CN115106936B - Diamond dressing disc and preparation method thereof - Google Patents

Diamond dressing disc and preparation method thereof Download PDF

Info

Publication number
CN115106936B
CN115106936B CN202210723066.8A CN202210723066A CN115106936B CN 115106936 B CN115106936 B CN 115106936B CN 202210723066 A CN202210723066 A CN 202210723066A CN 115106936 B CN115106936 B CN 115106936B
Authority
CN
China
Prior art keywords
diamond
particles
metal coating
inert
plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202210723066.8A
Other languages
Chinese (zh)
Other versions
CN115106936A (en
Inventor
潘秉锁
杨洋
刘水蓉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan Dinglong Huida Material Technology Co ltd
Original Assignee
China University of Geosciences
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by China University of Geosciences filed Critical China University of Geosciences
Priority to CN202210723066.8A priority Critical patent/CN115106936B/en
Publication of CN115106936A publication Critical patent/CN115106936A/en
Application granted granted Critical
Publication of CN115106936B publication Critical patent/CN115106936B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/12Dressing tools; Holders therefor

Abstract

The invention provides a diamond trimming disc and a preparation method thereof, the trimming disc comprises a diamond trimming disc substrate, inert small particles, a first metal coating, a second metal coating, a third metal coating and diamond particles, wherein the diamond trimming disc substrate comprises an electroplating surface, the inert small particles are deposited on the electroplating surface of the diamond trimming disc substrate, the inert small particles are partially embedded in the first metal coating, the diamond particles are deposited on the first metal coating, and the inert small particles play a role in supporting the diamond particles so that edges or vertexes of the diamond are upward. The invention has the beneficial effects that: the inert small particles change the contact angle between the crystal face of the diamond particles and the plated surface of the trimming disc, so that the edges or vertexes of the diamond particles are upward, the contact area between a diamond cutting edge and the polishing pad in the trimming process is reduced, the pressing depth is increased, and the cutting rate of the polishing pad and the chip removing effect are improved.

Description

Diamond trimming disc and preparation method thereof
Technical Field
The invention belongs to the technical field of electroplating grinding tools, and particularly relates to a diamond trimming disc for chemical mechanical planarization processing of chips and a preparation method thereof.
Background
Chemical mechanical planarization is a technique for smoothing a silicon wafer or other substrate during processing by chemical etching and mechanical forces, and is one of the most important steps in semiconductor manufacturing. In the chemical mechanical planarization process, the removal of the wafer material is realized by means of the relative motion between the polishing pad and the wafer and the chemical erosion action of the polishing solution. The polishing pad has the functions of storing and transporting polishing solution, removing processing residual substances, transferring mechanical load, maintaining polishing environment and the like. With the continuous progress of the chemical mechanical planarization process, the physical and chemical properties of the polishing pad change, which means that residual substances are generated on the surface of the polishing pad, the volume of micropores is reduced, the number of micropores is reduced, the surface roughness is reduced, the molecular recombination phenomenon is generated on the surface, a glazing layer with a certain thickness is formed, and the polishing efficiency and the polishing quality are reduced. Therefore, the chemical mechanical planarization process needs to properly trim the polishing pad by using a diamond trimming disk, remove the glazed layer on the surface of the polishing pad, and increase the surface roughness of the polishing pad, so as to repair the processing performance of the polishing pad and ensure the stability and the repeatability of the polishing process. With the development of the semiconductor industry and the electronic industry, especially with the rapid increase of the demand of integrated circuit chips in recent years in China, the demand of diamond conditioning disks for chemical mechanical planarization is also rapidly increasing.
One important performance criterion for diamond conditioning disks for chemical mechanical planarization is the cut rate to the polishing pad. Electroplated diamond conditioning disks made with hexahedral, hexa-octahedral diamond particles of complete crystal form typically suffer from a too low cutting rate. This is because, during sanding, the diamond particles distributed on the plated surface of the diamond conditioning disk are generally in contact with the plated surface with a certain complete crystal plane, which results in the production of a diamond conditioning disk having a large proportion of the cutting edges of the diamond. When the polishing pad is dressed, because the contact area between the diamond particles and the polishing pad is large, and the depth of pressing the diamond into the polishing pad is small, the dressing efficiency of the polishing pad is low, and the cleaning effect of the polishing pad surface is poor. To increase the cutting rate, two main technical approaches are currently used. First, an electroplated diamond conditioning disk was prepared using crushed diamond. Such a conditioning disk has problems that the cutting rate is rapidly attenuated, and diamond fragments may fall off. And secondly, adopting octahedral diamond or a diamond mixture of octahedral diamond, hexa-octahedral diamond and other complete crystal forms to manufacture an electroplating diamond trimming disk. Because octahedral diamond is expensive, the use of octahedral diamond can significantly increase the cost of making electroplated diamond conditioning disks.
Disclosure of Invention
The invention aims to provide an electroplated diamond dressing disk for chemical mechanical planarization processing of chips and a preparation method thereof, aiming at solving the problem that the electroplated diamond dressing disk has low dressing efficiency on polishing pads.
In a first aspect the present invention provides a diamond conditioning disk comprising: the diamond trimming disk comprises a diamond trimming disk substrate, inert small particles, a first metal coating layer, a second metal coating layer, a third metal coating layer and diamond particles, wherein the diamond trimming disk substrate comprises an electroplating surface, the inert small particles are deposited on the electroplating surface of the diamond trimming disk substrate, the first metal coating layer is partially embedded with the inert small particles, the diamond particles are deposited on the first metal coating layer, and the inert small particles play a fulcrum role on the diamond particles so that edges or vertexes of the diamond are upward;
further, the inert small particles comprise one or more of corundum, silicon carbide, titanium carbide, chromium carbide, silicon dioxide and polytetrafluoroethylene;
further, the particle size of the inert small particles is between 10 and 40 mu m;
further, the height of the inert small particles exposed above the first metal plating layer is between 5 and 20 micrometers;
further, the second metal coating covers the first metal coating and the inert small particles, and is partially embedded with diamond particles, and the height of the diamond particles embedded with the second metal coating is 1/4-1/3 times of the diameter of the diamond particles;
furthermore, the third metal coating covers the second metal coating and the electroplating surface, and is partially embedded with diamond particles, and the height of the diamond particles exposed out of the third metal coating is between 1/5 and 1/3 times of the diameter of the diamond particles;
further, the diameter of the diamond particles ranges from 80 to 350 μm.
In a second aspect, the present invention provides a method of making a diamond conditioning disk comprising the steps of:
s1: carrying out oil removal treatment on a diamond trimming disk substrate, and then fixing a template with meshes and designed sizes and arranged patterns on an electroplating surface of the diamond trimming disk substrate;
s2: placing the diamond trimming disk substrate subjected to pre-plating treatment into a plating bath, using impact plating, and then using normal current density for pre-plating;
