JPWO2019044530A1 - Manufacturing method and manufacturing equipment for thin plate-shaped members - Google Patents

Abstract

In the method of manufacturing the thin plate-shaped member, the first adhesive surface (AT11) of the first double-sided adhesive sheet (AT1) is attached to the support surface (111) of the first hard support (110), and the plate-like member (WF) is attached. ), A step of attaching the second adhesive surface (AT12) to the entire first surface (WF1), a step of forming a boundary layer (CR) inside the plate-shaped member (WF), and a first hard support (1st hard support). The first holding means (130) and the first hard support (110) can be detached so that the first holding means (130) is located on the opposite side of the plate-shaped member (WF) with the 110) sandwiched between them. The plate-shaped member (WF) is held from the second surface (WF2) side by the second holding means (160), and the plate-shaped member is separated from the boundary layer (CR). The first holding means (130) is divided into a first thin plate-shaped member having a first surface (WF1) and a second thin plate-shaped member having a second surface (WF2). ) And the second holding means (160) are relatively moved.

Description

The present invention relates to a method for manufacturing a thin plate-shaped member and a manufacturing apparatus.

Conventionally, a method of processing a work piece is known (see, for example, Patent Document 1).
In the method of Patent Document 1, a work piece held by the holding means is irradiated with a laser beam to form a modified surface inside the work piece. Then, a part of the work piece is peeled off with this modified surface as a boundary.

Patent Document 1 also discloses that a wafer as a work piece can be processed thin from a general thickness. In this case, the first surface of the wafer is directly sucked and held by the upper surface of the chuck table, and the suction surface of the suction pad is brought into contact with the second surface. Then, by sucking the wafer through the suction pad, it is considered that the wafer can be divided into a first thinned wafer having a first surface and a second thinned wafer having a second surface with the modified surface as a boundary. ..

JP-A-2015-30005

However, in the method of Patent Document 1, when the wafer cannot be divided only by the suction of the suction pad, it is conceivable that the suction pad is raised by the drive device, but the following problems may occur.
The upper surface of the chuck table is generally formed in a porous shape. Therefore, on the first surface of the wafer, there are a portion that is adsorbed by the chuck table (hereinafter, referred to as “adsorption portion”) and a portion that is not adsorbed (hereinafter, referred to as “non-adsorption portion”). become.
When the suction pad rises, the upward force due to the rise of the suction pad and the downward force due to the suction of the chuck table act on the suction part, but the downward force does not act on the non-suction part. .. In addition, there is a limit to the adsorption force in an atmospheric pressure atmosphere. Further, since the wafer is thin and easily deformed, the non-adsorption portion may be bent upward, and the wafer may be damaged without being divided.

An object of the present invention is to provide a method and an apparatus for manufacturing a thin plate-shaped member capable of appropriately manufacturing a thin plate-shaped member.

In the method for manufacturing a thin plate-shaped member of the present invention, the first adhesive surface of the first double-sided adhesive sheet is attached to the support surface of the first hard support, and the first double-sided adhesive is attached to the entire first surface of the plate-shaped member. The step of attaching the second adhesive surface of the sheet, the step of forming a boundary layer parallel to the first surface inside the plate-shaped member, and the opposite side of the plate-shaped member with the first hard support interposed therebetween. The step of detachably fixing the first holding means and the first hard support so that the first holding means is located in the second holding means, and the second holding means for fixing the plate-shaped member to the plate-shaped member. With the step of holding from the surface side and the boundary layer as a boundary, the plate-shaped member is a first thinned plate-shaped member having the first surface and a second thinned plate-shaped member having the second surface. It is characterized in that it includes a step of relatively moving the first holding means and the second holding means so as to be divided into.

In the method for manufacturing a thin plate-shaped member of the present invention, the step of holding the plate-shaped member from the second surface side by the second holding means is a step of holding a second double-sided adhesive sheet on the support surface of the second hard support. The first adhesive surface is attached, the second adhesive surface of the second double-sided adhesive sheet is attached to the entire second surface of the plate-shaped member, and the second rigid support is sandwiched between the plate-shaped member and the opposite side. It is preferable to detachably fix the second holding means and the second hard support so that the second holding means is located.
Further, in the method for manufacturing a thin plate-shaped member of the present invention, the plate-shaped member is preferably a wafer.

