JP7192886B2 - semiconductor equipment - Google Patents

Description

The technology disclosed in this specification relates to a semiconductor device.

Japanese Patent Application Laid-Open No. 2017-159335 and US Patent Application Publication No. 2013/0249069 disclose semiconductor devices. These semiconductor devices face a first semiconductor element and a second semiconductor element, a sealing body that seals the first semiconductor element and the second semiconductor element, and sandwich the first semiconductor element and the second semiconductor element, respectively. It has a first conductor plate, a second conductor plate, a third conductor plate and a fourth conductor plate. Inside the sealing body, the first conductor plate and the second conductor plate are electrically connected to the first semiconductor element, and the third conductor plate and the fourth conductor plate are connected to the third conductor plate and the fourth conductor plate. is electrically connected to The second conductor plate and the third conductor plate are connected to each other via a joint structure inside the sealing body.

In the semiconductor device having the above-described joint structure, the number of parts constituting the semiconductor device increases by the presence of the joint structure, which may lead to complication of the manufacturing process such as an increase in man-hours. This specification provides a technique that can prevent the manufacturing process from becoming complicated even for a semiconductor device having a joint structure.

A semiconductor device disclosed in this specification includes a first semiconductor element, a second semiconductor element, and a sealing body that seals the first semiconductor element and the second semiconductor element. A semiconductor device includes a first conductor plate, a second conductor plate, a third conductor plate, and a fourth conductor plate. The first conductor plate and the second conductor plate face each other with the first semiconductor element interposed therebetween, and are electrically connected to the first semiconductor element inside the sealing body. The third conductor plate and the fourth conductor plate face each other with the second semiconductor element interposed therebetween, and are electrically connected to the second semiconductor element inside the sealing body. Further, the semiconductor device includes a joint structure for electrically connecting the second conductor plate and the third conductor plate to each other inside the sealing body, the joint structure including at least one joint member, A portion of the coupling member is located outside the seal.

In the semiconductor device described above, the joint structure connecting the second conductor plate and the third conductor plate includes at least one joint member, and a part of the joint member is positioned outside the sealing body. According to such a configuration, in the sealing step of forming the sealing body, the joint member can be supported from the outside of the sealing body, and the sealing structure can be easily formed with high accuracy. In addition, although not particularly limited, the joint member can be prepared as one member (so-called lead frame) together with other constituent members (for example, power terminals, etc.) located outside the sealing body. This prevents the manufacturing process of the semiconductor device from becoming complicated.

1 is a plan view showing a semiconductor device 10 of Example 1; FIG. In each drawing, the X direction indicates the direction in which the two semiconductor elements 20 and 40 are arranged, and is parallel to the conductor plates 22, 26, 42, and 46, respectively. The Y direction is perpendicular to the X direction and parallel to each conductor plate 22,26,42,46. The Z direction is perpendicular to the X and Y directions and parallel to the thickness directions of the semiconductor elements 20, 40 and conductor plates 22, 26, 42, 46, respectively. The first lower conductor plate 22 and the first upper conductor plate 26 face each other in the Z direction, and the second lower conductor plate 42 and the second upper conductor plate 46 also face each other in the Z direction. The first lower conductor plate 22 and the second lower conductor plate 42 are arranged side by side in the X direction, and the first upper conductor plate 26 and the second upper conductor plate 46 are also arranged side by side in the X direction. It is 2 is a plan view showing the internal structure of the semiconductor device 10; FIG. However, in order to clearly show the internal structure, the sealing body 18 is indicated by broken lines, and the conductor spacers 24 and 44 are omitted. FIG. 2 is a cross-sectional view taken along line III-III of FIG. 1 and shows the internal structure of the semiconductor device 10; 3 is an electronic circuit diagram of the semiconductor device 10. FIG. FIG. 2 is a perspective view showing a usage example of the semiconductor device 10; FIG. 2 is a cross-sectional view showing the internal structure of the semiconductor device 100 of Example 2; FIG. 10 is a cross-sectional view showing the internal structure of a semiconductor device 200 of Example 3; FIG. 11 is a plan view showing the internal structure of a semiconductor device 300 of Example 4; In order to clearly show the internal structure, the encapsulant 18 and the upper conductor plates 26, 46 are indicated by dashed lines, and the conductor spacers 24, 44, the insulating substrates 334, 338, the third lower conductor plate 335 and the third upper conductor Plate 339 is omitted. 10, 12, 14, 16, and 18 are illustrated in the same manner as FIG. FIG. 9 is a cross-sectional view taken along line IX-IX of FIG. 8; A plan view showing a modified example of the third power terminal 316 . Sectional drawing in the XI-XI line of FIG. A plan view showing a modified example of the third power terminal 316 . Sectional drawing in the XIII-XIII line of FIG. A plan view showing a modified example of the third power terminal 316 . FIG. 14 is a cross-sectional view taken along line XV-XV of FIG. 14; A plan view showing a modified example of the third power terminal 316 . Sectional drawing in the XVII-XVII line of FIG. FIG. 11 is a plan view showing the internal structure of a semiconductor device 400 of Example 5;

In one embodiment of the present technology, a portion of the joint member located outside the encapsulant functions as a power terminal for electrically connecting the first semiconductor element or the second semiconductor element to an external circuit. may be configured to According to such a configuration, the joint member and the power terminal can be configured with a single member, and the number of parts can be reduced and the size of the semiconductor device can be reduced.

Although it is an example, in the above configuration, the semiconductor device includes a first power terminal connected to the first conductor plate inside the encapsulant, protruding from the encapsulant, and a fourth power terminal inside the encapsulant. a second power terminal connected to the conductor plate and protruding from the encapsulant; and a third power terminal connected to the second conductor plate and the third conductor plate inside the encapsulant. you can In this case, the joint member may be formed integrally with the base end portion of the third power terminal.

In one embodiment of the present technology, the joint member includes a first joint surface joined to the second conductor plate inside the sealing body and a second joint surface joined to the third conductor plate inside the sealing body. and In this case, the first joint surface and the second joint surface may be positioned on the same surface of the joint member, or may be positioned on different surfaces of the joint member.

In the above-described embodiment, the joint member includes a first plate-shaped portion having a first joint surface, a second plate-shaped portion having a second joint surface, and a portion between the first plate-shaped portion and the second plate-shaped portion. and an intermediate plate-like portion extending through the According to such a configuration, the intermediate plate-like portion can be appropriately designed according to the positional relationship between the second conductor plate and the third conductor plate.

In the above-described embodiment, the joint member has a bent portion on at least one of the boundary between the first plate-shaped portion and the intermediate plate-shaped portion and the boundary between the second plate-shaped portion and the intermediate plate-shaped portion. may have By providing the bent portion in the joint member, the deformability of the joint member (property of deforming in response to external force) can be enhanced. Thereby, the joint member can be flexibly deformed according to the positional relationship between the second conductor plate and the third conductor plate when combining the components of the semiconductor device. The flexible deformation of the joint member can prevent the second conductor plate and the third conductor plate from unintentionally tilting with respect to the opposing first conductor plate or the fourth conductor plate. Also, when the semiconductor device is used, the joint member is flexibly deformed in accordance with the thermal expansion of the semiconductor device, thereby relieving the stress generated inside the semiconductor device.

In the above-described embodiment, the first plate-like portion and the second plate-like portion may be bent in the same direction with respect to the intermediate plate-like portion. Alternatively, the first plate-like portion and the second plate-like portion may be bent in mutually opposite directions with respect to the intermediate plate-like portion. In addition to these, the joint member may further have at least one bend in the intermediate plate-like portion. By providing the joint member with a plurality of bent portions, it is possible to enhance the deformation performance of the joint member and to give the joint member a desired shape.

In one embodiment of the present technology, the joint member may have a common plate-like portion having a first joint surface on one side and a second joint surface on the other side.

In a plan view in the thickness direction of the first semiconductor element, each of the first bonding surface and the second bonding surface may extend across a straight line passing through the centers of the first semiconductor element and the second semiconductor element. . With such a configuration, the distance from the joint member to each semiconductor element can be relatively shortened, and the inductance in the current path can be reduced.

In one embodiment of the present technology, the first conductor plate and the third conductor plate are arranged along a first plane, and the second conductor plate and the fourth conductor plate are arranged in a second plane parallel to the first plane. It may be arranged along a plane. That is, the first conductor plate and the third conductor plate may be arranged to be adjacent to each other, and the second conductor plate and the fourth conductor plate may be arranged to be adjacent to each other.

In one embodiment of the present technology, the joint structure is provided on the second conductor plate and provided on the first joint portion extending from the second conductor plate toward the fourth conductor plate and the third conductor plate. , and a second joint extending from the third conductor plate toward the first conductor plate. In this case, the first joint part may at least partially face the second joint part. Further, the base end portion of the third power terminal may be connected to each of the first joint portion and the second joint portion between the first joint portion and the second joint portion. With such a configuration, the joint structure can be configured simply.

In one embodiment of the present technology, the first joint portion extends from one side of the second conductor plate facing the fourth conductor plate, and the second joint portion faces the first conductor plate of the third conductor plate. may extend from one side of the With such a configuration, the joint structure can be configured more simply. However, as another embodiment, the first joint portion may be provided, for example, on the main surface of the second conductor plate facing the first conductor plate. Additionally or alternatively, the second joint portion may be provided on the main surface of the third conductor plate facing the fourth conductor plate.

In addition to the above configuration, in one embodiment of the present technology, the thickness of the first joint portion may be smaller than the thickness of the second conductor plate. Also, the thickness of the second joint portion may be smaller than the thickness of the third conductor plate. When the thickness of the first joint portion and the second joint portion is small, the thermal stress generated in the joint structure can be reduced when the semiconductor device operates and generates heat. In addition, the specific thickness of the first joint portion and the second joint portion can be appropriately designed.

In one embodiment of the present technology, the first joint portion may be joined to the proximal end portion of the third power terminal via the first joint joint layer. In this case, the area where the first joint bonding layer contacts the first joint portion may be larger than the area where the first joint bonding layer contacts the base end portion. With such a configuration, the first joint bonding layer forms a good fillet shape, and the first joint portion and the base end portion of the third power terminal are firmly bonded. Although not particularly limited, the fillet angle of the first joint bonding layer is preferably an acute angle (that is, less than 90 degrees). Similarly, the second joint portion may be joined to the proximal end portion of the third power terminal via the second joint joining layer. In this case, the area where the second joint bonding layer contacts the second joint portion may be larger than the area where the second joint bonding layer contacts the base end portion. With such a configuration, the second joint bonding layer forms a good fillet shape, and the second joint portion and the base end portion of the third power terminal are firmly bonded. The second joint joining layer is also not particularly limited, but preferably has an acute angle (that is, less than 90 degrees).

In an embodiment of the present technology, the first power terminal and the second power terminal may protrude parallel to each other from a first side extending between the first and second major surfaces of the encapsulant. . Current flows in opposite directions between the first power terminal and the second power terminal. When two such power terminals are arranged adjacent to each other, the inductance of the semiconductor device is reduced because the magnetic fields created by the currents flowing through each power terminal cancel each other.

In the above-described embodiments, the third power terminal may protrude from a second side of the encapsulant opposite the first side. According to such a configuration, compared to the case where the three power terminals protrude from the same side surface, the size of each power terminal can be increased while miniaturizing the semiconductor device. Additionally or alternatively, the spacing between the first power terminal and the second power terminal can be designed relatively freely.

In one embodiment of the present technology, the encapsulant has a first major surface and a second major surface opposite each other and extending between the first end surface and the second end surface, the first major surface The surface exposes the first conductor plate and the third conductor plate, and the second main surface exposes the second conductor plate and the fourth conductor plate. It can have double-sided cooling structures that are exposed on both sides of the body, where they act as heat sinks.

In one embodiment of the present technology, the semiconductor device may further comprise an insulating substrate. In this case, at least one of the first conductor plate, the second conductor plate, the third conductor plate and the fourth conductor plate may be provided on the insulating substrate. The insulating substrate has relatively high rigidity and suppresses thermal deformation that may occur in the semiconductor device. This suppresses the stress that may occur inside the semiconductor device (especially around the semiconductor element). As an example, the first conductor plate, the second conductor plate, the third conductor plate, and the fourth conductor plate may be provided on different insulating substrates. Alternatively, the first conductor plate and the third conductor plate may be provided on a common insulating substrate, or alternatively or additionally, the second conductor plate and the fourth conductor plate may be provided on a common insulating substrate. may be provided.

In one embodiment of the present technology, each of the first semiconductor device and the second semiconductor device may be a switching device. Specifically, each of the first semiconductor element and the second semiconductor element has an IGBT structure, and the IGBT structure of the first semiconductor element includes a collector connected to the first conductor plate and a collector connected to the second conductor plate. The IGBT structure of the second semiconductor device may have a collector connected to the third conductor plate and an emitter connected to the fourth conductor plate. Alternatively, each of the first semiconductor element and the second semiconductor element has a MOSFET structure, the MOSFET structure of the first semiconductor element having a drain connected to the first conductor plate and a drain connected to the second conductor plate. a source, and the MOSFET structure of the second semiconductor device may have a drain connected to the third conductive plate and a source connected to the fourth conductive plate.

(Embodiment 1) A semiconductor device 10 will be described with reference to FIGS. The semiconductor device 10 is employed, for example, in a power control device for an electric vehicle, and can constitute at least part of a power conversion circuit such as a converter or an inverter. The term "electric vehicle" as used herein broadly means a vehicle having a motor that drives the wheels, and includes, for example, an electric vehicle that is charged by external power, a hybrid vehicle that has an engine in addition to the motor, and a fuel cell that uses a fuel cell as a power source. Including battery-powered vehicles.

As shown in FIGS. 1-4, the semiconductor device 10 has a first semiconductor element 20, a second semiconductor element 40 and a sealing body 18. As shown in FIG. The sealing body 18 is configured using an insulating material. As an example, the encapsulant 18 can be formed using epoxy resin, for example. The encapsulant 18 generally has a plate shape and has a first main surface 18a and a second main surface 18b opposite to the first main surface 18a. In addition, the sealing body 18 has a first end face 18c extending between the first main surface 18a and the second main surface 18b, and a second end face 18d located on the opposite side of the first end face 18c. there is

The first semiconductor element 20 is a power semiconductor element and has a semiconductor substrate 20a and a plurality of electrodes 20b, 20c and 20d. The plurality of electrodes 20b, 20c, 20d includes a first main electrode 20b and a second main electrode 20c connected to the power circuit, and a plurality of signal electrodes 20d connected to the signal circuit. Although not particularly limited, the first semiconductor element 20 is a switching element, and is capable of conducting and disconnecting between the first main electrode 20b and the second main electrode 20c. The first main electrode 20b and the plurality of signal electrodes 20d are located on one surface of the semiconductor substrate 20a, and the second main electrode 20c is located on the other surface of the semiconductor substrate 20a.

Although not particularly limited, the first semiconductor element 20 in this embodiment is a switching element and has an IGBT structure 20e. The first main electrode 20b is connected to the emitter of the IGBT structure 20e, the second main electrode 20c is connected to the collector of the IGBT structure 20e, and the signal electrode 20d is connected to the gate of the IGBT structure 20e. there is In addition, the first semiconductor device 20 has a diode structure 20f connected in parallel with the IGBT structure 20e. The first main electrode 20b is connected to the anode of the diode structure 20f and the second main electrode 20c is connected to the cathode of the diode structure 20f. As another embodiment, the first semiconductor element 20 may have a MOSFET structure. In this case, the first main electrode 20b is connected to the source of the MOSFET structure, the second main electrode 20c is connected to the drain of the MOSFET structure and the signal electrode 20d is connected to the gate of the MOSFET structure.

Similarly, the second semiconductor element 40 is a power semiconductor element and has a semiconductor substrate 40a and a plurality of electrodes 40b, 40c and 40d. The plurality of electrodes 40b, 40c, 40d includes a first main electrode 40b and a second main electrode 40c connected to the power circuit, and a plurality of signal electrodes 40d connected to the signal circuit. Although not particularly limited, the second semiconductor element 40 is a switching element capable of conducting and interrupting conduction between the first main electrode 40b and the second main electrode 40c. The first main electrode 40b and the plurality of signal electrodes 40d are located on one surface of the semiconductor substrate 40a, and the second main electrode 40c is located on the other surface of the semiconductor substrate 40a.

Although not particularly limited, the second semiconductor element 40 in this embodiment is a switching element and has an IGBT structure 40e. The first main electrode 40b is connected to the emitter of the IGBT structure 40e, the second main electrode 40c is connected to the collector of the IGBT structure 40e, and the signal electrode 40d is connected to the gate of the IGBT structure 40e. there is In addition, the second semiconductor device 40 has a diode structure 40f connected in parallel with the IGBT structure 40e. The first main electrode 40b is connected to the anode of the diode structure 40f and the second main electrode 40c is connected to the cathode of the diode structure 40f. As another embodiment, the second semiconductor element 40 may have a MOSFET structure. In this case, the first main electrode 40b is connected to the source of the MOSFET structure, the second main electrode 40c is connected to the drain of the MOSFET structure and the signal electrode 40d is connected to the gate of the MOSFET structure.

In this embodiment, the first semiconductor element 20 and the second semiconductor element 40 are semiconductor elements of the same type. However, they are not limited to the same type, and the first semiconductor element 20 and the second semiconductor element 40 may be different types of semiconductor elements. The specific configurations of the first semiconductor element 20 and the second semiconductor element 40 are not particularly limited, and various semiconductor elements can be employed as the first semiconductor element 20 and the second semiconductor element 40 . Materials constituting the semiconductor substrates 20a and 40a of the first semiconductor element 20 and the second semiconductor element 40 are not particularly limited, and various semiconductors such as silicon (Si), silicon carbide (SiC), or gallium nitride (GaN) can be used. materials can be employed.

The semiconductor device 10 includes a plurality of conductor plates 22 , 26 , 42 , 46 , first conductor spacers 24 and second conductor spacers 44 . The first conductor spacer 24 and the second conductor spacer 44 have a generally block shape and are formed using a conductor material such as copper or other metal. The first conductor spacer 24 has an upper surface 24a and a lower surface 24b opposite the upper surface 24a. The conductor spacers 24, 44 are not necessarily required, but secure spaces for connecting the first signal terminals 12 and the second signal terminals 13, which will be described later, to the signal electrodes 20d, 40d.

The plurality of conductor plates 22, 26, 42, 46 generally have plate shapes. The plurality of conductor plates 22, 26, 42, 46 are formed using a conductor material such as copper or other metal. The plurality of conductor plates 22 , 26 , 42 , 46 includes a first lower conductor plate 22 , a first upper conductor plate 26 , a second lower conductor plate 42 and a second upper conductor plate 46 . The first lower conductor plate 22 has an upper surface 22a, a lower surface 22b opposite to the upper surface 22a, and side surfaces extending between the upper surface 22a and the lower surface 22b. Similarly, the first upper conductor plate 26 has an upper surface 26a, a lower surface 26b opposite to the upper surface 26a, and side surfaces extending between the upper surface 26a and the lower surface 26b. The first lower conductor plate 22 and the first upper conductor plate 26 face each other with the first semiconductor element 20 interposed therebetween. interposed in between.

As an example, the upper surface 22a of the first lower conductor plate 22 and the second main electrode 20c of the first semiconductor element 20 are joined to each other via the solder layer 21 . Thereby, the first lower conductor plate 22 is electrically and thermally connected to the first semiconductor element 20 . Similarly, the first main electrode 20b of the first semiconductor element 20 and the lower surface 24b of the first conductor spacer 24 are joined to each other via the solder layer 23, and the upper surface 24a of the first conductor spacer 24 and , and the lower surface 26 b of the first upper conductor plate 26 are joined to each other via a solder layer 25 . Thereby, the first upper conductor plate 26 is electrically and thermally connected to the first semiconductor element 20 via the first conductor spacers 24 . However, the bonding between these constituent members is not limited to solder layers, and may be bonded via other types of conductive bonding layers. Here, the first lower conductor plate 22 is an example of the first conductor plate in the technology disclosed in this specification, and the first upper conductor plate 26 is an example of the second conductor plate in the technology disclosed in this specification. An example.

The second lower conductor plate 42 has an upper surface 42a, a lower surface 42b located opposite to the upper surface 42a, and side surfaces extending between the upper surface 42a and the lower surface 42b. Similarly, the second upper conductor plate 46 has an upper surface 46a, a lower surface 46b opposite to the upper surface 46a, and side surfaces extending between the upper surface 46a and the lower surface 46b. The second lower conductor plate 42 and the second upper conductor plate 46 face each other with the second semiconductor element 40 interposed therebetween. interposed in between.

As an example, the upper surface 42 a of the second lower conductor plate 42 and the second main electrode 40 c of the second semiconductor element 40 are joined to each other via the solder layer 41 . Thereby, the second lower conductor plate 42 is electrically and thermally connected to the second semiconductor element 40 . Similarly, the first main electrode 40b of the second semiconductor element 40 and the lower surface 44b of the second conductor spacer 44 are joined to each other via the solder layer 43, and the upper surface 44a of the second conductor spacer 44 and , and the lower surface 46 b of the second upper conductor plate 46 are joined to each other via a solder layer 45 . Thereby, the second upper conductor plate 46 is electrically and thermally connected to the second semiconductor element 40 via the second conductor spacers 44 . However, the joining between these constituent members is not limited to the solder layer, and may be joined through other types of conductive joining layers. Here, the second lower conductor plate 42 is an example of the third conductor plate in the technology disclosed in this specification, and the second upper conductor plate 46 is an example of the fourth conductor plate in the technology disclosed in this specification. An example.

The first lower conductor plate 22 and the second lower conductor plate 42 are arranged along the first main surface 18a of the encapsulant 18, and their lower surfaces 22b, 42b extend along the first main surface 18a of the encapsulant 18. It is exposed at main surface 18a. One side surface 42 c of the second lower conductor plate 42 faces the first lower conductor plate 22 inside the sealing body 18 . Similarly, the first upper conductor plate 26 and the second upper conductor plate 46 are arranged along the second main surface 18b of the encapsulant 18, and their upper surfaces 26a, 46a are located along the second main surface 18b of the encapsulant 18. It is exposed at the two major surfaces 18b. One side surface 26 c of the first upper conductor plate 26 faces the second upper conductor plate 46 inside the sealing body 18 . The semiconductor device 10 of this embodiment has a double-sided cooling structure in which the conductor plates 22, 26, 42, 46 are exposed on both main surfaces 18a, 18b of the sealing body 18 and function as heat sinks. Here, although not particularly limited, the first main surface 18a and the second main surface 18b of the sealing body 18 are planes parallel to each other.

Semiconductor device 10 further includes a joint structure 30 . The joint structure 30 connects the first upper conductor plate 26 and the second lower conductor plate 42 to each other. By way of example only, the joint structure 30 includes a first joint portion 28 and a second joint portion 48 . The first joint portion 28 extends from one side surface 26 c of the first upper conductor plate 26 toward the second upper conductor plate 46 . The first joint portion 28 of this embodiment is provided integrally with the first upper conductor plate 26, but is not limited to this. The first joint portion 28 may be prepared as a member separate from the first upper conductor plate 26 and joined to the first upper conductor plate 26 . The second joint portion 48 extends from one side surface 42 c of the second lower conductor plate 42 toward the first lower conductor plate 22 . The second joint portion 48 of this embodiment is provided integrally with the second lower conductor plate 42, but is not limited to this. The second joint portion 48 may be prepared as a member separate from the second lower conductor plate 42 and joined to the second lower conductor plate 42 . The first joint portion 28 faces the second joint portion 48 . However, the range in which the first joint portion 28 faces the second joint portion 48 is not particularly limited, and may at least partially face the second joint portion 48 .

A semiconductor device 10 includes a plurality of external connection terminals 12 , 13 , 14 , 15 and 16 . Each external connection terminal 12 , 13 , 14 , 15 , 16 is made of a conductor such as copper or other metal, and extends inside and outside the sealing body 18 . The plurality of external connection terminals 12, 13, 14, 15, and 16 include a plurality of first signal terminals 12, a plurality of second signal terminals 13, a first power terminal 14, a second power terminal 15, and a third power terminal. terminals 16 are included. As an example, the first power terminal 14 and the second power terminal 15 protrude from the first end surface 18c of the encapsulant 18, and the third power terminal 16 and the plurality of signal terminals 12, 13 protrude from the encapsulant. 18 protruding from the second end face 18d.

The first signal terminal 12 is joined to the signal electrode 20d of the first semiconductor element 20 via a solder layer (not shown). That is, the first signal terminal 12 is electrically connected to the signal electrode 20 d of the first semiconductor element 20 . The second signal terminal 13 is joined to the signal electrode 40d of the second semiconductor element 40 via a solder layer (not shown). That is, the second signal terminal 13 is electrically connected to the signal electrode 40 d of the second semiconductor element 40 . The bonding between the first signal terminal 12 and the signal electrode 20d and between the second signal terminal 13 and the signal electrode 40d is not limited to the solder layer, and other types of conductive bonding layers may be used. may be joined via

The first power terminal 14 and the second power terminal 15 generally have a wide plate shape. The first power terminal 14 is connected to the first lower conductor plate 22 . The second power terminal 15 is connected to the second upper conductor plate 46 . The third power terminal 16 generally has a plate shape and has a wide distal end portion 16a and a base end portion 16b elongated from the distal end portion 16a. The third power terminal 16 is connected to the first upper conductor plate 26 and the second lower conductor plate 42 at its base end 16b. Accordingly, the first power terminal 14 , the second power terminal 15 and the third power terminal 16 are electrically connected to the first semiconductor element 20 and the second semiconductor element 40 . The first power terminal 14 and the second power terminal 15 are connected to the high-potential side and the low-potential side of an external DC power supply (not shown), respectively. ). Thereby, the semiconductor device 10 can constitute a part of an inverter circuit, for example. Here, the third power terminal 16 constitutes a part of the joint structure 30 and is an example of a joint member in the technique disclosed in this specification. Hereinafter, the third power terminal 16 is also referred to as the joint member 16 .

In Example 1, the semiconductor device 10 has a joint structure 30 . If the joint structure 30 exists inside the semiconductor device 10, the size of the semiconductor device 10 tends to increase accordingly. Regarding this point, in the semiconductor device 10 of the present embodiment, the base end portion 16b of the third power terminal 16 is positioned between the first joint portion 28 and the second joint portion 48, and the first joint portion 28 and the second joint portion 48 via the first joint solder layer 27 or the second joint solder layer 47 . That is, the first joint portion 28 and the second joint portion 48 are connected to each other via the base end portion 16 b of the third power terminal 16 . According to such a configuration, in the joint structure 30, the joint member 16 and the third power terminal 16 can be configured as a single member, and the number of parts can be reduced and the size of the semiconductor device 10 can be reduced. can. Note that the base end portion 16b of the third power terminal 16 is an example of a common plate-like portion of the joint member 16 in the present technology. Also, the joint between the base end portion 16b of the third power terminal 16 and the first joint portion 28 and the joint between the base end portion 16b of the third power terminal 16 and the second joint portion 48 is formed by a joint solder layer. It is not limited to 27 and 47, and may be joined via other types of conductive joining layers.

The joint member 16 may be formed integrally with the base end portion 16b of the third power terminal 16 as described above, and is not limited to the third power terminal 16, and may be other power terminals (for example, the power terminal 14, 15) may be integrally formed. The joint member 16 may be configured to function as a power terminal for electrically connecting the first semiconductor element 20 or the second semiconductor element 40 to an external circuit.

In the semiconductor device 10 of this embodiment, the first upper conductor plate 26 and the second upper conductor plate 46 are arranged along the second main surface 18b of the sealing body 18. The second lower conductor plate 42 is arranged along the first main surface 18 a of the sealing body 18 . The first joint portion 28 extends toward the second upper conductor plate 46 from one side surface 26 c of the side surfaces of the first upper conductor plate 26 that faces the second upper conductor plate 46 . Similarly, the second joint portion 48 extends toward the first lower conductor plate 22 from one side surface 42 c of the side surfaces of the second lower conductor plate 42 that faces the first lower conductor plate 22 . . The base end portion 16 b of the third power terminal 16 is located between the first joint portion 28 and the second joint portion 48 , and the joint portions 28 , 48 are located at the base end of the third power terminal 16 . They are connected to each other via the portion 16b. With such a configuration, the joint structure 30 can be configured simply. For example, each of the first joint portion 28 and the second joint portion 48 can be formed in a flat plate shape. Since the joint portions 28 and 48 do not require a complicated shape, the joint structure 30 can be made small, and the size of the semiconductor device 10 can be reduced.

