited to this total thickness.
  • the protective tape T is obtained from the measured total thickness.
  • the thickness of the device D may be further subtracted to calculate the thickness of the main body of the wafer W.
  • the non-contact measurement mechanism 120 has a sensor 121 and a calculation unit 122 as shown in FIG.
  • the sensor 121 a sensor that measures the thickness of the main body of the wafer W without contacting the wafer W is used, and for example, a white confocal type optical system sensor is used.
  • the sensor 121 irradiates the wafer W with light having a predetermined wavelength band, and further receives the reflected light reflected from the front surface Wa of the wafer W and the reflected light reflected from the back surface Wb.
  • the calculation unit 122 calculates the thickness of the main body of the wafer W as pulse data based on both reflected light received by the sensor 121.
  • the thickness measurement range of the wafer W by the non-contact measurement mechanism 120 is, for example, 5 to 300 ⁇ m.
  • the configuration of the contact type measuring mechanism 110 and the non-contact measuring mechanism 120 is not limited to this embodiment, and any configuration can be adopted.
  • a white confocal optical system sensor is used for the sensor 121 of the non-contact measurement mechanism 120, but the configuration of the non-contact measurement mechanism 120 is not limited to this, and the thickness of the main body of the wafer W is not limited to this.
  • Any measuring mechanism can be used as long as it is measured in a non-contact manner.
  • a plurality of sensors 121 may be provided.
  • the light emitted from the sensor 121 is not particularly limited, and may be pulsed light or continuous light as long as it can be received by the sensor 121 as reflected light.
  • both the contact type measuring mechanism 110 and the non-contact measuring mechanism 120 are provided as the thickness measuring unit at the processing position A2. Then, at the processing position A2, as will be described later, the thickness measuring unit is switched according to the thickness of the wafer W being ground and the state of the processed surface (back surface Wb), that is, the contact type measuring mechanism 110 to the non-contact measuring mechanism 120. The switch to is made. The details of the switching operation of the thickness measuring unit will be described later.
  • the above processing device 1 is provided with a control unit 130.
  • the control unit 130 is, for example, a computer equipped with a CPU, a memory, or the like, and has a program storage unit (not shown).
  • the program storage unit stores a program that controls the processing of the wafer W in the processing apparatus 1. Further, the program storage unit further stores a program for controlling the switching operation of the thickness measuring unit at the above-mentioned processing position A2.
  • the program may be recorded on a storage medium H that can be read by a computer, and may be installed from the storage medium H on the control unit 130.
  • the cassette C containing a plurality of wafers W is placed on the cassette mounting table 10 of the loading / unloading station 2.
  • the wafer W is taken out from the cassette C by the transfer fork 23 of the wafer transfer device 22, and is transferred to the alignment unit 50 of the processing station 3.
  • the horizontal orientation of the wafer W is adjusted by adjusting the position of the notch portion (not shown) formed in the wafer W.
  • the wafer W whose horizontal orientation is adjusted is then conveyed from the alignment unit 50 by the transfer unit 30 and delivered to the chuck 42 at the delivery position A0. Subsequently, the rotary table 41 is rotated to sequentially move the chuck 42 to the processing positions A1 to A3, and various grinding processes (coarse grinding, medium grinding, and finish grinding) are performed on the back surface of the wafer W. Further, in various grinding processes in the grinding unit 40, in order to grind the wafer W to a desired thickness as described above, the thickness of the wafer W is determined by using the thickness measuring unit (contact type measuring mechanism 110 and non-contact measuring mechanism 120). It is done while measuring.
  • the thickness measuring unit contact type measuring mechanism 110 and non-contact measuring mechanism 120
  • the rough grinding portion is in a state where the probe 114 of the height gauge 111 of the contact type measuring mechanism 110 is in contact with the front surface of the chuck 42 and the probe 115 of the height gauge 112 is in contact with the back surface Wb of the wafer W.
  • the back surface Wb of the wafer W is roughly ground using 80.
  • the contact measuring mechanism 120 when measuring the thickness of the wafer W, the back surface Wb of the wafer W is not damaged, and the thickness of the wafer W itself excluding the thickness of the device D and the protective tape T can be measured. It is preferable to use the contact measuring mechanism 120.
  • the non-contact measuring mechanism 120 has a narrower thickness measuring range of the wafer W than the contact measuring mechanism 110, and cannot measure the thickness of the wafer W immediately after being carried into the grinding unit 40. Therefore, in the rough grinding process at the processing position A1, the thickness of the wafer W is reduced to a thickness (for example, 5 to 300 ⁇ m) at which the thickness can be measured by, for example, the non-contact measuring mechanism 120.
  • the rotary table 41 is rotated to move the chuck 42 (wafer W) to the processing position A2.
  • the back surface Wb of the wafer W is medium-ground using the middle grinding unit 90 while measuring the thickness of the wafer W using the contact type measuring mechanism 110, and then the thickness is measured during the middle grinding.
  • the unit is switched from the contact type measuring mechanism 110 to the non-contact measuring mechanism 120.
  • the non-contact measuring mechanism 120 it is preferable to use the non-contact measuring mechanism 120 for measuring the thickness of the wafer W, but when the non-contact measuring mechanism 120 is used in a state where the roughness of the back surface Wb immediately after rough grinding is large, the back surface Wb is used. There is a possibility that stable measurement results cannot be obtained due to variations in the reflected light from.
  • the thickness of the wafer W is measured by the contact type measuring mechanism 110 and the determination of whether or not the thickness can be measured by the non-contact measuring mechanism 120 (hereinafter, the non-contact measuring mechanism 120). "Measurable judgment" is performed in parallel. Then, when it is determined that the roughness of the back surface Wb after rough grinding is improved (pre-grinding process) by the progress of the middle grinding process and the thickness measurement by the non-contact measuring mechanism 120 can be appropriately performed, the non-contact measuring mechanism 120 determines. The thickness measurement is started, and then the thickness measurement by the contact type measuring mechanism 110 is completed.
  • FIG. 7A the same method as the rough grinding process at the machining position A1, that is, the contact type measuring mechanism 110 is used. While measuring the thickness, the back surface Wb of the wafer W is medium-ground (process P1 in FIG. 8).
  • FIG. 8A shows an example of the thickness measurement result of the wafer W in each of the contact type measurement mechanism 110 and the non-contact measurement mechanism 120 at the processing position A2.
  • FIG. 8B shows the details of an example of the measurement result of the non-contact measurement mechanism 120 in FIG. 8A.
  • the thickness of the wafer W is reduced to a desired thickness for improving the roughness of the back surface Wb, then, as shown in FIG. 7 (b), the thickness by the medium grinding of the back surface Wb and the contact type measuring mechanism 110. While continuing the measurement, the measurable determination of the non-contact measuring mechanism 120 is started (process P2 in FIG. 8).
  • the measurable determination of the non-contact measurement mechanism 120 uses the pulse data of the body thickness of the wafer W calculated based on the reflected light from the front surface Wa and the back surface Wb of the wafer W of the light emitted from the sensor 121. Will be done. Specifically, for example, as shown in FIG.
  • the measurable determination of the non-contact measuring mechanism 120 is performed.
  • the reflected light (measured thickness data) of the non-contact measurement mechanism 120 varies as described above, and a stable measurable determination can be made.
  • the measured thickness data varies, and the measured thickness data happens to fall within the threshold value, so that accurate thickness measurement becomes possible at a timing when accurate thickness measurement by the non-contact measurement mechanism 120 cannot be performed.
  • by improving the roughness of the back surface Wb in this way and performing the measurable determination after the variation in the measured thickness data becomes small the risk of erroneous determination in this measurable determination can be reduced. Can be done.
  • the risk of erroneous determination in such a measurable determination can be reduced. Further, it can be appropriately reduced.
  • the threshold value used for the determination for example, the grinding amount of the wafer W per measurement cycle by the non-contact measuring mechanism 120 due to the descending speed of the grinding wheel of the middle grinding unit 90 can be used.
  • the threshold value used may be, for example, the grinding amount of the wafer W per measurement cycle of ⁇ 1 ⁇ m.
  • the data used as the threshold value is not limited to this "grinding amount per measurement cycle", and any data can be used as the threshold value, and the data value used as the threshold value is naturally set to any value. be able to.
  • the measurable determination may be made by comparing the thickness measurement value by the non-contact measurement mechanism 120 with the thickness measurement value by the contact type measurement mechanism 110.
  • the measurement result of the thickness of the wafer W by the contact type measuring mechanism 110 may be used as a threshold value.
  • the number of consecutive times in which the difference value is within the threshold value for determining that the measurement by the non-contact measurement mechanism 120 is possible is not particularly limited, and can be determined to be any number of times of two or more. .. However, from the viewpoint of reducing the risk of erroneous determination in the above-mentioned measurable determination, it is preferable that the number of consecutive times is large.
  • the measurable determination process is terminated and the thickness data calculated by the non-contact measurement mechanism 120 is used as the thickness of the wafer W. Then, when the thickness measurement by the non-contact measurement mechanism 120 is started, the thickness measurement of the wafer W by the contact type measurement mechanism 110 is stopped by separating and contacting the probes 114 and 115 as shown in FIG. 7 (c). (Process P3 in FIG. 8), whereby the thickness measuring unit at the machining position A2 is switched from the contact measuring mechanism 110 to the non-contact measuring mechanism 120.
  • the thickness measuring unit is switched.
  • the middle grinding process of the wafer W is continued without performing the above.
  • an error may be issued immediately after the completion of the medium grinding process of the wafer W, or the grinding process may be continued using the contact type measuring mechanism 110. good.
  • the thickness measuring unit is switched from the contact measuring mechanism 110 to the non-contact measuring mechanism 120, the medium grinding process at the machining position A2 is further continued. Then, when the wafer W is medium-ground to the target thickness, it is detected as an end point, and the grinding feed and grinding of the medium-grinding unit 90 are completed. After that, the rotary table 41 is rotated to move the chuck 42 (wafer W) to the processing position A3.
  • the back surface Wb of the wafer W is finish-ground using the finish grinding unit 100 while measuring the thickness of the main body of the wafer W by the non-contact measurement mechanism 120 as shown in FIG.
  • the thickness of the wafer W is sufficiently reduced in the rough grinding portion 80 and the middle grinding portion 90, and the roughness of the back surface Wb is improved. Therefore, the thickness is appropriately measured by the non-contact measuring mechanism 120. be able to.
  • the rotary table 41 is rotated to move the chuck 42 to the delivery position A0.
  • the thickness of the main body of a plurality of points including the vicinity of the central portion and the vicinity of the peripheral portion of the wafer W is measured by the non-contact measurement mechanism 120 while rotating the wafer W, whereby the flatness of the wafer W (TTV: Total Tickness Variation) is calculated.
  • the wafer W is conveyed from the delivery position A0 to the second cleaning unit 70 by the transfer unit 30, and the surface Wa of the wafer W is cleaned while being held by the transfer pad 32.
  • the wafer W is transported from the second cleaning unit 70 to the first cleaning unit 60 by the transport unit 30, and the front surface Wa and the back surface Wb of the wafer W are cleaned using a cleaning liquid nozzle (not shown). ..
  • the wafer W to which all the processing has been performed is transferred to the cassette C of the cassette mounting table 10 by the transfer fork 23 of the wafer transfer device 22. In this way, a series of wafer processing in the processing apparatus 1 is completed.
  • the thickness of the wafer W of the data calculated by the non-contact measurement mechanism 120 is switched from the contact type measuring mechanism 110 to the non-contact measuring mechanism 120. Therefore, the thickness measurement of the wafer W can be stably continued when the thickness measuring unit is switched.
