JP7100769B2 - 縦型炭化珪素パワーmosfetおよびigbtならびにその製造方法 - Google Patents
縦型炭化珪素パワーmosfetおよびigbtならびにその製造方法 Download PDFInfo
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Description
4H-SiCが、パワーエレクトロニクスすなわちSiCパワーMOSFETに対して好ましいポリタイプであるのは、4H-SiC成長技術の進歩およびその魅力的な電子特性、たとえば、6H-SiCまたは3C-SiCなどの他の利用可能なウエハスケールポリタイプと比べてより大きいバンドギャップおよびより高いキャリア移動度の故である。これらのSiCパワーMOSFETは既に市販されているが、特に、オン抵抗Ronをさらに低減するために反転チャネル移動度に関して大きな改善の余地がある。
ゲートは、より低い電圧で駆動することができ、その結果、より小さな酸化物フィールドをもたらし、これは、閾値安定性および酸化物長期信頼性を改善し、
チャネル抵抗を低減するためにトランジスタチャネル長の積極的なスケーリングは必要とされず、したがって、短チャネル効果を回避することができる。
図3A~図3Fは、本発明による炭化珪素パワーMOSFET1におけるゲートスタックのプロセス集積の概略図である。
1.進歩した技術の利点(例えば、エピタキシャル成長、デバイス処理)および反転チャネルに対する4H-SiCの電子特性(例えばバンドギャップ)を利用し、
2.3C-SiC/酸化物界面の低い界面欠陥密度の結果、キャリア散乱がより少なくなり、したがって、反転層の電子移動度が増強され、
3.より高い電子移動度は、SiCパワーMOSFETの、より低いRonを可能にし、それは、特に、商業的に高く関連性のある電圧クラス(≦1.7kV)についてオン状態電力損失およびスイッチング損失を低減するために必須であり、
4.成長させた3C-SiC層を、その場で、すなわち窒素(N)などのn型ドーパントを用いて、ドープすることができ、それは、界面カウンタドープ層を形成することにより、Ditを低減することを支援するかもしれない。
Claims (9)
- 縦型炭化珪素パワーMOSFET(1)であって、
ドレインとしてのn+型の4H-SiC基板(7)と、
前記4H-SiC基板(7)上にエピタキシャル成長させられ、ドリフト領域として機能するn-型の4H-SiCエピ層(6)と、
前記ドリフト領域に注入された、p++型のソース領域(2)、p型のウェル領域(3)、p型のチャネル領域(4)、およびn++型のコンタクト領域(5)と、
前記ソース領域(2)および前記ドリフト領域からゲート酸化物(9)によって絶縁されるゲート(8)と、
界面(11)において前記4H-SiCエピ層(6)と前記ゲート酸化物(9)との間にある高移動度層(10)とを備え、前記高移動度層(10)の垂直方向の厚みは0.1nm~50nmの範囲にあり、
前記ゲート(8)は金属ゲートであり、
前記高移動度層(10)は、エピタキシャル3C-SiCで形成されることにおいて特徴付けられる、縦型炭化珪素パワーMOSFET(1)。 - 前記4H-SiC基板(7)は{0001}配向4H-SiC基板(7)であり、前記4H-SiCエピ層(6)は{0001}配向4H-SiCエピ層(6)である、請求項1に記載の縦型炭化珪素パワーMOSFET(1)。
- 前記高移動度層(10)はn型である、請求項1または2に記載の縦型炭化珪素パワーMOSFET(1)。
- 前記縦型炭化珪素パワーMOSFETのキャリアは、n-型の4H-SiCエピ層(6)で輸送されるが、前記高移動度層では輸送されない、請求項1~3のいずれか1項に記載の縦型炭化珪素パワーMOSFET(1)。
- 前記高移動度層(10)の垂直方向の厚みは0.5nm~10nmの範囲にある、請求項1~4のいずれか1項に記載の縦型炭化珪素パワーMOSFET(1)。
