JP7178496B2 - 垂直拡散プレートを有するコンデンサ構造 - Google Patents
垂直拡散プレートを有するコンデンサ構造 Download PDFInfo
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- JP7178496B2 JP7178496B2 JP2021530779A JP2021530779A JP7178496B2 JP 7178496 B2 JP7178496 B2 JP 7178496B2 JP 2021530779 A JP2021530779 A JP 2021530779A JP 2021530779 A JP2021530779 A JP 2021530779A JP 7178496 B2 JP7178496 B2 JP 7178496B2
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- 239000003990 capacitor Substances 0.000 title claims description 99
- 238000009792 diffusion process Methods 0.000 title claims description 91
- 239000000758 substrate Substances 0.000 claims description 62
- 239000004065 semiconductor Substances 0.000 claims description 47
- 238000002955 isolation Methods 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 description 21
- 238000000034 method Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66174—Capacitors with PN or Schottky junction, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
- H01L27/0682—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors comprising combinations of capacitors and resistors
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- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Description
Claims (19)
- コンデンサ構造であって、
第1の導電型の半導体基板と、
前記半導体基板内に配置された前記第1の導電型の第1の垂直拡散プレートと、
前記半導体基板内に配置された第1のシャロー・トレンチ・アイソレーション(STI)構造であって、前記第1の垂直拡散プレートを取り囲む、第1のSTI構造と、
前記半導体基板内に配置された前記第1の導電型の第2の垂直拡散プレートであって、前記第1のSTI構造を取り囲む、第2の垂直拡散プレートと、
前記半導体基板内に配置された第2の導電型のイオンウェルと、を備え、
前記イオンウェルは、前記第1の垂直拡散プレート、前記第1のSTI構造、および前記第2の垂直拡散プレートの真下に配置され、
コンデンサが、前記第1の垂直拡散プレートと前記第2の垂直拡散プレートとの間に形成され、このときこれらプレート間に挟まれた前記第1のSTI構造は、コンデンサ誘電体層として作用する、コンデンサ構造。 - 前記第1の導電型がP型であり、前記第2の導電型がN型であるか、または前記第1の導電型がN型であり、前記第2の導電型がP型である、請求項1に記載のコンデンサ構造。
- 前記イオンウェルが、前記第1の垂直拡散プレートを前記第2の垂直拡散プレートから絶縁する、請求項1に記載のコンデンサ構造。
- 前記第1の垂直拡散プレートが、第1の電圧に電気的に結合され、前記第2の垂直拡散プレートが、第2の電圧に電気的に結合され、前記第2の電圧は、前記第1の電圧よりも高い、請求項1に記載のコンデンサ構造。
- 前記第1の垂直拡散プレートの表面に配置された前記第1の導電型の第1の高濃度ドープ領域と、
前記第2の垂直拡散プレートの表面に配置された前記第1の導電型の第2の高濃度ドープ領域と、をさらに備える、請求項1に記載のコンデンサ構造。 - 前記半導体基板内に配置された第2のシャロー・トレンチ・アイソレーション(STI)構造であって、前記第2の垂直拡散プレート、前記第1のSTI構造、および前記第1の垂直拡散プレートを取り囲む、第2のSTI構造をさらに備える、請求項1に記載のコンデンサ構造。
- 前記第2のSTI構造、前記第2の垂直拡散プレート、前記第1のSTI構造が、前記第1の垂直拡散プレートと同心円状に配置される、請求項6に記載のコンデンサ構造。
- 前記第1の垂直拡散プレートおよび前記第2の垂直拡散プレートが、前記第1のSTI構造および前記第2のSTI構造によって画定され絶縁されたシリコン活性領域である、請求項6に記載のコンデンサ構造。
- 前記第1のSTI構造または前記第2のSTI構造の直接上面に受動素子をさらに備える、請求項6に記載のコンデンサ構造。
- 前記受動素子が、抵抗器を含む、請求項9に記載のコンデンサ構造。
- 前記受動素子が、ポリシリコンを含む、請求項9に記載のコンデンサ構造。
- 前記第2のSTI構造、前記第2の垂直拡散プレート、前記第1のSTI構造、および前記第1の垂直拡散プレートを取り囲む第3の垂直拡散プレートと、
