CN111052316A - Method and apparatus for manufacturing thin plate-like member - Google Patents
Method and apparatus for manufacturing thin plate-like member Download PDFInfo
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- CN111052316A CN111052316A CN201880057314.1A CN201880057314A CN111052316A CN 111052316 A CN111052316 A CN 111052316A CN 201880057314 A CN201880057314 A CN 201880057314A CN 111052316 A CN111052316 A CN 111052316A
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- plate
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- adhesive sheet
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
Abstract
A method for manufacturing a thinned plate-like member includes: a step of sticking a first adhesive surface (AT11) of a first double-sided adhesive sheet (AT1) to a support surface (111) of a first hard support body (110), and sticking a second adhesive surface (AT12) to the entire first surface (WF1) of a plate-like member (WF); forming a boundary layer (CR) inside the plate-like member (WF); a step of detachably fixing the first holding unit (130) and the first hard support (110) such that the first holding unit (130) is positioned on the opposite side of the plate-like member (WF) with the first hard support (110) therebetween; holding the plate-like member (WF) from the second surface (WF2) side by a second holding means (160); and a step of relatively moving the first holding means (130) and the second holding means (160) to divide the plate-like member (WF) into a first thin plate-like member having a first surface (WF1) and a second thin plate-like member having a second surface (WF2) at the boundary of the boundary layer (CR).
Description
Technical Field
The present invention relates to a method and an apparatus for manufacturing a thin plate-like member.
Background
Conventionally, a method of machining a workpiece is known (for example, see patent document 1).
The method of patent document 1 irradiates a workpiece held by a holding means with laser light to form a modified surface in the workpiece. Then, a part of the workpiece is peeled off with the modified surface as a boundary.
Patent document 1 also discloses that a wafer as a workpiece can be processed to be thin from a general thickness. In this case, the first surface of the wafer is directly sucked and held by the upper surface of the chuck table, and the suction surface of the chuck is brought into contact with the second surface of the wafer. Then, it is conceivable that the wafer is divided into a first thinned wafer having a first surface and a second thinned wafer having a second surface with the modified surface as a boundary by sucking the wafer by the chuck.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2015-30005
Disclosure of Invention
Technical problem to be solved by the invention
However, in the method of patent document 1, when the wafer cannot be divided only by suction of the chuck, it is considered that the chuck is raised by the driving device, but the following problems may occur.
The upper surface of the chuck table is generally formed to be porous. Therefore, on the first surface of the wafer, there are a portion (hereinafter referred to as "suction portion") sucked by the chuck table and a portion (hereinafter referred to as "non-suction portion") not sucked.
When the suction pad is lifted, a force in the upper direction accompanying the lifting of the suction pad and a force in the lower direction due to the suction by the chuck table act on the suction portion, but a force in the lower direction does not act on the non-suction portion. In addition, in an atmospheric pressure environment, there is a limit to the adsorption force. Further, since the wafer is thin and easily deformed, the non-suction portion may be bent in the upper direction, and the wafer may be broken without being divided.
The invention aims to provide a manufacturing method and a manufacturing device of a thin plate-shaped component, which can appropriately manufacture the thin plate-shaped component.
Means for solving the problems
The method for manufacturing a thinned plate-like member according to the present invention includes: a step of attaching a first adhesive surface of a first double-sided adhesive sheet to a support surface of a first hard support and attaching a second adhesive surface of the first double-sided adhesive sheet to the entire first surface of a plate-like member; forming a boundary layer parallel to the first surface in the plate-like member; a step of detachably fixing a first holding unit and a first hard support body such that the first holding unit is positioned on the opposite side of the plate-like member with the first hard support body interposed therebetween; holding the plate-like member from the second surface side thereof by a second holding means; and a step of relatively moving the first holding means and the second holding means to divide the plate-like member into a first thin plate-like member having the first surface and a second thin plate-like member having the second surface, with the boundary layer therebetween.
In the method for manufacturing a thinned plate-like member according to the present invention, it is preferable that the step of holding the plate-like member from the second surface side by the second holding means includes: the first adhesive surface of a second double-sided adhesive sheet is adhered to a support surface of a second hard support, the second adhesive surface of the second double-sided adhesive sheet is adhered to the entire second surface of the plate-like member, and a second holding means and the second hard support are detachably fixed so that the second holding means is positioned on the opposite side of the plate-like member with the second hard support interposed therebetween.
In the method for manufacturing a thinned plate-like member according to the present invention, the plate-like member is preferably a wafer.
The present invention provides an apparatus for manufacturing a thin plate-like member, comprising: a first hard support body having a first adhesive surface of a first double-sided adhesive sheet adhered to a support surface; boundary layer forming means for forming a boundary layer parallel to the first surface inside a plate-like member having the first surface entirely bonded to the second bonding surface of the first double-sided adhesive sheet; a first holding unit; a first fixing unit that detachably fixes the first holding unit and the first hard support body such that the first holding unit is positioned on the opposite side of the plate-like member with the first hard support body interposed therebetween; a second holding unit that holds the plate-like member from a second surface side; and a relative movement hand unit that relatively moves the first holding unit and the second holding unit to divide the plate-like member into a first thin plate-like member having the first surface and a second thin plate-like member having the second surface, with the boundary layer as a boundary.
In the manufacturing apparatus for a thin plate-like member according to the present invention, it is preferable that the manufacturing apparatus comprises: a second hard support body having the first adhesive surface of the second double-sided adhesive sheet adhered to the support surface; a second fixing unit that detachably fixes the second holding unit and the second hard support body such that the second holding unit is positioned on the opposite side of the plate-shaped member with the second hard support body interposed therebetween; the second adhesive surface of the second double-sided adhesive sheet is formed to have a size capable of adhering the entire second surface of the plate-like member.
According to the present invention, it is possible to provide a method and an apparatus for manufacturing a thin plate-like member, which can appropriately manufacture the thin plate-like member.
Drawings
Fig. 1A is an explanatory view of the operation of the thin wafer manufacturing apparatus according to the embodiment of the present invention.
Fig. 1B is an explanatory view of the operation of the thin wafer manufacturing apparatus according to the embodiment, showing a state following fig. 1A.
Fig. 1C is an explanatory view of the operation of the thin wafer manufacturing apparatus according to the embodiment, showing a state following fig. 1B.
Fig. 2A is an explanatory view of the operation of the thin wafer manufacturing apparatus according to the embodiment, showing a state following fig. 1C.
Fig. 2B is an explanatory view of the operation of the thin wafer manufacturing apparatus according to the embodiment, showing a state following fig. 2A.
Fig. 3 is a schematic vertical cross-sectional view of a wafer on which a plurality of modified portions are formed by modification of the embodiment of the present invention.
Fig. 4 is a schematic cross-sectional view of a wafer on which a plurality of modified portions are formed by the deformation.
Fig. 5 is a schematic vertical cross-sectional view of a wafer on which a plurality of modified portions are formed according to another modification of the embodiment of the present invention.
Fig. 6 is a schematic cross-sectional view of a wafer on which a plurality of modified portions are formed by the above-described another modification.
Detailed Description
[ embodiment ]
Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
Note that in the present embodiment, the X axis, the Y axis, and the Z axis are orthogonal to each other, and the X axis and the Y axis are axes in a predetermined plane, and the Z axis is an axis orthogonal to the predetermined plane. In the present embodiment, when the direction is indicated, "up" is the arrow direction of the Z axis, "down" is the arrow direction whose opposite direction "left" is the X axis, "right" is the opposite direction, "front" is the arrow direction of the Y axis, and "rear" is the opposite direction.
In fig. 1A to 1C and fig. 2A and 2B, the apparatus 100 for manufacturing a thinned wafer as a thinned plate-like member includes: a first hard support body 110 having a first adhesive surface AT11 of a first double-sided adhesive sheet AT1 adhered to a support surface 111; a boundary layer forming unit 120 that forms a fracture layer CR as a boundary layer parallel to the first front surface WF1 inside the wafer WF as a plate-like member having the first front surface WF1 entirely stuck to the second adhesive surface AT12 of the first double-sided adhesive sheet AT 1; a lower table 130 as a first holding unit; a first fixing unit 140 that detachably fixes the lower table 130 and the first hard support body 110 such that the lower table 130 is positioned on the opposite side of the wafer WF with the first hard support body 110 interposed therebetween; a second hard support body 150 having a first adhesive surface AT21 of a second double-sided adhesive sheet AT2 adhered to a support surface 151; an upper table 160 as a second holding unit for holding the wafer WF from the second front surface WF2 side opposite to the first front surface WF 1; a second fixing unit 170 that detachably fixes the upper table 160 and the second hard support 150 such that the upper table 160 is positioned on the opposite side of the wafer WF with the second hard support 150 interposed therebetween; and a relative movement hand unit 180 for relatively moving the lower table 130 and the upper table 160 to divide the wafer WF into a first thinned wafer WT1 as a first thinned plate-like member having a first surface WF1 and a second thinned wafer WT2 as a second thinned plate-like member having a second surface WF2, with the fracture layer CR as a boundary.