- 縦型炭化珪素パワー絶縁ゲートバイポーラトランジスタ(21)であって、
フィールドストップ層としてn型の4H-SiC基板(27)と、
前記4H-SiC基板(27)上にエピタキシャル成長させられ、ドリフト領域として機能するn-型の4H-SiCエピ層(26)と、
前記ドリフト領域内に注入された、p++型のエミッタ領域(22)、p型のウェル領域(23)、p型のチャネル領域(24)、およびn++型のコンタクト領域(25)と、
前記エミッタ領域(22)および前記ドリフト領域からゲート酸化物(29)によって絶縁される金属ゲート(28)と、
前記フィールドストップ層(27)上において前記ドリフト領域と対面するp+型のコレクタ層(212)と、
界面(211)において、前記4H-SiCエピ層(26)と前記ゲート酸化物(29)との間にある高移動度層(210)とを備え、前記高移動度層(210)の垂直方向の厚みは0.1nm~50nmの範囲であり、
前記高移動度層(210)は、エピタキシャル3C-SiCで形成される、縦型炭化珪素パワー絶縁ゲートバイポーラトランジスタ(21)。 - 前記高移動度層(210)の垂直方向の厚みは0.5nm~10nmの範囲にある、請求項6に記載の縦型炭化珪素パワー絶縁ゲートバイポーラトランジスタ(21)。
- 縦型炭化珪素パワーMOSFETの製造方法であって、
n+型の4H-SiC基板を提供することと、
前記4H-SiC基板上にドリフト領域として働くn-型の4H-SiCエピ層をエピタキシャル成長させることと、
前記ドリフト領域内に、p++型のソース領域とp型のウェル領域とp型のチャネル領域とn++型のコンタクト領域とを注入することと、
化学気相成長(CVD)または有機金属化学気相成長(MOCVD)または分子線エピタキシー(MBE)のうちの1つを用いて、前記注入された基板表面の上に3C-SiCの高移動度層をエピタキシャル成長させることとを含み、前記高移動度層の垂直方向の厚みは、0.1nm~50nmの範囲であり、前記製造方法はさらに、
前記高移動度層を部分的に酸化することと、
金属ゲートを形成するためのエッチングプロセスを実行することと、
ゲート酸化物としてゲート絶縁物を堆積することと、
前記ゲート酸化物上に金属ゲート(8)を形成することと、
前記ソース領域と接触するためのオーミックコンタクトを形成することとを含む、縦型炭化珪素パワーMOSFETの製造方法。 - 縦型炭化珪素パワー絶縁ゲートバイポーラトランジスタ(IGBT)の製造方法であって、
フィールドストップ層としてn型の4H-SiC基板を設けることと、
前記4H-SiC基板上にドリフト領域として働くn-型の4H-SiCエピ層をエピタキシャル成長させることと、
前記フィールドストップ層上において前記ドリフト領域と対面するp+型のコレクタ層を堆積させることと、
前記ドリフト領域内に、p++型のエミッタ領域とp型のウェル領域とp型のチャネル領域とn++型のコンタクト領域を注入することと、
化学気相成長(CVD)または有機金属化学気相成長(MOCVD)または分子線エピタキシー(MBE)のうちの1つを用いて、前記注入されたウェハ表面上に3C-SiCの高移動度層をエピタキシャル成長させることとを含み、前記高移動度層の垂直方向の厚みは、0.1nm~50nmの範囲であり、前記製造方法はさらに、
前記高移動度層を部分的に酸化することと、
金属ゲートを形成するためのエッチングプロセスを実行することと、
ゲート酸化物としてゲート絶縁物を堆積することと、
前記ゲート酸化物上に前記金属ゲートを形成することと、
前記エミッタ領域と接触するためのオーミックコンタクトを形成することとを含む、縦型炭化珪素パワー絶縁ゲートバイポーラトランジスタ(IGBT)の製造方法。
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