JP7205107B2 - 3d構造、3d構造を製造する方法、および流体吐出装置 - Google Patents
3d構造、3d構造を製造する方法、および流体吐出装置 Download PDFInfo
- Publication number
- JP7205107B2 JP7205107B2 JP2018153451A JP2018153451A JP7205107B2 JP 7205107 B2 JP7205107 B2 JP 7205107B2 JP 2018153451 A JP2018153451 A JP 2018153451A JP 2018153451 A JP2018153451 A JP 2018153451A JP 7205107 B2 JP7205107 B2 JP 7205107B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoresist layer
- composite film
- line
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000012530 fluid Substances 0.000 title claims description 101
- 238000000034 method Methods 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000010410 layer Substances 0.000 claims description 236
- 229920002120 photoresistant polymer Polymers 0.000 claims description 109
- 239000002131 composite material Substances 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 32
- 239000003795 chemical substances by application Substances 0.000 claims description 26
- 230000005855 radiation Effects 0.000 claims description 25
- 230000001737 promoting effect Effects 0.000 claims description 17
- 239000012790 adhesive layer Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 4
- -1 aromatic epoxides Chemical class 0.000 description 33
- 239000000463 material Substances 0.000 description 21
- 230000008569 process Effects 0.000 description 20
- 239000000203 mixture Substances 0.000 description 19
- 239000004593 Epoxy Substances 0.000 description 17
- 150000001875 compounds Chemical class 0.000 description 14
- 230000002209 hydrophobic effect Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 238000009472 formulation Methods 0.000 description 11
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 7
- 150000002118 epoxides Chemical class 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 239000003623 enhancer Substances 0.000 description 4
- RMVRSNDYEFQCLF-UHFFFAOYSA-O phenylsulfanium Chemical compound [SH2+]C1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-O 0.000 description 4
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical class C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 3
- LTYMSROWYAPPGB-UHFFFAOYSA-N diphenyl sulfide Chemical compound C=1C=CC=CC=1SC1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- ADAHGVUHKDNLEB-UHFFFAOYSA-N Bis(2,3-epoxycyclopentyl)ether Chemical compound C1CC2OC2C1OC1CCC2OC21 ADAHGVUHKDNLEB-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 239000002318 adhesion promoter Substances 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 229940106691 bisphenol a Drugs 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 239000001046 green dye Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000976 ink Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- KKYDYRWEUFJLER-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5,5,6,6,7,7,10,10,10-heptadecafluorodecyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CCC(F)(F)F KKYDYRWEUFJLER-UHFFFAOYSA-N 0.000 description 1
- AWEQQCQTINXZSF-UHFFFAOYSA-N 2-(3-trimethoxysilylpropyl)guanidine Chemical compound CO[Si](OC)(OC)CCCN=C(N)N AWEQQCQTINXZSF-UHFFFAOYSA-N 0.000 description 1