The wafer WF is not particularly limited as long as it is a wafer made of a material that can be modified by laser irradiation. The laser is preferably a laser irradiated in the stealth dicing method. The material of the wafer WF is preferably selected from the group consisting of silicon, silicon nitride, gallium arsenide, SiC (silicon carbide), sapphire, and glass. The material of the wafer WF is more preferably silicon, and even more preferably monocrystalline silicon. The wafer WF is preferably formed of a material having a crystal orientation.
According to the method for manufacturing a wafer of the present embodiment, a plate-like member (wafer) having a small thickness can be made thinner, and is not a processing object having a large thickness such as a steel ingot. The thickness of the wafer WF is preferably 3mm or less. At least one of the thicknesses of the first thinned wafer WT1 and the second thinned wafer WT2 formed by dividing the wafer WF is preferably 10 μm or more, and more preferably 30 μm or more.
The first hard support 110 and the second hard support 150 are preferably plate-shaped, and the material and shape thereof may be appropriately determined in consideration of the mechanical strength. Examples of the material include: metal materials such as SUS; non-metallic inorganic materials such as glass and silicon wafers; resin materials such as polyimide and polyamideimide; and composite materials such as glass epoxy resins, and particularly preferably SUS, glass, silicon wafers, and the like.
The thickness of the first hard support 110 and the second hard support 150 may be determined as appropriate in consideration of mechanical strength, handling property, and the like, and is preferably 100 μm or more and 50mm or less, for example.
As described later, the first hard support 110 is not deformed when a force in a direction away from the first double-sided adhesive sheet AT1 acts on the wafer WF due to the rotation of the upper table 160, and has a bending strength of preferably 50MPa or more, for example.
As described later, the hardness of the second hard support 150 is not required to be deformed when a force in a direction away from the wafer WF is applied to the second double-sided adhesive sheet AT2 by the rotation of the upper table 160, and is preferably 50MPa or more, for example.
The boundary layer forming unit 120 includes a laser irradiator 121.
The first fixing unit 140 includes a lower decompression unit 141 configured by a decompression pump, a vacuum generator, or the like, and is configured to be capable of suction-holding the first hard support body 110 by the holding surface 131 of the lower table 130 by decompressing the internal space of the lower table 130 connected via the pipe 142.
The second fixing unit 170 includes an upper decompression unit 171 having the same configuration as the lower decompression unit 141, and is configured to be capable of suction-holding the second hard support 150 by the holding surface 161 of the upper table 160 by decompressing the internal space of the upper table 160 connected via the pipe 172.
The relative movement hand unit 180 includes a rotation motor 181 as a driving device disposed on a side of the lower table 130. An output shaft 182 of the rotation motor 181 is connected to an extension portion 162 extending downward from an end portion of the upper table 160.
The above-described manufacturing apparatus 100 for thinned wafers will be described with reference to the steps of manufacturing the first thinned wafer WT1 and the second thinned wafer WT2 from the wafer WF.
First, as shown in fig. 1A, a first hard support body 110 is prepared in which the first adhesive surface AT11 of the first double-sided adhesive sheet AT1 is bonded to the support surface 111, and the entire first surface WF1 of the wafer WF shown by the two-dot chain line in the drawing is bonded to the second adhesive surface AT12 as shown by the solid line. AT this time, the first surface WF1 is stuck to the second adhesion surface AT12 so as not to form bubbles. Note that the entire region of the first adhesive surface AT11 corresponding to the first surface WF1 is preferably attached to the first hard support body 110 so as not to form air bubbles. The method and procedure for attaching the first double-sided adhesive sheet AT1 to the first hard support 110 and the first surface WF1 are not particularly limited, and for example, the first double-sided adhesive sheet AT1 may be attached to the wafer WF and then attached to the first hard support 110.
Next, as shown in fig. 1B, the worker, a multi-joint robot arm, a belt conveyor, or other transport means, not shown, moves the wafer WF and the first hard support 110 below the boundary layer forming means 120, the boundary layer forming means 120 drives the laser irradiator 121, and a relative movement mechanism, not shown, relatively moves the laser irradiator 121 and the first hard support 110 in the horizontal direction. Since the focal point of the laser beam LB of the laser irradiator 121 is focused inside the wafer WF, a fracture layer CR along the X-Y plane is formed in the entire inside of the wafer WF as shown in fig. 1C by the relative movement of the laser irradiator 121 and the first hard support 110. When the fracture layer CR is formed in the entire wafer WF, the boundary layer forming unit 120 stops driving the laser irradiator 121.