In the semiconductor device 10 of this embodiment, the thickness of the first joint portion 28 is smaller than the thickness of the first upper conductor plate 26 . Similarly, the thickness of the second joint portion 48 is smaller than the thickness of the second lower conductor plate 42 . When the thickness of the first joint portion 28 and the second joint portion 48 is small, the thermal stress generated in the joint structure 30 can be reduced when the semiconductor device 10 operates and generates heat. The specific thicknesses of the first joint portion 28 and the second joint portion 48 can be appropriately designed.

In the semiconductor device 10 of this embodiment, the first power terminal 14 and the second power terminal 15 protrude parallel to each other from the first end surface 18c of the sealing body 18 . Currents flow in opposite directions between the first power terminal 14 and the second power terminal 15 . When two such terminals 14, 15 are placed next to each other, the magnetic fields created by the currents flowing through each terminal 14, 15 cancel each other out. Thereby, the inductance of the semiconductor device 10 is reduced.

In the semiconductor device 10 of this embodiment, the third power terminal 16 protrudes from the second end face 18d of the sealing body 18 located on the opposite side of the first end face 18c. With such a configuration, the semiconductor device 10 can be made smaller than when the three terminals 14, 15, and 16 protrude from the same side surface (for example, the first end surface 18c) of the sealing body 18. while the size of each terminal 14, 15, 16 can be increased. Additionally or alternatively, the spacing between the first power terminal 14 and the second power terminal 15 can be designed relatively freely.

In the semiconductor device 10 of this embodiment, the first semiconductor element 20 is mounted between the first lower conductor plate 22 and the first upper conductor plate 26 . However, it is not limited to this, and two or more semiconductor elements may be mounted between the first lower conductor plate 22 and the first upper conductor plate 26 . Similarly, the second semiconductor element 40 is mounted between the second lower conductor plate 42 and the second upper conductor plate 46 . However, it is not limited to this, and two or more semiconductor elements may be mounted between the second lower conductor plate 42 and the second upper conductor plate 46 .

Here, one usage example of the semiconductor device 10 will be described with reference to FIG. As shown in FIG. 5, the third power terminal 16, the first signal terminal 12, and the second signal terminal 13 may be bent in the Z direction and connected to an external device. The external device here indicates, for example, a control board or the like that controls the semiconductor device 10 . At this time, the bending positions of the third power terminal 16 and the first signal terminal 12 and the second signal terminal 13 are preferably separated from each other. In this case, a spatial distance is formed between the third power terminal 16 and the first signal terminal 12 and the second signal terminal 13, so that mutual insulation can be ensured.

The configurations of the joint structure 30 and the third power terminal 16 are not limited to the embodiments described above, and can be configured according to various embodiments. Other embodiments are described in the examples below.

(Embodiment 2) A semiconductor device 100 of Embodiment 2 will be described with reference to FIG. As shown in FIG. 6, the semiconductor device 100 of Example 2 differs from the semiconductor device 10 of Example 1 in the structures of the first upper conductor plate 126, the second lower conductor plate 142, and the joint structure 130. It is Configurations other than the second lower conductor plate 142 and the joint structure 130 can be configured in the same manner as in the first embodiment, and redundant description will be omitted here.

In the semiconductor device 100 of Example 2, one or both of the first upper conductor plate 126 and the second lower conductor plate 142 are enlarged, and a part of the first upper conductor plate 126 becomes the second lower conductor. It faces part of the plate 142 . The joint structure 130 is located between the mutually facing portions of the first upper conductor plate 126 and the second lower conductor plate 142 . In joint structure 130 , base end portion 16 b of third power terminal 16 is joined to first upper conductor plate 126 via first joint solder layer 127 . Also, the base end portion 16 b of the third power terminal 16 is joined to the second lower conductor plate 142 via a second joint solder layer 147 . That is, the joint structure 130 in this embodiment does not have the first joint portion 28 and the second joint portion 48 described in the first embodiment.

Accordingly, in the semiconductor device 100 according to the second embodiment, the joint member 16 and the third power terminal 16 can be configured as a single member in the joint structure 130, like the semiconductor device 10 according to the first embodiment. As a result, the number of components can be reduced and the size of the semiconductor device 100 can be reduced. The joint between the base end portion 16b of the third power terminal 16 and the first upper conductor plate 126 and the joint between the base end portion 16b of the third power terminal 16 and the second lower conductor plate 142 is It is not limited to the joint solder layers 127 and 147, and may be joined through other types of conductive joining layers.

(Embodiment 3) A semiconductor device 200 of Embodiment 3 will be described with reference to FIG. As shown in FIG. 7, in the semiconductor device 200 of Example 3, the configuration of the third power terminal 216 (that is, the joint member 216) is changed as compared with the semiconductor device 10 of Example 1. FIG. Specifically, in the direction in which the semiconductor elements 20 and 40 are arranged (the X direction in the drawing), the dimension of the base end portion 216b of the third power terminal 216 is the same as the dimension of the first joint portion 28 and the second joint portion 48. less than Also in the present embodiment, the base end portion 216b of the third power terminal 216 is positioned between the first joint portion 28 and the second joint portion 48, and is located between the first joint portion 28 and the second joint portion. 48 via the first joint solder layer 227 or the second joint solder layer 247 .

Therefore, in the semiconductor device 200 according to the third embodiment, the joint member 216 and the third power terminal 216 can be configured as a single member in the joint structure 30, similarly to the semiconductor device 10 according to the first embodiment. As a result, the number of components can be reduced and the size of the semiconductor device 200 can be reduced. The joint between the base end portion 216b of the third power terminal 216 and the first upper conductor plate 26 and the joint between the base end portion 216b of the third power terminal 216 and the second lower conductor plate 42 is It is not limited to the joint solder layers 227 and 247, and may be joined through other types of conductive joining layers.

In the semiconductor device 200 of Example 3, the first joint portion 28 is joined to the base end portion 216 b of the third power terminal 216 via the first joint solder layer 227 . In this case, the area where the first joint solder layer 227 contacts the first joint portion 28 is larger than the area where the first joint solder layer 227 contacts the base end portion 216b. With such a configuration, the first joint solder layer 227 forms a good fillet shape, and the first joint portion 28 and the proximal end portion 216b of the third power terminal 216 are firmly joined together. Although not particularly limited, the fillet angle of the first joint solder layer 227 is preferably an acute angle (that is, less than 90 degrees). Similarly, the second joint portion 48 is joined to the base end portion 216b of the third power terminal 216 via a second joint solder layer 247. As shown in FIG. In this case, the area where the second joint solder layer 247 contacts the second joint portion 48 is larger than the area where the second joint solder layer 247 contacts the base end portion 216b. With such a configuration, the second joint solder layer 247 forms a good fillet shape, and the joint between the second joint portion 48 and the base end portion 216b of the third power terminal 216 is firmly joined. The second joint solder layer 247 is also not particularly limited, but preferably has an acute fillet angle (that is, less than 90 degrees).

(Embodiment 4) A semiconductor device 300 of Embodiment 4 will be described with reference to FIGS. As shown in FIGS. 8 and 9, the semiconductor device 300 of Example 4 further includes a pair of laminated substrates 332 and 336 each having insulating substrates 334 and 338, unlike the semiconductor device 10 of Example 1. ing. As will be described later, part of the pair of laminated substrates 332 and 336 corresponds to each of the conductor plates 22, 26, 42 and 46 in the first embodiment. Furthermore, in the fourth embodiment, the joint structure 330, particularly the structure of the joint member 316, is changed from the first embodiment. Here, the joint member 316 is formed integrally with the third power terminal 316 as in the first embodiment. Further, in Example 1, the signal terminals 12 and 13 are electrically connected to the signal electrodes 20d and 40d via conductive bonding layers such as solder layers. In contrast, in Example 4, the signal terminals 312 and 313 are electrically connected to the signal electrodes 20d and 40d via conductive members such as bonding wires. Along with this, the signal terminals 312 and 313 are formed relatively short in length by the amount replaced by the bonding wires.

It should be noted that other parts of the semiconductor device 300 of the fourth embodiment other than the laminated substrates 332 and 336, the joint structure 330, the third power terminal 316, and the signal terminals 312 and 313 are the same as those of the semiconductor device 10 of the first embodiment. It can be configured in the same way, and redundant description will be omitted.

The semiconductor device 300 includes a lower multilayer substrate 332 and an upper multilayer substrate 336 facing each other with the first semiconductor element 20 and the second semiconductor element 40 interposed therebetween. The lower laminated substrate 332 has a third lower conductor plate 335 in addition to the lower insulating substrate 334 , the first lower conductor plate 22 and the second lower conductor plate 42 . In the lower laminated substrate 332, the first lower conductor plate 22 and the second lower conductor plate 42 are provided on one surface (on the side of the semiconductor elements 20, 40) of the lower insulating substrate 334. A third lower conductor plate 335 is provided on the other side (the side opposite to the semiconductor elements 20 and 40) of the side insulating substrate 334 . In the upper laminated substrate 336, the first upper conductor plate 26 and the second upper conductor plate 46 are provided on one surface of the upper insulating substrate 338 (on the side of the semiconductor elements 20 and 40). A third upper conductor plate 339 is provided on the other surface (the side opposite to the semiconductor elements 20 and 40).

As described above, the conductive plates 22 , 26 , 42 , 46 on one side of each laminated substrate 332 , 336 are electrically and thermally connected to the first semiconductor element 20 or the second semiconductor element 40 inside the encapsulant 18 . properly connected. Conductive plates 335 and 339 on the other surfaces of the laminated substrates 332 and 336 are exposed to the main surfaces 18 a and 18 b of the sealing body 18 , although not particularly limited thereto.

The laminated substrates 332 and 336 are, for example, DBC (Direct Bonded Copper) substrates. The insulating substrates 334, 338 are constructed using a ceramic material such as aluminum oxide, silicon nitride, aluminum nitride, or the like. The third lower conductor plate 335 and the third upper conductor plate 339 are made of copper, like the other conductor plates 22, 26, 42, 46. However, the specific configuration of the laminated substrates 332 and 336 is not particularly limited. The laminate substrates 332 and 336 may employ, for example, a DBA (Direct Bonded Aluminum) substrate, an AMB (Active Metal Brazed Copper) substrate, or other types of laminate substrates.

Coupling structure 330 includes a proximal end 316b of a third power terminal 316 (i.e., a coupling member 316) that connects first upper conductive plate 26 to second lower conductive plate 42 via proximal end 316b. It is connected. The third power terminal 316 has a wide distal end 316a and a proximal end 316b extending from the distal end 316a. As an example, between the distal end portion 316a and the proximal end portion 316b, a constricted portion having a width dimension in the X direction relatively smaller than the width dimension of the distal end portion 316a and the proximal end portion 316b is provided. there is One end of the base end portion 316 b partially faces the first upper conductor plate 26 , and the other end partially faces the second lower conductor plate 42 .

The third power terminal 316 has, at the base end portion 316b, a first joint surface BA1 joined to the first upper conductor plate 26 via the first joint solder layer 327, a second lower conductor plate 42, and a second joint surface BA1. and a second bonding surface BA2 bonded via a solder layer 347 . Therefore, unlike the joint structure 30 of the first embodiment, the joint structure 330 of the fourth embodiment does not include the first joint portion 28 and the second joint portion 48 . The third power terminal 316 includes a first plate-like portion 316b1 having a first joint surface BA1, a second plate-like portion 316b2 having a second joint surface BA2, and a first plate-like portion 316b1 and a second plate-like portion 316b1. It has an intermediate plate-like portion 316b3 extending between the portion 316b2. Further, the third power terminal 316 has a bent portion 316w at the boundary between the first plate-shaped portion 316b1 and the intermediate plate-shaped portion 316b3 and the boundary between the second plate-shaped portion 316b2 and the intermediate plate-shaped portion 316b3. have. Although it is an example, the first plate-like portion 316b1 and the second plate-like portion 316b2 are bent in opposite directions with respect to the intermediate plate-like portion 316b3. The joint between the base end portion 316b of the third power terminal 316 and the first upper conductor plate 26 and the joint between the base end portion 316b of the third power terminal 316 and the second lower conductor plate 42 is It is not limited to the joint solder layers 327 and 347, and may be joined through other types of conductive joining layers.

In the semiconductor device 300 according to the fourth embodiment, by providing the third power terminal 316 with the bent portion 316w, the deformability (property of deforming according to external force) in the third power terminal 316 can be enhanced. Accordingly, when the components of the semiconductor device 300 are combined, the third power terminal 316 can be flexibly deformed according to the positional relationship between the first upper conductor plate 26 and the second lower conductor plate 42. can. The flexible deformation of the third power terminal 316 allows the first upper conductor plate 26 and the second lower conductor plate 42 to be aligned with the opposing first lower conductor plate 22 or the second upper conductor plate 46 . You can avoid tilting. Also, when the semiconductor device 300 is in use, the third power terminal 316 is flexibly deformed according to thermal expansion occurring in the semiconductor device 300, so that the stress generated inside the semiconductor device 300 is relieved.

The third power terminal 316 in the fourth embodiment has at least the boundary between the first plate-shaped portion 316b1 and the intermediate plate-shaped portion 316b3 and the boundary between the second plate-shaped portion 316b2 and the intermediate plate-shaped portion 316b3. One side may have a bent portion 316w. However, the specific configuration of the third power terminal 316 is not particularly limited, and can be appropriately changed and designed according to the positional relationship between the first upper conductor plate 26 and the second lower conductor plate 42 .

Various variations on the third power terminal 316 (particularly the proximal end 316b) are described with reference to FIGS. 10-17. As shown in FIGS. 10 and 11, the third power terminal 316 has a boundary between the first plate-shaped portion 316b1 and the intermediate plate-shaped portion 316b3 and a boundary between the second plate-shaped portion 316b2 and the intermediate plate-shaped portion 316b3. In addition to the boundary between them, the intermediate plate-like portion 316b3 may also have at least one (here, two) bends 316w. In this case, constricted portions may be provided at both ends between the distal end portion 316a and the proximal end portion 316b of the intermediate plate-shaped portion 316b3. Alternatively, as shown in FIGS. 12 and 13, the constricted portion may not be provided between the distal end portion 316a and the proximal end portion 316b of the intermediate plate-like portion 316b3. That is, the width dimension of the third power terminal 316 may be substantially constant from the distal end portion 316a to the proximal end portion 316b.

Further, in the third power terminal 316 according to the fourth embodiment, the first plate-like portion 316b1 and the second plate-like portion 316b2 are bent in opposite directions with respect to the intermediate plate-like portion 316b3 at the base end portion 316b. . The third power terminal 316 is not limited to this shape, and as shown in FIGS. You may have

Alternatively, as shown in FIGS. 16 and 17, the third power terminal 316 may not have the intermediate plate-like portion 316b3. In this case, the first plate-like portion 316b1 and the second plate-like portion 316b2 are connected inside the sealing body 18 in a region that does not face the conductor plates 22, 26, 42, 46. FIG.

In the semiconductor device 300 according to the fourth embodiment, the first lower conductor plate 22 and the second lower conductor plate 42 are provided on a common insulating substrate 334, and the first upper conductor plate 26 and the second upper conductor plate 46 are It is provided on a common insulating substrate 338 . The conductor plates 22, 26, 42, 46 may be provided on different insulating substrates, or at least one of the plurality of conductor plates 22, 26, 42, 46 may be an insulating substrate. may be provided above.

In the semiconductor device 300 according to the fourth embodiment, the third power terminal 316 has the first bonding surface BA1 and the second bonding surface BA2 in plan view in the thickness direction (that is, the Z direction) of the first semiconductor element 20. , extending across a straight line SL passing through the respective centers of the first semiconductor element 20 and the second semiconductor element 40 . With such a configuration, the distance from the third power terminal 316 to each semiconductor element 20, 40 can be relatively shortened, and the inductance in the current path can be reduced.

Further, in the semiconductor device 300 of the fourth embodiment, the joint member 316 is integrally formed with the third power terminal 316, like the semiconductor device 10 of the first embodiment. That is, in the joint structure 330, the joint member 316 and the third power terminal 316 can be constructed as a single member. As a result, the number of parts can be reduced and the size of the semiconductor device 300 can be reduced.

In the semiconductor devices 10, 100, 200, 300 including the joint structures 30, 130, 330 described in the previous embodiment 1-4, the semiconductor devices 10, 100, 200 , 300 is increased, which may lead to complication of the manufacturing process such as an increase in the number of man-hours.

In order to solve the above problems, the semiconductor devices 10, 100, 200, and 300 of the present embodiment provide the first semiconductor element 20 and the second semiconductor element 40, and the sealing structure for sealing the first semiconductor element 20 and the second semiconductor element 40. and a stop body 18 . A semiconductor device 10 , 100 , 200 , 300 includes a first lower conductor plate 22 , a first upper conductor plate 26 , 126 , a second lower conductor plate 42 , 142 and a second upper conductor plate 46 . The first lower conductor plate 22 and the first upper conductor plates 26 , 126 face each other with the first semiconductor element 20 interposed therebetween, and are electrically connected to the first semiconductor element 20 inside the sealing body 18 . ing. The second lower conductor plates 42 , 142 and the second upper conductor plate 46 face each other with the second semiconductor element 40 interposed therebetween, and are electrically connected to the second semiconductor element 40 inside the sealing body 18 . ing. The semiconductor device 10 also includes joint structures 30 , 130 , 330 for electrically connecting the first upper conductor plates 26 , 126 and the second lower conductor plates 42 , 142 to each other inside the sealing body 18 . and the joint structure 30 includes at least one joint member 16, 216, 316 (i.e., the third power terminal 16, 216, 316), a portion of which joint member 16, 216, 316 is the seal 18. located outside the

With such a configuration, the joint members 16, 216, and 316 can be supported from the outside of the sealing body 18 in the sealing step of forming the sealing body 18, and the sealing structure can be easily formed with high accuracy. In addition, although not particularly limited, the joint members 16, 216, and 316 together with other components (for example, the power terminals 14 and 15 and the signal terminals 12, 13, 312, 313, etc.) located outside the sealing body 18, It can be prepared as one member (so-called lead frame). This prevents the manufacturing process of the semiconductor devices 10, 100, 200, and 300 from becoming complicated.

(Embodiment 5) A semiconductor device 400 of Embodiment 5 will be described with reference to FIG. As shown in FIG. 18 , a semiconductor device 400 of Example 5 includes a joint structure 430 including a first joint portion 28 , a second joint portion 48 and a joint member 417 . The joint member 417 is formed of a member separate from the third power terminal 416, and is different from the semiconductor devices 10, 100, 200, and 300 in the other embodiments described above in this respect. Accordingly, joint structure 430 does not include third power terminal 416 . Along with this, the structure of the third power terminal 416 is also changed, the third power terminal 416 is connected to the second lower conductor plate 42 inside the sealing body 18, and the first power terminal 14 And like the second power terminal 15 , it protrudes from the first end face 18 c of the sealing body 18 .

Configurations other than the joint structure 430 and the third power terminal 416 in the semiconductor device 400 of Example 5 can be appropriately configured based on Examples 1 and 4, and redundant description will be omitted. Although not shown, the connection between the joint member 417 and the first joint portion 28 and between the joint member 417 and the second joint portion 48 are performed via a conductive joining layer such as a solder layer. May be joined.

The joint member 417 connects the first upper conductor plate 26 and the second lower conductor plate 42 inside the sealing body 18 . Along with that, a portion of the joint member 417 is located outside the sealing body 18 . Although it is an example, a part of the joint member 417 protrudes from the second end face 18d of the sealing body 18 . However, a part of the joint member 417 need not protrude, and may be exposed from the sealing body 18 (second end face 18d in this embodiment). The joint member 417 in this embodiment need not function as a terminal outside the sealing body 18 .

Even with such a configuration, the joint member 417 can be supported from the outside of the sealing body 18 in the sealing process for forming the sealing body 18, and the sealing structure can be easily formed with high accuracy. Also, although not particularly limited, the joint member 417 may be combined with other components (for example, power terminals 14, 15, 416, signal terminals 312, 313, etc.) located outside the sealing body 18 into one member (so-called lead). frame) can be prepared. This prevents the manufacturing process of the semiconductor device 400 from becoming complicated.

Although several specific examples have been described in detail above, these are merely examples and are not intended to limit the scope of the claims. The technology described in the claims includes various modifications and changes of the specific examples illustrated above. The technical elements described in this specification or drawings exhibit technical usefulness alone or in various combinations.

