JP2020524816A5 - - Google Patents

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JP2020524816A5
JP2020524816A5 JP2019569442A JP2019569442A JP2020524816A5 JP 2020524816 A5 JP2020524816 A5 JP 2020524816A5 JP 2019569442 A JP2019569442 A JP 2019569442A JP 2019569442 A JP2019569442 A JP 2019569442A JP 2020524816 A5 JP2020524816 A5 JP 2020524816A5
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JP
Japan
Prior art keywords
image file
substrate
tool
graphical image
lithography tool
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JP2019569442A
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English (en)
Japanese (ja)
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JP2020524816A (ja
JP7199725B2 (ja
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Priority claimed from US15/631,617 external-priority patent/US10274836B2/en
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JP2019569442A 2017-06-23 2018-06-11 リソグラフィ・ツールの実効照射量一貫性または均一性を判断する方法、システム、コンピュータ・プログラム製品およびコンピュータ・プログラム Active JP7199725B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15/631,617 US10274836B2 (en) 2017-06-23 2017-06-23 Determination of lithography effective dose uniformity
US15/631,617 2017-06-23
US15/822,242 US10281826B2 (en) 2017-06-23 2017-11-27 Determination of lithography effective dose uniformity
US15/822,242 2017-11-27
PCT/IB2018/054197 WO2018234921A1 (en) 2017-06-23 2018-06-11 Determination of lithography effective dose uniformity

Publications (3)

Publication Number Publication Date
JP2020524816A JP2020524816A (ja) 2020-08-20
JP2020524816A5 true JP2020524816A5 (https=) 2020-10-01
JP7199725B2 JP7199725B2 (ja) 2023-01-06

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ID=64692503

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JP2019569442A Active JP7199725B2 (ja) 2017-06-23 2018-06-11 リソグラフィ・ツールの実効照射量一貫性または均一性を判断する方法、システム、コンピュータ・プログラム製品およびコンピュータ・プログラム

Country Status (6)

Country Link
US (2) US10274836B2 (https=)
JP (1) JP7199725B2 (https=)
CN (1) CN110709777B (https=)
DE (1) DE112018002123B4 (https=)
GB (1) GB2577661B (https=)
WO (1) WO2018234921A1 (https=)

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CN110298847B (zh) * 2019-06-27 2021-06-04 浙江工业大学 一种长时间背景收集的背景建模方法
US10921716B1 (en) * 2019-10-08 2021-02-16 International Business Machines Corporation Lithographic dose characterization
US11194254B2 (en) 2019-11-06 2021-12-07 International Business Machines Corporation Lithography process delay characterization and effective dose compensation
US11561481B2 (en) 2020-07-20 2023-01-24 International Business Machines Corporation Using E0 exposures for track/cluster monitoring
CN113092496B (zh) * 2021-04-06 2022-10-04 深圳市卓兴半导体科技有限公司 一种检测晶圆分布范围的方法、系统及存储介质

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JPH04259849A (ja) * 1991-02-15 1992-09-16 Toshiba Corp 検査装置
DE69231715D1 (de) 1991-03-04 2001-04-12 At & T Corp Herstellungsverfahren von integrierten Halbleiterschaltungen unter Anwendung von latenten Bildern
JPH05102031A (ja) * 1991-10-04 1993-04-23 Fujitsu Ltd 感光性被膜の感度測定法及び耐蝕性被膜の形成法
US5789124A (en) 1996-10-10 1998-08-04 International Business Machines Corporation Method of monitoring lithographic resist poisoning
US6021009A (en) 1998-06-30 2000-02-01 Intel Corporation Method and apparatus to improve across field dimensional control in a microlithography tool
US6174632B1 (en) * 1999-03-05 2001-01-16 Advanced Micro Devices, Inc. Wafer defect detection method utilizing wafer with development residue attracting area
US6943882B2 (en) 2002-12-19 2005-09-13 Nikon Precision, Inc. Method to diagnose imperfections in illuminator of a lithographic tool
US7794903B2 (en) * 2006-08-15 2010-09-14 Infineon Technologies Ag Metrology systems and methods for lithography processes
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JP5025236B2 (ja) * 2006-11-29 2012-09-12 キヤノン株式会社 露光装置及び方法、並びに、デバイス製造方法
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CN101221371B (zh) * 2008-01-24 2010-06-02 上海微电子装备有限公司 图形定位精度检测装置及其检测方法
NL1036468A1 (nl) * 2008-02-27 2009-08-31 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
NL1036647A1 (nl) 2008-04-16 2009-10-19 Asml Netherlands Bv A method of measuring a lithographic projection apparatus.
JP5545782B2 (ja) 2009-07-31 2014-07-09 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置の焦点測定方法、散乱計、リソグラフィシステム、およびリソグラフィセル
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KR101862015B1 (ko) 2011-03-25 2018-07-04 삼성전자주식회사 노광 장치에서 노광 에너지 측정 방법
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JP5640943B2 (ja) * 2011-10-07 2014-12-17 東京エレクトロン株式会社 露光装置の設定方法、基板撮像装置及び記憶媒体
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KR102271772B1 (ko) * 2015-03-11 2021-07-01 삼성전자주식회사 Euv 대역외 광량 분포의 측정 방법 및 이를 이용한 euv 노광기의 성능 검사 방법
CN105446086A (zh) * 2015-12-21 2016-03-30 中国科学院长春光学精密机械与物理研究所 光刻系统中照明均匀性测量方法

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