JP7067904B2 - Manufacturing method of semiconductor device - Google Patents

Description

The present invention relates to a method for manufacturing a semiconductor device.

Conventionally, when a semiconductor wafer (hereinafter, also simply referred to as “wafer”) is fragmented to form a semiconductor chip (hereinafter, also simply referred to as “chip”), a semiconductor device using a sheet having good suitability in each process is manufactured. A method is known (see, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2007-88038

However, in the conventional method described in Patent Document 1, the dicing sheet 30 (adhesive sheet) used in the dicing step, which is the previous step, is a chip body together with the adhesive 32 (adhesive layer) after the dicing step. Since it is peeled off from 21 (semiconductor chip), in the step of attaching the second sheet (support member attaching step), the pickup sheet 40 (support member) having the adhesive 42 to be adhered to the semiconductor chip is prepared for the subsequent pickup step. ) Becomes an indispensable requirement, which causes the inconvenience that the degree of freedom in the manufacturing process of the semiconductor device is reduced.

An object of the present invention is to provide a method for manufacturing a semiconductor device, which can prevent a decrease in the degree of freedom in the manufacturing process of the semiconductor device.

The present invention has adopted the configuration described in the claims.

According to the present invention, the base material is separated from the adhesive sheet used by being attached to the wafer in the previous step, leaving the adhesive layer on the wafer. Therefore, in the support member attaching step, the support having the adhesive layer is provided. It is not an indispensable requirement to select a member, and it is possible to prevent the degree of freedom in the manufacturing process of the semiconductor device from being reduced.

The explanatory view of the manufacturing method of the semiconductor device which concerns on embodiment of this invention. The explanatory view of the manufacturing method of the semiconductor device which concerns on the modification of this invention. The explanatory view of the manufacturing method of the semiconductor device which concerns on the modification of this invention. The explanatory view of the manufacturing method of the semiconductor device which concerns on the modification of this invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
The X-axis, Y-axis, and Z-axis in the present embodiment are orthogonal to each other, the X-axis and the Y-axis are axes in a predetermined plane, and the Z-axis is an axis orthogonal to the predetermined plane. do. Further, in the present embodiment, "up" is "down" in the direction of the arrow on the Z axis when the direction is shown without specifying the figure, based on the case of viewing from the front direction in FIG. 1 parallel to the Y axis. Is the opposite direction, "left" is the arrow direction of the X axis, "right" is the opposite direction, "front" is the middle front direction parallel to the Y axis, and "rear" is the opposite direction. Further, since FIGS. 1 to 4 are views viewed from the same direction as that shown in (A) of each figure, arrows indicating directions other than (A) in each figure are omitted.

In the method for manufacturing a semiconductor device of the present invention, an adhesive sheet AS in which an adhesive layer AL is laminated on a base material BS containing an expandable fine particle SG that expands by being applied with infrared rays as a predetermined first energy is provided on a wafer. A sheet pasting step PC1 to be pasted on one surface of the WF, and a modified layer forming step PC2 to form a modified layer ML on the wafer WF in which the wafer WF is individualized by applying an external force to the wafer WF. The adhesive region reducing step PC3, which applies infrared rays to the base material BS to expand the expandable fine particles SG and reduces the adhesive region of the base material BS with respect to the adhesive layer AL, and the adhesive layer AL and the base material BS The separation step PC4 for separating, the support member sticking step PC5 for sticking the resin sheet RS as a support member to the adhesive layer AL on which the base material BS is separated, and the wafer WF by applying an external force to the wafer WF. It has an individualizing step PC6 for forming a chip CP, a removing step PC7 for removing the chip CP from the resin sheet RS, and a chip bonding step PC8 for adhering the chip CP to the substrate CB.