  • the non-contact measurement mechanism 120 accurately collects the difference values. It is determined that various thickness measurements have become possible. In this way, whether or not accurate thickness measurement by the non-contact measurement mechanism 120 is possible is performed after the difference value of the body thickness data is continuously set within the threshold value a plurality of times, so that the measurement data varies. It is possible to reduce the risk of erroneous judgment of measurable judgment due to the above. That is, the operation can be appropriately switched from the contact type measuring mechanism 110 to the non-contact measuring mechanism 120 after it is determined that the body thickness measured by the non-contact measuring mechanism 120 is reliable data as a measurement result. ..
  • the measurable determination is started after the roughness of the back surface Wb is improved by the middle grinding of the wafer W.
  • the risk of erroneous determination in the measurable determination of the non-contact measurement mechanism 120 can be reduced, that is, the operation of the contact type measurement mechanism 110 can be switched to the non-contact measurement mechanism 120 more appropriately.
  • the above switching operation of the thickness measuring unit can be automated based on the measured pulse data without the intervention of the operation by the operator. As a result, it is possible to suppress the occurrence of defects due to the operation of the operator, and it is possible to appropriately improve the throughput required for the grinding process in the processing apparatus 1.
  • the thickness measurement of the wafer W for determining the measurable property of the non-contact measurement mechanism 120 is started, but the thickness measurement of the wafer W is performed. It may be started at the same time as the medium grinding process. Further, the measurable determination may be started at the same time as the middle grinding process. Even in such a case, the thickness measurement of the wafer W by the non-contact measurement mechanism 120 is started after the difference value of the main body thickness data acquired by the non-contact measurement mechanism 120 is continuously set within the threshold value a plurality of times. Therefore, the thickness measuring unit can be appropriately switched.
  • the thickness of the wafer W is reduced to the thickness measurement range (for example, 5 to 300 ⁇ m) of the non-contact measuring mechanism 120 by the rough grinding portion 80 at the machining position A1, and then the wafer W is moved to the machining position A2. I moved it.
  • the thickness of the wafer W put into the processing position A2 is not limited to this, and the wafer W is moved to the processing position A2 with a thickness larger than the thickness measurement range of the non-contact measurement mechanism 120 (for example, more than 300 ⁇ m). You may put it in.
  • the thickness of the wafer W is reduced to the thickness measurement range of the non-contact measurement mechanism 120 (pre-grinding process) by the middle grinding portion 90 at the processing position A2, and then the measurable determination of the non-contact measurement mechanism 120 is started.
  • the grinding unit 40 has a three-axis configuration (rough grinding unit 80, medium grinding unit 90, finish grinding unit 100) has been described as an example, but in the grinding process, the thickness measuring unit
  • the configuration of the grinding unit 40 is not limited to this as long as it requires a switching operation.
  • the grinding portion may have a biaxial configuration in which only the rough grinding portion 80 (or the medium grinding portion 90) and the finish grinding portion 100 are provided, or a uniaxial configuration in which only one grinding portion is provided. You may.
  • the modified layer M is formed by irradiating the inside of the wafer W with a laser beam (for example, a YAG laser) as shown in FIG. 10 (a), and the modification is performed as shown in FIG. 10 (b). Even when the wafer W is separated and thinned with the layer M as a base point, the technique according to the present disclosure can be applied.
  • a laser beam for example, a YAG laser
  • the separation surface of the wafer W has a large roughness due to the influence of the remaining modified layer M (damage layer), and the thickness by the non-contact measurement mechanism 120. It may not be possible to make accurate measurements. Therefore, as shown in FIG. 10 (c), in the grinding process for removing the damaged layer, first, the non-contact measuring mechanism 120 is determined to be measurable while measuring the thickness by the contact measuring mechanism 110, and then separated. After the surface roughness is improved (after the damaged layer is removed), the non-contact measurement mechanism 120 is switched to.
  • the measurable determination is made based on the pulse data calculated based on the reflected light from the wafer W of the light.
  • the data used for the measurable determination is not limited to the pulse data, and the measurable determination may be made based on the continuous data calculated by the reflected light of the continuous light, for example.
  • the measurable determination is based on the calculated body thickness data instead of using whether or not the difference value of the body thickness data is continuously within the threshold value as in the above embodiment. Whether or not it continues to be within the threshold value at a desired time can be used for determination.
  • the wafer W as the substrate is a single wafer having the device D and the protective tape T on the surface Wa as shown in FIG. 1 has been described as an example, but the wafer W has been described.
  • the configuration is also not limited to the above embodiment. Specifically, in a polymerized wafer in which a first wafer having a device formed on its surface and a second wafer are joined to each other, even when the first wafer is thinned, the technique according to the present disclosure. Can be applied.
  • Processing equipment 40 Grinding part 110 Contact type measuring mechanism 120 Non-contact measuring mechanism 130 Control part W Wafer Wb Back side

Abstract

This substrate processing system for processing a substrate, comprises: a grinding unit for grinding a processing surface of the substrate; a thickness measurement unit for measuring a thickness of the substrate; and a control unit for controlling operation of the thickness measurement unit. The thickness measurement unit comprises: a contact measurement mechanism for contacting the processing surface of the substrate to measure the thickness of the substrate; and a contact-less measurement mechanism for measuring the thickness of the substrate without contacting the substrate. The control unit concurrently performs, in grinding processing of the substrate by the grinding unit, control of thickness measurement operation of the substrate by the contact measurement mechanism and control of measurement availability determination operation for the non-contact measurement mechanism. In the control of the measurement availability determination operation, the control unit performs control to temporally and sequentially calculate a difference value between one thickness measurement value acquired by the contact-less measurement mechanism and another thickness measurement value acquired immediately before the one thickness measurement value, determine that the thickness of the substrate can be measured when the calculated difference value continuously falls within a predetermined threshold, and start the thickness measurement operation by the contact-less measurement mechanism.

Description

基板処理システム及び基板処理方法Board processing system and board processing method
　本開示は、基板処理システム及び基板処理方法に関する。 This disclosure relates to a substrate processing system and a substrate processing method.
　特許文献１には、ウェハの厚み測定方法であって、研削加工中または研削加工後に、ウェハをチャックにバキューム吸着した状態で、ウェハの表面とチャックの表面のそれぞれに２点式インプロセスゲージの一対の接触子を当て、測定された高さの差をウェハの厚みとして計測することが開示されている。 Patent Document 1 describes a method for measuring a thickness of a wafer, in which a two-point in-process gauge is provided on the surface of the wafer and the surface of the chuck in a state where the wafer is vacuum-adsorbed to the chuck during or after the grinding process. It is disclosed that a pair of contacts are applied and the difference in measured heights is measured as the thickness of the wafer.
　また特許文献２には、加工装置において基板の一の面を保持手段に保持し、前記基板の他の面に向けて、該他の面と略直交する方向にレーザ光を照射し、該レーザ光の一の面からの反射光と他の面からの反射光との干渉波を受光して、該干渉波の波形に基づいて基板の厚みを導出する方法が開示されている。 Further, in Patent Document 2, one surface of the substrate is held by the holding means in the processing apparatus, and laser light is irradiated toward the other surface of the substrate in a direction substantially orthogonal to the other surface, and the laser is used. A method of receiving an interference wave of light reflected from one surface of light and light reflected from another surface and deriving the thickness of a substrate based on the waveform of the interference wave is disclosed.
日本国特開２００１－９７１６号公報Japanese Patent Application Laid-Open No. 2001-9716 日本国特開２００９－５０９４４号公報Japanese Patent Application Laid-Open No. 2009-50944
　本開示にかかる技術は、研削加工中における基板の厚み測定において、接触式厚み測定機構による厚み測定から、非接触式厚み測定機構による厚み測定への切り替えを適切に行う。 The technology according to the present disclosure appropriately switches from the thickness measurement by the contact type thickness measurement mechanism to the thickness measurement by the non-contact type thickness measurement mechanism in the thickness measurement of the substrate during the grinding process.
　本開示の一態様は、基板を処理する基板処理システムであって、前記基板の加工面を研削する研削部と、前記基板の厚みを測定する厚み測定部と、前記厚み測定部の動作を制御する制御部と、を有し、前記厚み測定部は、前記基板の前記加工面と接触して当該基板の厚みを測定する接触式測定機構と、前記基板とは非接触で当該基板の厚みを測定する非接触測定機構と、を備え、前記制御部は、前記研削部による前記基板の研削処理に際して、前記接触式測定機構による前記基板の厚み測定動作の制御を行うことと、前記非接触測定機構による測定可能判定動作の制御を行うことと、を並行して行い、前記測定可能判定動作の制御においては、前記非接触測定機構により取得される一の厚み測定値と、当該一の厚み測定値の直前に取得された他の厚み測定値と、の差分値を経時的に連続して算出し、算出された前記差分値が、予め定められた閾値内に連続して収まった場合に前記基板の厚み測定が可能であると判定して、前記非接触測定機構による前記基板の厚み測定動作を開始させる制御を行う。 One aspect of the present disclosure is a substrate processing system for processing a substrate, which controls the operation of a grinding unit for grinding the machined surface of the substrate, a thickness measuring unit for measuring the thickness of the substrate, and the thickness measuring unit. The thickness measuring unit has a contact-type measuring mechanism that contacts the machined surface of the substrate to measure the thickness of the substrate, and the thickness measuring unit measures the thickness of the substrate without contacting the substrate. The control unit includes a non-contact measurement mechanism for measuring, and the control unit controls the thickness measurement operation of the substrate by the contact type measurement mechanism when the substrate is ground by the grinding unit, and the non-contact measurement. Controlling the measurable determination operation by the mechanism is performed in parallel, and in the control of the measurable determination operation, one thickness measurement value acquired by the non-contact measurement mechanism and the one thickness measurement are performed. The difference value from other thickness measurement values acquired immediately before the value is continuously calculated over time, and the calculated difference value is continuously within a predetermined threshold value. It is determined that the thickness of the substrate can be measured, and the non-contact measurement mechanism controls to start the thickness measurement operation of the substrate.
　本開示によれば、研削加工中における基板の厚み測定において、接触式厚み測定機構による厚み測定から、非接触式厚み測定機構による厚み測定への切り替えを適切に行うことができる。 According to the present disclosure, in the thickness measurement of the substrate during the grinding process, it is possible to appropriately switch from the thickness measurement by the contact type thickness measurement mechanism to the thickness measurement by the non-contact type thickness measurement mechanism.
加工される基板の構成の概略を示す側面図である。It is a side view which shows the outline of the structure of the substrate to be processed. 加工装置の構成の概略を示す平面図である。It is a top view which shows the outline of the structure of the processing apparatus. 各研削部及びチャックの構成の一例を示す側面図である。It is a side view which shows an example of the structure of each grinding part and a chuck. 接触式測定機構の構成の概略を示す側面図である。It is a side view which shows the outline of the structure of the contact type measurement mechanism. 非接触測定機構の構成の概略を示す側面図である。It is a side view which shows the outline of the structure of the non-contact measurement mechanism. 接触式測定機構による厚みの測定の様子を示す説明図である。It is explanatory drawing which shows the state of the thickness measurement by the contact type measurement mechanism. 厚み測定部の切り替えの様子を示す説明図である。It is explanatory drawing which shows the state of switching of the thickness measuring part. 厚み測定部の切り替えの様子を示す説明図である。It is explanatory drawing which shows the state of switching of the thickness measuring part. 非接触測定機構による厚みの測定の様子を示す説明図である。It is explanatory drawing which shows the state of the thickness measurement by the non-contact measurement mechanism. 他の基板処理方法の一例を示す説明図である。It is explanatory drawing which shows an example of another substrate processing method.
　近年、半導体デバイスの製造工程においては、表面に複数の電子回路等のデバイスが形成された半導体基板（以下、単に「ウェハ」という。）に対し、当該ウェハの裏面を研削して、ウェハを薄化することが行われている。ウェハの裏面の研削は、例えば基板保持手段でウェハの表面を保持した状態で当該基板保持手段を回転させながら、ウェハの裏面に研削手段の研削砥石を当接させることにより行われる。 In recent years, in a semiconductor device manufacturing process, a semiconductor substrate (hereinafter, simply referred to as a "wafer") in which a plurality of devices such as electronic circuits are formed on the front surface is ground on the back surface of the wafer to make the wafer thinner. Is being done. Grinding of the back surface of the wafer is performed, for example, by bringing the grinding wheel of the grinding means into contact with the back surface of the wafer while rotating the substrate holding means while holding the front surface of the wafer by the substrate holding means.
　このウェハの研削処理は、製品としてのウェハを目標の厚みに適切に加工するため、当該ウェハの厚みを測定しながら行われる。上述の特許文献１には、研削処理中のウェハの厚みを、２点式インプロセスゲージの接触子の一方をチャック表面、他方をウェハ上面（研削面である裏面）に接触させることでウェハの高さを測定する、接触式の厚み測定手段が開示されている。 This wafer grinding process is performed while measuring the thickness of the wafer in order to appropriately process the wafer as a product to the target thickness. In the above-mentioned Patent Document 1, the thickness of the wafer being ground is adjusted by contacting one of the contacts of the two-point in-process gauge with the chuck surface and the other with the upper surface of the wafer (the back surface which is the grinding surface). A contact-type thickness measuring means for measuring height is disclosed.
　しかしながら、特許文献１に開示されるような接触式の厚み測定手段を用いる場合、ウェハに接触する接触子によってウェハの裏面に損傷を与えるおそれがある。また接触式の厚み測定手段を用いる場合、ウェハの表面に形成されたデバイスを保護するための保護テープの厚みを考慮してウェハの厚みを測定することができず、すなわち、ウェハ自体の厚みを適切に測定することができない。このため従来、特許文献２に開示されるように、ウェハに接触子を接触させることなく、レーザ光の干渉波を用いてウェハ自体の厚みを測定することができる、非接触式の厚み測定手段を用いることが提案されている。 However, when a contact-type thickness measuring means as disclosed in Patent Document 1 is used, there is a risk that the contact element in contact with the wafer may damage the back surface of the wafer. Further, when the contact type thickness measuring means is used, the thickness of the wafer cannot be measured in consideration of the thickness of the protective tape for protecting the device formed on the surface of the wafer, that is, the thickness of the wafer itself is measured. Cannot be measured properly. Therefore, conventionally, as disclosed in Patent Document 2, a non-contact type thickness measuring means capable of measuring the thickness of the wafer itself by using the interference wave of the laser beam without contacting the wafer with the contactor. It has been proposed to use.
　しかしながら、このような非接触式の厚み測定手段には、測定することができるウェハの厚みに制限（検知範囲：例えば５～３００μｍ）があり、ウェハの厚みがこの検知範囲から逸脱している場合には、接触式の厚み測定手段を併用する必要がある。そして、このように接触式と非接触式の厚み測定手段を併用する場合、ウェハの研削処理中に接触式から非接触式への厚み測定手段の切り替えが行われるが、この厚み測定手段の切り替えに際して、ウェハの厚みを安定して測定できないおそれがあった。具体的には、非接触式の厚み測定手段により安定してウェハの厚みを正確に測定できない段階、例えばレーザ光の入射面であるウェハの裏面が荒れている段階で、厚み測定手段を接触式から非接触式に切り替えた場合、ウェハの厚みを正確に測定できないおそれがあった。 However, such a non-contact type thickness measuring means has a limitation on the thickness of the wafer that can be measured (detection range: for example, 5 to 300 μm), and the thickness of the wafer deviates from this detection range. It is necessary to use a contact type thickness measuring means together with the above. When the contact type and non-contact type thickness measuring means are used in combination in this way, the thickness measuring means is switched from the contact type to the non-contact type during the grinding process of the wafer. At that time, there was a possibility that the thickness of the wafer could not be measured stably. Specifically, the thickness measuring means is a contact type at a stage where the thickness of the wafer cannot be stably and accurately measured by the non-contact type thickness measuring means, for example, when the back surface of the wafer, which is the incident surface of the laser beam, is roughened. When switching from to non-contact type, there was a risk that the thickness of the wafer could not be measured accurately.
　本開示にかかる技術は、上記事情に鑑みてなされたものであり、研削加工中における基板の厚み測定において、接触式厚み測定機構による厚み測定から、非接触式厚み測定機構による厚み測定への切り替えを適切に行う。以下、本実施形態にかかるウェハ処理システムとしての加工装置、及びウェハ処理方法について、図面を参照しながら説明する。なお、本明細書及び図面において、実質的に同一の機能構成を有する要素においては、同一の符号を付することにより重複説明を省略する。 The technique according to the present disclosure has been made in view of the above circumstances, and in the thickness measurement of the substrate during the grinding process, the thickness measurement by the contact type thickness measurement mechanism is switched to the thickness measurement by the non-contact type thickness measurement mechanism. Appropriately. Hereinafter, the processing apparatus as the wafer processing system and the wafer processing method according to the present embodiment will be described with reference to the drawings. In the present specification and the drawings, the elements having substantially the same functional configuration are designated by the same reference numerals, so that duplicate description will be omitted.
　本実施形態にかかる加工装置１では、基板としてのウェハＷの薄化が行われる。ウェハＷは、例えばシリコンウェハや化合物半導体ウェハなどの半導体ウェハであり、図１に示すように表面ＷａにはデバイスＤが形成され、更に当該デバイスＤを保護するための保護テープＴが接着されている。そして加工装置１においてはウェハＷの裏面Ｗｂに対して研削などの処理が行われ、これにより当該ウェハＷが薄化される。 In the processing apparatus 1 according to the present embodiment, the wafer W as a substrate is thinned. The wafer W is a semiconductor wafer such as a silicon wafer or a compound semiconductor wafer. As shown in FIG. 1, a device D is formed on the surface Wa, and a protective tape T for protecting the device D is adhered to the surface Wa. There is. Then, in the processing apparatus 1, processing such as grinding is performed on the back surface Wb of the wafer W, whereby the wafer W is thinned.
　図２に示すように加工装置１は、搬入出ステーション２と処理ステーション３を一体に接続した構成を有している。搬入出ステーション２では、例えば外部との間で複数のウェハＷを収容可能なカセットＣが搬入出される。処理ステーション３は、ウェハＷに対して所望の処理を施す各種処理装置を備えている。 As shown in FIG. 2, the processing apparatus 1 has a configuration in which the loading / unloading station 2 and the processing station 3 are integrally connected. At the loading / unloading station 2, for example, a cassette C capable of accommodating a plurality of wafers W is loaded / unloaded from the outside. The processing station 3 includes various processing devices that perform desired processing on the wafer W.
　搬入出ステーション２には、カセット載置台１０が設けられている。また、カセット載置台１０のＹ軸正方向側には、当該カセット載置台１０に隣接してウェハ搬送領域２０が設けられている。ウェハ搬送領域２０には、Ｘ軸方向に延伸する搬送路２１上を移動自在に構成されたウェハ搬送装置２２が設けられている。 The loading / unloading station 2 is provided with a cassette mounting table 10. Further, on the Y-axis positive direction side of the cassette mounting table 10, a wafer transfer area 20 is provided adjacent to the cassette mounting table 10. The wafer transfer region 20 is provided with a wafer transfer device 22 configured to be movable on a transfer path 21 extending in the X-axis direction.
　ウェハ搬送装置２２は、ウェハＷを保持して搬送する搬送フォーク２３を有している。搬送フォーク２３は、水平方向、鉛直方向、水平軸回り及び鉛直軸周りに移動自在に構成されている。そして、ウェハ搬送装置２２は、カセット載置台１０のカセットＣ、アライメント部５０、及び第１の洗浄部６０に対して、ウェハＷを搬送可能に構成されている。 The wafer transfer device 22 has a transfer fork 23 that holds and conveys the wafer W. The transport fork 23 is configured to be movable in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis. The wafer transfer device 22 is configured to be able to transfer the wafer W to the cassette C of the cassette mounting table 10, the alignment unit 50, and the first cleaning unit 60.
　処理ステーション３では、ウェハＷに対して研削や洗浄などの加工処理が行われる。処理ステーション３は、ウェハＷの搬送を行う搬送部３０、ウェハＷの研削処理を行う研削部４０、研削処理前のウェハＷの水平方向の向きを調節するアライメント部５０、研削処理後のウェハＷの裏面Ｗｂを洗浄する第１の洗浄部６０、及び、研削処理後のウェハＷの表面Ｗａを洗浄する第２の洗浄部７０を有している。 At the processing station 3, processing processing such as grinding and cleaning is performed on the wafer W. The processing station 3 includes a transport unit 30 that transports the wafer W, a grinding unit 40 that grinds the wafer W, an alignment unit 50 that adjusts the horizontal orientation of the wafer W before the grinding process, and a wafer W after the grinding process. It has a first cleaning unit 60 for cleaning the back surface Wb of the wafer W, and a second cleaning unit 70 for cleaning the front surface Wa of the wafer W after the polishing process.
　搬送部３０は、複数、例えば３つのアーム３１を備えた多関節型のロボットである。３つのアーム３１は、それぞれが旋回自在に構成されている。先端のアーム３１には、ウェハＷを吸着保持する搬送パッド３２が取り付けられている。また、基端のアーム３１は、アーム３１を鉛直方向に昇降させる昇降機構３３に取り付けられている。そして、搬送部３０は、研削部４０の受渡位置Ａ０、アライメント部５０、第１の洗浄部６０、及び第２の洗浄部７０に対して、ウェハＷを搬送可能に構成されている。 The transport unit 30 is an articulated robot equipped with a plurality of, for example, three arms 31. Each of the three arms 31 is configured to be rotatable. A transport pad 32 that attracts and holds the wafer W is attached to the arm 31 at the tip. Further, the arm 31 at the base end is attached to an elevating mechanism 33 that elevates and elevates the arm 31 in the vertical direction. The transfer unit 30 is configured to be able to transfer the wafer W to the delivery position A0 of the grinding unit 40, the alignment unit 50, the first cleaning unit 60, and the second cleaning unit 70.
　研削部４０には回転テーブル４１が設けられている。回転テーブル４１上には、ウェハＷを吸着保持するチャック４２が４つ設けられている。チャック４２には例えばポーラスチャックが用いられ、ウェハＷの表面Ｗａ（保護テープＴ）を吸着保持する。チャック４２の表面、すなわちウェハＷの保持面は、側面視において中央部が端部に比べて突出した凸形状を有している。なおこの中央部の突出は微小であるが、以下の説明の図示においては、説明の明瞭化のためチャック４２の中央部の突出を大きく図示する場合がある。 The grinding unit 40 is provided with a rotary table 41. Four chucks 42 for sucking and holding the wafer W are provided on the rotary table 41. For example, a porous chuck is used for the chuck 42 to adsorb and hold the surface Wa (protective tape T) of the wafer W. The surface of the chuck 42, that is, the holding surface of the wafer W, has a convex shape in which the central portion protrudes from the end portion in the side view. Although the protrusion of the central portion is minute, in the illustration of the following description, the protrusion of the central portion of the chuck 42 may be shown large for the sake of clarity of the explanation.