Thereafter, as shown in fig. 2A, the following state is set: the lower table 130 is located on the opposite side of the wafer WF through the first hard support 110, the first adhesive surface AT21 of the second double-sided adhesive sheet AT2 is adhered to the second hard support 150, the second adhesive surface AT22 of the second double-sided adhesive sheet AT2 is adhered to the entire second surface WF2 of the wafer WF, and the upper table 160 is located on the opposite side of the wafer WF through the second hard support 150. AT this time, the second surface WF2 is stuck to the second adhesion surface AT22 so as not to form bubbles. Note that the entire region of the first adhesive surface AT21 corresponding to the second surface WF2 is preferably attached to the second hard support 150 so as not to form air bubbles.
Then, the first fixing unit 140 and the second fixing unit 170 respectively drive the lower decompression unit 141 and the upper decompression unit 171, and the first hard support 110 is suction-held by the holding surface 131 of the lower table 130, and the second hard support 150 is suction-held by the holding surface 161 of the upper table 160. Note that the method and procedure for positioning the first hard support body 110 on the lower table 130, for adhering the second double-sided adhesive sheet AT2 to the second hard support body 150 and the second surface WF2, or for positioning the second hard support body 150 below the upper table 160 are not particularly limited, and for example, the second double-sided adhesive sheet AT2 may be adhered to the second hard support body 150 and then adhered to the second surface WF2, or the procedure may be reversed.
Thereafter, as shown in fig. 2B, the upper table 160 is rotated in the clockwise direction by driving the rotary motor 181 by the relative movement hand unit 180, and the wafer WF is divided at the boundary of the fracture layer CR, thereby forming the first thinned wafer WT1 and the second thinned wafer WT2 which are thinned.
AT this time, since the second adhesive surface AT12 of the first double-sided adhesive sheet AT1 is adhered to the entire first surface WF1 of the wafer WF and the first adhesive surface AT11 is adhered to the first hard support 110, when a force in a direction away from the first double-sided adhesive sheet AT1 acts on the wafer WF due to the rotation of the upper table 160, the upper table 160 rotates in a state in which the entire wafer WF is restrained from flexing by the first hard support 110. Therefore, the wafer WF can be divided without being damaged, and the first thinned wafer WT1 can be appropriately manufactured.
Further, since the second adhesive surface AT22 of the second double-sided adhesive sheet AT2 is adhered to the entire second surface WF2 of the wafer WF and the first adhesive surface AT21 is adhered to the second hard support 150, when a force in a direction away from the wafer WF acts on the second double-sided adhesive sheet AT2 by the rotation of the upper table 160, the upper table 160 rotates in a state in which the entire wafer WF is restrained from flexing by the second hard support 150. Therefore, the wafer WF can be divided without being damaged, and the second thinned wafer WT2 can be appropriately manufactured.
Further, since the first thinned wafer WT1 and the second thinned wafer WT2 are supported by the first hard support 110 and the second hard support 150, the first thinned wafer WT1 and the second thinned wafer WT2 can be easily transported by holding the first hard support 110 and the second hard support 150.
Next, when the worker or a transport unit not shown holds the first thinned wafer WT1 and the second thinned wafer WT2, the first fixing unit 140 and the second fixing unit 170 stop driving the lower decompression unit 141 and the upper decompression unit 171, respectively, and the suction holding of the first hard support 110 and the second hard support 150 that support the first thinned wafer WT1 and the second thinned wafer WT2 is released.
In the present embodiment, since the first and second fixing units 140 and 170 are configured to fix the first and second hard supports 110 and 150 by suction holding, for example, it is not necessary to remove adhesive components adhering to the holding surface 131 of the lower table 130 and the holding surface 161 of the upper table 160, respectively, after the suction holding is released, as in the case of fixing with an adhesive, and thus a reduction in workability can be suppressed.
Thereafter, when the first thinned wafer WT1 and the second thinned wafer WT2 are conveyed to the next step by the conveying unit not shown, each unit drives each driving device to return each member to the initial position, and thereafter, the same operation as described above is repeated.
According to the above embodiments, the first thinned wafer WT1 and the second thinned wafer WT2 can be manufactured appropriately.
[ variation of embodiment ]
The above description discloses the best configuration, method and the like for carrying out the present invention, but the present invention is not limited thereto. That is, although the present invention has been particularly shown and described with respect to specific embodiments, it will be apparent to those skilled in the art that various changes in shape, material, number and other details of the above-described embodiments may be made without departing from the scope of the technical spirit and objects of the present invention. In addition, the description of the shape, material, and the like disclosed above is an example for easy understanding of the present invention, and the present invention is not limited thereto, and therefore, the description of the name of the member from which a part or all of the limitation of the shape, material, and the like is removed is also included in the present invention.
For example, if the first hard support 110 is used, the wafer WF may be held by suction directly or via the second double-sided adhesive sheet AT2 on the holding surface 161 of the upper table 160 without using the second hard support 150.
If the second hard support 150 is used, the wafer WF may be held by suction by the holding surface 131 of the lower table 130 directly or via the first double-sided adhesive sheet AT1 without using the first hard support 110, and in this case, the second hard support 150 and the second double-sided adhesive sheet AT2 correspond to the first hard support and the first double-sided adhesive sheet of the present invention, respectively.
The boundary layer forming unit 120 may irradiate the wafer WF before being divided with the laser beam LB, and may irradiate the wafer WF before the first double-sided adhesive sheet AT1 is attached with the laser beam LB.
The boundary layer forming unit 120 may irradiate the wafer WF to which the first double-sided adhesive sheet AT1 is bonded from the first double-sided adhesive sheet AT1 side, the wafer WF to which the second double-sided adhesive sheet AT2 is bonded from the first double-sided adhesive sheet AT1 side or the second double-sided adhesive sheet AT2 side, the wafer WF from the outer peripheral surface side thereof, or the first thinned wafer WT1 side, the second thinned wafer WT2 side, or the outer peripheral surface side with the laser beam LB from both or all of them.
When at least one of the first hard support 110 and the second hard support 150 is formed of a material that transmits the laser beam LB, the boundary layer forming unit 120 may irradiate the laser beam LB from the support side formed of the material that transmits the laser beam LB.
The boundary layer forming unit 120 may irradiate the laser beam LB to the wafer WF sucked and held by the lower table 130 or the upper table 160.
The boundary layer forming unit 120 may be a laser irradiator capable of irradiating a laser beam having a linear focal point (linear laser beam) or a laser beam having a planar focal point (planar laser beam), or may be a plurality of laser irradiators.
The boundary layer forming unit 120 can arbitrarily determine the position of the focal point, and the ratio of the thicknesses of the first thinned wafer WT1 and the second thinned wafer WT2 to be formed may be 50 to 50, 1 to 99, or 1000 to 1, and the focal point can be determined according to the desired thickness of the thinned wafer.
The boundary layer forming unit 120 may apply energy rays such as X-rays and ultraviolet rays, vibration, pulsation, and the like to form the fracture layer CR in the middle portion of the wafer WF in the thickness direction.
The boundary layer forming unit 120 may form a modified layer, a void, or the like, in addition to the fracture layer. Note that the fracture layer is a layer in which cracks or flaws are chemically or physically generated in the wafer WF, the modified layer is a layer in which the properties and strength of the wafer WF are chemically or physically modified to be weakened or softened, and the void is a space in which nothing is present or a state in which both layers are in contact with each other with the void being substantially absent interposed therebetween.
The boundary layer forming unit 120 may form a boundary portion along the X-Y plane in a part of the wafer WF.
The boundary layer forming unit 120 may form a boundary layer composed of a plurality of modified portions RP as shown in fig. 3 and 4 instead of the fracture layer CR. Note that in fig. 3 and 4, and fig. 5 and 6 described later, hatching is omitted for the sake of visibility of the drawings.
The boundary layer forming unit 120 is not particularly limited as long as it is a unit that irradiates the laser beam LB that can modify the semiconductor wafer. As the boundary layer forming unit 120, for example, a device used in the stealth dicing method can be used.
In the laser irradiation step for forming the boundary layer, the wafer WF may be irradiated with the laser beam LB from the second surface WF2 side. By the irradiation of the laser beam LB, a plurality of modified portions RP are formed along the dividing plane DP inside the wafer WF. That is, the planar region inside the wafer where the plurality of modified portions RP exist corresponds to the dividing plane DP. The wafer WF is divided with the modified portion RP as a starting point.
When the wafer WF is formed of a material having a crystal orientation, the dividing plane DP preferably coincides with the crystal orientation. If the dividing plane DP and the crystal orientation are aligned, the surfaces (the surfaces corresponding to the dividing plane DP) of the first thinned wafer WT1 and the second thinned wafer WT2 appearing by the divided wafer WF can be made smoother.
The laser irradiation conditions of the laser irradiator 121 are set so that the modified portion RP can be formed inside the wafer WF. Examples of the laser irradiation conditions include, but are not limited to, laser output power, laser frequency, laser irradiation position, and laser wavelength.
In the present specification, the modified portion is a portion weakened or softened by changing the properties or strength of the wafer WF. In the present specification, the modified portion refers to a region including a laser light irradiation point irradiated with the laser light inside the wafer and a peripheral portion formed around the center portion with the laser light irradiation point as the center. The modifying intensity inside the wafer is maximum at the laser irradiation point. The modification intensity of the peripheral portion decreases as it becomes farther from the laser irradiation point.
Although fig. 3 and 4 show the modified portion RP having a circular cross section, the shape and size of the modified portion in the present specification are not limited to those shown in fig. 3 and 4.
The modified portion RP is also preferably formed over the entire dividing surface DP. The number of modified portions RP to be formed is not particularly limited. For example, the number of modified portions RP to be formed can be set according to the material of the wafer WF and the modified intensity of the laser light, so that the wafer WF can be easily divided into the first thinned wafer WT1 and the second thinned wafer WT 2. In addition, the number of modified portions RP to be formed can be set in consideration of productivity of semiconductor wafers.
As shown in fig. 3 and 4, a plurality of modified portions RP may be overlapped with each other.
In this case, the laser beam LB is preferably irradiated along the dividing plane DP at intervals of 1 μm to 350 μm. That is, the laser beam LB is preferably irradiated so that the distance D between the points to which the laser beam LB is irradiated (laser irradiation points) is 1 μm to 350 μm. If the interval D of the laser irradiation points is 1 μm or more, productivity is improved. If the interval between the laser irradiation points is 350 μm or less, it is possible to suppress a problem that cracks are likely to occur in the thickness direction of the wafer WF. The interval D of the laser irradiation points may be the same or different for all the modified portions RP, and may be in the range of 1 μm to 350 μm.
As shown in fig. 5 and 6, the plurality of modified portions RP may be separated from each other.
In this case, the laser beam LB is preferably irradiated along the dividing plane DP at intervals of 1 μm to 350 μm. That is, the laser beam LB is preferably irradiated so that the distance D1 between the points irradiated with the laser beam LB (laser irradiation points) is 1 μm to 350 μm. If the interval D1 between the laser irradiation points is 1 μm or more, productivity is improved. If the interval between the laser irradiation points is 350 μm or less, it is possible to suppress a problem that cracks are likely to occur in the thickness direction of the wafer WF. The laser irradiation point interval D1 may be the same or different for all the modified portions RP, and may be in the range of 1 μm to 350 μm.
The interval between the adjacent modified portions RP (the interval between the end of one modified portion and the end of the other modified portion) is not particularly limited as long as it is a space that can be divided in the plane direction of the wafer WF.
In the configuration of fig. 3, 4, 5, and 6, the interval between the laser irradiation points can be adjusted to a predetermined distance by changing the moving speed of at least one of the stage, not shown, that holds the first hard support 110 and the laser irradiator 32, for example.
In the configuration of fig. 3, 4, 5 and 6, the wafer WF is divided by the dividing plane DP where the plurality of modified portions RP are formed, thereby forming the first thinned wafer WT1 and the second thinned wafer WT 2.
As shown in fig. 3 and 4, if a plurality of modified portions RP are formed so as to overlap each other, more modified portions RP are present along the dividing plane DP, and the wafer WF is easily divided.
As shown in fig. 5 and 6, if a plurality of modified portions RP are formed so as not to overlap each other, the number of laser irradiation points can be reduced, and productivity of the thin plate-like member can be improved.
Note that the shape and size of the modified portion are not limited to those shown in fig. 3, 4, 5, and 6. Examples of the shape of the modified portion include a spherical shape, an ellipsoidal shape, a cylindrical shape, a prismatic shape, a conical shape, and a pyramidal shape. The size of the modified portion is not particularly limited as long as the plate-like member can be divided into a plurality of thin plate-like members. The modifying portion is preferably sized in consideration of the thickness of the plate-like member before division. This is because if the modified portion is too large in the thickness direction of the plate-like member, cracks may be generated in the thickness direction. Therefore, the modified portion may be formed so as to be dividable in the plane direction along the dividing plane.
In addition, although the description has been given by taking as an example a mode in which the plate-like member can be divided into two thin plate-like members, another mode may be a mode in which the plate-like member is divided into three or more thin plate-like members. For example, in the case of dividing the plate-like member into three thin plate-like members, when a divided surface is set in the plate-like member, two divided surfaces (a first divided surface and a second divided surface) are set, and a plurality of modified portions RP may be formed along the first divided surface and a plurality of modified portions RP may be formed along the second divided surface. In addition, another embodiment is a method of forming a plate-shaped member further thinned by performing laser irradiation and division using a thinned plate-shaped member.
The first fixing unit 140 may be configured to fix the first hard support 110 to the lower table 130 by a chuck unit such as a mechanical chuck or a chuck cylinder, coulomb force, an adhesive, a magnetic force, bernoulli suction, a driving device, or the like, and the second fixing unit 170 may be configured in the same manner.
The relative movement hand unit 180 may move the lower table 130 and the upper table 160 relative to each other in the vertical direction to separate the wafer WF in the thickness direction of the wafer WF when dividing the wafer WF, may linearly move the wafer WF relative to each other in the plane direction parallel to the holding surface 131 of the lower table 130 and the holding surface 161 of the upper table 160, may rotate the wafer WF relative to each other in the circumferential direction in the plane parallel to the holding surfaces 131 and 161, or may move or rotate at least one of the lower table 130 and the upper table 160.
The wafer WF may have a circuit surface on the first surface WF1 side, the second surface WF2 side, or both sides, and when the circuit surface is formed in the subsequent process, the circuit surface may be a dividing surface (surface on which the fracture layer CR is formed) divided into the first thinned wafer WT1 and the second thinned wafer WT 2.
In the above-described embodiment and modifications of the embodiment, the following points can be applied.
The materials, types, shapes, and the like of the first double-sided adhesive sheet AT1, the second double-sided adhesive sheet AT2, and the plate-like member are not particularly limited. For example, the first double-sided adhesive sheet AT1 and the second double-sided adhesive sheet AT2 may be polygonal such as circular, oval, triangular, or rectangular shapes, or may be adhesive sheets of other adhesive systems such as pressure-sensitive adhesive and heat-sensitive adhesive, and when the first double-sided adhesive sheet AT1 and the second double-sided adhesive sheet AT2 of heat-sensitive adhesive are used, they may be adhered by an appropriate method such as providing a heating means such as a coil heater or a heating side of a heat pipe for heating the first double-sided adhesive sheet AT1 and the second double-sided adhesive sheet AT 2. The first double-sided adhesive sheet AT1 and the second double-sided adhesive sheet AT2 may be single-layer or multi-layer adhesive sheets having only an adhesive layer and single-layer or multi-layer adhesive sheets having no intermediate layer. Further, the plate-like member may be a food, a resin container, a semiconductor wafer (a silicon semiconductor wafer, a compound semiconductor wafer, or the like), a circuit board, an information recording substrate (an optical disk or the like), a glass plate, a steel plate, a pottery, a wood plate, a resin plate, or any other member or article. Note that the first double-sided adhesive sheet AT1 and the second double-sided adhesive sheet AT2 may be replaced with a functional and versatile reading method, and for example, an information recording label, a decorative label, a protective sheet, a dicing tape, a die bonding film, a die bonding tape, a recording layer forming resin sheet, and any other sheet, film, tape, or the like having any shape may be attached to any of the plate-shaped members described above.
The means and steps in the present invention are not limited to any means or steps insofar as the means or steps can achieve the operations, functions, or steps described for the means or steps, and are not limited to the structures and steps of only one of the embodiments described in the above embodiments. For example, the first hard support may be any one as long as the first adhesive surface of the first double-sided adhesive sheet can be adhered to the support surface, and the technical scope of the present application is not limited to this point (the description of other units and steps is omitted).
The driving device in the above embodiment may be an electric device such as a rotary motor, a linear motor, a single-axis robot, or a multi-joint robot, or an actuator such as a cylinder, a hydraulic cylinder, a rodless cylinder, or a rotary cylinder, or may be a device in which these devices are directly or indirectly combined (or a device overlapping the devices exemplified in the embodiments).
