TW201921551A - Thinned plate member production method and production device - Google Patents
Thinned plate member production method and production deviceInfo
- Publication number
- TW201921551A TW201921551A TW107129545A TW107129545A TW201921551A TW 201921551 A TW201921551 A TW 201921551A TW 107129545 A TW107129545 A TW 107129545A TW 107129545 A TW107129545 A TW 107129545A TW 201921551 A TW201921551 A TW 201921551A
- Authority
- TW
- Taiwan
- Prior art keywords
- plate
- wafer
- shaped member
- holding device
- adhesive sheet
- Prior art date
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
Abstract
Description
本發明，係關於薄型化板狀構件之製造方法及製造裝置。This invention relates to the manufacturing method and manufacturing apparatus of a thin plate-shaped member.
以往，已知一種加工被加工物之方法(例如，參閱文獻1：日本特開2015-30005號公報)。
文獻1之方法，係對以保持裝置所保持之被加工物照射雷射光，在被加工物的內部形成改質面。而且，以該改質面為邊界，剝離被加工物之一部分。
在該文獻1，係亦揭示有可將作為被加工物之晶圓從一般厚度加工成較薄的內容。在該情況下，以夾頭座之上面直接吸附保持晶圓的第1表面，並使吸引墊之吸附面接觸於第2表面。而且，考慮可藉由使晶圓吸引至吸引墊的方式，以改質面為邊界，將晶圓分割成具有第1表面之第1薄型化晶圓與具有第2表面之第2薄型化晶圓。
然而，在文獻1之方法中，當無法僅以吸引墊之吸引來分割晶圓時，雖考慮以驅動機器使吸引墊上升，但有發生如以下般的不良情況之虞。
夾頭座之上面，係通常被形成為多孔狀。因此，在晶圓之第1表面，係存在有由夾頭座吸附的部分(以下，稱為「吸附部分」)與未被吸附的部分(以下，稱為「非吸附部分」)。
當吸引墊上升時，則在吸附部分，係作用有吸附盤上升所伴隨之上方向的力及夾頭座的吸附所致之朝向下方向的力，在非吸附部分，係未作用有朝下方向的力。又，在大氣壓環境中，係吸附力具有限制。而且，由於晶圓較薄且容易變形，因此，有導致非吸附部分朝上方向撓曲且晶圓破損而未被分割之虞。Conventionally, a method for processing a workpiece is known (for example, see Document 1: Japanese Patent Application Laid-Open No. 2015-30005).
The method of document 1 is to irradiate laser light to the workpiece held by the holding device to form a modified surface inside the workpiece. A part of the workpiece is peeled off with the modified surface as a boundary.
The document 1 also discloses that a wafer to be processed can be processed from a general thickness to a thinner content. In this case, the first surface of the wafer is directly sucked and held by the upper surface of the chuck, and the suction surface of the suction pad is brought into contact with the second surface. Furthermore, it is considered that the wafer can be divided into a first thin wafer having a first surface and a second thin wafer having a second surface with the modified surface as a boundary by attracting the wafer to the suction pad. circle.
However, in the method of Document 1, when the wafer cannot be divided only by the suction of the suction pad, although it is considered that the suction pad is raised by driving the device, the following problems may occur.
The top of the chuck is usually porous. Therefore, on the first surface of the wafer, there are a portion adsorbed by the chuck (hereinafter referred to as "adsorption portion") and a portion not adsorbed (hereinafter, referred to as "non-adsorption portion").
When the suction pad rises, in the suction part, the upward force accompanying the suction pad rises and the downward force caused by the adsorption of the chuck seat. In the non-adsorption part, the downward force is not applied. Directional force. In addition, in an atmospheric pressure environment, the adsorption force is limited. Furthermore, since the wafer is thin and easily deformed, there is a possibility that the non-adsorbed portion may be bent upward and the wafer may be damaged without being divided.
本發明之目的，係在於提供一種可適切地製造薄型化板狀構件之薄型化板狀構件之製造方法及製造裝置。
本發明之薄型化板狀構件之製造方法，係具備有：將第1兩面黏著片之第1黏著面貼附於第1硬質支撐體的支撐面，並將前述第1兩面黏著片之第2黏著面貼附於板狀構件之第1表面整體的工程；在前述板狀構件的內部形成平行於前述第1表面之邊界層的工程；以夾著前述第1硬質支撐體而第1保持裝置位於前述板狀構件之相反側的方式，裝卸自如地固定前述第1保持裝置與前述第1硬質支撐體的工程；以第2保持裝置，從該板狀構件之第2表面側保持前述板狀構件的工程；及以將前述邊界層設成為邊界，且將前述板狀構件分割成具有前述第1表面之第1薄型化板狀構件及具有前述第2表面之第2薄型化板狀構件的方式，使前述第1保持裝置及前述第2保持裝置相對移動的工程。
在本發明之薄型化板狀構件之製造方法中，「以前述第2保持裝置，從前述第2表面側保持前述板狀構件」的工程，係以將第2兩面黏著片之第1黏著面貼附於第2硬質支撐體的支撐面，並將前述第2兩面黏著片之第2黏著面貼附於前述板狀構件之第2表面整體，且夾著前述第2硬質支撐體而第2保持裝置位於前述板狀構件之相反側的方式，裝卸自如地固定前述第2保持裝置與前述第2硬質支撐體為較佳。
又，在本發明之薄型化板狀構件之製造方法中，前述板狀構件，係晶圓為較佳。
本發明之薄型化板狀構件之製造裝置，係具備有：第1硬質支撐體，在支撐面貼附有第1兩面黏著片之第1黏著面；邊界層形成裝置，在第1表面整體被貼附於前述第1兩面黏著片之第2黏著面之板狀構件的內部，形成平行於前述第1表面之邊界層；第1保持裝置；第1固定裝置，以夾著前述第1硬質支撐體而前述第1保持裝置位於前述板狀構件之相反側的方式，裝卸自如地固定前述第1保持裝置與前述第1硬質支撐體；第2保持裝置，從第2表面側保持前述板狀構件；及相對移動裝置，以將前述邊界層設成為邊界，且將前述板狀構件分割成具有前述第1表面之第1薄型化板狀構件及具有前述第2表面之第2薄型化板狀構件的方式，使前述第1保持裝置與前述第2保持裝置相對移動。
在本發明之薄型化板狀構件之製造裝置中，具備有：第2硬質支撐體，在支撐面貼附有第2兩面黏著片之第1黏著面；及第2固定裝置，以夾著前述第2硬質支撐體而前述第2保持裝置位於前述板狀構件之相反側的方式，裝卸自如地固定前述第2保持裝置與前述第2硬質支撐體，前述第2兩面黏著片之第2黏著面，係被形成為可貼附前述板狀構件之前述第2表面整體的大小為較佳。
根據本發明，能提供一種可適切地製造薄型化板狀構件之薄型化板狀構件之製造方法及製造裝置。An object of the present invention is to provide a method and a device for manufacturing a thin plate-shaped member that can appropriately manufacture a thin plate-shaped member.
The method for manufacturing a thin plate-shaped member according to the present invention includes: attaching a first adhesive surface of a first two-sided adhesive sheet to a support surface of a first hard support; and attaching a second surface of the first two-sided adhesive sheet. A process in which an adhesive surface is adhered to the entire first surface of a plate-like member; a process in which a boundary layer parallel to the first surface is formed inside the plate-like member; a first holding device is sandwiched between the first hard support The method of being located on the opposite side of the plate-like member to fix the first holding device and the first hard support freely; and the second holding device is used to hold the plate-like shape from the second surface side of the plate-shaped member. Component engineering; and setting the boundary layer as a boundary and dividing the plate-shaped member into a first thinned plate-shaped member having the first surface and a second thinned plate-shaped member having the second surface. A method of relatively moving the first holding device and the second holding device.
In the method for manufacturing a thin plate-shaped member according to the present invention, the process of "holding the plate-shaped member from the second surface side by the second holding device" is performed by bonding the first adhesive surface of the second two-sided adhesive sheet. The second rigid support is adhered to the support surface, and the second adhesive surface of the second two-sided adhesive sheet is adhered to the entire second surface of the plate-shaped member, and the second rigid support is sandwiched between the second It is preferable that the holding device is located on the opposite side of the plate-shaped member, and the second holding device and the second hard support body are detachably fixed.