　図３に示すように、チャック４２はチャックベース４３に保持されている。チャックベース４３には、各研削部（粗研削部８０、中研削部９０及び仕上研削部１００）とチャック４２の相対的な傾きを調整する傾き調整機構４４が設けられている。傾き調整機構４４はチャック４２及びチャックベース４３を傾斜させることができ、これにより、加工位置Ａ１～Ａ３の各種研削部とチャック４２上面との相対的な傾きを調整できる。なお、傾き調整機構４４の構成は特に限定されるものではなく、研削砥石に対するチャック４２の相対的な角度（平行度）を調整することができれば、任意に選択できる。 As shown in FIG. 3, the chuck 42 is held by the chuck base 43. The chuck base 43 is provided with an inclination adjusting mechanism 44 for adjusting the relative inclination of each grinding portion (rough grinding portion 80, middle grinding portion 90, and finish grinding portion 100) and the chuck 42. The tilt adjusting mechanism 44 can tilt the chuck 42 and the chuck base 43, whereby the relative tilt between the various grinding portions at the machining positions A1 to A3 and the upper surface of the chuck 42 can be adjusted. The configuration of the inclination adjusting mechanism 44 is not particularly limited, and can be arbitrarily selected as long as the relative angle (parallelism) of the chuck 42 with respect to the grinding wheel can be adjusted.
　４つのチャック４２は、回転テーブル４１が回転することにより、受渡位置Ａ０及び加工位置Ａ１～Ａ３に移動可能になっている。また、４つのチャック４２はそれぞれ、回転機構（図示せず）によって鉛直軸回りに回転可能に構成されている。 The four chucks 42 can be moved to the delivery position A0 and the processing positions A1 to A3 by rotating the rotary table 41. Further, each of the four chucks 42 is configured to be rotatable around a vertical axis by a rotation mechanism (not shown).
　受渡位置Ａ０では、搬送部３０によるウェハＷの受け渡しが行われる。加工位置Ａ１には粗研削部８０が配置され、ウェハＷを粗研削する。加工位置Ａ２には中研削部９０が配置され、ウェハＷを中研削する。加工位置Ａ３には仕上研削部１００が配置され、ウェハＷを仕上研削する。 At the delivery position A0, the wafer W is delivered by the transport unit 30. A rough grinding portion 80 is arranged at the processing position A1 to roughly grind the wafer W. A medium grinding unit 90 is arranged at the processing position A2, and the wafer W is medium-grinded. A finish grinding unit 100 is arranged at the processing position A3 to finish grind the wafer W.
　粗研削部８０は、下面に環状の粗研削砥石を備える粗研削ホイール８１、当該粗研削ホイール８１を支持するマウント８２、当該マウント８２を介して粗研削ホイール８１を回転させるスピンドル８３、及び、例えばモータ（図示せず）を内蔵する駆動部８４を有している。また粗研削部８０は、図２に示す支柱８５に沿って鉛直方向に移動可能に構成されている。 The rough grinding unit 80 includes a rough grinding wheel 81 having an annular rough grinding wheel on the lower surface, a mount 82 for supporting the rough grinding wheel 81, a spindle 83 for rotating the rough grinding wheel 81 via the mount 82, and, for example. It has a drive unit 84 containing a motor (not shown). Further, the rough grinding portion 80 is configured to be movable in the vertical direction along the support column 85 shown in FIG.
　中研削部９０は粗研削部８０と同様の構成を有している。すなわち中研削部９０は、環状の中研削砥石を備える中研削ホイール９１、マウント９２、スピンドル９３、駆動部９４、及び支柱９５を有している。中研削砥石の砥粒の粒度は、粗研削砥石の砥粒の粒度より小さい。 The medium grinding unit 90 has the same configuration as the rough grinding unit 80. That is, the medium-grinding unit 90 has a medium-grinding wheel 91, a mount 92, a spindle 93, a drive unit 94, and a support column 95 including an annular medium-grinding grindstone. The grain size of the grindstone of the medium grinding wheel is smaller than the grain size of the grindstone of the coarse grinding wheel.
　仕上研削部１００は粗研削部８０及び中研削部９０と同様の構成を有している。すなわち仕上研削部１００は、環状の仕上研削砥石を備える仕上研削ホイール１０１、マウント１０２、スピンドル１０３、駆動部１０４、及び支柱１０５を有している。仕上研削砥石の砥粒の粒度は、中研削砥石の砥粒の粒度より小さい。 The finish grinding unit 100 has the same configuration as the rough grinding unit 80 and the medium grinding unit 90. That is, the finish grinding unit 100 has a finish grinding wheel 101 including an annular finish grinding wheel, a mount 102, a spindle 103, a drive unit 104, and a support column 105. The grain size of the grindstone of the finish grinding wheel is smaller than the grain size of the grindstone of the medium grinding wheel.
　また研削部４０の受渡位置Ａ０、及び加工位置Ａ１～Ａ３には、研削処理中のウェハＷの厚みを測定するための厚み測定部が設けられている。具体的には、図２に示すように、加工位置Ａ１、Ａ２には接触式の厚み測定機構（以下、「接触式測定機構１１０」という。）が設けられ、受渡位置Ａ０及び加工位置Ａ２、Ａ３には非接触式の厚み測定機構（以下、「非接触測定機構１２０」という。）がそれぞれ設けられている。 Further, at the delivery position A0 of the grinding unit 40 and the processing positions A1 to A3, a thickness measuring unit for measuring the thickness of the wafer W during the grinding process is provided. Specifically, as shown in FIG. 2, the processing positions A1 and A2 are provided with a contact-type thickness measuring mechanism (hereinafter referred to as "contact-type measuring mechanism 110"), and the delivery position A0 and the processing position A2. A3 is provided with a non-contact type thickness measuring mechanism (hereinafter referred to as "non-contact measuring mechanism 120").
　接触式測定機構１１０は、図４に示すようにチャック側のハイトゲージ１１１、ウェハ側のハイトゲージ１１２、及び算出部１１３を有している。ハイトゲージ１１１はプローブ１１４を備え、プローブ１１４の先端がチャック４２の表面、すなわちウェハＷの保持面に接触することで、当該保持面の高さ位置を測定する。ハイトゲージ１１２はプローブ１１５を備え、プローブ１１５の先端がウェハＷの加工面である裏面Ｗｂに接触し、当該裏面Ｗｂの高さ位置を測定する。算出部１１３は、ハイトゲージ１１２の測定値からハイトゲージ１１１の測定値を差し引くことで、ウェハＷの全体厚みを算出する。なお、ウェハＷの全体厚みとは、ウェハＷの本体厚みに、デバイスＤの厚み、及び保護テープＴの厚みを足したものである。なお、接触式測定機構１１０によるウェハＷの厚み測定範囲は、例えば０～２０００μｍである。 As shown in FIG. 4, the contact type measuring mechanism 110 has a height gauge 111 on the chuck side, a height gauge 112 on the wafer side, and a calculation unit 113. The height gauge 111 includes a probe 114, and the tip of the probe 114 comes into contact with the surface of the chuck 42, that is, the holding surface of the wafer W, thereby measuring the height position of the holding surface. The height gauge 112 includes a probe 115, and the tip of the probe 115 comes into contact with the back surface Wb, which is the machined surface of the wafer W, to measure the height position of the back surface Wb. The calculation unit 113 calculates the total thickness of the wafer W by subtracting the measured value of the height gauge 111 from the measured value of the height gauge 112. The total thickness of the wafer W is the thickness of the main body of the wafer W, the thickness of the device D, and the thickness of the protective tape T. The thickness measurement range of the wafer W by the contact type measuring mechanism 110 is, for example, 0 to 2000 μm.
　なお、このように接触式測定機構１１０はハイトゲージ１１１、１１２をそれぞれチャック４２の表面、及びウェハＷの裏面Ｗｂに接触させることでウェハＷの全体厚みを算出する。しかしながら、接触式測定機構１１０で算出される厚みデータはこの全体厚みに限られるものではなく、例えば保護テープＴやデバイスＤの厚みが既知である場合には、測定された全体厚みから保護テープＴやデバイスＤの厚みを更に差し引き、ウェハＷの本体厚みを算出してもよい。 In this way, the contact type measuring mechanism 110 calculates the total thickness of the wafer W by contacting the height gauges 111 and 112 with the front surface of the chuck 42 and the back surface Wb of the wafer W, respectively. However, the thickness data calculated by the contact type measuring mechanism 110 is not limited to this total thickness. For example, when the thickness of the protective tape T or the device D is known, the protective tape T is obtained from the measured total thickness. And the thickness of the device D may be further subtracted to calculate the thickness of the main body of the wafer W.
　非接触測定機構１２０は、図５に示すようにセンサ１２１と算出部１２２を有している。センサ１２１には、ウェハＷに接触せずに当該ウェハＷの本体厚みを測定するセンサが用いられ、例えば白色共焦点（コンフォーカル）式の光学系センサが用いられる。センサ１２１は、ウェハＷに対して所定の波長帯域を有する光を照射し、さらにウェハＷの表面Ｗａから反射した反射光と、裏面Ｗｂから反射した反射光とを受光する。算出部１２２は、センサ１２１で受光した両反射光に基づいて、ウェハＷの本体厚みをパルスデータとして算出する。なお、非接触測定機構１２０によるウェハＷの厚み測定範囲は、例えば５～３００μｍである。 The non-contact measurement mechanism 120 has a sensor 121 and a calculation unit 122 as shown in FIG. As the sensor 121, a sensor that measures the thickness of the main body of the wafer W without contacting the wafer W is used, and for example, a white confocal type optical system sensor is used. The sensor 121 irradiates the wafer W with light having a predetermined wavelength band, and further receives the reflected light reflected from the front surface Wa of the wafer W and the reflected light reflected from the back surface Wb. The calculation unit 122 calculates the thickness of the main body of the wafer W as pulse data based on both reflected light received by the sensor 121. The thickness measurement range of the wafer W by the non-contact measurement mechanism 120 is, for example, 5 to 300 μm.
　なお、接触式測定機構１１０及び非接触測定機構１２０の構成は本実施形態には限定されず、任意の構成をとることができる。例えば、本実施形態においては非接触測定機構１２０のセンサ１２１には白色共焦点式の光学系センサが用いられたが、非接触測定機構１２０の構成はこれに限定されず、ウェハＷの本体厚みを非接触で測定するものであれば任意の測定機構を用いることができる。また、センサ１２１は、複数設けられていてもよい。また、センサ１２１から照射される光も特に限定されるものではなく、反射光としてセンサ１２１で受光できれば、パルス光であってもよく、又は連続光であってもよい。 The configuration of the contact type measuring mechanism 110 and the non-contact measuring mechanism 120 is not limited to this embodiment, and any configuration can be adopted. For example, in the present embodiment, a white confocal optical system sensor is used for the sensor 121 of the non-contact measurement mechanism 120, but the configuration of the non-contact measurement mechanism 120 is not limited to this, and the thickness of the main body of the wafer W is not limited to this. Any measuring mechanism can be used as long as it is measured in a non-contact manner. Further, a plurality of sensors 121 may be provided. Further, the light emitted from the sensor 121 is not particularly limited, and may be pulsed light or continuous light as long as it can be received by the sensor 121 as reflected light.