Description of the reference numerals
100 manufacturing apparatus
110 first hard support
111 bearing surface
120 boundary layer forming unit
130 lower working table (first holding unit)
140 first fixing unit
150 second hard support
160 upper working table (second holding unit)
170 second fixing unit
180 relative movement hand unit
First double-sided adhesive sheet of AT1
First adhesive surface of AT11
Second adhesive surface of AT12
Second double-sided adhesive sheet of AT2
First adhesive surface of AT21
Second adhesive surface of AT22
CR fracture layer (boundary layer)
WF wafer (plate-shaped component)
First surface of WF1
Second surface of WF2
WT1 first thinned wafer
WT2 second thinned wafer
Claims (5)
1. A method for manufacturing a thin plate-like member, comprising:
a step of attaching a first adhesive surface of a first double-sided adhesive sheet to a support surface of a first hard support and attaching a second adhesive surface of the first double-sided adhesive sheet to the entire first surface of a plate-like member;
forming a boundary layer parallel to the first surface in the plate-like member;
a step of detachably fixing a first holding unit and a first hard support body such that the first holding unit is positioned on the opposite side of the plate-like member with the first hard support body interposed therebetween;
holding the plate-like member from the second surface side thereof by a second holding means;
and a step of relatively moving the first holding means and the second holding means to divide the plate-like member into a first thin plate-like member having the first surface and a second thin plate-like member having the second surface, with the boundary layer therebetween.
2. The method for manufacturing a thinned plate-like member according to claim 1, wherein the step of forming the plate-like member is performed by a press,
the step of holding the plate-like member from the second surface side by the second holding means includes: the first adhesive surface of a second double-sided adhesive sheet is adhered to a support surface of a second hard support, the second adhesive surface of the second double-sided adhesive sheet is adhered to the entire second surface of the plate-like member, and a second holding means and the second hard support are detachably fixed so that the second holding means is positioned on the opposite side of the plate-like member with the second hard support interposed therebetween.
3. The method for manufacturing a thinned plate-like member according to claim 1 or 2,
the plate like member is a wafer.
4. An apparatus for manufacturing a thin plate-like member, comprising:
a first hard support body having a first adhesive surface of a first double-sided adhesive sheet adhered to a support surface;
boundary layer forming means for forming a boundary layer parallel to the first surface inside a plate-like member having the first surface entirely bonded to the second bonding surface of the first double-sided adhesive sheet;
a first holding unit;
a first fixing unit that detachably fixes the first holding unit and the first hard support body such that the first holding unit is positioned on the opposite side of the plate-like member with the first hard support body interposed therebetween;
a second holding unit that holds the plate-like member from a second surface side;
and a relative movement hand unit that relatively moves the first holding unit and the second holding unit to divide the plate-like member into a first thin plate-like member having the first surface and a second thin plate-like member having the second surface, with the boundary layer as a boundary.
5. The apparatus for manufacturing a thinned plate-like member according to claim 4, comprising:
a second hard support body having the first adhesive surface of the second double-sided adhesive sheet adhered to the support surface;
a second fixing unit that detachably fixes the second holding unit and the second hard support body such that the second holding unit is positioned on the opposite side of the plate-shaped member with the second hard support body interposed therebetween;
the second adhesive surface of the second double-sided adhesive sheet is formed to have a size capable of adhering the entire second surface of the plate-like member.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017169776 | 2017-09-04 | ||
| JP2017-169776 | 2017-09-04 | ||
| PCT/JP2018/030458 WO2019044530A1 (en) | 2017-09-04 | 2018-08-17 | Thinned plate member production method and production device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111052316A true CN111052316A (en) | 2020-04-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880057314.1A Pending CN111052316A (en) | 2017-09-04 | 2018-08-17 | Method and apparatus for manufacturing thin plate-like member |
Country Status (5)
| Country | Link |
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| JP (1) | JP7231548B2 (en) |
| KR (1) | KR102565070B1 (en) |
| CN (1) | CN111052316A (en) |
| TW (1) | TWI783029B (en) |
| WO (1) | WO2019044530A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220270895A1 (en) * | 2019-07-10 | 2022-08-25 | Tokyo Electron Limited | Separating apparatus and separating method |
| WO2021193060A1 (en) * | 2020-03-24 | 2021-09-30 | リンテック株式会社 | Method for manufacturing thinned wafer and device for manufacturing thinned wafer |
| TWI820938B (en) * | 2022-09-29 | 2023-11-01 | 強茂股份有限公司 | Die suction auxiliary device |
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- 2018-08-17 KR KR1020207005303A patent/KR102565070B1/en active IP Right Grant
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- 2018-08-24 TW TW107129545A patent/TWI783029B/en active
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Also Published As
| Publication number | Publication date |
|---|---|
| JP7231548B2 (en) | 2023-03-01 |
| JPWO2019044530A1 (en) | 2020-10-22 |
| KR20200044001A (en) | 2020-04-28 |
| TW201921551A (en) | 2019-06-01 |
| KR102565070B1 (en) | 2023-08-08 |
| WO2019044530A1 (en) | 2019-03-07 |
| TWI783029B (en) | 2022-11-11 |
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