Moreover, in the manufacturing method of the thin plate-shaped member of this invention, it is preferable that the said plate-shaped member is a wafer.
The device for manufacturing a thin plate-shaped member according to the present invention includes: a first hard support body, and a first adhesive surface on which a first two-sided adhesive sheet is attached to the support surface; and a boundary layer forming device, which is The inside of the plate-shaped member attached to the second adhesive surface of the first two-sided adhesive sheet forms a boundary layer parallel to the first surface; a first holding device; a first fixing device to sandwich the first hard support So that the first holding device is located on the opposite side of the plate-shaped member, the first holding device and the first hard support body are detachably fixed; the second holding device holds the plate-shaped member from the second surface side And a relative moving device to set the boundary layer as a boundary and divide the plate-shaped member into a first thinned plate-shaped member having the first surface and a second thinned plate-shaped member having the second surface In one aspect, the first holding device and the second holding device are relatively moved.
The apparatus for manufacturing a thin plate-shaped member according to the present invention includes: a second rigid support, a first adhesive surface on which a second two-sided adhesive sheet is attached to the support surface; and a second fixing device to sandwich the aforementioned The second hard support body and the second holding device are located on the opposite side of the plate-like member, the second holding device and the second hard support body are detachably fixed, and the second adhesive surface of the second two-sided adhesive sheet The size of the second surface that is formed so as to be able to be attached to the plate-shaped member is preferable.
According to the present invention, it is possible to provide a manufacturing method and a manufacturing apparatus for a thin plate-shaped member that can appropriately manufacture a thin plate-shaped member.
發明之實施形態
[實施形態]
以下，基於圖面，說明本發明之一實施形態。
另外，本實施形態中之X軸、Y軸、Z軸，係呈分別正交的關係，X軸及Y軸，係設成為預定平面內的軸，Z軸，係設成為與前述預定平面正交的軸。而且，在本實施方式中，係在表示了方向的情況下，將「上」設成為Z軸的箭頭方向、「下」設成為其反方向，將「左」設成為X軸的箭頭方向、「右」設成為其反方向，將「前」設成為Y軸的箭頭方向、「後」設成為其反方向。
在圖1A~C及圖2A、B中，作為薄型化板狀構件之薄型化晶圓之製造裝置100，係具備有：第1硬質支撐體110，在支撐面111貼附有第1兩面黏著片AT1之第1黏著面AT11；邊界層形成裝置120，在作為「第1表面WF1整體被貼附於第1兩面黏著片AT1之第2黏著面AT12的板狀構件」之晶圓WF的內部，形成作為平行於第1表面WF1之邊界層的破裂層CR；下平台130，作為第1保持裝置；第1固定裝置140，以夾著第1硬質支撐體110而下平台130位於晶圓WF之相反側的方式，裝卸自如地固定下平台130與第1硬質支撐體110；第2硬質支撐體150，在支撐面151貼附有第2兩面黏著片AT2之第1黏著面AT21；上平台160，作為從與第1表面WF1相反側之第2表面WF2側保持晶圓WF的第2保持裝置；第2固定裝置170，以夾著第2硬質支撐體150而上平台160位於晶圓WF之相反側的方式，裝卸自如地固定上平台160與第2硬質支撐體150；及相對移動裝置180，以將破裂層CR設成為邊界，且將晶圓WF分割成作為具有第1表面WF1之第1薄型化板狀構件的第1薄型化晶圓WT1及作為具有第2表面WF2之第2薄型化板狀構件的第2薄型化晶圓WT2之方式，使下平台130及上平台160相對移動。
晶圓WF，係只要為由因雷射照射而改質之材質所構成的晶圓，則不特別限定。雷射，係在隱形切割法中進行照射的雷射為較佳。晶圓WF之材質，係例如選自矽、氮化矽、氮化鎵、砷化鎵、SiC(碳化矽)、藍寶石及玻璃所構成的群為較佳。晶圓WF之材質，係矽為更佳，單晶矽為最佳。又，晶圓WF，係由具有結晶方位的材質所形成亦較佳。
根據本實施形態之晶圓之製造方法，可進一步使厚度較小之板狀構件(晶圓)薄型化，而非如晶錠般之厚度較大的處理對象物。晶圓WF之厚度，係3mm以下為較佳。分割晶圓WF所形成之第1薄型化晶圓WT1及第2薄型化晶圓WT2之厚度的至少任一者，係10μm以上為較佳，30μm以上為更佳。
第1硬質支撐體110及第2硬質支撐體150，係板狀為較佳，其材料或形狀，係只要考慮機械強度來適宜決定即可。作為材料，係例如可列舉出SUS等的金屬材料；玻璃、矽晶圓等的非金屬無機材料；聚醯亞胺、聚醯胺醯亞胺等的樹脂材料；玻璃環氧樹脂等的複合材料等，其中，SUS、玻璃、矽晶圓等較佳。
第1硬質支撐體110及第2硬質支撐體150之厚度，係只要考慮機械強度、處理性等來適宜決定即可，例如100μm以上50mm以下為較佳。
第1硬質支撐體110，係如後述般，只要為「當朝向遠離第1兩面黏著片AT1之方向的力因上平台160之旋轉而作用於晶圓WF時不會變形」者即可，例如彎曲強度為50MPa以上較佳。
又，第2硬質支撐體150之硬度，係如後述般，只要為「當朝向遠離晶圓WF之方向的力因上平台160之旋轉而作用於第2兩面黏著片AT2時不會變形」者即可，例如彎曲強度為50MPa以上較佳。
邊界層形成裝置120，係具備有雷射照射器121。
