JP7206418B2 - 配線基体、半導体素子収納用パッケージ、および半導体装置 - Google Patents

配線基体、半導体素子収納用パッケージ、および半導体装置 Download PDF

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Publication number
JP7206418B2
JP7206418B2 JP2021561560A JP2021561560A JP7206418B2 JP 7206418 B2 JP7206418 B2 JP 7206418B2 JP 2021561560 A JP2021561560 A JP 2021561560A JP 2021561560 A JP2021561560 A JP 2021561560A JP 7206418 B2 JP7206418 B2 JP 7206418B2
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Prior art keywords
lead terminal
wiring substrate
metal layer
view
semiconductor element
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Japanese (ja)
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JPWO2021107114A1 (https=
Inventor
誠 山本
純一 皆越
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/93Interconnections
    • H10F77/933Interconnections for devices having potential barriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02315Support members, e.g. bases or carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02355Fixing laser chips on mounts
    • H01S5/0237Fixing laser chips on mounts by soldering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/50Encapsulations or containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10Containers or parts thereof
    • H10W76/12Containers or parts thereof characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10Containers or parts thereof
    • H10W76/12Containers or parts thereof characterised by their shape
    • H10W76/13Containers comprising a conductive base serving as an interconnection
    • H10W76/134Containers comprising a conductive base serving as an interconnection having other interconnections parallel to the conductive base
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60Seals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/1301Stabilisation of laser output parameters, e.g. frequency or amplitude in optical amplifiers
    • H01S3/13017Stabilisation of laser output parameters, e.g. frequency or amplitude in optical amplifiers by controlling the temperature of the active medium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • H01S5/02216Butterfly-type, i.e. with electrode pins extending horizontally from the housings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02251Out-coupling of light using optical fibres
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5445Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
JP2021561560A 2019-11-28 2020-11-27 配線基体、半導体素子収納用パッケージ、および半導体装置 Active JP7206418B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019215439 2019-11-28
JP2019215439 2019-11-28
PCT/JP2020/044276 WO2021107114A1 (ja) 2019-11-28 2020-11-27 配線基体、半導体素子収納用パッケージ、および半導体装置

Publications (2)

Publication Number Publication Date
JPWO2021107114A1 JPWO2021107114A1 (https=) 2021-06-03
JP7206418B2 true JP7206418B2 (ja) 2023-01-17

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JP2021561560A Active JP7206418B2 (ja) 2019-11-28 2020-11-27 配線基体、半導体素子収納用パッケージ、および半導体装置

Country Status (4)

Country Link
US (1) US12199194B2 (https=)
JP (1) JP7206418B2 (https=)
CN (1) CN114730741A (https=)
WO (1) WO2021107114A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017609A (ja) 2001-06-29 2003-01-17 Kyocera Corp 半導体素子収納用パッケージおよび半導体装置
JP2015060815A (ja) 2013-09-20 2015-03-30 第一精工株式会社 電気コネクタの接合部材およびその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0749732Y2 (ja) 1987-12-28 1995-11-13 ティアツク株式会社 半田付け実装部品のリ−ド
JPH01164673U (https=) * 1988-05-07 1989-11-16
JP3623686B2 (ja) * 1999-03-24 2005-02-23 京セラ株式会社 配線基板の製造方法
JP4174823B2 (ja) * 2003-03-27 2008-11-05 サンケン電気株式会社 半導体発光装置
US7622796B2 (en) * 2005-09-13 2009-11-24 Alpha And Omega Semiconductor Limited Semiconductor package having a bridged plate interconnection
CN107112308B (zh) * 2014-11-27 2019-06-14 新电元工业株式会社 引线框、半导体装置、引线框的制造方法、以及半导体装置的制造方法
EP3300104B1 (en) * 2015-05-20 2026-01-21 Kyocera Corporation Semiconductor element package, semiconductor device, and mounting structure
WO2018003332A1 (ja) * 2016-06-27 2018-01-04 Ngkエレクトロデバイス株式会社 高周波用セラミックス基板および高周波用半導体素子収納パッケージ
US20180166369A1 (en) * 2016-12-14 2018-06-14 Texas Instruments Incorporated Bi-Layer Nanoparticle Adhesion Film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017609A (ja) 2001-06-29 2003-01-17 Kyocera Corp 半導体素子収納用パッケージおよび半導体装置
JP2015060815A (ja) 2013-09-20 2015-03-30 第一精工株式会社 電気コネクタの接合部材およびその製造方法

Also Published As

Publication number Publication date
WO2021107114A1 (ja) 2021-06-03
US20230009571A1 (en) 2023-01-12
JPWO2021107114A1 (https=) 2021-06-03
CN114730741A (zh) 2022-07-08
US12199194B2 (en) 2025-01-14

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