KR102749255B1 - 플라스마 처리 장치 - Google Patents

플라스마 처리 장치 Download PDF

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Publication number
KR102749255B1
KR102749255B1 KR1020217016706A KR20217016706A KR102749255B1 KR 102749255 B1 KR102749255 B1 KR 102749255B1 KR 1020217016706 A KR1020217016706 A KR 1020217016706A KR 20217016706 A KR20217016706 A KR 20217016706A KR 102749255 B1 KR102749255 B1 KR 102749255B1
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South Korea
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ring resonator
plasma
microwave
plate line
microwaves
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KR1020217016706A
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Korean (ko)
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KR20210134602A (ko
Inventor
히토시 다무라
노리히코 이케다
첸핀 쉬
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주식회사 히타치하이테크
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H01J37/32256—Tuning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020217016706A 2020-04-27 2020-12-24 플라스마 처리 장치 Active KR102749255B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPPCT/JP2020/017927 2020-04-27
PCT/JP2020/017927 WO2021220329A1 (ja) 2020-04-27 2020-04-27 プラズマ処理装置
PCT/JP2020/048422 WO2021220551A1 (ja) 2020-04-27 2020-12-24 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20210134602A KR20210134602A (ko) 2021-11-10
KR102749255B1 true KR102749255B1 (ko) 2025-01-03

Family

ID=78331846

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217016706A Active KR102749255B1 (ko) 2020-04-27 2020-12-24 플라스마 처리 장치

Country Status (6)

Country Link
US (1) US20230352274A1 (https=)
JP (1) JP7139528B2 (https=)
KR (1) KR102749255B1 (https=)
CN (1) CN113874978B (https=)
TW (1) TWI800798B (https=)
WO (2) WO2021220329A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102927556B1 (ko) 2023-01-18 2026-02-19 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7736413B2 (ja) * 2021-12-02 2025-09-09 東京エレクトロン株式会社 プラズマ処理装置及びマイクロ波放射源
JP7762593B2 (ja) * 2022-02-16 2025-10-30 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
KR102864349B1 (ko) * 2022-06-21 2025-09-24 주식회사 히타치하이테크 플라스마 처리 장치 및 가열 장치
TWI899592B (zh) 2022-10-19 2025-10-01 日商日立全球先端科技股份有限公司 電漿處理裝置
JP2024101724A (ja) * 2023-01-18 2024-07-30 東京エレクトロン株式会社 プラズマ処理装置
KR102838566B1 (ko) * 2023-04-05 2025-07-24 세메스 주식회사 마이크로파 안테나, 이를 포함하는 전력 공급 장치 및 기판 처리 장치
TW202514705A (zh) 2023-05-30 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於將能量提供至具有多個功率信號輸入之電漿腔室的系統以及半導體處理系統
CN116390320A (zh) * 2023-05-30 2023-07-04 安徽农业大学 一种电子回旋共振放电装置及应用
JP2025011417A (ja) * 2023-07-11 2025-01-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN119732180A (zh) * 2023-07-27 2025-03-28 株式会社日立高新技术 等离子处理装置以及等离子处理方法
WO2026028241A1 (ja) * 2024-07-29 2026-02-05 株式会社日立ハイテク プラズマ処理装置
KR102909817B1 (ko) 2024-09-23 2026-01-07 세메스 주식회사 마이크로파 안테나, 마이크로파 생성 장치, 및 가열 장치

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JP2003188152A (ja) 2001-12-19 2003-07-04 Tokyo Electron Ltd プラズマ処理装置およびプラズマ生成方法
US20040045674A1 (en) 2000-08-04 2004-03-11 Nobuo Ishii Radial antenna and plasma device using it
US20050087304A1 (en) 2002-04-09 2005-04-28 Nobuo Ishii Plasma processing system
JP2007035412A (ja) * 2005-07-26 2007-02-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2007035411A (ja) * 2005-07-26 2007-02-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2012044035A (ja) * 2010-08-20 2012-03-01 Hitachi High-Technologies Corp 半導体製造装置
JP2012049353A (ja) * 2010-08-27 2012-03-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2012190899A (ja) * 2011-03-09 2012-10-04 Hitachi High-Technologies Corp プラズマ処理装置

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JP4441038B2 (ja) * 2000-02-07 2010-03-31 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
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Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040045674A1 (en) 2000-08-04 2004-03-11 Nobuo Ishii Radial antenna and plasma device using it
JP2003188152A (ja) 2001-12-19 2003-07-04 Tokyo Electron Ltd プラズマ処理装置およびプラズマ生成方法
US20050087304A1 (en) 2002-04-09 2005-04-28 Nobuo Ishii Plasma processing system
JP2007035412A (ja) * 2005-07-26 2007-02-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2007035411A (ja) * 2005-07-26 2007-02-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2012044035A (ja) * 2010-08-20 2012-03-01 Hitachi High-Technologies Corp 半導体製造装置
JP2012049353A (ja) * 2010-08-27 2012-03-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2012190899A (ja) * 2011-03-09 2012-10-04 Hitachi High-Technologies Corp プラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102927556B1 (ko) 2023-01-18 2026-02-19 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치

Also Published As

Publication number Publication date
JP7139528B2 (ja) 2022-09-20
JPWO2021220551A1 (https=) 2021-11-04
KR20210134602A (ko) 2021-11-10
TW202141562A (zh) 2021-11-01
CN113874978B (zh) 2025-03-18
CN113874978A (zh) 2021-12-31
US20230352274A1 (en) 2023-11-02
WO2021220329A1 (ja) 2021-11-04
WO2021220551A1 (ja) 2021-11-04
TWI800798B (zh) 2023-05-01

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