TWI753605B - Pad conditioner and manufacturing method thereof - Google Patents
Pad conditioner and manufacturing method thereof Download PDFInfo
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- TWI753605B TWI753605B TW109135518A TW109135518A TWI753605B TW I753605 B TWI753605 B TW I753605B TW 109135518 A TW109135518 A TW 109135518A TW 109135518 A TW109135518 A TW 109135518A TW I753605 B TWI753605 B TW I753605B
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- layer
- polishing pad
- pad conditioner
- bonding layer
- protective layer
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/001—Devices or means for dressing or conditioning abrasive surfaces involving the use of electric current
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0018—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for by electrolytic deposition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0054—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for by impressing abrasive powder in a matrix
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0072—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using adhesives for bonding abrasive particles or grinding elements to a support, e.g. by gluing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/009—Tools not otherwise provided for
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/001—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as supporting member
- B24D3/002—Flexible supporting members, e.g. paper, woven, plastic materials
- B24D3/004—Flexible supporting members, e.g. paper, woven, plastic materials with special coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
- B24D3/346—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties utilised during polishing, or grinding operation
Abstract
Description
本發明係關於一種拋光墊修整器及其製造方法,該拋光墊修整器特別係用於化學機械研磨(CMP)。 The present invention relates to a polishing pad conditioner, particularly for chemical mechanical polishing (CMP), and a method of making the same.
化學機械研磨(CMP)為半導體製程很重要的一道程序,除了製作出適宜大小尺寸的晶圓,CMP可使晶圓表面平坦化以進行後續製作積體電路。CMP會使用研磨漿液及拋光墊,研磨漿液的液體具有腐蝕性,而其中的粒子可充滿於拋光墊的微細溝槽經固定後,於拋光墊旋轉時提供機械摩擦力研磨晶圓,降低晶圓表面的粗糙度並達到拋光效果。 Chemical Mechanical Polishing (CMP) is an important process in semiconductor manufacturing. In addition to producing wafers of suitable size, CMP can flatten the wafer surface for subsequent fabrication of integrated circuits. CMP uses a polishing slurry and a polishing pad. The liquid of the polishing slurry is corrosive, and the particles in it can fill the fine grooves of the polishing pad. After being fixed, it provides mechanical friction to grind the wafer when the polishing pad rotates, reducing the Surface roughness and achieve polishing effect.
然而,一段時間使用下,拋光墊上會累積碎屑及硬化的研磨漿液,導致表面「釉化(glazing)」或硬化,即微細溝槽會被填滿硬化的研磨漿液,而無法固持新填充的研磨漿液的中粒子,進而降低研磨效果。此外,當拋光墊表面的研磨漿液硬化到一定程度時會有凸出部,於研磨時會破壞晶圓表面的整體粗糙度,無法達到晶圓平坦化效果。因此,拋光墊需使用拋光墊修整器(或稱拋光墊調整器、鑽石碟)固定修整,移除表面累積物以恢復拋光墊原始的作業表面,延長拋光墊使用壽命並減少替換成本。 However, after a period of use, debris and hardened slurry will accumulate on the polishing pad, resulting in "glazing" or hardening of the surface, that is, the micro-grooves will be filled with hardened slurry and cannot hold the newly filled slurry. Grind the medium particles of the slurry, thereby reducing the grinding effect. In addition, when the polishing slurry on the surface of the polishing pad is hardened to a certain extent, there will be protrusions, which will destroy the overall roughness of the wafer surface during polishing, and cannot achieve the effect of wafer planarization. Therefore, polishing pads need to be fixed and trimmed with polishing pad conditioners (or polishing pad conditioners, diamond discs) to remove surface accumulations to restore the original working surface of the polishing pads, prolong the service life of the polishing pads and reduce replacement costs.
然而,拋光墊修整器進行研磨的工作表面承載有研磨顆粒,長時間研磨下,該工作表面會因磨損而無法固持研磨顆粒,使研磨顆粒脫落及異位。脫落的研磨顆粒殘留在拋光墊上會刮傷晶圓,異位的研磨顆粒會使拋光墊修整不均,進而影響CMP製程。因此,如何保護拋光墊修整器表面不受到損耗,並維持研磨顆粒的品質,即為拋光墊修整器之技術所欲解決的問題。 However, the working surface of the polishing pad dresser for grinding carries abrasive particles. During long-term grinding, the working surface cannot hold the abrasive particles due to wear and tear, causing the abrasive particles to fall off and dislocate. The detached abrasive particles remaining on the polishing pad will scratch the wafer, and the ectopic abrasive particles will cause uneven trimming of the polishing pad, thereby affecting the CMP process. Therefore, how to protect the surface of the polishing pad conditioner from wear and maintain the quality of the abrasive particles is the problem to be solved by the polishing pad conditioner technology.