s3: uniformly dispersing the inert small particles on the surface of the template with meshes by using a sanding tool, wherein a part of the inert small particles can fall into the meshes of the template to be contacted with the diamond trimming disk substrate, and the projected area of the inert small particles falling into each mesh accounts for 5-20% of the area of a single mesh;
s4: electroplating the first metal coating layer with normal current density until the inert particles are exposed above the first metal coating layer, wherein the height of the inert particles is between 5 and 20 mu m;
s5: using a sanding tool to uniformly disperse diamond particles on the first metal coating partially embedded with the small inert particles, then electroplating a second metal coating until the diamond particles are embedded by the second metal coating to be 1/4-1/3 times of the diameter of the diamond particles;
s6: taking out of the groove, removing the template with meshes, carrying out electrochemical activation, then re-putting the semi-finished diamond trimming disc subjected to inert small particle composite plating and diamond sand coating in the steps S1-S5 into the groove, electroplating at normal current density until the height of the diamond particles exposed out of the third metal coating is 1/5-1/3 times of the diameter of the diamond particles, and taking out of the groove to obtain the diamond trimming disc;
further, the sanding tool is a tool comprising mechanical stirring, air stirring or a vibration device;
further, the pre-plating treatment comprises one or more of the following steps: chemical cleaning, electrochemical oil removal and electrochemical activation.
The invention has the beneficial effects that: the inert small particles are compositely electroplated on the base of the diamond trimming disk, so that the contact angle between the crystal face of the diamond particles and the plated surface of the trimming disk is effectively changed, the edge or the vertex of the diamond particles in a complete crystal form is upward, the contact area between a diamond cutting edge and a polishing pad in the trimming process is reduced, the pressing depth is increased, and the cutting rate of the polishing pad and the chip removing effect are improved.
Drawings
FIG. 1 is a partial cross-sectional view of a diamond conditioning disk substrate after mounting a template in a method of making a diamond conditioning disk in accordance with an embodiment of the present invention;
FIG. 2 is a partial cross-sectional view of a diamond conditioning disk substrate after electroplating with small inert particles in a method of making a diamond conditioning disk in accordance with an embodiment of the present invention;
FIG. 3 is a schematic diagram showing the diamond-particle positions after sanding of diamond particles is completed in the method of manufacturing a diamond conditioning disk according to an embodiment of the present invention;
FIG. 4 is a schematic view of a portion of a diamond conditioning disk after sand electroplating on diamond particles is completed in a method for manufacturing a diamond conditioning disk according to an embodiment of the present invention;
FIG. 5 is a schematic view of a portion of a finished diamond conditioning disk illustrating the method of making a diamond conditioning disk according to an embodiment of the present invention.
In the figure: 1-diamond dressing disk substrate, 2-mesh template, 3-inert small particles, 41-first metal coating, 42-second metal coating, 43-third metal coating, and 5-diamond particles.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be further described with reference to the accompanying drawings. The following presents a simplified summary of the invention in order to provide a basic understanding of the invention and to provide a basic understanding of the invention.
As mentioned above, the diamond particles on the plated surface of the existing diamond conditioning disk usually work in contact with the plated surface with a certain complete crystal plane, resulting in that most of the cutting edges of the diamond conditioning disk are crystal planes of the diamond particles, the contact area of the crystal planes of the diamond particles and the polishing pad is large, and the pressing depth is low, thus resulting in low conditioning efficiency of the diamond conditioning disk and poor cleaning capability of the polishing pad.
In order to solve the problems, the invention provides a diamond dressing disk containing small inert particles, wherein a layer of small inert particles is electroplated on an electroplating surface of a base body of the diamond dressing disk, and the small inert particles play a role of supporting points for diamond particles which are electroplated subsequently, so that diamond edges or vertexes which are electroplated subsequently are upward, compared with the diamond dressing disk without small particles, the diamond dressing disk reduces the contact area between a diamond cutting edge and a polishing pad in the dressing process, and compared with crushed diamond, the diamond dressing disk reduces the risk of falling off of the diamond particles.
In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, embodiments accompanying figures are described in detail below.
The embodiment of the invention provides a preparation method of a diamond trimming disk, which comprises the following steps:
s1: the diamond conditioning disk substrate was degreased and then a mesh template with a designed size and pattern was attached to its plated surface, as shown in fig. 1.
In the present invention, the diamond conditioning disk substrate may be in the shape of a disk, and may be optionally configured in other shapes suitable for conditioning a polishing pad, such as: square, oval, etc., and the material can be carbon steel or stainless steel, or other high-hardness metal materials, such as: nichrome, chromium alloy, titanium alloy, etc., or high hardness non-metallic materials such as: ceramic, the above materials are only suitable choices for the diamond conditioning disk and should not be limited to the above materials.
In the present invention, the mesh-equipped stencil having a designed size and an arrangement pattern is not particularly limited and may be selected according to the actual circumstances.
S2: putting the diamond trimming disk substrate subjected to the plating pretreatment into a plating bath, using impact plating, and then using normal current density for pre-plating.
In the present invention, the pre-plating treatment includes one or more of chemical cleaning, electrochemical degreasing and electrochemical activation treatment, and other methods suitable for the pre-plating treatment in the art are also suitable for the present invention, and should not be limited to the above methods.
In the invention, the current density of the impact plating is 2.0-2.4A/dm 2 The normal current density is 1.4-1.8A/dm 2 Preferably, in the present invention, the impact plating current density is 2.2A/dm 2 The normal current density is 1.6A/dm 2
In the invention, the impact plating electroplating time can be selected from 1-20 min, preferably, the impact plating time can be selected from 1-2 min; the normal current density preplating time can be selected from 10-40 min, and preferably, the normal current density preplating time can be selected from 10-15 min.
S3: as shown in fig. 2, the inert small particles are uniformly dispersed on the surface of the template with meshes by using a sanding tool, wherein a part of the inert small particles fall into the meshes of the template to contact with the diamond conditioner disk substrate, and the projected area of the inert small particles falling into each mesh accounts for 5 to 20 percent of the area of each mesh.
In the present invention, the sanding tool includes one or more of mechanical stirring, air stirring or a tool including a vibration device, and other suitable sanding tools in the art are also applicable to the present invention, and should not be limited to the above tools.
In the present invention, the inert small particles include one or more of corundum, silicon carbide, titanium carbide, chromium carbide, silicon dioxide, and polytetrafluoroethylene, and in the present invention, it is preferable that the inert small particles are corundum in terms of hardness and particle morphology.
S4: the height of the first metal coating layer from the inert particles to the first metal coating layer is between 5 and 20 μm.
According to the invention, the inert small particles are partially embedded in the first metal coating, and the height of the inert small particles exposed out of the first metal coating is controlled within a certain range, so that a good supporting effect can be realized, the diamond particles in the obtained diamond trimming disk show upward edges or upward vertexes, and when the height of the inert small particles exposed out of the first metal coating is lower than 5 mu m, the height of the inert small particles protruding out of the first metal coating is slightly lower, so that a good supporting effect cannot be realized; when the height of the inert small particles exposed on the first metal coating is higher than 20 micrometers, the inert small particles are only 10-40 micrometers in particle size, and if the height of the inert small particles exposed on the first metal coating is higher, the bonding force between the inert small particles and the first metal coating is weakened, so that the phenomenon that diamond particles are loosened and fall off easily occurs in the using process; preferably, the height of the small inert particles exposed on the first metal plating layer is between 10 and 18 μm, and particularly preferably, the height of the small inert particles exposed on the first metal plating layer is between 10 and 15 μm.
In the invention, the particle size of the small inert particles is between 10 and 40 microns, and if the particle size of the small inert particles is less than 10 microns, the particle size is small, the process is difficult to control during electroplating, the proper height is difficult to expose on the first metal coating, and the purpose of supporting the diamond particles cannot be realized; if the particle size of the inert small particles is larger than 40 μm, the exposed height is too high, the wrapping and inlaying fastness of the inert small particles on the first metal coating is deteriorated, and the diamond particles on the upper part of the inert small particles can be loosened in the using process; preferably, the particle size of the small inert particles in the present invention is between 15 and 25 μm, and particularly preferably, the particle size of the small inert particles in the present invention is 20 μm.
In the invention, on the other hand, the purpose that the diamond particle edge faces upwards or the vertex points upwards in the diamond trimming disk is realized by controlling the area proportion of the projection area of the small inert particles in a single mesh to be between 5% and 20%, if the area proportion of the projection area of the small inert particles in the single mesh is lower than 5%, the small inert particles cannot play a supporting role, the distance between the small inert particles is too large and larger than the particle size of the diamond particles, so that a large number of diamond particles are still distributed on the first metal coating in a crystal face-up manner, and the trimming efficiency is reduced; if the projected area of the inert small particles accounts for more than 20% of the area of a single mesh, the distribution density of the inert small particles is too high, the space between the inert small particles is too small, the inert small particles can be regarded as a plane, and the diamond particles are distributed on the plane of the inert small particles in a mode that the crystal faces are still upwards, so that the dressing efficiency is also reduced; preferably, the projected area of the small inert particles in the present invention is 8 to 18% of the area of the single mesh.
In the present invention, it is preferable that the shape of the inert small particles is selected from a spherical shape and an equiaxed polyhedral shape, in view of the ease of high control of the exposure of the inert small particles to the first metal plating layer.
S5: as shown in fig. 3 and 4, diamond particles are uniformly dispersed on a first metal coating partially encasing inert small particles using a sanding tool, followed by electroplating of a second metal coating until the diamond particles are encased by the second metal coating to between 1/4 and 1/3 times the diameter of the diamond.
In the present invention, the angle between the crystal plane of the diamond particle on the side facing the plating surface and the first metal plating layer is 10 to 30 ° in view of a good cutting height and cutting rate.
In the invention, the second metal coating is used for temporarily fixing the diamond particles, and the distribution state and the relative position of the diamond particles are fixed before the template is removed by controlling the height of the diamond particles partially embedded by the second metal coating; if the diamond particles are embedded by the second metal coating layer to less than 1/4 of the diamond diameter, the force between the diamond particles and the second metal coating layer becomes weak, which may cause the diamond particles to be dropped or dislocated in the subsequent template removing operation, and if the diamond particles are embedded by the second metal coating layer to more than 1/3 of the diamond diameter, which may cause the diamond conditioning disk to fail to maintain a good cutting height in the subsequent plating.
S6: and (3) discharging, removing the template with meshes, carrying out electrochemical activation, then re-feeding the semi-finished diamond dressing disc subjected to inert small particle composite plating and diamond sand coating in the steps S1-S5 into a groove, electroplating at normal current density until the height of the diamond particles exposed out of the third metal coating is 1/5-1/3 times of the diameter of the diamond particles, and discharging to obtain the diamond dressing disc shown in the figure 5.
In the invention, the third metal coating is partially embedded with diamond particles, wherein the exposed height of the diamond particles exposed out of the third metal coating is between 1/5 and 1/3 times of the diameter of the diamond particles, if the exposed height is less than 1/5 times of the diameter of the diamond particles, the edge height of the diamond trimming disc is lower, the trimming effect is poorer, and if the exposed height is more than 1/3 times of the diameter of the diamond particles, the risk of dropping the diamond particles is increased, and the polished wafer is scratched.
In the present invention, the diamond particles are regular in shape and are polyhedral, such as hexahedral, octahedral, hexa-octahedral, rhombohedral, icosahedral, prismatic or truncated pyramid structures, and in view of cost and difficulty in obtaining, one of hexahedral and hexa-octahedral diamond particles is preferably used in the present invention, and hexa-octahedral diamond particles are particularly preferably used; in the present invention, the diameter of the diamond particles is in the range of 80 to 350. Mu.m.
In the present invention, the first metal plating layer, the second metal plating layer and the third metal plating layer are made of the same or different plating materials, and may be one or more selected from nickel alloy, chromium alloy, nickel-chromium alloy and nickel-cobalt alloy.
Example 1
Electroplated diamond conditioning disk with diamond particle diameter of 180 mu m
Diamond conditioning disk substrate treatment
Firstly, processing a diamond trimming disc substrate, and fixing a template with meshes on an electroplating surface of the diamond trimming disc substrate after chemical degreasing, wherein the size of the meshes is 240 mu m, and the space between the meshes is 380 mu m; assembling a tool clamp, adopting cathode degreasing and anode degreasing for 2 minutes respectively, wherein the current density is 5A/dm 2 Then carrying out electrochemical activation after hot water washing and cold water washing, wherein the activation current density is 15A/dm 2 The time is 1.5min, and then the diamond trimming disk substrate is quickly electrified into a groove after being washed by tap water and rinsed by distilled water;
(II) inert small particle electroplating
At 2.2A/dm 2 Current density impact plating of (2) for 2min, followed by 1.6A/dm 2 Pre-plating for 15min; sanding, dropping corundum particles with a diameter of 20 μm into the meshes of the template at a rate of 1.6A/dm 2 Electroplating for 0.5h to obtain a first metal coating;
(III) electroplating of Diamond particles
Uniformly distributing 180 mu m hexa-octahedron diamond particles on a template, rotating the diamond trimming disk substrate for one circle according to a tilting angle of 20 degrees, ensuring that each mesh contains diamond particles at a rate of 1.6A/dm 2 Electroplating for 3 hours to obtain a second metal coating; removing sand after sand coating, removing template, reactivating diamond particles by the electrochemical activation process, and charging into the tank to obtain the final product1.6A/dm 2 The current density is thickened and plated for 3.5 hours to obtain a third metal plating layer; then, the jig was disassembled to obtain an electroplated diamond conditioning disk having a grain size of 180 μm.
Comparative example 1
The preparation method is the same as that in example 1 above except that the plating contains no inert small particles.
Comparative example 2
The production method was the same as that in comparative example 1 except that the above-described hexa-octahedral diamondoid particles were replaced with diamond crumbles.
Cutting rate
The diamond conditioning disks of the prepared examples and comparative examples were subjected to an on-machine test, and the cutting rate was evaluated under the following test conditions:
the testing machine is AMAT Refelxion (Modify 5 Zone);
the polishing PAD is a DH3000 series PAD controlled by Dinglong;
the polishing solution was ANJI3060 (1 2 O 2 % = 1%), flow rate 150mL/min;
the diamond conditioning disks were the diamond conditioning disks prepared in example 1 and comparative examples 1 and 2;
the wafers (wafers) used were pattern wafers: semitech 754, cu Blanket wafer PreThickness 10KA.
The change in weight of the pad was recorded and the cut rate was calculated.
Figure BDA0003712348710000101
The electroplated diamond conditioning disk obtained in example 1 has uniform diamond distribution, the number of diamond particles with crystal planes parallel to the plated surface of the conditioning disk substrate is obviously reduced, the cutting rate is far higher than that of a diamond conditioning disk without inert small particles, although the initial cutting rate is slightly lower than that of a crushed diamond conditioning disk, the cutting rate attenuation is less, and the electroplated diamond conditioning disk still has certain cutting capacity after being operated for a long time of 20 hours.
The diamond conditioning disk and the method for making the same according to the present invention are described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.

