CN111433559B - 增强计量目标信息内容 - Google Patents

增强计量目标信息内容 Download PDF

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Publication number
CN111433559B
CN111433559B CN201880078008.6A CN201880078008A CN111433559B CN 111433559 B CN111433559 B CN 111433559B CN 201880078008 A CN201880078008 A CN 201880078008A CN 111433559 B CN111433559 B CN 111433559B
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China
Prior art keywords
metrology
target
periodic structure
measurement
layer
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CN201880078008.6A
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English (en)
Chinese (zh)
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CN111433559A (zh
Inventor
E·阿米特
A·玛纳森
N·古特曼
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Software Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Artificial Intelligence (AREA)
  • Medical Informatics (AREA)
  • Evolutionary Computation (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
CN201880078008.6A 2017-12-12 2018-09-24 增强计量目标信息内容 Active CN111433559B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762597900P 2017-12-12 2017-12-12
US62/597,900 2017-12-12
US16/132,157 US11085754B2 (en) 2017-12-12 2018-09-14 Enhancing metrology target information content
US16/132,157 2018-09-14
PCT/US2018/052333 WO2019118039A1 (en) 2017-12-12 2018-09-24 Enhancing metrology target information content

Publications (2)

Publication Number Publication Date
CN111433559A CN111433559A (zh) 2020-07-17
CN111433559B true CN111433559B (zh) 2022-09-20

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CN201880078008.6A Active CN111433559B (zh) 2017-12-12 2018-09-24 增强计量目标信息内容

Country Status (7)

Country Link
US (1) US11085754B2 (https=)
JP (1) JP7097971B2 (https=)
KR (1) KR102362670B1 (https=)
CN (1) CN111433559B (https=)
SG (1) SG11201913458TA (https=)
TW (1) TW201934958A (https=)
WO (1) WO2019118039A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113439240A (zh) * 2019-02-19 2021-09-24 Asml控股股份有限公司 量测系统、光刻设备和方法
US11353799B1 (en) * 2019-07-23 2022-06-07 Kla Corporation System and method for error reduction for metrology measurements
WO2021054928A1 (en) * 2019-09-16 2021-03-25 Kla Corporation Periodic semiconductor device misregistration metrology system and method
US11415898B2 (en) * 2019-10-14 2022-08-16 Kla Corporation Signal-domain adaptation for metrology
CN110823812B (zh) * 2019-10-29 2020-11-24 上海交通大学 基于机器学习的散射介质成像方法及系统
US12100574B2 (en) * 2020-07-01 2024-09-24 Kla Corporation Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures
US12250503B2 (en) * 2020-12-24 2025-03-11 Applied Materials Israel Ltd. Prediction of electrical properties of a semiconductor specimen
US20220284342A1 (en) * 2021-03-04 2022-09-08 Applied Materials, Inc. Systems and methods for process chamber health monitoring and diagnostics using virtual model
CN113095045B (zh) * 2021-04-20 2023-11-10 河海大学 一种基于逆向操作的中文数学应用题数据增强方法
US12181271B2 (en) * 2022-02-17 2024-12-31 Kla Corporation Estimating in-die overlay with tool induced shift correction

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1537703A (en) * 1976-01-27 1979-01-04 Rca Corp Fabrication of rectangular relief profiles in photoresist
JP4366458B2 (ja) * 1998-02-27 2009-11-18 新オプトウエア株式会社 光情報記録媒体
JP2000218708A (ja) * 1999-01-01 2000-08-08 Three D Syst Inc 立体造形装置および方法
JP3881125B2 (ja) * 1999-02-17 2007-02-14 レーザーテック株式会社 段差測定装置並びにこの段差測定装置を用いたエッチングモニタ装置及びエッチング方法
JP4199408B2 (ja) * 2000-04-28 2008-12-17 富士フイルム株式会社 波長変換素子、波長変換素子の製造方法、及び波長変換モジュール
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7068833B1 (en) * 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
JP5180419B2 (ja) 2000-08-30 2013-04-10 ケーエルエー−テンカー・コーポレーション 重ね合わせマーク、重ね合わせマークの設計方法および重ね合わせ測定の方法
JP3878027B2 (ja) * 2002-02-18 2007-02-07 東京エレクトロン株式会社 偏光解析方法及び光学的膜厚測定装置
JP2004118894A (ja) * 2002-09-24 2004-04-15 Victor Co Of Japan Ltd ディスク状磁気記録媒体
US7833640B2 (en) * 2005-08-19 2010-11-16 Hitachi Global Storage Technologies Netherlands B.V. Intermediate tri-layer structure for perpendicular recording media
US7863763B2 (en) 2005-11-22 2011-01-04 Asml Netherlands B.V. Binary sinusoidal sub-wavelength gratings as alignment marks
US7671990B1 (en) 2006-07-28 2010-03-02 Kla-Tencor Technologies Corporation Cross hatched metrology marks and associated method of use
CA2600900A1 (en) * 2006-09-21 2008-03-21 Nippon Sheet Glass Company, Limited Transmissive diffraction grating, and spectral separation element and spectroscope using the same
JP4897006B2 (ja) * 2008-03-04 2012-03-14 エーエスエムエル ネザーランズ ビー．ブイ． アラインメントマークを設ける方法、デバイス製造方法及びリソグラフィ装置
NL2003179A1 (nl) * 2008-07-18 2010-01-19 Asml Netherlands Bv Lithographic apparatus and device manufacturing method and scatterometry method and measurement system used therein.
US9709903B2 (en) 2011-11-01 2017-07-18 Kla-Tencor Corporation Overlay target geometry for measuring multiple pitches
US8879073B2 (en) * 2012-02-24 2014-11-04 Kla-Tencor Corporation Optical metrology using targets with field enhancement elements
US8913237B2 (en) 2012-06-26 2014-12-16 Kla-Tencor Corporation Device-like scatterometry overlay targets
CN103631761B (zh) * 2012-08-29 2018-02-27 睿励科学仪器（上海）有限公司 并行处理架构进行矩阵运算并用于严格波耦合分析的方法
US9093458B2 (en) * 2012-09-06 2015-07-28 Kla-Tencor Corporation Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets
WO2014062972A1 (en) 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
JP2014107348A (ja) * 2012-11-26 2014-06-09 Renesas Electronics Corp 半導体装置
WO2014194095A1 (en) * 2013-05-30 2014-12-04 Kla-Tencor Corporation Combined imaging and scatterometry metrology
US9490182B2 (en) * 2013-12-23 2016-11-08 Kla-Tencor Corporation Measurement of multiple patterning parameters
KR102285895B1 (ko) * 2014-03-31 2021-08-04 케이엘에이 코포레이션 산란측정 계측을 이용한 초점 측정
KR102574171B1 (ko) * 2014-08-29 2023-09-06 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법, 타겟 및 기판
WO2016123552A1 (en) 2015-01-30 2016-08-04 Kla-Tencor Corporation Device metrology targets and methods
US9903711B2 (en) * 2015-04-06 2018-02-27 KLA—Tencor Corporation Feed forward of metrology data in a metrology system
TWI715582B (zh) 2015-05-19 2021-01-11 美商克萊譚克公司 用於疊對測量之形貌相位控制
US10615084B2 (en) 2016-03-01 2020-04-07 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter, associated with a change in a physical configuration, using measured pixel optical characteristic values
US10551749B2 (en) 2017-01-04 2020-02-04 Kla-Tencor Corporation Metrology targets with supplementary structures in an intermediate layer

Also Published As

Publication number Publication date
TW201934958A (zh) 2019-09-01
KR102362670B1 (ko) 2022-02-14
WO2019118039A1 (en) 2019-06-20
KR20200088909A (ko) 2020-07-23
US20190178630A1 (en) 2019-06-13
JP7097971B2 (ja) 2022-07-08
CN111433559A (zh) 2020-07-17
US11085754B2 (en) 2021-08-10
JP2021506133A (ja) 2021-02-18
SG11201913458TA (en) 2020-07-29

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