有鑑於上述問題,本發明之目的為提供一種拋光墊修整器,其包含一基材、一研磨層及一保護層。該研磨層覆蓋於該基材表面,該研磨層包含一結合層及複數個嵌入在該結合層之研磨顆粒,每一該研磨顆粒具有一突出部暴露出該結合層,且該突出部係經絕緣處理。該保護層覆蓋於該結合層表面,該突出部係暴露在該保護層之外。 In view of the above problems, an object of the present invention is to provide a polishing pad conditioner, which includes a substrate, an abrasive layer and a protective layer. The abrasive layer covers the surface of the substrate, the abrasive layer includes a bonding layer and a plurality of abrasive particles embedded in the bonding layer, each of the abrasive particles has a protruding portion exposing the bonding layer, and the protruding portion is Insulation treatment. The protective layer covers the surface of the bonding layer, and the protruding portion is exposed outside the protective layer.
於較佳實施例中,該保護層係電沉積塗料組合物所形成;其中,該電沉積塗料組合物包含一主體樹脂,該主體樹脂為環氧樹脂、丙烯酸樹脂、聚丁二烯樹脂、聚酯樹脂或聚醯胺樹脂。 In a preferred embodiment, the protective layer is formed by an electrodeposition coating composition; wherein, the electrodeposition coating composition comprises a host resin, and the host resin is epoxy resin, acrylic resin, polybutadiene resin, polybutadiene resin, etc. ester resin or polyamide resin.
於較佳實施例中,該基材為金屬基板、金屬合金基板、不鏽鋼基板或模具鋼基板。 In a preferred embodiment, the substrate is a metal substrate, a metal alloy substrate, a stainless steel substrate or a die steel substrate.
於較佳實施例中,該結合層為硬焊材料、電鍍材料、陶瓷材料、金屬材料或高分子材料。 In a preferred embodiment, the bonding layer is a brazing material, an electroplating material, a ceramic material, a metal material or a polymer material.
於較佳實施例中,該研磨顆粒係一或一者以上選自下列群組之研磨顆粒:天然鑽石、人造鑽石、多晶鑽石、立方氮化硼、氧化鋁及碳化矽。 In a preferred embodiment, the abrasive particles are one or more abrasive particles selected from the group consisting of natural diamonds, synthetic diamonds, polycrystalline diamonds, cubic boron nitride, alumina, and silicon carbide.
於較佳實施例中,該拋光墊修整器,其具有一切削力(CRcompleted),相較於尚未覆蓋有保護層之拋光墊修整器之切削力(CRinitial),符合以下公式: In a preferred embodiment, the polishing pad conditioner has a cutting force (CR completed ), which is compared with the cutting force (CR initial ) of the polishing pad conditioner that has not been covered with a protective layer, and conforms to the following formula:
,即該切削力(CRcompleted)與尚未覆蓋 有該保護層之拋光墊修整器之切削力(CRinitial)的變化率小於10%。 , that is, the rate of change between the cutting force (CR completed ) and the cutting force (CR initial ) of the pad dresser not covered with the protective layer is less than 10%.
本發明之另一目的為提供一種拋光墊修整器之製造方法,其步驟包含:(a)提供一基材;(b)形成一研磨層於該基材表面,該研磨層包含一結合層及複數個嵌入在該結合層之研磨顆粒,每一該研磨顆粒具有一突出部暴露於該結合層上方;(c)絕緣處理該突出部;及(d)電沉積一保護層至該結合層表面,且該經絕緣處理之突出部露出於保護層外。 Another object of the present invention is to provide a method for manufacturing a polishing pad conditioner, the steps of which include: (a) providing a substrate; (b) forming a polishing layer on the surface of the substrate, the polishing layer comprising a bonding layer and a plurality of abrasive particles embedded in the bonding layer, each of the abrasive particles having a protrusion exposed above the bonding layer; (c) insulating the protrusion; and (d) electrodepositing a protective layer on the surface of the bonding layer , and the insulating-treated protrusion is exposed outside the protective layer.
於較佳實施例中,該絕緣處理包含以物理方式或化學方式絕緣。 In a preferred embodiment, the insulation treatment includes physical or chemical insulation.
於較佳實施例中,該物理方式絕緣包含以噴砂法或電漿法絕緣。 In a preferred embodiment, the physical insulation includes sandblasting or plasma insulation.
