JP7271389B2 - 成膜装置、成膜方法、および電子デバイスの製造方法 - Google Patents

成膜装置、成膜方法、および電子デバイスの製造方法 Download PDF

Info

Publication number
JP7271389B2
JP7271389B2 JP2019189549A JP2019189549A JP7271389B2 JP 7271389 B2 JP7271389 B2 JP 7271389B2 JP 2019189549 A JP2019189549 A JP 2019189549A JP 2019189549 A JP2019189549 A JP 2019189549A JP 7271389 B2 JP7271389 B2 JP 7271389B2
Authority
JP
Japan
Prior art keywords
substrate
mask
film
film forming
support unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019189549A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020111822A5 (enExample
JP2020111822A (ja
Inventor
俊介 岡部
健太郎 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Tokki Corp
Original Assignee
Canon Tokki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Tokki Corp filed Critical Canon Tokki Corp
Publication of JP2020111822A publication Critical patent/JP2020111822A/ja
Publication of JP2020111822A5 publication Critical patent/JP2020111822A5/ja
Application granted granted Critical
Publication of JP7271389B2 publication Critical patent/JP7271389B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • C23C16/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2019189549A 2019-01-11 2019-10-16 成膜装置、成膜方法、および電子デバイスの製造方法 Active JP7271389B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2019-0004235 2019-01-11
KR1020190004235A KR102257008B1 (ko) 2019-01-11 2019-01-11 성막 장치, 성막 방법 및 전자 디바이스 제조방법

Publications (3)

Publication Number Publication Date
JP2020111822A JP2020111822A (ja) 2020-07-27
JP2020111822A5 JP2020111822A5 (enExample) 2022-01-31
JP7271389B2 true JP7271389B2 (ja) 2023-05-11

Family

ID=71581089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019189549A Active JP7271389B2 (ja) 2019-01-11 2019-10-16 成膜装置、成膜方法、および電子デバイスの製造方法

Country Status (3)

Country Link
JP (1) JP7271389B2 (enExample)
KR (2) KR102257008B1 (enExample)
CN (1) CN111434798B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7585088B2 (ja) 2021-02-26 2024-11-18 キヤノントッキ株式会社 成膜装置
JP7723531B2 (ja) * 2021-08-23 2025-08-14 キヤノントッキ株式会社 真空装置、電子デバイスの製造装置
KR102889256B1 (ko) 2021-08-25 2025-11-20 세메스 주식회사 공정 처리 유닛 및 이를 구비하는 기판 처리 장치
JP7771621B2 (ja) * 2021-10-19 2025-11-18 東京エレクトロン株式会社 基板搬送装置及び基板搬送方法
JP7535990B2 (ja) * 2021-11-26 2024-08-19 キヤノントッキ株式会社 成膜装置、膜厚測定方法及び電子デバイスの製造方法
JP2023103008A (ja) * 2022-01-13 2023-07-26 キヤノントッキ株式会社 成膜装置、成膜方法及び電子デバイスの製造方法
CN120677872A (zh) * 2023-02-08 2025-09-19 铣益系统有限责任公司 用于提高基板位置的测量精度的沉积装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014019954A (ja) 2012-07-16 2014-02-03 Samsung Display Co Ltd 有機層蒸着装置、これを用いる有機発光ディスプレイ装置の製造方法、及びこれによって製造された有機発光ディスプレイ装置
JP2018525839A (ja) 2015-08-21 2018-09-06 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 基板を移送するための装置、基板を真空処理するための装置、及び磁気浮揚システムを保守するための方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4609754B2 (ja) * 2005-02-23 2011-01-12 三井造船株式会社 マスククランプの移動機構および成膜装置
JP4609755B2 (ja) * 2005-02-23 2011-01-12 三井造船株式会社 マスク保持機構および成膜装置
JP5783811B2 (ja) * 2010-07-06 2015-09-24 キヤノン株式会社 成膜装置
KR101783457B1 (ko) * 2012-06-22 2017-10-10 주식회사 원익아이피에스 마스크 홀더장치 및 이를 포함하는 증착장치
KR20150071534A (ko) * 2013-12-18 2015-06-26 삼성디스플레이 주식회사 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치 제조 방법
JP6582059B2 (ja) * 2015-04-01 2019-09-25 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated アライナ構造及びアライン方法
JP6585191B2 (ja) * 2016-05-18 2019-10-02 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated キャリア又は基板を搬送するための装置及び方法
JP6591657B2 (ja) * 2017-02-24 2019-10-16 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 真空システムで使用するためのキャリア、真空処理のためのシステム、及び基板の真空処理のための方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014019954A (ja) 2012-07-16 2014-02-03 Samsung Display Co Ltd 有機層蒸着装置、これを用いる有機発光ディスプレイ装置の製造方法、及びこれによって製造された有機発光ディスプレイ装置
JP2018525839A (ja) 2015-08-21 2018-09-06 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 基板を移送するための装置、基板を真空処理するための装置、及び磁気浮揚システムを保守するための方法

Also Published As

Publication number Publication date
KR102594630B1 (ko) 2023-10-25
CN111434798B (zh) 2023-08-25
KR102257008B1 (ko) 2021-05-26
JP2020111822A (ja) 2020-07-27
CN111434798A (zh) 2020-07-21
KR20200087636A (ko) 2020-07-21
KR20210062607A (ko) 2021-05-31

Similar Documents

Publication Publication Date Title
JP7271389B2 (ja) 成膜装置、成膜方法、および電子デバイスの製造方法
JP7191229B2 (ja) アライメント機構、アライメント方法、成膜装置及び成膜方法
KR102776950B1 (ko) 얼라인먼트 기구, 얼라인먼트 방법, 성막장치 및 성막 방법
JP7499571B2 (ja) 成膜装置、電子デバイスの製造装置、成膜方法および電子デバイスの製造方法
TWI896564B (zh) 成膜裝置,電子裝置的製造裝置,成膜方法及電子裝置的製造方法
CN111434795A (zh) 成膜装置、成膜方法以及电子器件的制造装置和制造方法
CN112813381A (zh) 成膜装置
CN112824554A (zh) 成膜装置
CN111434797B (zh) 成膜装置以及电子器件的制造装置
JP7379072B2 (ja) 成膜装置、電子デバイスの製造装置、成膜方法及び電子デバイスの製造装置
TWI872129B (zh) 對準裝置,對準方法,成膜裝置及成膜方法
JP7220136B2 (ja) 成膜装置及び電子デバイスの製造装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220121

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220121

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20221122

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20221206

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230112

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230411

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230426

R150 Certificate of patent or registration of utility model

Ref document number: 7271389

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150