JP7188689B2 - 発光装置およびプロジェクター - Google Patents

発光装置およびプロジェクター Download PDF

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Publication number
JP7188689B2
JP7188689B2 JP2018147680A JP2018147680A JP7188689B2 JP 7188689 B2 JP7188689 B2 JP 7188689B2 JP 2018147680 A JP2018147680 A JP 2018147680A JP 2018147680 A JP2018147680 A JP 2018147680A JP 7188689 B2 JP7188689 B2 JP 7188689B2
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Japan
Prior art keywords
columnar
light
emitting device
layer
light emitting
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JP2018147680A
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English (en)
Japanese (ja)
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JP2020024978A5 (enExample
JP2020024978A (ja
Inventor
大毅 西岡
克巳 岸野
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Seiko Epson Corp
Sophia School Corp
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Seiko Epson Corp
Sophia School Corp
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Priority to JP2018147680A priority Critical patent/JP7188689B2/ja
Priority to CN201910706713.2A priority patent/CN110808536B/zh
Priority to US16/531,266 priority patent/US10734789B2/en
Publication of JP2020024978A publication Critical patent/JP2020024978A/ja
Publication of JP2020024978A5 publication Critical patent/JP2020024978A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2013—Plural light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2033—LED or laser light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18319—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement comprising a periodical structure in lateral directions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B33/00—Colour photography, other than mere exposure or projection of a colour film
    • G03B33/10—Simultaneous recording or projection
    • G03B33/12—Simultaneous recording or projection using beam-splitting or beam-combining systems, e.g. dichroic mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/20—Lasers with a special output beam profile or cross-section, e.g. non-Gaussian
    • H01S2301/203—Lasers with a special output beam profile or cross-section, e.g. non-Gaussian with at least one hole in the intensity distribution, e.g. annular or doughnut mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/02—MBE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Projection Apparatus (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2018147680A 2018-08-06 2018-08-06 発光装置およびプロジェクター Active JP7188689B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018147680A JP7188689B2 (ja) 2018-08-06 2018-08-06 発光装置およびプロジェクター
CN201910706713.2A CN110808536B (zh) 2018-08-06 2019-08-01 发光装置和投影仪
US16/531,266 US10734789B2 (en) 2018-08-06 2019-08-05 Light emitting device and projector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018147680A JP7188689B2 (ja) 2018-08-06 2018-08-06 発光装置およびプロジェクター

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JP2020024978A JP2020024978A (ja) 2020-02-13
JP2020024978A5 JP2020024978A5 (enExample) 2021-07-26
JP7188689B2 true JP7188689B2 (ja) 2022-12-13

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US (1) US10734789B2 (enExample)
JP (1) JP7188689B2 (enExample)
CN (1) CN110808536B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6973452B2 (ja) * 2019-07-30 2021-12-01 セイコーエプソン株式会社 発光装置、光源モジュールおよびプロジェクター
US20210168338A1 (en) * 2019-11-29 2021-06-03 Seiko Epson Corporation Light emitting apparatus and projector
FR3106669B1 (fr) * 2020-01-24 2022-08-05 Commissariat Energie Atomique Dispositif de projection distribuée de lumière
TWI881068B (zh) * 2020-03-11 2025-04-21 日商奈米系統解決股份有限公司 曝光裝置
JP7557763B2 (ja) * 2020-07-31 2024-09-30 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7515109B2 (ja) * 2020-10-06 2024-07-12 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7320794B2 (ja) * 2021-03-15 2023-08-04 セイコーエプソン株式会社 発光装置、プロジェクター、およびディスプレイ
JP7725917B2 (ja) 2021-07-29 2025-08-20 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7760879B2 (ja) * 2021-09-29 2025-10-28 セイコーエプソン株式会社 発光装置、プロジェクター及びディスプレイ

Citations (7)

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Publication number Priority date Publication date Assignee Title
JP2004296538A (ja) 2003-03-25 2004-10-21 Japan Science & Technology Agency ２次元フォトニック結晶面発光レーザ
JP2006352148A (ja) 2005-06-17 2006-12-28 Philips Lumileds Lightng Co Llc 半導体発光装置に成長させたフォトニック結晶
JP2010219307A (ja) 2009-03-17 2010-09-30 Seiko Epson Corp 光源装置、プロジェクター
JP2013239690A (ja) 2012-04-16 2013-11-28 Sharp Corp 超格子構造、前記超格子構造を備えた半導体装置および半導体発光装置、ならびに前記超格子構造の製造方法
JP2016527706A (ja) 2013-06-07 2016-09-08 グロ アーベーＧｌｏ Ａｂ マルチカラーｌｅｄ及びその製造方法
JP2017168594A (ja) 2016-03-15 2017-09-21 株式会社東芝 面発光量子カスケードレーザ
JP2018142660A (ja) 2017-02-28 2018-09-13 学校法人上智学院 光デバイスおよび光デバイスの製造方法

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US5168401A (en) * 1991-05-07 1992-12-01 Spectra Diode Laboratories, Inc. Brightness conserving optical system for modifying beam symmetry
US6864570B2 (en) * 1993-12-17 2005-03-08 The Regents Of The University Of California Method and apparatus for fabricating self-assembling microstructures
JP2001111176A (ja) * 1999-10-07 2001-04-20 Hamamatsu Photonics Kk 半導体レーザ装置
JP4442103B2 (ja) * 2003-03-24 2010-03-31 ソニー株式会社 面発光レーザ素子及びその製造方法
KR101128944B1 (ko) 2004-03-05 2012-03-27 로무 가부시키가이샤 2차원 포토닉 결정 면발광 레이저광원
TWI500072B (zh) * 2004-08-31 2015-09-11 Sophia School Corp 發光元件之製造方法
JP2012094443A (ja) * 2010-10-28 2012-05-17 Stanley Electric Co Ltd Ｌｅｄランプ
JP5909162B2 (ja) 2012-07-24 2016-04-26 日本放送協会 発光素子
JP6103202B2 (ja) * 2013-02-27 2017-03-29 セイコーエプソン株式会社 半導体発光装置、スーパールミネッセントダイオード、およびプロジェクター

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004296538A (ja) 2003-03-25 2004-10-21 Japan Science & Technology Agency ２次元フォトニック結晶面発光レーザ
JP2006352148A (ja) 2005-06-17 2006-12-28 Philips Lumileds Lightng Co Llc 半導体発光装置に成長させたフォトニック結晶
JP2010219307A (ja) 2009-03-17 2010-09-30 Seiko Epson Corp 光源装置、プロジェクター
JP2013239690A (ja) 2012-04-16 2013-11-28 Sharp Corp 超格子構造、前記超格子構造を備えた半導体装置および半導体発光装置、ならびに前記超格子構造の製造方法
JP2016527706A (ja) 2013-06-07 2016-09-08 グロ アーベーＧｌｏ Ａｂ マルチカラーｌｅｄ及びその製造方法
JP2017168594A (ja) 2016-03-15 2017-09-21 株式会社東芝 面発光量子カスケードレーザ
JP2018142660A (ja) 2017-02-28 2018-09-13 学校法人上智学院 光デバイスおよび光デバイスの製造方法

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CN110808536B (zh) 2023-07-11
CN110808536A (zh) 2020-02-18
US20200044418A1 (en) 2020-02-06
JP2020024978A (ja) 2020-02-13
US10734789B2 (en) 2020-08-04

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