於較佳實施例中,其中該化學方式絕緣包含以蝕刻法絕緣。 In a preferred embodiment, wherein the chemical insulation comprises etching insulation.
於較佳實施例中,該蝕刻法係以化學溶液蝕刻,該化學溶液包含一或一者以上選自下列群組之成分:硝酸、王水、氫氟酸、硫酸、過氧化氫、過氯酸、鹽酸、氯化鐵、醋酸及硝酸銨鈰。 In a preferred embodiment, the etching method is etching with a chemical solution comprising one or more components selected from the group consisting of: nitric acid, aqua regia, hydrofluoric acid, sulfuric acid, hydrogen peroxide, perchloric acid Acid, hydrochloric acid, ferric chloride, acetic acid and cerium ammonium nitrate.
於較佳實施例中,該結合層係以電鍍法或硬焊法形成。 In a preferred embodiment, the bonding layer is formed by electroplating or brazing.
相較於習知技術,本發明之拋光墊修整器具有保護層及暴露在保護層之外的研磨顆粒突出部,該保護層可防止CMP加工過程中,結合層的金屬(例如鎳)被析出而防止汙染,並能保護結合層不受到磨損破壞而固持研磨顆粒,避免研磨顆粒脫落或異位,且因研磨顆粒突出部暴露在保護層之外,故而能維持拋光墊修整器的研磨效果及使用壽命。另外,本發明之拋光墊修整器之製造方法中,在該研磨顆粒之突出部使用絕緣處理後才進行電沉積保護層,該絕緣處理可使研磨顆粒的突出部絕緣,使後續電沉積時保護層不會覆蓋該突出部,因而可維 持該拋光墊修整器的切削力,更且,使用電沉積所完成的保護層具有厚度薄及分布均勻之優勢,除可保護結合層還能視需要調整並維持該突出部的高度。 Compared with the prior art, the polishing pad conditioner of the present invention has a protective layer and abrasive particle protrusions exposed outside the protective layer, and the protective layer can prevent the metal (such as nickel) of the bonding layer from being precipitated during the CMP process It can prevent pollution, and can protect the bonding layer from being damaged by wear and hold the abrasive particles, avoid the abrasive particles falling off or out of place, and because the protruding parts of the abrasive particles are exposed outside the protective layer, the polishing effect of the polishing pad dresser can be maintained. service life. In addition, in the manufacturing method of the polishing pad dresser of the present invention, the protective layer is electrodeposited only after the protruding parts of the abrasive particles are subjected to insulation treatment. layer does not cover the protrusion, thus maintaining The cutting force of the polishing pad dresser is maintained, and the protective layer completed by electrodeposition has the advantages of thin thickness and uniform distribution. Besides protecting the bonding layer, the height of the protrusion can be adjusted and maintained as required.
1:基材 1: Substrate
2:研磨層 2: abrasive layer
21:結合層 21: Bonding layer
22:研磨顆粒 22: Abrasive particles
221:突出部 221: Protrusion
3:保護層 3: protective layer
4:電漿噴頭 4: Plasma nozzle
圖1為本發明之拋光墊修整器。 FIG. 1 is a polishing pad conditioner of the present invention.
圖2為比較例拋光墊修整器之製造方法。 FIG. 2 is a manufacturing method of a polishing pad conditioner of a comparative example.
圖3為本發明之拋光墊修整器之製造方法。 FIG. 3 is a manufacturing method of the polishing pad conditioner of the present invention.
圖4為實施例及比較例1拋光墊修整器的研磨層表面的掃描電子顯微鏡(SEM)照攝圖;(a)為比較例1拋光墊修整器的研磨層表面,(b)為實施例拋光墊修整器的研磨層表面。 4 is a scanning electron microscope (SEM) photograph of the surface of the polishing layer of the polishing pad conditioner of Example and Comparative Example 1; (a) is the surface of the polishing layer of the polishing pad conditioner of Comparative Example 1, (b) is an embodiment The abrasive layer surface of the pad conditioner.
以下實施方式不應視為過度地限制本發明。本發明所屬技術領域中具有通常知識者可在不背離本發明之精神或範疇的情況下對本文所討論之實施例進行修改及變化,而仍屬於本發明之範圍。 The following embodiments should not be construed to unduly limit the invention. Modifications and variations of the embodiments discussed herein can be made by those of ordinary skill in the art to which this invention pertains without departing from the spirit or scope of the invention, and still fall within the scope of the invention.
本文中術語「一」及「一種」代表於本文中之語法對象有一個或多於一個(即至少一個)。 The terms "a" and "an" herein refer to one or more than one (ie, at least one) of the grammatical objects herein.
如圖1所示,本發明之拋光墊修整器包含一基材1、一研磨層2及一保護層3。該研磨層2覆蓋於該基材1表面,該研磨層2包含一結合層21及複數個嵌入在該結合層21之研磨顆粒22,每一該研磨顆粒22具有一突出部221暴露出該結合層21,且該突出部221係經絕緣處理。該保護層3覆蓋於該結合層21表面,該突出部221係暴露在該保護層3之外。
As shown in FIG. 1 , the polishing pad conditioner of the present invention includes a
圖2係提供一比較例之拋光墊修整器製造方法,其係將該研磨顆粒22鑲嵌於該結合層21後,塗佈一保護層3於該研磨顆粒22及該結合層21的表面。然而,經發明人多方實驗後發現,拋光墊修整器於製造時,無論使用何種結合方式(例如,硬焊法、電鍍/電沉積法或燒結等等)將該研磨顆粒22鑲嵌並固定於該結合層21時,該研磨顆粒22在結合過程中受到硬焊、電鍍或燒結材料的殘留,故而該研磨顆粒22於固定在結合層21後便具有導電性,因此,下一步驟將保護層3無論是以塗佈或電沉積法覆於該結合層21時,該研磨顆粒22因具備導電性而被該保護層3包覆致使其無法露出於該保護層3之外,相較於不具保護層3的拋光墊修整器,具保護層3的拋光墊修整器其切削力因為研磨顆粒22受保護層3包覆而下降,從而降低拋光墊修整器整體的切削力,更且,該覆蓋於研磨顆粒22上的保護層3,易在該拋光墊修整器研磨時剝落(peeling)而產生雜質掉落在拋光墊上,影響研磨品質。
FIG. 2 provides a comparative example of a manufacturing method of a polishing pad dresser. After embedding the
不同於比較例拋光墊修整器之製造方法,如圖3所示,本發明之拋光墊修整器之製造方法,其步驟包含:(a)提供一基材1;(b)形成一研磨層2於該基材1表面,該研磨層2包含一結合層21及複數個嵌入在該結合層21之研磨顆粒22,每一該研磨顆粒22具有一突出部221暴露於該結合層21上方;(c)絕緣處理該突出部221(圖4所示的絕緣處理係以電漿為例,以電漿噴頭4噴塗該突出部221進行絕緣處理,然而,本發明之絕緣處理並不限於使用電漿);及(d)電沉積一保護層3至該結合層21表面,且該經絕緣處理之突出部221露出於保護層3外。由於該步驟(c)絕緣處理該突出部221,其表面已完全絕緣,後續該步驟(d)電沉積該保護層3時,由於電沉積係將溶液中的帶電樹脂膠粒在電場作用下遷移到相反的帶電電極的表面上,而該突出部221表面已絕緣,因此該保護層3無法形成於該突出
部221表面,該突出部221即會暴露在該保護層3之外,使該研磨顆粒22能維持原有的切削力,且研磨時也不會有該保護層3剝落(peeling)而產生雜質的情形。更且,由於具有該保護層3覆蓋該結合層21,即可保護該結合層21在研磨時不會因摩擦受損,使該結合層21能牢固地固持研磨顆粒221,避免該研磨顆粒221脫落或異位,以及,由於CMP中的研磨漿液通常會具有腐蝕性,例如酸腐蝕液,該保護層3即可保護結合層21不會受到腐蝕液侵蝕而析出金屬(例如鎳),防止汙染。
Different from the manufacturing method of the polishing pad conditioner of the comparative example, as shown in FIG. 3 , the manufacturing method of the polishing pad conditioner of the present invention includes the following steps: (a) providing a
經測試,本發明之拋光墊修整器具有一切削力(CRcompleted),相較於尚未覆蓋有該保護層3之拋光墊修整器之切削力(CRinitial)(即結合層21尚未覆蓋有保護層3),其切削力的變化率符合以下公式:
,即該切削力(CRcompleted)與尚未覆蓋
有該保護層之拋光墊修整器之切削力(CRinitial)的變化率小於10%。利用本發明之拋光墊修整器之製造方法所製得的拋光墊修整器,在電沉積該保護層3於該結合層21後,對該拋光墊修整器的切削力影響小。本發明之拋光墊修整器的切削力為300μm/hr以上,較佳為320μm/hr以上,更佳為330μm/hr以上;上述之切削力僅為例式而非限制性,本發明領域中具有通常知識者可依照需求,調整並獲得所需的拋光墊修整器的切削力。
After testing, the polishing pad conditioner of the present invention has a cutting force (CR completed ), which is compared with the cutting force (CR initial ) of the polishing pad conditioner that has not been covered with the protective layer 3 (ie, the
下方將描述可用於建構本發明之拋光墊修整器的材料及製法,應注意,於此揭露之材料及技術僅為例示性,且其他未載之材料及技術在不脫離本發明之範疇中皆能使用。 Materials and manufacturing methods that can be used to construct the polishing pad conditioner of the present invention will be described below. It should be noted that the materials and techniques disclosed herein are only exemplary, and other materials and techniques not described are within the scope of the present invention. can be used.
