JP7097971B2 - 計量ターゲット情報コンテンツの増強 - Google Patents

計量ターゲット情報コンテンツの増強 Download PDF

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JP7097971B2
JP7097971B2 JP2020531728A JP2020531728A JP7097971B2 JP 7097971 B2 JP7097971 B2 JP 7097971B2 JP 2020531728 A JP2020531728 A JP 2020531728A JP 2020531728 A JP2020531728 A JP 2020531728A JP 7097971 B2 JP7097971 B2 JP 7097971B2
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measurement
target
weighing
periodic
layer
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JP2021506133A5 (https=
JP2021506133A (ja
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エラン アミット
アムノン マナッセン
ナダフ グトマン
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Software Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Artificial Intelligence (AREA)
  • Medical Informatics (AREA)
  • Evolutionary Computation (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2020531728A 2017-12-12 2018-09-24 計量ターゲット情報コンテンツの増強 Active JP7097971B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762597900P 2017-12-12 2017-12-12
US62/597,900 2017-12-12
US16/132,157 US11085754B2 (en) 2017-12-12 2018-09-14 Enhancing metrology target information content
US16/132,157 2018-09-14
PCT/US2018/052333 WO2019118039A1 (en) 2017-12-12 2018-09-24 Enhancing metrology target information content

Publications (3)

Publication Number Publication Date
JP2021506133A JP2021506133A (ja) 2021-02-18
JP2021506133A5 JP2021506133A5 (https=) 2021-11-04
JP7097971B2 true JP7097971B2 (ja) 2022-07-08

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JP2020531728A Active JP7097971B2 (ja) 2017-12-12 2018-09-24 計量ターゲット情報コンテンツの増強

Country Status (7)

Country Link
US (1) US11085754B2 (https=)
JP (1) JP7097971B2 (https=)
KR (1) KR102362670B1 (https=)
CN (1) CN111433559B (https=)
SG (1) SG11201913458TA (https=)
TW (1) TW201934958A (https=)
WO (1) WO2019118039A1 (https=)

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CN113439240A (zh) * 2019-02-19 2021-09-24 Asml控股股份有限公司 量测系统、光刻设备和方法
US11353799B1 (en) * 2019-07-23 2022-06-07 Kla Corporation System and method for error reduction for metrology measurements
WO2021054928A1 (en) * 2019-09-16 2021-03-25 Kla Corporation Periodic semiconductor device misregistration metrology system and method
US11415898B2 (en) * 2019-10-14 2022-08-16 Kla Corporation Signal-domain adaptation for metrology
CN110823812B (zh) * 2019-10-29 2020-11-24 上海交通大学 基于机器学习的散射介质成像方法及系统
US12100574B2 (en) * 2020-07-01 2024-09-24 Kla Corporation Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures
US12250503B2 (en) * 2020-12-24 2025-03-11 Applied Materials Israel Ltd. Prediction of electrical properties of a semiconductor specimen
US20220284342A1 (en) * 2021-03-04 2022-09-08 Applied Materials, Inc. Systems and methods for process chamber health monitoring and diagnostics using virtual model
CN113095045B (zh) * 2021-04-20 2023-11-10 河海大学 一种基于逆向操作的中文数学应用题数据增强方法
US12181271B2 (en) * 2022-02-17 2024-12-31 Kla Corporation Estimating in-die overlay with tool induced shift correction

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JP2011155302A (ja) 2003-02-22 2011-08-11 Kla-Tencor Corp 散乱計測を用いてオーバレイ誤差を検出する装置および方法
JP2015528922A (ja) 2012-06-26 2015-10-01 ケーエルエー−テンカー コーポレイション 装置様散乱測定法のオーバーレイターゲット
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JP2011155302A (ja) 2003-02-22 2011-08-11 Kla-Tencor Corp 散乱計測を用いてオーバレイ誤差を検出する装置および方法
JP2015528922A (ja) 2012-06-26 2015-10-01 ケーエルエー−テンカー コーポレイション 装置様散乱測定法のオーバーレイターゲット
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Also Published As

Publication number Publication date
TW201934958A (zh) 2019-09-01
KR102362670B1 (ko) 2022-02-14
WO2019118039A1 (en) 2019-06-20
CN111433559B (zh) 2022-09-20
KR20200088909A (ko) 2020-07-23
US20190178630A1 (en) 2019-06-13
CN111433559A (zh) 2020-07-17
US11085754B2 (en) 2021-08-10
JP2021506133A (ja) 2021-02-18
SG11201913458TA (en) 2020-07-29

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