As shown in FIG. 1A, the sheet attaching step PC1 presses the adhesive sheet AS against one surface of the wafer WF with the pressing roller 11 as the pressing means and attaches the adhesive sheet AS. The adhesive sheet AS is attached to the wafer WF by moving one of the pressing roller 11 and the wafer WF while restricting the movement of the other, or moving both of them. The wafer WF may have a predetermined circuit formed on one surface and at least one of the other surfaces, and the adhesive sheet AS may be attached to the surface on which the predetermined circuit is formed in such a wafer WF. However, it may be attached to a surface on which a predetermined circuit is not formed.
In the case of the present embodiment, the base material BS constituting the adhesive sheet AS is thick enough to prevent the energy of the laser used in the modified layer forming step PC2 from penetrating, or the wafer WF moves during or after laser irradiation. Those suitable for the modified layer forming step PC2, such as those having high rigidity so as not to be deformed or deformed, are adopted.

As shown in FIG. 1B, the modified layer forming step PC2 forms a plurality of modified layer MLs inside the wafer WF with the laser irradiator 21 as the modified layer forming means. In the modified layer ML, the movement of one of the laser irradiator 21 and the wafer WF is restricted and the other is moved, or both of them are moved, and the X-axis and Y are moved in the state of FIG. 1 (B). It is formed in a grid pattern parallel to each axis (modified layer ML parallel to the X axis is not shown).

As shown in FIG. 1C, the adhesive region reducing step PC3 emits infrared rays from the light emitting source 31 as the first energy applying means, and applies infrared rays to the base material BS of the adhesive sheet AS attached to the wafer WF. By doing so, the expandable fine particles SG contained in the base material BS are expanded. Infrared rays are applied to the base material BS in a state where the movement of one of the light emitting source 31 and the wafer WF is restricted and the other is moved, or both of them are moved, or both of them are restricted.
In the base material BS, when the expandable fine particles SG expand, innumerable convex portions CV are formed as shown in the figure with AA in FIG. 1 (C), and air enters from the interface with the adhesive layer AL. As a result, a space CR is formed between the adhesive layer AL and the adhesive layer AL, and the adhesive region with respect to the adhesive layer AL is reduced. Then, when the space CR spreads over the entire area between the base material BS and the adhesive layer AL, the base material BS has a significantly reduced adhesive region with respect to the adhesive layer AL and can be easily removed from the adhesive layer AL. .. The adhesive layer AL that has undergone such a phenomenon has only a reduced adhesive region with the base material BS, and its adhesive strength does not decrease, and the adhesive strength after the base material BS is peeled off is the basis. The adhesive strength before peeling the material BS is maintained at the same level.

In the separation step PC4, as shown in FIG. 1D, the peeling sheet PT as a holding means is attached to the base material BS of the adhesive sheet AS attached to the wafer WF by the peeling roller 41 as the peeling means. The adhesive layer AL and the base material BS are separated by collecting the peeling sheet PT. The base material BS is separated from the adhesive layer AL by moving one of the peeling sheet PT and the wafer WF while restricting the movement of the other, or moving both of them.

As shown in FIG. 1 (E), the support member attaching step PC5 presses the resin sheet RS against the adhesive layer AL with the pressing roller 51 as the pressing means and attaches the resin sheet RS. The resin sheet RS is attached to the adhesive layer AL by moving one of the pressing roller 51 and the wafer WF while restricting the movement of the other, or moving both of them. At this time, the resin sheet RS used is set so that the adhesive force with respect to the adhesive layer AL is larger than the adhesive force between the chip CP and the adhesive layer AL. Specifically, the resin sheet RS has a roughened surface that comes into contact with the adhesive layer AL, or an easy-adhesive PET that has been subjected to, for example, an easy-adhesive treatment so that the adhesive layer AL can be adhered well. Etc. are used. Further, the resin sheet RS may have an adhesive layer or may not have an adhesive layer. Further, as the resin sheet RS, one suitable for the removal process PC7, such as one having a smaller thickness than the base material BS and one having a lower rigidity than the base material BS, is adopted.

As shown in FIG. 1 (F), the individualization step PC6 applies an external force to the wafer WF by applying tension to the resin sheet RS, and divides the wafer WF at the position of the modified layer ML. It is fragmented to form a chip CP. At this time, the adhesive layer AL located between the chip CPs is divided together with the chip CP being divided, but if the adhesive layer AL is not divided, it may be divided by a cutting means such as a laser beam or a cutter blade. good.

In the removal step PC7, as shown in FIG. 1 (G), the tip CP is pushed up by the push-up member 71 via the resin sheet RS, the pushed-up tip CP is sucked and held by the suction pad 72 as a holding means, and the tip CP is held. Remove from the resin sheet RS. At this time, the chip CP is separated from the adhesive layer AL and removed from the resin sheet RS.
In this removal process PC7, when the resin sheet RS supporting the chip CP has a large thickness or high rigidity like the base material BS suitable for the modified layer forming process PC2, the chip CP is pushed up by the push-up member 71. At that time, the amount of push-up of the chip CP is insufficient to hold the suction on the suction pad 72, or the adjacent chip CP is also pushed up at the same time to damage the adjacent chip CP. On the other hand, by replacing the resin sheet RS with one suitable for the removal step PC7 as in the present embodiment, such inconvenience can be prevented in advance.

As shown in FIG. 1H, the chip bonding step PC8 adheres the chip CP adsorbed and held by the adsorption pad 72 to the substrate CB. At this time, the chip CP is adhered to the substrate CB via the substrate adhesive layer AD to be adhered to the substrate CB. Such a substrate adhesive layer AD may be laminated on the chip CP while being adsorbed and held by the adsorption pad 72 and conveyed, or may be laminated on the substrate CB in advance.

According to the above embodiment, with respect to the adhesive sheet AS used by being attached to the wafer WF in the modified layer forming step PC2, which is the previous step, the adhesive layer AL is left on the wafer WF and the base material BS is used. Therefore, in the support member attaching process PC5, it is not an indispensable requirement to select the resin sheet RS having an adhesive layer, and it is possible to prevent the degree of freedom in the manufacturing process of the semiconductor device from being lowered. can.

In addition, the adhesive layer AL constituting the adhesive sheet AS shown in the above embodiment is supported by the separation step PC4 by adopting a layer in which the adhesive strength is reduced by applying ultraviolet rays as a predetermined second energy. The adhesive strength lowering step PC9 may be carried out by applying ultraviolet rays to the adhesive layer AL with the member attaching step PC5 to reduce the adhesive strength of the adhesive layer AL.
As shown in FIG. 1 (I), the adhesive strength reducing step PC9 emits ultraviolet rays from the light emitting source 91 as the second energy applying means, and the ultraviolet rays are applied to the adhesive layer AL of the adhesive sheet AS attached to the wafer WF. By applying the above, the photopolymerization initiator contained in the adhesive layer AL is subjected to a photopolymerization reaction to reduce the adhesive strength. The ultraviolet rays are applied to the wafer WF in a state where the movement of one of the light emitting source 91 and the wafer WF is restricted and the other is moved, or both of them are moved, or the movement of both of them is restricted. As a result, the adhesive force of the adhesive layer AL to the chip CP is reduced, and the chip CP can be easily removed from the adhesive layer AL.
The light emitting source 91 can transmit the second energy to the adhesive layer AL by passing through the wafer WF depending on the type, characteristic, characteristic or property of the second energy.

Further, in the support member attaching step PC5, the resin sheet RS may be set so that the adhesive force with respect to the adhesive layer AL is smaller than the adhesive force between the chip CP and the adhesive layer AL. .. Specifically, the resin sheet RS has holes or protrusions formed so that the number of surfaces in contact with the adhesive layer AL is reduced, or the adhesive layer AL cannot adhere well, for example, a small amount of silicone. Those laminated on the surface are used. In this case, the sheet pasting step PC1, the modified layer forming step PC2, the adhesive region reducing step PC3 and the separation step PC4 shown in FIGS. 1 (A) to 1 (D) are carried out, and the support member pasting step shown in FIG. 1 (E) is carried out. In PC5, a resin sheet RS is used in which the adhesive force to the adhesive layer AL is set to be smaller than the adhesive force between the chip CP and the adhesive layer AL. Next, after the individualization step PC6 shown in FIG. 1F is carried out, as shown in FIG. 2A, in the removal step PC7, the tip CP is pushed up by the push-up member 71, and the pushed-up tip CP is adsorbed. The chip CP is removed from the resin sheet RS by sucking and holding it with the pad 72. At this time, the chip CP is removed from the resin sheet RS together with the adhesive layer AL. Then, as shown in FIG. 2B, in the chip bonding step PC8, the chip CP is bonded to the substrate CB via the adhesive layer AL. At this time, the chip CP and the adhesive layer AL may be adhered to the substrate CB via the substrate adhesive layer AD (not shown) as in the above embodiment, and such a substrate adhesive layer AD may be adhered to the substrate CB. May be laminated on the adhesive layer AL while being sucked, held and conveyed by the suction pad 72, or may be laminated on the substrate CB in advance.

Further, as shown in FIG. 3 (A), in the modified layer forming step PC2, a modified layer ML that does not reach from one surface side to the other surface is formed, and as shown in FIG. 3 (B). In the individualization step PC6, the wafer WF is ground from the other surface side of the wafer WF until it reaches the modified layer ML by the grinding means 61 such as a grinder or a cutting member, and the wafer WF is individualized to form a chip CP. You may. At this time, an external force is applied to the wafer WF due to the vibration of the grinding means 61, and the wafer WF is fragmented to form a chip CP.

Further, as shown in FIG. 4A, in the sheet attaching step PC1, the adhesive sheet AS for which the adhesive layer AD for the substrate to be adhered to the substrate CB is laminated on the adhesive layer AL is attached to the adhesive layer for the substrate. It may be attached to one surface of the wafer WF via AD. In this case, as shown in FIGS. 4 (B) to 4 (F), the modified layer forming step PC2, the adhesive region reducing step PC3, the separating step PC4, the support member attaching step PC5 and the individualizing step PC6 are carried out, and then the individualizing step PC6 is carried out. As shown in FIG. 4 (G), in the removal step PC7, the chip CP is removed from the resin sheet RS together with the adhesive layer AD for the substrate. Next, as shown in FIG. 4H, in the chip bonding step PC8, the chip CP is bonded to the substrate CB via the substrate adhesive layer AD.
In this case as well, a material whose adhesive strength is reduced by applying ultraviolet rays as a predetermined second energy to the adhesive layer AL is adopted, and the adhesive strength is reduced between the separation step PC4 and the support member attaching step PC5. The process PC9 may be carried out. As a result, the adhesive force of the adhesive layer AL with respect to the adhesive layer AD for the substrate is lowered, and the chip CP can be easily removed from the resin sheet RS together with the adhesive layer AD for the substrate.
Depending on the type, characteristic, characteristic or property of the second energy, the light emitting source 91 can permeate the wafer WF and the adhesive layer AD for the substrate to impart the second energy to the adhesive layer AL.

The means and processes in the present invention are not limited as long as they can perform the operations, functions or processes described for the means and processes, much less the constituents of the mere embodiment shown in the above-described embodiment. It is not limited to the process at all. For example, the sheet attaching step is a step of attaching an adhesive sheet in which an adhesive layer is laminated on a base material containing expandable fine particles that expands when a predetermined first energy is applied, on one surface of a semiconductor wafer. If there is, there is no limitation as long as it is within the technical scope in light of the common technical knowledge at the time of filing (the same applies to other means and processes).

The sheet pasting process PC1 is a drive device and is supported by the output shaft of a linear motor as a pressing means, and the adhesive sheet AS is adsorbed by a holding member capable of holding the adhesive sheet AS by a decompression means such as a decompression pump or a vacuum ejector. The adhesive sheet AS that is held and held by the holding member may be pressed and attached to the wafer WF.

The modified layer forming step PC2 may form one modified layer ML parallel to the X axis, may form one modified layer ML parallel to the Y axis, or may form one modified layer ML. One or more modified layer MLs that are not parallel to the Y-axis may be formed, or one or more modified layer MLs that are not parallel to the Y-axis may be formed, or modifications that are not evenly spaced from each other. Layer MLs may be formed, modified layers MLs that are parallel or non-parallel to each other may be formed, multiple modified layer MLs that do not intersect each other may be formed, or orthogonal to each other or Multiple modified layer MLs that cross each other may be formed, or one or more modified layer MLs having a curved or folded line may be formed, and they are formed by such modified layer MLs. The shape of the chip CP may be any shape such as a circle, an ellipse, a triangle, or a polygon more than a quadrangle.
The modified layer forming means changes the characteristics, characteristics, properties, materials, composition, composition, dimensions, etc. of the wafer WF by applying laser light, electromagnetic waves, vibration, heat, chemicals, chemical substances, and the like. Any modified layer ML may be formed as long as the wafer is individualized by weakening, crushing, liquefying or hollowing the wafer and applying an external force directly or indirectly to the wafer WF.

In the adhesion region reduction step PC3, infrared rays may be partially applied to the base material BS by the light emitting source 31, and the light emitting source 31 and the wafer WF may be relatively moved to apply infrared rays to the entire base material BS. Infrared rays may be applied to the entire base material BS at once, and the time for irradiating the base material BS with infrared rays is arbitrary in consideration of the characteristics, characteristics, properties, materials, composition, composition, etc. of the base material BS. It can be determined, and as the predetermined first energy, in addition to infrared rays, electromagnetic rays such as ultraviolet rays, visible rays, sound waves, X-rays or gamma rays, or heat such as hot water or hot air may be applied, and the base material BS may be used. It can be arbitrarily determined in consideration of the characteristics, characteristics, properties, materials, composition, composition, etc. of the As the light emitting source 31, an LED (Light Emitting Diode) lamp, a high-pressure mercury lamp, a low-pressure mercury lamp, a metal halide lamp, a xenon lamp, a halogen lamp, or the like may be adopted, and any of them may be adopted as appropriate. You may adopt the combination with.

The separation step PC4 may employ a strip-shaped or single-wafer peeling sheet PT as a holding means, or is supported by an output shaft of a linear motion motor as a drive device, and is supported by a decompression means such as a decompression pump or a vacuum ejector. Any configuration may be used, such as a structure in which the base material BS is adsorbed and held by a holding member capable of holding the base material BS, and the base material BS held by the holding member is separated from the adhesive layer AL and separated.

The support member attaching process PC5 is a sheet holding member that is a drive device and is supported by the output shaft of a linear motor as a pressing means, and can hold the resin sheet RS by a decompression means such as a decompression pump or a vacuum ejector. Any configuration may be used, such as a configuration in which the resin sheet RS held by the holding member is pressed against the adhesive layer AL and attached, or a frame member such as a ring frame is attached to the outer edge of the resin sheet RS. However, such a frame member may be annular or non-annular.

The individualization step PC6 applies tension to the resin sheet RS only in the front-rear direction, only in the left-right direction, only in the front-back and left-right directions, in the front-back, left-right and other directions, or in the radial direction, and individualizes the wafer WF to form a chip CP. It may be formed, or the frame member attached to the outer edge of the resin sheet RS is held by the holding member, the frame member is separated from the wafer WF to apply tension to the resin sheet RS, and the wafer WF is individualized. The chip CP may be formed, and the external force applied to the wafer WF may be any force such as pressing force, tension, pressure, bending force, and vibration.

In the removal step PC7, the chip CPs may be removed one by one or a plurality of chips CP from the resin sheet RS.

The chip bonding step PC8 may bond the chip CPs one by one or a plurality of chips CP to the substrate CB.

In the adhesive force lowering step PC9, ultraviolet rays may be partially applied to the adhesive layer AL by the light emitting source 91, and the light emitting source 91 and the wafer WF may be relatively moved to apply ultraviolet rays to the entire adhesive layer AL. However, ultraviolet rays may be applied to the entire adhesive layer AL at once, and the time for irradiating the adhesive layer AL with ultraviolet rays is determined by the characteristics, characteristics, properties, materials, composition, composition, etc. of the adhesive layer AL. It can be arbitrarily determined in consideration of it, and as a predetermined second energy, in addition to ultraviolet rays, electromagnetic rays such as infrared rays, visible rays, sound waves, X-rays or gamma rays, or heat such as hot water or hot air may be applied. Well, it can be arbitrarily determined in consideration of the characteristics, characteristics, properties, materials, composition, composition, etc. of the adhesive layer AL, and a light collecting plate or collection that concentrates the second energy on the adhesive layer AL. A concentrating means such as a plate may be adopted, or an LED (Light Emitting Diode) lamp, a high-pressure mercury lamp, a low-pressure mercury lamp, a metal halide lamp, a xenon lamp, a halogen lamp, or the like may be adopted as the light emitting source 81. Alternatively, an appropriate combination thereof may be adopted, and the adhesive layer AL used in such an adhesive force reducing step PC9 has ultraviolet rays and visible rays as a predetermined second energy in addition to ultraviolet rays. Anything that reduces the adhesive strength by applying electromagnetic rays such as light rays, ultrasonic rays, X-rays or gamma rays, heat such as hot water or hot air, etc. may be used, and the characteristics and characteristics of such an adhesive layer AL, The second energy applying means may be selected according to the properties, materials, composition, composition and the like.

As the base material BS, for example, the heat-expandable base material 11 of the pressure-sensitive adhesive sheet 1a disclosed in Japanese Patent Application No. 2017-73236 can be exemplified. The pressure-sensitive adhesive sheet 1a expands the heat-expandable fine particles (expandable fine particles SG) of the heat-expandable base material 11 by applying heat as a predetermined first energy, and innumerable on the surface of the pressure-sensitive adhesive layer 12. A convex portion is formed so that an adherend such as a semiconductor chip 51 can be easily removed from the adhesive layer 12, but the adhesive strength between the thermally expandable base material 11 and the adhesive layer 12 is appropriately changed. When the heat-expandable fine particles of the heat-expandable base material 11 are expanded, the adhesive region between the heat-expandable base material 11 and the adhesive layer 12 is remarkably reduced by innumerable convex portions. It can be AS.
The base material BS is an expandable fine particle that expands when electromagnetic waves such as ultraviolet rays, visible rays, sound waves, X-rays or gamma rays, heat such as hot water or hot air are applied as predetermined first energy. Anything containing SG may be used, and the first energy applying means may be selected according to the characteristics, characteristics, properties, materials, composition, composition, and the like of such a base material BS.
In addition to the resin sheet BS2, the support member may be, for example, an elastic member such as rubber or resin, an inelastic member such as glass, metal, or ceramic, or other materials such as wood, paper, and cloth. Alternatively, it may have an adhesive layer such as an adhesive sheet or an adhesive sheet, or may not have an adhesive layer or an adhesive layer, and its shape is not plate-shaped and is limited to, for example, spherical or prismatic. If the support member is curved and does not stretch even if tension is applied, an external force may be applied to the wafer WF and the wafer WF may be individualized to form a chip CP. ..

The materials, types, shapes, etc. of the adhesive sheet AS, the resin sheet RS, and the wafer WF in the present invention are not particularly limited. For example, the adhesive sheet AS, the resin sheet RS, and the wafer WF may have a circular shape, an elliptical shape, a polygonal shape such as a triangle or a quadrangle, or any other shape. Further, the wafer WF may be a semiconductor wafer such as a silicone semiconductor wafer or a compound semiconductor wafer. The adhesive sheet AS and the resin sheet RS can be read in a functional and versatile manner, for example, an information description label, a decorative label, a protective sheet, a dicing tape, a die attach film, a die bonding tape, and a recording layer forming resin. Any sheet such as a sheet, a film, a tape, or the like may be used.

The drive device in the above embodiment is an electric device such as a rotary motor, a linear motor, a linear motor, a single-axis robot, an articulated robot having two-axis or three-axis or more joints, an air cylinder, a hydraulic cylinder, and a rodless. Actuators such as cylinders and rotary cylinders can be adopted, and those in which they are directly or indirectly combined can also be adopted.
In the above embodiment, when a rotating member such as a roller is adopted, a driving device for rotationally driving the rotating member may be provided, or the surface of the rotating member or the rotating member itself can be deformed by rubber, resin, or the like. It may be composed of a member, a member that does not deform the surface of the rotating member or the rotating member itself, or a pressing means such as a pressing roller or a pressing head or a member that presses a pressed object such as a pressing member. If adopted, instead of or in combination with those exemplified above, members such as rollers, round bars, blade materials, rubber, resin, sponge, etc. may be adopted, or pressed by spraying gas such as air or gas. The material to be pressed may be made of a deformable member such as rubber or resin, or may be made of a non-deformable member, such as a release plate or a release roller. When a material that peels off an object to be peeled off, such as a peeling means or a peeling member, is used, a member such as a plate-shaped member, a round bar, or a roller may be used in place of or in combination with the above-exemplified one. Alternatively, the material to be peeled off may be made of a deformable member such as rubber or resin, or may be made of a non-deformable member, or may be supported by a support (holding) means, a support (holding) member, or the like. When a member that supports or holds a member is used, gripping means such as a mechanical chuck or chuck cylinder, Coulomb force, adhesive (adhesive sheet, adhesive tape), adhesive (adhesive sheet, adhesive tape), magnetic force, Bernoulli A configuration in which the supported member is supported (held) by suction, suction suction, a driving device, or the like may be adopted.

AD ... Adhesive layer for substrate AL ... Adhesive layer AS ... Adhesive sheet BS ... Base material CB ... Substrate CP ... Semiconductor chip ML ... Modified layer PC1 ... Sheet pasting process PC2 ... Modified layer forming process PC3 ... Adhesive area reduction process PC4 ... Separation process PC5 ... Support member attachment process PC6 ... Individualization process PC7 ... Removal process PC8 ... Chip bonding process PC9 ... Adhesive strength reduction process RS ... Resin sheet (support member)
SG ... Expandable fine particles WF ... Semiconductor wafer

Claims (5)

A sheet preparation step of preparing an adhesive sheet in which an adhesive layer is laminated on a single-layer base material containing expandable fine particles that expand when a predetermined first energy is applied.
A sheet attaching step in which the adhesive layer is brought into contact with the semiconductor wafer and the adhesive sheet is attached to one surface of the semiconductor wafer.
A modified layer forming step of forming a modified layer on the semiconductor wafer in which the semiconductor wafer is fragmented by applying an external force to the semiconductor wafer.
An adhesive region reducing step of applying the predetermined first energy to the substrate to expand the expandable fine particles and reducing the adhesive region of the substrate with respect to the adhesive layer.
A separation step of separating the base material from the adhesive layer in a single layer state ,
A support member sticking step of sticking a support member to the adhesive layer separated and exposed in the separation step, and a support member sticking step.
An individualization step of applying an external force to the semiconductor wafer to individualize the semiconductor wafer to form a semiconductor chip.
The removal step of removing the semiconductor chip from the support member,
A method for manufacturing a semiconductor device, comprising a chip bonding step of bonding the semiconductor chip to a substrate. In the support member attaching step, the support member used is set so that the adhesive force to the adhesive layer is larger than the adhesive force between the semiconductor chip and the adhesive layer.
In the removal step, the semiconductor chip is separated from the adhesive layer and removed from the support member.
The method for manufacturing a semiconductor device according to claim 1, wherein in the chip bonding step, the semiconductor chip is bonded to the substrate via an adhesive layer for a substrate to be bonded to the substrate. The adhesive layer is configured such that the adhesive force is reduced by applying a predetermined second energy to the adhesive layer, and the predetermined second is applied to the adhesive layer between the separation step and the support member attaching step. The method for manufacturing a semiconductor device according to claim 1 or 2, further comprising an adhesive force lowering step of applying energy to lower the adhesive force of the adhesive layer. In the support member attaching step, the support member used is set so that the adhesive force to the adhesive layer is smaller than the adhesive force between the semiconductor chip and the adhesive layer.
In the removal step, the semiconductor chip is removed from the support member together with the adhesive layer.
The method for manufacturing a semiconductor device according to claim 1, wherein in the chip bonding step, the semiconductor chip is bonded to the substrate via the adhesive layer. In the sheet preparation step, the adhesive sheet in which the adhesive layer for a substrate to be adhered to the substrate is laminated on the adhesive layer is prepared.
In the sheet attaching step, the adhesive layer for the substrate is brought into contact with the semiconductor wafer, and the adhesive sheet is attached to one surface of the semiconductor wafer.
In the removal step, the semiconductor chip is removed from the support member together with the adhesive layer for the substrate.
The method for manufacturing a semiconductor device according to claim 1, wherein in the chip bonding step, the semiconductor chip is bonded to the substrate via the substrate adhesive layer.

Images