JP7249098B2 - 有機発光表示装置およびその製造方法 - Google Patents
有機発光表示装置およびその製造方法 Download PDFInfo
- Publication number
- JP7249098B2 JP7249098B2 JP2017234262A JP2017234262A JP7249098B2 JP 7249098 B2 JP7249098 B2 JP 7249098B2 JP 2017234262 A JP2017234262 A JP 2017234262A JP 2017234262 A JP2017234262 A JP 2017234262A JP 7249098 B2 JP7249098 B2 JP 7249098B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- organic light
- opening
- layer
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 230000002093 peripheral effect Effects 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 157
- 239000010408 film Substances 0.000 description 47
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 22
- 239000003990 capacitor Substances 0.000 description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 239000011575 calcium Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 7
- 239000010931 gold Substances 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 5
- 229910001195 gallium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910020923 Sn-O Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- 240000001973 Ficus microcarpa Species 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229920006337 unsaturated polyester resin Polymers 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018516 Al—O Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910007611 Zn—In—O Inorganic materials 0.000 description 1
- 229910007604 Zn—Sn—O Inorganic materials 0.000 description 1
- GWQGFBOINSFOEJ-UHFFFAOYSA-N [Ge]=O.[In] Chemical compound [Ge]=O.[In] GWQGFBOINSFOEJ-UHFFFAOYSA-N 0.000 description 1
- KWXIRYKCFANFRC-UHFFFAOYSA-N [O--].[O--].[O--].[Al+3].[In+3] Chemical compound [O--].[O--].[O--].[Al+3].[In+3] KWXIRYKCFANFRC-UHFFFAOYSA-N 0.000 description 1
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
- YHOPVYQBMLTWBB-UHFFFAOYSA-N [O-2].[Al+3].[Sn+4].[In+3].[O-2].[O-2].[O-2].[O-2] Chemical compound [O-2].[Al+3].[Sn+4].[In+3].[O-2].[O-2].[O-2].[O-2] YHOPVYQBMLTWBB-UHFFFAOYSA-N 0.000 description 1
- RQIPKMUHKBASFK-UHFFFAOYSA-N [O-2].[Zn+2].[Ge+2].[In+3] Chemical compound [O-2].[Zn+2].[Ge+2].[In+3] RQIPKMUHKBASFK-UHFFFAOYSA-N 0.000 description 1
- NYWDRMXTLALMQF-UHFFFAOYSA-N [Sn]=O.[Ta].[In] Chemical compound [Sn]=O.[Ta].[In] NYWDRMXTLALMQF-UHFFFAOYSA-N 0.000 description 1
- AWTYVENYAIZTAE-UHFFFAOYSA-N [Zr].[Sn]=O.[In] Chemical compound [Zr].[Sn]=O.[In] AWTYVENYAIZTAE-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- WCOSNLGKHNWDQR-UHFFFAOYSA-N germanium;indium;oxotin Chemical compound [Ge].[In].[Sn]=O WCOSNLGKHNWDQR-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- WMCMKBBLRYJDNO-UHFFFAOYSA-N indium(3+) oxygen(2-) tantalum(5+) Chemical compound [O--].[O--].[O--].[O--].[In+3].[Ta+5] WMCMKBBLRYJDNO-UHFFFAOYSA-N 0.000 description 1
