JP5217015B2 - Power converter and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a power converter capable of highly efficiently cooling a semiconductor element for converting power without causing upsizing, a cost rise, an increase in thermal resistance, and stress concentration, and to provide a manufacturing method thereof. <P>SOLUTION: The power converter has a first semiconductor element main surface electrode structure 27 which has a semiconductor element 11 having a main surface electrode, a first electrode 15 having insulation members 24 on a rear surface end portion together with a step difference receiving portion 15a for inserting the semiconductor element 11, positioning the main surface substrate on the receiving portion 15a, disposed so as to cover the semiconductor element 11, and bonded to the semiconductor element 11 via the insulation member, a heat spreader 19 having a heat transmission region 19a closely disposed to a wire bonding wire 26 for electrically connecting the main surface electrode and the first electrode 15, and mounted on the main surface electrode to the first electrode 15 via a heat conductive material; a first substrate 13 mounted by solder on each of the rear surfaces of the structure 27 and the insulation member 24; and a first heat radiator 17 having the first substrate 13 mounted via an insulator. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

  The present invention relates to a power conversion device and a method for manufacturing the same, and more particularly to a power conversion device and a method for manufacturing the power conversion device that require sufficient measures against heat generation in order to use a large number of semiconductor elements.

Conventionally, as a power conversion device that generally performs power conversion, for example, a “semiconductor device” (see Patent Document 1) is known.
FIG. 15 is a cross-sectional explanatory view schematically showing the structure of a conventional semiconductor device. As shown in FIG. 15, the conventional semiconductor device 1 has a lower semiconductor element 2 and an upper semiconductor element 3. The lower semiconductor element 2 is mounted on the cooler 6a via an insulating substrate 5a having metal patterns on both sides connected by solder 4a, and the upper semiconductor element 3 is connected on both sides by solder 4b. It is mounted on the cooler 6b through an insulating substrate 5b having a metal pattern.

An electrode 7 a is mounted on the main surface electrode of the lower semiconductor element 2, and a cooler 6 b is placed on the electrode 7 a via an insulating material 8 a, and on the main surface electrode of the upper semiconductor element 3. An electrode 7b is mounted, and a cooler 6c is placed on the electrode 7b via an insulating material 8b.
The conventional semiconductor device 1 has the coolers 6a, 6b, and 6c on the front surface side and the back surface side of the lower semiconductor element 2 and the upper semiconductor element 3, respectively, thereby improving the cooling performance and suppressing the temperature rise. Yes. In addition, the planar size is reduced by forming a stacked structure in which the semiconductor elements 2 and 3 are stacked one above the other.
JP 2001-244407 A

However, the conventional semiconductor device 1 has the following problems.
In order to cool both surfaces of the semiconductor element 2 or 3, it is necessary to join a cooler or a heat radiator with less thermal resistance on both surfaces of the semiconductor element. When each member is fixedly held, stress is likely to be generated between the members, but it is difficult to take measures to alleviate the generated stress or prevent the stress itself. In particular, when an electrode surface connected to the live potential is formed on the plane of the semiconductor element, it is very difficult to join the electrode surface, the cooler, and the heat radiating body with little thermal resistance.
An object of the present invention is to provide a power conversion device capable of efficiently cooling a semiconductor element that performs power conversion from the electrode surface without increasing thermal resistance and causing stress concentration, and a method for manufacturing the same. .

In order to achieve the above object, a power conversion device according to the present invention has a semiconductor element having a main surface electrode, and a receiving part into which the semiconductor element is inserted, and has an insulator region at a rear side end part. The main surface electrode is positioned so as to cover a part of the main surface side of the semiconductor element and is joined to the semiconductor element via an insulating member, and the main surface electrode and the upper surface electrode are arranged A semiconductor element main surface having a heat transfer region disposed in proximity to a wire bonding line to be electrically connected, and a heat spreader mounted on the main surface electrode and the upper surface electrode via a heat conductive material An electrode-side structure, a substrate on which the semiconductor element main surface electrode-side structure and the insulator region are soldered and mounted, and a radiator on which the substrate is mounted via an insulator. .

According to the present invention, the semiconductor element main surface electrode side structure has a semiconductor element having a main surface electrode, and a receiving portion into which the semiconductor element is inserted, and has an insulating region at the back surface side end portion, and the receiving portion has a main surface. An electrode is positioned so as to cover a part of the main surface side of the semiconductor element, and an upper surface electrode joined to the semiconductor element via an insulating member, and wire bonding for electrically connecting the main surface electrode and the upper surface electrode A heat spreader disposed adjacent to the wire, and having a heat spreader mounted on the main surface electrode and the upper surface electrode via a heat conductive material, the semiconductor element main surface electrode side structure, and A substrate is soldered and mounted on each back surface of the insulator region, and the substrate is mounted on the radiator via the insulator.

As a result, the heat spreader can be disposed on the main surface electrode side of the semiconductor element that performs power conversion without causing an increase in thermal resistance and stress concentration, and can be efficiently cooled.
Moreover, the said power converter device is realizable with the manufacturing method of the power converter device which concerns on this invention.

The best mode for carrying out the present invention will be described below with reference to the drawings.
(First embodiment)
FIG. 1 is a cross-sectional explanatory view showing the configuration of the power conversion device according to the first embodiment of the present invention. FIG. 2 is a cross-sectional explanatory view taken along the line AA of FIG. FIG. 3 shows a cross-sectional structure of each part excluding the insulating layer and the radiator of FIG. 1, (a) is a cross-sectional explanatory view along the line BB, and (b) is a cross-sectional explanatory view along the line CC. .
As shown in FIGS. 1 to 3, the power conversion device 10 includes two first semiconductor elements 11a and 11b, two second semiconductor elements 12a and 12b, a first substrate 13, a second substrate 14, and a first substrate. An electrode (upper surface electrode) 15, a second electrode (upper surface electrode) 16, a first heat radiator 17, a second heat radiator 18, and a heat spreader 19 are formed and stacked in layers.

The first semiconductor element 11a and the first semiconductor element 11b, and the second semiconductor element 12a and the second semiconductor element 12b are arranged side by side and spaced apart from each other. A heat spreader 19 made of a metal body is sandwiched between the two first semiconductor elements 11a and 11b and the two second semiconductor elements 12a and 12b, and outside the first semiconductor elements 11a and 11b, A first heat radiator 17 is located via the first substrate 13, and a second heat radiator 18 is located outside the second semiconductor elements 12 a and 12 b via the second substrate 14.
That is, the two first semiconductor elements 11a and 11b, the first substrate 13 and the first heat radiator 17, and the two second semiconductor elements 12a and 12b, the second substrate 14 and the second heat radiator 18 are composed of the heat spreader 19. With the main surfaces facing each other (up and down in the figure).

On the main surface of the first radiator 17, the first substrate 13 is interposed via the insulating layer 20. On the main surface of the first substrate 13, the first semiconductor elements 11 a and 11 b are connected via the solder layer 21. Each is implemented. On the main surface of the second radiator 18, the second substrate 14 is interposed via the insulating layer 22. On the main surface of the second substrate 14, the second semiconductor elements 12 a and 12 b are interposed via the solder layer 23. Each is implemented.
As shown in FIG. 2, the first electrode 15 located on the main surface side of the first semiconductor elements 11a and 11b has a step that allows the first semiconductor elements 11a and 11b to enter inside the back surface (side surface of the first radiator 17). The first electrode 15 is disposed so as to cover the upper surfaces of the first semiconductor elements 11a and 11b with the step receiving portion 15a. An insulating member (insulator region) 24 is disposed on the back surface of the first electrode 15 outside the stepped receiving portion 15a, and a metal foil is attached to the back surface of the insulating member 24.

Then, the upper surfaces of the first semiconductor elements 11a and 11b, the stepped receiving portions 15a of the first electrode 15 and the side surfaces of the insulating member 24 are joined with an insulating adhesive 25, whereby the first semiconductor elements 11a and 11b are joined. Is fitted into the step receiving portion 15a, and the main surface electrodes of the first semiconductor elements 11a and 11b are covered with the first electrode 15.
Furthermore, the first semiconductor element main surface electrode side structure 27 is formed by electrically connecting the main surface electrodes of the first semiconductor elements 11 a and 11 b and the first electrode 15 with the wire bonding lines 26. The main surface electrodes of the first semiconductor elements 11 a and 11 b and the connection electrodes (not shown) arranged on the first electrodes 15 instead of the first electrodes 15 are electrically connected by wire bonding lines 26. Also good.

  On the lower surface side (first semiconductor element 11a, 11b side) of the heat spreader 19, a comb-like protrusion 19a is formed as a heat transfer region. The protrusion 19a may be provided in order to dispose the wire bonding line 26 in the recess between the adjacent protrusions 19a. The heat spreader 19 is disposed on the main surface of the first semiconductor element main surface electrode-side structure 27 so that the protrusion (heat transfer region) 19a and the wire bonding lines 26 of the first semiconductor elements 11a and 11b are close to each other. To do. Then, the main surface electrodes of the first semiconductor elements 11a and 11b, which are the main surface side of the first semiconductor element main surface electrode side structure 27, the stepped receiving portion 15a vicinity portion of the first electrode 15, and the heat spreader 19 are heated. The conductive member 28 is used for bonding.

Further, the first substrate 13 is connected to the back surfaces of the first semiconductor elements 11a and 11b and the insulating member 24 on the back surface side of the first semiconductor element main surface electrode side structure 27 via the solder layer 21 by soldering. Further, the first substrate 13 is mounted on the first radiator 17 via the insulating layer 20.
The second semiconductor element main body having the same configuration as that of the first semiconductor element main surface electrode-side structure 27 located on the first heat radiator 17 side also on the second radiator 18 side with the heat spreader 19 interposed therebetween. The surface electrode side structure 29 is positioned symmetrically with the first semiconductor element main surface electrode side structure 27 (see FIG. 1).

  The second semiconductor element main surface electrode side structure 29 includes two second semiconductor elements 12 a and 12 b, a second substrate 14, a second electrode 16, a second radiator 18, and a heat spreader 19. The back surfaces of the second semiconductor elements 12a and 12b and the insulating member 30 are mounted on the second substrate 14 via the solder layer 23 by soldering, and further the second substrate 14 is connected to the second substrate 14 via the insulating layer 22. 2 Mount on the radiator 18.

  In addition, the upper surfaces of the second semiconductor elements 12a and 12b, the stepped receiving portions 16a of the second electrode 16 and the side surfaces of the insulating member 30 are joined by an insulating adhesive 31 to join the second semiconductor element 12a. 12b are fitted into the step receiving portion 16a so that the main surface electrodes of the second semiconductor elements 12a and 12b are covered with the second electrode 16, and the main surface electrodes and second electrodes of the second semiconductor elements 12a and 12b are covered. 16 are electrically connected by a wire bonding line 32. Further, the main surface electrodes of the second semiconductor elements 12a and 12b that are the main surface side of the second semiconductor element main surface electrode side structure 29, the stepped receiving portion 16a vicinity portion of the second electrode 16, and the heat spreader 19 are heated. Bonding is performed by the conductive member 33.

  That is, the heat spreader 19 has a protrusion (heat transfer region) 19b similar to the protrusion (heat transfer region) 19a on the lower surface side also on the upper surface side (second semiconductor elements 12a and 12b side). The main surface side of the first semiconductor element main surface electrode side structure 27 is joined to the lower surface side of the heat spreader 19, and the main surface side of the second semiconductor element main surface electrode side structure 29 is connected to the upper surface side of the heat spreader 19. Are joined. The back surface of the first semiconductor element main surface electrode side structure 27 is soldered and mounted on the first substrate 13 and the back surface of the second semiconductor element main surface electrode side structure 29 is soldered and mounted on the second substrate 14, respectively. The back surface of the first substrate 13 is mounted on the first heat radiator 17 via the insulating layer 20, and the back surface of the second substrate 14 is mounted on the second heat radiator 18 via the insulating layer 22.

That is, the first semiconductor element main surface electrode-side structure 27 and the second semiconductor element main surface electrode-side structure 29 are stacked one above the other so that the second semiconductor element 12 is positioned on the first semiconductor element 11. ing.
Thus, the power conversion device 10 includes a semiconductor element main surface electrode side structure, a substrate soldered and mounted on the back surface of each of the semiconductor element main surface electrode side structure and the insulator region, and the substrate with an insulator. The semiconductor element main surface electrode side structure has an insulator region at the back side end portion together with the semiconductor element having the main surface electrode and the receiving portion into which the semiconductor element is inserted. Then, the main surface electrode is positioned on the receiving portion so as to cover the semiconductor element, and the upper surface electrode joined to the semiconductor element through the insulating member and the wire bonding for electrically connecting the main surface electrode and the upper surface electrode. It has a heat transfer region disposed close to the wire, and has a heat spreader mounted on the main surface electrode and the upper surface electrode via a heat conductive material.

That is, the power conversion device 10 includes, on one surface side of the heat spreader 19, the first semiconductor element main surface electrode side structure 27 including the semiconductor element main surface electrode side structure, the first substrate 13 including the substrate, and the radiator. The first heat radiator 17 is formed on the other surface side of the heat spreader 19 by a second semiconductor element main surface electrode side structure 29 made of a semiconductor element main surface electrode side structure, a second substrate 14 made of a substrate, and a heat radiator. The second heat radiator 18 is stacked, and the first semiconductor element main surface electrode side structure 27 and the second semiconductor element main surface electrode side structure 29 are arranged to face each other with the heat spreader 19 as a boundary.
Here, the first semiconductor element main surface electrode side structure 27 is one or both of the first semiconductor elements 11a and 11b, and the second semiconductor element main surface electrode side structure 29 is the second semiconductor elements 12a and 12b. One or both may be provided.

And let the 1st semiconductor element 11 and the 2nd semiconductor element 12 be the combination of the elements which have the state which does not carry out the electrically same operation | movement.
As shown in FIG. 3, on the main surface electrodes of the first semiconductor elements 11a and 11b or the second semiconductor elements 12a and 12b, the wire bonding line 26 is formed in a portion where the protrusion (heat transfer area) 19a of the heat spreader 19 is not present. Is close to the heat spreader 19 (see (a)), but the projection (heat transfer region) 19a is the main surface in the portion where the protrusion (heat transfer region) 19a of the heat spreader 19 is also on the main surface electrode. Close to the electrode (see (b)).

In this embodiment, the first semiconductor elements 11a and 11b are insulated gate bipolar transistors (IGBTs) or metal-oxide field-effect transmitters (MOSFETs). The second semiconductor element is a diode. Thereby, an inverter circuit can be comprised and an electric motor can be drive | operated.
Moreover, what is necessary is just to do as follows, when the power converter device 10 concerning this embodiment comprises the switch circuit used as an inverter circuit.

  A switch circuit is configured by arranging the IGBTs as the first semiconductor elements 11a and 11b and the diodes as the second semiconductor elements 12a and 12b in an antiparallel arrangement in which the energization direction is electrically reversed. Electrically connected to form an inverter circuit. In order to configure such a switch circuit, the first substrate 13 on which the first semiconductor elements 11a and 11b are mounted and the second substrate 14 on which the second semiconductor elements 12a and 12b are mounted are formed with electrodes. Connecting.

  That is, the first connection electrode 34 is connected to the upper surface electrode 15 joined to the main surface of the first semiconductor elements 11a and 11b, and the second connection is made to the upper surface electrode 16 joined to the main surface of the second semiconductor elements 12a and 12b. The connection electrodes 35 are connected to each other, and the first connection electrode 34 and the second connection electrode 35 are connected to each other. Further, the first substrate 13 and the second substrate 14 are connected by the third connection electrode 36. Each connection electrode 34, 35, 36 can be connected by a conventional connection method such as ultrasonic bonding or laser welding.

