JP7231548B2 - METHOD AND APPARATUS FOR MANUFACTURING THIN PLATE-LIKE MEMBER - Google Patents

Description

TECHNICAL FIELD The present invention relates to a manufacturing method and manufacturing apparatus for a thin plate member.

Conventionally, a method for processing a workpiece is known (see, for example, Patent Document 1).
The method of Patent Document 1 irradiates a workpiece held by a holding means with a laser beam to form a modified surface inside the workpiece. Then, part of the workpiece is peeled off with this modified surface as a boundary.

This patent document 1 also discloses that a wafer as an object to be processed can be processed to be thin from a general thickness. In this case, the first surface of the wafer is directly held by suction on the upper surface of the chuck table, and the suction surface of the suction pad is brought into contact with the second surface. By sucking the wafer onto the suction pad, the wafer can be divided into a first thinned wafer having a first surface and a second thinned wafer having a second surface with the modified surface as a boundary. .

Japanese Unexamined Patent Application Publication No. 2015-30005

However, in the method of Patent Document 1, if the wafer cannot be divided only by the suction of the suction pad, it is conceivable to raise the suction pad with a driving device, but the following problems may occur.
The upper surface of the chuck table is generally porous. For this reason, the first surface of the wafer has a portion that is sucked by the chuck table (hereinafter referred to as "adsorbed portion") and a portion that is not adsorbed (hereinafter referred to as "non-sucked portion"). become.
When the suction pad rises, an upward force due to the lifting of the suction pad and a downward force due to the suction of the chuck table act on the suction portion, but no downward force acts on the non-suction portion. . In addition, there is a limit to the adsorption power in an atmosphere of atmospheric pressure. Furthermore, since the wafer is thin and easily deformed, the non-sucking portion may bend upward, and the wafer may be broken without being split.

SUMMARY OF THE INVENTION An object of the present invention is to provide a manufacturing method and a manufacturing apparatus for a thin plate-shaped member that can appropriately manufacture a thin plate-shaped member.

In the method of manufacturing a thin plate-shaped member of the present invention, the first adhesive surface of the first double-sided adhesive sheet is attached to the support surface of the first rigid support, and the first double-sided adhesive is applied to the entire first surface of the plate-shaped member. affixing a second adhesive surface of a sheet; forming a boundary layer parallel to the first surface inside the plate-like member; a step of detachably fixing the first holding means and the first rigid support so that the first holding means is positioned at the second position of the plate-like member; a step of holding from the surface side, and dividing the plate-like member into a first thinned plate-like member having the first surface and a second thinned plate-like member having the second surface with the boundary layer as a boundary. and a step of relatively moving the first holding means and the second holding means so as to divide the first holding means and the second holding means.

In the method for manufacturing a thin plate-shaped member of the present invention, the step of holding the plate-shaped member from the second surface side by the second holding means includes applying a second double-faced adhesive sheet to the supporting surface of the second rigid support. The first adhesive surface is attached, the second adhesive surface of the second double-sided adhesive sheet is attached to the entire second surface of the plate-like member, and the second adhesive sheet is attached to the opposite side of the plate-like member with the second hard support interposed therebetween. Preferably, the second holding means and the second rigid support are detachably fixed such that the second holding means is positioned.
Moreover, in the manufacturing method of the thin plate-like member of the present invention, it is preferable that the plate-like member is a wafer.

The apparatus for manufacturing a thin plate-shaped member of the present invention comprises: a first rigid support having a supporting surface to which the first adhesive surface of the first double-sided adhesive sheet is adhered; Boundary layer forming means for forming a boundary layer parallel to the first surface, first holding means, and the plate-shaped member with the first hard support sandwiched inside the plate-shaped member attached to the adhesive surface; a first fixing means for detachably fixing the first holding means and the first rigid support so that the first holding means is located on the opposite side of the member; a first thinned plate-shaped member having the first surface, and a second thinned plate-shaped member having the second surface, with the boundary layer as a boundary, the plate-shaped member It is characterized by comprising relative movement means for relatively moving the first holding means and the second holding means so as to be divided into members.

