WO2022061506A1 - 全彩led外延结构 - Google Patents

全彩led外延结构 Download PDF

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Publication number
WO2022061506A1
WO2022061506A1 PCT/CN2020/116790 CN2020116790W WO2022061506A1 WO 2022061506 A1 WO2022061506 A1 WO 2022061506A1 CN 2020116790 W CN2020116790 W CN 2020116790W WO 2022061506 A1 WO2022061506 A1 WO 2022061506A1
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Prior art keywords
pillars
full
color led
light
epitaxial structure
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PCT/CN2020/116790
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English (en)
French (fr)
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程凯
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苏州晶湛半导体有限公司
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Priority to PCT/CN2020/116790 priority Critical patent/WO2022061506A1/zh
Priority to CN202080103955.3A priority patent/CN116097458A/zh
Priority to TW110134793A priority patent/TWI785807B/zh
Publication of WO2022061506A1 publication Critical patent/WO2022061506A1/zh
Priority to US17/988,956 priority patent/US20230085021A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Definitions

  • the invention relates to the technical field of semiconductors, in particular to a full-color LED epitaxial structure.
  • Light-emitting diodes use the recombination between electrons and holes to radiate visible light.
  • the two main application areas for LEDs include: lighting and displays.
  • future development trends include: higher picture quality and higher definition (more pixels and smaller size pixels).
  • the key technology to realize high-definition display is to realize ultra-small light-emitting pixels, which requires smaller-sized full-color LED light-emitting units.
  • LED has many advantages such as high brightness, low cost, long life, small size, energy saving and environmental protection.
  • white light LEDs are mainly realized in the following ways: The first is to obtain white light by exciting phosphors with ultraviolet LEDs. This method is similar to the principle of fluorescent lamps. Ultraviolet LEDs can generate light with longer wavelengths through organic or inorganic phosphors. , visible light ranging from blue to red light can be obtained, so white light emission can be achieved. The second is achieved by exciting phosphors with blue light. Part of the blue light is transmitted through the phosphor, and the other part is absorbed by the phosphor to emit red and green light. The combination of the three colors can achieve white light emission.
  • the purpose of the present invention is to provide a full-color LED epitaxial structure, which can adjust the composition ratio of the light-emitting layer only by adjusting the area ratio of the pillars on the substrate, so as to adjust the light-emitting wavelength of the LED and reduce the full-color LED. LED manufacturing process.
  • the full-color LED epitaxial structure provided by the present invention includes:
  • the surface of the substrate includes a plurality of periodically arranged unit regions, each of the unit regions includes n sub-unit regions, and n is a positive integer greater than or equal to 2;
  • each of the pillars is correspondingly distributed in each of the subunit regions;
  • a light-emitting layer and a second-type semiconductor layer are sequentially formed on the upper surface of the pillars, the pillars include the first-type semiconductor layer of the opposite conductivity type to the second-type semiconductor layer, and the semiconductor layer of the first type is in contact with the light-emitting layer;
  • At least one of the pillars has an area ratio that is different from the area ratio of the other n-1 pillars, wherein,
  • the area ratio of the pillars is the ratio between the horizontal cross-sectional area of the pillars and the area of the corresponding subunit area.
  • the height of the pillars ranges from 100 nanometers to 400 nanometers.
  • the area ratios of the n pillars corresponding to each of the unit regions are different.
  • the pillar only includes the first type semiconductor layer, and the first type semiconductor layer is located between the light emitting layer and the substrate.
  • the pillars include a buffer layer, a nucleation layer and the first type of semiconductor layer.
  • the substrate is a patterned substrate
  • the pillars include protrusions of the patterned substrate and the semiconductor layer of the first type.
  • the substrate is an N-type semiconductor substrate.
  • the area of the n sub-unit regions of the unit region is the same, and the horizontal cross-sectional area of at least one of the columns in the n columns corresponding to the n sub-unit regions is the same as that of the other columns.
  • the horizontal cross-sectional areas of the n-1 pillars are different.
  • the arrangement of the 2n pillars corresponding to the two adjacent unit areas is mirror-symmetrical.
  • the area of at least one of the sub-unit areas in the n sub-unit areas of the unit area is different from the area of the other n-1 sub-unit areas, and the level of the n pillars is different.
  • the cross-sectional area is the same.
  • the 2n sub-unit areas in the two adjacent unit areas are arranged in a mirror-symmetrical manner.
  • the material of the first type of semiconductor layer is group III nitride, and/or the material of the light-emitting layer is group III nitride, and/or the material of the second type of semiconductor layer is III Group nitrides.
  • the light-emitting layer is doped with In element, and the area ratio of the pillars is adjusted to adjust the composition ratio of the In element in the light-emitting layer grown above the pillars.
  • the area ratio of the patterned pillars corresponding to one unit area of the substrate is different, so that the flow rate of the reactive gas in each opening is different when the light-emitting layer is grown.
  • the area ratio of the pillars decreases, the patterned pillars
  • the growth rate of the light-emitting layer on the upper surface of the object will become faster, and the doping efficiency of each element in the grown light-emitting layer will be different, so that the composition ratio of each element in the grown light-emitting layer will be different, and the light-emitting wavelength of the LED will be different.
  • the above-mentioned process is simple, and a semiconductor structure that can be used for a full-color LED can be fabricated on one substrate, thereby reducing the size of the full-color LED and reducing the cost.
  • FIG. 1 is a schematic top-view structural diagram of a full-color LED epitaxial structure according to a first embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional structural diagram of the full-color LED epitaxial structure according to the first embodiment of the present invention
  • FIG. 3 is a schematic cross-sectional structural diagram of a full-color LED epitaxial structure according to a second embodiment of the present invention.
  • FIG. 4 is a schematic cross-sectional structural diagram of a full-color LED epitaxial structure according to a third embodiment of the present invention.
  • FIG. 5 is a schematic cross-sectional structural diagram of a full-color LED epitaxial structure according to a fourth embodiment of the present invention.
  • FIG. 6 is a schematic top-view structural diagram of a full-color LED epitaxial structure according to a fifth embodiment of the present invention.
  • FIG. 7 is a schematic top-view structural diagram of a full-color LED epitaxial structure according to a sixth embodiment of the present invention.
  • FIG. 8 is a schematic top-view structural diagram of a full-color LED epitaxial structure according to a seventh embodiment of the present invention.
  • the first type semiconductor layer 13 The light-emitting layer 14
  • Second type semiconductor layer 15 Light emitting structure 100
  • the full-color LED epitaxial structure 1 includes a substrate 10 , and the surface of the substrate 10 includes unit area 11, each unit area 11 includes n subunit areas 11a, n is a positive integer greater than or equal to 2;
  • the full-color LED epitaxial structure 1 is used for display, and a plurality of unit areas 11 are arranged in an array, each unit area 11 corresponds to a pixel unit area; each sub-unit area 11a corresponds to a sub-pixel area.
  • the full-color LED epitaxial structure can also be used for illumination.
  • a plurality of unit areas 11 are arranged in an array, each unit area 11 corresponds to a lighting unit area; each subunit area 11a corresponds to a primary color light emitting structure area.
  • n is preferably 3, which corresponds to the formation of an LED light-emitting structure 100 with three primary colors of red, green, and blue.
  • the area S1 of each subunit region 11a is the same size.
  • the shapes of the subunit regions 11a are the same, and they are all rectangular. In other embodiments, the shape of each subunit area 11a may be different, and/or the shape of the subunit area 11a may also be one of a circle, a triangle, a hexagon, and a trapezoid. This embodiment does not limit the distribution, shape and size of each subunit region 11a.
  • n may also be 4, corresponding to forming an LED light-emitting structure with four primary colors of red, green, blue, and yellow.
  • the area ratio of at least one of the pillars 12 is different from the area ratio of the other n ⁇ 1 pillars 12 in the area ratio of the n pillars 12 corresponding to each of the unit regions 11 ,
  • the area ratio of the pillars 12 is the ratio between the horizontal cross-sectional area of the pillars 12 and the corresponding area of the subunit region 11a.
  • the n sub-unit regions 11a of the unit region 11 have the same area, and at least one of the n columns 12 corresponding to the n sub-unit regions 11a has a level of the column 12.
  • the cross-sectional area is different from the horizontal cross-sectional area of the other n-1 columns 12 .
  • the areas S1 of the three subunit regions 11a of each unit region 11 are the same in size, and the horizontal cross-sectional areas S2 of the pillars 12 correspondingly distributed in each subunit region 11a are different from each other.
  • the area ratios of the three pillars 12 corresponding to each of the unit regions 11 are not the same, because the light emitting layers of the subsequent light emitting structures 100 are grown on the upper surfaces of the pillars 12 , so as to realize the respective light emitting structures 100
  • the composition content of the light-emitting layer 14 is different.
  • the height of the pillars 12 ranges from 100 nanometers to 400 nanometers, which can avoid overlapping of the light-emitting layers 14 of the sub-unit regions 11 a of one unit region 11 , thereby avoiding the problem of cross-coloring.
  • the full-color LED epitaxial structure 1 further includes a plurality of pillars 12 , and each of the pillars 12 is correspondingly distributed in each of the In the subunit region 11a; the light emitting layer 14 and the second type semiconductor layer 15 are sequentially formed on the upper surface of the pillar 12, and the pillar 12 contains the opposite conductivity type to the second type semiconductor layer 15 the first type of semiconductor layer 13, and the first type of semiconductor layer 13 and the light-emitting layer 14 are in contact with each other; the pillars 12 only include the first type of semiconductor layer 13, the first type of semiconductor layer 13 A type of semiconductor layer 13 is located between the light-emitting layer 14 and the substrate 10 .
  • FIG. 3 is a schematic cross-sectional structure diagram of the full-color LED epitaxial structure 1 according to the second embodiment of the present invention.
  • the structure of the full-color LED epitaxial structure 1 of the second embodiment is substantially the same as that of the full-color LED epitaxial structure 1 of the first embodiment.
  • the only difference is that the pillars 12 include a buffer layer 121 , a nucleation layer 122 and the first type semiconductor layer 13 .
  • FIG. 4 is a schematic cross-sectional structure diagram of the full-color LED epitaxial structure 1 according to the third embodiment of the present invention.
  • the structure of the full-color LED epitaxial structure 1 of the third embodiment is substantially the same as that of the full-color LED epitaxial structure 1 of the first embodiment.
  • the only difference is that the substrate 10 is a patterned substrate, and the pillars 12 include the protrusions 101 of the patterned substrate 10 and the semiconductor layer 13 of the first type.
  • FIG. 5 is a schematic cross-sectional structure diagram of the full-color LED epitaxial structure 1 according to the fourth embodiment of the present invention.
  • the structure of the full-color LED epitaxial structure 1 of the fourth embodiment is substantially the same as that of the full-color LED epitaxial structure 1 of the second embodiment.
  • the only difference is that the pillars 12 include the bumps 101 of the patterned substrate 10 , the buffer layer 121 , the nucleation layer 122 and the semiconductor layer 13 of the first type.
  • the substrate 10 is an N-type semiconductor substrate.
  • the substrate 10 can conduct electricity, and can subsequently be used as an electrode of a light-emitting LED device without stripping.
  • the substrate 10 may also be a non-conductive substrate, such as a sapphire substrate. In this case, after the preparation of the second type semiconductor, the substrate 10 needs to be peeled off, and then the electrodes of the light-emitting LED device are fabricated.
  • the material of the first type semiconductor layer 13 may be group III nitride, and may specifically include at least one of GaN and AlGaN.
  • a certain material is represented by a chemical element, but the molar ratio of each chemical element in the material is not limited.
  • GaN material contains Ga element and N element, but the molar ratio of Ga element and N element is not limited;
  • AlGaN material contains three elements, Al, Ga, and N, but the molar ratio of each is not limited.
  • the first type may be P-type, and the P-type doping ions may be at least one of Mg ions, Zn ions, Ca ions, Sr ions or Ba ions.
  • P-type doping ions can be achieved by an in-situ doping process.
  • the light emitting layer 14 may include at least one of a single quantum well structure, a multiple quantum well (MQW) structure, a quantum wire structure, and a quantum dot structure.
  • the light emitting layer 14 may include well layers and barrier layers. The forbidden band width of the well layer is smaller than that of the barrier layer.
  • the material of the light-emitting layer 14 may be a GaN-based material, in which In element may be doped, for example, InGaN, or Al element may be doped, for example, AlGaN.
  • the forbidden band width of InN is about 0.7 eV, which is smaller than the forbidden band width of 3.4 eV of GaN. Therefore, the greater the doping amount of In, the longer the emission wavelength of the light-emitting layer 14 is.
  • the forbidden band width of AlN is about 6.2 eV, which is larger than that of GaN, which is 3.4 eV. Therefore, the greater the doping amount of Al, the shorter the emission wavelength of the light-emitting layer 14 .
  • the growth process of the GaN-based material containing In or Al may refer to the growth process of the aforementioned Group III nitride material.
  • the area ratios of the pillars 12 are different. Therefore, when the light-emitting layer 14 is grown on the upper surface of the pillars 12, the flow rates of the reactive gases around the pillars 12 are different, so that the doping rates of In/Al elements and Ga elements are different. That is, the doping efficiency of the In/Al element is different, which makes the composition ratio of the In/Al element in the grown light-emitting layer 14 different.
  • the doping rate of elements therefore, the smaller the area ratio of each pillar 12, the higher the composition content of In element in the light-emitting layer 14InGaN, in addition, the smaller the area ratio of the pillar 12, the quantum well in the light-emitting layer 14.
  • the thickness will also increase, because of the quantum Stark effect, the wavelength of light will increase.
  • the doping rate of Al element is smaller than the doping rate of Ga element, therefore, the smaller the area ratio of the pillars 12, the lower the composition content of Al element in the light-emitting layer 14AlGaN Therefore, the smaller the doping amount of Al is, the longer the emission wavelength of the light-emitting layer 14 is.
  • the larger the area ratio of the pillars 12, the smaller the thickness of the grown light-emitting layer 14; the smaller the area ratio of the pillars 12, the larger the thickness of the grown light-emitting layer 14, and the thickness of the quantum wells will follow Increase, because of the quantum Stark effect, the wavelength of light will increase accordingly.
  • the light-emitting layer 14 is doped with In element, and the area ratio of the pillars 12 is adjusted to adjust the composition ratio of the In element in the light-emitting layer 14 grown above the pillars 12 .
  • the material of the second type semiconductor layer 15 may be group III nitride, and may specifically include at least one of GaN and AlGaN.
  • the second type may be an N-type, and the N-type doping ions may be at least one of Si ions, Ge ions, Sn ions, Se ions or Te ions.
  • the growth process of the N-type Group III nitride material may refer to the aforementioned growth process of the P-type Group III nitride material.
  • the first-type semiconductor layer 13 may be an N-type semiconductor layer
  • the second-type semiconductor layer 15 may be a P-type semiconductor layer.
  • the first type semiconductor layer 13, the light emitting layer 14 and the second type semiconductor layer 15 of each subunit region 11a form an LED structure.
  • the LED structure of each cell region 11 forms an LED cell.
  • the first type of semiconductor layer 13 and the second type of semiconductor layer 15 are respectively applied with voltages to provide holes and electrons, the higher the composition ratio of In element in the light-emitting layer 14, the longer the emission wavelength; The lower the composition ratio, the shorter the emission wavelength; the higher the composition ratio of Al element, the shorter the emission wavelength; the lower the composition ratio of Al element, the longer the emission wavelength.
  • the first electrode and the second electrode can also be continuously fabricated to form the LED device; wherein, the first electrode electrically leads out the first type semiconductor layer 13, and the second electrode electrically leads out the second type semiconductor layer 15 .
  • FIG. 6 is a schematic top-view structural diagram of the full-color LED epitaxial structure 1 according to the fifth embodiment of the present invention, the structure of the full-color LED epitaxial structure 1 according to the fifth embodiment of the present invention, the first embodiment, the second embodiment, the third embodiment and the third embodiment
  • the structures of 4 are substantially the same, and the only difference is that the arrangement of the 2n pillars 12 of the two adjacent unit regions 11 is mirror-symmetrical.
  • the advantage of the mirror-symmetric arrangement of this embodiment is that the columns 12 with close area ratios are close to each other, which can stabilize the flow rate of the reaction gas, so that In/ The doping efficiency of the Al element is stable, and the composition ratio of the In/Al element in the grown light-emitting layer 14 is stable.
  • FIG. 7 is a schematic top view of the full-color LED epitaxial structure 1 according to the sixth embodiment of the present invention, the structure of the full-color LED epitaxial structure 1 according to the fifth embodiment of the present invention and the first, second, third, and embodiments
  • the structure of 4 is basically the same, the only difference is that in one unit area 11, the area S1 of each subunit area 11a is different, and the horizontal cross-sectional area S2 of the pillars 12 correspondingly distributed in each subunit area 11a is the same size. Therefore, the area ratio of the pillars 12 is different, the composition ratio of the In/Al element in the light-emitting layer 14 is different, and the light-emitting wavelength is different.
  • At least one of the sub-unit regions 11 a in the n sub-unit regions 11 a of the unit region 11 has an area different from that of the other n ⁇ 1 sub-unit regions 11 a , and the n sub-unit regions 11 a have different areas.
