CN114730741A - 布线基体、半导体元件容纳用封装件及半导体装置 - Google Patents

布线基体、半导体元件容纳用封装件及半导体装置 Download PDF

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Publication number
CN114730741A
CN114730741A CN202080080364.9A CN202080080364A CN114730741A CN 114730741 A CN114730741 A CN 114730741A CN 202080080364 A CN202080080364 A CN 202080080364A CN 114730741 A CN114730741 A CN 114730741A
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China
Prior art keywords
lead terminal
metal layer
wiring substrate
view
bonding material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080080364.9A
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English (en)
Chinese (zh)
Inventor
山本诚
皆越纯一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
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Kyocera Corp
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Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Publication of CN114730741A publication Critical patent/CN114730741A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/134—Containers comprising a conductive base serving as an interconnection having other interconnections parallel to the conductive base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60—Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/1301—Stabilisation of laser output parameters, e.g. frequency or amplitude in optical amplifiers
    • H01S3/13017—Stabilisation of laser output parameters, e.g. frequency or amplitude in optical amplifiers by controlling the temperature of the active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
CN202080080364.9A 2019-11-28 2020-11-27 布线基体、半导体元件容纳用封装件及半导体装置 Pending CN114730741A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-215439 2019-11-28
JP2019215439 2019-11-28
PCT/JP2020/044276 WO2021107114A1 (ja) 2019-11-28 2020-11-27 配線基体、半導体素子収納用パッケージ、および半導体装置

Publications (1)

Publication Number Publication Date
CN114730741A true CN114730741A (zh) 2022-07-08

Family

ID=76129587

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080080364.9A Pending CN114730741A (zh) 2019-11-28 2020-11-27 布线基体、半导体元件容纳用封装件及半导体装置

Country Status (4)

Country Link
US (1) US12199194B2 (https=)
JP (1) JP7206418B2 (https=)
CN (1) CN114730741A (https=)
WO (1) WO2021107114A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277653A (ja) * 1999-03-24 2000-10-06 Kyocera Corp 配線基板の製造方法
JP2003017609A (ja) * 2001-06-29 2003-01-17 Kyocera Corp 半導体素子収納用パッケージおよび半導体装置
CN107112308A (zh) * 2014-11-27 2017-08-29 新电元工业株式会社 引线框、半导体装置、引线框的制造方法、以及半导体装置的制造方法
CN107534023A (zh) * 2015-05-20 2018-01-02 京瓷株式会社 半导体元件封装件、半导体装置以及安装构造体
US20180166369A1 (en) * 2016-12-14 2018-06-14 Texas Instruments Incorporated Bi-Layer Nanoparticle Adhesion Film

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0749732Y2 (ja) 1987-12-28 1995-11-13 ティアツク株式会社 半田付け実装部品のリ−ド
JPH01164673U (https=) * 1988-05-07 1989-11-16
JP4174823B2 (ja) * 2003-03-27 2008-11-05 サンケン電気株式会社 半導体発光装置
US7622796B2 (en) * 2005-09-13 2009-11-24 Alpha And Omega Semiconductor Limited Semiconductor package having a bridged plate interconnection
JP5614484B1 (ja) * 2013-09-20 2014-10-29 第一精工株式会社 電気コネクタの接合部材およびその製造方法
WO2018003332A1 (ja) * 2016-06-27 2018-01-04 Ｎｇｋエレクトロデバイス株式会社 高周波用セラミックス基板および高周波用半導体素子収納パッケージ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277653A (ja) * 1999-03-24 2000-10-06 Kyocera Corp 配線基板の製造方法
JP2003017609A (ja) * 2001-06-29 2003-01-17 Kyocera Corp 半導体素子収納用パッケージおよび半導体装置
CN107112308A (zh) * 2014-11-27 2017-08-29 新电元工业株式会社 引线框、半导体装置、引线框的制造方法、以及半导体装置的制造方法
CN107534023A (zh) * 2015-05-20 2018-01-02 京瓷株式会社 半导体元件封装件、半导体装置以及安装构造体
US20180166369A1 (en) * 2016-12-14 2018-06-14 Texas Instruments Incorporated Bi-Layer Nanoparticle Adhesion Film

Also Published As

Publication number Publication date
JP7206418B2 (ja) 2023-01-17
WO2021107114A1 (ja) 2021-06-03
US20230009571A1 (en) 2023-01-12
JPWO2021107114A1 (https=) 2021-06-03
US12199194B2 (en) 2025-01-14

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