In the apparatus for manufacturing a thin plate-shaped member of the present invention, the first hard support to which the first adhesive surface of the first double-sided adhesive sheet is attached to the support surface, and the first surface of the first double-sided adhesive sheet. 2. The plate-shaped member having the boundary layer forming means, the first holding means, and the first hard support sandwiching the boundary layer forming means parallel to the first surface inside the plate-shaped member attached to the adhesive surface. The first fixing means for detachably fixing the first holding means and the first hard support so that the first holding means is located on the opposite side of the member, and the plate-shaped member on the second surface side. The plate-shaped member is divided into a first thinned plate-shaped member having the first surface and a second thinned plate-shaped member having the second surface with the boundary layer as a boundary. It is characterized in that it includes a relative moving means for relatively moving the first holding means and the second holding means so as to be divided into members.

In the apparatus for manufacturing a thin plate-shaped member of the present invention, the plate-shaped member sandwiches between a second hard support to which the first adhesive surface of the second double-sided adhesive sheet is attached to the support surface and the second hard support. The second holding means is provided with a second fixing means for detachably fixing the second holding means and the second hard support so that the second holding means is located on the opposite side of the second holding means. It is preferable that the two adhesive surfaces are formed in a size so that the entire second surface of the plate-shaped member can be attached.

According to the present invention, it is possible to provide a method and an apparatus for manufacturing a thin plate-shaped member capable of appropriately manufacturing a thin plate-shaped member.

The operation explanatory drawing of the thinning wafer manufacturing apparatus which concerns on embodiment of this invention. It is operation explanatory drawing of the thinning wafer manufacturing apparatus which concerns on the said Embodiment, and shows the state which follows FIG. 1A. It is operation explanatory drawing of the thinning wafer manufacturing apparatus which concerns on the said Embodiment, and shows the state which follows FIG. 1B. It is operation explanatory drawing of the thinning wafer manufacturing apparatus which concerns on the said Embodiment, and shows the state which follows FIG. 1C. It is operation explanatory drawing of the thinning wafer manufacturing apparatus which concerns on the said Embodiment, and shows the state which follows FIG. 2A. FIG. 6 is a schematic vertical cross-sectional view of a wafer after forming a plurality of modified portions by modification of the embodiment of the present invention. FIG. 6 is a schematic cross-sectional view of a wafer after forming a plurality of modified portions by the deformation. FIG. 6 is a schematic vertical cross-sectional view of a wafer after forming a plurality of modified portions by other modifications of the embodiment of the present invention. FIG. 6 is a schematic cross-sectional view of a wafer after forming a plurality of modified portions by the other deformation.

[Embodiment]
Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
The X-axis, Y-axis, and Z-axis in the present embodiment are orthogonal to each other, the X-axis and the Y-axis are axes in a predetermined plane, and the Z-axis is an axis orthogonal to the predetermined plane. To do. Further, in the present embodiment, when the direction is indicated, "up" is the direction of the arrow on the Z axis and "down" is the opposite direction, "left" is the direction of the arrow on the X axis and "right" is the opposite direction. "Front" is the direction of the arrow on the Y axis, and "rear" is the opposite direction.

In FIGS. 1A to 1C and FIGS. 2A and 2B, in the thinning wafer manufacturing apparatus 100 as a thinning plate-like member, the first adhesive surface AT11 of the first double-sided adhesive sheet AT1 is attached to the support surface 111. As a boundary layer parallel to the first surface WF1, inside the wafer WF as a plate-like member in which the hard support 110 and the entire first surface WF1 are attached to the second adhesive surface AT12 of the first double-sided adhesive sheet AT1. The lower table so that the boundary layer forming means 120 for forming the crack layer CR, the lower table 130 as the first holding means, and the lower table 130 are located on the opposite side of the wafer WF with the first hard support 110 interposed therebetween. A first fixing means 140 for detachably fixing the 130 and the first hard support 110, and a second hard support 150 to which the first adhesive surface AT21 of the second double-sided adhesive sheet AT2 is attached to the support surface 151. The upper table 160 as a second holding means for holding the wafer WF from the second surface WF2 side opposite to the first surface WF1 and the upper table 160 are located on the opposite side of the wafer WF with the second hard support 150 interposed therebetween. The wafer WF is thinned to have a first surface WF1 with a second fixing means 170 for detachably fixing the upper table 160 and the second hard support 150 and a crack layer CR as a boundary. The lower table 130 and the upper table 160 are relative to each other so as to be divided into a first thinning wafer WT1 as a plate-shaped member and a second thinning wafer WT2 as a second thinning plate-shaped member having a second surface WF2. It is provided with a relative moving means 180 for moving.

The wafer WF is not particularly limited as long as it is a wafer made of a material modified by laser irradiation. The laser is preferably a laser that irradiates in the stealth dicing method. The material of the wafer WF is preferably selected from the group consisting of, for example, silicon, silicon nitride, gallium nitride, gallium arsenide, SiC (silicon carbide), sapphire, and glass. The material of the wafer WF is more preferably silicon, and even more preferably single crystal silicon. It is also preferable that the wafer WF is made of a material having a crystal orientation.

According to the wafer manufacturing method according to the present embodiment, it is possible to further reduce the thickness of a plate-shaped member (wafer) having a small thickness, instead of a processing object having a large thickness such as an ingot. The thickness of the wafer WF is preferably 3 mm or less. At least one of the thicknesses of the first thinning wafer WT1 and the second thinning wafer WT2 formed by dividing the wafer WF is preferably 10 μm or more, and more preferably 30 μm or more.

The first hard support 110 and the second hard support 150 are preferably plate-shaped, and the material and shape thereof may be appropriately determined in consideration of mechanical strength. Examples of the material include metal materials such as SUS; non-metallic inorganic materials such as glass and silicon wafers; resin materials such as polyimide and polyamide-imide; and composite materials such as glass epoxy resin. Among these, SUS, Glass, silicon wafer and the like are preferable.
The thickness of the first hard support 110 and the second hard support 150 may be appropriately determined in consideration of mechanical strength, handleability, etc., and is preferably 100 μm or more and 50 mm or less, for example.
As will be described later, the first rigid support 110 may be bent as long as it does not deform when a force is applied to the wafer WF in the direction away from the first double-sided adhesive sheet AT1 by the rotation of the upper table 160. The strength is preferably 50 MPa or more.
Further, as described later, the hardness of the second hard support 150 is such that it does not deform when a force is applied to the second double-sided adhesive sheet AT2 in the direction away from the wafer WF by the rotation of the upper table 160. Often, for example, the bending strength is preferably 50 MPa or more.
The boundary layer forming means 120 includes a laser irradiator 121.
The first fixing means 140 includes a lower decompression means 141 composed of a decompression pump, a vacuum ejector, or the like, and holds the lower table 130 by depressurizing the internal space of the lower table 130 connected via the pipe 142. The surface 131 is configured to be able to attract and hold the first rigid support 110.
The second fixing means 170 includes an upper decompression means 171 configured in the same manner as the lower decompression means 141, and holds the upper table 160 by depressurizing the internal space of the upper table 160 connected via the pipe 172. The surface 161 is configured to be able to attract and hold the second rigid support 150.
The relative moving means 180 includes a rotating motor 181 as a driving device arranged on the side of the lower table 130. The output shaft 182 of the rotary motor 181 is connected to an extension portion 162 extending downward from the end portion of the upper table 160.

The procedure for manufacturing the first thinning wafer WT1 and the second thinning wafer WT2 from the wafer WF in the above thinning wafer manufacturing apparatus 100 will be described.
First, as shown in FIG. 1A, a first rigid support 110 having the first adhesive surface AT11 of the first double-sided adhesive sheet AT1 attached to the support surface 111 is prepared, and the wafer WF shown by the alternate long and short dash line in the figure is prepared. The entire first surface WF1 is attached to the second adhesive surface AT12 as shown by the solid line. At this time, the first surface WF1 is attached to the second adhesive surface AT12 so that bubbles are not formed. The entire region of the first adhesive surface AT11 corresponding to the first surface WF1 is also preferably attached to the first hard support 110 so that air bubbles are not formed. Further, the method and order in which the first double-sided adhesive sheet AT1 is attached to the first hard support 110 and the first surface WF1 are not particularly limited. For example, after the first double-sided adhesive sheet AT1 is attached to the wafer WF, the first is attached. 1 It may be attached to the rigid support 110.

Next, as shown in FIG. 1B, a transport means (not shown) such as an operator or an articulated robot or a belt conveyor moves the wafer WF and the first rigid support 110 below the boundary layer forming means 120 to form a boundary. The layer forming means 120 drives the laser irradiator 121, and a relative moving mechanism (not shown) moves the laser irradiator 121 and the first hard support 110 in a relatively horizontal direction. Since the laser beam LB of the laser irradiator 121 is focused on the inside of the wafer WF, the relative movement of the laser irradiator 121 and the first hard support 110 causes, as shown in FIG. 1C, to move. A crack layer CR along the XY plane is formed in the entire inside of the wafer WF. When the crack layer CR is formed on the entire inside of the wafer WF, the boundary layer forming means 120 stops driving the laser irradiator 121.

After that, as shown in FIG. 2A, the lower table 130 is located on the opposite side of the wafer WF with the first hard support 110 interposed therebetween, and the first adhesive surface of the second double-sided adhesive sheet AT2 is placed on the second hard support 150. AT21 is attached, the second adhesive surface AT22 of the second double-sided adhesive sheet AT2 is attached to the entire second surface WF2 of the wafer WF, and the upper table 160 is located on the opposite side of the wafer WF with the second rigid support 150 sandwiched between them. To be in a state to do. At this time, the second surface WF2 is attached to the second adhesive surface AT22 so that bubbles are not formed. It is preferable that the entire region of the first adhesive surface AT21 corresponding to the second surface WF2 is also attached to the second hard support 150 so that air bubbles are not formed.
Then, the first fixing means 140 and the second fixing means 170 drive the lower decompression means 141 and the upper decompression means 171, respectively, and the first hard support 110 is placed on the holding surface 131 of the lower table 130 by the second hard. The support 150 is sucked and held by the holding surface 161 of the upper table 160, respectively. The first hard support 110 can be positioned on the lower table 130, the second double-sided adhesive sheet AT2 can be attached to the second hard support 150 and the second surface WF2, or the second hard support 150 can be placed on the upper table. The method and order of locating the table 160 below the table 160 are not particularly limited. For example, the second double-sided adhesive sheet AT2 may be attached to the second rigid support 150 and then attached to the second surface WF2. The pasting order may be reversed.

After that, as shown in FIG. 2B, the relative moving means 180 drives the rotation motor 181 to rotate the upper table 160 in the clockwise rotation direction, and the wafer WF is divided at the crack layer CR as a boundary to reduce the thickness. The first thinning wafer WT1 and the second thinning wafer WT2 are formed.

At this time, since the second adhesive surface AT12 of the first double-sided adhesive sheet AT1 is attached to the entire first surface WF1 of the wafer WF and the first adhesive surface AT11 is adhered to the first hard support 110, the upper table 160 When a force is applied to the wafer WF in the direction away from the first double-sided adhesive sheet AT1 due to the rotation of the wafer WF, the upper table 160 rotates while the deflection of the entire wafer WF is suppressed by the first rigid support 110. Therefore, the wafer WF can be divided without being damaged, and the first thinning wafer WT1 can be appropriately manufactured.
Further, since the second adhesive surface AT22 of the second double-sided adhesive sheet AT2 is attached to the entire second surface WF2 of the wafer WF and the first adhesive surface AT21 is adhered to the second hard support 150, the upper table 160 When a force acts on the second double-sided adhesive sheet AT2 in the direction away from the wafer WF due to the rotation, the upper table 160 rotates while the bending of the entire wafer WF is suppressed by the second rigid support 150. Therefore, the wafer WF can be divided without being damaged, and the second thinned wafer WT2 can be appropriately manufactured.
Further, since the first hard support 110 and the second hard support 150 support the first thinning wafer WT1 and the second thinning wafer WT2, the first hard support 110 and the second hard support By holding the body 150, the first thinning wafer WT1 and the second thinning wafer WT2 can be easily transported.

Next, when an operator or a conveying means (not shown) holds the first thinning wafer WT1 and the second thinning wafer WT2, the first fixing means 140 and the second fixing means 170 respectively hold the lower decompression means 141 and the lower decompression means 141, respectively. The drive of the upper decompression means 171 is stopped, and the suction holding of the first thinning wafer WT1 and the first hard support 110 and the second hard support 150 supporting the second thinning wafer WT2 is released.
In the present embodiment, as the first fixing means 140 and the second fixing means 170, a configuration in which the first hard support 110 and the second hard support 150 are fixed by suction holding is applied. Unlike the case of fixing with an agent, it is not necessary to remove the adhesive component adhering to each of the holding surface 131 of the lower table 130 and the holding surface 161 of the upper table 160 after the adsorption holding is released, and the deterioration of workability can be suppressed. ..
After that, when the conveying means (not shown) conveys the first thinning wafer WT1 and the second thinning wafer WT2 to the next step, each means drives each driving device and returns each member to the initial position. The same operation is repeated.

According to the above-described embodiment, the first thinning wafer WT1 and the second thinning wafer WT2 can be appropriately manufactured.

[Modification of Embodiment]
As described above, the best configuration, method, etc. for carrying out the present invention are disclosed in the above description, but the present invention is not limited thereto. That is, the present invention is particularly illustrated and described primarily with respect to specific embodiments, but without departing from the scope of the technical ideas and objectives of the present invention, with respect to the embodiments described above. Those skilled in the art can make various modifications in terms of material, quantity, and other detailed configurations. Further, the description limiting the shape, material, etc. disclosed above is exemplarily described for facilitating the understanding of the present invention, and does not limit the present invention. Therefore, those shapes, materials, etc. The description by the name of the member excluding some or all of the restrictions such as the above is included in the present invention.

For example, if the first hard support 110 is applied, the wafer WF is adsorbed directly on the holding surface 161 of the upper table 160 or via the second double-sided adhesive sheet AT2 without applying the second hard support 150. It may be retained.
If the second hard support 150 is applied, the wafer WF is sucked and held by the holding surface 131 of the lower table 130 directly or via the first double-sided adhesive sheet AT1 without applying the first hard support 110. In this case, the second hard support 150 and the second double-sided adhesive sheet AT2 correspond to the first hard support and the first double-sided adhesive sheet of the present invention, respectively.

The boundary layer forming means 120 may irradiate the wafer WF before being divided with the laser beam LB. For example, the wafer WF before the first double-sided adhesive sheet AT1 is attached is irradiated with the laser beam LB. May be good.
The boundary layer forming means 120 may irradiate the wafer WF to which the first double-sided adhesive sheet AT1 is attached with the laser beam LB from the first double-sided adhesive sheet AT1 side, or the second double-sided adhesive sheet AT2 is attached. The wafer WF may be irradiated with the laser beam LB from the first double-sided adhesive sheet AT1 side or the second double-sided adhesive sheet AT2 side, or the laser beam LB may be irradiated from the outer peripheral surface side of the wafer WF. , The laser beam LB may be irradiated from two or all directions of the first thinning wafer WT1 side, the second thinning wafer WT2 side, and the outer peripheral surface side.
When at least one of the first hard support 110 and the second hard support 150 is made of a material that transmits the laser beam LB, the boundary layer forming means 120 is formed of the material that transmits the laser beam LB. The laser beam LB may be irradiated from the support side.
The boundary layer forming means 120 may irradiate the wafer WF attracted and held by the lower table 130 or the upper table 160 with the laser beam LB.
The boundary layer forming means 120 may employ a laser irradiator capable of irradiating a laser beam having a linear focus (linear laser beam) or a laser beam having a planar focus (plane laser beam), or a plurality of laser irradiators. Laser irradiator may be adopted.
The boundary layer forming means 120 can arbitrarily determine the position of the focal point, and the thickness ratio of the first thinning wafer WT1 and the second thinning wafer WT2 to be formed may be 50:50 or 1 It may be 99 to 99 or 1000 to 1, and the focus can be determined according to the desired thickness of the thinned wafer.
The boundary layer forming means 120 may apply energy rays such as X-rays and ultraviolet rays, vibration, pulsation, and the like to form a crack layer CR in the intermediate portion in the thickness direction of the wafer WF.
The boundary layer forming means 120 may form a modified layer, voids, or the like in addition to the crack layer. The crack layer is a layer in which the wafer WF is chemically or physically cracked or cracked, and the modified layer is a layer in which the properties and strength of the wafer WF are chemically or physically changed. The layer is weakened or softened, and the void includes a space having nothing or a state in which both are in contact with each other with substantially nothing but sandwiching the void.
The boundary layer forming means 120 may partially form a boundary portion along the XY plane inside the wafer WF.

The boundary layer forming means 120 may form a boundary layer composed of a plurality of modified portions RP as shown in FIGS. 3 and 4 instead of the crack layer CR. In addition, in FIG. 3, FIG. 4, and FIGS. 5 and 6 described later, the hatch is omitted from the viewpoint of visibility of the drawings.
The boundary layer forming means 120 is not particularly limited as long as it is a means for irradiating the laser beam LB capable of modifying the semiconductor wafer. As the boundary layer forming means 120, for example, an apparatus adopted in the stealth dicing method can be used.

In the laser irradiation step of forming the boundary layer, the laser beam LB may be irradiated from the second surface WF2 side of the wafer WF. By irradiating the laser beam LB, a plurality of modified portion RPs are formed along the dividing surface DP inside the wafer WF. That is, the planar region inside the wafer in which the plurality of modified RPs are present corresponds to the divided surface DP. The wafer WF is divided starting from the reforming portion RP.
When the wafer WF is made of a material having a crystal orientation, it is preferable that the split plane DP and the crystal orientation match. If the split plane DP and the crystal orientation match, the surfaces of the first thinned wafer WT1 and the second thinned wafer WT2 (the plane corresponding to the split plane DP) appearing due to the splitting of the wafer WF become smoother. can do.
In the laser irradiator 121, the laser irradiation conditions are set so that the modified portion RP can be formed inside the wafer WF. Examples of the laser irradiation conditions include, but are not limited to, laser output, laser frequency, laser irradiation position, and laser wavelength.

In the present specification, the modified portion is a portion that is weakened or softened by changing the properties and strength of the wafer WF. In the present specification, the modified portion includes a laser irradiation point irradiated with a laser inside the wafer, a peripheral portion formed around the laser irradiation point as a central portion, and a peripheral portion formed around the central portion. To say. The modification intensity inside the wafer is maximum at the laser irradiation point. The modification intensity of the peripheral portion decreases as the distance from the laser irradiation point increases.

Although the modified portion RP having a circular cross section is shown in FIGS. 3 and 4, the shape and size of the modified portion in the present specification are as shown in FIGS. 3 and 4. Not limited to.
It is also preferable that the modified portion RP is formed over the entire divided surface DP. The number of modified parts RP to be formed is not particularly limited. For example, the number of reformed portion RPs to be formed may be set so as to be easily divided into the first thinned wafer WT1 and the second thinned wafer WT2 according to the material of the wafer WF and the modification strength by the laser. it can. Further, the number of modified parts RP to be formed can be set in consideration of the productivity of the semiconductor wafer.

Further, for example, as shown in FIGS. 3 and 4, a plurality of modified unit RPs may overlap each other.
At this time, it is preferable to irradiate the laser beam LB along the dividing surface DP at intervals of 1 μm or more and 350 μm or less. That is, it is preferable to irradiate the laser beam LB so that the distance D between the points irradiated with the laser beam LB (laser irradiation point) is 1 μm or more and 350 μm or less. If the distance D between the laser irradiation points is 1 μm or more, the productivity is improved. When the distance between the laser irradiation points is 350 μm or less, it is possible to suppress the problem that cracks are likely to occur in the thickness direction of the wafer WF. The distance D between the laser irradiation points may be the same or different in all the reformed portion RPs as long as it is within the range of 1 μm or more and 350 μm or less.

Further, as shown in FIGS. 5 and 6, the plurality of modified unit RPs may be separated from each other.
At this time, it is preferable to irradiate the laser beam LB along the dividing surface DP at intervals of 1 μm or more and 350 μm or less. That is, it is preferable to irradiate the laser beam LB so that the distance D1 between the points irradiated with the laser beam LB (laser irradiation point) is 1 μm or more and 350 μm or less. If the distance D1 between the laser irradiation points is 1 μm or more, the productivity is improved. When the distance between the laser irradiation points is 350 μm or less, it is possible to suppress the problem that cracks are likely to occur in the thickness direction of the wafer WF. The distance D1 between the laser irradiation points may be the same or different in all the reforming unit RPs as long as it is within the range of 1 μm or more and 350 μm or less.
The distance between adjacent modified portions RP (distance between the end of one modified portion and the end of the other modified portion) is not particularly limited as long as it can be divided in the plane direction of the wafer WF.

In the configurations of FIGS. 3, 4, 5 and 6, the distance between the laser irradiation points changes, for example, the moving speed of at least one of a table (not shown) holding the first hard support 110 and the laser irradiator 32. By making it, it can be adjusted to a predetermined distance.
Then, in the configurations of FIGS. 3, 4, 5, and 6, the first thinned wafer WT1 and the first thinned wafer WT1 are divided by dividing the wafer WF with the divided surface DP on which the plurality of modified portions RP are formed as a boundary. The second thinning wafer WT2 is formed.
As shown in FIGS. 3 and 4, if a plurality of modified portion RPs are formed so as to overlap each other, more modified portion RPs are present along the dividing surface DP, and the wafer WF can be easily divided. ..
As shown in FIGS. 5 and 6, if the plurality of modified portion RPs are formed so as not to overlap each other, the number of laser irradiation points can be reduced and the productivity of the thin plate-shaped member is improved.

