JP7253668B2 - プラズマ処理装置およびプラズマ処理方法 - Google Patents

プラズマ処理装置およびプラズマ処理方法 Download PDF

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JP7253668B2
JP7253668B2 JP2022508859A JP2022508859A JP7253668B2 JP 7253668 B2 JP7253668 B2 JP 7253668B2 JP 2022508859 A JP2022508859 A JP 2022508859A JP 2022508859 A JP2022508859 A JP 2022508859A JP 7253668 B2 JP7253668 B2 JP 7253668B2
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Prior art keywords
data
processing
wafer
wafers
light
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JP2022508859A
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JPWO2022195662A5 (https=
JPWO2022195662A1 (https=
Inventor
宗一郎 江藤
翔 岡本
茂 中元
建人 臼井
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Hitachi High Tech Corp
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Hitachi High Tech Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0012—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry
    • H05H1/0025—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry by using photoelectric means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Treatment Of Fiber Materials (AREA)
JP2022508859A 2021-03-15 2021-03-15 プラズマ処理装置およびプラズマ処理方法 Active JP7253668B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/010341 WO2022195662A1 (ja) 2021-03-15 2021-03-15 プラズマ処理装置およびプラズマ処理方法

Publications (3)

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JPWO2022195662A1 JPWO2022195662A1 (https=) 2022-09-22
JPWO2022195662A5 JPWO2022195662A5 (https=) 2023-02-13
JP7253668B2 true JP7253668B2 (ja) 2023-04-06

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JP2022508859A Active JP7253668B2 (ja) 2021-03-15 2021-03-15 プラズマ処理装置およびプラズマ処理方法

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US (1) US12573601B2 (https=)
JP (1) JP7253668B2 (https=)
KR (1) KR102671263B1 (https=)
CN (1) CN115349164B (https=)
TW (1) TWI877462B (https=)
WO (1) WO2022195662A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7423854B1 (ja) * 2022-03-04 2024-01-29 株式会社日立ハイテク プラズマ処理方法およびプラズマ処理装置
CN115896731B (zh) * 2022-12-06 2024-01-12 等离子体装备科技(广州)有限公司 电子设备金属外壳的制备工艺及其加工设备
WO2026004036A1 (ja) * 2024-06-27 2026-01-02 株式会社日立ハイテク プラズマ処理方法およびプラズマ処理装置
CN118777217B (zh) * 2024-07-11 2024-12-20 南通科技职业学院 一种蔬菜中有机磷农药残留量的快速检测方法
WO2026047926A1 (ja) * 2024-08-29 2026-03-05 株式会社日立ハイテク プラズマ処理・制御装置およびプラズマ処理・制御方法
CN120656168B (zh) * 2025-08-19 2025-10-31 常熟市新明宇新材料科技有限公司 Pe膜表面静电微尘识别系统及方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219263A (ja) 2009-03-17 2010-09-30 Hitachi High-Technologies Corp エッチング装置、分析装置、エッチング処理方法、およびエッチング処理プログラム
JP2012238734A (ja) 2011-05-12 2012-12-06 Fujitsu Semiconductor Ltd 半導体装置の製造方法及半導体製造装置
JP2014022621A (ja) 2012-07-20 2014-02-03 Hitachi High-Technologies Corp 分析方法、分析装置、及びエッチング処理システム
JP2014179474A (ja) 2013-03-15 2014-09-25 Hitachi High-Technologies Corp 半導体エッチング装置及び分析装置
JP2018157120A (ja) 2017-03-21 2018-10-04 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153115A (en) * 1997-10-23 2000-11-28 Massachusetts Institute Of Technology Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra
JPH11260799A (ja) 1998-03-13 1999-09-24 Hitachi Ltd 薄膜の微細加工方法
US6160621A (en) 1999-09-30 2000-12-12 Lam Research Corporation Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
JP4347517B2 (ja) * 2000-12-06 2009-10-21 浜松ホトニクス株式会社 厚み計測装置、及びそれを用いたウエットエッチング装置、ウエットエッチング方法
KR100733120B1 (ko) * 2000-06-20 2007-06-28 가부시끼가이샤 히다치 세이사꾸쇼 반도체 웨이퍼처리의 검출방법 및 검출장치
US6903826B2 (en) * 2001-09-06 2005-06-07 Hitachi, Ltd. Method and apparatus for determining endpoint of semiconductor element fabricating process
KR100945889B1 (ko) * 2009-05-08 2010-03-05 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 처리의 판정방법
JP6186152B2 (ja) 2013-03-29 2017-08-23 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6504915B2 (ja) * 2015-05-25 2019-04-24 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6650258B2 (ja) * 2015-12-17 2020-02-19 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法
CN111587478B (zh) * 2018-06-28 2025-02-21 应用材料公司 用于光谱监测的机器学习系统的训练光谱产生

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219263A (ja) 2009-03-17 2010-09-30 Hitachi High-Technologies Corp エッチング装置、分析装置、エッチング処理方法、およびエッチング処理プログラム
JP2012238734A (ja) 2011-05-12 2012-12-06 Fujitsu Semiconductor Ltd 半導体装置の製造方法及半導体製造装置
JP2014022621A (ja) 2012-07-20 2014-02-03 Hitachi High-Technologies Corp 分析方法、分析装置、及びエッチング処理システム
JP2014179474A (ja) 2013-03-15 2014-09-25 Hitachi High-Technologies Corp 半導体エッチング装置及び分析装置
JP2018157120A (ja) 2017-03-21 2018-10-04 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Also Published As

Publication number Publication date
CN115349164B (zh) 2026-03-20
TW202238719A (zh) 2022-10-01
US12573601B2 (en) 2026-03-10
US20240213004A1 (en) 2024-06-27
JPWO2022195662A1 (https=) 2022-09-22
TWI877462B (zh) 2025-03-21
KR20220130084A (ko) 2022-09-26
CN115349164A (zh) 2022-11-15
KR102671263B1 (ko) 2024-06-03
WO2022195662A1 (ja) 2022-09-22

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