　本実施形態においては、上述のように加工位置Ａ２に厚み測定部として接触式測定機構１１０と非接触測定機構１２０の両方が設けられている。そして該加工位置Ａ２においては、後述するように研削処理中のウェハＷの厚みや加工面（裏面Ｗｂ）の状態に応じて厚み測定部の切り替え、すなわち接触式測定機構１１０から非接触測定機構１２０への切り替えが行われる。厚み測定部の切り替え動作の詳細については後述する。 In the present embodiment, as described above, both the contact type measuring mechanism 110 and the non-contact measuring mechanism 120 are provided as the thickness measuring unit at the processing position A2. Then, at the processing position A2, as will be described later, the thickness measuring unit is switched according to the thickness of the wafer W being ground and the state of the processed surface (back surface Wb), that is, the contact type measuring mechanism 110 to the non-contact measuring mechanism 120. The switch to is made. The details of the switching operation of the thickness measuring unit will be described later.
　以上の加工装置１には制御部１３０が設けられている。制御部１３０は、例えばＣＰＵやメモリ等を備えたコンピュータであり、プログラム格納部（図示せず）を有している。プログラム格納部には、加工装置１におけるウェハＷの加工処理を制御するプログラムが格納されている。またプログラム格納部には、上述の加工位置Ａ２における厚み測定部の切り替え動作を制御するプログラムが更に格納されている。なお、上記プログラムは、コンピュータに読み取り可能な記憶媒体Ｈに記録されていたものであって、当該記憶媒体Ｈから制御部１３０にインストールされたものであってもよい。 The above processing device 1 is provided with a control unit 130. The control unit 130 is, for example, a computer equipped with a CPU, a memory, or the like, and has a program storage unit (not shown). The program storage unit stores a program that controls the processing of the wafer W in the processing apparatus 1. Further, the program storage unit further stores a program for controlling the switching operation of the thickness measuring unit at the above-mentioned processing position A2. The program may be recorded on a storage medium H that can be read by a computer, and may be installed from the storage medium H on the control unit 130.
　次に、以上のように構成された加工装置１を用いて行われるウェハ処理方法について説明する。 Next, a wafer processing method performed using the processing apparatus 1 configured as described above will be described.
　先ず、ウェハＷを複数収納したカセットＣが、搬入出ステーション２のカセット載置台１０に載置される。次に、ウェハ搬送装置２２の搬送フォーク２３によりカセットＣ内からウェハＷが取り出され、処理ステーション３のアライメント部５０に搬送される。アライメント部５０では、ウェハＷに形成されたノッチ部（図示せず）の位置を調節することで、ウェハＷの水平方向の向きが調節される。 First, the cassette C containing a plurality of wafers W is placed on the cassette mounting table 10 of the loading / unloading station 2. Next, the wafer W is taken out from the cassette C by the transfer fork 23 of the wafer transfer device 22, and is transferred to the alignment unit 50 of the processing station 3. In the alignment portion 50, the horizontal orientation of the wafer W is adjusted by adjusting the position of the notch portion (not shown) formed in the wafer W.
　水平方向の向きが調節されたウェハＷは、次に、搬送部３０によりアライメント部５０から搬送され、受渡位置Ａ０のチャック４２に受け渡される。続いて、回転テーブル４１を回転させて、チャック４２を加工位置Ａ１～Ａ３に順次移動させ、ウェハＷの裏面に対して各種研削処理（粗研削、中研削及び仕上研削）を施す。また、研削部４０における各種研削処理は、上述のようにウェハＷを所望の厚みに研削するため、厚み測定部（接触式測定機構１１０及び非接触測定機構１２０）を用いてウェハＷの厚みを測定しながら行われる。 The wafer W whose horizontal orientation is adjusted is then conveyed from the alignment unit 50 by the transfer unit 30 and delivered to the chuck 42 at the delivery position A0. Subsequently, the rotary table 41 is rotated to sequentially move the chuck 42 to the processing positions A1 to A3, and various grinding processes (coarse grinding, medium grinding, and finish grinding) are performed on the back surface of the wafer W. Further, in various grinding processes in the grinding unit 40, in order to grind the wafer W to a desired thickness as described above, the thickness of the wafer W is determined by using the thickness measuring unit (contact type measuring mechanism 110 and non-contact measuring mechanism 120). It is done while measuring.
　研削部４０における各種研削処理、及びウェハＷの厚み測定方法について具体的に説明する。 Various grinding processes in the grinding unit 40 and a method for measuring the thickness of the wafer W will be specifically described.
　加工位置Ａ１では、図６に示すように接触式測定機構１１０のハイトゲージ１１１のプローブ１１４をチャック４２の表面、ハイトゲージ１１２のプローブ１１５をウェハＷの裏面Ｗｂにそれぞれ接触させた状態で、粗研削部８０を用いてウェハＷの裏面Ｗｂを粗研削する。上述したように、ウェハＷの厚みを測定する際には、当該ウェハＷの裏面Ｗｂに損傷を与えず、またデバイスＤや保護テープＴの厚みを除いたウェハＷ自体の厚みを測定可能な非接触測定機構１２０を用いることが好ましい。しかしながら非接触測定機構１２０は、接触式測定機構１１０と比較してウェハＷの厚み測定範囲が狭く、研削部４０に搬入された直後のウェハＷの厚みを測定することができない。そこで加工位置Ａ１における粗研削処理においては、例えば非接触測定機構１２０により厚み測定を行うことができる厚み（例えば５～３００μｍ）まで、ウェハＷの厚みを減少させる。 At the machining position A1, as shown in FIG. 6, the rough grinding portion is in a state where the probe 114 of the height gauge 111 of the contact type measuring mechanism 110 is in contact with the front surface of the chuck 42 and the probe 115 of the height gauge 112 is in contact with the back surface Wb of the wafer W. The back surface Wb of the wafer W is roughly ground using 80. As described above, when measuring the thickness of the wafer W, the back surface Wb of the wafer W is not damaged, and the thickness of the wafer W itself excluding the thickness of the device D and the protective tape T can be measured. It is preferable to use the contact measuring mechanism 120. However, the non-contact measuring mechanism 120 has a narrower thickness measuring range of the wafer W than the contact measuring mechanism 110, and cannot measure the thickness of the wafer W immediately after being carried into the grinding unit 40. Therefore, in the rough grinding process at the processing position A1, the thickness of the wafer W is reduced to a thickness (for example, 5 to 300 μm) at which the thickness can be measured by, for example, the non-contact measuring mechanism 120.
　ウェハＷが所望の厚みまで粗研削されると、回転テーブル４１を回転させて、チャック４２（ウェハＷ）を加工位置Ａ２に移動させる。 When the wafer W is roughly ground to a desired thickness, the rotary table 41 is rotated to move the chuck 42 (wafer W) to the processing position A2.
　加工位置Ａ２では、先ず、接触式測定機構１１０を用いてウェハＷの厚みを測定しながら中研削部９０を用いてウェハＷの裏面Ｗｂを中研削し、その後、かかる中研削の途中で厚み測定部を接触式測定機構１１０から非接触測定機構１２０に切り替える。上述したように、ウェハＷの厚み測定には非接触測定機構１２０を用いることが好ましいが、粗研削直後の裏面Ｗｂの粗度が大きい状態で非接触測定機構１２０を用いた場合、当該裏面Ｗｂからの反射光にばらつきが生じ、安定した測定結果を得られないおそれがある。 At the processing position A2, first, the back surface Wb of the wafer W is medium-ground using the middle grinding unit 90 while measuring the thickness of the wafer W using the contact type measuring mechanism 110, and then the thickness is measured during the middle grinding. The unit is switched from the contact type measuring mechanism 110 to the non-contact measuring mechanism 120. As described above, it is preferable to use the non-contact measuring mechanism 120 for measuring the thickness of the wafer W, but when the non-contact measuring mechanism 120 is used in a state where the roughness of the back surface Wb immediately after rough grinding is large, the back surface Wb is used. There is a possibility that stable measurement results cannot be obtained due to variations in the reflected light from.
　そこで本実施形態において加工位置Ａ２では、中研削処理の初期においては接触式測定機構１１０によるウェハＷの厚み測定と、非接触測定機構１２０による厚み測定の可否の判定（以下、非接触測定機構１２０の「測定可能判定」という。）を並行して行う。そして、中研削処理の進行により粗研削後の裏面Ｗｂの粗度が改善（前研削処理）され、非接触測定機構１２０による厚み測定を適切に実施できると判定されると非接触測定機構１２０による厚み測定を開始し、その後、接触式測定機構１１０による厚み測定を終了する。 Therefore, in the processing position A2 in the present embodiment, at the initial stage of the medium grinding process, the thickness of the wafer W is measured by the contact type measuring mechanism 110 and the determination of whether or not the thickness can be measured by the non-contact measuring mechanism 120 (hereinafter, the non-contact measuring mechanism 120). "Measurable judgment") is performed in parallel. Then, when it is determined that the roughness of the back surface Wb after rough grinding is improved (pre-grinding process) by the progress of the middle grinding process and the thickness measurement by the non-contact measuring mechanism 120 can be appropriately performed, the non-contact measuring mechanism 120 determines. The thickness measurement is started, and then the thickness measurement by the contact type measuring mechanism 110 is completed.
　具体的には、本実施形態にかかる加工装置１の加工位置Ａ２においては、先ず図７（ａ）に示すように、加工位置Ａ１の粗研削処理と同様の方法、すなわち接触式測定機構１１０により厚み測定を行いながら、ウェハＷの裏面Ｗｂを中研削する（図８のプロセスＰ１）。なお、図８（ａ）は、加工位置Ａ２における接触式測定機構１１０及び非接触測定機構１２０のそれぞれにおけるウェハＷの厚み測定結果の一例を示している。また図８（ｂ）は、図８（ａ）における非接触測定機構１２０の測定結果の一例の詳細を示している。 Specifically, in the machining position A2 of the machining apparatus 1 according to the present embodiment, first, as shown in FIG. 7A, the same method as the rough grinding process at the machining position A1, that is, the contact type measuring mechanism 110 is used. While measuring the thickness, the back surface Wb of the wafer W is medium-ground (process P1 in FIG. 8). Note that FIG. 8A shows an example of the thickness measurement result of the wafer W in each of the contact type measurement mechanism 110 and the non-contact measurement mechanism 120 at the processing position A2. Further, FIG. 8B shows the details of an example of the measurement result of the non-contact measurement mechanism 120 in FIG. 8A.
　ウェハＷの厚みが裏面Ｗｂの粗度を改善するための所望の厚みまで減少されると、次に、図７（ｂ）に示すように裏面Ｗｂの中研削、及び接触式測定機構１１０による厚み測定を継続しながら、非接触測定機構１２０の測定可能判定を開始する（図８のプロセスＰ２）。非接触測定機構１２０の測定可能判定は、センサ１２１から照射された光の、ウェハＷの表面Ｗａ及び裏面Ｗｂからの反射光に基づいて算出された、ウェハＷの本体厚みのパルスデータを用いて行われる。具体的には、例えば図８に示すように、算出部１２２において算出された一の本体厚みデータｄ（ｎ）と、直前に算出された他の本体厚みデータｄ（ｎ－１）の差分値が、予め定められた閾値内に複数回連続的に収まった場合に、非接触測定機構１２０による正確な厚み測定が可能になったと判定する。換言すれば、連続的に算出される本体厚みデータの経時バラつきが小さくなると、非接触測定機構１２０により測定される本体厚みが測定結果として信用できるデータであると判断し、非接触測定機構１２０による正確な厚み測定が可能になったと判定する。 When the thickness of the wafer W is reduced to a desired thickness for improving the roughness of the back surface Wb, then, as shown in FIG. 7 (b), the thickness by the medium grinding of the back surface Wb and the contact type measuring mechanism 110. While continuing the measurement, the measurable determination of the non-contact measuring mechanism 120 is started (process P2 in FIG. 8). The measurable determination of the non-contact measurement mechanism 120 uses the pulse data of the body thickness of the wafer W calculated based on the reflected light from the front surface Wa and the back surface Wb of the wafer W of the light emitted from the sensor 121. Will be done. Specifically, for example, as shown in FIG. 8, the difference value between one main body thickness data d (n) calculated by the calculation unit 122 and another main body thickness data d (n-1) calculated immediately before. However, when it is continuously contained within a predetermined threshold value a plurality of times, it is determined that accurate thickness measurement by the non-contact measuring mechanism 120 is possible. In other words, when the variation over time in the continuously calculated body thickness data becomes small, it is determined that the body thickness measured by the non-contact measuring mechanism 120 is reliable data as a measurement result, and the non-contact measuring mechanism 120 determines that the data is reliable. It is determined that accurate thickness measurement is possible.
