JP7173960B2 - 太陽電池用ペースト組成物 - Google Patents

太陽電池用ペースト組成物 Download PDF

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Publication number
JP7173960B2
JP7173960B2 JP2019509193A JP2019509193A JP7173960B2 JP 7173960 B2 JP7173960 B2 JP 7173960B2 JP 2019509193 A JP2019509193 A JP 2019509193A JP 2019509193 A JP2019509193 A JP 2019509193A JP 7173960 B2 JP7173960 B2 JP 7173960B2
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Prior art keywords
aluminum
silicon
solar cell
paste composition
powder
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Japanese (ja)
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JPWO2018180441A1 (ja
Inventor
マルワン ダムリン
正博 中原
紹太 鈴木
直哉 森下
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TOYO ALMINIUM KABUSHIKI KAISHA
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TOYO ALMINIUM KABUSHIKI KAISHA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
  • Glass Compositions (AREA)
JP2019509193A 2017-03-27 2018-03-13 太陽電池用ペースト組成物 Active JP7173960B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017061532 2017-03-27
JP2017061532 2017-03-27
PCT/JP2018/009621 WO2018180441A1 (ja) 2017-03-27 2018-03-13 太陽電池用ペースト組成物

Publications (2)

Publication Number Publication Date
JPWO2018180441A1 JPWO2018180441A1 (ja) 2020-02-06
JP7173960B2 true JP7173960B2 (ja) 2022-11-16

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Family Applications (1)

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JP2019509193A Active JP7173960B2 (ja) 2017-03-27 2018-03-13 太陽電池用ペースト組成物

Country Status (5)

Country Link
JP (1) JP7173960B2 (ko)
KR (1) KR102485772B1 (ko)
CN (1) CN110462845B (ko)
TW (1) TWI759447B (ko)
WO (1) WO2018180441A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020080341A (ja) * 2018-11-12 2020-05-28 東洋アルミニウム株式会社 ペースト組成物
JP2021057358A (ja) * 2019-09-26 2021-04-08 東洋アルミニウム株式会社 太陽電池用アルミニウムペースト
US20220077328A1 (en) * 2020-09-08 2022-03-10 Toyo Aluminium Kabushiki Kaisha Conductive paste and method for producing topcon solar cell
KR102285734B1 (ko) * 2020-11-27 2021-08-05 주식회사 제이솔루션 태양전지 모듈용 전도성 첨가제 및 이의 제조방법

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008294209A (ja) 2007-05-24 2008-12-04 Mitsubishi Electric Corp 太陽電池基板の製造方法
JP2010241650A (ja) 2009-04-08 2010-10-28 Mitsubishi Materials Techno Corp シリコンインゴットの製造方法、シリコンインゴットの製造装置及びシリコン結晶成長方法
JP2013143499A (ja) 2012-01-11 2013-07-22 Toyo Aluminium Kk ペースト組成物
JP2015050349A (ja) 2013-09-02 2015-03-16 株式会社ノリタケカンパニーリミテド 太陽電池素子およびその製造方法並びにファイヤースルー用アルミニウムペースト
JP2015191971A (ja) 2014-03-27 2015-11-02 株式会社ノリタケカンパニーリミテド ファイヤースルー用アルミニウムペーストおよび太陽電池素子
WO2016047564A1 (ja) 2014-09-22 2016-03-31 京セラ株式会社 太陽電池素子
US20160108500A1 (en) 2014-10-15 2016-04-21 Hyundai Motor Company Alloy for die-cast vehicle parts and method for manufacturing the same
JP2016533635A (ja) 2013-09-25 2016-10-27 常州天合光能有限公司 結晶シリコン太陽電池の背面ブリッジ式コンタクト電極及びその製造方法