本發明之拋光墊修整器中,該基材1由不鏽鋼、金屬材料、塑膠材料及陶瓷材料之其一或以上所構成,實際上,只要該基材1能夠承載研磨層2極
可,較佳材料可為金屬基板、金屬合金基板、不鏽鋼基板或模具鋼基板。具體而言,該金屬基板包含但不限於銅、鐵、鋁、鈦或錫等;金屬合金基板包含但不限於鐵合金、銅合金、鋁合金、鈦合金或鎂合金等。
In the polishing pad dresser of the present invention, the
本發明之拋光墊修整器中,該結合層21係用以承載該研磨顆粒22的層間並附著於該基材1上,該研磨顆粒22主要係嵌入固定在該結合層21。該結合層21可使用各種不同方法形成,例如樹脂有機接合法、電鍍法、硬焊法電沉積,材料包含硬焊材料、電鍍材料、陶瓷材料、金屬材料或高分子材料,且本發明不限於此等。具體而言,該硬焊材料、該電鍍材料或該金屬材料包含至少一選自由鐵、鈷、鎳、鉻、錳、矽、鋁、及其組合所組成之群組;該高分子材料包含環氧樹脂、聚酯樹脂、聚丙烯酸樹脂或酚醛樹脂;該陶瓷材料包含各種金屬氧化物、氮化物、碳化物、硼化物、矽化物或其等之組合,例如碳化矽、氮化矽、氮化鋁、氧化鋁、碳化鈦、硼化鈦或碳化硼等。
In the polishing pad conditioner of the present invention, the
本發明之拋光墊修整器中,該研磨顆粒22係一或一者以上選自下列群組之研磨顆粒22:天然鑽石、人造鑽石、多晶鑽石、立方氮化硼、氧化鋁及碳化矽。本文中所稱之「該研磨顆粒22的突出部221」係指該研磨顆粒22上端未受保護層3覆蓋之部分,其外形可為但不限於角錐狀、圓錐狀、圓弧狀、圓柱狀、刀刃狀或角柱狀。
In the polishing pad conditioner of the present invention, the
本文中所稱之「該突出部221經絕緣處理」係指該研磨顆粒22經由結合過程鑲嵌並固定於該結合層21,研磨顆粒22之突出部221因在結合過程中受到硬焊、電鍍或燒結材料的殘留,故具有導電性,因此於結合過程後進一步絕緣處理,該絕緣處理包含以物理方式或化學方式絕緣。該物理方式絕緣包含以噴砂法或電漿法絕緣,其原理為例用噴砂或電漿,將突出部221上的導電物質清潔乾
淨因此不具導電性。其中,該噴砂法使用的噴砂顆粒粒徑約50~200μm,該電漿法的溫度約150~350度。該化學方式絕緣包含以蝕刻法絕緣,該蝕刻法係以化學溶液蝕刻,使突出部221上的導電物質因化學溶液蝕刻後清除;該化學溶液包含但不限於硝酸、王水、氫氟酸、硫酸、過氧化氫、過氯酸、鹽酸、氯化鐵、醋酸、硝酸銨鈰、氯化鉀、碘化鉀、過硫酸銨、氯化銨或其等組合。較佳地,該化學溶液包含一或一者以上選自下列群組之成分:硝酸、王水、氫氟酸、硫酸、過氧化氫、過氯酸、鹽酸、氯化鐵、醋酸及硝酸銨鈰。經該上述絕緣處理後,該突出部221表面絕緣而不帶電,後續保護層3即無法電沉積至該突出部221表面故而該突出部221能暴露在該保護層3之外。
The term “the protruding
本發明之拋光墊修整器中,該保護層3較佳係電沉積塗料組合物所形成,電沉積係一種表面處理,其係將該拋光墊修整器浸於電沉積塗料組合物中,並將該研磨層2置於電極間並賦予電流,因電氣作用使電沉積塗料組合物沉積在該結合層21表面而形成均勻的保護層3。雖然其他種表面處理(例如噴塗或旋轉塗佈)亦可採用,但使用電沉積塗佈可獲致均勻、厚度較薄的保護層3;薄厚度的保護層3可利於維持該研磨顆粒22及該保護層3之間具有相當的高度距離,維持該研磨顆粒22的切削力,該保護層3較佳的厚度可為但不限於10~30μm,且各位置之厚度差異較佳係控制於1.0~3.0μm,更佳係1.5μm。該電沉積塗料組合物包含一主體樹脂,該主體樹脂為環氧樹脂、丙烯酸樹脂、聚丁二烯樹脂、聚酯樹脂或聚醯胺樹脂。具體例如:胺改質環氧樹脂(例如含二乙基三胺的改性環氧樹脂)、含羧基及羥基的丙烯酸樹脂或環氧化的聚丁二烯樹脂等,且本發明並不限於此等。
In the polishing pad conditioner of the present invention, the
[具體實施例][specific embodiment]
以下實施例提供本發明之拋光墊修整器之製造方法,需了解該實施例僅供說明,並非用以限制本發明。 The following examples provide the manufacturing method of the polishing pad dresser of the present invention. It should be understood that the examples are only for illustration and are not intended to limit the present invention.
