CN113874978B - 等离子处理装置 - Google Patents

等离子处理装置 Download PDF

Info

Publication number
CN113874978B
CN113874978B CN202080006797.XA CN202080006797A CN113874978B CN 113874978 B CN113874978 B CN 113874978B CN 202080006797 A CN202080006797 A CN 202080006797A CN 113874978 B CN113874978 B CN 113874978B
Authority
CN
China
Prior art keywords
ring resonator
plasma processing
microwave
plasma
processing device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080006797.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN113874978A (zh
Inventor
田村仁
池田纪彦
许振斌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Publication of CN113874978A publication Critical patent/CN113874978A/zh
Application granted granted Critical
Publication of CN113874978B publication Critical patent/CN113874978B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H01J37/32256—Tuning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
CN202080006797.XA 2020-04-27 2020-12-24 等离子处理装置 Active CN113874978B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPPCT/JP2020/017927 2020-04-27
PCT/JP2020/017927 WO2021220329A1 (ja) 2020-04-27 2020-04-27 プラズマ処理装置
PCT/JP2020/048422 WO2021220551A1 (ja) 2020-04-27 2020-12-24 プラズマ処理装置

Publications (2)

Publication Number Publication Date
CN113874978A CN113874978A (zh) 2021-12-31
CN113874978B true CN113874978B (zh) 2025-03-18

Family

ID=78331846

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080006797.XA Active CN113874978B (zh) 2020-04-27 2020-12-24 等离子处理装置

Country Status (6)

Country Link
US (1) US20230352274A1 (https=)
JP (1) JP7139528B2 (https=)
KR (1) KR102749255B1 (https=)
CN (1) CN113874978B (https=)
TW (1) TWI800798B (https=)
WO (2) WO2021220329A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7736413B2 (ja) * 2021-12-02 2025-09-09 東京エレクトロン株式会社 プラズマ処理装置及びマイクロ波放射源
JP7762593B2 (ja) * 2022-02-16 2025-10-30 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
KR102864349B1 (ko) * 2022-06-21 2025-09-24 주식회사 히타치하이테크 플라스마 처리 장치 및 가열 장치
TWI899592B (zh) 2022-10-19 2025-10-01 日商日立全球先端科技股份有限公司 電漿處理裝置
JP2024101724A (ja) * 2023-01-18 2024-07-30 東京エレクトロン株式会社 プラズマ処理装置
US20240242936A1 (en) 2023-01-18 2024-07-18 Tokyo Electron Limited Plasma processing apparatus
KR102838566B1 (ko) * 2023-04-05 2025-07-24 세메스 주식회사 마이크로파 안테나, 이를 포함하는 전력 공급 장치 및 기판 처리 장치
TW202514705A (zh) 2023-05-30 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於將能量提供至具有多個功率信號輸入之電漿腔室的系統以及半導體處理系統
CN116390320A (zh) * 2023-05-30 2023-07-04 安徽农业大学 一种电子回旋共振放电装置及应用
JP2025011417A (ja) * 2023-07-11 2025-01-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN119732180A (zh) * 2023-07-27 2025-03-28 株式会社日立高新技术 等离子处理装置以及等离子处理方法
WO2026028241A1 (ja) * 2024-07-29 2026-02-05 株式会社日立ハイテク プラズマ処理装置
KR102909817B1 (ko) 2024-09-23 2026-01-07 세메스 주식회사 마이크로파 안테나, 마이크로파 생성 장치, 및 가열 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1550035A (zh) * 2001-09-27 2004-11-24 ���������ƴ���ʽ���� 电磁场供给装置及等离子体处理装置
JP2007035412A (ja) * 2005-07-26 2007-02-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2012044035A (ja) * 2010-08-20 2012-03-01 Hitachi High-Technologies Corp 半導体製造装置
JP2012049353A (ja) * 2010-08-27 2012-03-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2012190899A (ja) * 2011-03-09 2012-10-04 Hitachi High-Technologies Corp プラズマ処理装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2716221A (en) * 1950-09-25 1955-08-23 Philip J Allen Rotatable dielectric slab phase-shifter for waveguide
EP0502269A1 (en) * 1991-03-06 1992-09-09 Hitachi, Ltd. Method of and system for microwave plasma treatments
US5230740A (en) * 1991-12-17 1993-07-27 Crystallume Apparatus for controlling plasma size and position in plasma-activated chemical vapor deposition processes comprising rotating dielectric
EP0743671A3 (en) * 1995-05-19 1997-07-16 Hitachi Ltd Method and device for a plasma processing device
KR970071945A (ko) * 1996-02-20 1997-11-07 가나이 쯔도무 플라즈마처리방법 및 장치
JPH1083896A (ja) * 1996-09-06 1998-03-31 Hitachi Ltd プラズマ処理装置
US6652709B1 (en) * 1999-11-02 2003-11-25 Canon Kabushiki Kaisha Plasma processing apparatus having circular waveguide, and plasma processing method
JP4441038B2 (ja) * 2000-02-07 2010-03-31 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
TW497367B (en) * 2000-03-30 2002-08-01 Tokyo Electron Ltd Plasma processing apparatus
US6677549B2 (en) * 2000-07-24 2004-01-13 Canon Kabushiki Kaisha Plasma processing apparatus having permeable window covered with light shielding film
JP4598247B2 (ja) 2000-08-04 2010-12-15 東京エレクトロン株式会社 ラジアルアンテナ及びそれを用いたプラズマ装置
CN1293789C (zh) * 2001-01-18 2007-01-03 东京毅力科创株式会社 等离子体装置及等离子体生成方法
JP3625197B2 (ja) * 2001-01-18 2005-03-02 東京エレクトロン株式会社 プラズマ装置およびプラズマ生成方法
JP4209612B2 (ja) 2001-12-19 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置
JP4204799B2 (ja) 2002-04-09 2009-01-07 東京エレクトロン株式会社 プラズマ処理装置
JP2005019346A (ja) * 2003-06-30 2005-01-20 Tokyo Electron Ltd プラズマ処理装置、これに用いるプラズマ放射アンテナ及び導波管
JP2007035411A (ja) * 2005-07-26 2007-02-08 Hitachi High-Technologies Corp プラズマ処理装置
JP5208547B2 (ja) * 2008-03-19 2013-06-12 東京エレクトロン株式会社 電力合成器およびマイクロ波導入機構
JP2010050046A (ja) * 2008-08-25 2010-03-04 Hitachi High-Technologies Corp プラズマ処理装置
US8502372B2 (en) * 2010-08-26 2013-08-06 Lsi Corporation Low-cost 3D face-to-face out assembly
US20120186747A1 (en) * 2011-01-26 2012-07-26 Obama Shinji Plasma processing apparatus
JP6356415B2 (ja) * 2013-12-16 2018-07-11 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
JP6478748B2 (ja) * 2015-03-24 2019-03-06 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1550035A (zh) * 2001-09-27 2004-11-24 ���������ƴ���ʽ���� 电磁场供给装置及等离子体处理装置
JP2007035412A (ja) * 2005-07-26 2007-02-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2012044035A (ja) * 2010-08-20 2012-03-01 Hitachi High-Technologies Corp 半導体製造装置
JP2012049353A (ja) * 2010-08-27 2012-03-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2012190899A (ja) * 2011-03-09 2012-10-04 Hitachi High-Technologies Corp プラズマ処理装置