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JP3283550B2 (ja) * 1990-10-31 2002-05-20 住友電気工業株式会社 初晶シリコンの最大結晶粒径が１０μｍ以下の過共晶アルミニウム−シリコン系合金粉末の製造方法
JP2926976B2 (ja) * 1990-11-16 1999-07-28 住友電気工業株式会社 過共晶アルミニウム―ケイ素系ビレツトの製造方法
JP3310370B2 (ja) * 1993-01-27 2002-08-05 株式会社半導体エネルギー研究所 アモルファス太陽電池およびその作製方法
US5789077A (en) * 1994-06-27 1998-08-04 Ebara Corporation Method of forming carbide-base composite coatings, the composite coatings formed by that method, and members having thermally sprayed chromium carbide coatings
JP3784858B2 (ja) * 1995-06-22 2006-06-14 日立粉末冶金株式会社 アルミニウム系耐摩耗性焼結合金の製造方法
US6792187B2 (en) * 2002-12-17 2004-09-14 Corning Incorporated Ca-Al-Si oxide glasses and optical components containing the same
FR2857378B1 (fr) * 2003-07-10 2005-08-26 Pechiney Aluminium Piece moulee en alliage d'aluminium a haute resistance a chaud
CN101603162B (zh) * 2009-07-29 2012-05-30 福州大学 高硅铝合金的物理法变质工艺
CN102254587B (zh) * 2011-05-17 2014-05-28 陈晓东 一种硅太阳能电池铝背场用浆料及其制备方法
JP5856764B2 (ja) * 2011-06-21 2016-02-10 学校法人常翔学園 過共晶アルミニウム−シリコン合金圧延板成形品およびその製造方法
JP6214400B2 (ja) * 2012-02-02 2017-10-18 東洋アルミニウム株式会社 ペースト組成物
TWI636577B (zh) * 2013-02-07 2018-09-21 茂迪股份有限公司 太陽能電池及其模組
EP2787510B1 (en) * 2013-04-02 2018-05-30 Heraeus Deutschland GmbH & Co. KG Particles comprising Al, Si and Mg in electro-conductive pastes and solar cell preparation
JP2016213284A (ja) * 2015-05-01 2016-12-15 東洋アルミニウム株式会社 Ｐｅｒｃ型太陽電池用アルミニウムペースト組成物

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008294209A (ja) 2007-05-24 2008-12-04 Mitsubishi Electric Corp 太陽電池基板の製造方法
JP2010241650A (ja) 2009-04-08 2010-10-28 Mitsubishi Materials Techno Corp シリコンインゴットの製造方法、シリコンインゴットの製造装置及びシリコン結晶成長方法
JP2013143499A (ja) 2012-01-11 2013-07-22 Toyo Aluminium Kk ペースト組成物
JP2015050349A (ja) 2013-09-02 2015-03-16 株式会社ノリタケカンパニーリミテド 太陽電池素子およびその製造方法並びにファイヤースルー用アルミニウムペースト
JP2016533635A (ja) 2013-09-25 2016-10-27 常州天合光能有限公司 結晶シリコン太陽電池の背面ブリッジ式コンタクト電極及びその製造方法
JP2015191971A (ja) 2014-03-27 2015-11-02 株式会社ノリタケカンパニーリミテド ファイヤースルー用アルミニウムペーストおよび太陽電池素子
WO2016047564A1 (ja) 2014-09-22 2016-03-31 京セラ株式会社 太陽電池素子
US20160108500A1 (en) 2014-10-15 2016-04-21 Hyundai Motor Company Alloy for die-cast vehicle parts and method for manufacturing the same

Also Published As

Publication number Publication date
TW201836162A (zh) 2018-10-01
CN110462845B (zh) 2023-01-13
JPWO2018180441A1 (ja) 2020-02-06
KR20190125971A (ko) 2019-11-07
WO2018180441A1 (ja) 2018-10-04
TWI759447B (zh) 2022-04-01
CN110462845A (zh) 2019-11-15
KR102485772B1 (ko) 2023-01-05

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