In the apparatus for manufacturing a thin plate-shaped member of the present invention, a second rigid support having a support surface on which the first adhesive surface of the second double-sided adhesive sheet is adhered, and the plate-shaped member sandwiching the second hard support. second fixing means for detachably fixing the second holding means and the second rigid support so that the second holding means is located on the opposite side of the second double-faced adhesive sheet; 2. It is preferable that the adhesive surface is formed in a size that allows the entire second surface of the plate member to be attached.

ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method and manufacturing apparatus of a thin plate-shaped member which can manufacture a thin plate-shaped member appropriately can be provided.

FIG. 4 is an operation explanatory view of the thin wafer manufacturing apparatus according to the embodiment of the present invention; FIG. 1B is an operation explanatory diagram of the thin wafer manufacturing apparatus according to the embodiment, showing a state following FIG. 1A. FIG. 1B is an operation explanatory view of the thin wafer manufacturing apparatus according to the embodiment, showing a state following FIG. 1B; FIG. 1C is an explanatory view of the operation of the thin wafer manufacturing apparatus according to the embodiment, showing a state subsequent to FIG. 1C; FIG. 2B is an explanatory view of the operation of the thin wafer manufacturing apparatus according to the embodiment, showing a state subsequent to FIG. 2A. FIG. 4 is a schematic vertical cross-sectional view of a wafer after forming a plurality of modified portions in a modification of the embodiment of the present invention; FIG. 4 is a schematic cross-sectional view of a wafer after forming a plurality of modified portions by the deformation; FIG. 5 is a schematic vertical cross-sectional view of a wafer after forming a plurality of modified portions in another modification of the embodiment of the present invention; FIG. 11 is a schematic cross-sectional view of a wafer after forming a plurality of modified portions in the other modification;

[Embodiment]
An embodiment of the present invention will be described below with reference to the drawings.
Note that the X-axis, Y-axis, and Z-axis in this embodiment are orthogonal to each other, and the X-axis and Y-axis are axes within a predetermined plane, and the Z-axis is an axis orthogonal to the predetermined plane. do. Further, in the present embodiment, when directions are indicated, "up" is the direction of the arrow on the Z axis and "down" is the opposite direction, "left" is the direction of the arrow on the X axis and "right" is the opposite direction, and " The direction of the arrow on the Y-axis is "front" and the opposite direction is "back".

In FIGS. 1A to 1C and FIGS. 2A and 2B, the thinned wafer manufacturing apparatus 100 as a thinned plate-shaped member includes a support surface 111 on which a first adhesive surface AT11 of a first double-sided adhesive sheet AT1 is adhered. In the inside of the rigid support 110 and the wafer WF as a plate member in which the entire first surface WF1 is attached to the second adhesive surface AT12 of the first double-sided adhesive sheet AT1, a boundary layer parallel to the first surface WF1 is formed. A boundary layer forming means 120 for forming a crack layer CR, a lower table 130 as a first holding means, and a lower table 130 arranged so that the lower table 130 is located on the opposite side of the wafer WF with the first hard support 110 therebetween. a first fixing means 140 for detachably fixing 130 and the first rigid support 110; An upper table 160 as a second holding means for holding the wafer WF from a second surface WF2 opposite to the first surface WF1, and the upper table 160 is positioned on the opposite side of the wafer WF with the second hard support 150 interposed therebetween. a second fixing means 170 for detachably fixing the upper table 160 and the second hard support 150 so as to detachably fix the wafer WF with a crack layer CR as a boundary, and a first thinning structure having a first surface WF1; The lower table 130 and the upper table 160 are placed relative to each other so as to be divided into a first thinned wafer WT1 as a plate-like member and a second thinned wafer WT2 as a second thinned plate-like member having a second front surface WF2. and a relative movement means 180 for moving.

The wafer WF is not particularly limited as long as it is made of a material that can be modified by laser irradiation. The laser is preferably a laser for irradiation in the stealth dicing method. The material of the wafer WF is preferably selected from the group consisting of silicon, silicon nitride, gallium nitride, gallium arsenide, SiC (silicon carbide), sapphire, and glass, for example. The material of the wafer WF is more preferably silicon, and more preferably monocrystalline silicon. It is also preferable that the wafer WF be made of a material having a crystal orientation.

