JP7281502B2 - Polishing pad dresser and manufacturing method thereof - Google Patents

Polishing pad dresser and manufacturing method thereof Download PDF

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JP7281502B2
JP7281502B2 JP2021096152A JP2021096152A JP7281502B2 JP 7281502 B2 JP7281502 B2 JP 7281502B2 JP 2021096152 A JP2021096152 A JP 2021096152A JP 2021096152 A JP2021096152 A JP 2021096152A JP 7281502 B2 JP7281502 B2 JP 7281502B2
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polishing pad
layer
pad dresser
protective layer
bonding layer
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JP2022064826A (en
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瑞麟 周
旻紘 ▲呉▼
至中 周
品嫺 王
群凱 唐
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中國砂輪企業股▲ふん▼有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/22Lapping pads for working plane surfaces characterised by a multi-layered structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245Pads with fixed abrasives
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/001Devices or means for dressing or conditioning abrasive surfaces involving the use of electric current
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/12Dressing tools; Holders therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0018Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for by electrolytic deposition
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0054Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for by impressing abrasive powder in a matrix
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0072Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using adhesives for bonding abrasive particles or grinding elements to a support, e.g. by gluing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/009Tools not otherwise provided for
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/001Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as supporting member
    • B24D3/002Flexible supporting members, e.g. paper, woven, plastic materials
    • B24D3/004Flexible supporting members, e.g. paper, woven, plastic materials with special coatings
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/34Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
    • B24D3/346Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties utilised during polishing, or grinding operation

Description

本発明は、研磨パッドドレッサーおよびその製造方法に関し、特に、化学機械研磨(CMP)に関する。 The present invention relates to polishing pad dressers and methods of making same, and more particularly to chemical mechanical polishing (CMP).

化学機械研磨(CMP)は、半導体製造工程にとり非常に重要な手順であり、適切なサイズのウェハを製造する以外に、CMPがウェハ表面を平坦化させることでその後の集積回路を製造することができる。CMPは、研磨スラリーおよび研磨パッドを使用でき、研磨スラリーの液体に腐食性があり、中の粒子が研磨パッドの細溝を埋めて固定された後、研磨パッドの回転時に機械的摩擦を提供してウェハを研磨することで、ウェハの表面粗さを低下させて研磨効果を奏する。 Chemical-mechanical polishing (CMP) is a very important procedure in the semiconductor manufacturing process.Besides producing wafers of appropriate size, CMP also planarizes the wafer surface for the subsequent production of integrated circuits. can. CMP can use a polishing slurry and a polishing pad, the liquid of the polishing slurry is corrosive, and the particles inside fill the grooves of the polishing pad and are fixed, and then provide mechanical friction when the polishing pad rotates. By polishing the wafer with the polishing agent, the surface roughness of the wafer is reduced and a polishing effect is obtained.

しかしながら、一定期間使用した後、研磨パッドに研磨屑および硬化した研磨スラリーが堆積することで、表面に「グレージング(glazing)」または硬化を招き、すなわち細溝に硬化した研磨スラリーが埋められ、新しく充填された研磨スラリーの中粒子を保持することができないことで、研磨効果を低下してしまっていた。なお、研磨パッド表面の研磨スラリーが一定程度硬化すると突起が生じ、研磨時にウェハ表面全体の粗さを損ない、ウェハ平坦化の効果を奏することができなくなる。これ故、研磨パッドは、研磨パッドドレッサー(パッドコンディショナー、ダイヤモンドドレッサーとも呼ばれる)でドレッシングして、表面の堆積物を除去することで研磨パッドの元の作業面を回復させることで、研磨パッドの寿命を延ばすと共に交換コストを減少させる。 However, after a period of use, the build-up of debris and hardened abrasive slurry on the polishing pad causes the surface to "glazing" or harden, i.e., the grooves become filled with hardened abrasive slurry and replaced with new ones. The inability to retain the medium particles of the filled polishing slurry reduces the polishing effect. When the polishing slurry on the surface of the polishing pad hardens to a certain degree, projections are formed, which impairs the roughness of the entire wafer surface during polishing, and the effect of flattening the wafer cannot be obtained. Hence, the polishing pad is dressed with a polishing pad dresser (also called a pad conditioner, diamond dresser) to restore the original working surface of the polishing pad by removing surface deposits, thereby prolonging the life of the polishing pad. and reduce replacement costs.

しかしながら、研磨パッドドレッサーの研磨を行う作業面に研磨粒子を載置しており、長期間研磨後、作業面が摩耗により研磨粒子を保持できず、研磨粒子が脱落および位置ずれする原因となっていた。脱落した研磨粒子は、研磨パッドに残留するとウェハに傷を付け、位置がずれた研磨粒子が研磨パッドのドレッシングを不均一にさせることで、CMPの製造工程に影響を与える。これにより、どのようにして研磨パッドドレッサーの表面を損耗から保護し、研磨粒子の品質を維持するのかが、研磨パッドドレッサーの解決しようとする技術的課題である。 However, abrasive particles are placed on the working surface of the polishing pad dresser, and after a long period of polishing, the abrasive particles cannot be retained due to abrasion of the working surface, which causes the abrasive particles to come off and be displaced. rice field. If the abrasive particles that fall off remain on the polishing pad, they will scratch the wafer, and the misaligned abrasive particles will cause uneven dressing of the polishing pad, thereby affecting the CMP manufacturing process. Therefore, how to protect the surface of the polishing pad dresser from wear and maintain the quality of the abrasive particles is a technical problem to be solved by the polishing pad dresser.

上記の課題に着目し、本発明の目的は、基材と、研磨層と、保護層と、を備えた研磨パッドドレッサーを提供することである。前記研磨層は、前記基材の表面を覆い、結合層と、前記結合層に埋め込まれた複数の研磨粒子と、を備え、各前記研磨粒子が前記結合層から露出し、絶縁処理を施した突起を備える。前記保護層は、前記結合層の表面を覆い、前記突起が前記保護層の外側に露出している。 An object of the present invention is to provide a polishing pad dresser comprising a base material, a polishing layer, and a protective layer. The abrasive layer covers the surface of the base material and includes a bonding layer and a plurality of abrasive particles embedded in the bonding layer, each abrasive particle being exposed from the bonding layer and subjected to an insulating treatment. Equipped with protrusions. The protective layer covers the surface of the bonding layer, and the protrusions are exposed outside the protective layer.

好ましい実施例において、前記保護層は、電着塗料組成物から形成され、前記電着塗料組成物は主体樹脂を含み、前記主体樹脂がエポキシ樹脂、アクリル樹脂、ポリブタジエン樹脂、ポリエステル樹脂またはポリアミド樹脂である。 In a preferred embodiment, the protective layer is formed from an electrodeposition coating composition, the electrodeposition coating composition contains a main resin, and the main resin is an epoxy resin, an acrylic resin, a polybutadiene resin, a polyester resin, or a polyamide resin. be.

好ましい実施例において、前記基材は、金属基板、金属合金基板、ステンレス鋼基板またはダイス鋼基板である。 In preferred embodiments, the substrate is a metal substrate, a metal alloy substrate, a stainless steel substrate or a die steel substrate.

好ましい実施例において、前記結合層は、ろう付け材料、電気めっき材料、セラミック材料、金属材料または高分子材料である。 In preferred embodiments, the bonding layer is a brazing material, an electroplating material, a ceramic material, a metallic material or a polymeric material.

好ましい実施例において、前記研磨粒子は、天然ダイヤモンド、合成ダイヤモンド、多結晶ダイヤモンド、立方晶窒化ホウ素、アルミナおよび炭化ケイ素の群から選択される1つ以上の研磨粒子である。 In preferred embodiments, the abrasive particles are one or more abrasive particles selected from the group of natural diamond, synthetic diamond, polycrystalline diamond, cubic boron nitride, alumina and silicon carbide.

好ましい実施例において、前記研磨パッドドレッサーは、切削力(CRcompleted)を持ち、保護層で覆われていない研磨パッドドレッサーの切削力(CRinitial)と比較すると、下式に適合し、

Figure 0007281502000001
すなわち、前記切削力(CRcompleted)と前記保護層で覆われていない研磨パッドドレッサーの切削力(CRinitial)との変化率が10%未満である。 In a preferred embodiment, the polishing pad dresser has a cutting force (CR completed ) that, when compared to the cutting force (CR initial ) of a polishing pad dresser not covered with a protective layer, meets the following equation:
Figure 0007281502000001
That is, the rate of change between the cutting force (CR completed ) and the cutting force (CR initial ) of the polishing pad dresser not covered with the protective layer is less than 10%.

本発明の別の目的は、以下の工程(a)~(d)を含む研磨パッドドレッサーの製造方法を提供することである。(a)基材を用意する工程、(b)前記基材の表面に結合層と、前記結合層に埋め込まれた複数の研磨粒子と、を備え、各前記研磨粒子が前記結合層の上に露出した突起を有する研磨層を形成する工程、(c)前記突起の絶縁処理を施す工程、(d)保護層を前記結合層の表面に電着させ、かつ前記絶縁処理を施した突起を保護層の外側に露出させる工程。 Another object of the present invention is to provide a method of manufacturing a polishing pad dresser including the following steps (a) to (d). (a) providing a substrate; (b) a bonding layer on a surface of said substrate; and a plurality of abrasive particles embedded in said bonding layer, each said abrasive particle being on said bonding layer; forming a polishing layer having exposed projections; (c) insulating said projections; (d) electrodepositing a protective layer on the surface of said bonding layer and protecting said insulation-treated projections; The process of exposing the layer to the outside.

好ましい実施例において、前記絶縁処理は、物理的絶縁または化学的絶縁が挙げられる。 In a preferred embodiment, the insulation treatment includes physical insulation or chemical insulation.

好ましい実施例において、前記物理的絶縁は、サンドブラスト法またはプラズマ法による絶縁が挙げられる。 In a preferred embodiment, the physical insulation includes sandblasting or plasma insulation.

好ましい実施例において、前記化学的絶縁は、エッチング法による絶縁が挙げられる。 In a preferred embodiment, the chemical insulation includes etching insulation.

好ましい実施例において、前記エッチング法は、化学溶液を使用してエッチングし、前記化学溶液が硝酸、王水、フッ化水素酸、硫酸、過酸化水素、過塩素酸、塩酸、塩化第二鉄、酢酸および硝酸セリウムアンモニウムの群から選択される1つ以上の成分を含む。 In a preferred embodiment, the etching method uses a chemical solution to etch, wherein the chemical solution includes nitric acid, aqua regia, hydrofluoric acid, sulfuric acid, hydrogen peroxide, perchloric acid, hydrochloric acid, ferric chloride, It contains one or more ingredients selected from the group of acetic acid and ceric ammonium nitrate.

好ましい実施例において、前記結合層は、電気めっき法またはろう付け法で形成される。 In a preferred embodiment, the bonding layer is formed by electroplating or brazing.

従来技術と比較して、本発明の研磨パッドドレッサーは、保護層と、保護層の外側に露出する研磨粒子の突起を備え、前記保護層がCMP加工過程で結合層の金属(例えばニッケル)が析出されることを防止できるため、汚染を防止でき、摩耗による損傷から結合層を保護し、研磨粒子を保持し、研磨粒子の脱落または位置ずれを防ぐことができ、かつ研磨粒子の突起が保護層の外側に露出するため、研磨パッドドレッサーの研磨効果および寿命を維持することができる。なお、本発明の研磨パッドドレッサーの製造方法において、前記研磨粒子の突起は絶縁処理を施した後で保護層を電着させ、前記絶縁処理が研磨粒子の突起を絶縁させ、その後の電着時に保護層を前記突起で覆わせないため、前記研磨パッドドレッサーの切削力を維持でき、かつ、電着で完成した保護層は厚みが薄く均一に分布するという利点を有し、結合層を保護するだけではなく、必要に応じて前記突起の高さを調整並びに維持できる。 Compared with the prior art, the polishing pad dresser of the present invention comprises a protective layer and protrusions of abrasive particles exposed outside the protective layer, wherein the protective layer prevents bonding layer metal (e.g., nickel) from being removed during the CMP process. It can prevent deposition, so it can prevent contamination, protect the bonding layer from wear damage, hold abrasive particles, prevent abrasive particles from falling off or shifting, and protect abrasive particle protrusions. Since it is exposed to the outside of the layer, the polishing effect and life of the polishing pad dresser can be maintained. In the method of manufacturing the polishing pad dresser of the present invention, the projections of the abrasive particles are subjected to an insulation treatment, and then a protective layer is electrodeposited. Since the protective layer is not covered with the protrusions, the cutting force of the polishing pad dresser can be maintained, and the protective layer completed by electrodeposition has the advantage of being thin and evenly distributed, thus protecting the bonding layer. In addition, the height of the projection can be adjusted and maintained as required.

本発明の研磨パッドドレッサーを示す模式図である。1 is a schematic diagram showing a polishing pad dresser of the present invention; FIG. 比較例の研磨パッドドレッサーの製造方法を示す模式図である。It is a schematic diagram which shows the manufacturing method of the polishing pad dresser of a comparative example. 本発明の研磨パッドドレッサーの製造方法を示す模式図である。It is a schematic diagram which shows the manufacturing method of the polishing pad dresser of this invention. 実施例および比較例1の研磨パッドドレッサーの研磨層表面の走査型電子顕微鏡(SEM)で撮影した写真である(図(a)は、比較例1の研磨パッドドレッサーの研磨層表面であり、図(b)が実施例の研磨パッドドレッサーの研磨層表面である。)2 is a photograph taken with a scanning electron microscope (SEM) of the surface of the polishing layer of the polishing pad dresser of Example and Comparative Example 1 (FIG. (a) is the surface of the polishing layer of the polishing pad dresser of Comparative Example 1; FIG. (b) is the polishing layer surface of the polishing pad dresser of the example.)

以下の実施形態は、本発明を過度に限定すると見なされるべきではない。本発明の属する技術分野における通常の知識を有する者は、本発明の精神または範囲から逸脱することなく、本明細書で論じられる実施例を修正および変化することができ、かかる修正や変化も本発明の範囲に網羅される。 The following embodiments should not be viewed as unduly limiting the invention. Persons of ordinary skill in the art to which this invention pertains can modify and vary the examples discussed herein without departing from the spirit or scope of the invention, and such modifications and variations may be incorporated herein. covered by the scope of the invention.

本明細書で使用される「1つ」および「1種」という用語は、その構成が1個または2個以上(すなわち、少なくとも1個)を示している。 As used herein, the terms "a" and "a" refer to one or more than one (ie, at least one) of the configurations.

図1に示すように、本発明の研磨パッドドレッサーは、基材1と、研磨層2と、保護層3と、を備える。前記研磨層2は、前記基材1の表面を覆い、結合層21と、前記結合層21に埋め込まれた複数の研磨粒子22と、を備え、各前記研磨粒子22が前記結合層21から露出し、絶縁処理を施した突起221を備える。前記保護層3は、前記結合層21の表面を覆い、前記突起221が前記保護層3の外に露出している。 As shown in FIG. 1, the polishing pad dresser of the present invention comprises a substrate 1, a polishing layer 2, and a protective layer 3. The abrasive layer 2 covers the surface of the substrate 1 and includes a bonding layer 21 and a plurality of abrasive particles 22 embedded in the bonding layer 21, each abrasive particle 22 being exposed from the bonding layer 21. and has a protrusion 221 that is insulated. The protective layer 3 covers the surface of the bonding layer 21 and the protrusions 221 are exposed outside the protective layer 3 .

図2は、比較例の研磨パッドドレッサーの製造方法を示す図であり、前記研磨粒子22を前記結合層21に埋め込んだ後、保護層3を前記研磨粒子22および前記結合層21の表面に塗布する。しかしながら、本発明者の実験を積み重ねた結果、研磨パッドドレッサーを製造する時、どのような結合方法(例えばろう付け法、電気めっき/電着法または焼結等)で前記研磨粒子22を前記結合層21に埋め込むと共に固定する場合でも、前記研磨粒子22の結合過程中にろう付け、電気めっきまたは焼結材料の残留物により、前記研磨粒子22が結合層21に固定された後、導電性を有するため、次の工程において、保護層3を塗布または電着法で前記結合層21に覆われる時、導電性を有する前記研磨粒子22が前記保護層3で覆われることで、前記保護層3の外側に露出できない。保護層3を有しない研磨パッドドレッサーと比較すると、保護層3を有する研磨パッドドレッサーの切削力は、研磨粒子22が保護層3で覆われることにより低下され、従って研磨パッドドレッサー全体の切削力を低下させ、かつ研磨粒子22を覆う前記保護層3が、前記研磨パッドドレッサーの研磨時容易に剥がれ(peeling)、不純物が生じて研磨パッド上に落ちることで、研磨品質に影響を及ぼす。 FIG. 2 is a diagram showing a manufacturing method of a polishing pad dresser of a comparative example. After embedding the abrasive particles 22 in the bonding layer 21, a protective layer 3 is applied on the surfaces of the abrasive particles 22 and the bonding layer 21. As shown in FIG. do. However, as a result of repeated experiments by the present inventors, when manufacturing a polishing pad dresser, any bonding method (such as brazing, electroplating/electrodeposition, or sintering) is used to bond the abrasive particles 22 together. Residues of brazing, electroplating or sintering material during the bonding process of the abrasive particles 22, even when embedded and fixed in the layer 21, render the abrasive particles 22 electrically conductive after they are fixed in the bonding layer 21. Therefore, in the next step, when the protective layer 3 is coated or covered with the bonding layer 21 by an electrodeposition method, the conductive abrasive particles 22 are covered with the protective layer 3 so that the protective layer 3 cannot be exposed outside the Compared with the polishing pad dresser without the protective layer 3, the cutting force of the polishing pad dresser with the protective layer 3 is reduced by covering the abrasive particles 22 with the protective layer 3, thus reducing the cutting force of the entire polishing pad dresser. The protective layer 3 which lowers and covers the abrasive particles 22 is easy to peel during the polishing of the polishing pad dresser, causing impurities to fall onto the polishing pad, affecting the polishing quality.