- HJZPJSFRSAHQNT-UHFFFAOYSA-N indium(3+) oxygen(2-) zirconium(4+) Chemical compound [O-2].[Zr+4].[In+3] HJZPJSFRSAHQNT-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- YSRUGFMGLKANGO-UHFFFAOYSA-N zinc hafnium(4+) indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[In+3].[Hf+4] YSRUGFMGLKANGO-UHFFFAOYSA-N 0.000 description 1
- FHNUEJOZZSDCTO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tantalum(5+) Chemical compound [O-2].[Zn+2].[In+3].[Ta+5].[O-2].[O-2].[O-2].[O-2] FHNUEJOZZSDCTO-UHFFFAOYSA-N 0.000 description 1
- OPCPDIFRZGJVCE-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Zn+2].[In+3].[Ti+4] OPCPDIFRZGJVCE-UHFFFAOYSA-N 0.000 description 1
- VGYZOYLDGKIWST-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) zirconium(4+) Chemical compound [O-2].[Zn+2].[Zr+4].[In+3] VGYZOYLDGKIWST-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
Description
(i)TFT及び配線を覆う樹脂絶縁膜(「平坦化膜180」)を形成する。
(ii)樹脂絶縁膜に、第1電極(710)のパターンを形成した後、表示パネルの全面に青色や白色などの有機発光層(720)を形成する。
(iii)有機発光層を貫くコンタクトホールをレーザ照射により設けて共通電圧供給配線(「補助電極310」)の上面を露出させる。
(iv)この上に、全面に第2電極(730共通電極)を形成する。
A.共通電圧供給配線(「補助電極310」)を樹脂絶縁膜(「平坦化膜180」)より前に形成し、共通電圧供給配線の上面の一部を、樹脂絶縁膜(平坦化膜)を貫くコンタクトホールにより露出させる。
B.この露出部分に、第1電極と同時に形成される接続部(「補助部材410」)を設ける。
C.この結果、レーザ照射領域には、樹脂絶縁層が存在せず、接続部(「補助部材410」)は、共通電圧供給配線(「補助電極310」)に直接重ね合わされて、支持されている。そのため、接続部(「補助部材410」)が局部的に撓(たわ)んで亀裂を生ずることがなく、樹脂絶縁膜からの分解ガスが漏れ出して、有機発光層を酸化させることがない。
180…平坦化膜
181…接触孔
182…第1開口部
310…補助電極
350…画素定義膜
351…第3開口部
352…第4開口部
410…補助部材
710…第1電極
720…有機発光層
730…第2電極
Claims (18)
- 基板と、
前記基板上に形成され、画像を表示する画素領域および前記画素領域に隣接した周辺領域を含む画素と、
前記基板上の前記画素領域および前記周辺領域に形成される絶縁層と、
前記絶縁層上の前記画素領域に形成される第1電極と、
前記第1電極上に形成され、前記周辺領域に延長された有機発光層と、
前記有機発光層上に形成され、前記画素領域および前記周辺領域に形成される第2電極と、
前記基板上の前記周辺領域に配置され、前記絶縁層に形成された第1開口部により一部が露出される補助電極と、
前記補助電極上に配置され、前記第1開口部により露出された前記補助電極の上面と接触する補助部材と、を含み、
前記有機発光層は、前記第1開口部の近傍にて、前記第1開口部の底面の一部でのみ除去されることで第2開口部が形成されており、この第2開口部を通じて、前記第2電極と、前記補助部材とが接触しており、
前記第1開口部の内周面は、順テーパー状であり、
前記第2開口部は、ドット状であって、前記第1開口部の内周面から離隔して位置し、
前記補助部材は、前記第1開口部の内周面の一部と接触する、有機発光表示装置。 - 基板と、
前記基板上に形成され、画像を表示する画素領域および前記画素領域に隣接した周辺領域を含む画素と、
前記基板上の前記画素領域および前記周辺領域に形成される絶縁層と、
前記絶縁層上の前記画素領域に形成される第1電極と、
前記第1電極上に形成され、前記周辺領域に延長された有機発光層と、
前記有機発光層上に形成され、前記画素領域および前記周辺領域に形成される第2電極と、
前記基板上の前記周辺領域に配置され、前記絶縁層に形成された第1開口部により一部が露出される補助電極と、
前記補助電極上に配置され、前記第1開口部により露出された前記補助電極の上面と接触する補助部材と、を含み、
前記有機発光層は、前記第1開口部の近傍にて、前記第1開口部の底面の一部でのみ除去されることで第2開口部が形成されており、この第2開口部を通じて、前記第2電極と、前記補助部材とが接触しており、
前記第1開口部の内周面は、順テーパー状であり、
前記第2開口部は、ドット状であって、前記第1開口部の内周面から離隔して位置し、
前記補助部材は、前記第1電極と、同一の材料及び層構造により、積層構造中に同一の層に位置するように形成されている、有機発光表示装置。 - 前記補助部材は、前記第1開口部の近傍にのみ備えられる、請求項1または2に記載の有機発光表示装置。
- 前記補助部材は、前記第1開口部の底面に対応する箇所にのみ備えられている、請求項3に記載の有機発光表示装置。
- 前記補助部材は、前記第1開口部の底面の全体にて、前記補助電極に直接に接触するように重ね合わされている、請求項1~4のいずれかに記載の有機発光表示装置。
- 前記第2開口部は、円形状である、請求項4に記載の有機発光表示装置。
- 前記補助部材は、ITO(Indium Tin Oxide)、銀(Ag)およびITOが順次に積層されて形成される、請求項2に記載の有機発光表示装置。
- 前記補助電極は、共通電圧を伝達する共通電圧線である、請求項1または2に記載の有機発光表示装置。
- 前記補助電極は、モリブデン(Mo)層、アルミニウム(Al)層およびもう一つのモリブデン(Mo)層がこの順に積層されて形成されている、請求項8に記載の有機発光表示装置。
- 前記画素は、前記画素領域と前記周辺領域を含む少なくとも一つのサブ画素を含み、
前記サブ画素は、赤色サブ画素である、請求項1または2に記載の有機発光表示装置。 - 基板を準備する段階と、
前記基板上に半導体層、前記半導体層上に形成されるゲート電極、および前記半導体層に連結されたソース電極およびドレイン電極を含む薄膜トランジスタを形成する段階と、
前記基板上に共通電圧を供給する補助電極を形成する段階と、
前記薄膜トランジスタおよび前記補助電極上に形成され、前記ドレイン電極と前記補助電極の一部を露出させる第1開口部を含む絶縁層を形成する段階と、
前記絶縁層上に形成され、前記ドレイン電極と接触する第1電極を形成する段階と、
前記絶縁層に形成された前記第1開口部を通じて前記補助電極と接触する補助部材を形成する段階と、
前記第1電極および前記補助部材上に有機発光層を形成する段階と、
前記第1開口部の近傍にて、前記第1開口部の底面の一部でのみ除去されて、前記補助部材の一部が露出されるように前記有機発光層の一部を除去する段階と、
前記有機発光層上に第2電極を形成する段階と、を含む、有機発光表示装置の製造方法。 - 前記有機発光層の一部を除去する段階は、レーザを利用して行われる、請求項11に記載の有機発光表示装置の製造方法。
- 前記補助部材は、前記第1開口部の近傍にのみ備えられる、請求項11に記載の有機発光表示装置の製造方法。
- 前記有機発光層の一部を除去することで形成された第2開口部は、円形状である、請求項13に記載の有機発光表示装置の製造方法。
- 前記補助部材の一部が露出される第3開口部と前記第1電極の一部が露出される第4開口部が形成される画素定義膜を形成する段階をさらに含む、請求項11に記載の有機発光表示装置の製造方法。
- 前記ソース電極および前記ドレイン電極と前記補助電極は、同一の材料及び層構造により、積層構造中に同一の層に位置するように形成する、請求項11に記載の有機発光表示装置の製造方法。
- 前記第1電極と前記補助部材を、同一の材料及び層構造により、積層構造中に同一の層に位置するように形成する、請求項11に記載の有機発光表示装置の製造方法。
- 前記補助部材は、前記第1開口部の底面の全体にて、前記補助電極に直接に接触するように重ね合わされている、請求項11に記載の有機発光表示装置の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2016-0165997 | 2016-12-07 | ||
KR1020160165997A KR20180066320A (ko) | 2016-12-07 | 2016-12-07 | 유기 발광 표시 장치 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018097361A JP2018097361A (ja) | 2018-06-21 |
JP7249098B2 true JP7249098B2 (ja) | 2023-03-30 |
Family
ID=60627458
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017234262A Active JP7249098B2 (ja) | 2016-12-07 | 2017-12-06 | 有機発光表示装置およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US10147769B2 (ja) |
EP (1) | EP3333924A1 (ja) |
JP (1) | JP7249098B2 (ja) |
KR (1) | KR20180066320A (ja) |
CN (1) | CN108172597B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7472722B2 (ja) | 2020-08-28 | 2024-04-23 | 沖電気工業株式会社 | 承認端末、方法、プログラム、振込管理装置、ベリファイ端末および為替システム |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017072678A1 (en) | 2015-10-26 | 2017-05-04 | Oti Lumionics Inc. | Method for patterning a coating on a surface and device including a patterned coating |
KR20180066320A (ko) | 2016-12-07 | 2018-06-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN110785867B (zh) | 2017-04-26 | 2023-05-02 | Oti照明公司 | 用于图案化表面上覆层的方法和包括图案化覆层的装置 |
JP7264488B2 (ja) | 2017-05-17 | 2023-04-25 | オーティーアイ ルミオニクス インコーポレーテッド | パターン化コーティングにわたって伝導性コーティングを選択的に堆積させるための方法および伝導性コーティングを含むデバイス |
CN107394060B (zh) * | 2017-09-07 | 2024-01-19 | 京东方科技集团股份有限公司 | 显示面板、显示装置及制备显示面板的方法 |
US11751415B2 (en) | 2018-02-02 | 2023-09-05 | Oti Lumionics Inc. | Materials for forming a nucleation-inhibiting coating and devices incorporating same |
JP7320851B2 (ja) | 2018-05-07 | 2023-08-04 | オーティーアイ ルミオニクス インコーポレーテッド | 補助電極を提供するための方法および補助電極を含むデバイス |
CN108831302B (zh) * | 2018-06-19 | 2020-08-21 | 武汉天马微电子有限公司 | 显示面板及显示装置 |
JP7108478B2 (ja) * | 2018-06-21 | 2022-07-28 | 株式会社ジャパンディスプレイ | 表示装置 |
KR102585158B1 (ko) * | 2018-07-04 | 2023-10-05 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102554738B1 (ko) * | 2018-07-17 | 2023-07-11 | 엘지디스플레이 주식회사 | 유기발광표시장치 및 이의 제조방법 |
KR20200080896A (ko) * | 2018-12-27 | 2020-07-07 | 엘지디스플레이 주식회사 | 유기발광 표시장치 |
KR102621016B1 (ko) * | 2018-12-28 | 2024-01-05 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
EP3905226B1 (en) * | 2018-12-28 | 2023-10-18 | Honor Device Co., Ltd. | Display |
JP7390739B2 (ja) | 2019-03-07 | 2023-12-04 | オーティーアイ ルミオニクス インコーポレーテッド | 核生成抑制コーティングを形成するための材料およびそれを組み込んだデバイス |
KR20200113056A (ko) | 2019-03-20 | 2020-10-06 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 그 제조방법 |
US11963384B2 (en) * | 2019-03-26 | 2024-04-16 | Sharp Kabushiki Kaisha | Display device and method for manufacturing same |
US20220190291A1 (en) * | 2019-03-26 | 2022-06-16 | Sharp Kabushiki Kaisha | Display device and method for manufacturing same |
CN110224005B (zh) * | 2019-05-10 | 2021-04-02 | 深圳市华星光电半导体显示技术有限公司 | 显示器及其制备方法 |
US10991682B2 (en) * | 2019-05-29 | 2021-04-27 | Innolux Corporation | Electronic device |
US11832473B2 (en) | 2019-06-26 | 2023-11-28 | Oti Lumionics Inc. | Optoelectronic device including light transmissive regions, with light diffraction characteristics |
KR20220046551A (ko) | 2019-06-26 | 2022-04-14 | 오티아이 루미오닉스 인크. | 광 회절 특성을 갖는 광 투과 영역을 포함하는 광전자 디바이스 |
CN110350008A (zh) * | 2019-07-02 | 2019-10-18 | 深圳市华星光电半导体显示技术有限公司 | 发光面板的制备方法、发光面板及显示装置 |
KR20220045202A (ko) | 2019-08-09 | 2022-04-12 | 오티아이 루미오닉스 인크. | 보조 전극 및 파티션을 포함하는 광전자 디바이스 |
CN110579913B (zh) * | 2019-08-09 | 2020-12-04 | 武汉华星光电半导体显示技术有限公司 | 显示面板及显示装置 |
CN110854290B (zh) * | 2019-10-29 | 2021-06-22 | 苏州华星光电技术有限公司 | 一种显示面板及其制备方法 |
KR20210085248A (ko) * | 2019-12-30 | 2021-07-08 | 엘지디스플레이 주식회사 | 표시장치 |
CN114270525A (zh) * | 2020-03-24 | 2022-04-01 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法和显示面板 |
CN111525042A (zh) * | 2020-04-26 | 2020-08-11 | 深圳市华星光电半导体显示技术有限公司 | 有机发光二极管显示面板及其制造方法 |
CN112038357A (zh) * | 2020-08-31 | 2020-12-04 | 上海天马有机发光显示技术有限公司 | 一种显示面板、显示装置及制备方法 |
CN114582928A (zh) * | 2020-11-30 | 2022-06-03 | 乐金显示有限公司 | 电致发光显示装置 |
US11985841B2 (en) | 2020-12-07 | 2024-05-14 | Oti Lumionics Inc. | Patterning a conductive deposited layer using a nucleation inhibiting coating and an underlying metallic coating |
WO2022178827A1 (zh) * | 2021-02-26 | 2022-09-01 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
KR20220168616A (ko) * | 2021-06-16 | 2022-12-26 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
KR20230058215A (ko) * | 2021-10-22 | 2023-05-03 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
CN114141841A (zh) * | 2021-11-26 | 2022-03-04 | 合肥京东方卓印科技有限公司 | 显示基板及其制备方法、显示装置 |
KR20230089624A (ko) * | 2021-12-13 | 2023-06-21 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조방법 |
KR20230100956A (ko) * | 2021-12-29 | 2023-07-06 | 엘지디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
WO2024113296A1 (zh) * | 2022-12-01 | 2024-06-06 | 京东方科技集团股份有限公司 | 发光基板、显示面板和显示装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070048886A1 (en) | 2005-08-29 | 2007-03-01 | Eastman Kodak Company | Electrical connection in OLED devices |
JP2007279680A (ja) | 2006-04-10 | 2007-10-25 | Lg Electron Inc | 電界発光素子及びその製造方法 |
US20140239262A1 (en) | 2013-02-25 | 2014-08-28 | Samsung Display Co., Ltd. | Organic light-emitting display device and method of manufacturing the same |
JP2016035888A (ja) | 2014-08-01 | 2016-03-17 | エバーディスプレイ オプトロニクス(シャンハイ) リミテッド | 逆構造トップエミッション型デバイス及びその製造方法 |
US20160293888A1 (en) | 2015-04-02 | 2016-10-06 | Lg Display Co., Ltd. | Auxiliary Lines Reducing Resistance In A Cathode Of An Organic Light Emitting Display Device |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6995035B2 (en) * | 2003-06-16 | 2006-02-07 | Eastman Kodak Company | Method of making a top-emitting OLED device having improved power distribution |
GB2403101B (en) | 2003-06-18 | 2005-12-21 | Matsushita Electric Ind Co Ltd | Extended dynamic resource allocation in packet data transfer |
KR100546663B1 (ko) | 2003-08-05 | 2006-01-26 | 엘지전자 주식회사 | 탑-이미션 방식의 유기 el 소자 및 그 제조방법 |
JP4449857B2 (ja) | 2005-08-17 | 2010-04-14 | ソニー株式会社 | 表示装置の製造方法 |
US20070048386A1 (en) | 2005-08-30 | 2007-03-01 | Mallozzi Ottavio Sr | Medicament for treating inflammatory and non-inflammatory arthritis |
KR101574211B1 (ko) | 2008-09-05 | 2015-12-07 | 삼성디스플레이 주식회사 | 유기 전계 발광 소자 |
KR101699911B1 (ko) * | 2010-04-05 | 2017-01-26 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR101372641B1 (ko) * | 2012-04-18 | 2014-03-17 | 주식회사 야스 | 레이저 버닝을 이용한 유기발광소자의 제조방법 |
US9362345B2 (en) | 2013-05-31 | 2016-06-07 | Samsung Display Co., Ltd. | Organic light emitting display apparatus and method of manufacturing the same |
US9450039B2 (en) | 2013-05-31 | 2016-09-20 | Samsung Display Co., Ltd. | Organic light emitting display apparatus and method of manufacturing the same |
JP2015074810A (ja) | 2013-10-10 | 2015-04-20 | 日東電工株式会社 | スパッタ装置およびスパッタ装置のフィルムロールの交換方法 |
KR102443645B1 (ko) * | 2016-01-13 | 2022-09-15 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR20180066320A (ko) | 2016-12-07 | 2018-06-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
-
2016
- 2016-12-07 KR KR1020160165997A patent/KR20180066320A/ko not_active Application Discontinuation
-
2017
- 2017-09-21 US US15/711,103 patent/US10147769B2/en active Active
- 2017-12-06 EP EP17205586.5A patent/EP3333924A1/en active Pending
- 2017-12-06 JP JP2017234262A patent/JP7249098B2/ja active Active
- 2017-12-07 CN CN201711284818.0A patent/CN108172597B/zh active Active
-
2018
- 2018-11-12 US US16/186,817 patent/US10446613B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070048886A1 (en) | 2005-08-29 | 2007-03-01 | Eastman Kodak Company | Electrical connection in OLED devices |
JP2007279680A (ja) | 2006-04-10 | 2007-10-25 | Lg Electron Inc | 電界発光素子及びその製造方法 |
US20140239262A1 (en) | 2013-02-25 | 2014-08-28 | Samsung Display Co., Ltd. | Organic light-emitting display device and method of manufacturing the same |
JP2016035888A (ja) | 2014-08-01 | 2016-03-17 | エバーディスプレイ オプトロニクス(シャンハイ) リミテッド | 逆構造トップエミッション型デバイス及びその製造方法 |
US20160293888A1 (en) | 2015-04-02 | 2016-10-06 | Lg Display Co., Ltd. | Auxiliary Lines Reducing Resistance In A Cathode Of An Organic Light Emitting Display Device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7472722B2 (ja) | 2020-08-28 | 2024-04-23 | 沖電気工業株式会社 | 承認端末、方法、プログラム、振込管理装置、ベリファイ端末および為替システム |
Also Published As
Publication number | Publication date |
---|---|
EP3333924A1 (en) | 2018-06-13 |
US10446613B2 (en) | 2019-10-15 |
JP2018097361A (ja) | 2018-06-21 |
KR20180066320A (ko) | 2018-06-19 |
CN108172597B (zh) | 2023-09-12 |
CN108172597A (zh) | 2018-06-15 |
US20190081111A1 (en) | 2019-03-14 |
US10147769B2 (en) | 2018-12-04 |
US20180158878A1 (en) | 2018-06-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7249098B2 (ja) | 有機発光表示装置およびその製造方法 | |
US9893134B2 (en) | Organic light-emitting diode display | |
KR100932989B1 (ko) | 유기 발광 표시 장치 및 그 제조 방법 | |
KR100989135B1 (ko) | 유기 발광 표시 장치 | |
KR102094391B1 (ko) | 유기 발광 표시 장치 | |
EP2278622A2 (en) | Organic light emitting diode display | |
EP2149925B1 (en) | Organic light emitting diode display | |
WO2019130480A1 (ja) | 表示装置及びその製造方法 | |
KR20110135734A (ko) | 유기 발광 표시 장치 | |
US10971566B2 (en) | Display device including frame wiring in bending section | |
KR100959106B1 (ko) | 유기 발광 표시 장치 | |
KR20100016813A (ko) | 유기 발광 표시 장치 | |
KR101975957B1 (ko) | 유기 발광 표시 장치 | |
US20150042634A1 (en) | Organic light emitting diode display | |
JP2010141292A (ja) | 有機発光表示装置 | |
KR101587822B1 (ko) | 유기전계발광 표시장치 및 그 제조 방법 | |
WO2019186712A1 (ja) | 表示装置 | |
KR100778443B1 (ko) | 유기 발광 표시 장치 | |
KR100749420B1 (ko) | 유기 발광 표시 장치 | |
US12029083B2 (en) | Display device | |
KR101606871B1 (ko) | 유기전계발광 표시장치 및 그 제조 방법 | |
KR100786847B1 (ko) | 유기 전계 발광 표시 장치 | |
WO2019064439A1 (ja) | 表示装置 | |
KR20080056897A (ko) | 유기 전계 발광 표시장치 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20201130 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210916 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211005 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220105 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220426 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220725 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20220830 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221223 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20221223 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20230110 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20230117 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230221 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230317 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7249098 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |