JP7138895B2 - 高分子電解質膜、これを含む電気化学電池及びフロー電池、高分子電解質膜用組成物、及び高分子電解質膜の製造方法 - Google Patents
高分子電解質膜、これを含む電気化学電池及びフロー電池、高分子電解質膜用組成物、及び高分子電解質膜の製造方法 Download PDFInfo
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Description
[化学式1]
-SO3 -X
[化学式1]
-SO3 -X
[化学式1]
-SO3 -X
[化学式1]
-SO3 -X
全溶液の重量を基準として、ナフィオン(Nafion)25重量%、BiCl3 1.25重量%(ナフィオンのスルホン酸の基準で、BiCl3の当量は0.25当量、ナフィオンに対して5重量%)及び0.5M硫酸水溶液を全溶液の重量の基準で5重量%で、残量の溶媒(68.75重量%)に添加して1日間常温で混合した。
全溶液の重量を基準として、ナフィオン(Nafion)25重量%、BiCl3 0.25重量%(ナフィオンのスルホン酸の基準で、BiCl3の当量は0.05当量、ナフィオンに対して1重量%)及び0.5M硫酸水溶液を全溶液の重量の基準で5重量%で、残量の溶媒(69.75重量%)に添加して1日間常温で混合した。
BiCl3のないことを除き、実施例1と同一な方法で厚さが50μmまたは125μmである高分子電解質膜を製造した。
Oxkem社の常用電解液(1.6M V3.5+、2M H2SO4水溶液)を使用して活性面積が5×5cm2であり、流速が10ml/minであるフロー電池に実施例1及び比較例1の高分子電解質膜をそれぞれ適用したフロー電池を製作した。
バナジウム透過度(Vanadium permeability)の測定
A:膜の有効面積(effective area of the membrane)(cm2)
L:膜の厚さ(thickness of the membrane)(cm)
V(=VMg):溶液の体積(volume of the solution)(cm3)
CA(=Cv):濃縮側のバナジウムイオン濃度(concentration of vanadium ions in enrichment side)(mol L-1)
CB(=CMg):欠乏側のバナジウムイオン濃度(concentration of vanadium ions in deficiency side)(mol L-1)
t:試験時間(test time)
[条件]
1)VB(欠乏側の体積(volume of deficiency side))=一定
2)CA(value of employing a large volume of solution)=一定
0.5Mの硫酸水溶液にBiCl3 5重量%を添加した溶液(製造例1)と、0.5Mの硫酸水溶液に酸化ビスマス5重量%を添加した溶液(製造例2)とをそれぞれ図6及び図7に示した。
21:陰極 22:陽極
31:陰極流入口 32:陽極流入口
41:陰極排出口 42:陽極排出口
Claims (11)
- スルホン酸陰イオン(-SO3 -)を含むイオン伝導性高分子を含む高分子電解質膜であって、
前記スルホン酸陰イオンは、ビスマス陽イオンとイオン結合されたものであり、
前記イオン伝導性高分子は、ナフィオン(登録商標)であり、
前記スルホン酸陰イオンに対し、前記ビスマス陽イオンの含量は、0.2当量以上0.5当量以下である、
高分子電解質膜。 - 前記ビスマス陽イオンのいずれか一つは、前記スルホン酸陰イオン2以上とイオン結合されて架橋を形成するものである請求項1に記載の高分子電解質膜。
- アノード、カソード、及び前記アノードとカソードとの間に備えられた請求項1または2に記載の高分子電解質膜を含む、電気化学電池。
- アノード活物質を含むアノード電解液が注入及び排出されるアノード;カソード活物質を含むカソード電解液が注入及び排出されるカソード;及び前記アノードとカソードとの間に配置された請求項1ないし3のいずれか一項に記載の高分子電解質膜を含むものである、フロー電池。
- 前記アノード電解液及びカソード電解液は、それぞれ独立的にビスマス塩を含むものである請求項4に記載のフロー電池。
- 請求項4又は5に記載のフロー電池を単位電池として含む、電池モジュール。
- ビスマス塩、下記化学式1で表されるイオン伝導性機能基を有するイオン伝導性高分子及び溶媒を含み、
前記イオン伝導性高分子は、ナフィオン(登録商標)であり、
前記イオン伝導性機能基を有するイオン伝導性高分子の総重量を基準として、前記ビスマス塩の含量は、4重量%以上10重量%以下のものである、
高分子電解質膜用組成物
[化学式1]
-SO3 -X
化学式1において、Xは、陽イオンである。 - 前記ビスマス塩は、ビスマス硝酸塩、ビスマス塩化塩、ビスマス硫化塩、ビスマス硫酸塩、ビスマス炭酸塩及び水酸化ビスマスの少なくとも一つを含むものである請求項7に記載の高分子電解質膜用組成物。
- 酸をさらに含む請求項7又は8に記載の高分子電解質膜用組成物。
- 前記酸のモル濃度は、0.1M以上0.5M以下のものである請求項9に記載の高分子電解質膜用組成物。
- ビスマス塩、下記化学式1で表されるイオン伝導性機能基を有するイオン伝導性高分子及び溶媒を含む組成物を用いて高分子電解質膜を製造するステップを含む、高分子電解質膜の製造方法であって、
前記イオン伝導性高分子は、ナフィオン(登録商標)であり、
前記イオン伝導性機能基を有するイオン伝導性高分子の総重量を基準として、前記ビスマス塩の含量は、4重量%以上10重量%以下のものである、方法
[化学式1]
-SO3 -X
化学式1において、Xは、陽イオンである。
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KR1020170077890A KR102098447B1 (ko) | 2017-06-20 | 2017-06-20 | 고분자 전해질막, 이를 포함하는 전기화학 전지 및 흐름 전지, 고분자 전해질막용 조성물, 및 고분자 전해질막의 제조방법 |
KR10-2017-0077890 | 2017-06-20 | ||
PCT/KR2018/006795 WO2018236094A1 (ko) | 2017-06-20 | 2018-06-15 | 고분자 전해질막, 이를 포함하는 전기화학 전지 및 흐름 전지, 고분자 전해질막용 조성물, 및 고분자 전해질막의 제조방법 |
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