CN116652825B - Diamond CMP polishing pad trimmer and preparation method thereof - Google Patents
Diamond CMP polishing pad trimmer and preparation method thereof Download PDFInfo
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- CN116652825B CN116652825B CN202310911613.XA CN202310911613A CN116652825B CN 116652825 B CN116652825 B CN 116652825B CN 202310911613 A CN202310911613 A CN 202310911613A CN 116652825 B CN116652825 B CN 116652825B
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 105
- 239000010432 diamond Substances 0.000 title claims abstract description 105
- 238000005498 polishing Methods 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000009826 distribution Methods 0.000 claims abstract description 20
- 238000000151 deposition Methods 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 8
- 238000010329 laser etching Methods 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 238000003754 machining Methods 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 claims description 2
- 238000005488 sandblasting Methods 0.000 claims description 2
- 239000000725 suspension Substances 0.000 claims description 2
- 238000009966 trimming Methods 0.000 abstract description 6
- 238000005520 cutting process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000003750 conditioning effect Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000000942 confocal micrograph Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0054—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for by impressing abrasive powder in a matrix
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Abstract
The invention discloses a diamond CMP polishing pad trimmer and a preparation method thereof, wherein the trimmer comprises a substrate and a diamond layer formed on the surface of the substrate, the trimmer is provided with a protruding structure, and the protruding structure is formed by the diamond layer; the height of the protruding structures is 10-90 μm, and the distribution density of the protruding structures is 1-100 pieces/mm 2 The included angle between the side profile surface and the bottom surface of the protrusion structure is 30-60 degrees. The height of the protruding structure is controlled, and the good trimming capability and the enough service life can be ensured.
Description
Technical Field
The invention relates to the field of semiconductor processing, in particular to a diamond CMP polishing pad trimmer and a preparation method thereof.
Background
Chemical Mechanical Polishing (CMP) is widely used in the manufacture of semiconductor chips and memory devices for removing material from a wafer substrate for the purpose of planarizing or polishing the wafer surface. The polishing pad is worn and aged in the polishing process, and meanwhile, the surface of the polishing pad is glazed by the chips and reaction byproducts accumulated in the polishing process, so that the micro-textures on the surface of the polishing pad are smooth and lose the polishing effect, and the polishing efficiency of the wafer and the uniformity and consistency of the surface polishing quality are affected. The CMP pad dresser removes the residue and the aged layer on the surface of the polishing pad by mechanically grinding the surface of the polishing pad, and generates new micro-textures on the surface of the polishing pad to restore the original polishing characteristics of the polishing pad, so as to maintain the stability and consistency of the polishing quality of the wafer by maintaining the removal rate of the CMP process.
Since the dressing process of the CMP pad dresser to the polishing pad is a re-etching process of the surface topography, the performance of the dresser determines the surface state and polishing performance of the polishing pad, thereby affecting the quality of the entire CMP. As integrated circuit stacks become denser, feature linewidths shrink smaller, and multi-layered and three-dimensional structures place more stringent demands on the global planarization process of wafer surface structures, and also on CMP pad trimmers.
To achieve pad conditioning, the surface of the conditioner needs to have a protrusion structure, and the conventional manner of manufacturing the protrusion structure is as follows: the protruding structure is composed of a base material.
Patent document 1 (publication No. CN102612734 a) discloses a method of forming a Chemical Mechanical Polishing (CMP) conditioner, comprising: pressing a ceramic particulate in a mold to form a green body having a major surface including a plurality of microprotrusions; sintering the green body to form a ceramic substrate; an abrasive coating is deposited overlying the ceramic substrate, the deposition including chemical vapor deposition, the abrasive coating including microcrystalline diamond, nanocrystalline diamond.
Patent document 2 (publication No. CN114227555 a) discloses a method of manufacturing a chemical mechanical polishing dresser, and specifically discloses: and controlling laser to rapidly scan and process the ceramic matrix on the triaxial numerical control platform in the three-dimensional direction to obtain a matrix with a pyramid-shaped structure on the surface, and depositing a diamond film with uniform thickness on the surface of the matrix by hot filament chemical vapor deposition to manufacture the chemical mechanical polishing trimmer.
