JP7140835B2 - Iii-窒化物マルチ波長発光ダイオード - Google Patents
Iii-窒化物マルチ波長発光ダイオード Download PDFInfo
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Description
Claims (9)
- 発光ダイオード(LED)アレイであって、
第1の組のコンタクトを有する第1の画素、第2の組のコンタクトを有する第2の画素、および第3の組のコンタクトを有する第3の画素と、
前記第1の画素と前記第2の画素を分離し、基板まで延在する第1のトレンチと、
前記第2の画素と前記第3の画素とを分離する第2のトレンチであって、前記第2のトレンチは前記基板まで延在する、第2のトレンチと、
前記第1の画素、前記第2の画素、および前記第3の画素の少なくとも一部に形成された誘電体層と、
を有し、
前記第1の画素は、高さを有し、前記第2の画素は、高さを有し、前記第3の画素は、高さを有し、前記第3の画素の高さは、前記第1の画素の高さおよび前記第2の画素の高さよりも大きく、前記第2の画素の高さは、前記第1の画素の高さよりも大きく、
前記誘電体層の少なくとも一部は、前記第1の組のコンタクトの第1コンタクトから、前記第2の組のコンタクトの第4コンタクトまで延在し、
前記第1の画素は、
前記基板上の第1のLEDと、
前記第1のLED上の第1のトンネル接合と、
前記トンネル接合上の第1の半導体層と、
を有し、
前記第1の組のコンタクトの前記第1コンタクトは、前記第1の半導体層に接続され、前記第1の組のコンタクトの第2コンタクトは、前記第1のLED内の前記第1の半導体層と同じ導電型の半導体層に接続され、
前記第2の画素は、
前記基板上の第1のLEDと、
前記第1のLED上の第1のトンネル接合と、
前記第1のトンネル接合上の第2のLEDと、
前記第2のLEDの第2のトンネル接合と、
前記第2のトンネル接合上の第2の半導体層と、
を有し、
前記第2の組のコンタクトの第3コンタクトは、前記第2の半導体層に接続され、
前記第2の組のコンタクトの前記第4コンタクトは、前記第2のLED内の前記第2の半導体層と同じ導電型の半導体層に接続され、
前記第1の組のコンタクトの前記第1コンタクトは、前記第1のトレンチを介して前記第2の組のコンタクトの前記第4コンタクトと対面し、該第4コンタクトと同じ高さにあり、
前記第3の画素は、
前記基板上の第1のLEDと、
前記第1のLED上の第1のトンネル接合と、
前記第1のトンネル接合上の第2のLEDと、
前記第2のLEDの第2のトンネル接合と、
前記第2のトンネル接合上の第3のLEDと、
を有し、
前記第3の組のコンタクトの第5コンタクトは、前記第2の半導体層と同じ導電型の半導体層に接続され、
前記第2の組のコンタクトの前記第3コンタクトは、前記第2のトレンチを介して前記第3の組のコンタクトの前記第5コンタクトと対面し、該第5コンタクトと同じ高さにある、LEDアレイ。 - 前記第1の組のコンタクトは、前記第2の画素および前記第3の画素とは独立に、第1の電圧を受信するように構成される、請求項1に記載のLEDアレイ。
- 前記第2の組のコンタクトは、前記第1の画素および前記第3の画素とは独立に、第2の電圧を受信するように構成される、請求項1に記載のLEDアレイ。
- 前記第3の組のコンタクトは、前記第1の画素および前記第2の画素とは独立に、第3の電圧を受信するように構成される、請求項1に記載のLEDアレイ。
- 前記第1の画素は、第1の波長の光を放射するように構成され、前記第2の画素は、第2の波長の光を放射するように構成され、前記第3の画素は、第3の波長の光を放射するように構成される、請求項1に記載のLEDアレイ。
- システムであって、
基板まで延在する1または2以上のトレンチにより分離された、第1の画素、第2の画素、および第3の画素を有する、発光ダイオード(LED)アレイであって、
前記第1の画素は、高さを有し、前記第2の画素は、高さを有し、前記第3の画素は、高さを有し、前記第3の画素の高さは、前記第1の画素の高さおよび前記第2の画素の高さよりも大きく、前記第2の画素の高さは、前記第1の画素の高さよりも大きい、
LEDアレイと、
前記第1の画素上の第1の組のコンタクトに結合された第1の組の電極、前記第2の画素上の第2の組のコンタクトに結合された第2の組の電極、および前記第3の画素上の第3の組のコンタクトに結合された第3の組の電極を有する、LED装置取り付け領域と、
前記第1の組の電極、前記第2の組の電極、および前記第3の組の電極の1または2以上に、独立の電圧を提供するように構成された駆動回路と、
を有し、
前記第1の画素は、
前記基板上の第1のLEDと、
前記第1のLED上の第1のトンネル接合と、
前記トンネル接合上の第1の半導体層と、
を有し、
前記第1の組のコンタクトの第1コンタクトは、前記第1の半導体層に接続され、前記第1の組のコンタクトの第2コンタクトは、前記第1のLED内の前記第1の半導体層と同じ導電型の半導体層に接続され、
前記第2の画素は、
前記基板上の第1のLEDと、
前記第1のLED上の第1のトンネル接合と、
前記第1のトンネル接合上の第2のLEDと、
前記第2のLED上の第2のトンネル接合と、
前記第2のトンネル接合上の第2の半導体層と、
を有し、
前記第2の組のコンタクトの第3コンタクトは、前記第2の半導体層に接続され、
前記第2の組のコンタクトの第4コンタクトは、前記第2のLED内の前記第2の半導体層と同じ導電型の半導体層に接続され、
前記第1の組のコンタクトの前記第1コンタクトは、前記第1のトレンチを介して前記第2の組のコンタクトの前記第4コンタクトと対面し、該第4コンタクトと同じ高さにあり、
前記第3の画素は、
前記基板上の第1のLEDと、
前記第1のLED上の第1のトンネル接合と、
前記第1のトンネル接合上の第2のLEDと、
前記第2のLEDの第2のトンネル接合と、
前記第2のトンネル接合上の第3のLEDと、
を有し、
前記第3の組のコンタクトの第5コンタクトは、前記第2の半導体層と同じ導電型の半導体層に接続され、
前記第2の組のコンタクトの前記第3コンタクトは、前記第2のトレンチを介して前記第3の組のコンタクトの前記第5コンタクトと対面し、該第5コンタクトと同じ高さにある、システム。 - 前記第1の画素は、第1の波長を有する光を放射するように構成され、
前記第2の画素は、第2の波長を有する光を放射するように構成され、
前記第3の画素は、第3の波長を有する光を放射するように構成される、請求項6に記載のシステム。 - さらに、受信された光をデータ信号に変換するように構成された、VLC受信器を有し、
該VLC受信器は、増幅回路、光フィルタおよび集光器、光ダイオード、ならびにクロックおよびデータ再生(CDR)ユニットを有する、請求項6に記載のシステム。 - 前記光ダイオードは、前記第1の画素、前記第2の画素、および前記第3の画素の1または2以上を有する、請求項8に記載のシステム。
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TWI715902B (zh) | 2021-01-11 |
KR20200098669A (ko) | 2020-08-20 |
CN111788690A (zh) | 2020-10-16 |
US11594572B2 (en) | 2023-02-28 |
KR102459806B1 (ko) | 2022-10-31 |
US11081622B2 (en) | 2021-08-03 |
JP2022121518A (ja) | 2022-08-19 |
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KR20220137797A (ko) | 2022-10-12 |
TW201935719A (zh) | 2019-09-01 |
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EP3729510A1 (en) | 2020-10-28 |
WO2019126728A1 (en) | 2019-06-27 |
US20210327953A1 (en) | 2021-10-21 |
JP2021508175A (ja) | 2021-02-25 |
US20190198709A1 (en) | 2019-06-27 |
US20190198561A1 (en) | 2019-06-27 |
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