實施例. 本發明之突出部經絕緣處理的拋光墊修整器Example. Pad conditioner with insulated protrusions of the present invention
使用熔融的鎳鉻合金及鑽石顆粒於一不鏽鋼的表面形成一研磨層;使熔融的鎳鉻合金藉由表面張力包覆到每一該鑽石顆粒的部分斜側面,以將該鑽石顆粒嵌入支撐並固定。電漿絕緣處理每一該鑽石顆粒的突出部,使該突出部的表面絕緣。最後,電沉積一環氧樹脂(美商必丕志國際股份有限公司(PPG))至該結合層表面,形成一保護層,即獲得本發明之拋光墊修整器。 Use molten nickel-chromium alloy and diamond particles to form an abrasive layer on the surface of a stainless steel; make the molten nickel-chromium alloy coat part of the oblique side of each of the diamond particles by surface tension to embed the diamond particles into the support and fixed. Plasma insulating treatment of the protrusions of each of the diamond particles insulates the surface of the protrusions. Finally, an epoxy resin (Bipezhi International Co., Ltd. (PPG)) is electrodeposited on the surface of the bonding layer to form a protective layer, and the polishing pad conditioner of the present invention is obtained.
比較例1.突出部未經絕緣處理的拋光墊修整器Comparative Example 1. Pad conditioner without insulation treatment on protrusions
比較例1之拋光墊修整器之製造方法與實施例相同,差異僅在於比較例1並未將每一該鑽石顆粒的該突出部進行絕緣處理。 The manufacturing method of the polishing pad conditioner of Comparative Example 1 is the same as that of the embodiment, the only difference is that the protruding portion of each diamond particle is not insulated in Comparative Example 1.
測試1.切削力
分別測試實施例及比較例1拋光墊修整器的切削力,並藉由以下公式計算切削力變化率: The cutting force of the polishing pad conditioners of Example and Comparative Example 1 was tested respectively, and the rate of change of cutting force was calculated by the following formula:
;結果如下表1所示。 ; The results are shown in Table 1 below.
表1Table 1
如表1所示,實施例拋光墊修整器的結合層在覆蓋保護層後,切削力變化率為小於10%,代表即使經過保護層之覆蓋,實施例拋光墊修整器的切削力也不會下降;相較之下,比較例1拋光墊修整器的研磨層在覆蓋保護層後,切削力變化率為大於10%,從318μm/hr下降至202μm/hr。實施例及比較例1差異在於該保護層有無覆蓋該鑽石顆粒的突出部,由比較例1可見,當保護層覆蓋該突出部時,會大幅降低拋光墊修整器切削力。 As shown in Table 1, after the bonding layer of the polishing pad conditioner of the embodiment is covered with the protective layer, the cutting force change rate is less than 10%, which means that even after being covered by the protective layer, the cutting force of the polishing pad conditioner of the embodiment will not decrease. In contrast, after the abrasive layer of the polishing pad conditioner of Comparative Example 1 was covered with the protective layer, the cutting force change rate was greater than 10%, which decreased from 318 μm /hr to 202 μm /hr. The difference between Example 1 and Comparative Example 1 is whether the protective layer has protrusions covering the diamond particles. It can be seen from Comparative Example 1 that when the protective layer covers the protrusions, the cutting force of the pad dresser is greatly reduced.