Also Published As

Publication number Publication date
JP7139528B2 (ja) 2022-09-20
JPWO2021220551A1 (https=) 2021-11-04
KR102749255B1 (ko) 2025-01-03
KR20210134602A (ko) 2021-11-10
TW202141562A (zh) 2021-11-01
CN113874978A (zh) 2021-12-31
US20230352274A1 (en) 2023-11-02
WO2021220329A1 (ja) 2021-11-04
WO2021220551A1 (ja) 2021-11-04
TWI800798B (zh) 2023-05-01

Similar Documents

Publication Publication Date Title
CN113874978B (zh) 等离子处理装置
TWI573167B (zh) Microwave radiation mechanism and surface wave plasma processing device
CN102655708B (zh) 表面波等离子体产生用天线及表面波等离子体处理装置
US20120090782A1 (en) Microwave plasma source and plasma processing apparatus
US5173641A (en) Plasma generating apparatus
JP6624833B2 (ja) マイクロ波プラズマ源およびプラズマ処理装置
KR102521817B1 (ko) 플라스마 처리 장치
JP2014116187A (ja) マイクロ波放射アンテナ、マイクロ波プラズマ源およびプラズマ処理装置
US20140374025A1 (en) Microwave plasma device
JP2012190899A (ja) プラズマ処理装置
JP7637315B2 (ja) プラズマ処理装置
JP7001456B2 (ja) プラズマ処理装置
JP2760845B2 (ja) プラズマ処理装置及びその方法
JP3720005B2 (ja) プラズマ処理装置及びプラズマ処理方法
JP2007035411A (ja) プラズマ処理装置
JP4900768B2 (ja) プラズマ発生装置及びプラズマ処理装置
JPH09293599A (ja) プラズマ処理方法および装置
JP2019121514A (ja) プラズマ処理装置
JP2018006256A (ja) マイクロ波プラズマ処理装置
JP3736054B2 (ja) プラズマ処理装置
JP6700128B2 (ja) マイクロ波プラズマ処理装置
JP2004363247A (ja) プラズマ処理装置
US20230238217A1 (en) Plasma processing apparatus
JP2007018819A (ja) 処理装置および処理方法
JP2017123346A (ja) マイクロ波放射アンテナ、マイクロ波プラズマ源およびプラズマ処理装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant