JP7243844B2 - 半導体装置およびシステム - Google Patents
半導体装置およびシステム Download PDFInfo
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- JP7243844B2 JP7243844B2 JP2021548472A JP2021548472A JP7243844B2 JP 7243844 B2 JP7243844 B2 JP 7243844B2 JP 2021548472 A JP2021548472 A JP 2021548472A JP 2021548472 A JP2021548472 A JP 2021548472A JP 7243844 B2 JP7243844 B2 JP 7243844B2
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- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
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Description
[先行技術文献]
[特許文献]
[特許文献1] 特開2006-203446号公報
Claims (15)
- 半導体基板と、
前記半導体基板のおもて面に設けられた温度センス部と、
前記温度センス部と電気的に接続されたアノードパッドおよびカソードパッドと、
予め定められた基準電位に設定されたおもて面電極と、
前記カソードパッドと前記おもて面電極との間に、直列双方向で電気的に接続された双方向ダイオード部と、
前記温度センス部と電気的に接続された出力比較ダイオード部と、
を備え、
前記出力比較ダイオード部は、前記アノードパッドおよび前記カソードパッドの間に配置され、
前記温度センス部は温度センスダイオードを含み、前記出力比較ダイオード部は前記温度センスダイオードに対して逆並列に接続された出力比較ダイオードを含む、
半導体装置。 - 前記双方向ダイオード部は、前記おもて面において、前記アノードパッドおよび前記カソードパッドの間に配置される、
請求項1に記載の半導体装置。 - 前記双方向ダイオード部は、双方向に接続されたツェナーダイオードを含む、請求項1または2に記載の半導体装置。
- 前記おもて面電極は、
前記おもて面に設けられた主金属部と、
前記主金属部と前記双方向ダイオード部とを接続する接続部と
を有する、
請求項1から3のいずれか一項に記載の半導体装置。 - 前記おもて面電極に電気的に接続されたトランジスタ部と、
前記半導体基板のおもて面に設けられ、前記トランジスタ部のゲート電極に電気的に接続されたゲートランナーと
を備え、
前記接続部は、前記ゲートランナーの上方を横断する、
請求項4に記載の半導体装置。 - 電流センス部をさらに備え、
前記おもて面電極は、前記電流センス部に電気的に接続された電流センスパッドを含む、
請求項5に記載の半導体装置。 - 前記接続部の上方に設けられた保護膜を備える、
請求項4から6のいずれか一項に記載の半導体装置。 - 前記保護膜は、ポリイミドを含む、
請求項7に記載の半導体装置。 - 前記保護膜は、前記半導体基板のおもて面において、予め定められた方向に延伸する延伸部を有し、
前記双方向ダイオード部は、前記延伸部より前記半導体基板のおもて面の外側に配置される、
請求項7または8に記載の半導体装置。 - 前記双方向ダイオード部は、第1ダイオード部と、前記第1ダイオード部と逆直列に接続された第2ダイオード部と、を有し、
前記第1ダイオード部および前記第2ダイオード部のそれぞれは、並列に接続された複数のダイオードを含む、
請求項1から9のいずれか一項に記載の半導体装置。 - 請求項1から10のいずれか一項に記載の半導体装置と、
前記半導体装置の前記温度センス部および前記出力比較ダイオード部に電気的に接続され、前記温度センス部および前記出力比較ダイオード部のそれぞれに対し、通電方向を切り替えて順方向の電流を流すスイッチング部と、
前記温度センス部に順方向電流を入力した場合の出力電圧と、前記出力比較ダイオード部に順方向電流を入力した場合の出力電圧との電圧差分値を測定する検出部とを有する、劣化検出回路と、
を備えるシステム。 - 前記検出部は、前記電圧差分値と予め定められた閾値とを比較して、前記電圧差分値が前記閾値より大きい場合に、前記温度センスダイオードの交換を促す通知を発信する、
請求項11に記載のシステム。 - 半導体基板と、
前記半導体基板のおもて面に設けられた温度センス部と、
前記温度センス部と電気的に接続されたアノード配線およびカソード配線と、
予め定められた基準電位に設定されたおもて面電極と、
前記カソード配線と前記おもて面電極との間に、直列双方向で電気的に接続された双方向ダイオード部と、
前記アノード配線および前記カソード配線を介して、前記温度センス部と電気的に接続されたアノードパッドおよびカソードパッドと、
前記温度センス部と電気的に接続された出力比較ダイオード部と、
を備え、
前記双方向ダイオード部は、前記おもて面において、前記カソード配線および前記おもて面電極の間に配置され、
前記出力比較ダイオード部は、前記アノードパッドおよび前記カソードパッドの間に配置され、
前記温度センス部は温度センスダイオードを含み、前記出力比較ダイオード部は前記温度センスダイオードに対して逆並列に接続された出力比較ダイオードを含む、
半導体装置。 - 前記双方向ダイオード部は、前記双方向ダイオード部および前記温度センス部により前記カソード配線を挟んで配置される、
請求項13に記載の半導体装置。 - 半導体基板と、
前記半導体基板のおもて面に設けられた温度センス部と、
前記温度センス部と電気的に接続されたアノードパッドおよびカソードパッドと、
電流センス部と、
予め定められた基準電位に設定され、前記電流センス部に電気的に接続された電流センスパッドと、
前記カソードパッドと前記電流センスパッドとの間に、直列双方向で電気的に接続された双方向ダイオード部と、
前記温度センス部と電気的に接続された出力比較ダイオード部と、
を備え、
前記双方向ダイオード部は、前記おもて面において、前記電流センスパッドおよび前記カソードパッドの間に配置され、
前記出力比較ダイオード部は、前記アノードパッドおよび前記カソードパッドの間に配置され、
前記温度センス部は温度センスダイオードを含み、前記出力比較ダイオード部は前記温度センスダイオードに対して逆並列に接続された出力比較ダイオードを含む、
半導体装置。
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