The protrusion structures in patent documents 1 and 2 are composed of a base material, and are formed before diamond deposition. Differences in diamond particle orientation, size and diamond layer thickness result in poor protrusion structure height uniformity. In addition, the high temperature diamond layer deposition process is prone to deformation of the substrate material, which can lead to reduced dressing ability and insufficient service life of the dresser.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention provides a diamond CMP pad conditioner and a method for manufacturing the same, which can ensure an excellent conditioning ability while also ensuring a sufficient service life.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the invention provides a diamond CMP polishing pad dresser, which comprises a substrate and a diamond layer formed on the surface of the substrate, wherein the dresser is provided with a protruding structure, the protruding structure is composed of the diamond layer, the height of the protruding structure is 10-90 mu m, and the distribution density of the protruding structure is 1-100 pieces/mm 2 The included angle between the side surface profile surface and the bottom surface of the protruding structure is 30 DEG-60°。
The protruding structure is obtained by processing the diamond layer, and the height of the protruding structure is not influenced by the size, the orientation and the thickness of diamond particles in the diamond layer and is also not influenced by high-temperature deformation in the preparation process of the diamond layer, so that the height is controllable.
The excessively high height of the bump structure increases the dressing capability of the dresser, but also increases the loss of the polishing pad, and reduces the service life of the polishing pad, thereby increasing the cost of the CMP process in the semiconductor manufacturing process and simultaneously causing the problem of undefined structure with uneven wafer surface; however, too low a height reduces the dressing ability of the polishing pad and does not allow for repair of the polishing pad surface and restoration of the cutting ability. Thus, the height of the protrusion structure is 10-90 μm, and further, the height of the protrusion structure is 20-60 μm.
When the distribution density of the protruding structures is too low, fewer grooves are generated on the polishing pad, and the grooves are larger, so that the loss is increased while the removal capacity of the polishing pad is reduced. Too high a distribution density of the raised structures can result in too many grooves in the polishing pad, but smaller grooves, which ultimately results in reduced removal ability and increased surface wear of the polishing pad. Therefore, the distribution density of the protruding structures is 1-100 pieces/mm 2 。
When the included angle between the side profile surface and the bottom surface of the protrusion structure is too small, the trimming capability of the protrusion structure is insufficient. When the included angle between the side surface outline surface and the bottom surface of the protruding structure is too large, the protruding structure is not strong enough and is easy to break. Therefore, the included angle between the side profile surface and the bottom surface of the protrusion structure is 30-60 degrees.
Further, the protruding structures have 2-5 different heights. Therefore, after the protruding structures in the areas with higher heights are worn and passivated, the protruding structures in the areas with lower heights can play a role in trimming, stability of trimming efficiency of the trimmer is guaranteed, and service life of the trimmer is prolonged.
Further, the tops of the protruding structures are planar, and the top area is 20-2000 μm 2 . This is on the one hand for ease of processing and on the other hand for ensuring that the protruding structures have sufficient strength.
Further, the diamond layer is a CVD diamond layer, which contributes to improved wear resistance.
Further, the deposition temperature of the CVD diamond is generally higher, when a substrate material containing iron, cobalt, nickel and the like is adopted to deposit the diamond layer, a large amount of carbon is dissolved in the substrate, and after the deposition, the temperature is reduced to room temperature, a large amount of carbon is separated between the diamond and a metal interface, so that the adhesion force between the CVD diamond layer and the substrate is lower, and the coating is easy to fall off to scratch a wafer. And the differences of the thermal expansion coefficients of silicon carbide, aluminum nitride, boron nitride, silicon dioxide and diamond are small, and chemical bonds formed by carbide are easy to form at the interface, so that the CVD diamond has good adhesive force on the chemical bonds.
Further, the CVD diamond layer is a single crystal layer to ensure wear consistency of each raised structure.
Further, the SP2 bond content in the diamond layer is more than 0 and less than 3%, and the nitrogen element content is 0.2-10ppm. Thus, not only the fracture strength and the abrasion ratio of the CVD diamond layer can be improved, but also the fracture toughness of the CVD diamond layer can be increased, and the diamond embrittlement can be avoided.
Further, the diamond layer has a diamond particle size greater than or equal to 1 μm and less than half of the maximum thickness of the diamond layer. Therefore, the abrasion resistance and strength of the protruding structure can be ensured, and meanwhile, the problem that the polishing solution permeates and corrodes the substrate due to more holes can be avoided.
The invention also provides a preparation method of the diamond CMP polishing pad trimmer, which comprises the following steps:
(a) Manufacturing a substrate;
manufacturing a substrate by adopting machining or mould pressing sintering, and cleaning and surface pretreatment of the substrate; the surface pretreatment is diamond powder suspension ultrasonic oscillation, diamond powder sand blasting treatment or diamond powder manual grinding;
(b) Preparing a diamond layer;
forming a diamond layer on the surface of the substrate;
(c) Manufacturing a protrusion structure on the surface of the diamond layer;
processing the surface of the diamond layerObtaining a protruding structure, wherein the height of the protruding structure is 10-90 mu m, and the distribution density of the protruding structure is 1-100 pieces/mm 2 The included angle between the side profile surface and the bottom surface of the protrusion structure is 30-60 degrees.
Further, the diamond layer in step (b) is prepared as a CVD deposition, preferably a direct current arc plasma jet CVD.
Further, the CVD deposition atmosphere has a C/H percentage of 0.4-6%, an N/C percentage of 0.2-10%, a growth pressure of 1-30kPa, a deposition temperature of 750-1050 ℃, an argon flow of up to 10SLM, and a deposition time of 2-17H.
Further, the processing in the step (c) is laser etching, the laser etching parameters are that the scanning speed is 10-125mm/min, and the energy density is 2-35J/cm 2 The repetition frequency is 200-1200Hz.
Further, in the step (c), the diamond layer is subjected to surface grinding or polishing treatment before the processing, so that the parallelism between the upper surface of the diamond and the back surface of the substrate is less than or equal to 5 mu m. When the parallelism is poor, the high consistency is poor in the subsequent diamond protruding structure manufacturing process, and the diamond layer is easily damaged by laser etching and other processing, so that the substrate is exposed, and the subsequent CMP process is polluted.
Drawings
FIG. 1 is a schematic view of a trimmer according to the present invention;
FIG. 2 is a partial laser confocal micrograph of a trimmer of the present invention;
FIG. 3 is a flow chart of a process for preparing the trimmer of the present invention.
Reference numerals: a 1-conditioner substrate, a 2-diamond layer, and a protrusion structure in the 3-diamond layer.
Detailed Description
The invention is further illustrated by the following examples, which further illustrate the process of the invention and its advantages.
Example 1
Referring to fig. 1, the diamond CMP polishing pad conditioner includes a conditioner substrate 1 and a diamond layer 2 formed on the surface of the conditioner substrate 1, the conditioner having a protrusion structure 3, the protrusion structure 3 being constituted by the diamond layerThe height was 16 μm and the distribution density of the protruding structures 3 was 80 pieces/mm 2 The angle between the side profile surface and the bottom surface of the protruding structure 3 is 30 °.
The trimmers were tested to form a complete contact profile over a height distribution of 5 microns. The initial cutting efficiency of about 93% was maintained after finishing for 100 hours.
In embodiments 1 to 5 of the present invention, the conditioner substrate 1 may be specifically a silicon carbide substrate, or may be a substrate made of any other reasonable material.
Example 2
Referring to FIG. 1, the diamond CMP pad dresser includes a dresser substrate 1 and a diamond layer 2 formed on the surface of the dresser substrate 1, the dresser having a protrusion structure 3, the protrusion structure 3 being constituted by the diamond layer 2, having a height of 90 μm, and a distribution density of the protrusion structure 3 of 2 pieces/mm 2 The included angle between the side profile surface and the bottom surface of the protruding structure 3 is 60 degrees, and the plane area of the top of the protruding structure 3 is 1100 mu m 2 . The SP2 bond content in the diamond layer 2 was 2.1%, the nitrogen element content was 1ppm, the diamond particle size was 32 μm, and the maximum thickness of the diamond layer 2 was 109. Mu.m. The trimmers were tested to form a complete contact profile over a height distribution of 5 microns. The initial cutting efficiency of about 95% was maintained after finishing for 100 hours.
Example 3
Referring to FIG. 1, the diamond CMP pad dresser includes a dresser substrate 1 and a diamond layer 2 formed on the surface of the dresser substrate 1, the dresser having a bump structure 3, the bump structure 3 being constituted by the diamond layer, the height being 53 μm, the distribution density of the bump structure 3 being 6 pieces/mm 2 The included angle between the side profile surface and the bottom surface of the protruding structure 3 is 56 degrees, and the plane area of the top of the protruding structure 3 is 210 mu m 2 As shown in fig. 2. The SP2 bond content in the diamond layer 2 was 1.5%, the nitrogen element content was 5ppm, the diamond particle size was 28 μm, and the maximum thickness of the diamond layer 2 was 82. Mu.m.
The trimmers were tested to form a complete contact profile over a height distribution of 2 microns. The initial cutting efficiency of about 97% was maintained after finishing for 100 hours.
Example 4
Referring to FIG. 1, the diamond CMP pad dresser includes a dresser substrate 1 and a diamond layer 2 formed on the surface of the dresser substrate 1, the dresser having a bump structure 3, the bump structure 3 being constituted by the diamond layer, the bump structure 3 having 2 different heights, a first height of 62 μm, a second height of 48 μm, and a distribution density of the bump structure 3 of 13 pieces/mm 2 The included angle between the side profile surface and the bottom surface of the protruding structure 3 is 43 degrees, and the plane area of the top of the protruding structure 3 is 2000 μm 2 . The SP2 bond content in diamond layer 2 was 2.4%, the nitrogen content was 10ppm, the diamond particle size was 22 μm, and the maximum thickness of diamond layer 2 was 77. Mu.m.
The initial cutting efficiency of about 98% was maintained after 100 hours of conditioning by the conditioner.
Example 5
Referring to fig. 3, (a) taking the example where the dresser substrate 1 is a silicon carbide substrate, the silicon carbide substrate is produced by press sintering, and the substrate is cleaned and diamond powder is manually polished. (b) The substrate is placed in a direct current arc plasma jet CVD deposition chamber for diamond deposition, forming a diamond layer 2 on the substrate surface. The CVD diamond deposition atmosphere has a C/H percentage of 2%, an N/C percentage of 4%, a growth air pressure of 3.5kPa, a deposition temperature of 840 ℃, an argon flow of 2.8SLM and a deposition time of 13H; the SP2 bond content in diamond layer 2 was 1.1%, the nitrogen content was 7ppm, and the diamond particle size was 31. Mu.m. (c) Polishing the surface of the diamond layer 2 to make the parallelism between the upper surface of the diamond and the back surface of the substrate 1 be 4 μm, and then carrying out laser etching on the surface of the diamond layer 2 to obtain a protruding structure 3 with a height of 74 μm, wherein the distribution density of the protruding structure 3 is 2 pieces/mm 2 The top planar area of the protruding structures 3 was 390 μm 2 The included angle between the side surface profile surface and the bottom surface of the protruding structure 3 is 48 degrees, the scanning speed of laser etching is 98mm/min, and the energy density is 26J/cm 2 The repetition frequency is 1000Hz. The maximum thickness of the diamond layer 2 was 92 μm.
The trimmers were tested to form a complete contact profile over a height distribution of 4 microns. The initial cutting efficiency of about 94% was maintained after finishing for 100 hours.
Comparative example 1
The CMP pad conditioner includes a silicon carbide substrate, and a CVD diamond layer formed on a surface of the substrate. The dresser has a projection structure composed of a silicon carbide substrate, specifically, a silicon carbide particulate pressed in a mold to form a green body having a main surface with a plurality of projection structures; sintering the green body to form a silicon carbide substrate; the height of the protruding structures is 57 mu m, and the distribution density of the protruding structures is 5 pieces/mm 2 。
The trimmers were tested to form a complete contact profile over a height distribution of 14 microns. The initial cutting efficiency was maintained at about 71% after trimming for 100 hours.
Comparative example 2
The substrate of the CMP pad trimmer is silicon carbide, the surface of the substrate is provided with pyramid-shaped protrusions, the substrate is covered with a CVD diamond film, wherein the height of the protrusions is 45 mu m, and the distribution density of the protrusion structures is 4 pieces/mm 2 。
The trimmers were tested to form a complete contact profile over a height distribution of 11 microns. The initial cutting efficiency was maintained at about 82% after trimming for 100 hours.
Claims (9)
1. A diamond CMP polishing pad conditioner comprises a substrate and a diamond layer formed on the surface of the substrate, the conditioner has a protrusion structure, characterized in that the protrusion structure is composed of the diamond layer, the height of the protrusion structure is 10-90 μm, and the distribution density of the protrusion structure is 1-100 pieces/mm 2 The included angle between the profile surface of the side face and the bottom face of the protruding structure is 30 degrees to 60 degrees, the SP2 bond content in the diamond layer is more than 0 and less than 3 percent, the nitrogen element content is 0.2 ppm to 10ppm, and the diamond particle size in the diamond layer is more than or equal to 1 mu m and less than half of the maximum thickness of the diamond layer.
2. The trimmer of claim 1, wherein said raised structures have 2-5 different heights.
3. As claimed inThe trimmer according to claim 1 or 2, wherein the top of the protruding structure is a plane, and the top area is 20-2000 μm 2 。
4. The trimmer of claim 1 wherein said substrate is silicon carbide and said diamond layer is a CVD diamond layer.
5. The trimmer of claim 4 wherein said CVD diamond layer is a single crystal layer.
6. The method of manufacturing a trimmer according to any one of claims 1 to 5, comprising the steps of:
(a) Manufacturing a substrate;
manufacturing a substrate by adopting machining or mould pressing sintering, and cleaning and surface pretreatment of the substrate; the surface pretreatment is diamond powder suspension ultrasonic oscillation, diamond powder sand blasting treatment or diamond powder manual grinding;
(b) Preparing a diamond layer;
forming a diamond layer on the surface of the substrate;
(c) Manufacturing a protrusion structure on the surface of the diamond layer;
and processing the surface of the diamond layer to obtain a protruding structure.
7. The method of claim 6, wherein the diamond layer in step (b) is formed by direct current arc plasma jet CVD and the process in step (c) is laser etching.
8. The method of claim 7 wherein the CVD deposition atmosphere has a C/H percentage of 0.4% -6%, an N/C percentage of 0.2% -10%, a growth pressure of 1-30kPa, a deposition temperature of 750-1050 ℃, an argon flow of up to 10SLM, and a deposition time of 2-17H; the laser etching parameters are that the scanning speed is 10-125mm/min and the energy density is 2-35J/cm 2 The repetition frequency is 200-1200Hz.
9. The method of claim 6, wherein the diamond layer is further surface-ground or polished prior to the processing in step (c) to have a parallelism of less than or equal to 5 μm between the upper surface of the diamond and the back surface of the substrate.
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| CN101722475A (en) * | 2008-10-22 | 2010-06-09 | 宋健民 | CMP pad dressers with hybridized abrasive surface and related methods |
| CN102612734A (en) * | 2009-09-01 | 2012-07-25 | 圣戈班磨料磨具有限公司 | Chemical mechanical polishing conditioner |
| KR20120080901A (en) * | 2011-01-10 | 2012-07-18 | 한양대학교 산학협력단 | Pad conditioner of having hydrophobic organic layer |
| CN103688343A (en) * | 2011-03-07 | 2014-03-26 | 恩特格里公司 | Chemical mechanical planarization pad conditioner |
| CN202952160U (en) * | 2012-12-11 | 2013-05-29 | 中芯国际集成电路制造(北京)有限公司 | Chemical-mechanical polishing finisher |
| KR20140098015A (en) * | 2013-01-30 | 2014-08-07 | 새솔다이아몬드공업 주식회사 | Polishing pad conditioner and method for manufacturing the same |
| CN106041741A (en) * | 2016-06-21 | 2016-10-26 | 大连理工大学 | CMP polishing pad finisher with porous structure |
| CN116423390A (en) * | 2020-10-14 | 2023-07-14 | 台湾中国砂轮企业股份有限公司 | Polishing pad conditioner and method for manufacturing the same |
| CN216030146U (en) * | 2021-10-29 | 2022-03-15 | 江苏韦尔博新材料科技有限公司 | Brazing diamond dresser for chemical mechanical polishing |
| CN115106936A (en) * | 2022-06-24 | 2022-09-27 | 中国地质大学（武汉） | Diamond dressing disc and preparation method thereof |
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| CN116652825A (en) | 2023-08-29 |
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