　本実施形態においては、このように裏面Ｗｂの粗度を中研削により改善した後に、非接触測定機構１２０の測定可能判定を行う。裏面Ｗｂの粗度が大きい状態で測定可能判定を開始した場合、上述したように非接触測定機構１２０の反射光（測定される厚みデータ）にバラつきが生じ、安定した測定可能判定を行うことができない。すなわち、例えば測定された厚みデータにばらつきが生じ、測定された厚みデータが偶然に閾値内に収まり、非接触測定機構１２０による正確な厚み測定が実施できないタイミングで、正確な厚み測定が可能になったと誤判定するおそれがある。この点、このように裏面Ｗｂの粗度を改善して、測定される厚みデータのバラつきが小さくなった後に測定可能判定を行うことにより、この測定可能判定における誤判定の発生リスクを低減することができる。 In the present embodiment, after the roughness of the back surface Wb is improved by medium grinding in this way, the measurable determination of the non-contact measuring mechanism 120 is performed. When the measurable determination is started with the back surface Wb having a large roughness, the reflected light (measured thickness data) of the non-contact measurement mechanism 120 varies as described above, and a stable measurable determination can be made. Can not. That is, for example, the measured thickness data varies, and the measured thickness data happens to fall within the threshold value, so that accurate thickness measurement becomes possible at a timing when accurate thickness measurement by the non-contact measurement mechanism 120 cannot be performed. There is a risk of misjudgment. In this regard, by improving the roughness of the back surface Wb in this way and performing the measurable determination after the variation in the measured thickness data becomes small, the risk of erroneous determination in this measurable determination can be reduced. Can be done.
　また、測定された厚みデータが閾値内に収まったか否かの判定を、上述したように連続的に複数回に収まった場合に行うことにより、このような測定可能判定における誤判定の発生リスクを更に適切に低減することができる。 Further, by performing a determination as to whether or not the measured thickness data is within the threshold value when the measured thickness data is continuously contained a plurality of times as described above, the risk of erroneous determination in such a measurable determination can be reduced. Further, it can be appropriately reduced.
　なお、判定に用いる閾値として用いられるデータとしては、例えば中研削部９０の研削砥石の下降速度による、非接触測定機構１２０による測定周期当たりのウェハＷの研削量等を用いることができる。かかる場合、用いられる閾値としては、例えばこの測定周期当たりのウェハＷの研削量±１μｍとすることができる。 As the data used as the threshold value used for the determination, for example, the grinding amount of the wafer W per measurement cycle by the non-contact measuring mechanism 120 due to the descending speed of the grinding wheel of the middle grinding unit 90 can be used. In such a case, the threshold value used may be, for example, the grinding amount of the wafer W per measurement cycle of ± 1 μm.
　ただし、閾値として用いるデータはこの「測定周期当たりの研削量」に限定されるものではなく、任意のデータを閾値として用いることができ、また、閾値とするデータ値も当然に任意の値とすることができる。例えば、非接触測定機構１２０による厚みの測定値を、接触式測定機構１１０による厚みの測定値と比較することにより測定可能判定を行ってもよい。換言すれば、接触式測定機構１１０によるウェハＷの厚みの測定結果を、閾値として用いてもよい。 However, the data used as the threshold value is not limited to this "grinding amount per measurement cycle", and any data can be used as the threshold value, and the data value used as the threshold value is naturally set to any value. be able to. For example, the measurable determination may be made by comparing the thickness measurement value by the non-contact measurement mechanism 120 with the thickness measurement value by the contact type measurement mechanism 110. In other words, the measurement result of the thickness of the wafer W by the contact type measuring mechanism 110 may be used as a threshold value.
　また、非接触測定機構１２０による測定が可能になったと判定するための、差分値が閾値内に収まる連続回数も特に限定されるものではなく、２回以上の任意の回数に決定することができる。ただし、上述のような測定可能判定における誤判定の発生リスクを低減する観点からは、この連続回数は多い方が好ましい。 Further, the number of consecutive times in which the difference value is within the threshold value for determining that the measurement by the non-contact measurement mechanism 120 is possible is not particularly limited, and can be determined to be any number of times of two or more. .. However, from the viewpoint of reducing the risk of erroneous determination in the above-mentioned measurable determination, it is preferable that the number of consecutive times is large.
　非接触測定機構１２０による測定が可能になったと判定されると、測定可能判定処理を終了し、非接触測定機構１２０により算出される厚みデータのウェハＷの厚みとしての利用を開始する。そして、非接触測定機構１２０による厚み測定が開始されると、その後、図７（ｃ）に示すようにプローブ１１４、１１５を離接させることにより接触式測定機構１１０によるウェハＷの厚み測定を停止し（図８のプロセスＰ３）、これにより加工位置Ａ２における厚み測定部が接触式測定機構１１０から非接触測定機構１２０に切り替えられる。 When it is determined that the measurement by the non-contact measurement mechanism 120 is possible, the measurable determination process is terminated and the thickness data calculated by the non-contact measurement mechanism 120 is used as the thickness of the wafer W. Then, when the thickness measurement by the non-contact measurement mechanism 120 is started, the thickness measurement of the wafer W by the contact type measurement mechanism 110 is stopped by separating and contacting the probes 114 and 115 as shown in FIG. 7 (c). (Process P3 in FIG. 8), whereby the thickness measuring unit at the machining position A2 is switched from the contact measuring mechanism 110 to the non-contact measuring mechanism 120.
　なお、測定可能判定において非接触測定機構１２０による測定が不可能であると判定された場合、すなわち、連続的に算出される本体厚みデータの経時バラつきが小さくならない場合には、厚み測定部の切り替えを行わずに、ウェハＷの中研削処理が継続される。このように厚み測定部の切り替えができなかった場合、当該ウェハＷの中研削処理の終了直後にエラーを発報してもよいし、接触式測定機構１１０を用いて研削処理を継続してもよい。 If it is determined in the measurable determination that the measurement by the non-contact measurement mechanism 120 is impossible, that is, if the variation in the body thickness data calculated continuously with time does not become small, the thickness measuring unit is switched. The middle grinding process of the wafer W is continued without performing the above. When the thickness measuring unit cannot be switched in this way, an error may be issued immediately after the completion of the medium grinding process of the wafer W, or the grinding process may be continued using the contact type measuring mechanism 110. good.
　厚み測定部が接触式測定機構１１０から非接触測定機構１２０に切り替えられると、その後、加工位置Ａ２における中研削処理が更に継続される。そして、ウェハＷが目標の厚みまで中研削されると終点として検知され、中研削部９０の研削送り、及び研削を終了する。その後、回転テーブル４１を回転させて、チャック４２（ウェハＷ）を加工位置Ａ３に移動させる。 When the thickness measuring unit is switched from the contact measuring mechanism 110 to the non-contact measuring mechanism 120, the medium grinding process at the machining position A2 is further continued. Then, when the wafer W is medium-ground to the target thickness, it is detected as an end point, and the grinding feed and grinding of the medium-grinding unit 90 are completed. After that, the rotary table 41 is rotated to move the chuck 42 (wafer W) to the processing position A3.
　加工位置Ａ３では、図９に示すように非接触測定機構１２０によりウェハＷの本体厚みを測定しながら、仕上研削部１００を用いてウェハＷの裏面Ｗｂを仕上研削する。加工位置Ａ３では、粗研削部８０及び中研削部９０においてウェハＷの厚みが充分に減少され、また裏面Ｗｂの粗度が改善されているため、適切に非接触測定機構１２０による厚み測定を行うことができる。 At the processing position A3, the back surface Wb of the wafer W is finish-ground using the finish grinding unit 100 while measuring the thickness of the main body of the wafer W by the non-contact measurement mechanism 120 as shown in FIG. At the processing position A3, the thickness of the wafer W is sufficiently reduced in the rough grinding portion 80 and the middle grinding portion 90, and the roughness of the back surface Wb is improved. Therefore, the thickness is appropriately measured by the non-contact measuring mechanism 120. be able to.
　ウェハＷの仕上研削処理が完了すると、次に、回転テーブル４１を回転させてチャック４２を受渡位置Ａ０に移動させる。受渡位置Ａ０では、ウェハＷを回転させながら非接触測定機構１２０によりウェハＷの中央部付近と、周縁部付近を含む複数点の本体厚みが測定され、これにより当該ウェハＷの平坦度（ＴＴＶ：Ｔｏｔａｌ　Ｔｈｉｃｋｎｅｓｓ　Ｖａｒｉａｔｉｏｎ）が算出される。 When the finish grinding process of the wafer W is completed, next, the rotary table 41 is rotated to move the chuck 42 to the delivery position A0. At the delivery position A0, the thickness of the main body of a plurality of points including the vicinity of the central portion and the vicinity of the peripheral portion of the wafer W is measured by the non-contact measurement mechanism 120 while rotating the wafer W, whereby the flatness of the wafer W (TTV: Total Tickness Variation) is calculated.
　続いてウェハＷは、搬送部３０により受渡位置Ａ０から第２の洗浄部７０に搬送され、搬送パッド３２に保持された状態でウェハＷの表面Ｗａが洗浄される。 Subsequently, the wafer W is conveyed from the delivery position A0 to the second cleaning unit 70 by the transfer unit 30, and the surface Wa of the wafer W is cleaned while being held by the transfer pad 32.
　次にウェハＷは、搬送部３０により第２の洗浄部７０から第１の洗浄部６０に搬送され、洗浄液ノズル（図示せず）を用いて、ウェハＷの表面Ｗａ及び裏面Ｗｂが洗浄される。 Next, the wafer W is transported from the second cleaning unit 70 to the first cleaning unit 60 by the transport unit 30, and the front surface Wa and the back surface Wb of the wafer W are cleaned using a cleaning liquid nozzle (not shown). ..
　その後、すべての処理が施されたウェハＷは、ウェハ搬送装置２２の搬送フォーク２３によってカセット載置台１０のカセットＣに搬送される。こうして、加工装置１における一連のウェハ処理が終了する。 After that, the wafer W to which all the processing has been performed is transferred to the cassette C of the cassette mounting table 10 by the transfer fork 23 of the wafer transfer device 22. In this way, a series of wafer processing in the processing apparatus 1 is completed.