Claims (3)

1. A method of making a diamond conditioning disk comprising the steps of:
s1: carrying out oil removal treatment on a diamond trimming disc substrate, and then fixing a template with meshes and designed sizes and arranged patterns on an electroplating surface of the diamond trimming disc substrate;
s2: placing the diamond trimming disk substrate subjected to pre-plating treatment into a plating bath, using impact plating, and then using normal current density for pre-plating;
s3: uniformly dispersing the inert small particles on the surface of the template with meshes by using a sanding tool, wherein a part of the inert small particles can fall into the meshes of the template to be contacted with the diamond trimming disk substrate, and the projected area of the inert small particles falling into each mesh accounts for 5-20% of the area of a single mesh;
s4: electroplating the first metal coating layer at normal current density until the inert particles are exposed above the first metal coating layer to a height of 5-20 μm;
s5: using a sanding tool to uniformly disperse diamond particles on the first metal coating partially embedded with the small inert particles, then electroplating a second metal coating until the diamond particles are embedded by the second metal coating to be 1/4-1/3 times of the diameter of the diamond particles;
s6: and (3) discharging, removing the template with meshes, carrying out electrochemical activation, then re-feeding the semi-finished diamond dressing disc subjected to inert small particle composite plating and diamond sand plating in S1-S5 into a groove, electroplating a third metal coating at normal current density until the height of the diamond particles exposed out of the third metal coating is 1/5-1/3 times of the diameter of the diamond particles, and discharging to obtain the diamond dressing disc.
2. The method of making a diamond conditioning disk according to claim 1, wherein said sanding tool is a tool comprising mechanical agitation, air agitation, or a vibrating device.
3. The method of making a diamond conditioning disk according to claim 1, wherein said pre-plating treatment comprises one or more of the following steps: chemical cleaning, electrochemical degreasing and electrochemical activation.
CN202210723066.8A 2022-06-24 2022-06-24 Diamond dressing disc and preparation method thereof Active CN115106936B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210723066.8A CN115106936B (en) 2022-06-24 2022-06-24 Diamond dressing disc and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210723066.8A CN115106936B (en) 2022-06-24 2022-06-24 Diamond dressing disc and preparation method thereof

Publications (2)

Publication Number Publication Date
CN115106936A CN115106936A (en) 2022-09-27
CN115106936B true CN115106936B (en) 2023-03-28

Family

ID=83327691

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210723066.8A Active CN115106936B (en) 2022-06-24 2022-06-24 Diamond dressing disc and preparation method thereof

Country Status (1)

Country Link
CN (1) CN115106936B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116652825B (en) * 2023-07-24 2023-11-10 北京寰宇晶科科技有限公司 Diamond CMP polishing pad trimmer and preparation method thereof

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4114322A (en) * 1977-08-02 1978-09-19 Harold Jack Greenspan Abrasive member
GB2038214A (en) * 1978-12-21 1980-07-23 Dianite Coatings Ltd Abrasive tool
EP0950470A2 (en) * 1998-04-13 1999-10-20 Toyoda Koki Kabushiki Kaisha Abrasive tool and the method of producing the same
EP1331064A1 (en) * 2002-01-25 2003-07-30 WENDT GmbH Method to manufacture a grinding tool with galvanically bonded abrasive bodies
TW201532734A (en) * 2014-02-18 2015-09-01 Kinik Co Chemical mechanical polishing conditioner with high performance
CN109963690A (en) * 2016-11-16 2019-07-02 丰田万磨株式会社 The molding electricity consumption depositing diamond trimmer and its manufacturing method of gear grinding shape of threads grinding tool
CN110125828A (en) * 2019-05-28 2019-08-16 蚌埠学院 A kind of preparation method of diamond tool
CN110480530A (en) * 2019-07-26 2019-11-22 扬州续笙新能源科技有限公司 A kind of cutting silicon wafer self-sharpening diamond wire and its manufacturing method and application method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3013235B2 (en) * 1996-11-01 2000-02-28 株式会社呉英製作所 Diamond cutting blade for steel
JP2001071267A (en) * 1999-09-02 2001-03-21 Allied Material Corp Pad conditioning diamond dresser and its manufacturing method
JP3797948B2 (en) * 2002-03-28 2006-07-19 株式会社ノリタケスーパーアブレーシブ Diamond tools
JP2006130586A (en) * 2004-11-04 2006-05-25 Mitsubishi Materials Corp Cmp conditioner and manufacturing method thereof
JP2006247753A (en) * 2005-03-08 2006-09-21 Kurisutekku Kk Diamond brazed tool
CN101870086A (en) * 2009-04-27 2010-10-27 三菱综合材料株式会社 CMP trimmer and manufacture method thereof
MX365562B (en) * 2013-02-26 2019-06-05 Kwh Mirka Ltd A method to provide an abrasive product surface and abrasive products thereof.
CN104209863A (en) * 2013-06-03 2014-12-17 宁波江丰电子材料股份有限公司 Polishing pad finisher, manufacturing method of polishing pad finisher, polishing pad finishing device and polishing system
CN213106374U (en) * 2019-12-31 2021-05-04 青岛雨荣研磨材料有限公司 Novel coated abrasive tool

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4114322A (en) * 1977-08-02 1978-09-19 Harold Jack Greenspan Abrasive member
GB2038214A (en) * 1978-12-21 1980-07-23 Dianite Coatings Ltd Abrasive tool
EP0950470A2 (en) * 1998-04-13 1999-10-20 Toyoda Koki Kabushiki Kaisha Abrasive tool and the method of producing the same
EP1331064A1 (en) * 2002-01-25 2003-07-30 WENDT GmbH Method to manufacture a grinding tool with galvanically bonded abrasive bodies
TW201532734A (en) * 2014-02-18 2015-09-01 Kinik Co Chemical mechanical polishing conditioner with high performance
CN109963690A (en) * 2016-11-16 2019-07-02 丰田万磨株式会社 The molding electricity consumption depositing diamond trimmer and its manufacturing method of gear grinding shape of threads grinding tool
CN110125828A (en) * 2019-05-28 2019-08-16 蚌埠学院 A kind of preparation method of diamond tool
CN110480530A (en) * 2019-07-26 2019-11-22 扬州续笙新能源科技有限公司 A kind of cutting silicon wafer self-sharpening diamond wire and its manufacturing method and application method

Also Published As

Publication number Publication date
CN115106936A (en) 2022-09-27

Similar Documents

Publication Publication Date Title
WO2009091140A2 (en) Conditioner for chemical mechanical planarization pad
KR100796184B1 (en) Abrasive tools made with a self-avoiding abrasive grain array
JP3527448B2 (en) Dresser for CMP polishing cloth and its manufacturing method
JP2896657B2 (en) Dresser and manufacturing method thereof
US20060201281A1 (en) High precision multi-grit slicing blade
CN115106936B (en) Diamond dressing disc and preparation method thereof
JPH05245762A (en) Abrasive article and manufacture thereof
JP2014079879A (en) Corrosion-resistant cmp conditioning tools and methods for making and using same
JPS6080562A (en) Electrodeposited grinding wheel
JPH0639729A (en) Precision grinding wheel and its manufacture
JP2006130586A (en) Cmp conditioner and manufacturing method thereof
US4219004A (en) Flexible, self-supporting blade for cutting electronic crystals and substrates or the like
CN113953988B (en) Grinding wheel with controllable abrasive particle spacing and ordered arrangement and preparation method thereof
KR20110124988A (en) Cmp pad conditioner and its manufacutring method
JP2009136926A (en) Conditioner and conditioning method
CN108588799B (en) Sand feeding device of electroplated grinding wheel and preparation method
JPH1177535A (en) Conditioner and its manufacture
KR100558277B1 (en) Manufacturing method of a diamond grinding tool
JP3802884B2 (en) CMP conditioner
JP5478209B2 (en) Polishing tool and method for manufacturing polishing tool
JPH08309666A (en) Electrodeposition grinding wheel and manufacture thereof
JP3609059B2 (en) Dresser for CMP processing
KR102151168B1 (en) A meth0d for manufacturing the tool elctro-deposited by diamond
KR200303718Y1 (en) CMP pad conditioner
KR100908273B1 (en) Method of Making Diamond Grinding Tool

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20240315

Address after: A6 Factory Building, Phase I Project of Diamond Tool Export Processing Production Base, Block 25MC, Export Processing Zone, Wuhan Economic and Technological Development Zone, Wuhan, Hubei Province, 430000

Patentee after: Wuhan Dinglong Huida Material Technology Co.,Ltd.

Country or region after: China

Address before: 430000 Lu Mill Road, Hongshan District, Wuhan, Hubei Province, No. 388

Patentee before: CHINA University OF GEOSCIENCES (WUHAN CITY)

Country or region before: China