KR102588958B1 - 반도체 장치의 제작 방법 - Google Patents

반도체 장치의 제작 방법 Download PDF

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KR102588958B1
KR102588958B1 KR1020207021123A KR20207021123A KR102588958B1 KR 102588958 B1 KR102588958 B1 KR 102588958B1 KR 1020207021123 A KR1020207021123 A KR 1020207021123A KR 20207021123 A KR20207021123 A KR 20207021123A KR 102588958 B1 KR102588958 B1 KR 102588958B1
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film
layer
semiconductor layer
gas
conductive
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KR20200102470A (ko
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야스타카 나카자와
다카시 하모치
다카유키 오히데
겐이치 오카자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H01L29/66969—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H01L21/02274—
    • H01L29/24—
    • H01L29/41733—
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    • H01L29/7869—
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
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    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
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    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
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    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
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    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

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  • Thin Film Transistor (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
KR1020207021123A 2018-01-19 2019-01-11 반도체 장치의 제작 방법 Active KR102588958B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018007194 2018-01-19
JPJP-P-2018-007194 2018-01-19
PCT/IB2019/050206 WO2019142080A1 (ja) 2018-01-19 2019-01-11 半導体装置の作製方法

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KR20200102470A KR20200102470A (ko) 2020-08-31
KR102588958B1 true KR102588958B1 (ko) 2023-10-12

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US (1) US11282965B2 (https=)
JP (1) JP7237859B2 (https=)
KR (1) KR102588958B1 (https=)
CN (1) CN111615744B (https=)
WO (1) WO2019142080A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111788664B (zh) 2018-03-01 2024-04-16 株式会社半导体能源研究所 半导体装置的制造方法
WO2020165698A1 (ja) * 2019-02-15 2020-08-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN112466931A (zh) 2020-11-27 2021-03-09 Tcl华星光电技术有限公司 电极结构及其制备方法、薄膜晶体管
JP7696076B2 (ja) * 2020-12-18 2025-06-20 日新電機株式会社 薄膜トランジスタの製造方法

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US20100207118A1 (en) * 2009-02-13 2010-08-19 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US20110127521A1 (en) * 2009-11-28 2011-06-02 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
JP2014007381A (ja) * 2012-04-13 2014-01-16 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2016213432A (ja) * 2015-04-28 2016-12-15 Ｎｌｔテクノロジー株式会社 半導体素子、半導体素子の製造方法、フォトダイオードアレイおよび撮像装置

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TWI770659B (zh) 2008-07-31 2022-07-11 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
KR101460868B1 (ko) 2009-07-10 2014-11-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011052366A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
JP5708910B2 (ja) 2010-03-30 2015-04-30 ソニー株式会社 薄膜トランジスタおよびその製造方法、並びに表示装置
KR102071545B1 (ko) 2012-05-31 2020-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2014143410A (ja) 2012-12-28 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6531422B2 (ja) 2014-03-11 2019-06-19 東京エレクトロン株式会社 プラズマ処理装置、基板処理システム、薄膜トランジスターの製造方法及び記憶媒体
KR101870491B1 (ko) 2014-03-11 2018-06-22 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치, 기판 처리 시스템, 박막 트랜지스터의 제조 방법 및 기억 매체
JP2015198223A (ja) 2014-04-03 2015-11-09 株式会社ジャパンディスプレイ 表示装置およびその製造方法
JP2016119465A (ja) 2014-12-18 2016-06-30 株式会社半導体エネルギー研究所 結晶性半導体膜の作成方法、および半導体装置
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US20100207118A1 (en) * 2009-02-13 2010-08-19 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US20110127521A1 (en) * 2009-11-28 2011-06-02 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
JP2014007381A (ja) * 2012-04-13 2014-01-16 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2016213432A (ja) * 2015-04-28 2016-12-15 Ｎｌｔテクノロジー株式会社 半導体素子、半導体素子の製造方法、フォトダイオードアレイおよび撮像装置

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JPWO2019142080A1 (ja) 2021-02-04
US11282965B2 (en) 2022-03-22
JP7237859B2 (ja) 2023-03-13
CN111615744B (zh) 2024-06-21
KR20200102470A (ko) 2020-08-31
CN111615744A (zh) 2020-09-01
US20200335609A1 (en) 2020-10-22
WO2019142080A1 (ja) 2019-07-25

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