CN111615744B - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN111615744B
CN111615744B CN201980009057.9A CN201980009057A CN111615744B CN 111615744 B CN111615744 B CN 111615744B CN 201980009057 A CN201980009057 A CN 201980009057A CN 111615744 B CN111615744 B CN 111615744B
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film
layer
semiconductor layer
gas
conductive film
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CN111615744A (zh
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中泽安孝
羽持贵士
大出贵之
冈崎健一
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
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    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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  • Thin Film Transistor (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
CN201980009057.9A 2018-01-19 2019-01-11 半导体装置的制造方法 Active CN111615744B (zh)

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JP2018007194 2018-01-19
JP2018-007194 2018-01-19
PCT/IB2019/050206 WO2019142080A1 (ja) 2018-01-19 2019-01-11 半導体装置の作製方法

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CN111615744B true CN111615744B (zh) 2024-06-21

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US (1) US11282965B2 (https=)
JP (1) JP7237859B2 (https=)
KR (1) KR102588958B1 (https=)
CN (1) CN111615744B (https=)
WO (1) WO2019142080A1 (https=)

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CN111788664B (zh) 2018-03-01 2024-04-16 株式会社半导体能源研究所 半导体装置的制造方法
WO2020165698A1 (ja) * 2019-02-15 2020-08-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN112466931A (zh) 2020-11-27 2021-03-09 Tcl华星光电技术有限公司 电极结构及其制备方法、薄膜晶体管
JP7696076B2 (ja) * 2020-12-18 2025-06-20 日新電機株式会社 薄膜トランジスタの製造方法

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JPWO2019142080A1 (ja) 2021-02-04
US11282965B2 (en) 2022-03-22
JP7237859B2 (ja) 2023-03-13
KR20200102470A (ko) 2020-08-31
CN111615744A (zh) 2020-09-01
KR102588958B1 (ko) 2023-10-12
US20200335609A1 (en) 2020-10-22
WO2019142080A1 (ja) 2019-07-25

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