JP7133476B2 - テルル化亜鉛カドミウム単結晶基板およびその製造方法 - Google Patents
テルル化亜鉛カドミウム単結晶基板およびその製造方法 Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims description 183
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 title claims description 86
- 239000000758 substrate Substances 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 31
- 229910052793 cadmium Inorganic materials 0.000 claims description 25
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 22
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 17
- 239000011701 zinc Substances 0.000 claims description 17
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 claims description 11
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 31
- 239000000463 material Substances 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 17
- 239000000969 carrier Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 5
- 239000003708 ampul Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 239000002178 crystalline material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 238000004497 NIR spectroscopy Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Description
1)テルル化亜鉛カドミウム単結晶基板の製造方法であって、テルル化亜鉛カドミウム結晶インゴットを育成すること、前記育成したテルル化亜鉛カドミウム結晶インゴットをインゴットのまま熱処理すること、前記熱処理後のテルル化亜鉛カドミウム結晶インゴットから面方位が{111}面の主面を有するように単結晶ウエハを切り出すことを含み、前記熱処理の温度が800℃以上1000℃以下で、かつ前記テルル化亜鉛カドミウム結晶インゴットの上端部と下端部の間の領域における最大温度と最小温度の差が20℃以内であり、前記熱処理後のテルル化亜鉛カドミウム結晶インゴットから切り出した単結晶ウエハから多結晶化した部分を除いて単結晶のみからなるテルル化亜鉛カドミウム単結晶ウエハとし、前記テルル化亜鉛カドミウム単結晶ウエハに対してダイシングを行い、複数のテルル化亜鉛カドミウム単結晶基板を得た後、前記複数のテルル化亜鉛カドミウム単結晶基板のそれぞれについて、表面の電子の移動度寿命積(μτ積)を測定し、前記μτ積が1.0×10 -3 cm 2 /V以上であるテルル化亜鉛カドミウム単結晶基板を選別して求めた表面の総面積が、前記μτ積を測定した複数の前記テルル化亜鉛カドミウム単結晶基板の表面の総面積の50%以上であり、II族元素におけるZnの割合が2.0at%~10.0at%であることを特徴とするテルル化亜鉛カドミウム単結晶基板の製造方法、
2)前記テルル化亜鉛カドミウム結晶インゴットの育成方法が、垂直温度勾配凝固(VGF)法であることを特徴とする前記1)に記載のテルル化亜鉛カドミウム単結晶基板の製造方法、
3)前記テルル化亜鉛カドミウム結晶インゴットの熱処理を、前記テルル化亜鉛カドミウム結晶インゴットの育成後、前記テルル化亜鉛カドミウム結晶インゴットを育成した炉内で連続して行うことを特徴とする前記1)または2)に記載のテルル化亜鉛カドミウム単結晶基板の製造方法。
{Zn/(Cd+Zn)}×100 (at%) (1)
(Cd、Znは、それぞれ、CdZnTe単結晶中のCd、Znの原子数)
まず、VGF法によりCdZnTe結晶インゴットの育成を行った。図1に示した結晶育成炉を用い、成長容器となる石英アンプルの結晶成長部に配置した内径5インチ(約127mm)のpBN製のルツボ内に、原子数比で組成がCd0.95Zn0.05Te(II族元素中のZn:5at%)となるように原料を充填した。また、石英アンプルのリザーバ部には、雰囲気蒸気圧制御用のCdを別途配置した上で、石英アンプルを真空封止した。この石英アンプルを結晶育成炉の内部へ装着し、図1に示すような温度勾配を設定して炉内の加熱を行った。ルツボ内の原料が融解した状態で、融液の温度勾配を1.3℃/cmに維持した状態を保ちつつルツボの温度を徐々に低下させることにより、融液表面から下方に向かって成長が進むようにCdZnTe結晶インゴットの育成を行った。
実施例1と同様の条件でCdZnTe結晶インゴットを育成し、続けて同一の炉内で、CdZnTe結晶インゴットの熱処理を行った。実施例2では、結晶インゴットが存在している領域内における熱処理時の温度の最大値は968.8℃、最小値は952.0であり、その差は16.8℃であった。この状態で1200分間の熱処理を行った後、実施例1と同様に結晶インゴットを室温まで徐冷して取り出し、{111}面で円板ウエハ状に切り出して、表面研削、研磨を行った。続いて、ウエハ状の結晶から多結晶化している部分等を除いて単結晶のみからなるウエハとした。
実施例1と同様の条件でCdZnTe結晶インゴットを育成し、続けて同一の炉内で、CdZnTe結晶インゴットの熱処理を行った。実施例3では、結晶インゴットが存在している領域内における熱処理時の温度の最大値は961.0℃、最小値は946.0であり、その差は15.0℃であった。この状態で1200分間の熱処理を行った後、実施例1と同様に結晶インゴットを室温まで徐冷して取り出し、{111}面で円板ウエハ状に切り出して、表面研削、研磨を行った。続いて、ウエハ状の結晶から多結晶化している部分等を除いて単結晶のみからなるウエハとした。
実施例1と同様の条件でCdZnTe結晶インゴットを育成し、続けて同一の炉内で、CdZnTe結晶インゴットの熱処理を行った。このときの炉内の結晶インゴット近傍の結晶成長方向に沿った温度分布は図2の破線に示すとおりである。比較例1では、結晶インゴットが存在している領域内における熱処理時の温度の最大値は999.8℃、最小値は943.2であり、その差は56.6℃であった。比較のため、この比較例1における炉内の結晶インゴット近傍の結晶成長方向に沿った温度分布も併せて図2に示す。この状態で1200分間の熱処理を行った後、実施例1と同様に結晶インゴットを室温まで徐冷して取り出し、{111}面で円板ウエハ状に切り出して、表面研削、研磨を行った。続いて、ウエハ状の結晶から多結晶化している部分等を除いて単結晶のみからなるウエハとした。
101 pBNルツボ
102 原料融液(育成結晶)
103 リザーバ用Cd
110 成長容器(石英アンプル)
111 結晶成長部
112 リザーバ部
130 加熱装置
Claims (3)
- テルル化亜鉛カドミウム単結晶基板の製造方法であって、
テルル化亜鉛カドミウム結晶インゴットを育成すること、
前記育成したテルル化亜鉛カドミウム結晶インゴットをインゴットのまま熱処理すること、
前記熱処理後のテルル化亜鉛カドミウム結晶インゴットから面方位が{111}面の主面を有するように単結晶ウエハを切り出すことを含み、
前記熱処理の温度が800℃以上1000℃以下で、かつ前記テルル化亜鉛カドミウム結晶インゴットの上端部と下端部の間の領域における最大温度と最小温度の差が20℃以内であり、
前記熱処理後のテルル化亜鉛カドミウム結晶インゴットから切り出した単結晶ウエハから多結晶化した部分を除いて単結晶のみからなるテルル化亜鉛カドミウム単結晶ウエハとし、前記テルル化亜鉛カドミウム単結晶ウエハに対してダイシングを行い、複数のテルル化亜鉛カドミウム単結晶基板を得た後、前記複数のテルル化亜鉛カドミウム単結晶基板のそれぞれについて、表面の電子の移動度寿命積(μτ積)を測定し、前記μτ積が1.0×10 -3 cm 2 /V以上であるテルル化亜鉛カドミウム単結晶基板を選別して求めた表面の総面積が、前記μτ積を測定した複数の前記テルル化亜鉛カドミウム単結晶基板の表面の総面積の50%以上であり、II族元素におけるZnの割合が2.0at%~10.0at%であることを特徴とするテルル化亜鉛カドミウム単結晶基板の製造方法。 - 前記テルル化亜鉛カドミウム結晶インゴットの育成方法が、垂直温度勾配凝固(VGF)法であることを特徴とする請求項1に記載のテルル化亜鉛カドミウム単結晶基板の製造方法。
- 前記テルル化亜鉛カドミウム結晶インゴットの熱処理を、前記テルル化亜鉛カドミウム結晶インゴットの育成後、前記テルル化亜鉛カドミウム結晶インゴットを育成した炉内で連続して行うことを特徴とする請求項1または2に記載のテルル化亜鉛カドミウム単結晶基板の製造方法。
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