JP7134566B2 - チップ破壊ユニット、チップの強度の比較方法 - Google Patents
チップ破壊ユニット、チップの強度の比較方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/02—Details
- G01N3/04—Chucks
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/20—Investigating strength properties of solid materials by application of mechanical stress by applying steady bending forces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/02—Details not specific for a particular testing method
- G01N2203/06—Indicating or recording means; Sensing means
- G01N2203/0641—Indicating or recording means; Sensing means using optical, X-ray, ultraviolet, infrared or similar detectors
- G01N2203/0647—Image analysis
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/02—Details not specific for a particular testing method
- G01N2203/06—Indicating or recording means; Sensing means
- G01N2203/067—Parameter measured for estimating the property
- G01N2203/0676—Force, weight, load, energy, speed or acceleration
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- Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
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Description
1a 表面
1b 裏面
3a 一端
3b 他端
2 チップ破壊ユニット
4 チップ挟持ユニット
4a,4b チップ支持部
4c 初期位置
6a,6b 面
8 移動ユニット
10 モータ
12 スケール
14 グラフ
Claims (2)
- 第1の面を有した第1のチップ支持部と、該第1の面に対面する第2の面を有した第2のチップ支持部と、を有し、該第1のチップ支持部の該第1の面と、該第2のチップ支持部の該第2の面と、の間にU字状に湾曲されたチップを挟持できるチップ挟持ユニットと、
該第1のチップ支持部と、該第2のチップ支持部と、を互いに近接する方向に相対移動させる移動ユニットと、
該移動ユニットを作動させて該第1のチップ支持部と、該第2のチップ支持部と、を近接する方向に相対移動させる際に生じるチップの破壊を検出する検出ユニットと、
を備え、
該移動ユニットは、モータを有し、
該検出ユニットは、該モータのトルクの変化に基づいてチップの破壊を検出す ることを特徴とするチップ破壊ユニット。 - 第1の面を有しチップの一端側を支持する第1のチップ支持部と、該第1の面に対面する第2の面を有し該チップの他端側を支持する第2のチップ支持部と、を有するチップ挟持ユニットと、
該チップの破壊を検出する検出ユニットと、
を備えるチップ破壊ユニットを用いて得られたチップの強度を複数のチップ間で比較するチップ強度の比較方法であって、
チップの一端側と、該一端側とは反対側の他端側と、が互いに対面するように該チップをU字状に湾曲させ、該第1のチップ支持部の該第1の面と、該第2のチップ支持部の該第2の面と、の間に湾曲した該チップを挟持するチップ挟持ステップと、
該チップ挟持ステップを実施した後、該第1のチップ支持部と、該第2のチップ支持部と、を互いに近接する方向に相対移動させる移動ステップと、
該移動ステップの実施中に該検出ユニットにより該チップの破壊を検出するチップ破壊検出ステップと、
該移動ステップを開始してから該チップの破壊を検出するまでに要した時間、または該チップの破壊を検出した時の該第1のチップ支持部と、該第2のチップ支持部と、のそれぞれの位置に基づいて該チップの強度を得る強度取得ステップと、を含み、
複数のチップに対して該チップ挟持ステップと、該移動ステップと、該チップ破壊検出ステップと、該強度取得ステップと、を実施し、得られた各チップの強度を比較する強度比較ステップをさらに含むことを特徴とするチップ強度の比較方法。
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JP2018168780A JP7134566B2 (ja) | 2018-09-10 | 2018-09-10 | チップ破壊ユニット、チップの強度の比較方法 |
KR1020190102436A KR102695740B1 (ko) | 2018-09-10 | 2019-08-21 | 칩 파괴 유닛, 칩의 강도의 비교 방법 |
CN201910776800.5A CN110890286B (zh) | 2018-09-10 | 2019-08-22 | 芯片破坏单元、芯片强度的比较方法 |
TW108131901A TWI814898B (zh) | 2018-09-10 | 2019-09-04 | 晶片破壞單元、晶片之強度的比較方法 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011033376A (ja) | 2009-07-30 | 2011-02-17 | Seiko Epson Corp | 試験装置、試験方法 |
JP2013242164A (ja) | 2012-05-17 | 2013-12-05 | Asahi Glass Co Ltd | 脆性板の耐久試験方法、及び脆性板の耐久試験装置 |
WO2014171247A1 (ja) | 2013-04-15 | 2014-10-23 | 旭硝子株式会社 | 曲げ試験方法、シート物の製造方法、曲げ試験装置、脆性シート、素子付き脆性シート、および電子デバイス |
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DE10220343B4 (de) * | 2002-05-07 | 2007-04-05 | Atg Test Systems Gmbh & Co. Kg Reicholzheim | Vorrichtung und Verfahren zum Prüfen von Leiterplatten und Prüfsonde |
JP4415893B2 (ja) * | 2005-04-05 | 2010-02-17 | 信越半導体株式会社 | 半導体ウエーハの機械的強度測定装置及び機械的強度測定方法 |
JP5948032B2 (ja) * | 2011-09-09 | 2016-07-06 | 株式会社ディスコ | ブレーキング装置 |
JP5954254B2 (ja) | 2013-05-13 | 2016-07-20 | 信越半導体株式会社 | 半導体ウェーハの評価システム及び評価方法 |
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- 2019-08-22 CN CN201910776800.5A patent/CN110890286B/zh active Active
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Patent Citations (3)
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JP2011033376A (ja) | 2009-07-30 | 2011-02-17 | Seiko Epson Corp | 試験装置、試験方法 |
JP2013242164A (ja) | 2012-05-17 | 2013-12-05 | Asahi Glass Co Ltd | 脆性板の耐久試験方法、及び脆性板の耐久試験装置 |
WO2014171247A1 (ja) | 2013-04-15 | 2014-10-23 | 旭硝子株式会社 | 曲げ試験方法、シート物の製造方法、曲げ試験装置、脆性シート、素子付き脆性シート、および電子デバイス |
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TWI814898B (zh) | 2023-09-11 |
CN110890286A (zh) | 2020-03-17 |
CN110890286B (zh) | 2024-03-19 |
KR102695740B1 (ko) | 2024-08-14 |
JP2020041885A (ja) | 2020-03-19 |
KR20200029348A (ko) | 2020-03-18 |
TW202011494A (zh) | 2020-03-16 |
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