測試2.掃描電子顯微鏡(SEM)拍攝拋光墊修整器的研磨層表面
使用掃描電子顯微鏡(SEM)拍攝實施例及比較例1拋光墊修整器的研磨層表面,結果如圖4所示;圖4(a)為比較例1拋光墊修整器的研磨層表面,圖4(b)為實施例拋光墊修整器的研磨層表面。如圖4(b)所示,實施例拋光墊修整器的研磨顆粒突出部因經過絕緣處理,保護層無法電沉積至其表面,因此具有較銳利的切削面。相較下,如圖4(a)所示,比較例1拋光墊修整器的研磨顆粒突出部並無經過絕緣處理,保護層有電沉積至其表面,因此切削面較為圓潤而無銳利的切削面。 Use scanning electron microscope (SEM) to photograph the surface of the abrasive layer of the polishing pad conditioner of Example and Comparative Example 1, the results are shown in Figure 4; Figure 4(a) is the surface of the abrasive layer of the polishing pad conditioner of Comparative Example 1, Figure 4 (b) is the surface of the abrasive layer of the polishing pad conditioner of the embodiment. As shown in FIG. 4( b ), the abrasive particle protruding portion of the polishing pad dresser of the embodiment has a sharper cutting surface because the protective layer cannot be electrodeposited on its surface due to the insulating treatment. In contrast, as shown in Fig. 4(a), the abrasive particle protrusions of the polishing pad conditioner of Comparative Example 1 have not undergone insulation treatment, and the protective layer is electrodeposited on the surface, so the cutting surface is relatively rounded without sharp cutting noodle.
比較例2.無保護層之拋光墊修整器Comparative Example 2. Pad conditioner without protective layer
使用熔融的鎳鉻合金及鑽石顆粒於一不鏽鋼的表面形成一研磨層;使熔融的鎳鉻合金藉由表面張力包覆到每一該鑽石顆粒的部分斜側面,以將該鑽石顆粒嵌入支撐並固定,即獲得無保護層之拋光墊修整器。 Use molten nickel-chromium alloy and diamond particles to form an abrasive layer on the surface of a stainless steel; make the molten nickel-chromium alloy coat part of the oblique side of each of the diamond particles by surface tension to embed the diamond particles into the support and Fixed, that is, to obtain a polishing pad conditioner without a protective layer.
測試3.金屬析出比較
分別使用3%硝酸液浸泡實施例及比較例2拋光墊修整器,於24小時後測試浸泡後的3%硝酸液中的金屬量,結果如下表2所示。 The polishing pad conditioners of Example and Comparative Example 2 were soaked in 3% nitric acid solution respectively, and the amount of metal in the soaked 3% nitric acid solution was tested after 24 hours. The results are shown in Table 2 below.
表2Table 2
如表2所示,3%硝酸液原液含有低濃度的鉻、鐵、鎳及鈷,而實施例拋光墊修整器經浸泡後,雖會有鉻、鐵、鎳及鈷析出,但濃度均不高。相較下,比較例2拋光墊修整器由於沒有保護層,鉻、鐵、鎳及鈷析出濃度則非常高。 As shown in Table 2, the 3% nitric acid liquid stock solution contains low concentrations of chromium, iron, nickel and cobalt, and the polishing pad dresser of the embodiment is soaked, although chromium, iron, nickel and cobalt are precipitated, but the concentrations are not high. In contrast, the polishing pad conditioner of Comparative Example 2 has very high precipitation concentrations of chromium, iron, nickel and cobalt because there is no protective layer.
經上述具體實施例,突出部經過絕緣處理所製造出的拋光墊修整器,由於鑽石顆粒的突出並無保護層覆蓋,因此可維持切削力,而不會降低研磨效果,維持拋光墊修整器的研磨能力。以及,當拋光墊修整器之結合層覆蓋有保護層時,可保護結合層的金屬不被析出。 Through the above-mentioned specific embodiment, the polishing pad conditioner manufactured by the insulating treatment of the protrusions can maintain the cutting force without reducing the grinding effect because the protrusions of the diamond particles are not covered by a protective layer, and the polishing pad conditioner can be maintained. Grinding ability. And, when the bonding layer of the pad conditioner is covered with a protective layer, the metal of the bonding layer can be protected from being precipitated.
綜上所述,本發明之拋光墊修整器具有保護層,其能防止CMP加工過程中,結合層的金屬(例如鎳)被析出而防止汙染,並保護結合層不受到磨損破壞而固持研磨顆粒,避免研磨顆粒脫落或異位,且可避免拋光墊修整器在研磨時保護層剝落(peeling)而產生雜質掉落在拋光墊上之情形,能維持研磨效果及延長使用壽命。另外,本發明之拋光墊修整器之製造方法中使用絕緣處理及電沉積,該絕緣處理可使研磨顆粒的突出部絕緣,使後續電沉積時保護層不會覆蓋該突出部,而使用電沉積所完成的保護層具有厚度薄及分布均勻之優勢,能維持該突出部的高度,即維持該拋光墊修整器的切削力。是以,本發明之拋光墊修整器適於用在CMP,具有產業利用性。 In summary, the polishing pad conditioner of the present invention has a protective layer, which can prevent the metal (eg nickel) of the bonding layer from being precipitated during the CMP process to prevent contamination, and protect the bonding layer from being damaged by wear and hold the abrasive particles. , to prevent the abrasive particles from falling off or out of position, and to prevent the protective layer of the polishing pad dresser from peeling off (peeling) during polishing, resulting in impurities falling on the polishing pad, which can maintain the polishing effect and prolong the service life. In addition, in the manufacturing method of the polishing pad conditioner of the present invention, insulating treatment and electrodeposition are used, and the insulating treatment can insulate the protrusions of the abrasive particles, so that the protective layer will not cover the protrusions during subsequent electrodeposition, and electrodeposition is used. The completed protective layer has the advantages of thin thickness and uniform distribution, and can maintain the height of the protrusion, that is, maintain the cutting force of the polishing pad conditioner. Therefore, the polishing pad conditioner of the present invention is suitable for use in CMP and has industrial applicability.
以上已將本發明做一詳細說明,惟以上所述者,僅惟本發明之一較佳實施例而已,當不能以此限定本發明實施之範圍,即凡依本發明申請專利範圍所作之均等變化與修飾,皆應仍屬本發明之專利涵蓋範圍內。 The present invention has been described in detail above, but what has been described above is only a preferred embodiment of the present invention, and should not limit the scope of implementation of the present invention, that is, all claims made according to the scope of the patent application of the present invention are equal Changes and modifications should still fall within the scope of the patent of the present invention.
1:基材 1: Substrate
2:研磨層 2: abrasive layer
21:結合層 21: Bonding layer
22:研磨顆粒 22: Abrasive particles
221:突出部 221: Protrusion
3:保護層 3: protective layer
Claims (11)
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CN202110491661.9A CN116423390A (en) | 2020-10-14 | 2021-05-06 | Polishing pad conditioner and method for manufacturing the same |
JP2021096152A JP7281502B2 (en) | 2020-10-14 | 2021-06-08 | Polishing pad dresser and manufacturing method thereof |
US17/363,489 US20220111488A1 (en) | 2020-10-14 | 2021-06-30 | Polishing pad conditioner and manufacturing method thereof |
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US20020173234A1 (en) * | 1999-11-22 | 2002-11-21 | Chien-Min Sung | Diamond grid CMP pad dresser |
TW201028249A (en) * | 2009-01-26 | 2010-08-01 | jian-min Song | Thin Film Brazing of Superabrasive Tools |
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JP2002239905A (en) * | 2001-02-21 | 2002-08-28 | Allied Material Corp | Pad conditioner for cmp, and method for manufacturing the same |
JP3969047B2 (en) * | 2001-10-05 | 2007-08-29 | 三菱マテリアル株式会社 | CMP conditioner and method of manufacturing the same |
JP2004066409A (en) * | 2002-08-07 | 2004-03-04 | Mitsubishi Materials Corp | Cmp conditioner |
US7258708B2 (en) * | 2004-12-30 | 2007-08-21 | Chien-Min Sung | Chemical mechanical polishing pad dresser |
CN102092007B (en) * | 2009-12-11 | 2012-11-28 | 林舜天 | Method for preparing trimmer |
CA2773197A1 (en) * | 2012-03-27 | 2013-09-27 | Yundong Li | Electroplated super abrasive tools with the abrasive particles chemically bonded and deliberately placed, and methods for making the same |
JP5957317B2 (en) * | 2012-07-09 | 2016-07-27 | 新日鉄住金マテリアルズ株式会社 | Dresser for polishing cloth and method for producing the same |
JP6616221B2 (en) * | 2016-03-23 | 2019-12-04 | 株式会社アイゼン | Conditioner for pad and method for manufacturing the same |
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US20020173234A1 (en) * | 1999-11-22 | 2002-11-21 | Chien-Min Sung | Diamond grid CMP pad dresser |
TW201028249A (en) * | 2009-01-26 | 2010-08-01 | jian-min Song | Thin Film Brazing of Superabrasive Tools |
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CN116065217A (en) * | 2022-12-26 | 2023-05-05 | 吉姆西半导体科技(无锡)有限公司 | Preparation method of polishing pad finisher for CMP and polishing pad modulator |
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