JP7149767B2 - ＳｉＣ単結晶の貼合方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶成長用台座 - Google Patents

ＳｉＣ単結晶の貼合方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶成長用台座 Download PDF

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JP7149767B2
JP7149767B2 JP2018152319A JP2018152319A JP7149767B2 JP 7149767 B2 JP7149767 B2 JP 7149767B2 JP 2018152319 A JP2018152319 A JP 2018152319A JP 2018152319 A JP2018152319 A JP 2018152319A JP 7149767 B2 JP7149767 B2 JP 7149767B2
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single crystal
sic single
atomic arrangement
pedestal
sic
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JP2020026374A (ja
JP2020026374A5 (https=
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陽平 藤川
秀隆 鷹羽
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Denso Corp
Resonac Holdings Corp
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Showa Denko KK
Denso Corp
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Priority to PCT/JP2019/031803 priority patent/WO2020036167A1/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2018152319A 2018-08-13 2018-08-13 ＳｉＣ単結晶の貼合方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶成長用台座 Active JP7149767B2 (ja)

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JP2018152319A JP7149767B2 (ja) 2018-08-13 2018-08-13 ＳｉＣ単結晶の貼合方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶成長用台座
PCT/JP2019/031803 WO2020036167A1 (ja) 2018-08-13 2019-08-13 ＳｉＣ単結晶の貼合方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶成長用台座

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JP2018152319A JP7149767B2 (ja) 2018-08-13 2018-08-13 ＳｉＣ単結晶の貼合方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶成長用台座

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JP2020026374A JP2020026374A (ja) 2020-02-20
JP2020026374A5 JP2020026374A5 (https=) 2021-07-26
JP7149767B2 true JP7149767B2 (ja) 2022-10-07

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
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JP7433586B2 (ja) * 2018-08-13 2024-02-20 株式会社レゾナック ＳｉＣ単結晶の加工方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶
EP4060098A1 (de) * 2021-03-19 2022-09-21 SiCrystal GmbH Herstellungsverfahren für einen sic-volumeneinkristall inhomogener schraubenversetzungsverteilung und sic-substrat

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102543718A (zh) 2010-12-14 2012-07-04 北京天科合达蓝光半导体有限公司 一种降低碳化硅晶片翘曲度、弯曲度的方法
JP2015117143A (ja) 2013-12-17 2015-06-25 住友電気工業株式会社 単結晶の製造方法
JP2020026373A (ja) 2018-08-13 2020-02-20 昭和電工株式会社 ＳｉＣ単結晶の加工方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6373104A (ja) * 1986-09-17 1988-04-02 Toshiba Corp 格子彎曲測定用ｘ線回折装置
JPH07101679B2 (ja) * 1988-11-01 1995-11-01 三菱電機株式会社 電子デバイス用ウエハ，ウエハ用棒状基材および電子デバイス
JP3239884B2 (ja) * 1989-12-12 2001-12-17 ソニー株式会社 半導体基板の製造方法
JP6390628B2 (ja) * 2016-01-12 2018-09-19 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法及び製造装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102543718A (zh) 2010-12-14 2012-07-04 北京天科合达蓝光半导体有限公司 一种降低碳化硅晶片翘曲度、弯曲度的方法
JP2015117143A (ja) 2013-12-17 2015-06-25 住友電気工業株式会社 単結晶の製造方法
JP2020026373A (ja) 2018-08-13 2020-02-20 昭和電工株式会社 ＳｉＣ単結晶の加工方法、ＳｉＣインゴットの製造方法及びＳｉＣ単結晶

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JP2020026374A (ja) 2020-02-20

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