According to the method for manufacturing a wafer according to the present embodiment, it is possible to further reduce the thickness of a plate-like member (wafer) having a small thickness, rather than an object to be processed having a large thickness such as an ingot. The thickness of the wafer WF is preferably 3 mm or less. At least one of the thickness of the first thinned wafer WT1 and the second thinned wafer WT2 formed by dividing the wafer WF is preferably 10 μm or more, more preferably 30 μm or more.

The first hard support 110 and the second hard support 150 are preferably plate-shaped, and the material and shape thereof may be appropriately determined in consideration of mechanical strength. Examples of materials include metal materials such as SUS; non-metallic inorganic materials such as glass and silicon wafers; resin materials such as polyimide and polyamideimide; composite materials such as glass epoxy resin. Glass, silicon wafers and the like are preferred.
The thicknesses of the first hard support 110 and the second hard support 150 may be appropriately determined in consideration of mechanical strength, handleability, etc., and are preferably, for example, 100 μm or more and 50 mm or less.
As will be described later, the first hard support 110 may not be deformed when the upper table 160 rotates and a force acts on the wafer WF in a direction away from the first double-sided adhesive sheet AT1. It is preferable that the strength is 50 MPa or more.
As will be described later, the hardness of the second hard support 150 is such that it does not deform when a force acts on the second double-faced adhesive sheet AT2 in a direction away from the wafer WF due to the rotation of the upper table 160. Well, for example, it is preferable that the bending strength is 50 MPa or more.
The boundary layer forming means 120 has a laser irradiator 121 .
The first fixing means 140 includes a lower pressure reducing means 141 configured by a pressure reducing pump, a vacuum ejector, or the like, and reduces the internal space of the lower table 130 connected via a pipe 142 to hold the lower table 130 . The surface 131 is configured to hold the first rigid support 110 by suction.
The second fixing means 170 includes an upper pressure reducing means 171 configured in the same manner as the lower pressure reducing means 141, and reduces the pressure in the inner space of the upper table 160 connected via a pipe 172 to hold the upper table 160. The surface 161 is configured to hold the second hard support 150 by suction.
The relative movement means 180 has a rotating motor 181 as a driving device arranged on the side of the lower table 130 . An output shaft 182 of the rotary motor 181 is connected to an extension 162 extending downward from the end of the upper table 160 .

A procedure for manufacturing the first thinned wafer WT1 and the second thinned wafer WT2 from the wafer WF in the thinned wafer manufacturing apparatus 100 described above will be described.
First, as shown in FIG. 1A, a first rigid support 110 having a supporting surface 111 to which the first adhesive surface AT11 of the first double-sided adhesive sheet AT1 is adhered is prepared. The entire first surface WF1 is attached to the second adhesive surface AT12 as indicated by the solid line. At this time, the first surface WF1 is attached to the second adhesive surface AT12 so as not to form air bubbles. The entire area of the first adhesive surface AT11 corresponding to the first surface WF1 is also preferably attached to the first rigid support 110 so as not to form air bubbles. The method and order of attaching the first double-sided adhesive sheet AT1 to the first rigid support 110 and the first surface WF1 are not particularly limited. 1 may be applied to a rigid support 110;

Next, as shown in FIG. 1B, an operator or a conveying means (not shown) such as an articulated robot or a belt conveyor moves the wafer WF and the first rigid support 110 below the boundary layer forming means 120 to The layer forming means 120 drives the laser irradiator 121, and a relative movement mechanism (not shown) relatively moves the laser irradiator 121 and the first hard support 110 in the horizontal direction. The laser beam LB from the laser irradiator 121 is focused on the inside of the wafer WF. A crack layer CR is formed along the XY plane throughout the inside of the wafer WF. When the crack layer CR is formed all over the inside of the wafer WF, the boundary layer forming means 120 stops driving the laser irradiator 121 .

