JP7139528B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP7139528B2
JP7139528B2 JP2021529437A JP2021529437A JP7139528B2 JP 7139528 B2 JP7139528 B2 JP 7139528B2 JP 2021529437 A JP2021529437 A JP 2021529437A JP 2021529437 A JP2021529437 A JP 2021529437A JP 7139528 B2 JP7139528 B2 JP 7139528B2
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Japan
Prior art keywords
plasma processing
microwave
processing apparatus
ring resonator
plasma
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JP2021529437A
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English (en)
Japanese (ja)
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JPWO2021220551A1 (https=
Inventor
仁 田村
紀彦 池田
チェンピン スー
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Hitachi High Tech Corp
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Hitachi High Tech Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H01J37/32256—Tuning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2021529437A 2020-04-27 2020-12-24 プラズマ処理装置 Active JP7139528B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPPCT/JP2020/017927 2020-04-27
PCT/JP2020/017927 WO2021220329A1 (ja) 2020-04-27 2020-04-27 プラズマ処理装置
PCT/JP2020/048422 WO2021220551A1 (ja) 2020-04-27 2020-12-24 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPWO2021220551A1 JPWO2021220551A1 (https=) 2021-11-04
JP7139528B2 true JP7139528B2 (ja) 2022-09-20

Family

ID=78331846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021529437A Active JP7139528B2 (ja) 2020-04-27 2020-12-24 プラズマ処理装置

Country Status (6)

Country Link
US (1) US20230352274A1 (https=)
JP (1) JP7139528B2 (https=)
KR (1) KR102749255B1 (https=)
CN (1) CN113874978B (https=)
TW (1) TWI800798B (https=)
WO (2) WO2021220329A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024084762A1 (ja) * 2022-10-19 2024-04-25 株式会社日立ハイテク プラズマ処理装置
WO2025013645A1 (ja) * 2023-07-11 2025-01-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

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* Cited by examiner, † Cited by third party
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JP7736413B2 (ja) * 2021-12-02 2025-09-09 東京エレクトロン株式会社 プラズマ処理装置及びマイクロ波放射源
JP7762593B2 (ja) * 2022-02-16 2025-10-30 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
KR102864349B1 (ko) * 2022-06-21 2025-09-24 주식회사 히타치하이테크 플라스마 처리 장치 및 가열 장치
JP2024101724A (ja) * 2023-01-18 2024-07-30 東京エレクトロン株式会社 プラズマ処理装置
US20240242936A1 (en) 2023-01-18 2024-07-18 Tokyo Electron Limited Plasma processing apparatus
KR102838566B1 (ko) * 2023-04-05 2025-07-24 세메스 주식회사 마이크로파 안테나, 이를 포함하는 전력 공급 장치 및 기판 처리 장치
TW202514705A (zh) 2023-05-30 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於將能量提供至具有多個功率信號輸入之電漿腔室的系統以及半導體處理系統
CN116390320A (zh) * 2023-05-30 2023-07-04 安徽农业大学 一种电子回旋共振放电装置及应用
CN119732180A (zh) * 2023-07-27 2025-03-28 株式会社日立高新技术 等离子处理装置以及等离子处理方法
WO2026028241A1 (ja) * 2024-07-29 2026-02-05 株式会社日立ハイテク プラズマ処理装置
KR102909817B1 (ko) 2024-09-23 2026-01-07 세메스 주식회사 마이크로파 안테나, 마이크로파 생성 장치, 및 가열 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007035412A (ja) 2005-07-26 2007-02-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2012044035A (ja) 2010-08-20 2012-03-01 Hitachi High-Technologies Corp 半導体製造装置
JP2012049353A (ja) 2010-08-27 2012-03-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2012190899A (ja) 2011-03-09 2012-10-04 Hitachi High-Technologies Corp プラズマ処理装置

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CN1293789C (zh) * 2001-01-18 2007-01-03 东京毅力科创株式会社 等离子体装置及等离子体生成方法
JP3625197B2 (ja) * 2001-01-18 2005-03-02 東京エレクトロン株式会社 プラズマ装置およびプラズマ生成方法
CN100573827C (zh) * 2001-09-27 2009-12-23 东京毅力科创株式会社 电磁场供给装置及等离子体处理装置
JP4209612B2 (ja) 2001-12-19 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置
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JP2005019346A (ja) * 2003-06-30 2005-01-20 Tokyo Electron Ltd プラズマ処理装置、これに用いるプラズマ放射アンテナ及び導波管
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Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2007035412A (ja) 2005-07-26 2007-02-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2012044035A (ja) 2010-08-20 2012-03-01 Hitachi High-Technologies Corp 半導体製造装置
JP2012049353A (ja) 2010-08-27 2012-03-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2012190899A (ja) 2011-03-09 2012-10-04 Hitachi High-Technologies Corp プラズマ処理装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024084762A1 (ja) * 2022-10-19 2024-04-25 株式会社日立ハイテク プラズマ処理装置
JPWO2024084762A1 (https=) * 2022-10-19 2024-04-25
JP7637315B2 (ja) 2022-10-19 2025-02-27 株式会社日立ハイテク プラズマ処理装置
US12444575B2 (en) 2022-10-19 2025-10-14 Hitachi High-Tech Corporation Plasma processing apparatus
WO2025013645A1 (ja) * 2023-07-11 2025-01-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
JPWO2021220551A1 (https=) 2021-11-04
KR102749255B1 (ko) 2025-01-03
KR20210134602A (ko) 2021-11-10
TW202141562A (zh) 2021-11-01
CN113874978B (zh) 2025-03-18
CN113874978A (zh) 2021-12-31
US20230352274A1 (en) 2023-11-02
WO2021220329A1 (ja) 2021-11-04
WO2021220551A1 (ja) 2021-11-04
TWI800798B (zh) 2023-05-01

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