JP7113219B2 - 撮像装置 - Google Patents

撮像装置 Download PDF

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Publication number
JP7113219B2
JP7113219B2 JP2018007237A JP2018007237A JP7113219B2 JP 7113219 B2 JP7113219 B2 JP 7113219B2 JP 2018007237 A JP2018007237 A JP 2018007237A JP 2018007237 A JP2018007237 A JP 2018007237A JP 7113219 B2 JP7113219 B2 JP 7113219B2
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Prior art keywords
voltage
photoelectric conversion
signal
counter electrode
pixel electrode
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JP2018007237A
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Japanese (ja)
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JP2018125848A5 (enExample
JP2018125848A (ja
Inventor
真一 町田
雅史 村上
健富 徳原
真明 柳田
三四郎 宍戸
学 中田
眞澄 井土
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Publication of JP2018125848A5 publication Critical patent/JP2018125848A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/11—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/131—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing infrared wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
  • Light Receiving Elements (AREA)
JP2018007237A 2017-02-03 2018-01-19 撮像装置 Active JP7113219B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017018776 2017-02-03
JP2017018776 2017-02-03

Publications (3)

Publication Number Publication Date
JP2018125848A JP2018125848A (ja) 2018-08-09
JP2018125848A5 JP2018125848A5 (enExample) 2021-01-28
JP7113219B2 true JP7113219B2 (ja) 2022-08-05

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JP2018007237A Active JP7113219B2 (ja) 2017-02-03 2018-01-19 撮像装置

Country Status (3)

Country Link
US (3) US10477121B2 (enExample)
JP (1) JP7113219B2 (enExample)
CN (1) CN108389870A (enExample)

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CN108389870A (zh) * 2017-02-03 2018-08-10 松下知识产权经营株式会社 摄像装置
TWI689892B (zh) * 2018-05-18 2020-04-01 瑞昱半導體股份有限公司 基於前景影像的背景虛化方法與電子裝置
TW202035577A (zh) 2018-09-06 2020-10-01 日商富士軟片股份有限公司 結構體、光感測器及圖像顯示裝置
WO2020121677A1 (ja) * 2018-12-14 2020-06-18 パナソニックＩｐマネジメント株式会社 カメラシステム
JP7386442B2 (ja) * 2019-01-08 2023-11-27 パナソニックＩｐマネジメント株式会社 撮像装置
CN113016089B (zh) * 2019-02-08 2025-05-02 松下知识产权经营株式会社 光电转换元件及摄像装置
JP7353783B2 (ja) * 2019-04-16 2023-10-02 キヤノン株式会社 撮像装置とその制御方法及び撮像素子とその制御方法
JP7599100B2 (ja) * 2020-04-27 2024-12-13 パナソニックＩｐマネジメント株式会社 撮像装置
WO2021220820A1 (ja) 2020-04-27 2021-11-04 パナソニックＩｐマネジメント株式会社 撮像装置
WO2022014721A1 (ja) 2020-07-17 2022-01-20 富士フイルム株式会社 光電変換素子、撮像素子、光センサ、及び化合物
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US20180227510A1 (en) 2018-08-09
US20200036915A1 (en) 2020-01-30
JP2018125848A (ja) 2018-08-09
US11233955B2 (en) 2022-01-25
CN108389870A (zh) 2018-08-10
US10477121B2 (en) 2019-11-12
US20210195122A1 (en) 2021-06-24
US10951839B2 (en) 2021-03-16

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