Thereafter, as shown in FIG. 2A, the lower table 130 is positioned on the opposite side of the wafer WF across the first hard support 110, and the first adhesive surface of the second double-sided adhesive sheet AT2 is attached to the second hard support 150. The second adhesive surface AT22 of the second double-sided adhesive sheet AT2 is attached to the entire second surface WF2 of the wafer WF, and the upper table 160 is positioned on the opposite side of the wafer WF with the second hard support 150 interposed therebetween. to be in a state to At this time, the second surface WF2 is attached to the second adhesive surface AT22 so as not to form air bubbles. The entire area of the first adhesive surface AT21 corresponding to the second surface WF2 is also preferably attached to the second hard support 150 so as not to form air bubbles.
Then, the first fixing means 140 and the second fixing means 170 drive the lower decompression means 141 and the upper decompression means 171, respectively, so that the first rigid support 110 is held by the holding surface 131 of the lower table 130, and the second rigid support is held. The supports 150 are held by suction on the holding surface 161 of the upper table 160 . In addition, the first hard support 110 is positioned on the lower table 130, the second double-sided adhesive sheet AT2 is attached to the second hard support 150 and the second surface WF2, or the second hard support 150 is placed upward. The method and order of positioning under the table 160 are not particularly limited. The order of application may be reversed.

After that, as shown in FIG. 2B, the relative movement means 180 drives the rotation motor 181 to rotate the upper table 160 in the clockwise direction to divide the wafer WF along the crack layer CR, thereby thinning the wafer WF. A first thinned wafer WT1 and a second thinned wafer WT2 are formed.

At this time, since the second adhesive surface AT12 of the first double-sided adhesive sheet AT1 is adhered to the entire first surface WF1 of the wafer WF, and the first adhesive surface AT11 is adhered to the first hard support 110, the upper table 160 When a force acts on the wafer WF in a direction away from the first double-sided adhesive sheet AT1 due to the rotation of , the upper table 160 rotates while the bending of the entire wafer WF is suppressed by the first rigid support 110 . Therefore, the wafer WF can be divided without being damaged, and the first thinned wafer WT1 can be properly manufactured.
In addition, since the second adhesive surface AT22 of the second double-sided adhesive sheet AT2 is adhered to the entire second surface WF2 of the wafer WF, and the first adhesive surface AT21 is adhered to the second hard support 150, the upper table 160 is When a force acts on the second double-sided adhesive sheet AT2 in a direction away from the wafer WF due to rotation, the upper table 160 rotates while the bending of the entire wafer WF is suppressed by the second hard support 150 . Therefore, the wafer WF can be divided without being damaged, and the second thinned wafer WT2 can be properly manufactured.
Furthermore, since the first hard support 110 and the second hard support 150 support the first thinned wafer WT1 and the second thinned wafer WT2, the first hard support 110 and the second hard support By holding the body 150, the transfer of the first thinned wafer WT1 and the second thinned wafer WT2 is facilitated.

Next, when an operator or a transfer means (not shown) holds the first thinned wafer WT1 and the second thinned wafer WT2, the first fixing means 140 and the second fixing means 170 move the lower pressure reducing means 141 and the lower pressure reducing means 141, respectively. The driving of the upper depressurizing means 171 is stopped, and the first hard support 110 and the second hard support 150 supporting the first thinned wafer WT1 and the second thinned wafer WT2 are released from suction holding.
In this embodiment, as the first fixing means 140 and the second fixing means 170, the first hard support 110 and the second hard support 150 are fixed by suction. It is not necessary to remove the adhesive component adhering to each of the holding surface 131 of the lower table 130 and the holding surface 161 of the upper table 160 after releasing the adsorption holding, unlike the case of fixing with an agent, and it is possible to suppress the deterioration of workability. .
After that, when a transport means (not shown) transports the first thinned wafer WT1 and the second thinned wafer WT2 to the next process, each means drives its respective drive device to return each member to its initial position. Similar operations are repeated.

According to the embodiment as described above, the first thinned wafer WT1 and the second thinned wafer WT2 can be appropriately manufactured.