  • the horizontal cross-sectional areas of the pillars 12 are the same.
  • FIG. 8 is a schematic top view of the full-color LED epitaxial structure 1 according to the seventh embodiment of the present invention.
  • the structure of the full-color LED epitaxial structure 1 according to the seventh embodiment of the present invention is substantially the same as that of the sixth embodiment, and the only difference is that the adjacent The arrangement of the 2n columns 12 in the two unit regions 11 is mirror-symmetrical.
  • the advantage of the mirror-symmetrical arrangement of the present embodiment is that the columns 12 with close area ratios are adjacent to each other, which can stabilize the flow rate of the reaction gas, so that In/ The doping efficiency of the Al element is stable, and the composition ratio of the In/Al element in the grown light-emitting layer 14 is stable.
  • all the pillars 12 have the same shape and are all rectangular.
  • the shapes of the pillars 12 may be different, and/or the shapes of the pillars 12 may also be one of a circle, a triangle, a hexagon, and a trapezoid.

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Abstract

本发明提供了一种全彩LED外延结构，利用对应于衬底的一个单元区的各柱状物面积占比大小不同，从而生长发光层时各柱状物周围的反应气体的流速不同，生长的发光层中各元素的掺入效率不同，进而使得生长的发光层中各元素的组分占比不同，LED的发光波长不同。上述工艺简单，能在一个衬底上制作可用于全彩LED的半导体结构，仅通过调整柱状物的面积占比，来调整发光层的组分占比，从而调整LED的发光波长，减小了全彩LED的制备工序。

Description

全彩LED外延结构 技术领域
本发明涉及半导体技术领域，尤其涉及一种全彩LED外延结构。
背景技术
发光二极管，简称LED，是利用电子与空穴之间的复合辐射出可见光。LED的两个主要应用领域包括：照明与显示。尤其在显示领域，未来发展趋势包括：更高画质和更高清(更多数量的像素和更小尺寸的像素)。实现高清显示的关键技术是实现超小发光像素，需要更小尺寸的全彩LED发光单元。
]LED作为新一代照明设备，具有亮度高、成本低、寿命长、体积小、节能环保等诸多优点。目前，白光LED主要通过以下方式实现：第一种是通过紫外LED激发荧光粉的方式获得白光，这种方式与荧光灯的原理相似，紫外LED可通过有机或无机荧光粉来产生波长较长的光，可得到从蓝光到红光范围的可见光，因而可实现白光发射。第二种是通过蓝光激发荧光粉的方式实现。一部分蓝光通过荧光粉传输出来，另一部分则被荧光粉吸收后发红光和绿光，三种颜色的光组合即可实现白光发射。紫光、紫外光或蓝光激发荧光粉时，光被相应的荧光粉吸收，通过下转换的方式发出波长较长的光，通过斯托克斯位移可知这种转换效率较低；而且荧光粉会随使用时间得延长出现光衰现象。因此如何充分利用图形化衬底，研发一种制备成本低、显色性好、无荧光粉的全彩LED外延结构对本行业进一步的发展具有重大意义。
发明内容
本发明的发明目的是提供一种全彩LED外延结构，仅通过调整衬底上柱状物的面积占比，来调整发光层的组分占比，从而调整LED的发光波长，减 小了全彩LED的制备工序。
为实现上述目的，本发明提供的的全彩LED外延结构，包括：
衬底，所述衬底的表面包括若干周期排列的单元区，每一所述单元区包括n个子单元区，n为大于等于2的正整数；
多个柱状物，每一所述柱状物对应分布于所述每一所述子单元区中；
依次形成在所述柱状物上表面的发光层以及第二类型的半导体层，所述柱状物中包含与所述第二类型的半导体层导电类型相反的所述第一类型的半导体层，且所述第一类型的半导体层与所述发光层相互接触；
其中，每一所述单元区对应的n个所述柱状物的面积占比中至少存在一个所述柱状物的面积占比与其他n-1个所述柱状物的面积占比不同，其中，所述柱状物的面积占比为所述柱状物的水平横截面积与之对应的所述子单元区的面积之间的比值。
可选的，所述柱状物的高度范围为100纳米至400纳米。
可选的，每一所述单元区对应的n个所述柱状物的面积占比均不相同。
可选的，所述柱状物仅包含所述第一类型的半导体层，所述第一类型的半导体层位于所述发光层与所述衬底之间。
可选的，所述柱状物包含缓冲层、成核层以及所述第一类型的半导体层。
可选的，所述衬底为图形化衬底，所述柱状物包含所述图形化衬底的凸起以及所述第一类型的半导体层。
可选的，所述衬底为N型半导体衬底。
可选的，所述单元区的n个所述子单元区的面积相同，n个所述子单元区对应的n个所述柱状物中至少存在一个所述柱状物的水平横截面积与其他n-1个所述柱状物的水平横截面积不同。
可选的，相邻的两个所述单元区对应的2n个所述柱状物的排布方式呈镜面对称。
可选的，所述单元区的n个所述子单元区中至少存在一个所述子单元区的面积与其他n-1个所述子单元区的面积不同，n个所述柱状物的水平横截面积相同。
可选的，相邻的两个所述单元区中的2n个所述子单元区的排布方式呈镜面对称。
可选的，所述第一类型的半导体层的材料为Ⅲ族氮化物、和/或所述发光层的材料为Ⅲ族氮化物、和/或所述第二类型的半导体层的材料为Ⅲ族氮化物。
可选的，所述发光层中掺杂In元素，调整所述柱状物的面积占比以调整所述柱状物上方生长的所述发光层中In元素的组分占比。
与现有技术相比，本发明的有益效果在于：
利用对应于衬底的一个单元区的图案化的柱状物面积占比大小不同，从而生长发光层时各开口内的反应气体的流速不同，当柱状物的面积占比减小时，图案化的柱状物的上表面的发光层的生长速度会变快，生长的发光层中各元素的掺入效率不同，进而使得生长的发光层中各元素的组分占比不同，LED的发光波长不同。上述工艺简单，且能在一个衬底上制作可用于全彩LED的半导体结构，减小了全彩LED的尺寸，降低了成本。
附图说明
图1是本发明第一实施例的全彩LED外延结构的俯视结构示意图；
图2为本发明第一实施例的全彩LED外延结构的截面结构示意图；
图3为本发明第二实施例的全彩LED外延结构的截面结构示意图；
图4为本发明第三实施例的全彩LED外延结构的截面结构示意图；
图5为本发明第四实施例的全彩LED外延结构的截面结构示意图；
图6为本发明第五实施例的全彩LED外延结构的俯视结构示意图；
图7为本发明第六实施例的全彩LED外延结构的俯视结构示意图；
图8为本发明第七实施例的全彩LED外延结构的俯视结构示意图。
为方便理解本发明，以下列出本发明中出现的所有附图标记：
衬底10                     单元区11
子单元区11a                柱状物12
成核层121                  缓冲层122
柱状物的水平横截面积S2     子单元区的面积S1
第一类型的半导体层13       发光层14
第二类型的半导体层15       发光结构100
具体实施方式
为使本发明的上述目的、特征和优点能够更为明显易懂，下面结合附图对本发明的具体实施例做详细的说明。
图1是本发明第一实施例的全彩LED外延结构1的俯视结构示意图，如图1所示，全彩LED外延结构1包括衬底10，所述衬底10的表面包括若干周期排列的单元区11，每一所述单元区11包括n个子单元区11a，n为大于等于2的正整数；
本实施例中，全彩LED外延结构1用于显示，若干单元区11呈阵列式排布，每一单元区11对应于一像素单元区；每一子单元区11a对应于一子像素区。
其它实施例中，全彩LED外延结构也可以用于照明。若干单元区11呈阵列式排布，每一单元区11对应于一照明单元区；每一子单元区11a对应于一基色发光结构区。
如图1所示的实施例中，n优选为3，对应形成红、绿、蓝三基色的LED发光结构100。图1所示的第一实施例中，每一子单元区11a的面积S1大小相同。
本实施例中，各个子单元区11a的形状都相同，且都为矩形。其它实施例中，各个子单元区11a的形状可以不同，和/或子单元区11a的形状还可以为圆形、三角形、六边形以及梯形中的一种。本实施例对各子单元区11a的分布、形状以及面积大小都不加以限定。
一些实施例中，n也可以为4，对应形成红、绿、蓝、黄四基色的LED发光结构。
每一所述单元区11对应的n个所述柱状物12的面积占比中至少存在一个所述柱状物12的面积占比与其他n-1个所述柱状物12的面积占比不同，其中，所述柱状物12的面积占比为所述柱状物12的水平横截面积与之对应的所述子单元区11a的面积之间的比值。
在一实施例中，单元区11的n个所述子单元区11a的面积相同，n个所述子单元区11a对应的n个所述柱状物12中至少存在一个所述柱状物12的水平横截面积与其他n-1个所述柱状物12的水平横截面积不同。
在第一实施例中，如图1所示，每一单元区11的三个子单元区11a的面积S1大小相同，而各子单元区11a内对应分布的柱状物12的水平横截面积S2各 不相同，每一所述单元区11对应的3个所述柱状物12的面积占比均不相同，因为后续发光结构100的发光层生在在柱状物12上表面，从而实现各发光结构100的发光层14的组分含量不同。
具体的，所述柱状物12的高度范围为100纳米至400纳米，可避免一个单元区11的各子单元区11a的发光层14交叠，进而避免串色问题。
图2为本发明第一实施例的全彩LED外延结构1的截面结构示意图，全彩LED外延结构1还包括多个柱状物12，每一所述柱状物12对应分布于所述每一所述子单元区11a中；依次形成在所述柱状物12上表面的发光层14以及第二类型的半导体层15，所述柱状物12中包含与所述第二类型的半导体层15导电类型相反的所述第一类型的半导体层13，且所述第一类型的半导体层13与所述发光层14相互接触；所述柱状物12仅包含所述第一类型的半导体层13，所述第一类型的半导体层13位于所述发光层14与所述衬底10之间。
图3为本发明第二实施例的全彩LED外延结构1的截面结构示意图，本实施例二的全彩LED外延结构1的结构与实施例一的全彩LED外延结构1的结构大致相同，区别仅在于：所述柱状物12包含缓冲层121、成核层122以及所述第一类型的半导体层13。
图4为本发明第三实施例的全彩LED外延结构1的截面结构示意图，本实施例三的全彩LED外延结构1的结构与实施例一的全彩LED外延结构1的结构大致相同，区别仅在于：所述衬底10为图形化衬底，所述柱状物12包含所述图形化衬底10的凸起101以及所述第一类型的半导体层13。
图5为本发明第四实施例的全彩LED外延结构1的截面结构示意图，本实施例四的全彩LED外延结构1的结构与实施例二的全彩LED外延结构1的结构大致相同，区别仅在于：柱状物12包含图形化衬底10的凸起101、缓冲层121、成核层122以及所述第一类型的半导体层13。
在一实施例中，衬底10为N型半导体衬底，此时，衬底10可以导电，后续可以作为发光LED器件的电极，无需剥离。
衬底10也可为不导电的衬底，例如蓝宝石衬底，此时，在第二类型半导体制备完成后，需要将衬底10剥离之后，在进行发光LED器件电极的制作。
第一类型的半导体层13的材料可以为Ⅲ族氮化物，具体可以包括GaN、AlGaN 中的至少一种。
需要说明的是，本实施例中，以化学元素代表某种材料，但不限定该材料中各化学元素的摩尔占比。例如GaN材料中，包含Ga元素与N元素，但不限定Ga元素与N元素的摩尔占比；AlGaN材料中，包含Al、Ga、N三种元素，但不限定各自的摩尔占比大小。
第一类型可以为P型，P型掺杂离子可以为Mg离子、Zn离子、Ca离子、Sr离子或Ba离子中的至少一种。
P型掺杂离子可以通过原位掺杂(in-situ)工艺实现。
发光层14可以包括单量子阱结构、多量子阱(MQW)结构、量子线结构和量子点结构中的至少一种。发光层14可以包括阱层和势垒层。阱层的禁带宽度小于势垒层的禁带宽度。
发光层14的材料可以为GaN基材料，其中可以掺杂In元素，具体例如为InGaN，也可以掺杂Al元素，具体例如为AlGaN。InN的禁带宽度大约为0.7eV，小于GaN的禁带宽度3.4eV，因而In的掺入量越大，发光层14的发光波长越长。AlN的禁带宽度大约为6.2eV，大于GaN的禁带宽度3.4eV，因而Al的掺入量越大，发光层14的发光波长越短。
含In或Al的GaN基材料的生长工艺可参照前述Ⅲ族氮化物材料的生长工艺。
柱状物12的面积占比大小不同，因此在柱状物12的上表面生长发光层14时，各柱状物12周围的反应气体的流速不同，从而In/Al元素与Ga元素的掺入速率不同，即In/Al元素的掺入效率不同，这使得生长的发光层14中In/Al元素的组分占比不同。具体地，各柱状物12的面积占比越小，发光层14的基础材料GaN的生长速度会变快，而In元素的掺杂具有更好的选择性，In元素的掺入速率越大于Ga元素的掺入速率，因此，各柱状物12的面积占比越小，发光层14InGaN中In元素的组分含量越高，另外，柱状物12的面积占比越小，发光层14内量子阱的厚度也会随之增加，因为量子斯塔克效应，发光的波长会随之增加。反之，柱状物12的面积占比越大，In元素的掺入速率与Ga元素的掺入速率差异越不明显，即In元素的掺入效率越低，生长的发光层14中In元素的组分占比越低。在另一实施例中，发光层14的基础材料GaN中的掺杂Al元素，柱状物12的面积占比越小，柱状物12上表面的发光层14的基础材料GaN的生长 速度会变快，而Al元素的生长没有选择性，Al元素的掺入速率越小于Ga元素的掺入速率，因此，柱状物12的面积占比越小，发光层14AlGaN中Al元素的组分含量越低，因而Al的掺入量越小，发光层14的发光波长越长。
此外，柱状物12的面积占比越大，生长的发光层14的厚度越小；柱状物12的面积占比越小，生长的发光层14的厚度越大，量子阱的厚度也会随之增加，因为量子斯塔克效应，发光的波长都会随之增加。
本实施例中，发光层14中掺杂In元素，调整所述柱状物12的面积占比以调整所述柱状物12上方生长的所述发光层14中In元素的组分占比。
第二类型的半导体层15的材料可以为Ⅲ族氮化物，具体可以包括GaN、AlGaN中的至少一种。
第二类型可以为N型，N型掺杂离子可以为Si离子、Ge离子、Sn离子、Se离子或Te离子中的至少一种。
N型的Ⅲ族氮化物材料的生长工艺可参照前述P型Ⅲ族氮化物材料的生长工艺。
一些实施例中，第一类型的半导体层13可以为N型半导体层，第二类型的半导体层15可以为P型半导体层。
每一子单元区11a的第一类型的半导体层13、发光层14以及第二类型的半导体层15形成了一LED结构。每一单元区11的LED结构形成一LED单元。
第一类型的半导体层13与第二类型的半导体层15分别被施加电压，提供空穴与电子时，发光层14中In元素的组分占比越高，发光波长越长；In元素的组分占比越低，发光波长越短；Al元素的组分占比越高，发光波长越短；Al元素的组分占比越低，发光波长越长。
后续工艺中，还可以继续制作第一电极与第二电极，以形成LED器件；其中，第一电极将第一类型的半导体层13电引出，第二电极将第二类型的半导体层15电引出。
图6为本发明第五实施例的全彩LED外延结构1的俯视结构示意图，本发明实施例五的全彩LED外延结构1的结构与实施例一、实施例二、实施例三以及实施例四的结构大致相同，区别仅在于：相邻的两个单元区11的2n个柱状物12的排布方 式呈镜面对称。
相对于图1中的2n个子单元区11a的排布方式，本实施例的镜面对称排布方式的好处在于：面积占比接近的柱状物12相互临近，可稳定反应气体的流速，使得In/Al元素的掺入效率稳定，生长的发光层14中In/Al元素的组分占比稳定。
图7是本发明第六实施例的全彩LED外延结构1的俯视结构示意图，本发明实施例五的全彩LED外延结构1的结构与实施例一、实施例二、实施例三以及实施例四的结构大致相同，区别仅在于：一个单元区11中，各个子单元区11a的面积S1大小不同，而各个子单元区11a内对应分布的柱状物12的水平横截面积S2大小相同。从而实现柱状物12的面积占比不同，发光层14中In/Al元素的组分占比不同，发光波长不同。
在一实施例中，单元区11的n个所述子单元区11a中至少存在一个所述子单元区11a的面积与其他n-1个所述子单元区11a的面积不同，n个所述柱状物12的水平横截面积相同。
图8为本发明第七实施例的全彩LED外延结构1的俯视结构示意图，本发明实施例七的全彩LED外延结构1的结构与实施例六的结构大致相同，区别仅在于：相邻的两个单元区11的2n个柱状物12的排布方式呈镜面对称。
相对于图7中的2n个子单元区11a的排布方式，本实施例的镜面对称排布方式的好处在于：面积占比接近的柱状物12相互临近，可稳定反应气体的流速，使得In/Al元素的掺入效率稳定，生长的发光层14中In/Al元素的组分占比稳定。
在一实施例中，各个柱状物12的形状都相同，且都为矩形。其它实施例中，各个柱状物12的形状可以不同，和/或各个柱状物12的形状还可以为圆形、三角形、六边形以及梯形中的一种。
虽然本发明披露如上，但本发明并非限定于此。任何本领域技术人员，在不脱离本发明的精神和范围内，均可作各种更动与修改，因此本发明的保护范围应当以权利要求所限定的范围为准。

Claims (13)

  1. 一种全彩LED外延结构，其特征在于，包括：
    衬底(10)，所述衬底(10)的表面包括若干周期排列的单元区(11)，每一所述单元区(11)包括n个子单元区(11a)，n为大于等于2的正整数；
    多个柱状物(12)，每一所述柱状物(12)对应分布于所述每一所述子单元区(11a)中；
    依次形成在所述柱状物(12)上表面的发光层(14)以及第二类型的半导体层(15)，所述柱状物(12)中包含与所述第二类型的半导体层(15)导电类型相反的所述第一类型的半导体层(13)，且所述第一类型的半导体层(13)与所述发光层(14)相互接触；
    其中，每一所述单元区(11)对应的n个所述柱状物(12)的面积占比中至少存在一个所述柱状物(12)的面积占比与其他n-1个所述柱状物(12)的面积占比不同，其中，所述柱状物(12)的面积占比为所述柱状物(12)的水平横截面积与之对应的所述子单元区(11a)的面积之间的比值。
  2. 根据权利要求1所述的全彩LED外延结构，其特征在于，所述柱状物(12)的高度范围为100纳米至400纳米。
  3. 根据权利要求1所述的全彩LED外延结构，其特征在于，每一所述单元区(11)对应的n个所述柱状物(12)的面积占比均不相同。
  4. 根据权利要求1所述的全彩LED外延结构，其特征在于，所述柱状物(12)仅包含所述第一类型的半导体层(13)，所述第一类型的半导体层(13)位于所述发光层(14)与所述衬底(10)之间。
  5. 根据权利要求1所述的全彩LED外延结构，其特征在于，所述柱状物(12)包含缓冲层(121)、成核层(122)以及所述第一类型的半导体层(13)。
  6. 根据权利要求1所述的全彩LED外延结构，其特征在于，所述衬底(10)为图形化衬底，所述柱状物(12)包含所述图形化衬底(10)的凸起(101)以及所述第一类型的半导体层(13)。
  7. 根据权利要求1所述的全彩LED外延结构，其特征在于，所述衬底(10)为N型半导体衬底。
  8. 根据权利要求1所述的全彩LED外延结构，其特征在于，所述单元 区(11)的n个所述子单元区(11a)的面积相同，n个所述子单元区(11a)对应的n个所述柱状物(12)中至少存在一个所述柱状物(12)的水平横截面积与其他n-1个所述柱状物(12)的水平横截面积不同。
  9. 根据权利要求7所述的全彩LED外延结构，其特征在于，相邻的两个所述单元区(11)对应的2n个所述柱状物(12)的排布方式呈镜面对称。
  10. 根据权利要求1所述的全彩LED外延结构，其特征在于，所述单元区(11)的n个所述子单元区(11a)中至少存在一个所述子单元区(11a)的面积与其他n-1个所述子单元区(11a)的面积不同，n个所述柱状物(12)的水平横截面积相同。
  11. 根据权利要求9所述的全彩LED外延结构，其特征在于，相邻的两个所述单元区(11)中的2n个所述子单元区(11a)的排布方式呈镜面对称。
  12. 根据权利要求1所述的全彩LED外延结构，其特征在于，所述第一类型的半导体层(13)的材料为Ⅲ族氮化物、和/或所述发光层(14)的材料为Ⅲ族氮化物、和/或所述第二类型的半导体层(15)的材料为Ⅲ族氮化物。
  13. 根据权利要求1所述的全彩LED外延结构，其特征在于，所述发光层(14)中掺杂In元素，调整所述柱状物(12)的面积占比以调整所述柱状物(12)上方生长的所述发光层(14)中In元素的组分占比。
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6366025B1 (en) * 1999-02-26 2002-04-02 Sanyo Electric Co., Ltd. Electroluminescence display apparatus
CN104064582A (zh) * 2013-03-19 2014-09-24 三星显示有限公司 有机发光二极管显示器
CN106486587A (zh) * 2015-08-26 2017-03-08 三星电子株式会社 发光二极管、发光二极管封装件和包括其的设备
US20190013366A1 (en) * 2013-11-27 2019-01-10 The Regents Of The University Of Michigan Devices combining thin film inorganic leds with organic leds and fabrication thereof
US20190115390A1 (en) * 2017-03-08 2019-04-18 PlayNitride Inc. Method of manufacturing display device
CN110678985A (zh) * 2018-01-03 2020-01-10 首尔伟傲世有限公司 用于显示器的堆叠和具有其的显示设备

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10804429B2 (en) * 2017-12-22 2020-10-13 Lumileds Llc III-nitride multi-wavelength LED for visible light communication

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6366025B1 (en) * 1999-02-26 2002-04-02 Sanyo Electric Co., Ltd. Electroluminescence display apparatus
CN104064582A (zh) * 2013-03-19 2014-09-24 三星显示有限公司 有机发光二极管显示器
US20190013366A1 (en) * 2013-11-27 2019-01-10 The Regents Of The University Of Michigan Devices combining thin film inorganic leds with organic leds and fabrication thereof
CN106486587A (zh) * 2015-08-26 2017-03-08 三星电子株式会社 发光二极管、发光二极管封装件和包括其的设备
US20190115390A1 (en) * 2017-03-08 2019-04-18 PlayNitride Inc. Method of manufacturing display device
CN110678985A (zh) * 2018-01-03 2020-01-10 首尔伟傲世有限公司 用于显示器的堆叠和具有其的显示设备

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