JP7199725B2 - リソグラフィ・ツールの実効照射量一貫性または均一性を判断する方法、システム、コンピュータ・プログラム製品およびコンピュータ・プログラム - Google Patents

リソグラフィ・ツールの実効照射量一貫性または均一性を判断する方法、システム、コンピュータ・プログラム製品およびコンピュータ・プログラム Download PDF

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JP7199725B2
JP7199725B2 JP2019569442A JP2019569442A JP7199725B2 JP 7199725 B2 JP7199725 B2 JP 7199725B2 JP 2019569442 A JP2019569442 A JP 2019569442A JP 2019569442 A JP2019569442 A JP 2019569442A JP 7199725 B2 JP7199725 B2 JP 7199725B2
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exposure
substrate
lithography tool
effective dose
computer
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JP2020524816A5 (https=
JP2020524816A (ja
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ロビンソン、クリストファー、フレデリック
コーリス、ダン
トンプソン、ルチアナ メリ
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International Business Machines Corp
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International Business Machines Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2019569442A 2017-06-23 2018-06-11 リソグラフィ・ツールの実効照射量一貫性または均一性を判断する方法、システム、コンピュータ・プログラム製品およびコンピュータ・プログラム Active JP7199725B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15/631,617 US10274836B2 (en) 2017-06-23 2017-06-23 Determination of lithography effective dose uniformity
US15/631,617 2017-06-23
US15/822,242 US10281826B2 (en) 2017-06-23 2017-11-27 Determination of lithography effective dose uniformity
US15/822,242 2017-11-27
PCT/IB2018/054197 WO2018234921A1 (en) 2017-06-23 2018-06-11 Determination of lithography effective dose uniformity

Publications (3)

Publication Number Publication Date
JP2020524816A JP2020524816A (ja) 2020-08-20
JP2020524816A5 JP2020524816A5 (https=) 2020-10-01
JP7199725B2 true JP7199725B2 (ja) 2023-01-06

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JP2019569442A Active JP7199725B2 (ja) 2017-06-23 2018-06-11 リソグラフィ・ツールの実効照射量一貫性または均一性を判断する方法、システム、コンピュータ・プログラム製品およびコンピュータ・プログラム

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US (2) US10274836B2 (https=)
JP (1) JP7199725B2 (https=)
CN (1) CN110709777B (https=)
DE (1) DE112018002123B4 (https=)
GB (1) GB2577661B (https=)
WO (1) WO2018234921A1 (https=)

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* Cited by examiner, † Cited by third party
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CN110298847B (zh) * 2019-06-27 2021-06-04 浙江工业大学 一种长时间背景收集的背景建模方法
US10921716B1 (en) * 2019-10-08 2021-02-16 International Business Machines Corporation Lithographic dose characterization
US11194254B2 (en) 2019-11-06 2021-12-07 International Business Machines Corporation Lithography process delay characterization and effective dose compensation
US11561481B2 (en) 2020-07-20 2023-01-24 International Business Machines Corporation Using E0 exposures for track/cluster monitoring
CN113092496B (zh) * 2021-04-06 2022-10-04 深圳市卓兴半导体科技有限公司 一种检测晶圆分布范围的方法、系统及存储介质

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JP2008140795A (ja) 2006-11-29 2008-06-19 Canon Inc 露光装置及び方法、並びに、デバイス製造方法
JP2013084731A (ja) 2011-10-07 2013-05-09 Tokyo Electron Ltd 露光装置の設定方法、基板撮像装置及び記憶媒体
JP2016540246A (ja) 2013-11-27 2016-12-22 東京エレクトロン株式会社 光学投影を使用する基板チューニングシステム及び方法

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US5789124A (en) 1996-10-10 1998-08-04 International Business Machines Corporation Method of monitoring lithographic resist poisoning
US6021009A (en) 1998-06-30 2000-02-01 Intel Corporation Method and apparatus to improve across field dimensional control in a microlithography tool
US6174632B1 (en) * 1999-03-05 2001-01-16 Advanced Micro Devices, Inc. Wafer defect detection method utilizing wafer with development residue attracting area
US6943882B2 (en) 2002-12-19 2005-09-13 Nikon Precision, Inc. Method to diagnose imperfections in illuminator of a lithographic tool
US7794903B2 (en) * 2006-08-15 2010-09-14 Infineon Technologies Ag Metrology systems and methods for lithography processes
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US7907770B2 (en) 2007-06-15 2011-03-15 United Microelectronics Corp. Method for inspecting photomask and real-time online method for inspecting photomask
CN101221371B (zh) * 2008-01-24 2010-06-02 上海微电子装备有限公司 图形定位精度检测装置及其检测方法
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KR101862015B1 (ko) 2011-03-25 2018-07-04 삼성전자주식회사 노광 장치에서 노광 에너지 측정 방법
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JP2008140795A (ja) 2006-11-29 2008-06-19 Canon Inc 露光装置及び方法、並びに、デバイス製造方法
JP2013084731A (ja) 2011-10-07 2013-05-09 Tokyo Electron Ltd 露光装置の設定方法、基板撮像装置及び記憶媒体
JP2016540246A (ja) 2013-11-27 2016-12-22 東京エレクトロン株式会社 光学投影を使用する基板チューニングシステム及び方法

Also Published As

Publication number Publication date
CN110709777B (zh) 2021-06-15
US20180373164A1 (en) 2018-12-27
DE112018002123T5 (de) 2020-01-02
US10274836B2 (en) 2019-04-30
WO2018234921A1 (en) 2018-12-27
JP2020524816A (ja) 2020-08-20
GB202000788D0 (en) 2020-03-04
GB2577661A (en) 2020-04-01
US20180373165A1 (en) 2018-12-27
CN110709777A (zh) 2020-01-17
DE112018002123B4 (de) 2020-12-10
US10281826B2 (en) 2019-05-07
GB2577661B (en) 2020-07-15

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