Next, a method for manufacturing the power conversion device 10 according to the present invention will be described.
When manufacturing the power converter 10, first, the first semiconductor element main surface electrode side structure 27 and the second semiconductor element main surface electrode side structure 29 are formed as a first step. Then, as a second step, the first semiconductor element main surface electrode side structure 27 is mounted on the first substrate 13 and the second semiconductor element main surface electrode side structure 29 is mounted on the second substrate 14, respectively. As a third step, the first semiconductor element main surface electrode side structure 27 and the second semiconductor element main surface electrode side structure 29 are bonded to the heat spreader 19.

That is, when the first semiconductor elements 11a and 11b are fixed to the first electrode 15 by the first process, the first semiconductor element main surface electrode-side structure 27 and the insulating member 24 having a metal foil and the first semiconductor element 11 are fixed after the fixing. 1 The semiconductor elements 11a and 11b are soldered together. Even if there are a plurality of first semiconductor elements 11a and 11b, they are fixed to the first electrode 15. Therefore, in order to prevent interference between the semiconductor elements 11a and 11b when the soldering position is displaced, It is not necessary to increase the distance between the two semiconductor elements 11a and 11b. Further, since the first semiconductor element main surface electrode side structure 27 is relatively heavy, the structure itself is less likely to be displaced during soldering.
The first semiconductor element main surface electrode side structure 27 can be easily formed, for example, by the following procedure.

  FIG. 4 is a cross-sectional explanatory diagram illustrating manufacturing steps (a) to (e) only for the first semiconductor element main surface electrode side structure side in the manufacturing process of the power conversion device of FIG. 1. As shown in FIG. 4, first, an insulating adhesive 25 is applied to the back surface side of the first electrode 15 and the side surface of the insulating member 24 (see (a)). After the application, the first semiconductor elements 11a and 11b are placed on a flat surface of a work table or the like (not shown), and the first electrode 15 to which the insulating adhesive 25 is applied is placed thereon (see (b)). ). At this time, the first semiconductor elements 11a and 11b and the first electrode 15 can be easily aligned by using a jig or the like.

Thereafter, by thermally curing the insulating adhesive 25, the back surfaces of the first semiconductor elements 11a and 11b and the back surface of the insulating member 24 at the end of the first electrode 15 are formed in the same plane, and the first semiconductor The elements 11a and 11b and the first electrode 15 can be joined, and the first semiconductor element main surface electrode side structure 27 is formed.
Next, solder is applied onto the main surface of the first substrate 13 to place the first semiconductor element main surface electrode-side structure 27. Thereby, the first semiconductor element main surface electrode side structure 27 is laminated on the first substrate 13 via the solder layer 21 (see (c)). After that, the wire bonding line 26 that electrically connects the main surface electrodes of the first semiconductor elements 11a and 11b and the first electrode 15 is disposed on the first semiconductor elements 11a and 11b (see (d)).

After the wire bonding line 26 is disposed, a heat conductive member 28 is applied on the first semiconductor elements 11a and 11b and the first electrode 15 so as to cover the wire bonding line 26, and the heat spreader 19 is placed thereon. At this time, the wire bonding line 26 is positioned in a recess between the protrusions (heat transfer regions) 19a of the heat spreader 19 (see (e)). Thereby, the main surface electrodes of the first semiconductor elements 11a and 11b which are the main surface side of the first semiconductor element main surface electrode side structure 27, the stepped receiving portion 15a vicinity portion of the first electrode 15, and the heat spreader 19 are Bonded by the heat conductive member 28.
In addition, although the manufacturing process of the power converter device 10 was demonstrated only about the 1st semiconductor element main surface electrode side structure 27 side here, it is 1st semiconductor also about the 2nd semiconductor element main surface electrode side structure 29. The element main surface electrode-side structure 27 can be manufactured by the same processes as the manufacturing processes (a) to (e).

  By having the configuration described above, the power conversion device 10 can obtain the following effects. In addition, the effect acquired regarding the 1st semiconductor element main surface electrode side structure 27 provided with 1st semiconductor element 11a, 11b demonstrated here is the 2nd semiconductor element main surface provided with 2nd semiconductor element 12a, 12b. Although the electrode-side structure 29 can be obtained in the same manner, the description of the second semiconductor element main surface electrode-side structure 29 is omitted. In the following description, the first semiconductor elements 11a and 11b are omitted from the first semiconductor element 11 and the second semiconductor elements 12a and 12b are omitted as the second semiconductor element 12, respectively.

  First, due to the following first to third effects, heat generated in the first semiconductor element 11 can be further radiated from the main surface electrode side. Thereby, in addition to heat radiation from the back surface of the first semiconductor element 11 to the first radiator 17 side, heat is radiated from the main surface electrode of the first semiconductor element 11, but from the main surface electrode of the first semiconductor element 11. Therefore, the temperature rise of the first semiconductor element 11 can be further suppressed.

  As a first effect, the heat spreader 19 can be easily disposed closer to the first semiconductor element 11. That is, since the main surface side of the first semiconductor element 11 is covered with the first electrode 15, the heat spreader 19 is placed on the first electrode 15, so that the heat transfer region 19 a of the heat spreader 19 is placed in the first semiconductor element. It is possible to easily bring the electrode 11 into sufficient proximity without being brought into contact with the eleven main surface electrodes. The distance between the heat transfer region 19a and the main surface electrode of the first semiconductor element 11 is mainly determined by the thickness and height of the first electrode 15. However, when the first electrode 15 is processed, it is sufficient by normal machining. Accuracy can be ensured.

Therefore, the first semiconductor element 11 and the heat spreader 19 are kept low while preventing the occurrence of a situation in which the protrusion (heat transfer region) 19a of the heat spreader 19 contacts the first semiconductor element 11 and damages the first semiconductor element 11. It can be thermally coupled with thermal resistance. For this reason, the heat dissipation effect from the main surface electrode to the heat spreader 19 is increased.
In addition, since the electrical connection of the main surface electrode of the 1st semiconductor element 11 is performed by the wire bonding line 26, there is no problem in electrical connection. Further, since the wire bonding wire 26 is fitted between the protrusions (heat transfer regions) 19 a of the heat spreader 19, the protrusions (heat transfer regions) 19 a do not adversely affect the wire bonding wires 26. Furthermore, since the wire bonding line 26 itself is also a metal, the heat flow from the main surface electrode reaches the heat spreader 19 through the wire bonding line 26, thereby further increasing the heat dissipation effect to the heat spreader 19.

As a second effect, not only the protrusion (heat transfer region) 19a and the wire bonding line 26 but also the first electrode 15 contributes to the heat conduction from the main surface electrode of the first semiconductor element 11. That is, the heat flow from the main surface electrode spreads to the first electrode 15 side and reaches the heat spreader 19. For this reason, the heat flow density in the heat conductive member 28 and the insulating adhesive 25 whose heat resistance is relatively larger than that of the metal can be reduced, and the temperature gradient generated in these portions can be suppressed. Therefore, the heat dissipation effect from the main surface electrode side is improved.
As a third effect, the first electrode 15 itself can also contribute to heat dissipation. That is, as described in the second effect, since the heat flow also flows through the first electrode 15, not all of the heat flow flows through the heat spreader 19, but the first electrode 15 can also serve as a heat dissipation path. Thereby, thermal resistance falls and the heat dissipation effect improves further.

Thus, a heat flow path is formed from the main surface electrode of the first semiconductor element 11 to the heat spreader 19, and further from the heat spreader 19 to the first radiator 17 through the first electrode 15, and the temperature of the first semiconductor element 11 is lowered. The heat dissipation effect can be improved.
As a fourth effect, it is possible to easily dispose the heat spreader 19 on the first semiconductor element 11 with high positional accuracy and without requiring a large space.

  FIGS. 5A and 5B show the first semiconductor element main surface electrode-side structure used for explaining the effects. FIG. 5A is a cross-sectional explanatory view before mounting the heat spreader, and FIG. 5B is a cross-sectional explanatory view after mounting the heat spreader. As shown in FIG. 5, in the first semiconductor element main surface electrode side structure 27, when the heat spreader 19 is disposed on the main surface electrode of the first semiconductor element 11, the end of the first electrode 15 is aligned. If the end portions of the heat spreader 19 are aligned as a reference, the heat spreader 19 can be easily arranged without the projection (heat transfer region) 19a of the heat spreader 19 interfering with the stepped receiving portion 15a of the first electrode 15. Furthermore, since the stepped receiving portion 15a is not made larger than necessary, the heat radiation effect is not deteriorated due to the enlarged stepped receiving portion 15a.

  That is, the mounting position X of the first semiconductor element 11 and the position Y of the wire bonding line 26 can be determined with reference to the DD line (see (a)). Similarly, if the heat spreader 19 is arranged based on the DD line, the position Z (see (b)) of the protrusion (heat transfer region) 19a can be easily determined with high accuracy. Accordingly, the protrusion (heat transfer region) 19a can be easily inserted between the wire bonding wires 26.

  From the above, it is possible to easily prevent the protrusion (heat transfer region) 19a of the heat spreader 19 from interfering with the wire bonding line 26. And the deterioration of the heat dissipation effect by providing an excessive clearance gap between the projection part (heat-transfer area | region) 19a and the wire bonding line 26 can also be prevented. Furthermore, when the heat spreader 19 is arranged, even if it is difficult to directly see the fitting portion between the protrusion (heat transfer region) 19a and the wire bonding line 26, the heat spreader 19 can be easily fitted and arranged. In addition, since the heat spreader 19 is joined to the first electrode 15 via the heat conductive member 28, a special part for holding and fixing the heat spreader 19 becomes unnecessary, and the size can be reduced.

  As a fifth effect, even if the first electrode 15 is disposed in the vicinity of the first semiconductor element 11, electrical insulation can be easily ensured. That is, in order to improve the heat dissipation effect from the main surface electrode of the first semiconductor element 11, it is desirable that not only the heat spreader 19 but also the first electrode 15 is a metal. Further, the heat conductive member 28 is generally better in heat conductivity in a material having conductivity. Therefore, the heat spreader 19 and the first electrode 15 may be at the same potential as the main surface electrode of the first semiconductor element 11 through the heat conductive member 28.

  On the other hand, the side surface of the first semiconductor element 11 is generally at the same potential as the back surface of the first semiconductor element 11 and the substrate. In this configuration, the side surface of the first semiconductor element 11 is joined to the first electrode 15 via the insulating adhesive 25, so that the side surface of the first semiconductor element 11 and the first electrode 15 can be easily electrically insulated, and , Can be ensured reliably. Furthermore, the insulating adhesive 25 can also prevent the heat conductive member 28 from going around the side surface of the first semiconductor element 11. Therefore, an electrical short circuit between the main surface electrode and the side surface of the first semiconductor element 11 through the heat conductive member 28 can be easily and reliably prevented.

As a sixth effect, the main surface electrode of the first semiconductor element 11 can be easily and reliably protected. That is, the main surface electrode side of the first semiconductor element 11 is covered with the heat spreader 19 via the heat conductive member 28, and the side surface of the first semiconductor element 11 is covered with the insulating adhesive 25 via the insulating adhesive 25. Surrounded by one electrode 15. Therefore, it is difficult for moisture or the like to enter directly from the outside, and the first semiconductor element 11 itself can be easily protected.
As a seventh effect, the power conversion device 10 can increase the heat dissipation effect of each first semiconductor element 11 and reduce the size of the device even when the plurality of first semiconductor elements 11 are configured. For example, in order to increase the current capacity, when there are a plurality of first semiconductor elements 11, one first semiconductor element 11 is disposed on the first semiconductor element main surface electrode-side structure 27, and the other The first semiconductor element 11 can be disposed on the second semiconductor element main surface electrode side structure 29.

  With such a configuration, each first semiconductor element 11 can be cooled not only from the back surface side but also from the main surface electrode side, so that the heat dissipation effect can be improved. Further, for the heat radiation on the main surface side of the first semiconductor element 11, the protrusions (heat transfer regions) 19 a and 19 b on one surface side and the other surface side of the heat spreader 19 are utilized without using the heat spreader 19 having a complicated shape. Thereby, the heat dissipation effect from the main surface electrode side can be exhibited. Therefore, the apparatus can be downsized.

That is, the first semiconductor element main surface electrode side structure 27 and the second semiconductor element main surface electrode side structure 29 are formed in advance, or both the semiconductor element main surface electrode side structures 27 and 31 are formed on the respective substrates. 13 and 14 are soldered and mounted. After that, the heat spreader 19 may be disposed on the main surface side of both semiconductor element main surface electrode-side structures 27 and 31. For this reason, since no special parts for holding and fixing the heat spreader 19 are required, the size of the apparatus can be reduced, and the manufacturing cost can also be reduced.
As an eighth effect, a plurality of first semiconductor elements facing each other through the heat spreader 19 inside each of the first semiconductor element main surface electrode side structure 27 and the second semiconductor element main surface electrode side structure 29. If the main surface electrodes of 11 have the same potential, for example, when the plurality of first semiconductor elements 11 are connected in parallel in order to increase the current capacity of the power converter 10, the following effects are further obtained. Can also be obtained.

  There is no need to interpose an insulating material between the main surface electrode of each first semiconductor element 11 and the heat spreader 19. In general, a conductive material has higher thermal conductivity than an insulating material. Therefore, a heat radiation effect can be enhanced by utilizing a conductive adhesive material such as a silver paste having a high thermal conductivity as the thermal conductive member 28. Moreover, since it is not necessary to interpose an insulating material between the main surface electrode of each 1st semiconductor element 11 and the heat spreader 19, the heat dissipation effect can be improved. In addition, it is possible to prevent the deterioration of reliability caused by the thermal stress based on the difference in thermal expansion coefficient of the material, which occurs when the insulating material and the heat spreader 19 or the main surface electrode of each first semiconductor element 11 are joined. be able to.

As a ninth effect, for example, it is assumed that the power conversion device 10 is an inverter device, and the IGBT as the first semiconductor element 11 and the diode as the second semiconductor element 12 are electrically connected in the reverse direction. It is assumed that a switch circuit is configured in the arrangement, and the inverter circuit is configured by appropriately connecting the switch circuit.
In this case, in the first semiconductor element 11 and the second semiconductor element 12, currents do not flow through the semiconductor elements 11 and 12 at the same time except for an extremely short transition state in which both elements are switched on and off. The main surface electrodes of both semiconductor elements 11 and 12 are electrically at the same potential.
Therefore, first, the second semiconductor element 12 included in the second semiconductor element main surface electrode side structure 29 is positioned on the first semiconductor element 11 included in the first semiconductor element main surface electrode side structure 27. Then, the following effects occur.

  As a tenth effect, the heat dissipation effect of the first semiconductor element 11 and the second semiconductor element 12 is further improved. That is, it is possible to avoid a situation in which both semiconductor elements 11 and 12 are energized at the same time and both generate large heat. For example, when the power conversion device 10 is used in an electric automobile vehicle, the first semiconductor element 11 that is an IGBT mainly generates heat when starting the vehicle, and the second semiconductor element 12 that is a diode generates heat during regeneration. Therefore, according to this configuration, when the first semiconductor element 11 mainly generates heat, such as when the vehicle starts, heat can be radiated from both the back surface and the main surface of the element. In this case, heat generation of the second semiconductor element 12 is small and does not hinder heat dissipation of the first semiconductor element 11.

Moreover, the 2nd semiconductor element 12 is also thermally radiated from both the back surface and the main surface side, and can suppress a temperature rise. Similarly, when the second semiconductor element 12 mainly generates heat, such as during regeneration, the heat dissipation effect of the second semiconductor element 12 can be improved, and in addition, the temperature rise of the first semiconductor element 11 can be suppressed. Can do.
In addition, since each main surface electrode of the 1st semiconductor element 11 and the 2nd semiconductor element 12 is the same electric potential, as it has the 2nd effect mentioned above, even if it has electroconductivity, heat conductivity with favorable heat conductivity is carried out. In addition, since it is not necessary to interpose an insulating material in the heat dissipation path to the heat spreader 19, a greater heat dissipation effect can be obtained.
As an eleventh effect, the following effects can be additionally obtained by employing the manufacturing process of the power conversion device 10 according to the present invention.

By performing the second step and the third step after the first and first steps, it is possible to prevent the positional deviation from occurring when the first semiconductor element 11 is mounted by soldering. Thereby, it is possible to prevent an increase in the size of the power conversion device due to the layout design in consideration of the soldering position shift and a decrease in the thermal stress resistance in the portion due to the shape change of the soldered portion.
In addition, the soldering mounting in the second step can be easily performed, and further, the insulating bonding located between the side surface of the first semiconductor element 11 and the end portion of the first electrode 15 or the side surface of the insulating member 24. The agent 25 prevents the solder 21 from wrapping around the main surface electrode side of the first semiconductor element 11 during soldering, and can reliably prevent the occurrence of an electrical short circuit that occurs when the solder 21 wraps around. .

  Second, the first electrode 15 can be easily mounted and arranged. That is, if the first electrode 15 is fixed after the first semiconductor element 11 is soldered and mounted on the first substrate 13 in advance, soldering and mounting becomes difficult. That is, if soldering for fixing the first electrode 15 is performed, it is difficult to avoid adversely affecting the soldered portion on which the first semiconductor element 11 is mounted. In particular, when so-called lead-free solder is used during soldering, there are few degrees of freedom in setting the soldering temperature, and it may be extremely difficult to selectively use two types of solder materials having different soldering temperatures.

On the other hand, as described above, the first semiconductor element 11 and the first electrode 15 are fixed after the back surfaces of the first semiconductor element 11 and the insulating member 24 are flush with each other by the process procedure according to the present invention. Therefore, the first semiconductor element 11 and the first electrode 15 can be easily mounted and fixed as the first semiconductor element main surface electrode side structure 27 by one soldering.
Third, when a plurality of first semiconductor elements 11 are fixed to the first electrode 15, even if there is some thickness variation in each first semiconductor element 11, no trouble occurs. In general, it is unavoidable that the semiconductor element has some variation in thickness due to manufacturing convenience. However, in the process procedure according to the present invention, the thickness variation depends on the degree of collapse of the insulating adhesive 25. Even if it exists, each back surface of each 1st semiconductor element 11 and the insulating member 24 can be easily made into the same plane. Therefore, even in such a case, the power conversion device 10 can be formed easily, that is, at a reduced manufacturing cost.

As described above, by performing the first step prior to the third step of soldering and mounting the back surface of the first semiconductor element 11 to the first substrate 13 and joining the heat spreader 19 in the second step. The effects 1 to 3 can be obtained.
In addition, in order to relieve the thermal stress when soldered to the first substrate 13 on the back surface of the first semiconductor element 11, the thermal stress having an intermediate thermal expansion coefficient between the first semiconductor element 11 and the first substrate 13. The same effect can be obtained even if the first step is performed after the buffer plate (not shown) is soldered and joined in advance.
(Second Embodiment)

FIG. 6 is a cross-sectional explanatory view showing the configuration of the power converter according to the second embodiment of the present invention. As illustrated in FIG. 6, the power conversion device 40 includes a heat spreader 41 instead of the heat spreader 19. The heat spreader 41 functions as a heat transfer area (indicated by a broken line in the figure) on one side (first radiator 17 side) and the other side (second radiator 18 side) formed in a thin plate shape. The second wire bonding lines 42 are arranged, and the second wire bonding lines 42 are between the wire bonding lines 26 connected to the main surface electrodes of the first semiconductor element 11 and the main surface of the second semiconductor element 12. The wire bonding lines 32 connected to the electrodes are preferably disposed close to each other.
Other configurations and operations are the same as those of the power conversion device 10 according to the first embodiment.

By having the said structure, in addition to the effect acquired in 1st Embodiment, the following effects can also be acquired.
As a first effect, the heat spreader 41 can be easily processed, and the manufacturing cost can be reduced. That is, the heat spreader 41 does not need to be subjected to fine projection processing for forming the protrusion (heat transfer region) 19a, and in particular, does not need to be applied to both one side and the other side compared to the heat spreader 19. . On the other hand, the second wire bonding line 42 can be easily connected. Therefore, the cost related to the processing of the heat spreader 41 can be further reduced.

In addition, since the 2nd wire bonding line 42 is also a metal, the 2nd wire bonding line 42 contributes to heat dissipation as a heat transfer area | region like the projection part (heat transfer area | region) 19a provided in the heat spreader 19. FIG.
(Third embodiment)
FIG. 7 is a cross-sectional explanatory view showing the configuration of the power converter according to the third embodiment of the present invention. As illustrated in FIG. 7, the power conversion device 45 includes a heat spreader 46 instead of the heat spreader 41. In this heat spreader 46, the bonding wire connecting portion 46a to which the second wire bonding wire 42 is connected is thicker than the electrode joining portion 46b joined to the first electrode 15 (second electrode 16) (first heat radiator). The length in the direction from 17 to the second radiator 18 is long).

Other configurations and operations are the same as those of the power conversion device 40 according to the second embodiment.
By having the said structure, in addition to the effect acquired in 2nd Embodiment, the following effects can also be acquired.
Since the second wire bonding line 42 can be brought closer to the main surface electrode of the first semiconductor element 11 (second semiconductor element 12), the heat dissipation effect is further improved.

In particular, the end portion of the heat spreader 46 is formed thin to connect to the first electrode 15 (second electrode 16), or the height away from the main surface electrode of the first semiconductor element 11 (second semiconductor element 12). There is a possibility that one side or the other side of the heat spreader 46 is positioned. Even in this case, the main surface electrode of the first semiconductor element 11 (second semiconductor element 12) and the heat spreader 46 immediately above the main surface electrode can be disposed close to each other. Further, since most of the space between them can be occupied by the metal body formed by the wire bonding line 26 and the second wire bonding line 42, the thermal resistance inside the space can also be reduced.
Note that it is easy to provide the second wire bonding lines 42 on both the one side and the other side of the heat spreader 46 by fixing the end of the heat spreader 46 with an appropriate jig.

(Fourth embodiment)
FIG. 8 is an explanatory cross-sectional view showing the configuration of the power converter according to the fourth embodiment of the present invention. As illustrated in FIG. 8, the power conversion device 50 includes a protruding member 51 a (51 b) protruding from the main surface of the first substrate 13 (second substrate 14) and a metal foil on the back side of the insulating member 24 (30). And a spacer 52a (52b) disposed between the main surfaces of the first substrate 13 (second substrate 14). Then, the side surface of the insulating member 24 (30) is brought into contact with the protruding member 51a (51b), and the insulating member 24 (30) is positioned and disposed, and solder mounting is performed via the spacer 52a (52b).
Other configurations and operations are the same as those of the power conversion device 10 according to the first embodiment.

By having the said structure, in addition to the effect acquired in 1st Embodiment, the following effects can also be acquired.
When soldering and mounting the first semiconductor element main surface electrode side structure 27 (second semiconductor element main surface electrode side structure 29) to the first substrate 13 (second substrate 14), the soldering position is set with high accuracy. Can be matched.
In particular, since the first semiconductor element 11 (second semiconductor element 12) and the first electrode 15 (second electrode 16) are bonded and fixed in advance by the insulating adhesive 25 by the manufacturing process according to the present invention, insulation is performed. By soldering and mounting the member 24 (30) in contact with the protruding member 51a (51b), the soldering position of the first semiconductor element 11 (second semiconductor element 12) can be easily adjusted with high accuracy. .

Further, since the soldering shape does not change, the thermal stress resistance of the soldered portion does not change, and the protruding member 51a (51b) is directly connected to the first semiconductor element 11 (second semiconductor element). 12), the presence of the protruding member 51a (51b) does not adversely affect the soldered portion of the first semiconductor element 11 (second semiconductor element 12).
Further, if solder mounting is performed between the metal foil on the back surface side of the insulating member 24 (31) and the first substrate 13 (second substrate 14) via the spacer 52a (52b), the soldering thickness is set to a predetermined value. Can be easily controlled. In particular, according to the manufacturing process of the present invention, it is possible to easily control the soldering thickness between the first semiconductor element 11 (second semiconductor element 12) and the first substrate 13 (second substrate 14). it can. Thereby, the situation where the heat stress tolerance of a soldering part changes can be prevented reliably.

Since the spacer 52a (52b) is not positioned below or in the vicinity of the first semiconductor element 11 (second semiconductor element 12), the presence of the spacer 52a (52b) is the first semiconductor element 11 (second semiconductor element). There is no adverse effect on the current flow to the soldered portion between the element 12) and the first substrate 13 (second substrate 14) and to the back surface of the first semiconductor element 11 (second semiconductor element 12). .
In addition, the said effect applies the structure which has the protrusion member 51a (51b) and the spacer 52a (52b) in the power converter device 40 which concerns on 2nd Embodiment, and the power converter device 45 which concerns on 3rd Embodiment. Can be obtained as well.
(Fifth embodiment)

FIGS. 9A and 9B show configurations of an electrode portion and an insulating region of a power conversion device according to a fifth embodiment of the present invention, where FIG. 9A is a cross-sectional explanatory view and FIG. 9B is a bottom side explanatory view. As shown in FIG. 9, in place of the first electrode 15 (second electrode 16), the first electrode 55 (second electrode, not shown) formed in a substantially flat plate shape is included, and the first electrode 55 (first electrode) A rectangular frame-shaped insulator region 56 along the outer periphery of the back surface is provided on the outer periphery of the back surface of two electrodes (not shown). The insulator region 56 is formed by joining a plurality of substantially rectangular flat plates in a frame shape with, for example, aluminum nitride or alumina. In the following description, the description of the second electrode is omitted, but the second electrode is the same as the first electrode 55.
Other configurations and operations are the same as those of the first electrode 15 (second electrode 16) according to the first embodiment.

By having the said structure, in addition to the effect acquired in said each embodiment, the following effects can also be acquired.
The first electrode 55 can be further easily formed. A required value of the total height of the end portion of the first electrode 55 and the insulator region 56 is about several hundred μm to about 1 mm. Therefore, even if the first electrode 55 is formed in a substantially flat plate shape and the insulator region 56 is formed by bonding a ceramic substrate having a metal foil on the front and back surfaces by a conventional technique, for example, the first electrode necessary for this configuration is used. An electrode 55 and an insulator region 56 can be formed.
Thereby, when forming the 1st electrode 55, the increase in manufacturing cost by performing a complicated process can be prevented. In addition, since the surface on the insulator region 56 side also has a certain thickness, it is possible to easily prevent a situation where an electrical short circuit occurs due to the solder contacting the end portion of the first electrode 55.

(Sixth embodiment)
FIG. 10 shows the configuration of the power conversion device according to the sixth embodiment of the present invention, in which (a) is a cross-sectional explanatory view similar to (a) of FIG. 3, and (b) is (b) of FIG. It is similar sectional explanatory drawing. As shown in FIG. 10, in the power conversion device 60, the first semiconductor element 11 has the control terminal 61, the circuit board 62 is disposed on the first electrode 15, and the control terminal 61 and the circuit board 62 are connected to the conductive member. 61a is electrically connected (see (a)). The heat spreader 19 has a wiring pattern 63 on the surface facing the first semiconductor element 11, and the control terminal 61 and the wiring pattern 63 are electrically connected by a pin 64 or the like (see (b)).
Other configurations and operations are the same as those of the power conversion device 10 according to the first embodiment.

By having the said structure, the following effects can be acquired.
As a first effect, even when the first semiconductor element 11 is, for example, an IGBT or the like and has a control terminal 61 using a gate, the control terminal 61 and the circuit board 62 can be easily and space-saving connected to each other. Can be connected. In particular, since the circuit board 62 is arranged on the first electrode 15, it is not necessary to provide a special space for arranging the circuit board 62 on the first board 13. Therefore, a power converter device can be reduced in size.

  As a second effect, the electrical operation of the first semiconductor element 11 is further stabilized. That is, in the IGBT or the like, the electric potential of the first semiconductor element 11 is controlled by setting the potential of the gate that is the control terminal 61 with respect to the potential of the emitter that is the main surface electrode. In the configuration according to this embodiment, the circuit board 62 is disposed immediately above the first electrode 15 that is the emitter potential, and electrical connection to the gate is performed. As a result, the gate connection line is more easily capacitively coupled to the emitter electrode side, and the first substrate 13 whose first electrode 15 is the same as the back surface potential of the first semiconductor element 11, wiring of other potentials, etc. Shielding effect can be obtained. Therefore, the adverse effect of disturbing the gate (control terminal 61) potential of the first semiconductor element 11 due to noise or the like is reduced, and the electrical operation of the first semiconductor element 11 is stabilized.

As a third effect, the wiring pattern 63 and the control terminal 61 can be connected when the heat spreader 19 is placed by a wiring member such as a pin 64 provided on the heat spreader 19. Therefore, the process of connecting the control terminal 61 and the circuit board 62 by wire bonding can be omitted, and the manufacturing cost can be further reduced.
(Seventh embodiment)

FIG. 11 is a cross-sectional explanatory view showing a configuration excluding an insulating layer and a heat radiator of a power conversion device according to a seventh embodiment of the present invention. As shown in FIG. 11, the power conversion device 65 includes a first semiconductor element main surface electrode side structure 27 and a second semiconductor element main surface electrode side structure 29, each of which includes the first semiconductor element 11 and the second semiconductor element. Any one of 12 or both. Further, a first semiconductor element main surface electrode side structure 27 and a second semiconductor element main surface electrode side structure 29 are stacked on the first semiconductor element 11 so that the second semiconductor element 12 is positioned. The Further, the first semiconductor element 11 and the second semiconductor element 12 are disposed adjacent to each other inside the first semiconductor element main surface electrode side structure 27 and the second semiconductor element main surface electrode side structure 29. In addition, the first semiconductor element 11 and the second semiconductor element 12 perform an electrically different operation.
Other configurations and operations are the same as those of the power conversion device 10 according to the first embodiment.

By having the said structure, in addition to the effect acquired by said each embodiment, the following effects can be acquired.
When the power conversion device 65 connects a plurality of semiconductor elements, that is, the first semiconductor element 11 and the second semiconductor element 12 in parallel in order to increase the current capacity, the first effect is that the first semiconductor element main surface In the electrode side structure 27 and the second semiconductor element main surface electrode side structure 29, it is necessary to have a layout in which the first semiconductor elements 11 and the second semiconductor elements 12 that perform the same electrical operation are adjacent to each other. The power converter can be reduced in size without the adjacent layout. With this configuration, it is possible to prevent thermal interference between adjacent semiconductor elements, that is, a situation where the temperature of the semiconductor element increases due to adjacent semiconductor elements that perform the same electrical operation.

As a second effect, even when the sizes of the first semiconductor element 11 and the second semiconductor element 12 are different, the power conversion device can be further downsized. That is, for example, by mounting the large first semiconductor element 11 on the first semiconductor element main surface electrode side structure 27, the small second semiconductor element 12 mounted on the second semiconductor element main surface electrode side structure 29. It is possible to prevent a useless space from being generated around. With the two semiconductor elements 11 and 12 disposed adjacent to each other, the first semiconductor element main surface electrode side structure 27 and the second semiconductor element main surface electrode side structure 29 are both mounted at high density, that is, both the semiconductor elements 11, Since 12 can be mounted close to each other, the power converter can be further reduced in size.
(Eighth embodiment)

12 shows the configuration of the power conversion device according to the eighth embodiment of the present invention excluding the insulating layer and the radiator, (a) is a cross-sectional explanatory view similar to FIG. 11, and (b) is FIG. It is sectional explanatory drawing similar to a). As illustrated in FIG. 12, the power conversion device 70 includes a first electrode 71 (second electrode 72) formed of an insulating material instead of the first electrode 15 (second electrode 16).
Other configurations and operations are the same as those of the power conversion device 10 according to the first embodiment.
By having the said structure, in addition to the effect acquired by said each embodiment, the following effects can be acquired.

When the upper surface electrodes (first electrode 71 and second electrode 72) are formed of a metal body, it is necessary to join the insulating member 24 (see FIG. 1) to electrically insulate the substrate. Since the electrodes (the first electrode 71 and the second electrode 72) are formed of an insulating material, it is not necessary to join an insulating member to the upper surface electrode. Therefore, the manufacturing cost can be further reduced. The electrical connection to the main surface electrodes of the first semiconductor elements 11 and 12 may be performed by providing a metal wiring board (not shown) on the first electrode 71 (second electrode 72) made of this insulating material. .
(Ninth embodiment)

FIG. 13 shows a configuration of a power conversion device according to the ninth embodiment of the present invention, in which (a) is a cross-sectional explanatory view similar to FIG. 3 (a), and (b) is similar to FIG. 3 (b). FIG. As illustrated in FIG. 13, the power conversion device 75 includes a heat spreader 76 made of a metal body instead of the heat spreader 19. The heat spreader 76 also serves as the first connection electrode 34 and the second connection electrode 35 (see FIG. 3). The heat spreader 76 and the first electrode 15 (second electrode 16) have both electrical conductivity and thermal conductivity. It is joined by an adhesive member 77 provided.
Other configurations and operations are the same as those of the power conversion device 10 according to the first embodiment.
By having the said structure, in addition to the effect acquired by said each embodiment, the following effects can be acquired.

The main surface electrode of the first semiconductor element 11 (second semiconductor element 12) is electrically connected to the first electrode 15 (second electrode 16) via the wire bonding line 26 (32). It is necessary to provide some connection electrode on the electrode 15 (second electrode 16) to establish electrical connection of the power conversion device 75. According to the configuration of this embodiment, the metal heat spreader 76 is connected to the connection electrode. And the electric connection of the power converter 75 can be made. Therefore, the power converter 75 can be further downsized and the manufacturing cost can be reduced.
In each of the above embodiments, the second semiconductor element 12 has been described as being opposed to the first semiconductor element 11 with the heat spreader 19 (41, 46, 76) interposed therebetween. Thus, the present invention is not limited to the opposed arrangement structure of the semiconductor elements 11 and 12.

FIG. 14 is a cross-sectional explanatory view showing a modification of the power converter according to the present invention. As shown in FIG. 14, in the power conversion device 80, the first substrate 13 is disposed on the main surface of the first radiator 17 via the insulating layer 20, and the solder layer 21 is disposed on the main surface of the first substrate 13. The first semiconductor elements 11a and 11b are respectively mounted, and a heat spreader 81 is disposed on the main surface of the first semiconductor elements 11a and 11b.
In the heat spreader 81, the surface on the side opposite to the surface on the first semiconductor elements 11a, 11b side, that is, the surface on the second semiconductor elements 12a, 12b side is a flat surface not provided with the protrusion 19a serving as a heat transfer region. Others have the same configuration and operation as the heat spreader 19. The second heat radiator 85 is mounted on the heat spreader 81 via an insulator 82, a second substrate 83, and an insulator 84 stacked in the order of description. Note that the second radiator 85 may be mounted on the heat spreader 81 via an insulator 82.

Even in the power conversion device 80 having such a configuration, the effects obtained in the above embodiments can be similarly obtained.
Further, the second radiator 85 is not disposed on the heat spreader 81, and the second substrate 83 is connected to the first substrate 13 or the first radiator 17, and the heat flow from the second substrate 83 is used as the first heat dissipation. Even if it is made to flow through the container 17, the effects obtained in the above embodiments can be obtained in the same manner.
In addition, each of the above embodiments and modifications has been described in the structure in which a semiconductor element is mounted on a metal substrate. However, the present invention is not limited to this, and the metal is formed on both the ceramic substrate and the front and back surfaces. Even in a structure in which a semiconductor element is mounted on a ceramic substrate having a foil, and in a structure in which the ceramic substrate is mounted on a radiator via a base plate on the back surface, the above embodiments and modifications are obtained. The same effect can be obtained as well.

  As described above, the power conversion device according to the present invention includes a semiconductor element having a main surface electrode, a receiving part for allowing the semiconductor element to enter, and an insulating region at a rear side end part, and the receiving part includes the main surface. An electrode is disposed so as to cover the semiconductor element, and is close to the upper surface electrode joined to the semiconductor element through an insulating member, and the wire bonding line that electrically connects the main surface electrode and the upper surface electrode. A semiconductor element main surface electrode-side structure having a heat transfer region disposed and having a heat spreader mounted on the main surface electrode and the upper surface electrode via a heat conductive material; It has the board | substrate which solder-mounted on each back surface of the surface electrode side structure and the said insulator area | region, and the heat radiator which mounted the said board | substrate through the insulator.

  Further, in the present invention, on one surface side of the heat spreader, a first semiconductor element main surface electrode side structure composed of the semiconductor element main surface electrode side structure, a first substrate composed of the substrate, and a first radiator composed of the radiator. 1 heat radiator on the other surface side of the heat spreader, a second semiconductor element main surface electrode side structure made of the semiconductor element main surface electrode side structure, a second substrate made of the substrate, and a first heat sink made of the heat radiator. It is preferable that two heat radiators are stacked and the first semiconductor element main surface electrode side structure and the second semiconductor element main surface electrode side structure are arranged to face each other with the heat spreader as a boundary.

In the present invention, the first semiconductor element and the second semiconductor element in which the first semiconductor element main surface electrode side structure and the second semiconductor element main surface electrode side structure are electrically operated differently. Preferably, the first semiconductor element and the second semiconductor element are arranged without facing each other.
In the present invention, it is preferable that a second wire bonding line functioning as the heat transfer region is disposed between the wire bonding lines of the heat spreader.
Moreover, in this invention, it is preferable that the connection part with the said 2nd wire bonding line is formed in the said heat spreader thicker than the junction part with the said upper surface electrode.

Further, in the present invention, at least one of a projecting member protruding from the main surface of the substrate and contacting the side surface of the insulator region and a spacer disposed between the back surface side of the insulator region and the substrate is provided. It is preferable.
In the present invention, it is preferable that the upper surface electrode is formed in a flat plate shape, and the insulator region is formed by joining a plurality of rectangular flat plates in a frame shape.
In the present invention, it is preferable that the first semiconductor element has a control terminal, and the control terminal is electrically connected to a circuit board disposed on the upper surface electrode.

Further, in the present invention, the first semiconductor element has a control terminal, has a wiring pattern on a surface of the heat spreader facing the first semiconductor element, and electrically connects the control terminal and the wiring pattern. It is preferable.
In the present invention, each of the first semiconductor element main surface electrode side structure and the second semiconductor element main surface electrode side structure is either one or both of the first semiconductor element and the second semiconductor element. And the first semiconductor element and the second semiconductor element are stacked so as not to face each other, and the first semiconductor element and the second semiconductor element are arranged adjacent to each other and perform different operations. Is preferred.

Moreover, in this invention, it is preferable that the said upper surface electrode is formed with the insulator material.
Moreover, in this invention, it is preferable to join the said upper surface electrode and the said heat spreader with the adhesive material which has electrical conductivity and heat conductivity.
In the present invention, the first semiconductor element is an insulated gate bipolar transistor (IGBT) or a metal-silicon-oxide field effect transmitter (MOSFET), the second semiconductor element is a diode, and a switch circuit forming an inverter circuit is provided. It is preferable to configure.

