CN110709777B - 光刻有效剂量均匀性的确定 - Google Patents

光刻有效剂量均匀性的确定 Download PDF

Info

Publication number
CN110709777B
CN110709777B CN201880036453.6A CN201880036453A CN110709777B CN 110709777 B CN110709777 B CN 110709777B CN 201880036453 A CN201880036453 A CN 201880036453A CN 110709777 B CN110709777 B CN 110709777B
Authority
CN
China
Prior art keywords
substrate
image file
exposure
effective dose
lithography tool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880036453.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN110709777A (zh
Inventor
C·F·罗宾逊
D·科利斯
L·梅里汤普森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN110709777A publication Critical patent/CN110709777A/zh
Application granted granted Critical
Publication of CN110709777B publication Critical patent/CN110709777B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201880036453.6A 2017-06-23 2018-06-11 光刻有效剂量均匀性的确定 Active CN110709777B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15/631,617 US10274836B2 (en) 2017-06-23 2017-06-23 Determination of lithography effective dose uniformity
US15/631,617 2017-06-23
US15/822,242 US10281826B2 (en) 2017-06-23 2017-11-27 Determination of lithography effective dose uniformity
US15/822,242 2017-11-27
PCT/IB2018/054197 WO2018234921A1 (en) 2017-06-23 2018-06-11 Determination of lithography effective dose uniformity

Publications (2)

Publication Number Publication Date
CN110709777A CN110709777A (zh) 2020-01-17
CN110709777B true CN110709777B (zh) 2021-06-15

Family

ID=64692503

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880036453.6A Active CN110709777B (zh) 2017-06-23 2018-06-11 光刻有效剂量均匀性的确定

Country Status (6)

Country Link
US (2) US10274836B2 (https=)
JP (1) JP7199725B2 (https=)
CN (1) CN110709777B (https=)
DE (1) DE112018002123B4 (https=)
GB (1) GB2577661B (https=)
WO (1) WO2018234921A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110298847B (zh) * 2019-06-27 2021-06-04 浙江工业大学 一种长时间背景收集的背景建模方法
US10921716B1 (en) * 2019-10-08 2021-02-16 International Business Machines Corporation Lithographic dose characterization
US11194254B2 (en) 2019-11-06 2021-12-07 International Business Machines Corporation Lithography process delay characterization and effective dose compensation
US11561481B2 (en) 2020-07-20 2023-01-24 International Business Machines Corporation Using E0 exposures for track/cluster monitoring
CN113092496B (zh) * 2021-04-06 2022-10-04 深圳市卓兴半导体科技有限公司 一种检测晶圆分布范围的方法、系统及存储介质

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04259849A (ja) * 1991-02-15 1992-09-16 Toshiba Corp 検査装置
DE69231715D1 (de) 1991-03-04 2001-04-12 At & T Corp Herstellungsverfahren von integrierten Halbleiterschaltungen unter Anwendung von latenten Bildern
JPH05102031A (ja) * 1991-10-04 1993-04-23 Fujitsu Ltd 感光性被膜の感度測定法及び耐蝕性被膜の形成法
US5789124A (en) 1996-10-10 1998-08-04 International Business Machines Corporation Method of monitoring lithographic resist poisoning
US6021009A (en) 1998-06-30 2000-02-01 Intel Corporation Method and apparatus to improve across field dimensional control in a microlithography tool
US6174632B1 (en) * 1999-03-05 2001-01-16 Advanced Micro Devices, Inc. Wafer defect detection method utilizing wafer with development residue attracting area
US6943882B2 (en) 2002-12-19 2005-09-13 Nikon Precision, Inc. Method to diagnose imperfections in illuminator of a lithographic tool
US7794903B2 (en) * 2006-08-15 2010-09-14 Infineon Technologies Ag Metrology systems and methods for lithography processes
US7483804B2 (en) 2006-09-29 2009-01-27 Tokyo Electron Limited Method of real time dynamic CD control
JP5025236B2 (ja) * 2006-11-29 2012-09-12 キヤノン株式会社 露光装置及び方法、並びに、デバイス製造方法
US7907770B2 (en) 2007-06-15 2011-03-15 United Microelectronics Corp. Method for inspecting photomask and real-time online method for inspecting photomask
CN101221371B (zh) * 2008-01-24 2010-06-02 上海微电子装备有限公司 图形定位精度检测装置及其检测方法
NL1036468A1 (nl) * 2008-02-27 2009-08-31 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
NL1036647A1 (nl) 2008-04-16 2009-10-19 Asml Netherlands Bv A method of measuring a lithographic projection apparatus.
JP5545782B2 (ja) 2009-07-31 2014-07-09 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置の焦点測定方法、散乱計、リソグラフィシステム、およびリソグラフィセル
JP5221611B2 (ja) 2010-09-13 2013-06-26 株式会社東芝 ドーズデータ生成装置、露光システム、ドーズデータ生成方法および半導体装置の製造方法
KR101862015B1 (ko) 2011-03-25 2018-07-04 삼성전자주식회사 노광 장치에서 노광 에너지 측정 방법
SG194043A1 (en) * 2011-04-04 2013-11-29 3M Innovative Properties Co Optical stack comprising adhesive
JP2014142368A (ja) * 2011-05-13 2014-08-07 Sharp Corp 光拡散部材およびその製造方法、表示装置
JP5640943B2 (ja) * 2011-10-07 2014-12-17 東京エレクトロン株式会社 露光装置の設定方法、基板撮像装置及び記憶媒体
US9646898B2 (en) * 2013-11-27 2017-05-09 Tokyo Electron Limited Methods for treating a substrate by optical projection of a correction pattern based on a detected spatial heat signature of the substrate
KR102271772B1 (ko) * 2015-03-11 2021-07-01 삼성전자주식회사 Euv 대역외 광량 분포의 측정 방법 및 이를 이용한 euv 노광기의 성능 검사 방법
CN105446086A (zh) * 2015-12-21 2016-03-30 中国科学院长春光学精密机械与物理研究所 光刻系统中照明均匀性测量方法

Also Published As

Publication number Publication date
US20180373164A1 (en) 2018-12-27
DE112018002123T5 (de) 2020-01-02
US10274836B2 (en) 2019-04-30
WO2018234921A1 (en) 2018-12-27
JP2020524816A (ja) 2020-08-20
GB202000788D0 (en) 2020-03-04
GB2577661A (en) 2020-04-01
JP7199725B2 (ja) 2023-01-06
US20180373165A1 (en) 2018-12-27
CN110709777A (zh) 2020-01-17
DE112018002123B4 (de) 2020-12-10
US10281826B2 (en) 2019-05-07
GB2577661B (en) 2020-07-15

Similar Documents

Publication Publication Date Title
CN110709777B (zh) 光刻有效剂量均匀性的确定
US12586170B2 (en) System and method for generating predictive images for wafer inspection using machine learning
TWI755386B (zh) 計量系統及方法
JP5695924B2 (ja) 欠陥推定装置および欠陥推定方法並びに検査装置および検査方法
JP4542164B2 (ja) パターン検査装置、パターン検査方法及びプログラム
JP2019533312A (ja) パターニングされたウェハの特性評価のためのハイブリッド計量
CN111430261B (zh) 一种光刻机工艺稳定性检测方法及装置
CN110582842A (zh) 依据光学检验结果进行计量导引检验样品成形
JP2012002663A (ja) パターン検査装置およびパターン検査方法
Kong et al. Measuring local CD uniformity in EUV vias with scatterometry and machine learning
TWI874699B (zh) 檢驗半導體樣品的系統及方法和包含指令之非暫時性電腦可讀媒體
JP4448181B2 (ja) パターン検査方法、パターン検査装置及びプログラム
JP5075946B2 (ja) パターン検査装置およびパターン検査方法
JP2015090446A (ja) 計測装置
JP4206393B2 (ja) パターン検査方法
US10921716B1 (en) Lithographic dose characterization
TWI841933B (zh) 用於在帶電粒子系統中之檢查期間判定局部焦點之系統及方法
CN120936953A (zh) 高效的动态采样计划生成和精确的探针管芯损失预测方法
JP6255191B2 (ja) 検査装置および検査方法
JP2023119903A (ja) パターン検査方法、及びパターン検査装置
KR20230119139A (ko) 하전 입자 빔 검사 시스템에서의 토폴로지 기반의 이미지 렌더링
JP7144262B2 (ja) パターン検査装置及び参照画像の作成方法
Maas et al. Sub-50 nm metrology on extreme ultra violet chemically amplified resist—A systematic assessment
Beral et al. High-NA EUV defectivity inspection: overview and challenges
JP6533062B2 (ja) パターン検査方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant