JPWO2022195662A1 - - Google Patents
Info
- Publication number
- JPWO2022195662A1 JPWO2022195662A1 JP2022508859A JP2022508859A JPWO2022195662A1 JP WO2022195662 A1 JPWO2022195662 A1 JP WO2022195662A1 JP 2022508859 A JP2022508859 A JP 2022508859A JP 2022508859 A JP2022508859 A JP 2022508859A JP WO2022195662 A1 JPWO2022195662 A1 JP WO2022195662A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
- H05H1/0012—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry
- H05H1/0025—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry by using photoelectric means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Drying Of Semiconductors (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Treatment Of Fiber Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/010341 WO2022195662A1 (ja) | 2021-03-15 | 2021-03-15 | プラズマ処理装置およびプラズマ処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022195662A1 true JPWO2022195662A1 (https=) | 2022-09-22 |
| JPWO2022195662A5 JPWO2022195662A5 (https=) | 2023-02-13 |
| JP7253668B2 JP7253668B2 (ja) | 2023-04-06 |
Family
ID=83320090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022508859A Active JP7253668B2 (ja) | 2021-03-15 | 2021-03-15 | プラズマ処理装置およびプラズマ処理方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12573601B2 (https=) |
| JP (1) | JP7253668B2 (https=) |
| KR (1) | KR102671263B1 (https=) |
| CN (1) | CN115349164B (https=) |
| TW (1) | TWI877462B (https=) |
| WO (1) | WO2022195662A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7423854B1 (ja) * | 2022-03-04 | 2024-01-29 | 株式会社日立ハイテク | プラズマ処理方法およびプラズマ処理装置 |
| CN115896731B (zh) * | 2022-12-06 | 2024-01-12 | 等离子体装备科技(广州)有限公司 | 电子设备金属外壳的制备工艺及其加工设备 |
| WO2026004036A1 (ja) * | 2024-06-27 | 2026-01-02 | 株式会社日立ハイテク | プラズマ処理方法およびプラズマ処理装置 |
| CN118777217B (zh) * | 2024-07-11 | 2024-12-20 | 南通科技职业学院 | 一种蔬菜中有机磷农药残留量的快速检测方法 |
| WO2026047926A1 (ja) * | 2024-08-29 | 2026-03-05 | 株式会社日立ハイテク | プラズマ処理・制御装置およびプラズマ処理・制御方法 |
| CN120656168B (zh) * | 2025-08-19 | 2025-10-31 | 常熟市新明宇新材料科技有限公司 | Pe膜表面静电微尘识别系统及方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010219263A (ja) * | 2009-03-17 | 2010-09-30 | Hitachi High-Technologies Corp | エッチング装置、分析装置、エッチング処理方法、およびエッチング処理プログラム |
| JP2012238734A (ja) * | 2011-05-12 | 2012-12-06 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法及半導体製造装置 |
| JP2014022621A (ja) * | 2012-07-20 | 2014-02-03 | Hitachi High-Technologies Corp | 分析方法、分析装置、及びエッチング処理システム |
| JP2014179474A (ja) * | 2013-03-15 | 2014-09-25 | Hitachi High-Technologies Corp | 半導体エッチング装置及び分析装置 |
| JP2018157120A (ja) * | 2017-03-21 | 2018-10-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6153115A (en) * | 1997-10-23 | 2000-11-28 | Massachusetts Institute Of Technology | Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra |
| JPH11260799A (ja) | 1998-03-13 | 1999-09-24 | Hitachi Ltd | 薄膜の微細加工方法 |
| US6160621A (en) | 1999-09-30 | 2000-12-12 | Lam Research Corporation | Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source |
| JP4347517B2 (ja) * | 2000-12-06 | 2009-10-21 | 浜松ホトニクス株式会社 | 厚み計測装置、及びそれを用いたウエットエッチング装置、ウエットエッチング方法 |
| KR100733120B1 (ko) * | 2000-06-20 | 2007-06-28 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체 웨이퍼처리의 검출방법 및 검출장치 |
| US6903826B2 (en) * | 2001-09-06 | 2005-06-07 | Hitachi, Ltd. | Method and apparatus for determining endpoint of semiconductor element fabricating process |
| KR100945889B1 (ko) * | 2009-05-08 | 2010-03-05 | 가부시키가이샤 히다치 하이테크놀로지즈 | 플라즈마 처리의 판정방법 |
| JP6186152B2 (ja) | 2013-03-29 | 2017-08-23 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP6504915B2 (ja) * | 2015-05-25 | 2019-04-24 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP6650258B2 (ja) * | 2015-12-17 | 2020-02-19 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理装置の運転方法 |
| CN111587478B (zh) * | 2018-06-28 | 2025-02-21 | 应用材料公司 | 用于光谱监测的机器学习系统的训练光谱产生 |
-
2021
- 2021-03-15 CN CN202180005331.2A patent/CN115349164B/zh active Active
- 2021-03-15 KR KR1020227007944A patent/KR102671263B1/ko active Active
- 2021-03-15 JP JP2022508859A patent/JP7253668B2/ja active Active
- 2021-03-15 US US17/911,779 patent/US12573601B2/en active Active
- 2021-03-15 WO PCT/JP2021/010341 patent/WO2022195662A1/ja not_active Ceased
-
2022
- 2022-03-14 TW TW111109185A patent/TWI877462B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010219263A (ja) * | 2009-03-17 | 2010-09-30 | Hitachi High-Technologies Corp | エッチング装置、分析装置、エッチング処理方法、およびエッチング処理プログラム |
| JP2012238734A (ja) * | 2011-05-12 | 2012-12-06 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法及半導体製造装置 |
| JP2014022621A (ja) * | 2012-07-20 | 2014-02-03 | Hitachi High-Technologies Corp | 分析方法、分析装置、及びエッチング処理システム |
| JP2014179474A (ja) * | 2013-03-15 | 2014-09-25 | Hitachi High-Technologies Corp | 半導体エッチング装置及び分析装置 |
| JP2018157120A (ja) * | 2017-03-21 | 2018-10-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115349164B (zh) | 2026-03-20 |
| TW202238719A (zh) | 2022-10-01 |
| JP7253668B2 (ja) | 2023-04-06 |
| US12573601B2 (en) | 2026-03-10 |
| US20240213004A1 (en) | 2024-06-27 |
| TWI877462B (zh) | 2025-03-21 |
| KR20220130084A (ko) | 2022-09-26 |
| CN115349164A (zh) | 2022-11-15 |
| KR102671263B1 (ko) | 2024-06-03 |
| WO2022195662A1 (ja) | 2022-09-22 |
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