　以上、本実施形態にかかるウェハ処理によれば、測定可能判定において非接触測定機構１２０による正確な厚み測定が可能であると判定された後に、非接触測定機構１２０による算出データのウェハＷの厚みとしての利用を開始し、その後、厚み測定部を接触式測定機構１１０から非接触測定機構１２０に切り替える。このため、厚み測定部の切り替えに際してウェハＷの厚み測定を安定して継続することができる。 As described above, according to the wafer processing according to the present embodiment, after it is determined in the measurable determination that accurate thickness measurement by the non-contact measurement mechanism 120 is possible, the thickness of the wafer W of the data calculated by the non-contact measurement mechanism 120 After that, the thickness measuring unit is switched from the contact type measuring mechanism 110 to the non-contact measuring mechanism 120. Therefore, the thickness measurement of the wafer W can be stably continued when the thickness measuring unit is switched.
　またこのとき、測定可能判定では非接触測定機構１２０で連続して取得される本体厚みのデータの差分値が、閾値内に連続的に複数回収まった場合に、当該非接触測定機構１２０による正確な厚み測定が可能になったと判定する。このように、非接触測定機構１２０による正確な厚み測定が可能であるか否かを、本体厚みのデータの差分値が閾値内に複数回連続して収まった後に行うことにより、測定データのバラつきに起因する測定可能判定の誤判定の発生リスクが低減することができる。すなわち、接触式測定機構１１０から非接触測定機構１２０への動作切り替えを、非接触測定機構１２０により測定される本体厚みが測定結果として信用できるデータであると判断された後に適切に行うことができる。 At this time, in the measurable determination, when a plurality of difference values of the body thickness data continuously acquired by the non-contact measurement mechanism 120 are continuously collected within the threshold value, the non-contact measurement mechanism 120 accurately collects the difference values. It is determined that various thickness measurements have become possible. In this way, whether or not accurate thickness measurement by the non-contact measurement mechanism 120 is possible is performed after the difference value of the body thickness data is continuously set within the threshold value a plurality of times, so that the measurement data varies. It is possible to reduce the risk of erroneous judgment of measurable judgment due to the above. That is, the operation can be appropriately switched from the contact type measuring mechanism 110 to the non-contact measuring mechanism 120 after it is determined that the body thickness measured by the non-contact measuring mechanism 120 is reliable data as a measurement result. ..
　また本実施形態においては、測定可能判定をウェハＷの中研削により裏面Ｗｂの粗度が改善された後に開始する。これにより、非接触測定機構１２０の測定可能判定における誤判定のリスクを低減することができ、すなわち接触式測定機構１１０から非接触測定機構１２０への動作切り替えを更に適切に行うことができる。 Further, in the present embodiment, the measurable determination is started after the roughness of the back surface Wb is improved by the middle grinding of the wafer W. As a result, the risk of erroneous determination in the measurable determination of the non-contact measurement mechanism 120 can be reduced, that is, the operation of the contact type measurement mechanism 110 can be switched to the non-contact measurement mechanism 120 more appropriately.
　また本実施形態によれば、以上の厚み測定部の切り替え動作を、オペレータによる動作を介することなく、測定されたパルスデータに基づいて自動化して行うことができる。これにより、オペレータの動作を介することによる不具合の発生を抑制できるとともに、加工装置１における研削処理にかかるスループットを適切に向上することができる。 Further, according to the present embodiment, the above switching operation of the thickness measuring unit can be automated based on the measured pulse data without the intervention of the operation by the operator. As a result, it is possible to suppress the occurrence of defects due to the operation of the operator, and it is possible to appropriately improve the throughput required for the grinding process in the processing apparatus 1.
　なお、以上の実施形態においてはウェハＷの裏面Ｗｂの粗度を改善した後に非接触測定機構１２０の測定可能判定を行うためのウェハＷの厚み測定を開始したが、このウェハＷの厚み測定は中研削処理と同時に開始してもよい。また、当該測定可能判定を中研削処理と同時に開始してもよい。かかる場合であっても、非接触測定機構１２０によるウェハＷの厚み測定を、非接触測定機構１２０で取得される本体厚みのデータの差分値が閾値内に複数回連続して収まった後に開始することで、適切に厚み測定部の切り替えを行うことができる。 In the above embodiment, after improving the roughness of the back surface Wb of the wafer W, the thickness measurement of the wafer W for determining the measurable property of the non-contact measurement mechanism 120 is started, but the thickness measurement of the wafer W is performed. It may be started at the same time as the medium grinding process. Further, the measurable determination may be started at the same time as the middle grinding process. Even in such a case, the thickness measurement of the wafer W by the non-contact measurement mechanism 120 is started after the difference value of the main body thickness data acquired by the non-contact measurement mechanism 120 is continuously set within the threshold value a plurality of times. Therefore, the thickness measuring unit can be appropriately switched.
　また以上の実施形態においては、加工位置Ａ１の粗研削部８０によりウェハＷの厚みを非接触測定機構１２０の厚み測定範囲（例えば５～３００μｍ）まで減少させた後、ウェハＷを加工位置Ａ２に移動させた。しかしながら、加工位置Ａ２に投入されるウェハＷの厚みはこれに限定されるものではなく、非接触測定機構１２０の厚み測定範囲よりも大きい厚み（例えば３００μｍ超）で、ウェハＷを加工位置Ａ２に投入してもよい。かかる場合、加工位置Ａ２の中研削部９０によりウェハＷの厚みを非接触測定機構１２０の厚み測定範囲まで減少（前研削処理）させた後、非接触測定機構１２０の測定可能判定を開始させる。 Further, in the above embodiment, the thickness of the wafer W is reduced to the thickness measurement range (for example, 5 to 300 μm) of the non-contact measuring mechanism 120 by the rough grinding portion 80 at the machining position A1, and then the wafer W is moved to the machining position A2. I moved it. However, the thickness of the wafer W put into the processing position A2 is not limited to this, and the wafer W is moved to the processing position A2 with a thickness larger than the thickness measurement range of the non-contact measurement mechanism 120 (for example, more than 300 μm). You may put it in. In such a case, the thickness of the wafer W is reduced to the thickness measurement range of the non-contact measurement mechanism 120 (pre-grinding process) by the middle grinding portion 90 at the processing position A2, and then the measurable determination of the non-contact measurement mechanism 120 is started.
　また、以上の実施形態においては研削部４０が３軸構成（粗研削部８０、中研削部９０、仕上研削部１００）である場合を例に説明を行ったが、研削処理において厚み測定部の切り替え動作を必要とするものであれば、研削部４０の構成はこれに限定されるものではない。例えば研削部は、粗研削部８０（又は中研削部９０）と仕上研削部１００のみが設けられた２軸構成であってもよいし、１つの研削部のみが設けられた１軸構成であってもよい。 Further, in the above embodiment, the case where the grinding unit 40 has a three-axis configuration (rough grinding unit 80, medium grinding unit 90, finish grinding unit 100) has been described as an example, but in the grinding process, the thickness measuring unit The configuration of the grinding unit 40 is not limited to this as long as it requires a switching operation. For example, the grinding portion may have a biaxial configuration in which only the rough grinding portion 80 (or the medium grinding portion 90) and the finish grinding portion 100 are provided, or a uniaxial configuration in which only one grinding portion is provided. You may.
　また更に、以上の実施形態においては、加工装置１の研削部４０においてウェハＷの裏面Ｗｂに研削処理を施して薄化する場合を例に説明を行ったが、ウェハＷの薄化方法もこれに限定されるものではない。具体的には、図１０（ａ）に示すようにウェハＷの内部にレーザ光（例えばＹＡＧレーザ）を照射することにより改質層Ｍを形成し、図１０（ｂ）に示すように当該改質層Ｍを基点としてウェハＷを分離して薄化する場合であっても、本開示に係る技術を適用することができる。このように改質層Ｍを基点としてウェハＷの分離を行った場合、ウェハＷの分離面は残存する改質層Ｍ（ダメージ層）の影響により粗度が大きく、非接触測定機構１２０による厚み測定を正確に行うことができないおそれがある。そこで、図１０（ｃ）に示したように、ダメージ層を除去するための研削処理において、先ず、接触式測定機構１１０による厚み測定を行いながら非接触測定機構１２０の測定可能判定を行い、分離面の粗度の改善後（ダメージ層の除去後）、非接触測定機構１２０への切り替えを行う。 Further, in the above embodiment, the case where the back surface Wb of the wafer W is subjected to the grinding process to be thinned in the grinding unit 40 of the processing apparatus 1 has been described as an example, but the method for thinning the wafer W is also the same. Not limited to. Specifically, the modified layer M is formed by irradiating the inside of the wafer W with a laser beam (for example, a YAG laser) as shown in FIG. 10 (a), and the modification is performed as shown in FIG. 10 (b). Even when the wafer W is separated and thinned with the layer M as a base point, the technique according to the present disclosure can be applied. When the wafer W is separated from the modified layer M as a base point in this way, the separation surface of the wafer W has a large roughness due to the influence of the remaining modified layer M (damage layer), and the thickness by the non-contact measurement mechanism 120. It may not be possible to make accurate measurements. Therefore, as shown in FIG. 10 (c), in the grinding process for removing the damaged layer, first, the non-contact measuring mechanism 120 is determined to be measurable while measuring the thickness by the contact measuring mechanism 110, and then separated. After the surface roughness is improved (after the damaged layer is removed), the non-contact measurement mechanism 120 is switched to.
　なお以上の実施形態においては、非接触測定機構１２０のセンサ１２１から光を照射し、当該光のウェハＷからの反射光に基づいて算出されるパルスデータに基づいて、測定可能判定を行った。しかしながら、測定可能判定に用いられるデータはパルスデータに限られるものではなく、例えば連続光の反射光により算出される連続データに基づいて、測定可能判定を行ってもよい。かかる場合、当該測定可能判定は、上記実施形態のように本体厚みデータの差分値が閾値内に複数回連続的に収まったか否か、を判定に用いることに代え、算出された本体厚みデータが所望の時間で閾値内に収まり続けたか否か、を判定に用いることができる。 In the above embodiment, light is irradiated from the sensor 121 of the non-contact measurement mechanism 120, and the measurable determination is made based on the pulse data calculated based on the reflected light from the wafer W of the light. However, the data used for the measurable determination is not limited to the pulse data, and the measurable determination may be made based on the continuous data calculated by the reflected light of the continuous light, for example. In such a case, the measurable determination is based on the calculated body thickness data instead of using whether or not the difference value of the body thickness data is continuously within the threshold value as in the above embodiment. Whether or not it continues to be within the threshold value at a desired time can be used for determination.
　なお以上の実施形態においては、図１に示したように基板としてのウェハＷが、表面ＷａにデバイスＤ、保護テープＴを有する単ウェハである場合を例に説明を行ったが、ウェハＷの構成も上記実施形態に限定されるものではない。具体的には、表面にデバイスが形成された第１のウェハと、第２のウェハとが相互に接合された重合ウェハにおいて、第１のウェハを薄化する場合においても、本開示に係る技術を適用することができる。 In the above embodiment, the case where the wafer W as the substrate is a single wafer having the device D and the protective tape T on the surface Wa as shown in FIG. 1 has been described as an example, but the wafer W has been described. The configuration is also not limited to the above embodiment. Specifically, in a polymerized wafer in which a first wafer having a device formed on its surface and a second wafer are joined to each other, even when the first wafer is thinned, the technique according to the present disclosure. Can be applied.
　今回開示された実施形態はすべての点で例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の請求の範囲及びその主旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。 The embodiments disclosed this time should be considered to be exemplary in all respects and not restrictive. The above embodiments may be omitted, replaced or modified in various forms without departing from the scope of the appended claims and their gist.
　　１　　　加工装置
　　４０　　研削部
　　１１０　接触式測定機構
　　１２０　非接触測定機構
　　１３０　制御部
　　Ｗ　　　ウェハ
　　Ｗｂ　　裏面
 
  1 Processing equipment 40 Grinding part 110 Contact type measuring mechanism 120 Non-contact measuring mechanism 130 Control part W Wafer Wb Back side

Claims (14)

  1. 基板を処理する基板処理システムであって、
    前記基板の加工面を研削する研削部と、
    前記基板の厚みを測定する厚み測定部と、
    前記厚み測定部の動作を制御する制御部と、を有し、
    前記厚み測定部は、
    前記基板の前記加工面と接触して当該基板の厚みを測定する接触式測定機構と、
    前記基板とは非接触で当該基板の厚みを測定する非接触測定機構と、を備え、
    前記制御部は、
    前記研削部による前記基板の研削処理に際して、前記接触式測定機構による前記基板の厚み測定動作の制御を行うことと、前記非接触測定機構による測定可能判定動作の制御を行うことと、を並行して行い、
    前記測定可能判定動作の制御においては、
    前記非接触測定機構により取得される一の厚み測定値と、当該一の厚み測定値の直前に取得された他の厚み測定値と、の差分値を経時的に連続して算出し、
    算出された前記差分値が、予め定められた閾値内に連続して収まった場合に前記基板の厚み測定が可能であると判定して、前記非接触測定機構による前記基板の厚み測定動作を開始させる制御を行う、基板処理システム。     It is a board processing system that processes boards.
    A grinding part that grinds the machined surface of the substrate, and
    A thickness measuring unit that measures the thickness of the substrate,
    It has a control unit that controls the operation of the thickness measuring unit, and has.
    The thickness measuring unit is
    A contact-type measuring mechanism that measures the thickness of the substrate in contact with the machined surface of the substrate.
    A non-contact measuring mechanism for measuring the thickness of the substrate in a non-contact manner with the substrate is provided.
    The control unit
    In the grinding process of the substrate by the grinding unit, the contact type measuring mechanism controls the thickness measuring operation of the substrate and the non-contact measuring mechanism controls the measurable determination operation in parallel. Do it
    In the control of the measurable determination operation,
    The difference value between one thickness measurement value acquired by the non-contact measurement mechanism and another thickness measurement value acquired immediately before the one thickness measurement value is continuously calculated over time.
    When the calculated difference value is continuously within a predetermined threshold value, it is determined that the thickness of the substrate can be measured, and the thickness measurement operation of the substrate by the non-contact measurement mechanism is started. A board processing system that controls the operation.
  2. 前記制御部は、前記非接触測定機構による厚み測定動作の開始後、前記接触式測定機構を前記加工面から離接して、前記接触式測定機構による厚み測定動作を停止させる制御を行う、請求項１に記載の基板処理システム。 The control unit controls to stop the thickness measurement operation by the contact measurement mechanism by separating the contact measurement mechanism from the machined surface after starting the thickness measurement operation by the non-contact measurement mechanism. The substrate processing system according to 1.
  3. 前記制御部は、前記接触式測定機構による前記基板の厚み測定結果を前記閾値として用いる制御を行う、請求項１又は２に記載の基板処理システム。 The substrate processing system according to claim 1 or 2, wherein the control unit controls using the thickness measurement result of the substrate by the contact type measuring mechanism as the threshold value.
  4. 前記制御部は、
    前記非接触測定機構による測定可能判定動作に先立って、前記研削部により前記加工面の前研削処理を行うように、前記研削部の動作を制御する、請求項１～３のいずれか一項に記載の基板処理システム。     The control unit
    According to any one of claims 1 to 3, the operation of the grinded portion is controlled so that the pre-grinding process of the machined surface is performed by the grinded portion prior to the measurable determination operation by the non-contact measuring mechanism. The substrate processing system described.
  5. 前記制御部は、前記前研削処理に際して、前記接触式測定機構により前記基板の厚み測定動作を行うように、前記厚み測定部の動作を制御する、請求項４に記載の基板処理システム。 The substrate processing system according to claim 4, wherein the control unit controls the operation of the thickness measuring unit so that the thickness measuring operation of the substrate is performed by the contact type measuring mechanism at the time of the pre-grinding process.
  6. 前記前研削処理においては、前記非接触測定機構による検知範囲内の厚みを有する前記基板の前記加工面を予め定められた厚みで研削し、当該加工面の粗度を向上させる、請求項４又は５に記載の基板処理システム。 In the pre-grinding process, claim 4 or the present invention comprises grinding the machined surface of the substrate having a thickness within the detection range by the non-contact measuring mechanism to a predetermined thickness to improve the roughness of the machined surface. 5. The substrate processing system according to 5.
  7. 前記前研削処理においては、前記非接触測定機構による検知範囲外の厚みを有する前記基板の前記加工面を、当該基板の厚みが検知範囲内に到達するまで研削する、請求項４又は５に記載の基板処理システム。 The fourth or fifth aspect of the present invention, wherein in the pre-grinding process, the machined surface of the substrate having a thickness outside the detection range by the non-contact measurement mechanism is ground until the thickness of the substrate reaches the detection range. Board processing system.
  8. 基板を処理する基板処理方法であって、
    前記基板の加工面を研削することと、
    前記加工面の研削と並行して、接触式測定機構を用いて前記基板の厚みを測定することと、
    前記加工面の研削及び接触式測定機構による厚み測定と並行して、非接触測定機構により前記基板の厚みが測定可能か否かを判定することと、
    前記非接触測定機構の測定可能判定結果に基づいて、当該非接触測定機構による前記基板の厚み測定を開始することと、を含み、
    前記非接触測定機構の測定可能判定においては、
    前記非接触測定機構により取得される一の厚み測定値と、当該一の厚み測定値の直前に取得された他の厚み測定値と、の差分値を経時的に連続して算出し、
    算出された前記差分値が、予め定められた閾値内に連続して収まった場合に前記基板の厚み測定が可能であると判定する、基板処理方法。     It is a substrate processing method that processes a substrate.
    Grinding the machined surface of the substrate and
    In parallel with grinding the machined surface, measuring the thickness of the substrate using a contact-type measuring mechanism,
    In parallel with the grinding of the machined surface and the thickness measurement by the contact type measuring mechanism, it is determined whether or not the thickness of the substrate can be measured by the non-contact measuring mechanism.
    Including starting the thickness measurement of the substrate by the non-contact measuring mechanism based on the measurable determination result of the non-contact measuring mechanism.
    In the measurable determination of the non-contact measurement mechanism,
    The difference value between one thickness measurement value acquired by the non-contact measurement mechanism and another thickness measurement value acquired immediately before the one thickness measurement value is continuously calculated over time.
    A substrate processing method for determining that the thickness of the substrate can be measured when the calculated difference value continuously falls within a predetermined threshold value.
  9. 前記非接触測定機構による前記基板の厚み測定の開始後、前記接触式測定機構による前記基板の厚み測定を停止させる、ことを含む、請求項８に記載の基板処理方法。 The substrate processing method according to claim 8, further comprising stopping the thickness measurement of the substrate by the contact type measurement mechanism after the start of the thickness measurement of the substrate by the non-contact measurement mechanism.
  10. 前記接触式測定機構による前記基板の厚み測定結果を前記閾値として用いる、請求項８又は９に記載の基板処理方法。 The substrate processing method according to claim 8 or 9, wherein the thickness measurement result of the substrate by the contact type measuring mechanism is used as the threshold value.
  11. 前記非接触測定機構の測定可能判定に先立って、前記加工面の前研削処理を行い、
    前記加工面の前研削処理においては、前記接触式測定機構による前記基板の厚み測定を行う、請求項８～１０のいずれか一項に記載の基板処理方法。     Prior to the measurable determination of the non-contact measurement mechanism, the pre-grinding process of the machined surface is performed.
    The substrate processing method according to any one of claims 8 to 10, wherein in the pre-grinding process of the machined surface, the thickness of the substrate is measured by the contact type measuring mechanism.
  12. 前記前研削処理においては、前記非接触測定機構による検知範囲内の厚みを有する前記基板の前記加工面を予め定められた厚みで研削し、当該加工面の粗度を向上させる、請求項１１に記載の基板処理方法。 In claim 11, in the pre-grinding process, the machined surface of the substrate having a thickness within the detection range by the non-contact measuring mechanism is ground to a predetermined thickness to improve the roughness of the machined surface. The substrate processing method described.
  13. 前記前研削処理においては、前記非接触測定機構による検知範囲外の厚みを有する前記基板の前記加工面を、当該基板の厚みが検知範囲内に到達するまで研削する、請求項１１に記載の基板処理方法。 The substrate according to claim 11, wherein in the pre-grinding process, the machined surface of the substrate having a thickness outside the detection range by the non-contact measurement mechanism is ground until the thickness of the substrate reaches within the detection range. Processing method.
  14. 基板を処理する基板処理方法を基板処理システムによって実行させるように、当該基板処理システムを制御する制御部のコンピュータ上で動作するプログラムを格納した読み取り可能なコンピュータ記憶媒体であって、
    前記基板処理システムは、
    　前記基板の加工面を研削する研削部と、
    　前記基板の厚みを測定する厚み測定部と、
    　前記厚み測定部の動作を制御する制御部と、を有し、
    　前記厚み測定部は、
    　前記基板の前記加工面と接触して当該基板の厚みを測定する接触式測定機構と、
    　前記基板とは非接触で当該基板の厚みを測定する非接触測定機構と、を備え、
    前記基板処理方法は、
    前記基板の加工面を研削することと、
    前記加工面の研削と並行して、接触式測定機構を用いて前記基板の厚みを測定することと、
    前記加工面の研削及び接触式測定機構による厚み測定と並行して、非接触測定機構により前記基板の厚みが測定可能か否かを判定することと、
    前記非接触測定機構の測定可能判定結果に基づいて、当該非接触測定機構による前記基板の厚み測定を開始することと、を含み、
    前記非接触測定機構の測定可能判定においては、
    前記非接触測定機構により取得される一の厚み測定値と、当該一の厚み測定値の直前に取得された他の厚み測定値と、の差分値を経時的に連続して算出し、
    算出された前記差分値が、予め定められた閾値内に連続して収まった場合に前記基板の厚み測定が可能であると判定する、コンピュータ記憶媒体。     A readable computer storage medium that stores a program that operates on the computer of the control unit that controls the board processing system so that the board processing method for processing the board is executed by the board processing system.
    The board processing system is
    A grinding part that grinds the machined surface of the substrate, and
    A thickness measuring unit that measures the thickness of the substrate,
    It has a control unit that controls the operation of the thickness measuring unit, and has.
    The thickness measuring unit is
    A contact-type measuring mechanism that measures the thickness of the substrate in contact with the machined surface of the substrate.
    A non-contact measuring mechanism for measuring the thickness of the substrate in a non-contact manner with the substrate is provided.
    The substrate processing method is
    Grinding the machined surface of the substrate and
    In parallel with grinding the machined surface, measuring the thickness of the substrate using a contact-type measuring mechanism,
    In parallel with the grinding of the machined surface and the thickness measurement by the contact type measuring mechanism, it is determined whether or not the thickness of the substrate can be measured by the non-contact measuring mechanism.
    Including starting the thickness measurement of the substrate by the non-contact measuring mechanism based on the measurable determination result of the non-contact measuring mechanism.
    In the measurable determination of the non-contact measurement mechanism,
    The difference value between one thickness measurement value acquired by the non-contact measurement mechanism and another thickness measurement value acquired immediately before the one thickness measurement value is continuously calculated over time.
    A computer storage medium that determines that the thickness of the substrate can be measured when the calculated difference value is continuously contained within a predetermined threshold value.
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