JP7237859B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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JP7237859B2
JP7237859B2 JP2019566002A JP2019566002A JP7237859B2 JP 7237859 B2 JP7237859 B2 JP 7237859B2 JP 2019566002 A JP2019566002 A JP 2019566002A JP 2019566002 A JP2019566002 A JP 2019566002A JP 7237859 B2 JP7237859 B2 JP 7237859B2
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film
gas
layer
semiconductor layer
conductive film
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JPWO2019142080A1 (ja
JPWO2019142080A5 (https=
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安孝 中澤
貴士 羽持
貴之 大出
健一 岡崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
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    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
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    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
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    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

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  • Thin Film Transistor (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
JP2019566002A 2018-01-19 2019-01-11 半導体装置の作製方法 Active JP7237859B2 (ja)

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JP2018007194 2018-01-19
JP2018007194 2018-01-19
PCT/IB2019/050206 WO2019142080A1 (ja) 2018-01-19 2019-01-11 半導体装置の作製方法

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JPWO2019142080A1 JPWO2019142080A1 (ja) 2021-02-04
JPWO2019142080A5 JPWO2019142080A5 (https=) 2022-01-18
JP7237859B2 true JP7237859B2 (ja) 2023-03-13

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US (1) US11282965B2 (https=)
JP (1) JP7237859B2 (https=)
KR (1) KR102588958B1 (https=)
CN (1) CN111615744B (https=)
WO (1) WO2019142080A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111788664B (zh) 2018-03-01 2024-04-16 株式会社半导体能源研究所 半导体装置的制造方法
WO2020165698A1 (ja) * 2019-02-15 2020-08-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN112466931A (zh) 2020-11-27 2021-03-09 Tcl华星光电技术有限公司 电极结构及其制备方法、薄膜晶体管
JP7696076B2 (ja) * 2020-12-18 2025-06-20 日新電機株式会社 薄膜トランジスタの製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011135066A (ja) 2009-11-28 2011-07-07 Semiconductor Energy Lab Co Ltd 積層酸化物材料、半導体装置、および半導体装置の作製方法
JP2011171703A (ja) 2009-10-30 2011-09-01 Semiconductor Energy Lab Co Ltd 電圧調整回路
JP2014143410A (ja) 2012-12-28 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2015188068A (ja) 2014-03-11 2015-10-29 東京エレクトロン株式会社 プラズマ処理装置、基板処理システム、薄膜トランジスターの製造方法及び記憶媒体
JP2015198223A (ja) 2014-04-03 2015-11-09 株式会社ジャパンディスプレイ 表示装置およびその製造方法
JP2016213432A (ja) 2015-04-28 2016-12-15 Ｎｌｔテクノロジー株式会社 半導体素子、半導体素子の製造方法、フォトダイオードアレイおよび撮像装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI770659B (zh) 2008-07-31 2022-07-11 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US8278657B2 (en) * 2009-02-13 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
KR101460868B1 (ko) 2009-07-10 2014-11-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5708910B2 (ja) 2010-03-30 2015-04-30 ソニー株式会社 薄膜トランジスタおよびその製造方法、並びに表示装置
JP6059566B2 (ja) 2012-04-13 2017-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102071545B1 (ko) 2012-05-31 2020-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101870491B1 (ko) 2014-03-11 2018-06-22 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치, 기판 처리 시스템, 박막 트랜지스터의 제조 방법 및 기억 매체
JP2016119465A (ja) 2014-12-18 2016-06-30 株式会社半導体エネルギー研究所 結晶性半導体膜の作成方法、および半導体装置
US9941324B2 (en) * 2015-04-28 2018-04-10 Nlt Technologies, Ltd. Semiconductor device, method of manufacturing semiconductor device, photodiode array, and imaging apparatus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011171703A (ja) 2009-10-30 2011-09-01 Semiconductor Energy Lab Co Ltd 電圧調整回路
JP2011135066A (ja) 2009-11-28 2011-07-07 Semiconductor Energy Lab Co Ltd 積層酸化物材料、半導体装置、および半導体装置の作製方法
JP2014143410A (ja) 2012-12-28 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2015188068A (ja) 2014-03-11 2015-10-29 東京エレクトロン株式会社 プラズマ処理装置、基板処理システム、薄膜トランジスターの製造方法及び記憶媒体
JP2015198223A (ja) 2014-04-03 2015-11-09 株式会社ジャパンディスプレイ 表示装置およびその製造方法
JP2016213432A (ja) 2015-04-28 2016-12-15 Ｎｌｔテクノロジー株式会社 半導体素子、半導体素子の製造方法、フォトダイオードアレイおよび撮像装置

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JPWO2019142080A1 (ja) 2021-02-04
US11282965B2 (en) 2022-03-22
CN111615744B (zh) 2024-06-21
KR20200102470A (ko) 2020-08-31
CN111615744A (zh) 2020-09-01
KR102588958B1 (ko) 2023-10-12
US20200335609A1 (en) 2020-10-22
WO2019142080A1 (ja) 2019-07-25

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