Moreover, the manufacturing method of the power converter device according to the present invention includes a first step of forming the semiconductor element main surface electrode side structure and a second step of mounting the semiconductor element main surface electrode side structure on the substrate. And a third step of bonding the semiconductor element main surface electrode side structure to a heat spreader, and the second step and the third step are performed after the first step. Yes.
Further, in the present invention, a protruding member is provided on the main surface of the substrate, and a spacer is disposed between the back surface side of the insulating region for bonding and fixing the semiconductor element and the upper surface electrode, and the substrate. It is preferable that the region is brought into contact with the protruding member and the semiconductor element main surface electrode-side structure is soldered and mounted on the substrate via the spacer.

It is a section explanatory view showing the composition of the power converter concerning a 1st embodiment of this invention. FIG. 2 is a cross-sectional explanatory view taken along line AA in FIG. 1. The cross-section structure of each part except the insulating layer and heat radiator of FIG. 1 is shown, (a) is a cross-sectional explanatory drawing along the BB line, (b) is a cross-sectional explanatory drawing along the CC line. In the manufacturing process of the power converter device of FIG. 1, it is cross-sectional explanatory drawing which shows the manufacturing process (a)-(e) only about the 1st semiconductor element main surface electrode side structure side. The 1st semiconductor element main surface electrode side structure used for description of an effect is shown, (a) is a section explanatory view before heat spreader mounting, (b) is a section explanatory view after heat spreader mounting. It is a section explanatory view showing the composition of the power converter concerning a 2nd embodiment of this invention. It is a section explanatory view showing the composition of the power converter concerning a 3rd embodiment of this invention. It is a section explanatory view showing the composition of the power converter concerning a 4th embodiment of this invention. The structure of the electrode part and insulating part area | region of the power converter device which concerns on 5th Embodiment of this invention is shown, (a) is sectional explanatory drawing, (b) is a lower surface side explanatory drawing. The structure of the power converter device which concerns on 6th Embodiment of this invention is shown, (a) is cross-sectional explanatory drawing similar to (a) of FIG. 3, (b) is cross-sectional explanatory drawing similar to (b) of FIG. FIG. It is sectional explanatory drawing which shows the structure except the insulating layer and heat radiator of the power converter device which concerns on 7th Embodiment of this invention. The structure except the insulating layer and heat radiator of the power converter device which concerns on 8th Embodiment of this invention is shown, (a) is sectional explanatory drawing similar to FIG. 11, (b) is similar to FIG. 3 (a). FIG. The structure of the power converter device which concerns on 9th Embodiment of this invention is shown, (a) is sectional explanatory drawing similar to Fig.3 (a), (b) is sectional explanatory drawing similar to FIG.3 (b). is there. It is sectional explanatory drawing which shows the modification of the power converter device which concerns on this invention. It is sectional explanatory drawing which shows the structure of the conventional semiconductor device typically.

Explanation of symbols

10, 40, 45, 50, 60, 65, 70, 75, 80 Power conversion device 11a, 11b First semiconductor element 12a, 12b Second semiconductor element 13 First substrate 14, 83 Second substrate 15, 55, 71 First 1 electrode 15a, 16a Stepped receiving portion 16, 72 Second electrode 17 First heat radiator 18, 85 Second heat radiator 19, 41, 46, 76, 81 Heat spreader 19a, 19b Protruding portion 20, 22 Insulating layer 21, 23 Solder layer 24, 30 Insulating member 25, 31 Insulating adhesive 26, 32 Wire bonding line 27 First semiconductor element main surface electrode side structure 28, 33 Thermal conductive member 29 Second semiconductor element main surface electrode side structure 34 First connection electrode 35 Second connection electrode 36 Third connection electrode 42 Second wire bonding line 46a Bonding line connection portion 46b Electrode bonding portion 51a, 51b Protrusion member 52a, 52b Spacer 56 Insulator region 61 Control terminal 62 Circuit board 63 Wiring pattern 64 Pin 77 Adhesive member 82, 84 Insulator

Claims (15)

A semiconductor element having a main surface electrode, and a receiving portion into which the semiconductor element is inserted, and an insulating region at a rear surface side end portion, and the main surface electrode is positioned in the receiving portion so that the main surface side of the semiconductor element is An upper surface electrode that is disposed so as to cover a part and is bonded to the semiconductor element via an insulating member, and a heat transfer region that is disposed in proximity to a wire bonding line that electrically connects the main surface electrode and the upper surface electrode. A heat spreader mounted on the main surface electrode and the upper surface electrode via a heat conductive material, a semiconductor element main surface electrode side structure, and the semiconductor element main surface electrode side structure, The power converter device which has the board | substrate which carried out the soldering mounting on each back surface of the said insulator area | region, and the heat radiator which mounted the said board | substrate through the insulator. On one surface side of the heat spreader, a first semiconductor element main surface electrode side structure composed of the semiconductor element main surface electrode side structure, a first substrate composed of the substrate, and a first radiator composed of the heat radiator, On the other surface side of the heat spreader, a second semiconductor element main surface electrode side structure composed of the semiconductor element main surface electrode side structure, a second substrate composed of the substrate, and a second radiator composed of the heat radiator are laminated. 2. The power conversion device according to claim 1, wherein the first semiconductor element main surface electrode side structure and the second semiconductor element main surface electrode side structure are opposed to each other with the heat spreader as a boundary. Either or both of the first semiconductor element and the second semiconductor element in which the first semiconductor element main surface electrode side structure and the second semiconductor element main surface electrode side structure operate differently electrically. The power conversion device according to claim 2, wherein the first semiconductor element and the second semiconductor element are arranged without facing each other. 4. The power conversion device according to claim 1, wherein a second wire bonding line that functions as the heat transfer region is disposed between the wire bonding lines of the heat spreader. 5. The power converter according to claim 4, wherein the heat spreader is formed such that a connection portion with the second wire bonding line is thicker than a bonding portion with the upper surface electrode. 6. The device according to claim 1, comprising at least one of a projecting member protruding from a main surface of the substrate and contacting a side surface of the insulator region, and a spacer disposed between the back surface side of the insulator region and the substrate. The power converter device as described in any one. The power converter according to any one of claims 1 to 6, wherein the upper surface electrode is formed in a flat plate shape, and the insulator region is formed by joining a plurality of rectangular flat plates in a frame shape. The power converter according to claim 2, wherein the first semiconductor element has a control terminal, and the control terminal is electrically connected to a circuit board disposed on the upper surface electrode. The said 1st semiconductor element has a control terminal, it has a wiring pattern in the surface facing the said 1st semiconductor element of the said heat spreader, The said control terminal and the said wiring pattern are electrically connected. The power converter device as described in any one. Each of the first semiconductor element main surface electrode side structure and the second semiconductor element main surface electrode side structure has either or both of the first semiconductor element and the second semiconductor element, and 1 semiconductor element and the second semiconductor element are stacked so as not to face each other,
10. The power conversion device according to claim 2, wherein the first semiconductor element and the second semiconductor element are arranged adjacent to each other and operate differently electrically. The power converter according to claim 1, wherein the upper surface electrode includes an insulating material and a metal wiring board . The power converter according to any one of claims 1 to 11, wherein the upper surface electrode and the heat spreader are joined by an adhesive material having electrical conductivity and thermal conductivity. The first semiconductor element is an insulated gate bipolar transistor (IGBT) or a metal silicon oxide field effect transmitter (MOSFET), and the second semiconductor element is a diode, and constitutes a switch circuit forming an inverter circuit. The power conversion device according to any one of 12. A first step of forming the semiconductor element main surface electrode-side structure according to any one of claims 1 to 13;
A second step of mounting the semiconductor element main surface electrode side structure on a substrate;
A third step of bonding the semiconductor element main surface electrode side structure to a heat spreader,
The manufacturing method of the power converter device which performs the said 2nd process and said 3rd process after the said 1st process. Protruding members project from the main surface of the substrate, and a spacer is disposed between the back surface side of the insulator region for bonding and fixing the semiconductor element and the upper surface electrode, and the substrate,
The method for manufacturing a power conversion device according to claim 14, wherein the insulator region is brought into contact with the protruding member and the semiconductor element main surface electrode side structure is soldered and mounted on the substrate via the spacer.

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