WO2009091140A2

WO2009091140A2 - Conditioner for chemical mechanical planarization pad

Info

Publication number: WO2009091140A2
Application number: PCT/KR2008/007788
Authority: WO
Inventors: Jung-Soo An
Original assignee: Ehwa Diamond Industrial Co., Ltd.
Priority date: 2008-01-15
Filing date: 2008-12-30
Publication date: 2009-07-23
Also published as: WO2009091140A3; KR20090078647A

Abstract

A CMP pad conditioner is used in global planar izat ion of wafers for high integration of semiconductor devices. The CMP pad conditioner includes a frame fixing abrasive particles to prevent the abrasive particles from being detached from the conditioner, the abrasive particles protruding from the fixing frame at a predetermined height, and a molding material fixing the fixing frame and the abrasive materials to each other. The abrasive particles are placed inside the through-holes, by one abrasive particle in one through-hole, and each of the abrasive particles is partially exposed from the underside surface of the fixing frame. The conditioner can ensure stability of prevent abrasive particles from being detached, realize uniform dressing, excellent dressing efficiency and excellent performance reproducibility, and remarkably remove the probability of scratches.

Description

[DESCRIPTION] [Invention Title]

CONDITIONER FOR CHEMICAL MECHANICAL PLANARIZATION PAD

[Technical Field]

<i> The present invention relates to a Chemical Mechanical Planarizat ion (CMP) pad conditioner in global planarization of wafers for high integration of semiconductor devices. More particularly, the present invention relates to a CMP pad conditioner in which abrasive particles can be stably held in a fixing frame to fundamentally eliminate the risk of scratches on wafers, which would otherwise be caused by detached abrasive particles.

<2>

[Background Art]

<3> In recent years, the semiconductor industry has developed high-speed and high-integration circuits, with gradual increase in integration density leading to gradual increase in chip sizes. Structural changes such as multilayer circuit have been carried out, following methods of reducing line widths and enlarging the diameter of wafers, in order to overcome limits.

<4> However, as the integration density of devices is raised and the line width of circuits is narrowed, technical limits that cannot be overcome by conventional planarization methods have been reached. At present, Chemical Mechanical Planarization (CMP) is a unique solution to overcome such limits. The CMP is also referred to as global planarization that planarizes the entire surface of wafers in order to improve process efficiency or quality. These days, wafer processes essentially require the global planarization of the CMP.

<5> The CMP is a chemical-mechanical planarization process that planarizes a semiconductor wafer using both a polishing process and a dissolution process of a chemical solution.

<6> According to the principle of the planarization process, a polishing pad and the wafer are pressed to each other while performing relative motion while a quantity of slurry, a mixture containing a chemical solution and abrasive particles, is being supplied. Here, a great number of pores in the surface of the polyurethane polishing pad act to contain the newly-supplied slurry thereby obtaining constant polishing efficiency and polishing uniformity on the entire surface of the wafer.

<7> However, since pressure and relative speed are applied during polishing, the surface of the pad is deformed irregularly and the fine pores of the polishing pad are clogged with polishing debris with the lapse of polishing time, and thereby the polishing pad loses its function. As a result, global planarizat ion on the entire surface of a wafer and uniform polishing of wafers cannot be achieved.

<8> In order to overcome such problems of the irregular deformation of the pad and the clogging of the fine pores, a conditioning process is performed using a conditioner, which finely dresses the surface of the pad during polishing, allowing the clogged pores to act as new fine pores.

<9> As the most important feature for the conditioner, the abrasive particles are required not to be detached or broken in the conditioning process.

<io> This is because the hard abrasive particles detached or broken from the conditioner scratch a circuit on the wafer, thereby causing a great economic loss.

<ii> Although semiconductor companies are imposing very strict specification management on scratches in practice, conventional technologies cannot fundamentally prevent the scratches. Accordingly, there are demands for development of a novel CMP pad conditioner that can fundamentally prevent scratches.

<12> Conventional methods of manufacturing conditioners include an electroplating method as shown in FIG. 1, a brazing method as shown in FIG. 2, a sintering method as shown in FIG. 3 and the like. However, these methods cannot completely prevent abrasive particles from being detached.

<i3> In FIGS. 1 to 3, the reference numeral 10 designates abrasive particles, 11 designates a metal bond layer produced by Ni plating, 12 designates a metal body, 13 designates a brazed metal bond layer, and 14 designates a sintered metal bond layer.

<i4> The electroplated conditioner produced by the electroplating method has a relatively weak bonding force compared to those manufactured by other methods since Ni ions surround and fix abrasive particles only in mechanical method.

<i5> Therefore, this conditioner cannot completely prevent the abrasive particles from being detached therefrom. In addition, the bonding force is changed depending on a deviation in the height of a Ni plating layer surrounding the abrasive particles.

<16> In the case of the brazed conditioner, the abrasive particles are brazed using Ni-based brazing metal bond. The brazed conditioner has a very strong bonding force due to chemical reaction in the interface between the abrasive particles and the Ni-based brazing metal bond.

<i7> However, since brazing takes place at about 1000^°C (degrees Celsius), the abrasive particles are subjected to thermal impact. Then, the thermally- unstable abrasive particles may break in use due to weakened strength or internal cracks, thereby causing scratches.

<i8> The sintered conditioner also has the same problems since it is manufactured at high temperature like the conditioner manufactured by the brazing method.

<19> Furthermore, such conventional conditioners have another problem of poor flatness of a surface, from which the abrasive particles are exposed.

<2o> In the electroplated conditioner, current density differs depending on the positions of plated portions during electroplating, thereby varying the bonding rate of Ni ions. Thus, it is difficult to ensure that the bonding surface, from which the abrasive particles protrude, has a flatness 30 μm or less.

<2i> In the case of brazing or sintering, the conditioner is manufactured at a temperature approximately in the range from 800 to 1000^°C (degrees Celsius). Thus, the thermal deformation of the body and the coarse metal surface make it difficult to ensure a flatness 100 μm or less.

<22> However, in the CMP process, wafers cannot be polished to be flat unless the CMP pad is uniformly conditioned to be flat. This means that the CMP pad can be uniformly conditioned only if the conditioner has excellent flatness. This can be a very important feature in terms of process reproducibi 1 i ty.

<23> In addition, in the conventional conditioners, the abrasive particles protrude from the polishing surface at irregular heights, that is, the heights have a large deviation. Since the abrasive particles are fixed to the flat underside surface of the conditioner, the protruding heights are varied according to the sizes and shapes of the used abrasive particles.

<24> In order to overcome such problems of the prior art, proposed is a method of placing abrasive particles on a metal bond layer, pressing a flat board to the abrasive particles using a press to align exposed leading edges, and then performing brazing or sintering.

<25> However, these conventional methods also have a problem in that there is difficult to adjust the shape and orientation of respective abrasive particles so that the edges of the abrasive particles vertically protrude toward the polishing direction.

<26>

[Disclosure] [Technical Problem]

<27> The present invention has been proposed based on the results of studies and experiments exerted to solve the foregoing problems with the prior art.

<28> Objects of the invention are to provide a Chemical Mechanical Planarization (CMP) pad conditioner, which can completely eliminate the risk of abrasive particles being detached, which has not been overcome in the prior art, using a fixing frame of abrasive particles, so as to remarkably remove the probability of scratches while realizing excellent dressing efficiency and performance reproducibility. <29>

[Technical Solution]

<30> Aspects of the present invention will now be described.

<3i> According to an aspect of the present invention, the CMP pad conditioner may include a fixing frame having a plurality of through-holes extending through top and underside surfaces thereof, abrasive particles partially placed in the through-holes, respectively, and a molding material fixing the fixing frame and the abrasive particles to each other, wherein the through-holes have sizes expressed by Relations 1 and 2 below:

<32> Ll < L2 Relation 1, and

<33> D < L2 Relation 2,

<34> where D is the size of an abrasive-particle, Ll is the size of a through-hole in the underside surface of the fixing frame, and L2 is the size of the through-hole in the top surface of the fixing frame, wherein only one of the abrasive particles is placed in a corresponding one of the through- holes, and wherein each of the abrasive particles is partially exposed from the underside surface of the fixing frame.

