JP7137913B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7137913B2
JP7137913B2 JP2017123146A JP2017123146A JP7137913B2 JP 7137913 B2 JP7137913 B2 JP 7137913B2 JP 2017123146 A JP2017123146 A JP 2017123146A JP 2017123146 A JP2017123146 A JP 2017123146A JP 7137913 B2 JP7137913 B2 JP 7137913B2
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layer
oxide
transistor
conductive
insulating layer
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JP2019009259A (ja
JP2019009259A5 (enExample
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隆徳 松嵜
健輔 吉住
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2017123146A 2017-06-23 2017-06-23 半導体装置 Active JP7137913B2 (ja)

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JP2017123146A JP7137913B2 (ja) 2017-06-23 2017-06-23 半導体装置
JP2022140753A JP7439196B2 (ja) 2017-06-23 2022-09-05 半導体装置

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JP2017123146A JP7137913B2 (ja) 2017-06-23 2017-06-23 半導体装置

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JP2019009259A JP2019009259A (ja) 2019-01-17
JP2019009259A5 JP2019009259A5 (enExample) 2020-08-06
JP7137913B2 true JP7137913B2 (ja) 2022-09-15

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JP2022140753A Active JP7439196B2 (ja) 2017-06-23 2022-09-05 半導体装置

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI678793B (zh) * 2019-01-31 2019-12-01 華邦電子股份有限公司 記憶元件及其製造方法
US10872811B2 (en) 2019-03-27 2020-12-22 Winbond Electronics Corp. Memory device and manufacturing method thereof
JP7193428B2 (ja) 2019-08-09 2022-12-20 東京エレクトロン株式会社 エッチング方法及び基板処理装置
WO2021111243A1 (ja) * 2019-12-06 2021-06-10 株式会社半導体エネルギー研究所 半導体装置および電子機器
JP7382848B2 (ja) 2020-02-20 2023-11-17 東京エレクトロン株式会社 基板処理方法および基板処理装置
WO2024236396A1 (ja) * 2023-05-12 2024-11-21 株式会社半導体エネルギー研究所 半導体装置、記憶装置、半導体装置の作製方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011108882A (ja) 2009-11-18 2011-06-02 Mitsui Mining & Smelting Co Ltd 酸化物半導体を用いた薄膜トランジスタおよびその製造方法
JP2012248823A (ja) 2011-05-26 2012-12-13 Sk Hynix Inc 不揮発性メモリ装置及びその製造方法
JP2013247143A (ja) 2012-05-23 2013-12-09 Semiconductor Energy Lab Co Ltd 半導体装置
JP2016063027A (ja) 2014-09-17 2016-04-25 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP2017034144A (ja) 2015-08-04 2017-02-09 株式会社東芝 半導体記憶装置
JP2017092432A (ja) 2015-11-17 2017-05-25 株式会社東芝 酸化物半導体及び半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013065382A (ja) * 2011-09-20 2013-04-11 Toshiba Corp 不揮発性半導体記憶装置
US9634097B2 (en) * 2014-11-25 2017-04-25 Sandisk Technologies Llc 3D NAND with oxide semiconductor channel
JP6430302B2 (ja) * 2015-03-13 2018-11-28 東芝メモリ株式会社 不揮発性半導体記憶装置
US9773787B2 (en) * 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011108882A (ja) 2009-11-18 2011-06-02 Mitsui Mining & Smelting Co Ltd 酸化物半導体を用いた薄膜トランジスタおよびその製造方法
JP2012248823A (ja) 2011-05-26 2012-12-13 Sk Hynix Inc 不揮発性メモリ装置及びその製造方法
JP2013247143A (ja) 2012-05-23 2013-12-09 Semiconductor Energy Lab Co Ltd 半導体装置
JP2016063027A (ja) 2014-09-17 2016-04-25 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP2017034144A (ja) 2015-08-04 2017-02-09 株式会社東芝 半導体記憶装置
JP2017092432A (ja) 2015-11-17 2017-05-25 株式会社東芝 酸化物半導体及び半導体装置

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JP7439196B2 (ja) 2024-02-27
JP2019009259A (ja) 2019-01-17
JP2022171745A (ja) 2022-11-11

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