JPWO2022195662A1 - - Google Patents

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Publication number
JPWO2022195662A1
JPWO2022195662A1 JP2022508859A JP2022508859A JPWO2022195662A1 JP WO2022195662 A1 JPWO2022195662 A1 JP WO2022195662A1 JP 2022508859 A JP2022508859 A JP 2022508859A JP 2022508859 A JP2022508859 A JP 2022508859A JP WO2022195662 A1 JPWO2022195662 A1 JP WO2022195662A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022508859A
Other versions
JP7253668B2 (ja
JPWO2022195662A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022195662A1 publication Critical patent/JPWO2022195662A1/ja
Publication of JPWO2022195662A5 publication Critical patent/JPWO2022195662A5/ja
Application granted granted Critical
Publication of JP7253668B2 publication Critical patent/JP7253668B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0012—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry
    • H05H1/0025—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry by using photoelectric means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Treatment Of Fiber Materials (AREA)
JP2022508859A 2021-03-15 2021-03-15 プラズマ処理装置およびプラズマ処理方法 Active JP7253668B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/010341 WO2022195662A1 (ja) 2021-03-15 2021-03-15 プラズマ処理装置およびプラズマ処理方法

Publications (3)

Publication Number Publication Date
JPWO2022195662A1 true JPWO2022195662A1 (ja) 2022-09-22
JPWO2022195662A5 JPWO2022195662A5 (ja) 2023-02-13
JP7253668B2 JP7253668B2 (ja) 2023-04-06

Family

ID=83320090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022508859A Active JP7253668B2 (ja) 2021-03-15 2021-03-15 プラズマ処理装置およびプラズマ処理方法

Country Status (6)

Country Link
US (1) US20240213004A1 (ja)
JP (1) JP7253668B2 (ja)
KR (1) KR102671263B1 (ja)
CN (1) CN115349164A (ja)
TW (1) TW202238719A (ja)
WO (1) WO2022195662A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115896731B (zh) * 2022-12-06 2024-01-12 等离子体装备科技(广州)有限公司 电子设备金属外壳的制备工艺及其加工设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219263A (ja) * 2009-03-17 2010-09-30 Hitachi High-Technologies Corp エッチング装置、分析装置、エッチング処理方法、およびエッチング処理プログラム
JP2012238734A (ja) * 2011-05-12 2012-12-06 Fujitsu Semiconductor Ltd 半導体装置の製造方法及半導体製造装置
JP2014022621A (ja) * 2012-07-20 2014-02-03 Hitachi High-Technologies Corp 分析方法、分析装置、及びエッチング処理システム
JP2014179474A (ja) * 2013-03-15 2014-09-25 Hitachi High-Technologies Corp 半導体エッチング装置及び分析装置
JP2018157120A (ja) * 2017-03-21 2018-10-04 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11260799A (ja) 1998-03-13 1999-09-24 Hitachi Ltd 薄膜の微細加工方法
US6160621A (en) 1999-09-30 2000-12-12 Lam Research Corporation Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
JP6186152B2 (ja) 2013-03-29 2017-08-23 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219263A (ja) * 2009-03-17 2010-09-30 Hitachi High-Technologies Corp エッチング装置、分析装置、エッチング処理方法、およびエッチング処理プログラム
JP2012238734A (ja) * 2011-05-12 2012-12-06 Fujitsu Semiconductor Ltd 半導体装置の製造方法及半導体製造装置
JP2014022621A (ja) * 2012-07-20 2014-02-03 Hitachi High-Technologies Corp 分析方法、分析装置、及びエッチング処理システム
JP2014179474A (ja) * 2013-03-15 2014-09-25 Hitachi High-Technologies Corp 半導体エッチング装置及び分析装置
JP2018157120A (ja) * 2017-03-21 2018-10-04 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Also Published As

Publication number Publication date
TW202238719A (zh) 2022-10-01
WO2022195662A1 (ja) 2022-09-22
KR102671263B1 (ko) 2024-06-03
US20240213004A1 (en) 2024-06-27
CN115349164A (zh) 2022-11-15
JP7253668B2 (ja) 2023-04-06
KR20220130084A (ko) 2022-09-26

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