第1固定裝置140，係被構成為具備有藉由減壓泵或真空抽氣器等所構成的下側減壓裝置141，且可藉由對經由配管142所連接之下平台130之內部空間進行減壓的方式，在下平台130之保持面131吸附保持第1硬質支撐體110。
第2固定裝置170，係被構成為具備有與下側減壓裝置141相同構成的上側減壓裝置171，且可藉由對經由配管172所連接之上平台160之內部空間進行減壓的方式，在上平台160之保持面161吸附保持第2硬質支撐體150。
相對移動裝置180，係具備有：作為驅動機器之轉動馬達181，被配置於下平台130的側方。轉動馬達181之輸出軸182，係被連接於從上平台160之端部延伸至下方的延伸部162。
說明在以上之薄型化晶圓之製造裝置100中，從晶圓WF製造第1薄型化晶圓WT1及第2薄型化晶圓WT2的程序。
首先，如圖1A所示般，準備一在支撐面111貼附有第1兩面黏著片AT1之第1黏著面AT11的第1硬質支撐體110，並將同圖中二點鏈線所示之晶圓WF的第1表面WF1整體如實線所示般地貼附於第2黏著面AT12。此時，以未形成氣泡的方式，將第1表面WF1貼附於第2黏著面AT12。另外，第1黏著面AT11中之與第1表面WF1對應的區域整體，亦以未形成氣泡的方式，被貼附於第1硬質支撐體110為較佳。又，將第1兩面黏著片AT1貼附於第1硬質支撐體110及第1表面WF1之方法或順序，係不特別限定，例如亦可在將第1兩面黏著片AT1貼附於晶圓WF後，貼附於第1硬質支撐體110。
其次，如圖1B所示般，作業員或多關節機器人或皮帶運送機等的未圖示之搬送裝置，係使晶圓WF及第1硬質支撐體110移動至邊界層形成裝置120的下方，邊界層形成裝置120，係驅動雷射照射器121，未圖示之相對移動機構，係使雷射照射器121及第1硬質支撐體110相對地往水平方向移動。由於雷射照射器121之雷射光LB，係其焦點對焦於晶圓WF的內部，因此，藉由雷射照射器121及第1硬質支撐體110之相對移動，如圖1C所示般，在晶圓WF的內部整體形成沿著X-Y平面的破裂層CR。當在晶圓WF的內部整體形成破裂層CR時，則邊界層形成裝置120停止雷射照射器121之驅動。
其後，如圖2A所示般，設成為如下述之狀態：夾著第1硬質支撐體110而下平台130位於晶圓WF之相反側，並在第2硬質支撐體150貼附有第2兩面黏著片AT2的第1黏著面AT21，在晶圓WF之第2表面WF2整體貼附有第2兩面黏著片AT2的第2黏著面AT22，夾著第2硬質支撐體150而上平台160位於晶圓WF之相反側。此時，以未形成氣泡的方式，將第2表面WF2貼附於第2黏著面AT22。另外，第1黏著面AT21中之與第2表面WF2對應的區域整體，亦以未形成氣泡的方式，被貼附於第2硬質支撐體150為較佳。
而且，第1固定裝置140及第2固定裝置170分別驅動下側減壓裝置141及上側減壓裝置171，以下平台130的保持面131吸附保持第1硬質支撐體110，且以上平台160的保持面161吸附保持第2硬質支撐體150。另外，使第1硬質支撐體110位於下平台130上，或使第2兩面黏著片AT2貼附於第2硬質支撐體150及第2表面WF2，或使第2硬質支撐體150位於上平台160之下方的方法或順序，係不特別限定，例如亦可在將第2兩面黏著片AT2貼附於第2硬質支撐體150後，貼附於第2表面WF2，或亦可為與其相反的貼附順序。
其後，如圖2B所示般，相對移動裝置180驅動轉動馬達181，使上平台160往順時鐘方向旋轉，並將破裂層CR設成為邊界且分割晶圓WF，藉此，形成經薄型化之第1薄型化晶圓WT1及第2薄型化晶圓WT2。
此時，由於在晶圓WF之第1表面WF1整體貼附有第1兩面黏著片AT1的第2黏著面AT12，並在第1硬質支撐體110貼附有第1黏著面AT11，因此，當朝向遠離第1兩面黏著片AT1之方向的力因上平台160之旋轉而作用於晶圓WF時，藉由第1硬質支撐體110抑制了晶圓WF整體的撓曲，上平台160進行旋轉。因此，可不使晶圓WF破損且進行分割，並可適切地製造第1薄型化晶圓WT1。
又，由於在晶圓WF之第2表面WF2整體貼附有第2兩面黏著片AT2的第2黏著面AT22，並在第2硬質支撐體150貼附有第1黏著面AT21，因此，當朝向遠離晶圓WF之方向的力因上平台160之旋轉而作用於第2兩面黏著片AT2時，藉由第2硬質支撐體150抑制了晶圓WF整體的撓曲，上平台160進行旋轉。因此，可不使晶圓WF破損而進行分割，並可適切地製造第2薄型化晶圓WT2。
而且，由於以第1硬質支撐體110及第2硬質支撐體150支撐第1薄型化晶圓WT1及第2薄型化晶圓WT2，因此，藉由保持第1硬質支撐體110及第2硬質支撐體150的方式，第1薄型化晶圓WT1及第2薄型化晶圓WT2之搬送則變得容易。
其次，當作業員或未圖示之搬送裝置保持第1薄型化晶圓WT1及第2薄型化晶圓WT2時，則第1固定裝置140及第2固定裝置170分別停止下側減壓裝置141及上側減壓裝置171之驅動，並解除支撐第1薄型化晶圓WT1及第2薄型化晶圓WT2的第1硬質支撐體110及第2硬質支撐體150之吸附保持。
由於在本實施形態中，係應用以吸附保持來固定第1硬質支撐體110及第2硬質支撐體150的構成作為第1固定裝置140及第2固定裝置170，因此，例如在如以黏著劑進行固定的情況般，在吸附保持解除後，無需去除分別附著於下平台130之保持面131及上平台160之保持面161的黏著成分，且可抑制作業性下降。
其後，當未圖示之搬送裝置在下個工程中搬送第1薄型化晶圓WT1及第2薄型化晶圓WT2時，則各裝置驅動各個驅動機器，使各構件復位至初始位置，之後重複上述相同的動作。
根據如以上般的實施形態，可適切地製造第1薄型化晶圓WT1及第2薄型化晶圓WT2。
[實施形態之變形]
如以上般，用以實施本發明之最佳構成、方法等，雖係揭示於前述記載，但本發明並不限定於此。亦即，本發明，雖係主要針對特定之實施形態特別予以圖示並加以說明，但該領域具有通常知識者可不從本發明之技術思想及目的之範圍脫離而對以上敘述之實施形態，在形狀、材質、數量、及其他詳細構成施加各種變形。又，由於在上述揭示之限定形狀、材質等的記載，係為了使本發明易於理解而進行例示性記載者，並非限定本發明者，因此，以脫離該些形狀、材質等的限定之一部分或全部之限定的構件之名稱的記載，係包含於本發明。
例如，只要應用第1硬質支撐體110，則亦可不應用第2硬質支撐體150而直接或經由第2兩面黏著片AT2使上平台160之保持面161吸附保持晶圓WF。
只要應用第2硬質支撐體150，則亦可不應用第1硬質支撐體110而直接或經由第1兩面黏著片AT1使下平台130之保持面131吸附保持晶圓WF，在該情況下，第2硬質支撐體150、第2兩面黏著片AT2分別對應於本發明之第1硬質支撐體、第1兩面黏著片。
邊界層形成裝置120，係只要為對分割之前的晶圓WF照射雷射光LB者即可，例如亦可對貼附第1兩面黏著片AT1之前的晶圓WF照射雷射光LB。
邊界層形成裝置120，係亦可從第1兩面黏著片AT1側對貼附有第1兩面黏著片AT1之晶圓WF照射雷射光LB，或亦可從第1兩面黏著片AT1側或第2兩面黏著片AT2側對貼附有第2兩面黏著片AT2之晶圓WF照射雷射光LB，或亦可從晶圓WF之外周面側照射雷射光LB，或從第1薄型化晶圓WT1側、第2薄型化晶圓WT2側及外周面側中之2個或全部的方向照射雷射光LB。
邊界層形成裝置120，係亦可在第1硬質支撐體110及第2硬質支撐體150的至少一方由使雷射光LB穿透之材料所形成的情況下，從由使該雷射光LB穿透之材料所形成的支撐體側照射雷射光LB。
邊界層形成裝置120，係亦可對以下平台130或上平台160所吸附保持的晶圓WF照射雷射光LB。
邊界層形成裝置120，係亦可採用能照射焦點為線狀之雷射光(線狀雷射光)或焦點為面狀之雷射光(面狀雷射光)的雷射照射器，或採用複數個雷射照射器。
邊界層形成裝置120，係可任意決定焦點的位置，所形成之第1薄型化晶圓WT1與第2薄型化晶圓WT2之厚度的比，係亦可為50對50，或亦可為1對99，或亦可為1000對1，且可依照期望之薄型化晶圓的厚度來決定其焦點。
邊界層形成裝置120，係亦可賦予X射線或紫外線等的能量線或振動或脈動等，在晶圓WF之厚度方向中間部形成破裂層CR。
邊界層形成裝置120，係除了破裂層以外，亦可形成改質層或空隙等。另外，破裂層，係指以化學性或物理性的方式，在晶圓WF產生龜裂或破裂之層，改質層，係指以化學性或物理性的方式，變更晶圓WF之性質或強度而脆化抑或軟化之層，空隙，雖係指什麼皆無之空間抑或實質上什麼皆無，但包含夾著該空隙之兩者接觸的狀態。
邊界層形成裝置120，係亦可在晶圓WF之內部部分地形成沿著X-Y平面的邊界部。
邊界層形成裝置120，係亦可形成從如圖3、圖4所示般之複數個改質部RP所構成的邊界層來替代破裂層CR。另外，在圖3、圖4及後述的圖5、圖6中，從圖之辨識性的觀點來看，省略陰影線。
邊界層形成裝置120，係只要為照射可對半導體晶圓進行改質之雷射光LB的裝置，則不特別限定。作為邊界層形成裝置120，係例如亦可使用隱形切割法所採用的裝置。
在形成邊界層之雷射照射工程中，係亦可從晶圓WF之第2表面WF2側照射雷射光LB。藉由該雷射光LB之照射，沿著晶圓WF之內部的分割面DP形成複數個改質部RP。亦即，存在複數個改質部RP之晶圓內部之面狀的區域相當於分割面DP。以改質部RP為起點，分割晶圓WF。
在晶圓WF由具有結晶方位之材質所形成的情況下，分割面DP與結晶方位一致為較佳。只要分割面DP與結晶方位一致，則可使藉由晶圓WF之分割所呈現的第1薄型化晶圓WT1及第2薄型化晶圓WT2之表面(與分割面DP對應之面)更平滑。
雷射照射器121，係以可在晶圓WF之內部形成改質部RP的方式，設定雷射照射條件。作為雷射照射條件，雖係例如可列舉出雷射輸出、雷射頻率、雷射照射位置及雷射波長等，但並不限定於此。
在本說明書中，改質部，係使晶圓WF之性質或強度產生變化而脆化抑或軟化的部位。在本說明書中，改質部，係指包含有雷射照射點與周邊部的區域，該雷射照射點，係照射了晶圓之內部的雷射，該周邊部，係以該雷射照射點為中心部，被形成於該中心部之周邊。晶圓的內部之改質強度，係在雷射照射點中為最大。周邊部之改質強度，係越遠離雷射照射點越降低。
在圖3及圖4，雖係表示有剖面為圓形的改質部RP，但本說明書中之改質部的形狀或大小，係不限定於如圖3及圖4所示般的形狀。
改質部RP，係亦以遍及分割面DP之整體的方式形成為較佳。形成之改質部RP的個數，係不特別限定。例如，亦可以因應晶圓WF的材質及雷射所致之改質強度，容易分割成第1薄型化晶圓WT1及第2薄型化晶圓WT2的方式，設定形成之改質部RP的個數。又，亦可考慮半導體晶圓之生產率，設定形成之改質部RP的個數。
又，例如，如圖3及圖4所示般，複數個改質部RP，係亦可相互重疊。
此時，沿著分割面DP而以1μm以上350μm以下的間隔照射雷射光LB為較佳。亦即，以使照射了雷射光LB的點(雷射照射點)彼此之間隔D成為1μm以上350μm以下的方式，照射雷射光LB為較佳。只要雷射照射點之間隔D為1μm以上，則生產率提高。只要雷射照射點之間隔為350μm以下，則可抑制晶圓WF之厚度方向容易出現龜裂的不良狀況 。雷射照射點之間隔D，係只要為1μm以上350μm以下的範圍內，則在所有改質部RP中，亦可為相同或亦可不同。
又，如圖5及圖6所示般，複數個改質部RP，係亦可相互分離。
此時，沿著分割面DP而以1μm以上350μm以下的間隔照射雷射光LB為較佳。亦即，以使照射了雷射光LB的點(雷射照射點)彼此之間隔D1成為1μm以上350μm以下的方式，照射雷射光LB為較佳。只要雷射照射點之間隔D1為1μm以上，則生產率提高。只要雷射照射點之間隔為350μm以下，則可抑制晶圓WF之厚度方向容易出現龜裂的不良狀況 。雷射照射點之間隔D1，係只要為1μm以上350μm以下的範圍內，則在所有改質部RP中，亦可為相同或亦可不同。
相鄰之改質部RP彼此的間隔(一方之改質部的端與另一方之改質部的端之間隔)，係只要為可在晶圓WF之面方向分割的間隔，則不特別限定。
在圖3、圖4、圖5及圖6的構成中，雷射照射點之間隔，係例如使保持第1硬質支撐體110之未圖示的平台及雷射照射器32之至少任一者的移動速度變化，藉此，可調整成預定距離。
而且，在圖3、圖4、圖5及圖6的構成中，以形成有複數個改質部RP之分割面DP為邊界而分割晶圓WF，藉此，形成第1薄型化晶圓WT1及第2薄型化晶圓WT2。
如圖3及圖4所示般，只要以相互重疊的方式形成複數個改質部RP，則存在有更大量之沿著分割面DP的改質部RP，從而變得容易分割晶圓WF。
如圖5及圖6所示般，只要以不相互重疊的方式形成複數個改質部RP，則可減少雷射照射點之數量，並使薄型化板狀構件的生產率提高。
另外，改質部之形狀或大小，係不限定於如圖3、圖4、圖5及圖6所示般的形狀。作為改質部之形狀，係例如可列舉出球狀、楕圓球狀、圓柱狀、角柱狀、圓錐狀及角錐狀等。改質部之大小，係只要為可將板狀構件分割成複數個薄型化板狀構件者，則不特別限定。改質部，係考慮了分割前之板狀構件之厚度的大小為較佳。因為當改質部在板狀構件之厚度方向過大時，則有在厚度方向產生龜裂之虞。因此，改質部，係只要形成為可在沿著分割面的面方向進行分割即可。
又，雖以將板狀構件分割成2個薄型化板狀構件的態樣為例而進行了說明，但作為其他態樣，係可列舉出將板狀構件分割成3個薄型化板狀構件的態樣。例如，在分割成3個薄型化板狀構件的情況下，係當在板狀構件的內部設定分割面之際，只要設定2個分割面(第1分割面及第2分割面)，沿著第1分割面形成複數個改質部RP，並沿著第2分割面形成複數個改質部RP即可。又，作為其他態樣，係亦可列舉出使用薄型化板狀構件實施雷射照射及分割，形成更薄型化之板狀構件的態樣。
第1面固定裝置140，係亦可設成為以機械夾具或夾頭筒等的夾頭裝置、庫倫力、黏著劑、 粘著劑、磁力、白努利吸附、驅動機器等來將第1硬質支撐體110固定於下平台130的構成，或第2固定裝置170亦進行相同構成。
相對移動裝置180，係亦可在分割晶圓WF之際，使下平台130與上平台160沿上下方向相對移動，並使該晶圓WF在晶圓WF的厚度方向上分離，或亦可使其沿平行於下平台130之保持面131或上平台160之保持面161的面方向直線地相對移動，或使其在平行於保持面131、保持面161之平行的面內沿圓周方向相對旋轉，且亦可使下平台130及上平台160的至少一方移動或旋轉。
晶圓WF，係亦可為具有電路面者，該電路面，係亦可為第1表面WF1側，或亦可為第2表面WF2側，或亦可為該些兩者的面側，在以後續工程形成電路面的情況下，係亦可為被分割成第1薄型化晶圓WT1及第2薄型化晶圓WT2的分割面(形成有破裂層CR之面)。
此外，在前述之實施形態及實施形態的變形中，係可應用以下要點。
第1兩面黏著片AT1、第2兩面黏著片AT2及板狀構件的材質、類別、形狀等，係不特別限定。例如，第1兩面黏著片AT1及第2兩面黏著片AT2，係亦可為圓形、橢圓形、三角形或四角形等的多角形及其他形狀，或亦可為感壓黏著性及感熱黏著性等的黏著形態者，在採用了感熱黏著性之第1兩面黏著片AT1及第2兩面黏著片AT2的情況下，係只要以「設置將該第1兩面黏著片AT1及第2兩面黏著片AT2進行加熱之適宜的線圈加熱器或熱導管之加熱側等的加熱裝置」這樣的適宜之方法來予以黏著即可。又，像這樣的第1兩面黏著片AT1及第2兩面黏著片AT2，係亦可為具有僅黏著劑層的單層或複層的中間層者，抑或亦可為無中間層的單層或複層者。又，作為板狀構件，係例如食品、樹脂容器、半導體晶圓(矽半導體晶圓及化合物半導體晶圓等)、電路基板、資訊記錄基板(光碟等)、玻璃板、鋼板、陶器、木板及樹脂板等和任意形態的構件或物品等亦可作為對象。另外，可將第1兩面黏著片AT1及第2兩面黏著片AT2變換成功能性、用途性的讀取方式，例如，將資訊記載用標籤、裝飾用標籤、保護薄片、切割帶、晶粒貼覆膜、晶粒接合帶及記錄層形成樹脂薄片等的任意形狀之任意薄片、薄膜、膠帶等貼附於如前述般的任意板狀構件。
本發明中之裝置及工程，係只要可達成關於該些裝置及工程所說明的動作、功能或工程，則不加以限定，而且，完全不限定於前述實施形態所示之單一實施形態的構成物或工程。例如，第1硬質支撐體，係只要為可將第1兩面黏著片之第1黏著面貼附於支撐面者，比對當初申請的技術常識而在其技術範圍內者，則不加以限定(省略關於其他裝置及工程的說明)。
又，前述實施形態中之驅動機器，係可採用轉動馬達、直動馬達、線性馬達、單軸機械手臂、多關節機械手臂等的電動機器、氣缸、油壓缸、無桿缸及旋轉缸等的致動器等，並且亦可採用將該些直接或間接地組合者(亦有與在實施形態所例示重複者)。Embodiment of the invention
[Embodiment]
Hereinafter, one embodiment of the present invention will be described based on the drawings.
In this embodiment, the X-axis, Y-axis, and Z-axis are orthogonal to each other. The X-axis and Y-axis are set to axes in a predetermined plane, and the Z-axis is set to be positive with the predetermined plane. Intersecting axes. Further, in the present embodiment, when the direction is indicated, "up" is set to the direction of the arrow of the Z axis, "down" is set to the opposite direction, and "left" is set to the direction of the X axis arrow, "Right" is set in the opposite direction, "front" is set in the direction of the arrow on the Y axis, and "back" is set in the opposite direction.
In FIGS. 1A to 2C and FIGS. 2A and 2B, a thin wafer manufacturing apparatus 100 as a thin plate-shaped member is provided with a first hard support 110, and a first two surfaces are attached to a support surface 111. The first adhesive surface AT11 of the sheet AT1; the boundary layer forming device 120 is inside the wafer WF which is “a plate-shaped member on which the first surface WF1 as a whole is attached to the second adhesive surface AT12 of the first two-sided adhesive sheet AT1”. A rupture layer CR is formed as a boundary layer parallel to the first surface WF1; the lower platform 130 is used as a first holding device; the first fixing device 140 is configured to sandwich the first hard support 110 and the lower platform 130 is located on the wafer WF On the opposite side, the lower platform 130 and the first hard support body 110 can be detachably fixed; the second hard support body 150 has the first adhesive surface AT21 of the second two-sided adhesive sheet AT2 attached to the support surface 151; the upper platform 160 serves as a second holding device for holding the wafer WF from the second surface WF2 side opposite to the first surface WF1; the second fixing device 170 holds the second hard support 150 and the upper platform 160 is located on the wafer WF On the opposite side, the upper platform 160 and the second rigid support 150 can be fixed freely; and The moving device 180 sets the fracture layer CR as a boundary and divides the wafer WF into a first thinned wafer WT1 as a first thinned plate-like member having a first surface WF1 and as a thinned wafer WT1 having a second surface WF2. In the form of the second thin wafer WT2 of the second thin plate member, the lower stage 130 and the upper stage 160 are relatively moved.
The wafer WF is not particularly limited as long as it is a wafer made of a material modified by laser irradiation. The laser is preferably a laser that is irradiated in the stealth cutting method. The material of the wafer WF is preferably selected from the group consisting of silicon, silicon nitride, gallium nitride, gallium arsenide, SiC (silicon carbide), sapphire, and glass. The material of the wafer WF is preferably silicon, and monocrystalline silicon is the best. It is also preferable that the wafer WF is formed of a material having a crystal orientation.
According to the method for manufacturing a wafer according to this embodiment, it is possible to further reduce the thickness of a plate-shaped member (wafer) having a smaller thickness instead of a processing target having a larger thickness like an ingot. The thickness of the wafer WF is preferably 3 mm or less. At least one of the thickness of the first thin wafer WT1 and the second thin wafer WT2 formed by dividing the wafer WF is preferably 10 μm or more, and more preferably 30 μm or more.
The first rigid support 110 and the second rigid support 150 are preferably plate-shaped, and their materials or shapes may be appropriately determined in consideration of mechanical strength. Examples of the material include metal materials such as SUS; non-metallic inorganic materials such as glass and silicon wafers; resin materials such as polyimide and polyimide; and composite materials such as glass epoxy resin. Etc. Among them, SUS, glass, silicon wafer, etc. are preferred.
The thicknesses of the first rigid support 110 and the second rigid support 150 may be appropriately determined in consideration of mechanical strength, handling properties, and the like, and are preferably 100 μm or more and 50 mm or less, for example.
The first rigid support 110 is as described below, as long as it is "the force will not deform when acting on the wafer WF due to the rotation of the upper platform 160 when the force in the direction away from the first two-sided adhesive sheet AT1 does not deform", for example, The bending strength is preferably 50 MPa or more.
In addition, the hardness of the second rigid support 150 is as described below, as long as it "will not deform when the force in a direction away from the wafer WF acts on the second two-sided adhesive sheet AT2 due to the rotation of the upper platform 160". That is, for example, the bending strength is preferably 50 MPa or more.
The boundary layer forming device 120 includes a laser irradiator 121.
The first fixing device 140 is configured to include a lower pressure reducing device 141 configured by a pressure reducing pump, a vacuum aspirator, or the like, and can be connected to the internal space of the lower platform 130 through a pipe 142. In the method of reducing the pressure, the first rigid support 110 is held on the holding surface 131 of the lower platform 130 by suction.
The second fixing device 170 is configured to include an upper pressure reducing device 171 having the same structure as the lower pressure reducing device 141, and can reduce the pressure of the internal space of the upper platform 160 connected through a pipe 172. The second rigid support 150 is held on the holding surface 161 of the upper platform 160 by suction.
The relative movement device 180 includes a rotation motor 181 as a driving device, and is disposed on the side of the lower platform 130. An output shaft 182 of the rotation motor 181 is connected to an extension portion 162 extending from an end portion of the upper platform 160 to a lower portion.
The procedure for manufacturing the first thin wafer WT1 and the second thin wafer WT2 from the wafer WF in the thin wafer manufacturing apparatus 100 described above will be described.
First, as shown in FIG. 1A, a first hard support 110 having a first adhesive surface AT11 with a first two-sided adhesive sheet AT1 attached to a support surface 111 is prepared, and will be shown as a two-dot chain line in the figure. The entire first surface WF1 of the wafer WF is attached to the second adhesive surface AT12 as shown by the solid line. At this time, the first surface WF1 is attached to the second adhesive surface AT12 so that no bubbles are formed. In addition, the entire area of the first adhesive surface AT11 corresponding to the first surface WF1 is also preferably attached to the first rigid support 110 without forming bubbles. The method or sequence of attaching the first two-sided adhesive sheet AT1 to the first hard support 110 and the first surface WF1 is not particularly limited. For example, the first two-sided adhesive sheet AT1 may be attached to the wafer WF. After that, it is attached to the first rigid support 110.
Next, as shown in FIG. 1B, an unillustrated transfer device such as an operator, a multi-joint robot, or a belt conveyor moves the wafer WF and the first hard support 110 below the boundary layer forming device 120. The boundary layer forming device 120 drives the laser irradiator 121, and a relative moving mechanism (not shown) moves the laser irradiator 121 and the first hard support 110 relatively horizontally. Since the laser light LB of the laser irradiator 121 is focused on the inside of the wafer WF, the relative movement of the laser irradiator 121 and the first hard support 110 is as shown in FIG. 1C. A crack layer CR is formed along the XY plane as a whole inside the wafer WF. When the cracked layer CR is entirely formed inside the wafer WF, the boundary layer forming apparatus 120 stops driving the laser irradiator 121.
Thereafter, as shown in FIG. 2A, it is assumed that the lower stage 130 is located on the opposite side of the wafer WF with the first hard support 110 interposed therebetween, and the second hard support 150 is attached with the second The first adhesive surface AT21 of the two-sided adhesive sheet AT2 has the second adhesive surface AT22 of the second two-sided adhesive sheet AT2 entirely attached to the second surface WF2 of the wafer WF. The second rigid support 150 is sandwiched between the upper platform 160 and the upper platform 160. Opposite side of wafer WF. At this time, the second surface WF2 is attached to the second adhesive surface AT22 so that no bubbles are formed. In addition, the entire area of the first adhesive surface AT21 corresponding to the second surface WF2 is also preferably attached to the second rigid support 150 without forming bubbles.
In addition, the first fixing device 140 and the second fixing device 170 drive the lower pressure reducing device 141 and the upper pressure reducing device 171, respectively, and the holding surface 131 of the lower platform 130 adsorbs and holds the first hard support 110, and the holding of the upper platform 160 The surface 161 sucks and holds the second rigid support 150. In addition, the first hard support body 110 is located on the lower platform 130, or the second two-sided adhesive sheet AT2 is attached to the second hard support body 150 and the second surface WF2, or the second hard support body 150 is located on the upper platform 160. The method or sequence below is not particularly limited. For example, after the second two-sided adhesive sheet AT2 is attached to the second rigid support 150, it may be attached to the second surface WF2, or it may be an opposite sticker. Attached order.
Thereafter, as shown in FIG. 2B, the relative moving device 180 drives the rotation motor 181, rotates the upper stage 160 in a clockwise direction, sets the cracking layer CR as a boundary, and divides the wafer WF, thereby forming a thin film. The first thinned wafer WT1 and the second thinned wafer WT2.
At this time, the second adhesive surface AT12 of the first two-sided adhesive sheet AT1 is attached to the entire first surface WF1 of the wafer WF, and the first adhesive surface AT11 is attached to the first hard support 110. Therefore, when When a force in a direction away from the first two-sided adhesive sheet AT1 acts on the wafer WF due to the rotation of the upper stage 160, the first hard support 110 suppresses the entire deflection of the wafer WF, and the upper stage 160 rotates. Therefore, the first thin wafer WT1 can be appropriately manufactured without breaking and dividing the wafer WF.
In addition, the second adhesive surface AT22 of the second two-sided adhesive sheet AT2 is attached to the entire second surface WF2 of the wafer WF, and the first adhesive surface AT21 is attached to the second hard support 150. When a force in a direction away from the wafer WF is applied to the second two-sided adhesive sheet AT2 due to the rotation of the upper stage 160, the second hard support 150 suppresses the entire deflection of the wafer WF, and the upper stage 160 rotates. Therefore, it is possible to divide the wafer without breaking the wafer WF, and it is possible to appropriately manufacture the second thin wafer WT2.
In addition, since the first thin wafer WT1 and the second thin wafer WT2 are supported by the first hard support 110 and the second hard support 150, the first hard support 110 and the second hard support are held. The method of the body 150 facilitates the transfer of the first thin wafer WT1 and the second thin wafer WT2.
Next, when an operator or a transfer device (not shown) holds the first thin wafer WT1 and the second thin wafer WT2, the first fixing device 140 and the second fixing device 170 stop the lower pressure reducing device 141, respectively. And driving of the upper pressure reducing device 171, and release and hold the first hard support 110 and the second hard support 150 supporting the first thin wafer WT1 and the second thin wafer WT2.
In the present embodiment, the structure in which the first rigid support 110 and the second rigid support 150 are fixed by adsorption and holding is used as the first fixing device 140 and the second fixing device 170. Therefore, for example, an adhesive is used, for example. In the case of fixing, it is not necessary to remove the adhesive components that are respectively attached to the holding surface 131 of the lower platform 130 and the holding surface 161 of the upper platform 160 after the adsorption and holding are released, and it is possible to suppress a decrease in workability.
Thereafter, when the first thin wafer WT1 and the second thin wafer WT2 are transferred by a transfer device (not shown) in the next process, each device drives each driving machine to reset each component to the initial position, and repeats thereafter. The same action as above.
According to the embodiment described above, the first thinned wafer WT1 and the second thinned wafer WT2 can be appropriately manufactured.
[Deformation of implementation form]
As described above, although the best configuration and method for implementing the present invention are disclosed in the foregoing description, the present invention is not limited thereto. That is, although the present invention is specifically illustrated and explained mainly for a specific embodiment, those with ordinary knowledge in the field may not deviate from the scope of the technical idea and purpose of the present invention, and implement the above-described embodiment in The shape, material, number, and other detailed structures impose various deformations. In addition, since the descriptions of the shapes, materials, and the like disclosed in the above are exemplified for the purpose of making the present invention easier to understand, they are not limited to the present inventors. Therefore, they should be separated from these shapes, materials, and the like as a part or The descriptions of the names of all limited members are included in the present invention.
For example, as long as the first hard support 110 is applied, the wafer WF may be held by the holding surface 161 of the upper platform 160 directly or via the second two-sided adhesive sheet AT2 without using the second hard support 150.
As long as the second hard support 150 is applied, the first hard support 110 may not be used, and the holding surface 131 of the lower platform 130 may be used to adsorb and hold the wafer WF directly or via the first two-sided adhesive sheet AT1. In this case, the second The hard support 150 and the second double-sided adhesive sheet AT2 correspond to the first hard support and the first double-sided adhesive sheet of the present invention, respectively.
The boundary layer forming device 120 is only required to irradiate the laser light LB to the wafer WF before the division, and for example, the wafer WF before the first double-sided adhesive sheet AT1 is attached may be irradiated with the laser light LB.
The boundary layer forming device 120 can also irradiate the laser light LB to the wafer WF to which the first two-sided adhesive sheet AT1 is attached from the first two-sided adhesive sheet AT1 side, or the first two-sided adhesive sheet AT1 side or the second The two-sided adhesive sheet AT2 side irradiates the laser light LB to the wafer WF to which the second two-sided adhesive sheet AT2 is attached, or the laser light LB may be irradiated from the outer peripheral side of the wafer WF, or the first thinned wafer WT1 side The laser light LB is irradiated in two or all directions of the second thinned wafer WT2 side and the outer peripheral surface side.
The boundary layer forming device 120 may be configured to penetrate the laser light LB when at least one of the first hard support 110 and the second hard support 150 is formed of a material that penetrates the laser light LB. The support side formed of the material is irradiated with laser light LB.
The boundary layer forming device 120 can also irradiate the laser light LB to the wafer WF adsorbed and held by the lower platform 130 or the upper platform 160.
The boundary layer forming device 120 may also be a laser irradiator capable of irradiating laser light having a linear focal point (linear laser light) or laser light having a planar focal point (plane laser light), or a plurality of lasers. Shoot the irradiator.
The boundary layer forming device 120 can arbitrarily determine the position of the focus. The ratio of the thickness of the first thin wafer WT1 and the second thin wafer WT2 formed can be 50 to 50, or 1 It can be 99, or 1000 to 1, and its focus can be determined according to the desired thickness of the thin wafer.
The boundary layer forming device 120 is also capable of imparting energy rays such as X-rays, ultraviolet rays, vibrations, pulsations, and the like, and forming a cracked layer CR in the middle portion in the thickness direction of the wafer WF.
The boundary layer forming device 120 may form a modified layer, a void, or the like in addition to the cracked layer. In addition, a cracked layer refers to a layer that causes cracks or cracks in the wafer WF in a chemical or physical manner, and a modified layer refers to a chemical or physical manner that changes the properties of the wafer WF or The layer of strength and brittleness or softening, and the void, mean a space containing nothing or substantially nothing, but include a state where the two are in contact with each other through the gap.
The boundary layer forming device 120 may also form a boundary portion along the XY plane inside the wafer WF.
The boundary layer forming device 120 may also form a boundary layer composed of a plurality of modified portions RP as shown in FIGS. 3 and 4 instead of the fracture layer CR. In addition, in FIGS. 3 and 4 and FIGS. 5 and 6 described later, hatching is omitted from the viewpoint of visibility of the drawings.
The boundary layer forming device 120 is not particularly limited as long as it is a device that irradiates laser light LB that can modify a semiconductor wafer. As the boundary layer forming device 120, for example, a device used by the stealth cutting method can also be used.
In the laser irradiation process for forming the boundary layer, the laser light LB may also be irradiated from the second surface WF2 side of the wafer WF. By the irradiation of the laser light LB, a plurality of modified portions RP are formed along the dividing plane DP inside the wafer WF. That is, the planar area inside the wafer in which the plurality of modified portions RP exist is equivalent to the divided surface DP. The wafer WF is divided with the reforming section RP as a starting point.
In the case where the wafer WF is formed of a material having a crystal orientation, it is preferable that the dividing plane DP coincides with the crystal orientation. As long as the dividing plane DP is aligned with the crystal orientation, the surfaces of the first thinned wafer WT1 and the second thinned wafer WT2 (surfaces corresponding to the divided plane DP) presented by the division of the wafer WF can be made smoother. .
The laser irradiator 121 sets a laser irradiation condition so that a modified portion RP can be formed inside the wafer WF. Examples of the laser irradiation conditions include, but are not limited to, laser output, laser frequency, laser irradiation position, and laser wavelength.
In this specification, the modified portion refers to a portion that changes the nature or strength of the wafer WF to become brittle or softened. In this specification, the modified portion refers to a region including a laser irradiation point and a peripheral portion. The laser irradiation point is a laser that irradiates the inside of a wafer, and the peripheral portion is irradiated with the laser. The point is a center portion and is formed around the center portion. The internal modification intensity of the wafer is the largest among the laser irradiation points. The intensity of the modification of the peripheral part decreases as the distance from the laser irradiation point decreases.
Although FIGS. 3 and 4 show the reformed portion RP having a circular cross section, the shape or size of the reformed portion in this specification is not limited to the shape shown in FIGS. 3 and 4.
The modified portion RP is also preferably formed so as to cover the entire divided surface DP. The number of the modified portions RP formed is not particularly limited. For example, it is also possible to set the number of the reformed portions RP formed according to the method of easily dividing the first thinned wafer WT1 and the second thinned wafer WT2 according to the material quality of the wafer WF and the modified strength caused by laser. number. In addition, the number of modified portions RP to be formed may be set in consideration of the productivity of the semiconductor wafer.
For example, as shown in FIG. 3 and FIG. 4, a plurality of modified portions RP may overlap each other.
At this time, it is preferable to irradiate the laser light LB at intervals of 1 μm to 350 μm along the dividing plane DP. That is, it is preferable to irradiate the laser light LB so that the distance D between the points (laser irradiation points) irradiated with the laser light LB becomes 1 μm or more and 350 μm or less. As long as the interval D between the laser irradiation points is 1 μm or more, productivity is improved. As long as the interval between the laser irradiation points is 350 μm or less, it is possible to suppress a defect that cracks easily occur in the thickness direction of the wafer WF. As long as the interval D between the laser irradiation points is within a range of 1 μm to 350 μm, all the modified portions RP may be the same or different.
Moreover, as shown in FIG. 5 and FIG. 6, the plurality of modified portions RP may be separated from each other.
At this time, it is preferable to irradiate the laser light LB at intervals of 1 μm to 350 μm along the dividing plane DP. That is, it is preferable to irradiate the laser light LB so that the distance D1 between the points (laser irradiation points) irradiated with the laser light LB becomes 1 μm or more and 350 μm or less. As long as the interval D1 between the laser irradiation points is 1 μm or more, productivity is improved. As long as the interval between the laser irradiation points is 350 μm or less, it is possible to suppress a defect that cracks easily occur in the thickness direction of the wafer WF. The interval D1 between the laser irradiation points is within the range of 1 μm to 350 μm, and may be the same or different in all the modified portions RP.
The interval between the adjacent modified portions RP (the interval between the end of one modified portion and the end of the other modified portion) is not particularly limited as long as it is an interval that can be divided in the plane direction of the wafer WF. .
In the configurations of FIGS. 3, 4, 5, and 6, the interval between the laser irradiation points is, for example, at least one of a non-illustrated platform holding the first hard support 110 and the laser irradiator 32. The moving speed can be adjusted to a predetermined distance.
In addition, in the configuration of FIGS. 3, 4, 5, and 6, the wafer WF is divided with the dividing plane DP on which the plurality of modified portions RP are formed as a boundary, thereby forming the first thinned wafer WT1. And the second thinned wafer WT2.
As shown in FIG. 3 and FIG. 4, as long as a plurality of modified portions RP are formed so as to overlap each other, there are a larger number of modified portions RP along the dividing plane DP, and it becomes easy to divide the wafer WF.
As shown in FIGS. 5 and 6, as long as a plurality of modified portions RP are formed so as not to overlap each other, the number of laser irradiation spots can be reduced, and the productivity of a thin plate-shaped member can be improved.
The shape or size of the modified portion is not limited to the shape shown in FIGS. 3, 4, 5, and 6. Examples of the shape of the modified portion include a spherical shape, a spheroidal shape, a cylindrical shape, an angular columnar shape, a conical shape, and a pyramidal shape. The size of the modified portion is not particularly limited as long as the plate-shaped member can be divided into a plurality of thin plate-shaped members. The modified portion is preferably a thickness of the plate-like member before division. This is because when the modified portion is too large in the thickness direction of the plate-like member, there is a possibility that cracks may occur in the thickness direction. Therefore, the modified portion may be formed so that it can be divided in the plane direction along the divided surface.
In addition, although the embodiment in which the plate-shaped member is divided into two thin plate-shaped members has been described as an example, as another aspect, the plate-shaped member is divided into three thin plate-shaped members. Appearance. For example, when dividing into three thin plate-like members, when setting the dividing plane inside the plate-like member, just set two dividing planes (the first dividing plane and the second dividing plane) and follow The first divided surface may form a plurality of modified portions RP, and a plurality of modified portions RP may be formed along the second divided surface. Moreover, as another aspect, the aspect which implemented the laser irradiation and division using the thin plate-shaped member to form a thinner plate-shaped member is also mentioned.
The first surface fixing device 140 can also be provided as a chuck device such as a mechanical jig or a chuck, a Coulomb force, an adhesive, an adhesive, a magnetic force, a Bai Nuli adsorption, a driving device, etc. The structure in which the support body 110 is fixed to the lower platform 130 or the second fixing device 170 has the same structure.
The relative moving device 180 can also relatively move the lower platform 130 and the upper platform 160 in the vertical direction when the wafer WF is divided, and separate the wafer WF in the thickness direction of the wafer WF. It moves linearly relative to each other in a plane direction parallel to the holding surface 131 of the lower platform 130 or the holding surface 161 of the upper platform 160, or relatively rotates in a circumferential direction within a parallel plane parallel to the holding surface 131 and the holding surface 161. Also, at least one of the lower platform 130 and the upper platform 160 may be moved or rotated.
The wafer WF may also have a circuit surface, and the circuit surface may also be the first surface WF1 side, or may be the second surface WF2 side, or may be the surface side of both of them. When the circuit surface is formed in a subsequent process, it may be a divided surface (a surface on which the cracked layer CR is formed) divided into the first thinned wafer WT1 and the second thinned wafer WT2.
In addition, the following points can be applied to the foregoing embodiments and modifications of the embodiments.
The materials, types, and shapes of the first two-sided adhesive sheet AT1, the second two-sided adhesive sheet AT2, and the plate-like member are not particularly limited. For example, the first two-sided adhesive sheet AT1 and the second two-sided adhesive sheet AT2 may be polygons and other shapes such as circles, ellipses, triangles, or quadrangles, or they may be pressure-sensitive adhesive and heat-sensitive adhesive, etc. In the case of the adhesive form, when the first two-sided adhesive sheet AT1 and the second two-sided adhesive sheet AT2 with heat-sensitive adhesiveness are used, it is only necessary to perform “setting” to the first two-sided adhesive sheet AT1 and the second two-sided adhesive sheet AT2. A suitable heating means such as a coil heater or a heating side of a heat pipe may be adhered by a suitable method. In addition, the first two-sided adhesive sheet AT1 and the second two-sided adhesive sheet AT2 like this may be a single layer or a multi-layered intermediate layer having only an adhesive layer, or may be a single layer or an intermediate layer without an intermediate layer. Stratified. The plate-like members include, for example, food, resin containers, semiconductor wafers (such as silicon semiconductor wafers and compound semiconductor wafers), circuit substrates, information recording substrates (such as optical discs), glass plates, steel plates, ceramics, wooden boards, and Resin plates, etc., and members or articles of arbitrary shapes can also be targeted. In addition, the first two-sided adhesive sheet AT1 and the second two-sided adhesive sheet AT2 can be converted into a functional and usable reading method, for example, a label for information recording, a decorative label, a protective sheet, a dicing tape, and a die attach. Any sheet, film, tape, etc. of any shape, such as a film, a die-bonding tape, and a recording layer forming a resin sheet, is attached to any of the plate-shaped members as described above.
The devices and processes in the present invention are not limited as long as the operations, functions, or processes described in the devices and processes can be achieved, and they are not limited to the structures of the single embodiment shown in the foregoing embodiments. Or works. For example, the first hard support is not limited as long as it is capable of attaching the first adhesive surface of the first two-sided adhesive sheet to the support surface, and comparing the technical common sense of the original application with the technical scope of the application. Explanation of other devices and processes is omitted).
In addition, the driving devices in the foregoing embodiments are electric machines, such as rotary motors, linear motion motors, linear motors, single-axis robot arms, multi-joint robot arms, air cylinders, hydraulic cylinders, rodless cylinders, and rotary cylinders. Actuators, etc., and these may be combined directly or indirectly (there are also duplicates as exemplified in the embodiment).
100‧‧‧薄型化晶圓之製造裝置100‧‧‧ thin wafer manufacturing equipment
111‧‧‧支撐面 111‧‧‧ support surface
AT1‧‧‧第1兩面黏著片 AT1‧‧‧The first two-sided adhesive sheet
110‧‧‧第1硬質支撐體 110‧‧‧The first hard support
WF1‧‧‧第1表面 WF1‧‧‧The first surface
AT12‧‧‧第2黏著面 AT12‧‧‧Second Adhesive Surface
WF‧‧‧晶圓 WF‧‧‧ Wafer
CR‧‧‧破裂層 CR‧‧‧ Rupture Layer
120‧‧‧邊界層形成裝置 120‧‧‧ boundary layer forming device
130‧‧‧下平台 130‧‧‧ under platform
140‧‧‧第1固定裝置 140‧‧‧ 1st fixture
151‧‧‧支撐面 151‧‧‧Support surface
AT2‧‧‧第2兩面黏著片 AT2‧‧‧Second Two Side Adhesive Sheet
AT21‧‧‧第1黏著面 AT21‧‧‧The first adhesive surface
150‧‧‧第2硬質支撐體 150‧‧‧ 2nd rigid support
WF2‧‧‧第2表面 WF2‧‧‧Second surface
160‧‧‧上平台 160‧‧‧on the platform
170‧‧‧第2固定裝置 170‧‧‧ 2nd fixture
WT1‧‧‧第1薄型化晶圓 WT1‧‧‧The first thin wafer
WT2‧‧‧第2薄型化晶圓 WT2‧‧‧Second Thin Wafer
180‧‧‧相對移動裝置 180‧‧‧ Relative mobile device
121‧‧‧雷射照射器 121‧‧‧laser irradiator
141‧‧‧下側減壓裝置 141‧‧‧Lower side pressure reducing device
142‧‧‧配管 142‧‧‧Piping
131‧‧‧保持面 131‧‧‧ keep face
171‧‧‧上側減壓裝置 171‧‧‧Upside pressure reducing device
161‧‧‧保持面 161‧‧‧ keep face
181‧‧‧轉動馬達 181‧‧‧Rotating motor
182‧‧‧輸出軸 182‧‧‧Output shaft
162‧‧‧延伸部 162‧‧‧ extension
AT11‧‧‧第1黏著面 AT11‧‧‧The first adhesive surface
LB‧‧‧雷射光 LB‧‧‧laser light
AT22‧‧‧第2黏著面 AT22‧‧‧Second Adhesive Surface
RP‧‧‧改質部 RP‧‧‧Modification Department
DP‧‧‧分割面 DP‧‧‧ split face
D‧‧‧間隔 D‧‧‧ interval
D1‧‧‧間隔 D1‧‧‧ interval
32‧‧‧雷射照射器 32‧‧‧laser irradiator
圖1A，係本發明之實施形態之薄型化晶圓之製造裝置的動作說明圖。FIG. 1A is an operation explanatory diagram of a thin wafer manufacturing apparatus according to an embodiment of the present invention.
圖1B，係前述實施形態之薄型化晶圓之製造裝置的動作說明圖，並表示接續圖1A的狀態。 FIG. 1B is an operation explanatory diagram of the thin wafer manufacturing apparatus of the embodiment, and shows a state continued from FIG. 1A.
圖1C，係前述實施形態之薄型化晶圓之製造裝置的動作說明圖，並表示接續圖1B的狀態。 FIG. 1C is an operation explanatory diagram of the thin wafer manufacturing apparatus of the embodiment, and shows a state continued from FIG.
圖2A，係前述實施形態之薄型化晶圓之製造裝置的動作說明圖，並表示接續圖1C的狀態。 FIG. 2A is an operation explanatory diagram of the thin wafer manufacturing apparatus of the embodiment, and shows a state continued from FIG. 1C.
圖2B，係前述實施形態之薄型化晶圓之製造裝置的動作說明圖，並表示接續圖2A的狀態。 FIG. 2B is an operation explanatory diagram of the thin wafer manufacturing apparatus of the embodiment, and shows a state continued from FIG. 2A.
圖3，係在本發明之實施形態的變形中，形成複數個改質部後之晶圓的縱剖面概略圖。 3 is a schematic longitudinal cross-sectional view of a wafer after forming a plurality of modified portions in a modification of the embodiment of the present invention.
圖4，係在前述變形中，形成複數個改質部後之晶圓的橫剖面概略圖。 FIG. 4 is a schematic cross-sectional view of a wafer after forming a plurality of modified portions in the aforementioned modification.
圖5，係在本發明之實施形態的其他變形中，形成複數個改質部後之晶圓的縱剖面概略圖。 FIG. 5 is a schematic longitudinal cross-sectional view of a wafer after forming a plurality of modified portions in another modification of the embodiment of the present invention.
圖6，係在前述其他變形中，形成複數個改質部後之晶圓的橫剖面概略圖。 FIG. 6 is a schematic cross-sectional view of a wafer after forming a plurality of modified portions in the other modification.
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| JP2017169776 | 2017-09-04 | ||
| JP2017-169776 | 2017-09-04 |
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| JP (1) | JP7231548B2 (en) |
| KR (1) | KR102565070B1 (en) |
| CN (1) | CN111052316A (en) |
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| TWI820938B (en) * | 2022-09-29 | 2023-11-01 | 強茂股份有限公司 | Die suction auxiliary device |
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| US20220270895A1 (en) * | 2019-07-10 | 2022-08-25 | Tokyo Electron Limited | Separating apparatus and separating method |
| WO2021193060A1 (en) * | 2020-03-24 | 2021-09-30 | リンテック株式会社 | Method for manufacturing thinned wafer and device for manufacturing thinned wafer |
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| JP2004055860A (en) * | 2002-07-22 | 2004-02-19 | Renesas Technology Corp | Semiconductor device fabricating process |
| JP2006142556A (en) * | 2004-11-17 | 2006-06-08 | Sharp Corp | Substrate manufacturing apparatus and substrate manufacturing method |
| JP6004338B2 (en) * | 2011-02-10 | 2016-10-05 | 信越ポリマー株式会社 | Single crystal substrate manufacturing method and internal modified layer forming single crystal member |
| JP6341639B2 (en) | 2013-08-01 | 2018-06-13 | 株式会社ディスコ | Processing equipment |
| JP2015119076A (en) | 2013-12-19 | 2015-06-25 | 信越ポリマー株式会社 | Internal processing layer formation single crystal member and manufacturing method therefor |
| JP2016035965A (en) * | 2014-08-01 | 2016-03-17 | リンテック株式会社 | Plate-like member dividing device and plate-like member dividing method |
| JP6506520B2 (en) * | 2014-09-16 | 2019-04-24 | 株式会社ディスコ | SiC slicing method |
| JP6562819B2 (en) * | 2015-11-12 | 2019-08-21 | 株式会社ディスコ | Method for separating SiC substrate |
| JP6673677B2 (en) * | 2015-12-01 | 2020-03-25 | 積水化学工業株式会社 | Double-sided adhesive tape for semiconductor processing |
| CN105436710B (en) * | 2015-12-30 | 2019-03-05 | 大族激光科技产业集团股份有限公司 | A kind of laser-stripping method of Silicon Wafer |
| TW201727814A (en) * | 2016-01-25 | 2017-08-01 | Lintec Corp | Dividing device for plate member and dividing method for plate member capable of accurately regulating thickness of plate member after dividing even for larger plate member |
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| TWI820938B (en) * | 2022-09-29 | 2023-11-01 | 強茂股份有限公司 | Die suction auxiliary device |
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| KR20200044001A (en) | 2020-04-28 |
| CN111052316A (en) | 2020-04-21 |
| KR102565070B1 (en) | 2023-08-08 |
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| TWI783029B (en) | 2022-11-11 |
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