JP7164777B2 - ウェハ上の欠陥、金属粒子汚染及び膜成長を抑制するシステム及び方法 - Google Patents
ウェハ上の欠陥、金属粒子汚染及び膜成長を抑制するシステム及び方法 Download PDFInfo
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- JP7164777B2 JP7164777B2 JP2021525737A JP2021525737A JP7164777B2 JP 7164777 B2 JP7164777 B2 JP 7164777B2 JP 2021525737 A JP2021525737 A JP 2021525737A JP 2021525737 A JP2021525737 A JP 2021525737A JP 7164777 B2 JP7164777 B2 JP 7164777B2
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Description
本出願は、2018年11月13日に出願された米国仮特許出願第62/760,589号明細書からの優先権の利益を主張するものであり、この仮特許出願の内容全体が参照により本明細書に組み込まれる。
Claims (16)
- 基板を処理する方法であって、
基板を受け取るステップであって、前記基板は、表側面と、裏側面と、側端面とを有する、ステップと、
前記表側面、前記裏側面及び前記側端面を自己組織化単分子膜(SAM)でコーティングするステップと、
関心対象エリアを化学線に曝露させるステップであって、前記化学線は、前記関心対象エリア内において、前記自己組織化単分子膜内での脱保護反応を引き起こす、ステップと、
前記自己組織化単分子膜を、前記関心対象エリアから、前記自己組織化単分子膜が前記基板の残りの表面に残っている一方で除去するステップと、を含み、
前記関心対象エリアは、前記表側面の中央領域であり、前記中央領域は、前記表側面の表面積より小さい表面積を有する、
方法。 - 前記自己組織化単分子膜は、フッ素化材料である、請求項1に記載の方法。
- 自己組織化単分子膜は、蒸着によってコーティングされる、請求項1に記載の方法。
- 金属含有膜をスピンオン堆積によって前記基板上に堆積させるステップであって、前記金属含有膜は、前記自己組織化単分子膜でコーティングされた表面に完全には付着しない、ステップを更に含む、請求項1に記載の方法。
- 前記自己組織化単分子膜は、所定の光波長に反応する発色団を含む、請求項1に記載の方法。
- 前記基板は、ベベル端面を更に含み得る、請求項1に記載の方法。
- 前記関心対象エリアは、前記表側面の内側領域であり、前記内側領域は、前記表側面の中心点から前記表側面の端部領域まで延び、前記表側面の前記端部領域は、前記表側面の外周部から前記表側面の中心点に向かって所定の距離まで延びる環状領域である、請求項1に記載の方法。
- 前記自己組織化単分子膜には、疎水性である初期状態がある、請求項1に記載の方法。
- 前記関心対象エリアを化学線に曝露させるステップは、光子線量を前記関心対象エリアに送達するステップを含む、請求項1に記載の方法。
- 前記化学線の波長は、266nm又は365nmである、請求項9に記載の方法。
- 前記光子線量は、前記関心対象エリアにおいて前記SAMを脱離させる、請求項9に記載の方法。
- 前記SAMの付着しない部分を除去するステップと、
前記SAMの残りの部分を付着促進剤として使用するステップとを更に含む、請求項1に記載の方法。 - 基板を処理する方法であって、
基板を受け取るステップであって、前記基板は、表側面と、裏側面と、側端面とを有する、ステップと、
前記表側面のターゲット領域を犠牲膜でコーティングするステップであって、前記犠牲膜は、特定の材料が前記ターゲット領域に付着することを阻止する表面を有する、ステップと、
前記表側面、前記裏側面及び前記側端面を自己組織化単分子膜でコーティングするステップであって、前記自己組織化単分子膜は、前記犠牲膜に付置せず、前記自己組織化単分子膜は、疎水性である、ステップと、
前記表側面の前記ターゲット領域から前記犠牲膜を除去するステップと、を含み、
前記ターゲット領域は、前記表側面の表面積より小さい表面積を有する中央領域である、 方法。 - 基板を処理する方法であって、
基板を受け取るステップであって、前記基板は、表側面と、裏側面と、側端面とを有する、ステップと、
前記表側面のターゲット領域を犠牲膜でコーティングするステップと、
前記表側面、前記裏側面及び前記側端面を自己組織化単分子膜でコーティングするステップであって、前記自己組織化単分子膜は、疎水性である、ステップと、
前記表側面の前記ターゲット領域から前記犠牲膜を除去するステップであって、前記犠牲膜に付着された前記自己組織化単分子膜も除去し、前記ターゲット領域が前記自己組織化単分子膜から解放されることをもたらす、ステップと、を含み、
前記ターゲット領域は、前記表側面の表面積より小さい表面積を有する前記表側面の中央領域である、 方法。 - 前記自己組織化単分子膜は、蒸着によってコーティングされる、請求項14に記載の方法。
- 前記自己組織化単分子膜は、フッ素化材料である、請求項14に記載の方法。
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