比較例の研磨パッドドレッサーの製造方法とは異なり、図3に示すように、本発明の研磨パッドドレッサーの製造方法は、工程(a)~(d)工程を含み、すなわち(a)基材1を用意する工程、(b)前記基材1の表面に結合層2と、前記結合層2に埋め込まれた複数の研磨粒子22と、を備え、各前記研磨粒子22が前記結合層21の上に露出した突起221を有する研磨層を形成する工程、(c)前記突起221の絶縁処理を施す工程(図4に示す絶縁処理は、例としてプラズマを使用し、プラズマノズル4で前記突起221に吹きつけて絶縁処理を施すが、本発明の絶縁処理がプラズマの使用に限定されない)、(d)保護層3を前記結合層21の表面に電着させ、かつ前記絶縁処理を施した突起221を保護層3の外側に露出させる工程。前記工程(c)は、前記突起221への絶縁処理を施したため、その表面が完全に絶縁済みで、その後の工程(d)で前記保護層3を電着する時、電着が溶液内の帯電した樹脂ベレットを電場作用下で反対側の帯電電極の表面に移動させ、前記突起221の表面は絶縁されるので、前記突起221の表面に前記保護層3を形成することができず、前記突起221が前記保護層3の外側に露出され、前記研磨粒子22に元の切削力を維持させることができ、かつ研磨時でも前記保護層3の剥がし(peeling)により不純物が発生する状況とならない。かつ、前記保護層3が前記結合層21を覆うと、前記結合層21の研磨時、摩擦による損傷から保護することで、前記結合層21が研磨粒子221をしっかりと保持し、前記研磨粒子221の脱落または位置ずれを防ぎ、ならびにCMP内の研磨スラリーが通常腐食性を有し、例えば酸腐食液であり、前記保護層3は結合層21を腐食液によって侵食されることによる金属(例えばニッケル)の析出から保護して汚染を防ぐことができる。 Unlike the manufacturing method of the polishing pad dresser of the comparative example, as shown in FIG. (b) comprising a bonding layer 2 on the surface of said substrate 1 and a plurality of abrasive particles 22 embedded in said bonding layer 2, each said abrasive particle 22 being on said bonding layer 21; (c) applying insulation treatment to the projections 221 (the insulation treatment shown in FIG. (d) Electrodepositing a protective layer 3 on the surface of the bonding layer 21 and applying the insulation treatment to the projections 221; is exposed to the outside of the protective layer 3. In the step (c), since the protrusions 221 were subjected to an insulation treatment, the surfaces of the protrusions 221 were completely insulated. The charged resin pellet is moved to the surface of the charging electrode on the opposite side under the action of an electric field, and the surface of the projection 221 is insulated, so that the protective layer 3 cannot be formed on the surface of the projection 221, and the The protrusions 221 are exposed outside the protective layer 3 so that the abrasive particles 22 can maintain the original cutting force, and the peeling of the protective layer 3 during polishing does not cause impurities. . In addition, when the protective layer 3 covers the bonding layer 21 , it protects the bonding layer 21 from damage caused by friction during polishing, so that the bonding layer 21 firmly holds the abrasive particles 221 and the abrasive particles 221 and the polishing slurry in CMP is usually corrosive, such as an acid etchant, and said protective layer 3 is a metal (eg, nickel ) deposition to prevent contamination.

試験を経たところ、本発明の研磨パッドドレッサーは、切削力(CRcompleted)を持ち、前記保護層3で覆われていない研磨パッドドレッサーの切削力(CRinitial)(すなわち、結合層21は保護層3で覆われていない)と比べると、切削力の変化率が下式に適合する。

Figure 0007281502000002
すなわち、前記切削力(CRcompleted)と前記保護層で覆われていない研磨パッドドレッサーの切削力(CRinitial)との変化率が10%未満である。本発明の研磨パッドドレッサーの製造方法で製造された研磨パッドドレッサーは、前記保護層3を前記結合層21に電着した後、前記研磨パッドドレッサーの切削力にほとんど影響を及ぼさない。本発明の研磨パッドドレッサーの切削力は、300μm/hr以上であり、好ましくは320μm/hr以上であり、より好ましくは330μm/hr以上であり;上記切削力は、一例であり、限定するものではなく、本発明の属する技術分野における通常の知識を有する者は、必要に応じて所望の研磨パッドドレッサーの切削力を調整して得ることができる。 Through tests, the polishing pad dresser of the present invention has a cutting force (CR completed ), and the cutting force (CR initial ) of the polishing pad dresser not covered with the protective layer 3 (that is, the bonding layer 21 does not have the protective layer 3), the rate of change of the cutting force fits the following equation.
Figure 0007281502000002
That is, the rate of change between the cutting force (CR completed ) and the cutting force (CR initial ) of the polishing pad dresser not covered with the protective layer is less than 10%. The polishing pad dresser manufactured by the manufacturing method of the polishing pad dresser of the present invention hardly affects the cutting force of the polishing pad dresser after the protective layer 3 is electrodeposited on the bonding layer 21 . The cutting force of the polishing pad dresser of the present invention is 300 μm/hr or more, preferably 320 μm/hr or more, more preferably 330 μm/hr or more; However, a person having ordinary knowledge in the technical field to which the present invention belongs can obtain a desired cutting force of the polishing pad dresser by adjusting it as necessary.

以下では、本発明の研磨パッドドレッサーを構築するために用いられる材料および製造方法を描写する。本明細書に開示される材料および技術は、単なる例示であり、かつ記載されていない他の材料および技術は本発明の範囲から逸脱することなく、使用することができる。 The following describes the materials and manufacturing methods used to construct the polishing pad dresser of the present invention. The materials and techniques disclosed herein are exemplary only, and other materials and techniques not described can be used without departing from the scope of the invention.

本発明の研磨パッドドレッサーにおいて、前記基材1は、ステンレス鋼、金属材料、プラスチック材料およびセラミック材料のうちの1つ以上で構成される。実際、前記基材1が研磨層2を載置できるだけでよく、材料は金属基板、金属合金基板、ステンレス鋼基板またはダイス鋼基板であり得ることが好ましい。具体的に、前記金属基板は、銅、鉄、アルミニウム、チタンまたはスズなどを含むが、これらに限定されず;金属合金基板は、鉄合金、銅合金、アルミニウム合金、チタン合金またはマグネシウム合金などを含むが、これらに限定されない。 In the polishing pad dresser of the present invention, the substrate 1 is made of one or more of stainless steel, metal material, plastic material and ceramic material. In fact, said substrate 1 only needs to be able to bear the polishing layer 2, and preferably the material can be a metal substrate, a metal alloy substrate, a stainless steel substrate or a die steel substrate. Specifically, the metal substrate includes, but is not limited to, copper, iron, aluminum, titanium or tin; the metal alloy substrate includes iron alloy, copper alloy, aluminum alloy, titanium alloy or magnesium alloy. Including but not limited to.

本発明の研磨パッドドレッサーにおいて、前記結合層21は、前記研磨粒子22の層間を載置するために用いられ、かつ前記基材1に付着され、前記研磨粒子22が主に前記結合層21に埋め込まれて固定される。前記結合層21は、様々なで形成でき、例えば樹脂有機接合法、電気めっき法、ろう付け法による電着であり、材料がろう付け材料、電気めっき材料、セラミック材料、金属材料または高分子材料を含み、かつ本発明がこれらに限定されない。具体的に、前記ろう付け材料、前記電気めっき材料または前記金属材料は、鉄、コバルト、ニッケル、クロム、マンガン、シリコン、アルミニウム、およびこれらの組み合わせからなる群から選択される少なくとも1つを含み;前記高分子材料は、エポキシ樹脂、ポリエステル樹脂、ポリアクリル樹脂またはフェノール樹脂を含み;前記セラミック材料は、各種金属酸化物、窒化物、炭化物、ホウ化物、ケイ化物またはそれらの組み合わせ(例えば炭化ケイ素、窒化ケイ素、窒化アルミニウム、アルミナ、炭化チタン、二ホウ化チタンまたは炭化ホウ素など)を含む。 In the polishing pad dresser of the present invention, the bonding layer 21 is used to place between the layers of the abrasive particles 22 and is attached to the substrate 1, and the abrasive particles 22 are mainly attached to the bonding layer 21. Embedded and fixed. The bonding layer 21 can be made of various materials, such as resin organic bonding method, electroplating method, electrodeposition by brazing method, and the material is brazing material, electroplating material, ceramic material, metal material or polymer material. and the invention is not limited thereto. Specifically, the brazing material, the electroplating material, or the metal material includes at least one selected from the group consisting of iron, cobalt, nickel, chromium, manganese, silicon, aluminum, and combinations thereof; Said polymeric materials include epoxy resins, polyester resins, polyacrylic resins or phenolic resins; said ceramic materials include various metal oxides, nitrides, carbides, borides, silicides or combinations thereof such as silicon carbide, silicon nitride, aluminum nitride, alumina, titanium carbide, titanium diboride or boron carbide).

本発明の研磨パッドドレッサーにおいて、前記研磨粒子22は、天然ダイヤモンド、合成ダイヤモンド、多結晶ダイヤモンド、立方晶窒化ホウ素、アルミナおよび炭化ケイ素の群から選択される1つ以上の研磨粒子22である。本明細書中で使用される場合「前記研磨粒子22の突起221」とは、前記研磨粒子22の上端の保護層3で覆われていない部分を意味し、その外形は角錐状、円錐状、円弧状、円柱状、刃物状または角柱状であり得るが、これに限定されない。 In the polishing pad dresser of the present invention, said abrasive particles 22 are one or more abrasive particles 22 selected from the group of natural diamond, synthetic diamond, polycrystalline diamond, cubic boron nitride, alumina and silicon carbide. As used herein, the “protrusion 221 of the abrasive particle 22” means the portion of the upper end of the abrasive particle 22 that is not covered with the protective layer 3, and has an outer shape of pyramid, cone, or the like. It may be arcuate, cylindrical, edged, or prismatic, but is not limited thereto.

本明細書中で使用される場合「前記突起221は絶縁処理を施している」とは、前記研磨粒子22が結合過程を経て前記結合層21に埋め込まれて固定され、研磨粒子22の突起221が結合プロセスでろう付け、電気めっきまたは焼結材料の残留物により、導電性を有するため、結合プロセスの後にさらに絶縁処理を施すことを意味し、前記絶縁処理は物理的絶縁または化学的絶縁が挙げられる。前記物理的絶縁は、サンドブラスト法またはプラズマ法による絶縁を含み、その原理がサンドブラストまたはプラズマを用い、突起221上の導電性物質をきれいに取り除くため、導電性を有しない。前記サンドブラスト法に使用されるサンドブラスト粒子の粒径は、約50~200μmであり、前記プラズマ法の温度が150~350℃程度である。前記化学的絶縁は、エッチング法による絶縁を含み、前記エッチング法が化学溶液でエッチングし、突起221上の導電性物質を化学溶液でエッチングした後で除去させ;前記化学溶液は、硝酸、王水、フッ化水素酸、硫酸、過酸化水素、過塩素酸、塩酸、塩化第二鉄、酢酸、硝酸セリウムアンモニウム、塩化カリウム、ヨウ化カリウム、過硫酸アンモニウム、塩化アンモニウムまたはこれらの組み合わせを含むが、これらに限定されない。前記化学溶液は、硝酸、王水、フッ化水素酸、硫酸、過酸化水素、過塩素酸、塩酸、塩化第二鉄、酢酸および硝酸セリウムアンモニウムの群から選択される1つ以上の成分を含むことが好ましい。上述の絶縁処理を施した後、前記突起221の表面は、絶縁されて帯電せず、その後の保護層3が前記突起221の表面に電着できないため、前記突起221が前記保護層3の外側に露出することができる。 As used herein, "the protrusions 221 are insulated" means that the abrasive particles 22 are embedded and fixed in the bonding layer 21 through a bonding process, and the protrusions 221 of the abrasive particles 22 are is electrically conductive due to the residue of brazing, electroplating or sintering materials in the bonding process, which means further insulation treatment after the bonding process, said insulation treatment being physical insulation or chemical insulation. mentioned. The physical insulation includes insulation by sandblasting or plasma, the principle of which is to use sandblasting or plasma to cleanly remove the conductive material on the protrusion 221, so that it has no conductivity. The sandblasting particles used in the sandblasting method have a particle size of about 50 to 200 μm, and the temperature of the plasma method is about 150 to 350°C. The chemical insulation includes insulation by an etching method, the etching method etching with a chemical solution, and removing the conductive material on the protrusion 221 after etching with the chemical solution; the chemical solution includes nitric acid and aqua regia. , hydrofluoric acid, sulfuric acid, hydrogen peroxide, perchloric acid, hydrochloric acid, ferric chloride, acetic acid, ceric ammonium nitrate, potassium chloride, potassium iodide, ammonium persulfate, ammonium chloride or combinations thereof, but these is not limited to Said chemical solution comprises one or more components selected from the group of nitric acid, aqua regia, hydrofluoric acid, sulfuric acid, hydrogen peroxide, perchloric acid, hydrochloric acid, ferric chloride, acetic acid and ceric ammonium nitrate. is preferred. After the above-described insulation treatment, the surface of the projection 221 is insulated and is not charged, and the protective layer 3 cannot be electrodeposited on the surface of the projection 221 thereafter. can be exposed to

本発明の研磨パッドドレッサーにおいて、前記保護層3は、好ましくは電着塗料組成物で形成され、電着が一種の表面処理であり、前記研磨パッドドレッサーを電着塗料組成物に浸漬され、前記研磨層2を電極間に配置すると共に電流が印加され、電気作用により電着塗料組成物が前記結合層21の表面に沈着されて均一な保護層3を形成する。その他の表面処理(例えばスプレコートやスピンコート)も採用できるが、電着塗装を使用すると均一で薄い保護層3を得ることができ;薄い保護層3は、前記研磨粒子22と前記保護層3との間にかなりの高さ距離を維持でき、前記研磨粒子22の切削力の維持に有利となる。前記保護層3の好ましい厚さは、10~30μmであるが限定されなく、かつ各位置の厚さの差は、好ましくは1.0~3.0μmに制御し、より好ましくは1.5μmである。前記電着塗料組成物は、主体樹脂を含み、前記主体樹脂がエポキシ樹脂、アクリル樹脂、ポリブタジエン樹脂、ポリエステル樹脂またはポリアミド樹脂である。具体的には、例えばアミン変性エポキシ樹脂(例えばジエチルトリアミンを含む変性エポキシ樹脂)、カルボキシル基およびヒドロキシル基を含むアクリル樹脂、またはエポキシ化ポリブタジエン樹脂等であるが、本発明はこれらに限定されない。 In the polishing pad dresser of the present invention, the protective layer 3 is preferably formed of an electrodeposition coating composition, electrodeposition is a kind of surface treatment, the polishing pad dresser is immersed in the electrodeposition coating composition, and the The polishing layer 2 is placed between the electrodes and an electric current is applied to deposit the electrodeposition coating composition on the surface of the bonding layer 21 by electrical action to form a uniform protective layer 3 . Although other surface treatments (such as spray coating and spin coating) can also be used, electrodeposition coating can be used to obtain a uniform and thin protective layer 3; , which is advantageous for maintaining the cutting force of the abrasive particles 22 . The thickness of the protective layer 3 is preferably 10 to 30 μm, but is not limited, and the thickness difference at each position is preferably controlled to 1.0 to 3.0 μm, more preferably 1.5 μm. be. The electrodeposition coating composition contains a main resin, and the main resin is an epoxy resin, an acrylic resin, a polybutadiene resin, a polyester resin, or a polyamide resin. Specific examples include amine-modified epoxy resins (for example, modified epoxy resins containing diethyltriamine), acrylic resins containing carboxyl groups and hydroxyl groups, and epoxidized polybutadiene resins, but the present invention is not limited thereto.

以下の実施例は、本発明の研磨パッドドレッサーの製造方法を提供する。実施例は、説明のみを目的としており、本発明を限定することを意図するものではないことに理解されたい。 The following examples provide methods of making the polishing pad dresser of the present invention. It should be understood that the examples are for illustrative purposes only and are not intended to limit the invention.

実施例-本発明の突起が絶縁処理を施した研磨パッドドレッサー
溶融したニッケルクロム合金およびダイヤモンド粒子でステンレス鋼の表面に研磨層を形成し、溶融したニッケルクロム合金を表面張力によって各ダイヤモンド粒子の斜め側面の一部に覆われ、前記ダイヤモンド粒子を埋め込んで支持し、固定する。プラズマ法で各ダイヤモンド粒子の突起の絶縁処理を施して、前記突起の表面を絶縁させる。最後に、エポキシ樹脂(米インダストリーズ社(PPG)製)を結合層の表面に電着して、保護層を形成させ、本発明の研磨パッドドレッサーを得た。
Example - Polishing Pad Dresser with Insulated Protrusions of the Present Invention A polishing layer was formed on the surface of stainless steel with molten nickel-chromium alloy and diamond particles, and the molten nickel-chromium alloy was applied to each diamond particle by surface tension. Part of the side surface is covered, and the diamond grains are embedded, supported, and fixed. An insulation treatment is applied to the protrusions of each diamond particle by plasma method to insulate the surface of the protrusions. Finally, an epoxy resin (manufactured by US Industries, Inc. (PPG)) was electrodeposited on the surface of the bonding layer to form a protective layer to obtain the polishing pad dresser of the present invention.

比較例1-突起が絶縁処理を施していない研磨パッドドレッサー
比較例1の研磨パッドドレッサーの製造方法は、実施例と同じで、その相違点は比較例1が各ダイヤモンド粒子の突起に対し絶縁処理を施していないことである。
Comparative Example 1 - Polishing Pad Dresser with No Insulation Treatment for Protrusions The manufacturing method of the polishing pad dresser of Comparative Example 1 is the same as that of the Example, and the difference is that Comparative Example 1 performs insulation treatment on the protrusions of each diamond particle. is not applied.

試験1.切削力
実施例および比較例1の研磨パッドドレッサーの切削力をそれぞれ試験し、下式を通じて切削力の変化率を計算した。

Figure 0007281502000003
結果は、下表1に示す。
Figure 0007281502000004
Test 1. Cutting Force The cutting forces of the polishing pad dressers of Example and Comparative Example 1 were tested, and the rate of change in cutting force was calculated using the following formula.
Figure 0007281502000003
The results are shown in Table 1 below.
Figure 0007281502000004

表1に示すように、実施例の研磨パッドドレッサーの結合層を保護層で覆った後の切削力の変化率は、10%未満であり、これは保護層で覆われたとしても実施例の研磨パッドドレッサーの切削力が低下しないことを示す。対照的に、比較例1の研磨パッドドレッサーの研磨層を保護層で覆った後の切削力の変化率は、10%を超え、318μm/hrから202μm/hrに低下した。実施例および比較例1の相違点は、保護層が前記ダイヤモンド粒子の突起を覆っているかどうかである。比較例1から分かるように、保護層が前記突起を覆った場合、研磨パッドドレッサーの切削力が大幅に低下された。 As shown in Table 1, the rate of change in cutting force after covering the bonding layer of the polishing pad dresser of the example with the protective layer was less than 10%, which is less than that of the example even when covered with the protective layer. It shows that the cutting force of the polishing pad dresser does not decrease. In contrast, after the polishing layer of the polishing pad dresser of Comparative Example 1 was covered with the protective layer, the rate of change in cutting force exceeded 10% and decreased from 318 μm/hr to 202 μm/hr. The difference between Example and Comparative Example 1 is whether or not the protective layer covers the projections of the diamond grains. As can be seen from Comparative Example 1, when the protective layer covered the protrusions, the cutting force of the polishing pad dresser was significantly reduced.

試験2.走査型電子顕微鏡(SEM)による研磨パッドドレッサーの研磨層表面の撮影
走査型電子顕微鏡(SEM)で実施例および比較例1の研磨パッドドレッサーの研磨層表面を撮影した結果を図4に示す。図4(a)は、比較例1の研磨パッドドレッサーの研磨層表面であり、図4(b)は実施例の研磨パッドドレッサーの研磨層表面である。図4(b)に示すように、実施例の研磨パッドドレッサーの研磨粒子の突起は、絶縁処理を施したことにより、保護層を表面に電着させることができないため、鋭利な刃先を持つ。対照的に、図4(a)に示すように、比較例1の研磨パッドドレッサーの研磨粒子の突起は、絶縁処理を施しておらず、保護層が表面に電着されているため、刃先が鈍いため鋭利な刃先を持っていない。
Test 2. Imaging of Surface of Polishing Layer of Polishing Pad Dresser with Scanning Electron Microscope (SEM) FIG. 4A shows the polishing layer surface of the polishing pad dresser of Comparative Example 1, and FIG. 4B shows the polishing layer surface of the polishing pad dresser of Example. As shown in FIG. 4(b), the projections of the abrasive particles of the polishing pad dresser of Example have sharp cutting edges because the protective layer cannot be electrodeposited on the surface due to the insulation treatment. In contrast, as shown in FIG. 4(a), the protrusions of the abrasive particles of the polishing pad dresser of Comparative Example 1 were not insulated, and the protective layer was electrodeposited on the surface. It is dull and does not have a sharp cutting edge.

比較例2.保護層のない研磨パッドドレッサー
溶融したニッケルクロム合金およびダイヤモンド粒子でステンレス鋼の表面に研磨層を形成し、溶融したニッケルクロム合金を表面張力によって各ダイヤモンド粒子の斜め側面の一部に覆われ、前記ダイヤモンド粒子を埋め込んで支持し、固定すると、保護層のない研磨パッドドレッサーを得た。
Comparative example 2. Polishing pad dresser without protective layer A polishing layer is formed on the surface of stainless steel with molten nickel-chromium alloy and diamond particles, and the molten nickel-chromium alloy is covered by a part of the oblique side of each diamond particle by surface tension, said A polishing pad dresser without a protective layer was obtained when diamond particles were embedded, supported and fixed.

試験3.金属析出の比較
実施例および比較例2の研磨パッドドレッサーをそれぞれ3%硝酸溶液に浸漬し、浸漬後の3%硝酸溶液中の金属量を24時間後にテストし、その結果を下表2に示す。

Figure 0007281502000005
Test 3. Comparison of Metal Deposition The polishing pad dressers of Example and Comparative Example 2 were each immersed in a 3% nitric acid solution, and the amount of metal in the 3% nitric acid solution after immersion was tested 24 hours later. The results are shown in Table 2 below. .
Figure 0007281502000005

表2に示すように、3%硝酸溶液の原液には、低濃度のクロム、鉄、ニッケルおよびコバルトを含有し、実施例の研磨パッドドレッサーが浸泡された後、クロム、鉄、ニッケルおよびコバルトの析出があったが、濃度が高くない。対照的に、比較例2の研磨パッドドレッサーは、保護層がないため、クロム、鉄、ニッケルおよびコバルトの析出濃度が非常に高かった。 As shown in Table 2, the stock 3% nitric acid solution contained low concentrations of chromium, iron, nickel, and cobalt, and after the polishing pad dresser of the example was soaked, the chromium, iron, nickel, and cobalt concentrations were low. There was precipitation, but the concentration was not high. In contrast, the polishing pad dresser of Comparative Example 2 had very high deposition concentrations of chromium, iron, nickel and cobalt due to the absence of the protective layer.

上記具体的実施例の突起が絶縁処理を施したことで製造された研磨パッドドレッサーは、ダイヤモンド粒子の突起が保護層で覆われてないため、切削力を維持できて、研磨効果が下がることがなく、研磨パッドドレッサーの研磨力を維持できる。ならびに、研磨パッドドレッサーの結合層を保護層で覆った場合、結合層の金属が析出されないように保護することができる。 In the polishing pad dresser manufactured by subjecting the projections of the above specific examples to insulation treatment, since the projections of the diamond particles are not covered with a protective layer, the cutting force can be maintained and the polishing effect may be reduced. It is possible to maintain the polishing power of the polishing pad dresser. Also, if the bonding layer of the polishing pad dresser is covered with a protective layer, the bonding layer metal can be protected from deposition.

上記をまとめて、本発明の研磨パッドドレッサーは、保護層を有し、前記保護層がCMP加工過程で結合層の金属(例えばニッケル)が析出されることを防止できるため、汚染を防止でき、摩耗による損傷から結合層を保護し、研磨粒子を保持し、研磨粒子の脱落または位置ずれを防ぐことができ、かつ研磨パッドドレッサーの研磨時保護層が剥がれ(peeling)、不純物が生じて研磨パッド上に落ちる状況とならないため、研磨パッドドレッサーの研磨効果および寿命を維持することができる。なお、なお、本発明の研磨パッドドレッサーの製造方法において絶縁処理および電着を使用し、前記絶縁処理が研磨粒子の突起を絶縁させ、その後の電着時に保護層を前記突起で覆わせないため、電着で完成した保護層は厚みが薄く均一に分布するという利点を有し、前記突起の高さを維持でき、すなわち前記研磨パッドドレッサーの切削力を維持できる。よって、本発明の研磨パッドドレッサーは、CMPの使用に適し、産業上の利用可能性を有する。 In summary, the polishing pad dresser of the present invention has a protective layer, and the protective layer can prevent the deposition of the metal (eg, nickel) of the bonding layer during the CMP process, thus preventing contamination. It can protect the bonding layer from damage due to abrasion, hold the abrasive particles, prevent the shedding or displacement of the abrasive particles, and peeling of the protective layer during polishing of the polishing pad dresser, causing impurities to damage the polishing pad. Since there is no falling situation, the polishing effect and life of the polishing pad dresser can be maintained. It should be noted that, in the manufacturing method of the polishing pad dresser of the present invention, an insulation treatment and electrodeposition are used, and the insulation treatment insulates the projections of the abrasive particles so that the protective layer is not covered with the projections during subsequent electrodeposition. The protective layer completed by electrodeposition has the advantage of being thin and evenly distributed, so that the height of the protrusions can be maintained, ie the cutting force of the polishing pad dresser can be maintained. Therefore, the polishing pad dresser of the present invention is suitable for use in CMP and has industrial applicability.

以上で本発明を詳細に説明したが、上に述べたのは、本発明の好ましい実施例に過ぎず、本発明の実施範囲がこれによって限定され得ない、すなわち本発明の特許請求の範囲に基づいて行われる均等範囲内での変化および潤飾は、本発明の保護範囲に網羅される。 Although the present invention has been described in detail above, the above descriptions are only preferred embodiments of the present invention, and the scope of implementation of the present invention cannot be limited thereby, i.e., the scope of the claims of the present invention. Variations and embellishments made on the basis within the equivalent range are covered by the protection scope of the present invention.

1 基材
2 研磨層
21 結合層
22 研磨粒子
221 突起
3 保護層
4 プラズマノズル
REFERENCE SIGNS LIST 1 substrate 2 abrasive layer 21 bonding layer 22 abrasive particles 221 projections 3 protective layer 4 plasma nozzle

Claims (7)

以下の工程
(a)基材を用意する工程、
(b)前記基材の表面に結合層と、前記結合層に埋め込まれた複数の絶縁体である研磨粒子と、を備え、各前記研磨粒子が前記結合層の上に露出した突起を有する研磨層を形成する工程、
(c)全ての前記突起それぞれに物理的絶縁処理を施す工程、
(d)保護層を前記結合層の表面に電着させ、かつ前記物理的絶縁処理を施した突起を保護層の外側に露出させる工程、を含み、
前記物理的絶縁処理は、前記研磨層を形成する工程において生じる導電性残留物を除去する処理であり、
前記物理的絶縁処理は、サンドブラスト法またはプラズマ法による絶縁処理を含む、研磨パッドドレッサーの製造方法。
The steps of (a) providing a substrate,
(b) polishing comprising a bonding layer on the surface of the substrate and a plurality of insulating abrasive particles embedded in the bonding layer, each abrasive particle having a protrusion exposed above the bonding layer; forming a layer;
(c) applying a physical insulation treatment to each of all said projections;
(d) electrodepositing a protective layer on the surface of the bonding layer and exposing the physically insulated protrusions outside the protective layer;
The physical insulation treatment is a treatment for removing conductive residues generated in the step of forming the polishing layer,
The method for manufacturing a polishing pad dresser, wherein the physical insulation treatment includes insulation treatment by a sandblast method or a plasma method.
前記結合層は、電気めっき法またはろう付け法で形成される請求項1に記載の製造方法。 The manufacturing method according to claim 1, wherein the bonding layer is formed by an electroplating method or a brazing method. 請求項1又は2に記載の製造方法により得られ、
基材と、
前記基材の表面を覆い、結合層と、前記結合層に埋め込まれた複数の絶縁体である研磨粒子と、を備え、各前記研磨粒子が前記結合層から露出し、研磨層を形成する工程において生じる導電性残留物を除去するための、サンドブラスト法またはプラズマ法による絶縁処理を含む物理的絶縁処理が、全ての突起それぞれにされ前記突起を備えた研磨層と、
前記結合層の表面を覆い、前記突起が保護層の外側に露出している保護層と、
を備え、
切削力(CRcompleted)を持ち、前記保護層で覆われていない研磨パッドドレッサーの切削力(CRinitial)と比較すると、前記切削力(CRcompleted)と前記保護層で覆われていない研磨パッドドレッサーの切削力(CRinitial)との変化率は、10%未満である研磨パッドドレッサー。
Obtained by the production method according to claim 1 or 2,
a substrate;
covering the surface of the substrate and comprising a bonding layer and a plurality of insulating abrasive particles embedded in the bonding layer, each abrasive particle being exposed from the bonding layer to form an abrasive layer; a polishing layer provided with said projections , each of which undergoes a physical insulation treatment, including a sandblasting or plasma insulation treatment, to remove the conductive residue produced in the
a protective layer covering the surface of the bonding layer and having the projections exposed outside the protective layer;
with
The cutting force (CR completed ) and the polishing pad dresser not covered with the protective layer are compared with the cutting force (CR initial ) of the polishing pad dresser not covered with the protective layer, which has the cutting force (CR completed ). with the cutting force (CR initial ) of less than 10%.
前記保護層は、電着塗料組成物から形成され、前記電着塗料組成物は主体樹脂を含み、前記主体樹脂がエポキシ樹脂、アクリル樹脂、ポリブタジエン樹脂、ポリエステル樹脂またはポリアミド樹脂である請求項3に記載の研磨パッドドレッサー。 4. According to claim 3, wherein the protective layer is formed from an electrodeposition coating composition, and the electrodeposition coating composition contains a main resin, and the main resin is an epoxy resin, an acrylic resin, a polybutadiene resin, a polyester resin, or a polyamide resin. Polishing pad dresser as described. 前記基材は、金属基板、金属合金基板、ステンレス鋼基板またはダイス鋼基板である請求項3又は4に記載の研磨パッドドレッサー。 5. The polishing pad dresser according to claim 3 or 4, wherein said substrate is a metal substrate, a metal alloy substrate, a stainless steel substrate or a die steel substrate. 前記結合層は、ろう付け材料、電気めっき材料、セラミック材料、金属材料または高分子材料である請求項3~5のいずれかに記載の研磨パッドドレッサー。 The polishing pad dresser according to any one of claims 3 to 5, wherein the bonding layer is brazing material, electroplating material, ceramic material, metallic material or polymeric material. 前記研磨粒子は、天然ダイヤモンド、合成ダイヤモンド、多結晶ダイヤモンド、立方晶窒化ホウ素、アルミナおよび炭化ケイ素の群から選択される1つ以上の研磨粒子である請求項3~6のいずれかに記載の研磨パッドドレッサー。
The abrasive according to any one of claims 3 to 6, wherein said abrasive particles are one or more abrasive particles selected from the group of natural diamond, synthetic diamond, polycrystalline diamond, cubic boron nitride, alumina and silicon carbide. pad dresser.
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