The shape and size of the modified portion are not limited to the shapes shown in FIGS. 3, 4, 5, and 6. Examples of the shape of the modified portion include a spherical shape, an elliptical spherical shape, a columnar shape, a prismatic shape, a conical shape, and a pyramidal shape. The size of the modified portion is not particularly limited as long as the plate-shaped member can be divided into a plurality of thinned plate-shaped members. The modified portion is preferably sized in consideration of the thickness of the plate-shaped member before division. This is because if the modified portion is too large in the thickness direction of the plate-shaped member, cracks may occur in the thickness direction. Therefore, the modified portion may be formed so that it can be divided in the plane direction along the dividing surface.

Further, the embodiment in which the plate-shaped member is divided into two thinned plate-shaped members has been described as an example, but as another embodiment, the embodiment in which the plate-shaped member is divided into three or more thinned plate-shaped members is described. Can be mentioned. For example, in the case of dividing into three thinned plate-shaped members, when setting the dividing surface inside the plate-shaped member, two dividing surfaces (first dividing surface and second dividing surface) are set, and the first A plurality of modified portion RPs may be formed along the one partition plane, and a plurality of modified portion RPs may be formed along the second divided surface. Further, as another embodiment, there is also an embodiment in which laser irradiation and division are performed using a thin plate-shaped member to form a further thin plate-shaped member.

The first fixing means 140 has a configuration in which the first hard support 110 is fixed to the lower table 130 by a chuck means such as a mechanical chuck or a chuck cylinder, a Coulomb force, an adhesive, an adhesive, a magnetic force, Bernoulli adsorption, a drive device, or the like. Alternatively, the second fixing means 170 may be configured in the same manner.
When the wafer WF is divided, the relative moving means 180 may relatively move the lower table 130 and the upper table 160 in the vertical direction to separate the wafer WF in the thickness direction of the wafer WF, or the lower table 130. Even if it is linearly relatively moved in the plane direction parallel to the holding surface 131 and the holding surface 161 of the upper table 160, or is relatively rotated in the circumferential direction in the plane parallel to the holding surface 131 and the holding surface 161. Often, at least one of the lower table 130 and the upper table 160 may be moved or rotated.

The wafer WF may have a circuit surface, and the circuit surface may be on the first surface WF1 side, on the second surface WF2 side, on both surface sides, or in a later step. When the circuit surface is formed by, the divided surface (the surface on which the crack layer CR is formed) divided into the first thinning wafer WT1 and the second thinning wafer WT2 may be used.

In addition, the following points can also be applied to the above-described embodiment and modifications of the embodiment.
The materials, types, shapes, etc. of the first double-sided adhesive sheet AT1, the second double-sided adhesive sheet AT2, and the plate-shaped member are not particularly limited. For example, the first double-sided adhesive sheet AT1 and the second double-sided adhesive sheet AT2 may have a circular shape, an elliptical shape, a polygonal shape such as a triangle or a square shape, and other shapes, and may have pressure-sensitive adhesiveness and heat-sensitive adhesion. It may be of an adhesive form such as sex, and when the heat-sensitive adhesive first double-sided adhesive sheet AT1 and the second double-sided adhesive sheet AT2 are adopted, the first double-sided adhesive sheet AT1 and the second double-sided adhesive sheet are adopted. Adhesion may be performed by an appropriate method such as providing an appropriate coil heater for heating the adhesive sheet AT2 or a heating means such as a heating side of a heat pipe. Further, such a first double-sided adhesive sheet AT1 and a second double-sided adhesive sheet AT2 have a single-layer or multi-layer intermediate layer having only an adhesive layer, or a single-layer or multi-layer without an intermediate layer. It may be. Examples of plate-shaped members include foods, resin containers, semiconductor wafers (silicon semiconductor wafers and compound semiconductor wafers, etc.), circuit boards, information recording substrates (optical disks, etc.), glass plates, steel plates, pottery, wooden boards, and resins. Boards and the like, as well as members and articles of any form can be targeted. The first double-sided adhesive sheet AT1 and the second double-sided adhesive sheet AT2 can be read in a functional and versatile manner, for example, an information description label, a decorative label, a protective sheet, a dicing tape, a die attach film, and a die bonding. Any sheet, film, tape, etc. of any shape such as tape and recording layer forming resin sheet can be attached to any plate-shaped member as described above.