- UTHHKUBZIBBOIT-UHFFFAOYSA-N 4-methyl-2-[(4-methyl-7-oxabicyclo[4.1.0]heptan-3-yl)methyl]-7-oxabicyclo[4.1.0]hept-2-ene-3-carboxylic acid Chemical compound CC1CC2OC2C(CC2CC3OC3CC2C)=C1C(O)=O UTHHKUBZIBBOIT-UHFFFAOYSA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- NNOOIWZFFJUFBS-UHFFFAOYSA-M bis(2-tert-butylphenyl)iodanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.CC(C)(C)C1=CC=CC=C1[I+]C1=CC=CC=C1C(C)(C)C NNOOIWZFFJUFBS-UHFFFAOYSA-M 0.000 description 1
- LMMDJMWIHPEQSJ-UHFFFAOYSA-N bis[(3-methyl-7-oxabicyclo[4.1.0]heptan-4-yl)methyl] hexanedioate Chemical compound C1C2OC2CC(C)C1COC(=O)CCCCC(=O)OCC1CC2OC2CC1C LMMDJMWIHPEQSJ-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- GZGREZWGCWVAEE-UHFFFAOYSA-N chloro-dimethyl-octadecylsilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](C)(C)Cl GZGREZWGCWVAEE-UHFFFAOYSA-N 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- RXKJFZQQPQGTFL-UHFFFAOYSA-N dihydroxyacetone Chemical compound OCC(=O)CO RXKJFZQQPQGTFL-UHFFFAOYSA-N 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- LTYMSROWYAPPGB-UHFFFAOYSA-O diphenylsulfanium Chemical compound C=1C=CC=CC=1[SH+]C1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-O 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 1
- 229960003493 octyltriethoxysilane Drugs 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 150000008442 polyphenolic compounds Chemical class 0.000 description 1
- 235000013824 polyphenols Nutrition 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- GBPOWOIWSYUZMH-UHFFFAOYSA-N sodium;trihydroxy(methyl)silane Chemical compound [Na+].C[Si](O)(O)O GBPOWOIWSYUZMH-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- HZWYYZMKXWSBJL-UHFFFAOYSA-N tert-butyl(methoxy)silane Chemical compound CO[SiH2]C(C)(C)C HZWYYZMKXWSBJL-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000002560 therapeutic procedure Methods 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
- B41J2/1603—Production of bubble jet print heads of the front shooter type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1637—Manufacturing processes molding
- B41J2/1639—Manufacturing processes molding sacrificial molding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
- B81C1/00396—Mask characterised by its composition, e.g. multilayer masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0037—Production of three-dimensional images
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/05—Microfluidics
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0385—Macromolecular compounds which are rendered insoluble or differentially wettable using epoxidised novolak resin
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Materials For Photolithography (AREA)
- Epoxy Resins (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Description
g線=435nm
h線=405nm
i線=365nm
中紫外線=310nm
深紫外線=254nm
12:DRIEプロセス
14、16、18、20、22、24、26、28、30、32、34、36、38、40、42、44、52、62、64、66、68、70、72、74:ステップ
100:吐出ヘッド
110:半導体基板
112:圧電装置またはヒーター抵抗器
114:装置表面
116:流体供給ビア
118:流体供給路
120:流体チャンバー
122:部分
124、200、240:複合フィルム層
126:ノズル孔
210:第1フォトレジスト層
212:キャリアフィルム
214、242:第2フォトレジスト層
220、224:e線、g線、h線、i線、中紫外線、または深紫外線
222:マスク
226:第2マスク
228:現像されていない流れ特徴
230:現像されていないノズル特徴
244:第3フォトレジスト層
Claims (15)
- 疎水剤を含まない第1フォトレジスト層であって、350nmよりも長い第1放射線露光波長を有する光で露光可能な第1フォトレジスト層と、
少なくとも、疎水剤を含む第2フォトレジスト層であって、350nmよりも短い第2放射線露光波長を有する光で露光可能な第2フォトレジスト層と、
を含む複合フィルム層を含み、
前記複合フィルム層が、前記第1フォトレジスト層と前記第2フォトレジスト層との間に接着促進層を含まないことを特徴とする、
3D構造。 - 前記複合フィルム層が、少なくとも、疎水剤を含まない第3フォトレジスト層をさらに含む、
請求項1に記載の3D構造。 - 前記複合フィルム層が、約6μm~約150μmの範囲の厚さを有する、
請求項1又は2に記載の3D構造。 - 前記複合フィルム層の前記第1フォトレジスト層が、e線、g線、h線、i線からなる群から選択された露光波長を有する、第1放射線で撮像される、
請求項1~3のいずれか1項に記載の3D構造。 - 前記複合フィルム層の前記第2フォトレジスト層が、中紫外線、深紫外線からなる群から選択された露光波長を有する、第2放射線で撮像される、
請求項1~4のいずれか1項に記載の3D構造。 - 複合フィルム層から3D構造を製造する方法であって、
疎水剤を含まない第1フォトレジスト層であって、350nmよりも長い第1放射線露光波長を有する光で露光可能な第1フォトレジスト層をキャリアフィルムに塗布することと、
前記第1フォトレジスト層を乾燥させて、乾燥した第1フォトレジスト層を提供することと、
前記疎水剤を含む第2フォトレジスト層であって、350nmよりも短い第2放射線露光波長を有する光で露光可能な第2フォトレジスト層を前記乾燥した第1フォトレジスト層に塗布することと、
前記第2フォトレジスト層を乾燥させて、乾燥した第2フォトレジスト層を提供し、前記乾燥した第1フォトレジスト層および前記乾燥した第2フォトレジスト層が中間接着層を持たない前記複合フィルム層を形成することと、
前記複合フィルム層を基板の表面にラミネートすることと、
前記複合フィルム層をe線、g線、h線、i線、中紫外線、深紫外線からなる群から選択された露光波長を有する放射線に露光させることと、
前記複合フィルム層を同時に現像して、前記3D構造を提供することと、を含むことを特徴とする
方法。 - 前記複合フィルム層を提供するため、第3フォトレジスト層を、前記乾燥した第2フォトレジスト層に設けること
をさらに含み、
前記第3フォトレジスト層が前記疎水剤を含まない、
請求項6に記載の方法。 - 前記複合フィルム層が、約60μm~約150μmの範囲の厚さを有する、
請求項6又は7に記載の方法。 - 前記複合フィルム層の前記第1フォトレジスト層が、e線、g線、h線、i線からなる群から選択された露光波長を有する第1放射線で露光される、
請求項6~8のいずれか1項に記載の方法。 - 前記複合フィルム層の前記第2フォトレジスト層が、中紫外線、深紫外線からなる群から選択された露光波長を有する第2放射線で露光される、
請求項6~9のいずれか1項に記載の方法。 - 流体吐出ヘッドを含む流体吐出装置であって、
装置表面の複数の流体吐出アクチュエータおよびそれによりエッチングされた1つまたはそれ以上の流体供給ビアを含む半導体基板と、
前記半導体基板の前記装置表面に塗布された接着促進層と、
前記接着促進層の上に配置され、疎水剤を含まない第1フォトレジスト層であって、350nmよりも長い第1放射線露光波長を有する光で露光可能な第1フォトレジスト層と、少なくとも、前記疎水剤を含む第2フォトレジスト層であって、350nmよりも短い第2放射線露光波長を有する光で露光可能な第2フォトレジスト層とを含み、前記第1フォトレジスト層と前記第2フォトレジスト層との間に前記接着促進層を含まない、複合フィルム層と、
を含む前記流体吐出ヘッドと、
前記流体吐出ヘッドを起動するコントローラと、を含むことを特徴とする、
流体吐出装置。 - 前記複合フィルム層が、少なくとも、前記疎水剤を含まない第3フォトレジスト層をさらに含む、
請求項11に記載の流体吐出装置。 - 前記複合フィルム層が、約6μm~約150μmの範囲の厚さを有する、
請求項11又は12に記載の流体吐出装置。 - 前記複合フィルム層の前記第1フォトレジスト層が、e線、g線、h線、i線からなる群から選択された露光波長を有する第1放射線で撮像される、
請求項11~13のいずれか1項に記載の流体吐出装置。 - 前記複合フィルム層の前記第2フォトレジスト層が、中紫外線、深紫外線からなる群から選択された露光波長を有する第2放射線で撮像される、
請求項11~14のいずれか1項に記載の流体吐出装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/682,485 US10599034B2 (en) | 2017-08-21 | 2017-08-21 | Method for manufacturing MEMS devices and nano devices with varying degrees of hydrophobicity and hydrophilicity in a composite photoimageable dry film |
US15/682,485 | 2017-08-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019034555A JP2019034555A (ja) | 2019-03-07 |
JP7205107B2 true JP7205107B2 (ja) | 2023-01-17 |
Family
ID=63449196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018153451A Active JP7205107B2 (ja) | 2017-08-21 | 2018-08-17 | 3d構造、3d構造を製造する方法、および流体吐出装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10599034B2 (ja) |
EP (1) | EP3447578A1 (ja) |
JP (1) | JP7205107B2 (ja) |
CN (1) | CN109422236A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11958292B2 (en) * | 2021-03-19 | 2024-04-16 | Funai Electric Co., Ltd. | Solvent compatible nozzle plate |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050270332A1 (en) | 2004-06-08 | 2005-12-08 | Strand Thomas R | Fluid ejection device with dry-film photo-resist layer |
US20090185003A1 (en) | 2008-01-23 | 2009-07-23 | Craig Michael Bertelsen | Hydrophobic nozzle plate structures for micro-fluid ejection heads |
JP2013256014A (ja) | 2012-06-11 | 2013-12-26 | Canon Inc | 吐出口形成部材及び液体吐出ヘッドの製造方法 |
JP2018051883A (ja) | 2016-09-28 | 2018-04-05 | キヤノン株式会社 | 液体吐出ヘッド及びその製造方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5919168A (ja) | 1982-07-26 | 1984-01-31 | Canon Inc | インクジエツト記録ヘツド |
DE3340154A1 (de) | 1983-11-07 | 1985-05-15 | Basf Ag, 6700 Ludwigshafen | Verfahren zur herstellung von bildmaessig strukturierten resistschichten und fuer dieses verfahren geeigneter trockenfilmresist |
US6462107B1 (en) | 1997-12-23 | 2002-10-08 | The Texas A&M University System | Photoimageable compositions and films for printed wiring board manufacture |
US7001708B1 (en) | 2001-11-28 | 2006-02-21 | University Of Central Florida Research Foundation, Inc. | Photosensitive polymeric material for worm optical data storage with two-photon fluorescent readout |
KR100474471B1 (ko) * | 2002-08-20 | 2005-03-08 | 삼성전자주식회사 | 모노리식 버블 잉크젯 프린트 헤드 및 그 제조방법 |
JP2004140313A (ja) | 2002-08-22 | 2004-05-13 | Jsr Corp | 二層積層膜を用いた電極パッド上へのバンプ形成方法 |
US6709805B1 (en) | 2003-04-24 | 2004-03-23 | Lexmark International, Inc. | Inkjet printhead nozzle plate |
US7378225B2 (en) | 2004-04-06 | 2008-05-27 | Kyle Baldwin | Method of forming a metal pattern on a substrate |
US7229745B2 (en) * | 2004-06-14 | 2007-06-12 | Bae Systems Information And Electronic Systems Integration Inc. | Lithographic semiconductor manufacturing using a multi-layered process |
JP2006103254A (ja) * | 2004-10-08 | 2006-04-20 | Brother Ind Ltd | ノズルプレートの製造方法、ノズルプレート及びインクジェットヘッド |
CN100572074C (zh) * | 2004-12-28 | 2009-12-23 | 佳能株式会社 | 清洁喷墨头的方法和喷墨记录设备 |
JP2006347072A (ja) | 2005-06-17 | 2006-12-28 | Canon Inc | 液体吐出ヘッドの製造方法、液体吐出ヘッド、および液体吐出記録装置 |
US7364268B2 (en) * | 2005-09-30 | 2008-04-29 | Lexmark International, Inc. | Nozzle members, compositions and methods for micro-fluid ejection heads |
US7654637B2 (en) | 2005-09-30 | 2010-02-02 | Lexmark International, Inc | Photoimageable nozzle members and methods relating thereto |
WO2007124092A2 (en) | 2006-04-21 | 2007-11-01 | Cornell Research Foundation, Inc. | Photoacid generator compounds and compositions |
KR100690929B1 (ko) | 2006-05-03 | 2007-03-09 | 한국기계연구원 | 건식필름레지스트를 이용하여 원하는 패턴두께 또는 높은종횡비를 가지는 고해상도패턴 형성 방법 |
US8109608B2 (en) | 2007-10-04 | 2012-02-07 | Lexmark International, Inc. | Micro-fluid ejection head and stress relieved orifice plate therefor |
US8292402B2 (en) | 2008-02-13 | 2012-10-23 | Lexmark International, Inc. | Photoimageable dry film formulation |
KR101301497B1 (ko) * | 2008-03-20 | 2013-09-10 | 삼성전자주식회사 | 잉크젯 프린트헤드 및 그 제조방법 |
US8394575B2 (en) * | 2010-09-30 | 2013-03-12 | Lexmark International, Inc. | Formulations for environmentally friendly photoresist film layers |
JP5620017B2 (ja) | 2011-12-27 | 2014-11-05 | 太陽インキ製造株式会社 | ドライフィルム、積層構造体、プリント配線板、及び積層構造体の製造方法 |
US8728715B2 (en) * | 2012-01-13 | 2014-05-20 | Funai Electric Co., Ltd. | Non-photosensitive siloxane coating for processing hydrophobic photoimageable nozzle plate |
JP5615415B2 (ja) | 2012-09-28 | 2014-10-29 | 太陽インキ製造株式会社 | 硬化性樹脂組成物、ソルダーレジスト形成用組成物、ドライフィルムおよびプリント配線板、並びに積層構造体及びその製造方法 |
JP6333016B2 (ja) | 2014-03-28 | 2018-05-30 | キヤノン株式会社 | 液体吐出ヘッドの製造方法 |
JP2016038468A (ja) | 2014-08-07 | 2016-03-22 | キヤノン株式会社 | 感光性樹脂層のパターニング方法 |
JP2016043516A (ja) * | 2014-08-20 | 2016-04-04 | キヤノン株式会社 | 液体吐出ヘッドの製造方法 |
JP6525630B2 (ja) | 2015-02-18 | 2019-06-05 | キヤノン株式会社 | 液体吐出ヘッドおよびその製造方法 |
US10189253B2 (en) * | 2016-09-28 | 2019-01-29 | Canon Kabushiki Kaisha | Liquid ejection head and method for producing the same |
US9855566B1 (en) * | 2016-10-17 | 2018-01-02 | Funai Electric Co., Ltd. | Fluid ejection head and process for making a fluid ejection head structure |
-
2017
- 2017-08-21 US US15/682,485 patent/US10599034B2/en active Active
-
2018
- 2018-08-14 CN CN201810919939.6A patent/CN109422236A/zh active Pending
- 2018-08-14 EP EP18188916.3A patent/EP3447578A1/en active Pending
- 2018-08-17 JP JP2018153451A patent/JP7205107B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050270332A1 (en) | 2004-06-08 | 2005-12-08 | Strand Thomas R | Fluid ejection device with dry-film photo-resist layer |
US20090185003A1 (en) | 2008-01-23 | 2009-07-23 | Craig Michael Bertelsen | Hydrophobic nozzle plate structures for micro-fluid ejection heads |
JP2013256014A (ja) | 2012-06-11 | 2013-12-26 | Canon Inc | 吐出口形成部材及び液体吐出ヘッドの製造方法 |
JP2018051883A (ja) | 2016-09-28 | 2018-04-05 | キヤノン株式会社 | 液体吐出ヘッド及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US10599034B2 (en) | 2020-03-24 |
JP2019034555A (ja) | 2019-03-07 |
EP3447578A1 (en) | 2019-02-27 |
US20190056660A1 (en) | 2019-02-21 |
CN109422236A (zh) | 2019-03-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7268302B2 (ja) | 3d構造、3d構造を製造する方法、および流体吐出装置 | |
JP7288165B2 (ja) | 3d構造、3d構造を製造する方法、および流体吐出装置 | |
JP7003556B2 (ja) | 流体吐出ヘッドと流体吐出ヘッドの製造方法 | |
JP4497633B2 (ja) | 撥液体層の形成方法及び液体吐出ヘッドの製造方法 | |
WO2007041176A2 (en) | Photoimageable nozzle members and methods relating thereto | |
JP6478741B2 (ja) | 液体吐出ヘッドの製造方法 | |
JP7205107B2 (ja) | 3d構造、3d構造を製造する方法、および流体吐出装置 | |
EP3763764A1 (en) | Dry film formulation | |
JP2022145634A (ja) | 複合フォトレジスト材料とその製造方法、および流体吐出ヘッド | |
US20050167043A1 (en) | Formation of photopatterned ink jet nozzle modules using photopatternable nozzle-forming bonding layer | |
EP4079523A1 (en) | Ejection head having optimized fluid ejection characteristics | |
JP2003251808A (ja) | インクジェット記録ヘッドの流路構成部材及びインクジェット記録ヘッドの製造方法 | |
JP2021109385A (ja) | 液体吐出ヘッド及び液体吐出ヘッドの製造方法 | |
US20080007595A1 (en) | Methods of Etching Polymeric Materials Suitable for Making Micro-Fluid Ejection Heads and Micro-Fluid Ejection Heads Relating Thereto | |
US11815812B2 (en) | Photoresist formulation | |
JP2018114749A (ja) | 液体吐出ヘッドおよびその製造方法 | |
JP2023067184A (ja) | 液体吐出ヘッド及び液体吐出ヘッドの製造方法 | |
JPS591269A (ja) | インクジエツト記録ヘツドの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210616 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220426 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220531 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220728 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221129 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221212 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7205107 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |