KR102257008B1 - 성막 장치, 성막 방법 및 전자 디바이스 제조방법 - Google Patents
성막 장치, 성막 방법 및 전자 디바이스 제조방법 Download PDFInfo
- Publication number
- KR102257008B1 KR102257008B1 KR1020190004235A KR20190004235A KR102257008B1 KR 102257008 B1 KR102257008 B1 KR 102257008B1 KR 1020190004235 A KR1020190004235 A KR 1020190004235A KR 20190004235 A KR20190004235 A KR 20190004235A KR 102257008 B1 KR102257008 B1 KR 102257008B1
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- South Korea
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- mask
- substrate
- support unit
- mask support
- film forming
- Prior art date
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- H01L51/0008—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H01L51/56—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020190004235A KR102257008B1 (ko) | 2019-01-11 | 2019-01-11 | 성막 장치, 성막 방법 및 전자 디바이스 제조방법 |
| JP2019189549A JP7271389B2 (ja) | 2019-01-11 | 2019-10-16 | 成膜装置、成膜方法、および電子デバイスの製造方法 |
| CN201911161956.9A CN111434798B (zh) | 2019-01-11 | 2019-11-25 | 成膜装置、成膜方法以及电子器件的制造方法 |
| KR1020210064739A KR102594630B1 (ko) | 2019-01-11 | 2021-05-20 | 성막 장치, 성막 방법 및 전자 디바이스 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020190004235A KR102257008B1 (ko) | 2019-01-11 | 2019-01-11 | 성막 장치, 성막 방법 및 전자 디바이스 제조방법 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020210064739A Division KR102594630B1 (ko) | 2019-01-11 | 2021-05-20 | 성막 장치, 성막 방법 및 전자 디바이스 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20200087636A KR20200087636A (ko) | 2020-07-21 |
| KR102257008B1 true KR102257008B1 (ko) | 2021-05-26 |
Family
ID=71581089
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020190004235A Active KR102257008B1 (ko) | 2019-01-11 | 2019-01-11 | 성막 장치, 성막 방법 및 전자 디바이스 제조방법 |
| KR1020210064739A Active KR102594630B1 (ko) | 2019-01-11 | 2021-05-20 | 성막 장치, 성막 방법 및 전자 디바이스 제조방법 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020210064739A Active KR102594630B1 (ko) | 2019-01-11 | 2021-05-20 | 성막 장치, 성막 방법 및 전자 디바이스 제조방법 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7271389B2 (enExample) |
| KR (2) | KR102257008B1 (enExample) |
| CN (1) | CN111434798B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7585088B2 (ja) | 2021-02-26 | 2024-11-18 | キヤノントッキ株式会社 | 成膜装置 |
| JP7723531B2 (ja) * | 2021-08-23 | 2025-08-14 | キヤノントッキ株式会社 | 真空装置、電子デバイスの製造装置 |
| KR102889256B1 (ko) | 2021-08-25 | 2025-11-20 | 세메스 주식회사 | 공정 처리 유닛 및 이를 구비하는 기판 처리 장치 |
| JP7771621B2 (ja) * | 2021-10-19 | 2025-11-18 | 東京エレクトロン株式会社 | 基板搬送装置及び基板搬送方法 |
| JP7535990B2 (ja) * | 2021-11-26 | 2024-08-19 | キヤノントッキ株式会社 | 成膜装置、膜厚測定方法及び電子デバイスの製造方法 |
| JP2023103008A (ja) * | 2022-01-13 | 2023-07-26 | キヤノントッキ株式会社 | 成膜装置、成膜方法及び電子デバイスの製造方法 |
| CN120677872A (zh) * | 2023-02-08 | 2025-09-19 | 铣益系统有限责任公司 | 用于提高基板位置的测量精度的沉积装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101783457B1 (ko) * | 2012-06-22 | 2017-10-10 | 주식회사 원익아이피에스 | 마스크 홀더장치 및 이를 포함하는 증착장치 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4609754B2 (ja) * | 2005-02-23 | 2011-01-12 | 三井造船株式会社 | マスククランプの移動機構および成膜装置 |
| JP4609755B2 (ja) * | 2005-02-23 | 2011-01-12 | 三井造船株式会社 | マスク保持機構および成膜装置 |
| JP5783811B2 (ja) * | 2010-07-06 | 2015-09-24 | キヤノン株式会社 | 成膜装置 |
| KR20140010303A (ko) * | 2012-07-16 | 2014-01-24 | 삼성디스플레이 주식회사 | 유기층 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
| KR20150071534A (ko) * | 2013-12-18 | 2015-06-26 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치 제조 방법 |
| JP6582059B2 (ja) * | 2015-04-01 | 2019-09-25 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | アライナ構造及びアライン方法 |
| KR20180042380A (ko) * | 2015-08-21 | 2018-04-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판의 운송을 위한 장치, 기판의 진공 프로세싱을 위한 장치, 및 자기 부상 시스템의 유지보수를 위한 방법 |
| JP6585191B2 (ja) * | 2016-05-18 | 2019-10-02 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | キャリア又は基板を搬送するための装置及び方法 |
| JP6591657B2 (ja) * | 2017-02-24 | 2019-10-16 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 真空システムで使用するためのキャリア、真空処理のためのシステム、及び基板の真空処理のための方法 |
-
2019
- 2019-01-11 KR KR1020190004235A patent/KR102257008B1/ko active Active
- 2019-10-16 JP JP2019189549A patent/JP7271389B2/ja active Active
- 2019-11-25 CN CN201911161956.9A patent/CN111434798B/zh active Active
-
2021
- 2021-05-20 KR KR1020210064739A patent/KR102594630B1/ko active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101783457B1 (ko) * | 2012-06-22 | 2017-10-10 | 주식회사 원익아이피에스 | 마스크 홀더장치 및 이를 포함하는 증착장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102594630B1 (ko) | 2023-10-25 |
| JP7271389B2 (ja) | 2023-05-11 |
| CN111434798B (zh) | 2023-08-25 |
| JP2020111822A (ja) | 2020-07-27 |
| CN111434798A (zh) | 2020-07-21 |
| KR20200087636A (ko) | 2020-07-21 |
| KR20210062607A (ko) | 2021-05-31 |
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