前記第3の垂直拡散プレート、前記第2のSTI構造、前記第2の垂直拡散プレート、前記第1のSTI構造、および前記第1の垂直拡散プレートを取り囲む第3のシャロー・トレンチ・アイソレーション(STI)構造と、をさらに備える、請求項6に記載のコンデンサ構造。 - 前記第3のSTI構造、前記第3の垂直拡散プレート、前記第2のSTI構造、前記第2の垂直拡散プレート、前記第1のSTI構造、および前記第1の垂直拡散プレートを取り囲む第4の垂直拡散プレートと、
前記第4の垂直拡散プレート、前記第3のSTI構造、前記第3の垂直拡散プレート、前記第2のSTI構造、前記第2の垂直拡散プレート、前記第1のSTI構造、および前記第1の垂直拡散プレートを取り囲む第4のシャロー・トレンチ・アイソレーション(STI)構造と、をさらに備える、請求項12に記載のコンデンサ構造。 - 前記第2の垂直拡散プレート、前記第4の垂直拡散プレートおよび前記イオンウェルが、アノードに電気的に結合され、前記第1の垂直拡散プレートおよび前記第3の垂直拡散プレートが、カソードに電気的に結合される、請求項13に記載のコンデンサ構造。
- 前記イオンウェルが、前記第4のSTI構造を取り囲む環状垂直部分を含む、請求項13に記載のコンデンサ構造。
- 前記半導体基板が、シリコン基板である、請求項1に記載のコンデンサ構造。
- コンデンサ構造であって、
第1の導電型の半導体基板と、
前記半導体基板内に配置された前記第1の導電型の第1の垂直拡散プレートと、
前記半導体基板内に配置された第1のシャロー・トレンチ・アイソレーション(STI)構造であって、前記第1の垂直拡散プレートを取り囲む、第1のSTI構造と、
前記半導体基板内に配置された前記第1の導電型の第2の垂直拡散プレートであって、前記第1のSTI構造を取り囲む、第2の垂直拡散プレートと、
前記半導体基板内に配置された第2の導電型のイオンウェルと、を備え、
前記イオンウェルは、前記第1の垂直拡散プレート、前記第1のSTI構造、および前記第2の垂直拡散プレートの真下に配置され、前記第2の垂直拡散プレートは、前記コンデンサ構造のアノードに電気的に結合され、前記第1の垂直拡散プレートは、前記コンデンサ構造のカソードに電気的に結合され、
コンデンサが、前記第1の垂直拡散プレートと前記第2の垂直拡散プレートとの間に形成され、このときこれらプレート間に挟まれた前記第1のSTI構造は、コンデンサ誘電体層として作用する、コンデンサ構造。 - 前記半導体基板内に配置された第2のシャロー・トレンチ・アイソレーション(STI)構造であって、前記第2の垂直拡散プレート、前記第1のSTI構造、および前記第1の垂直拡散プレートを取り囲む、第2のSTI構造をさらに備える、請求項17に記載のコンデンサ構造。
- 前記第2のSTI構造、前記第2の垂直拡散プレート、前記第1のSTI構造が、前記第1の垂直拡散プレートと同心円状に配置される、請求項18に記載のコンデンサ構造。
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PCT/CN2019/073987 WO2020154977A1 (en) | 2019-01-30 | 2019-01-30 | Capacitor structure having vertical diffusion plates |
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US (2) | US10937912B2 (ja) |
EP (1) | EP3850665B1 (ja) |
JP (1) | JP7178496B2 (ja) |
KR (1) | KR102635376B1 (ja) |
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CN113039643A (zh) | 2020-09-02 | 2021-06-25 | 长江存储科技有限责任公司 | 半导体器件中的片上电容器及其形成方法 |
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US11854880B2 (en) * | 2021-02-25 | 2023-12-26 | Changxin Memory Technologies, Inc. | Memory device and method for manufacturing the same |
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TW202029515A (zh) | 2020-08-01 |
EP3850665A1 (en) | 2021-07-21 |
CN111261617A (zh) | 2020-06-09 |
US20210184055A1 (en) | 2021-06-17 |
CN109891585A (zh) | 2019-06-14 |
KR102635376B1 (ko) | 2024-02-07 |
KR20210071042A (ko) | 2021-06-15 |
EP3850665A4 (en) | 2022-04-13 |
WO2020154977A1 (en) | 2020-08-06 |
CN109891585B (zh) | 2020-03-27 |
US11456390B2 (en) | 2022-09-27 |
US10937912B2 (en) | 2021-03-02 |
TWI682551B (zh) | 2020-01-11 |
EP3850665B1 (en) | 2023-11-15 |
CN111261617B (zh) | 2021-02-19 |
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JP2022509248A (ja) | 2022-01-20 |
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