<35> According to another aspect of the present invention, the CMP pad conditioner may include a fixing frame having a plurality of through-holes extending through top and underside surfaces thereof, abrasive particles placed in the through-holes, respectively, and a molding material fixing the fixing frame and the abrasive particles to each other, wherein the through- holes have sizes expressed by Relations 1 and 2 below:

<36> Ll < L2 Relation 1, and

<37> D < L2 Relation 2,

<38> where D is the size of an abrasive-particle, Ll is the size of a through-hole in the underside surface of the fixing frame, and L2 is the size of the through-hole in the top surface of the fixing frame, wherein the abrasive particles and the through-holes have sizes expressed by Relation 3 be1ow:

<39> S < Ll < D Relation 3, <40> where S is the size of a predetermined portion of the abrasive particle, which protrudes from the underside surface of the fixing frame, wherein only one of the abrasive particles is placed in a corresponding one of the through-holes, and wherein each of the abrasive particles is partially exposed from the underside surface of the fixing frame.

<41>

[Advantageous Effects]

<42> As set forth above, the invention can completely prevent abrasive particles from being detached so that scratches do not occur on semiconductor wafers, thereby lowering fraction defective as well as reducing the manufacturing costs of the wafers.

<43> In addition, the invention makes it possible to manufacture a conditioner having excellent flatness and uniform protrusion of abrasive particles, thereby achieving excellent performance reproducibility of products.

<44> Moreover, the conditioner of the invention can increase dressing efficiency of the CMP pad using sharp edge points of abrasive particles and stably use the abrasive particles, which are not detached therefrom, thereby increasing the lifetime of a tool.

<45>

[Description of Drawings] <46> FIG. 1 is a view illustrating an example of a CMP pad conditioner, manufactured by conventional electroplating; <47> FIG. 2 is a view illustrating an example of a CMP pad conditioner, manufactured by conventional brazing; <48> FIG. 3 is a view illustrating an example of a CMP pad conditioner, manufactured by conventional sintering; <49> FIG. 4 is a schematic view illustrating several shapes of through-holes of a fixing frame according to the invention! <50> FIG. 5 is a schematic view illustrating several shapes of abrasive particles; <5i> FIG. 6 is a schematic view illustrating several cross-sectional shapes of fixing frames according to the invention; <52> FIG. 7 is a schematic view illustrating a process of manufacturing a

CMP pad conditioner according to the invention; <53> FIG. 8 is a schematic view illustrating an exemplary embodiment of a

CMP pad according to the invention; <54> FIG. 9 is a schematic view illustrating abrasive particles positioned inside a fixing frame according to the invention! <55> FIG. 10 is a schematic view illustrating a CMP pad conditioner according to the invention, in which abrasive particles are exposed from the fixing frame at a predetermined height irrespective of sizes; <56> FIG. 11 is a schematic view illustrating another exemplary embodiment of a CMP pad according to the invention; and <57> FIG. 12 is a schematic view illustrating a further exemplary embodiment of a CMP pad according to the invention.

<58>

[Best Mode]

<59> The present invention will now be described more fully hereinafter.

<60> A CMP pad conditioner of the invention includes a frame fixing abrasive particles (hereinafter be referred to as "fixing frame") to prevent the abrasive particles from being detached from the conditioner, the abrasive particles protruding from the fixing frame at a predetermined height, and a molding material fixing the fixing frame and the abrasive materials to each other.

<6i> The fixing frame has top and underside surfaces with a plurality of through-holes extending from the top surface to the underside surface.

<62> The abrasive particles are placed inside the through-holes, by one abrasive particle in one through-hole, and each of the abrasive particles is partially exposed from the underside surface of the fixing frame.

<63> Each of the abrasive particles is partially placed inside a corresponding one of the through-holes. <64> In addition, the sizes of the abrasive particles and the through-holes can satisfy the following relation:

<65> S < Ll < D,

<66> where D is the size of an abrasive particle, Ll is the size of a through-hole in the underside surface of the fixing frame and S is the size of a predetermined portion of the abrasive particle protruding from the underside surface.

<67> The fixing frame can be configured with a solid planar board, the material of which is not specifically limited.

<68> The material of the fixing frame can be one selected from the group consisting of stainless steel, steel, nickel, organic resin and ceramics. Of these materials, a stainless steel sheet is more desirable due to its excellent corrosion resistance, chemical resistance and strength.

<69> The through-holes can be arrayed regularly, in a predetermined pattern, or irregularly.

<70> The shape of the through-holes is not specifically limited, and one selected from the group consisting of a circle, a polygon and combinations thereof can be used.

<7i> A method of forming the through-holes in the fixing frame is not specifically limited, and mechanical processing such as drilling or photo- etching can be used. The photo-etching can be desirable considering high cost and poor size precision of the mechanical processing.