The means and processes in the present invention are not limited as long as they can perform the operations, functions or processes described for the means and processes, much less the components of the mere embodiment shown in the above embodiments. It is not limited to the process at all. For example, if the first rigid support can be attached to the support surface by the first adhesive surface of the first double-sided adhesive sheet, it can be compared with the common general technical knowledge at the time of filing, and if it is within the technical range. It is not limited (the description of other means and processes is omitted).
Further, the drive device in the above embodiment includes electric devices such as rotary motors, linear motors, linear motors, single-axis robots and articulated robots, actuators such as air cylinders, hydraulic cylinders, rodless cylinders and rotary cylinders. In addition to being able to be adopted, it is also possible to adopt a combination thereof directly or indirectly (some of which overlap with those illustrated in the embodiment).

100 Manufacturing equipment 110 First hard support 111 Support surface 120 Boundary layer forming means 130 Lower table (first holding means)
140 1st fixing means 150 2nd hard support 160 Upper table (2nd holding means)
170 Second fixing means 180 Relative moving means AT1 First double-sided adhesive sheet AT11 First adhesive surface AT12 Second adhesive surface AT2 Second double-sided adhesive sheet AT21 First adhesive surface AT22 Second adhesive surface CR Crack layer (boundary layer)
WF wafer (plate-shaped member)
WF1 1st surface WF2 2nd surface WT1 1st thinning wafer WT2 2nd thinning wafer

Claims (5)

A step of attaching the first adhesive surface of the first double-sided adhesive sheet to the support surface of the first hard support, and attaching the second adhesive surface of the first double-sided adhesive sheet to the entire first surface of the plate-shaped member.
A step of forming a boundary layer parallel to the first surface inside the plate-shaped member, and
A step of detachably fixing the first holding means and the first hard support so that the first holding means is located on the opposite side of the plate-shaped member across the first hard support.
A step of holding the plate-shaped member from the second surface side of the plate-shaped member by the second holding means,
With the boundary layer as a boundary, the plate-shaped member is divided into a first thinned plate-shaped member having the first surface and a second thinned plate-shaped member having the second surface. (1) A method for manufacturing a thin plate-shaped member, which comprises a step of relatively moving the holding means and the second holding means. In the method for manufacturing a thin plate-shaped member according to claim 1,
The step of holding the plate-shaped member from the second surface side by the second holding means is
The first adhesive surface of the second double-sided adhesive sheet is attached to the support surface of the second hard support, and the second adhesive surface of the second double-sided adhesive sheet is attached to the entire second surface of the plate-shaped member. The thin type is characterized in that the second holding means and the second hard support are detachably fixed so that the second holding means is located on the opposite side of the plate-shaped member with the hard support sandwiched between them. A method for manufacturing a plate-shaped member. In the method for manufacturing a thin plate-shaped member according to claim 1 or 2.
A method for manufacturing a thin plate-shaped member, wherein the plate-shaped member is a wafer. A first hard support to which the first adhesive surface of the first double-sided adhesive sheet is attached to the support surface, and
A boundary layer forming means for forming a boundary layer parallel to the first surface inside a plate-shaped member whose entire first surface is attached to the second adhesive surface of the first double-sided adhesive sheet.
The first holding means and
The first fixing that detachably fixes the first holding means and the first hard support so that the first holding means is located on the opposite side of the plate-shaped member with the first hard support sandwiched between them. Means and
A second holding means for holding the plate-shaped member from the second surface side,
With the boundary layer as a boundary, the plate-shaped member is divided into a first thinned plate-shaped member having the first surface and a second thinned plate-shaped member having the second surface. 1 An apparatus for manufacturing a thin plate-shaped member, which comprises a relative moving means for relatively moving the holding means and the second holding means. In the apparatus for manufacturing a thin plate-shaped member according to claim 4.
A second hard support to which the first adhesive surface of the second double-sided adhesive sheet is attached to the support surface, and
A second fixing that detachably fixes the second holding means and the second hard support so that the second holding means is located on the opposite side of the plate-shaped member across the second hard support. With means,
An apparatus for manufacturing a thin plate-shaped member, wherein the second adhesive surface of the second double-sided adhesive sheet is formed in a size such that the entire second surface of the plate-shaped member can be attached.

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