[Modification of embodiment]
As described above, the best configuration, method, etc. for carrying out the present invention are disclosed in the above description, but the present invention is not limited thereto. That is, although the present invention has been particularly illustrated and described primarily with respect to certain embodiments, it is understood that there may be modifications to the above-described embodiments without departing from the spirit and scope of the invention. Various modifications can be made by those skilled in the art in terms of materials, quantity, and other detailed configurations. In addition, the descriptions that limit the shape, material, etc. disclosed above are exemplified to facilitate understanding of the present invention, and do not limit the present invention. The description by the name of the member that removes some or all of the limitations such as is included in the present invention.

For example, if the first hard support 110 is applied, the wafer WF can be attracted directly or via the second double-sided adhesive sheet AT2 to the holding surface 161 of the upper table 160 without applying the second hard support 150 . You can keep it.
If the second hard support 150 is applied, the wafer WF is held by suction on the holding surface 131 of the lower table 130 directly or via the first double-sided adhesive sheet AT1 without applying the first hard support 110. In this case, the second rigid support 150 and the second double-sided adhesive sheet AT2 correspond to the first rigid support and the first double-sided adhesive sheet of the present invention, respectively.

The boundary layer forming means 120 may irradiate the wafer WF before being divided with the laser beam LB. good too.
The boundary layer forming means 120 may irradiate the wafer WF to which the first double-sided adhesive sheet AT1 is attached with the laser beam LB from the first double-sided adhesive sheet AT1 side, or may irradiate the wafer WF to which the second double-sided adhesive sheet AT2 is attached. The wafer WF may be irradiated with the laser beam LB from the first double-sided adhesive sheet AT1 side or the second double-sided adhesive sheet AT2 side, or may be irradiated with the laser beam LB from the outer peripheral surface side of the wafer WF. , the first thinned wafer WT1 side, the second thinned wafer WT2 side, and the outer peripheral surface side.
When at least one of the first hard support 110 and the second hard support 150 is made of a material that transmits the laser beam LB, the boundary layer forming means 120 is made of a material that transmits the laser beam LB. Alternatively, the laser beam LB may be irradiated from the support side.
The boundary layer forming means 120 may irradiate the wafer WF sucked and held by the lower table 130 or the upper table 160 with the laser beam LB.
The boundary layer forming means 120 may employ a laser irradiator capable of irradiating a laser beam having a linear focus (linear laser beam) or a laser beam having a planar focus (planar laser beam). of laser irradiators may be employed.
The boundary layer forming means 120 can arbitrarily determine the position of the focal point, and the thickness ratio between the formed first thinned wafer WT1 and the second thinned wafer WT2 may be 50:50 or 1 It may be 99 to 1, or 1000 to 1, and the focus can be determined according to the thickness of the desired thinned wafer.
The boundary layer forming unit 120 may apply energy rays such as X-rays and ultraviolet rays, vibration, pulsation, and the like to form the crack layer CR in the intermediate portion in the thickness direction of the wafer WF.
The boundary layer forming means 120 may form a modified layer, voids, etc., in addition to the crack layer. Note that the crack layer is a layer that chemically or physically causes a crack or split in the wafer WF, and the modified layer is a layer that chemically or physically changes the properties and strength of the wafer WF. A weakened or softened layer, and voids include voids or substantially voids that are in contact with each other across the voids.
The boundary layer forming means 120 may partially form a boundary along the XY plane inside the wafer WF.

The boundary layer forming means 120 may form a boundary layer composed of a plurality of reformed portions RP as shown in FIGS. 3 and 4 instead of the crack layer CR. 3 and 4, and FIGS. 5 and 6, which will be described later, hatching is omitted from the viewpoint of the visibility of the drawings.
The boundary layer forming means 120 is not particularly limited as long as it is means for irradiating the laser beam LB capable of modifying the semiconductor wafer. As the boundary layer forming means 120, for example, an apparatus employed in the stealth dicing method can be used.