<72> The photo-etching includes applying photo-resist on a stainless steel sheet, removing a plurality of predetermined portions of the photo-resist, in which through-holes will be formed, by exposing the portions to light using a predetermined pattern of film, and forming the through-holes by immersing the resultant board into a chemical solution such as an acid solution, which can dissolve the exposed portions of the stainless steel sheet without dissolving the other portions of the stainless steel sheet covered with the photo^¬ resist .

<73> The merit of the photo-etching is that the through-holes can be formed in a variety of intended shapes and have excellent size precision with a precision error from 1 to 2 _/im(micrometer).

<74> The shape of the through-holes formed in the fixing frame is not specifically limited, and a circle or polygon as shown in FIGS. 4 (a) to (e) can be used. Here, it is important to form the through-holes based on the shape of the abrasive particles shown in FIGS. 5(a)-(c) such that the through-holes can stably receive the abrasive particles.

<75> In FIG. 4, the reference numeral 20 designates the fixing frame, and 21 designates the through-holes. In FIG. 5, the reference numeral 15 designates edge points .

<76> Herein, the term "edge point" refers to a vertex at which three or more faces meet each other.

<77> For example, the through-holes can be triangular shaped when the abrasive particles are in the shape of a tetrahedron or hexahedron, or be quadrangular shaped when the abrasive particles are in the shape of an octahedron, such that the sharp edge points of the abrasive particles can be oriented perpendicular to the flat fixing frame. Then, the sharp edge points of the abrasive particles can be used as blades in abrasive dressing to thereby raise polishing efficiency and increase tool lifetime.

<78> As such, according to the invention, the interval between the abrasive particles can be adjusted since the interval between the through-holes of the fixing frame can be adjusted as desired. Furthermore, dressing performance can also be easily adjusted since the abrasive particles can be arrayed into a predetermined shape, for example, into a regular or irregular shape.

<79> The sizes of the through-holes can be expressed by Relation 1 below:

<80> Ll < L2 Relation 1,

<8i> where Ll is the size of a through-hole in the underside surface of the fixing frame, and L2 is the size of the through-hole in the top surface of the fixing frame.

<82> Here, the sizes of the through-holes and the abrasive particles can be expressed by Relation 2 below: <83> D < L2 Relation 2,

<84> where D is the size of an abrasive particle, and L2 is the size of the through-hole in the top surface of the fixing frame.

<85> Examples of the through-holes satisfying Relations 1 and 2 above are i llustrated in FIG. 6.

<86> Part (a) of FIG. 6 illustrates an example in which the through-holes 21 have a cross section in the shape of an inverted trapezoid, part (b) of FIG. 6 illustrates an example in which the through-holes 21 have a cross section in the shape of a rectangle, and part (c) of FIG. 6 illustrates an example in which the through-holes 21 have a cross section in the shape of a funnel.

<87> In this case, the abrasive particles are more stably located.

<88> The ratio of the size(Ll) of the through-holes in the underside surface of the fixing frame to the size(L2) of the through-holes in the top surface of the fixing frame is determined considering the shape of abrasive particles to be used.

<89> For example, when the abrasive particles are in the shape of an octahedron, the through-holes can be formed with an inverted trapezoidal cross section as shown in FIG. 6 (a) or a funnel-shaped cross section as shown in FIG. 6 (c).

<90> When the through-holes having an inverted trapezoidal cross section as described above are formed, any gaps are not formed between the abrasive particles and the fixing frame and the edge points of the abrasive particles are exposed in the vertical direction while being stably held in place as shown in FIGS. 7 and 8. Likewise, when the through-holes having a funnel- shaped cross section as described above are formed, any gaps are not formed between the abrasive particles and the fixing frame and the edge points of the abrasive particles are exposed in the vertical direction while being stably held in place as shown in as shown in FIG. 9.

<9i> In FIGS. 7 and 8, the reference numeral 30 designates a molding material .

<92> The abrasive particles placed as above cannot escape from the through- holes since the size of the abrasive particles is always greater than the size of the through-holes in the underside surface of the fixing frame. <93> This is one of most important features of the invention, which can fundamentally prevent the abrasive particles from being detached. <94> As an alternative, the fixing tool having the through-holes can be coated with a chemical-resistant material that can impart excellent chemical resistance to the fixing tool. <95> The fixing frame can have a coat thereon, which is formed by coating a chemical resistant resin. The coat can also be formed, via vapor phase growth, of one selected from the group consisting of diamond, Diamond-Like

Carbon (DLC), Ti, Si, W, Ta, Mo, Cr, Zr, mixtures thereof and alloys thereof; or be formed by plating one selected from the group consisting of Rh, Pd, Cr,

Au, Ag, Ti, W, Ta, mixtures thereof and alloys thereof. <96> In some cases, a slurry solution used in a CMP process may contain a strong acid chemical or oxidizing catalyst material in order to facilitate polishing metal circuit lines on a wafer. <97> In a conditioner used in the slurry-using CMP process, abrasive particles are easily detached from the conditioner since the surface of the conditioner is dissolved by a chemical in the slurry. <98> The chemical coated on the surface of the fixing frame can prevent such problems such as a decrease in the lifetime of the conditioner and the risk of scratches owing to the detached abrasive particles. <99> Examples of the chemical-resistant material may include chemical resistant resins such as acrylic resin, epoxy resin and Teflon resin; diamond, DLC, Ti, Si, W, Ta, Mo, Cr, Zr, mixtures thereof and alloys thereof, which are coated by vapor phase growth such as Chemical Vapor Deposition

(CVD) or Physical Vapor Deposition (PVD); and metals having excellent chemical resistance such as Rh, Pd, Cr, Au, Ag, Ti, W, Ta, mixtures thereof and alloys thereof, which are plated by electroplating. <ioo> The chemical-resistant material is not coated on the abrasive particles since it is coated on the fixing frame before the abrasive particles are inserted into the through-holes. Thus, the chemical-resistant material is not detached or separated from a coat when the CMP pad is being dressed, and thereby does not contaminate a wafer.

<ioi> In the prior art, since the chemical-resistant coating is performed only after the abrasive particles are attached, the coated chemical-resistant material remains on the surface of the abrasive particles. Thus, the chemical-resistant material can be detached from the abrasive particles when the dressing is performed with the abrasive particles in direct contact with a pad, thereby contaminating the wafer.

<iO2> According to the invention, the abrasive particles can be one selected from the group consisting of diamond particles, Cubic Boron Nitride (CBN) particles, super abrasive particles, Polycrystal line Diamond (PCD) particles, Polycrystalline Cubic Boron Nitride (PCBN) particles, ceramic particles and resin particles.

<i03> In the present invention, since the fixing frame holds all the abrasive particles in positions such that the edge points of the abrasive particles can protrude perpendicular to a polishing surface, 100% of the abrasive particles participate in dressing the pad.

<iO4> As a result, excellent dressing efficiency is ensured, excellent polishing efficiency can be obtained using a relatively smaller number of abrasive particles, and uniform performance can be obtained using a constant number of abrasive particles participating in dressing the pad.

<iO5> In addition, the cross-sectional shape of the through-holes of the fixing frame is designed in such a fashion that the size of the through-holes is greater than 100% but smaller than 200% of the diameter of the abrasive particles. Specifically, the cross section of the through-holes can have an inverted trapezoidal shape, with one through-hole capable of receiving only one abrasive particle but not two abrasive particles. Due to this shape, the edge points of the octahedron abrasive particles are naturally oriented towards the polishing surface when the abrasive particles are inserted into the through-holes. <iO6> Due to the above-described effects, the use of the abrasive particles can be reduced in order to reduce the manufacturing costs of tools and remarkably improve the reproducibility of products.

<iO7> In the invention, predetermined portions of the abrasive particles exposed from the underside surface of the fixing frame can formed with uniform sizes or different sizes.

<iO8> In the invention, the sizes of the abrasive particles and the through- holes can be expressed by Relation 3 below:

<iO9> S < Ll < D Relation 3,

<iio> where D is the size of an abrasive-particle, Ll is the size of a through-hole in the underside surface of the fixing frame, and S is the size of a predetermined portion of the abrasive particle, which protrudes from the underside surface of the fixing frame.

<iπ> In the invention, when abrasive particles are used with different sizes but with a uniform shape as shown in FIG. 10 (a), the height of portions of the abrasive particles protruding towards the polishing surface can be maintained to be uniform as shown in FIG. 10 (b).

<ii2> As such, uniform dressing efficiency can be always obtained when the abrasive particles are exposed at a uniform height.

<ii3> Conventionally, a conditioner having uniform protrusions cannot be manufactured without using abrasive particles having the same size. The only method of classifying a number of abrasive particles according to the sizes thereof is to sieve the particles with a plurality of sieves of predetermined meshes. It is difficult to obtain abrasive particles having a very limited range of size since a great number of abrasive particles have to be sieved for a long time. In addition, it is substantially impossible to pick out abrasive particles of the same size. Therefore, even if the conditioner having uniform protrusions is manufactured, a very expensive cost is inevitably spent .

<ii4> However, according to the invention, the conditioner having abrasive particles protruding with a uniform height can be manufactured with a cheap cost by forming through-holes of a predetermined size. <ii5> Alternatively, the invention can vary the height of protrusions of abrasive particles by selecting abrasive particles with two or more sizes as shown in FIG. 11, or by designing the through-holes of the fixing frame with two or more sizes as shown in FIG. 12. <ii6> After the abrasive particles are fixed to the fixing frame, a molding material is poured to completely fix the fixing frame and the abrasive particles to each other. <ιi7> Examples of the molding material are not specifically limited, and may include one selected from the group consisting of liquid and solid organic resins, inorganic powders and mixtures thereof. <ii8> A more preferable molding material is liquid or solid organic resin.

This is because a liquid resin of a suitable viscosity can completely fill gaps between the fixing frame and the abrasive particles, thereby more stably fixing the abrasive particles. <ii9> The molding material can be used by mixing a curing agent thereinto or be cured at a temperature 200^°C (degrees Celsius) or less. Since the cured molding material is very hard, it can sufficiently fix the abrasive particles while the CMP pad is being polished and dressed. <12O> Since the molding material also acts as a body of the CMP pad conditioner, finish machining is performed so that the CMP pad conditioner can be mounted on a CMP machine. <i2i> The CMP pad conditioner according to the invention can be manufactured according to the following method: <I22> As shown in FIG. 7 (a), a fixing frame is prepared, and a plurality of through-holes are formed in the fixing frame with a predetermined size, interval and shape. <123> When necessary, the fixing frame having the through-holes can be coated with a chemical-resistant material to have excellent chemical resistance. <124> Then, as shown in FIG. 7 (b) and (c), abrasive particles are seated into the through-holes of the fixing frame. <i25> Next, as shown in FIG. 7 (d), the fixing frame and the abrasive particles are completely fixed to each other using a molding material, thereby manufacturing a final CMP pad conditioner as shown in FIG. 7 (e).

<126> In FIG. 7 (d), the reference numeral 24 designates a mold and 31 designates the molding material which is not yet cured.

<i27> Recently, due to continuous increase in the integration density of semiconductor devices, the circuit line width of wafers is realized at 45 urn (nanometer) or less and is gradually decreasing.

<i28> In addition, corresponding precision management and reproducibility are very important in CMP pad conditioners used in a CMP process, the key process of semiconductor processes. According to the invention, precision management of several micrometers or less can be realized.

<i29> The concept of the invention as described above is applicable not only to CMP pad conditioners but also to other polishing tools.

<130>

[Mode for Invention]

<i3i> The present invention will now be described more fully with reference to Examples.

<132>

<133> Example 1

<i34> Conditioners of the invention and the prior art were prepared, from which a bonding force, deviations in the heights of abrasive particles exposed from a polishing surface at the stage of design and after manufactured, and the number of edge points protruding perpendicular to the polishing surface were measured. The measured results are reported in Table 1 below.

<135> The bonding forces of the abrasive particles were measured using a water jet machine.

<i36> The water jet machine is machine used to cut steel and stone by injecting water under a strong pressure.

<i37> When water is injected onto the abrasive particles under a suitable pressure using the water jet machine, some of the abrasive particles having a relatively weak bonding force are detached from the conditioner. The more the abrasive particles are detached, the more probably scratches may occur due to detached abrasive particles. <I38> Water were injected to an area of 20 mm width and 20 mm length under test conditions including a pressure 45,000 psi, a height 70 mm and a movement rate 700 mm per minute. <139> In Table 1 below, Inventive Sample was a conditioner manufactured by the invention. Specifically, a stainless 304 sheet of a thickness 0.2 mm was prepared as a fixing frame, and through-holes were formed in the fixing frame, with the size Ll of the through-holes in the underside surface of the fixing frame set to 0.12 mm and the size L2 of the through-holes in the top surface of the fixing frame set to 0.38 mm. <14O> Octahedral industrial diamond particles of 80 mesh size were used as abrasive particles. Here, the diamond particles used as the abrasive particles had a diameter 0.18 mm and were counted 300. <i4i> As a molding material, a liquid epoxy resin was used and cured using curing agent, particularly, in an oven at about 50^°C(degrees Celsius) for one

(1) hour in order to finish curing in a short time. <i42> Conventional Sample 1 was a conditioner manufactured by electroplating,

Conventional Sample 2 was a conditioner manufactured by brazing, and

Conventional Sample 3 was a conditioner manufactured by sintering. <i43> The number and size of diamond particles used in Conventional Samples 1 to 3 were the same as those of Inventive Sample. <I44> In Table 1 below, all the heights of the abrasive particles exposed in designing Inventive Sample and Conventional Samples 1 to 3 were 70 ;zni

(micrometer) . <i45> In other words, the size S of the portions of the abrasive particles protruding from the underside of the fixing frame of Inventive Sample were 70 μm(micrometer) .

<146> <I47> <148> <149> <150> <I51> [Table 1] <152>

Note)

<153> IS*: Inventive Sample, CS**: Conventional Sample <154> <155> As reported in Table 1 above, the detachment of the abrasive particles occurred in Conventional Samples 1 to 3, thereby raising the probability of scratches. In contrast, the abrasive particles were not detached from Inventive Sample. Accordingly, it can be appreciated that Inventive Sample is free from the risk of scratches.

<156> In addition, in Inventive Sample, the average height of the exposed portions of the abrasive particles was 67 μm, similar to the designed height, and the deviation in the exposed heights was about 6 % of the average height.

<157> In contrast, in the case of Conventional Samples 1 to 3, the deviations in the exposed heights were about 17 to 55 %, which were a very large value. Based on these comparative results, it can be appreciated that the invention can realize uniform dressing efficiency from the uniformly-exposed abrasive particles.

<158> Furthermore, all the edge points of the abrasive particles of Inventive Sample are oriented perpendicular to the polishing surface. However, in the case of Conventional Samples 1 to 3, only about 61 % or less of the abrasive particles were oriented towards the polishing surface.

<159> <160> Example 2 <I61> In the invention, the efficiency of polishing a CMP pad can be adjusted by varying the number of abrasive particles per unit area. The removal rate of material can also be adjusted according to the polishing efficiency when a wafer is being polished. To examine this, the amounts of the pad worn according to the number of abrasive particles per unit area were measured, and the results are reported in Table 2 below.

<162> Inventive Samples 1 to 5 were conditioners according to the invention. <163> In Table 2 below, octahedral diamond particles were used for Inventive Samples 1 to 3 and fourteen-faced diamond particles were used for Inventive Samples 4 and 5. Inventive Samples were manufactured in the same conditions as Example 1, except that Inventive Sample 1 had 300 abrasive particles per

2 unit cm (square centimeter), Inventive Sample 2 had 400 abrasive particles per

2 unit cm (square centimeter), Inventive Sample 3 had 500 abrasive particles per

2 unit cm (square centimeter), Inventive Sample 4 had 300 abrasive particles per

2 unit cm , and Inventive Sample 5 had 500 abrasive particles per unit

2 cm (square centimeter).

<164> <165> [Table 2] <166>

<I67> As reported in Table 2 above, the invention makes it possible to adjust the number of the abrasive particles per unit area by varying the interval between the through-holes of the fixing frame and thereby to adjust the polishing efficiency.

<168> In addition, it can be appreciated that Inventive Samples 1 to 3 using the octahedral abrasive particles, each of which has a sharp edge point, had better dressing efficiency than Inventive Samples 4 and 5 using the fourteen- faced abrasive particles, each of which has a blunt edge point.

<169>

<I7O> Example 3 <171> From Inventive Sample 2 of Example 2 and Conventional Samples 1 to 3 of Example 1, the removal rate of wafers and the number of scratches were measured using a piece of CMP equipment, which is actually used for semiconductor devices, and the results are reported in Table 3 below.

<172> In Inventive Sample 2, the size Ll of the through-holes in the underside surface of the fixing frame was 0.16 mm, the size L2 of the through-holes in the top surface of the fixing frame was 0.45 mm. The size D of the diamond particles used as the abrasive particles was 0.25 mm, and the size S of the protruded portions of the abrasive particles was 0.1 mm.

<173> The used CMP equipment was a CMP research equipment, provided from M company of Japan. Wafers on which silicone oxide was coated at IOOOOA (angstrom) were used in order to measure the removal rate and the number of scratches of the wafers.

<174> <175> [Table 3]

<176> <177>

<178> Note) <i79> IS*: Inventive Sample, CS**: Conventional Sample

<i80> As reported in Table 3 above, scratches did not occur from the wafers when Inventive Sample 2 was used, but scratches occurred from the wafers when

Conventional Samples 1 to 3 were used.

Claims

[CLAIMS] [Claim 1]

<i82> A chemical mechanical planarization pad conditioner comprising a fixing frame having a plurality of through-holes extending through top and underside surfaces thereof, abrasive particles partially placed in the through-holes, respectively, and a molding material fixing the fixing frame and the abrasive particles to each other,

<183> wherein the through-holes have sizes expressed by Relations 1 and 2 be1ow:

<i84> Ll < L2 Relation 1, and

<i85> D < L2 Relation 2,

<i86> where D is a size of an abrasive particle, Ll is a size of a through- hole in the underside surface of the fixing frame, and L2 is a size of the through-hole in the top surface of the fixing frame,

<187> wherein only one of the abrasive particles is placed in a corresponding one of the through-holes, and

<188> wherein each of the abrasive particles is partially exposed from the underside surface of the fixing frame. [Claim 2]

<i89> The chemical mechanical planarization pad conditioner of claim 1, wherein the abrasive particles and the through-holes have sizes expressed by Relation 3 below:

<i90> S < Ll < D Relation 3,

<i9i> where D is a size of an abrasive particle, Ll is a size of a through- hole in the underside surface of the fixing frame, and S is a size of a predetermined portion of the abrasive particle, which protrudes from the underside surface of the fixing frame. [Claim 3]

<i92> The chemical mechanical planarization pad conditioner of claim 1 or 2, wherein the fixing frame is made of one selected from the group consisting of stainless steel, steel, Ni, organic resin and ceramics. [Claim 4]

<i93> The chemical mechanical planarizat ion pad conditioner of claim 1 or 2, wherein the abrasive particles are one selected from the group consisting of diamond particles, cubic boron nitride particles, super abrasive particles, polycrystalline diamond particles, polycrystalline cubic boron nitride particles, ceramic particles and resin particles. [Claim 5]

<i94> The chemical mechanical planarization pad conditioner of claim 3, wherein the abrasive particles are one selected from the group consisting of diamond particles, cubic boron nitride particles, super abrasive particles, polycrystalline diamond particles, polycrystalline cubic boron nitride particles, ceramic particles and resin particles. [Claim 6]

<i95> The chemical mechanical planarization pad conditioner of claim 1 or 2, wherein the molding material comprises one selected from the group consisting of liquid organic resins, solid organic resins, inorganic powders and mixtures thereof. [Claim 7]

<i96> The chemical mechanical planarization pad conditioner of claim 1 or 2, wherein the fixing frame has a coat thereon, wherein the coat is formed by coating a chemical resistant resin; is formed, via vapor phase growth, of one selected from the group consisting of diamond, diamond-like carbon, Ti, Si, W, Ta, Mo, Cr, Zr, mixtures thereof and alloys thereof; or is formed by plating one selected from the group consisting of Rh, Pd, Cr, Au, Ag, Ti, W, Ta, mixtures thereof and alloys thereof. [Claim 8]

<i97> The chemical mechanical planarization pad conditioner of claim 1 or 2, wherein the through-holes are arrayed regularly or irregularly. [Claim 9]

<i98> The chemical mechanical planarization pad conditioner of claim 1 or 2, wherein the through-holes have one shape selected from the group consisting of a circle, a polygon and combinations thereof. [Claim 10]

<i99> The chemical mechanical planarization pad conditioner of claim 1 or 2, wherein portions of the abrasive particles protruding from the underside surface of the fixing frame have an equal size. [Claim 11]

<2oo> The chemical mechanical planarization pad conditioner of claim 1 or 2, wherein at least part of the abrasive particles are placed in such a fashion that portions of the at least part of the abrasive particles protruding from the underside surface of the fixing frame have different sizes.