10, 100, 200, 300, 400: semiconductor devices 12, 13, 312, 313: signal terminals 14: first power terminals 15: second power terminals 16, 216, 316, 416: third power terminals 16a, 316a: Tip portions 16b, 216b, 316b: base end portion 18: sealing body 18a: first main surface 18b: second main surface 18c: first end face 18d: second end faces 20, 40: semiconductor elements 20a, 40a: semiconductor substrate 20b, 40b: first main electrodes 20c, 40c: second main electrodes 20d, 40d: signal electrodes 20e, 40e: IGBT structures 20f, 40f: diode structures 21, 23, 25, 41, 43, 45: solder layer 22: First lower conductor plates 24, 44: conductor spacers 26, 126: first upper conductor plate 26c: side surfaces 27, 127, 227, 327: first joint solder layer 28: first joint portions 30, 130, 330, 430 : joint structures 42, 142: second lower conductor plate 42c: side surface 46: second upper conductor plate 48: second joint portion 316b1: first plate-shaped portion 316b2: second plate-shaped portion 316b3: intermediate plate-shaped portion 316w : bent portions 332, 336: laminated substrates 334, 338: insulating substrates 47, 147, 247, 347: second joint solder layer 417: joint members BA1, BA2: joints

Claims (25)

a first semiconductor element and a second semiconductor element;
a sealing body that integrally seals the first semiconductor element and the second semiconductor element;
a first conductor plate and a second conductor plate facing each other across the first semiconductor element and electrically connected to the first semiconductor element inside the sealing body;
a third conductor plate and a fourth conductor plate facing each other across the second semiconductor element and electrically connected to the second semiconductor element inside the sealing body;
a joint structure that electrically connects the second conductor plate and the third conductor plate to each other inside the sealing body,
The joint structure includes at least one joint member, the joint member having a proximal end portion electrically connecting the second conductor plate and the third conductor plate to each other inside the sealing body; a distal end extending from the proximal end to the outside of the sealing body,
semiconductor equipment. 2. The distal end portion of the joint member positioned outside the encapsulant functions as a power terminal for electrically connecting the first semiconductor element or the second semiconductor element to an external circuit. The semiconductor device according to . The base end portion of the joint member includes a first joint surface joined to the second conductor plate inside the sealing body, and a second joint surface joined to the third conductor plate inside the sealing body. 3. The semiconductor device according to claim 1, further comprising a bonding surface. The base end portion of the joint member includes a first plate-like portion having the first joint surface, a second plate-like portion having the second joint surface, and the first plate-like portion and the second plate-like portion. 4. The semiconductor device according to claim 3, further comprising an intermediate plate-like portion extending between said portions. The base end portion of the joint member includes at least one of a boundary between the first plate-shaped portion and the intermediate plate-shaped portion and a boundary between the second plate-shaped portion and the intermediate plate-shaped portion. 5. The semiconductor device according to claim 4, further comprising a bent portion. 6. The semiconductor device according to claim 5, wherein said first plate-like portion and said second plate-like portion are bent in the same direction with respect to said intermediate plate-like portion. 6. The semiconductor device according to claim 5, wherein said first plate-like portion and said second plate-like portion are bent in directions opposite to each other with respect to said intermediate plate-like portion. 8. The semiconductor device according to claim 6, wherein said base end portion of said joint member has at least one bent portion in said intermediate plate-like portion. 4. The semiconductor device according to claim 3, wherein said base end portion of said joint member has a common plate-like portion having said first joint surface on one side and said second joint surface on the other side. In a plan view in the thickness direction of the first semiconductor element, each of the first bonding surface and the second bonding surface straddles a straight line passing through each center of the first semiconductor element and the second semiconductor element. 10. The semiconductor device according to any one of claims 3 to 9, which extends. a first power terminal connected to the first conductor plate inside the encapsulant and protruding from the encapsulant;
a second power terminal connected to the fourth conductor plate inside the sealing body and protruding from the sealing body;
a third power terminal configured by the distal end portion of the joint member ;
further comprising
2. The semiconductor device according to claim 1. The first conductor plate and the third conductor plate are arranged along a first plane,
The second conductor plate and the fourth conductor plate are arranged along a second plane parallel to the first plane,
12. The semiconductor device according to claim 11. The joint structure is
a first joint portion provided on the second conductor plate and extending from the second conductor plate toward the fourth conductor plate;
a second joint portion provided on the third conductor plate and extending from the third conductor plate toward the first conductor plate;
including
the first joint portion at least partially faces the second joint portion;
The proximal end portion of the joint member constituting the third power terminal is connected to each of the first joint portion and the second joint portion between the first joint portion and the second joint portion. has been
13. The semiconductor device according to claim 11 or 12. The first joint portion extends from one side surface of the second conductor plate facing the fourth conductor plate,
14. The semiconductor device according to claim 13, wherein said second joint portion extends from one side surface of said third conductor plate facing said first conductor plate. 15. The semiconductor device according to claim 13, wherein the thickness of said first joint portion is smaller than the thickness of said second conductor plate. 16. The semiconductor device according to claim 13, wherein the thickness of said second joint portion is smaller than the thickness of said third conductor plate. The first joint portion is joined to the proximal end portion of the joint member constituting the third power terminal via a first joint joining layer,
17. The area according to any one of claims 13 to 16, wherein the first joint bonding layer contacts the first joint portion in a larger area than the first joint bonding layer contacts the base end portion. semiconductor device. The second joint portion is joined to the proximal end portion of the joint member constituting the third power terminal via a second joint joining layer,
18. The area according to any one of claims 13 to 17, wherein the second joint bonding layer contacts the second joint portion in a larger area than the second joint bonding layer contacts the base end portion. semiconductor device. 19. The semiconductor device according to any one of claims 11 to 18, wherein said first power terminal and said second power terminal protrude parallel to each other from a first end surface of said sealing body. 20. The semiconductor device according to claim 19, wherein said third power terminal protrudes from a second end surface of said encapsulant opposite said first end surface. the encapsulant has a first major surface and a second major surface opposite each other and extending between the first end face and the second end face;
the first main surface exposes the first conductor plate and the third conductor plate;
21. The semiconductor device according to claim 20, wherein said second main surface exposes said second conductor plate and said fourth conductor plate. It further comprises an insulating substrate,
21. The method according to any one of claims 1 to 20, wherein at least one of said first conductor plate, said second conductor plate, said third conductor plate and said fourth conductor plate is provided on said insulating substrate. The semiconductor device described. 23. The semiconductor device according to claim 1, wherein each of said first semiconductor element and said second semiconductor element is a switching element. each of the first semiconductor element and the second semiconductor element has an IGBT (Insulated Gate Bipolar Transistor) structure,
the IGBT structure of the first semiconductor element has a collector connected to the first conductor plate and an emitter connected to the second conductor plate;
24. The IGBT structure of the second semiconductor element according to any one of the preceding claims, wherein said IGBT structure has a collector connected to said third conductor plate and an emitter connected to said fourth conductor plate. semiconductor device. each of the first semiconductor element and the second semiconductor element has a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) structure,
the MOSFET structure of the first semiconductor device having a drain connected to the first conductive plate and a source connected to the second conductive plate;
24. The MOSFET structure of any one of claims 1 to 23, wherein the MOSFET structure of the second semiconductor device has a drain connected to the third conductive plate and a source connected to the fourth conductive plate. semiconductor device.

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