In the laser irradiation step for forming the boundary layer, the laser beam LB may be irradiated from the second surface WF2 side of the wafer WF. A plurality of modified portions RP are formed along the dividing plane DP inside the wafer WF by the irradiation of the laser beam LB. That is, the planar region inside the wafer where the plurality of modified portions RP are present corresponds to the dividing plane DP. The wafer WF is divided with the reforming portion RP as a starting point.
When the wafer WF is made of a material having a crystal orientation, it is preferable that the division plane DP and the crystal orientation match. If the division surface DP and the crystal orientation match, the surfaces (surfaces corresponding to the division surface DP) of the first thinned wafer WT1 and the second thinned wafer WT2 appearing by dividing the wafer WF can be made smoother. can do.
The laser irradiation conditions of the laser irradiation device 121 are set so that the reformed portion RP can be formed inside the wafer WF. Examples of laser irradiation conditions include, but are not limited to, laser output, laser frequency, laser irradiation position, and laser wavelength.

In this specification, the modified portion is a portion weakened or softened by changing the properties and strength of the wafer WF. In this specification, the modified portion is a region including a laser irradiation point irradiated with a laser inside the wafer, and a peripheral portion formed around the center with the laser irradiation point as the center. Say. The modification intensity inside the wafer is maximum at the laser irradiation point. The modification intensity of the peripheral portion decreases as the distance from the laser irradiation point increases.

Although FIG. 3 and FIG. 4 show the modified portion RP having a circular cross section, the shape and size of the modified portion in this specification are the shapes shown in FIGS. is not limited to
It is also preferable that the reformed portion RP is formed over the entire dividing surface DP. The number of reformed portions RP to be formed is not particularly limited. For example, depending on the material of the wafer WF and the intensity of laser modification, the number of reformed portions RP to be formed may be set so as to facilitate division into the first thinned wafer WT1 and the second thinned wafer WT2. can. Also, the number of reformed regions RP to be formed can be set in consideration of the productivity of semiconductor wafers.

Also, for example, as shown in FIGS. 3 and 4, the plurality of reforming sections RP may overlap each other.
At this time, it is preferable to irradiate the laser beam LB along the splitting surface DP at intervals of 1 μm or more and 350 μm or less. That is, it is preferable to irradiate the laser beam LB so that the distance D between points irradiated with the laser beam LB (laser irradiation points) is 1 μm or more and 350 μm or less. If the distance D between the laser irradiation points is 1 μm or more, the productivity is improved. If the distance between the laser irradiation points is 350 μm or less, it is possible to suppress the problem that cracks are likely to occur in the thickness direction of the wafer WF. The distance D between the laser irradiation points may be the same or different in all the modified regions RP as long as it is within the range of 1 μm or more and 350 μm or less.

Also, as shown in FIGS. 5 and 6, the plurality of reforming sections RP may be separated from each other.
At this time, it is preferable to irradiate the laser beam LB along the splitting surface DP at intervals of 1 μm or more and 350 μm or less. That is, it is preferable to irradiate the laser beam LB such that the distance D1 between the points irradiated with the laser beam LB (laser irradiation points) is 1 μm or more and 350 μm or less. If the distance D1 between the laser irradiation points is 1 μm or more, the productivity is improved. If the distance between the laser irradiation points is 350 μm or less, it is possible to suppress the problem that cracks are likely to occur in the thickness direction of the wafer WF. The interval D1 between the laser irradiation points may be the same or different in all the modified regions RP as long as it is within the range of 1 μm or more and 350 μm or less.
The interval between the adjacent modified portions RP (the interval between the edge of one modified portion and the edge of the other modified portion) is not particularly limited as long as it can be divided in the planar direction of the wafer WF.

In the configurations of FIGS. 3, 4, 5 and 6, the distance between the laser irradiation points changes, for example, the moving speed of at least one of the table (not shown) holding the first rigid support 110 and the laser irradiator 32. It is possible to adjust to a predetermined distance by
In the configurations of FIGS. 3, 4, 5 and 6, the wafer WF is divided along the dividing plane DP on which the plurality of modified portions RP are formed to divide the first thinned wafer WT1, and A second thinned wafer WT2 is formed.
As shown in FIGS. 3 and 4, if a plurality of modified regions RP are formed so as to overlap each other, more modified regions RP exist along the dividing plane DP, making it easier to divide the wafer WF. .
As shown in FIGS. 5 and 6, forming a plurality of modified portions RP so as not to overlap each other can reduce the number of laser irradiation points and improve the productivity of the thinned plate member.

The shape and size of the reformed portion are not limited to those shown in FIGS. 3, 4, 5 and 6. FIG. Examples of the shape of the modified portion include a spherical shape, an oval spherical shape, a columnar shape, a prismatic shape, a conical shape, and a pyramidal shape. The size of the modified portion is not particularly limited as long as the plate member can be divided into a plurality of thinned plate members. It is preferable that the modified portion has a size that takes into consideration the thickness of the plate member before division. This is because if the modified portion is too large in the thickness direction of the plate member, cracks may occur in the thickness direction. Therefore, the modified portion may be formed so as to be split in the plane direction along the splitting surface.

In addition, although a mode in which a plate-shaped member is divided into two thinned plate-shaped members has been described as an example, as another mode, there is a mode in which a plate-shaped member is divided into three or more thinned plate-shaped members. mentioned. For example, when dividing into three thin plate-like members, two dividing surfaces (a first dividing surface and a second dividing surface) are set when setting the dividing surfaces inside the plate-like member, and a second dividing surface is set. A plurality of modified portions RP may be formed along one divided surface, and a plurality of modified portions RP may be formed along the second divided surface. Further, as another mode, there is a mode in which a thinned plate-shaped member is used to perform laser irradiation and division to form a further thinned plate-shaped member.

The first fixing means 140 is configured to fix the first hard support 110 to the lower table 130 by chucking means such as a mechanical chuck or chuck cylinder, coulomb force, adhesive, adhesive, magnetic force, Bernoulli adsorption, driving equipment, or the like. Alternatively, the second fixing means 170 may be similarly configured.
When dividing the wafer WF, the relative movement means 180 may relatively move the lower table 130 and the upper table 160 in the vertical direction to separate the wafer WF in the thickness direction of the wafer WF. Even if it is relatively moved linearly in a plane direction parallel to the holding surface 131 of the upper table 160 or the holding surface 161 of the upper table 160, or relatively rotated in the circumferential direction within a plane parallel to the holding surface 131 or the holding surface 161 Well, at least one of the lower table 130 and the upper table 160 may be moved or rotated.

The wafer WF may have a circuit surface, and the circuit surface may be on the first surface WF1 side, the second surface WF2 side, or both surface sides. In the case of forming the circuit surface in , the split surface (the surface on which the crack layer CR was formed) divided into the first thinned wafer WT1 and the second thinned wafer WT2 may be used.

In addition, the following points can also be applied to the above-described embodiments and modifications of the embodiments.
The material, type, shape, etc. of the first double-sided adhesive sheet AT1, the second double-sided adhesive sheet AT2, and the plate member are not particularly limited. For example, the first double-sided adhesive sheet AT1 and the second double-sided adhesive sheet AT2 may be circular, elliptical, polygonal such as triangular or quadrangular, or other shapes. In the case where a first double-sided adhesive sheet AT1 and a second double-sided adhesive sheet AT2 with heat-sensitive adhesive properties are employed, the first double-sided adhesive sheet AT1 and the second double-sided adhesive sheet AT1 and the second double-sided adhesive sheet AT2 may The adhesive sheet AT2 may be adhered by an appropriate method such as providing a heating means such as an appropriate coil heater or a heating side of a heat pipe for heating the adhesive sheet AT2. Further, the first double-sided adhesive sheet AT1 and the second double-sided adhesive sheet AT2 may have a single or multiple intermediate layer consisting of only an adhesive layer, or may have a single or multiple layer without an intermediate layer. can be Plate-shaped members include, for example, foods, resin containers, semiconductor wafers (silicon semiconductor wafers, compound semiconductor wafers, etc.), circuit boards, information recording substrates (optical discs, etc.), glass plates, steel plates, pottery, wooden boards, and resins. Plates and the like, as well as members and articles of any shape, can also be targeted. In addition, the first double-sided adhesive sheet AT1 and the second double-sided adhesive sheet AT2 are replaced with functional and application readings, such as information recording labels, decorative labels, protective sheets, dicing tapes, die attach films, die bonding Any sheet, film, tape, or the like in any shape, such as a tape, recording layer-forming resin sheet, etc., can be attached to any plate-like member as described above.

The means and steps in the present invention are not limited in any way as long as they can perform the operations, functions or steps described for those means and steps. The process is not limited at all. For example, as long as the first rigid support can adhere the first adhesive surface of the first double-sided adhesive sheet to the supporting surface, the first rigid support is anything within the technical scope of the common general technical knowledge at the time of filing. It is not limited (description of other means and steps is omitted).
In addition, the drive equipment in the above embodiments includes electric equipment such as rotating motors, direct-acting motors, linear motors, single-axis robots, articulated robots, actuators such as air cylinders, hydraulic cylinders, rodless cylinders and rotary cylinders. In addition, it is also possible to employ a direct or indirect combination of them (some of which overlap with those exemplified in the embodiments).

REFERENCE SIGNS LIST 100 manufacturing apparatus 110 first rigid support 111 support surface 120 boundary layer forming means 130 lower table (first holding means)
140 first fixing means 150 second rigid support 160 upper table (second holding means)
170 second fixing means 180 relative moving means AT1 first double-sided adhesive sheet AT11 first adhesive surface AT12 second adhesive surface AT2 second double-sided adhesive sheet AT21 first adhesive surface AT22 second adhesive surface CR crack layer (boundary layer)
WF Wafer (plate-like member)
WF1 first surface WF2 second surface WT1 first thinned wafer WT2 second thinned wafer

Claims (3)

a step of attaching the first adhesive surface of the first double-sided adhesive sheet to the supporting surface of the first rigid support, and attaching the second adhesive surface of the first double-sided adhesive sheet to the entire first surface of the plate-like member;
forming a boundary layer parallel to the first surface inside the plate-like member to which the first rigid support is attached via the first double-sided adhesive sheet;
detachably fixing the first holding means and the first rigid support such that the first holding means is located on the opposite side of the plate member with the first rigid support interposed therebetween;
a step of holding the plate-like member from the second surface side of the plate-like member by a second holding means;
With the boundary layer as a boundary, the plate-shaped member is divided into a first thinned plate-shaped member having the first surface and a second thinned plate-shaped member having the second surface. A step of relatively moving the first holding means and the second holding means ,
The step of holding the plate member from the second surface side by the second holding means includes:
The first adhesive surface of the second double-sided adhesive sheet is attached to the supporting surface of the second rigid support, the second adhesive surface of the second double-sided adhesive sheet is attached to the entire second surface of the plate member, and the second adhesive sheet is attached to the entire second surface of the plate-shaped member. 2. A thin type device characterized in that said second holding means and said second hard support are detachably fixed such that said second holding means is located on the opposite side of said plate-like member with said hard support interposed therebetween. A method for manufacturing a chemical plate-shaped member. In the method for manufacturing a thin plate-shaped member according to claim 1,
A method for manufacturing a thin plate member, wherein the plate member is a wafer. a first rigid support having a supporting surface on which the first adhesive surface of the first double-sided adhesive sheet is attached;
a second rigid support having a supporting surface on which the first adhesive surface of the second double-sided adhesive sheet is attached;
A boundary forming a boundary layer parallel to the first surface inside the plate-like member having the entire first surface attached to the second adhesive surface of the first double-sided adhesive sheet to which the first hard support is attached. a layering means;
a first holding means;
a first fixing that detachably fixes the first holding means and the first hard support such that the first holding means is located on the opposite side of the plate member with the first hard support interposed therebetween; means and
a second holding means for holding the plate member from the second surface side;
a second fixing that detachably fixes the second holding means and the second hard support such that the second holding means is located on the opposite side of the plate member with the second hard support interposed therebetween; means and
With the boundary layer as a boundary, the plate-shaped member is divided into a first thinned plate-shaped member having the first surface and a second thinned plate-shaped member having the second surface. 1 relative movement means for relatively moving the holding means and the second holding means,
An apparatus for manufacturing a thin plate-like member, wherein the second adhesive surface of the second double-sided adhesive sheet is formed to have a size that allows the entire second surface of the plate-like member to be attached.

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