JP7092456B2 - 連続ｃｖｄプロセスによる低フッ素タングステンの堆積 - Google Patents

連続ｃｖｄプロセスによる低フッ素タングステンの堆積 Download PDF

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JP7092456B2
JP7092456B2 JP2016104837A JP2016104837A JP7092456B2 JP 7092456 B2 JP7092456 B2 JP 7092456B2 JP 2016104837 A JP2016104837 A JP 2016104837A JP 2016104837 A JP2016104837 A JP 2016104837A JP 7092456 B2 JP7092456 B2 JP 7092456B2
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tungsten
substrate
containing precursor
layer
bulk
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Japanese (ja)
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JP2017008412A5 (https=
JP2017008412A (ja
Inventor
アダム・ジャンドル
サンジャイ・ゴピナス
シャオラン・バ
ラシーナ・フマユン
ミハル・ダネク
ローレンス・シュロス
ティアンファ・ユ
シュルティ・ビベク・トンバレ
カイハン・アビディ・アシュティアニ
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Lam Research Corp
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Lam Research Corp
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Priority claimed from US14/723,270 external-priority patent/US9613818B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2016104837A 2015-05-27 2016-05-26 連続ｃｖｄプロセスによる低フッ素タングステンの堆積 Active JP7092456B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/723,270 2015-05-27
US14/723,270 US9613818B2 (en) 2015-05-27 2015-05-27 Deposition of low fluorine tungsten by sequential CVD process
US201662328759P 2016-04-28 2016-04-28
US62/328,759 2016-04-28

Publications (3)

Publication Number Publication Date
JP2017008412A JP2017008412A (ja) 2017-01-12
JP2017008412A5 JP2017008412A5 (https=) 2021-08-26
JP7092456B2 true JP7092456B2 (ja) 2022-06-28

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JP2016104837A Active JP7092456B2 (ja) 2015-05-27 2016-05-26 連続ｃｖｄプロセスによる低フッ素タングステンの堆積

Country Status (3)

Country Link
JP (1) JP7092456B2 (https=)
KR (1) KR102397797B1 (https=)
TW (1) TWI747825B (https=)

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* Cited by examiner, † Cited by third party
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TWI672737B (zh) * 2013-12-27 2019-09-21 Lam Research Corporation 允許低電阻率鎢特徵物填充之鎢成核程序
JP6788545B2 (ja) * 2017-04-26 2020-11-25 東京エレクトロン株式会社 タングステン膜を形成する方法
JP6946463B2 (ja) * 2017-06-05 2021-10-06 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ワードライン抵抗を低下させる方法
TW201908511A (zh) * 2017-07-13 2019-03-01 美商應用材料股份有限公司 用於沉積鎢成核層的方法及設備
KR102424993B1 (ko) 2017-09-11 2022-07-25 에스케이하이닉스 주식회사 반도체 장치의 제조방법
US10669160B2 (en) * 2018-04-30 2020-06-02 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Heterogeneous wet synthesis process for preparation of high purity tungsten pentahalide
KR102806630B1 (ko) * 2018-05-03 2025-05-12 램 리써치 코포레이션 3d nand 구조체들에 텅스텐 및 다른 금속들을 증착하는 방법
KR102513403B1 (ko) * 2018-07-30 2023-03-24 주식회사 원익아이피에스 텅스텐 증착 방법
KR102544654B1 (ko) * 2018-08-17 2023-06-16 샌트랄 글래스 컴퍼니 리미티드 육불화텅스텐의 제조 방법
JP7138518B2 (ja) 2018-08-31 2022-09-16 東京エレクトロン株式会社 成膜方法及び成膜システム
CN111162039A (zh) * 2018-11-08 2020-05-15 长鑫存储技术有限公司 金属导电结构及半导体器件的制备方法
WO2020123987A1 (en) 2018-12-14 2020-06-18 Lam Research Corporation Atomic layer deposition on 3d nand structures
KR20200099112A (ko) 2019-02-13 2020-08-21 세종대학교산학협력단 Ald 공정에서 금속 전구체 환원용 환원제 조성물 및 금속 박막의 형성 방법
WO2020170865A1 (ja) * 2019-02-20 2020-08-27 東京エレクトロン株式会社 半導体装置の製造方法
WO2020210260A1 (en) 2019-04-11 2020-10-15 Lam Research Corporation High step coverage tungsten deposition
WO2020214732A1 (en) * 2019-04-19 2020-10-22 Lam Research Corporation Rapid flush purging during atomic layer deposition
US11447864B2 (en) * 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition
WO2021030836A1 (en) 2019-08-12 2021-02-18 Lam Research Corporation Tungsten deposition
JP2021038442A (ja) * 2019-09-04 2021-03-11 東京エレクトロン株式会社 基板処理方法及び基板処理装置
CN114946018A (zh) * 2020-06-30 2022-08-26 应用材料公司 在低温下的选择性钨沉积
KR102847592B1 (ko) 2020-11-05 2025-08-18 세종대학교산학협력단 텅스텐 전구체, 이를 이용한 텅스텐 박막 증착 방법 및 증착 장치
KR20230104542A (ko) * 2020-11-20 2023-07-10 램 리써치 코포레이션 텅스텐 저 저항 펄싱된 cvd
US11515200B2 (en) * 2020-12-03 2022-11-29 Applied Materials, Inc. Selective tungsten deposition within trench structures
JP7733133B2 (ja) * 2021-05-07 2025-09-02 インテグリス・インコーポレーテッド モリブデンまたはタングステン材料の堆積方法
CN114420533B (zh) * 2021-12-08 2024-10-18 武汉新芯集成电路股份有限公司 在半导体晶片上制备钨的方法
CN119230478A (zh) * 2023-06-30 2024-12-31 北京北方华创微电子装备有限公司 沉积钨塞的工艺方法及半导体器件

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JP2009024252A (ja) 2007-05-15 2009-02-05 Applied Materials Inc タングステン材料の原子層堆積法
JP2015067869A (ja) 2013-09-30 2015-04-13 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

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US8551885B2 (en) * 2008-08-29 2013-10-08 Novellus Systems, Inc. Method for reducing tungsten roughness and improving reflectivity
KR101356332B1 (ko) * 2010-03-19 2014-02-04 노벨러스 시스템즈, 인코포레이티드 낮은 저항 및 강한 미소-접착 특성을 가진 텅스텐 박막의 증착 방법
US8975142B2 (en) * 2013-04-25 2015-03-10 Globalfoundries Inc. FinFET channel stress using tungsten contacts in raised epitaxial source and drain

Patent Citations (3)

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JP2008303466A (ja) 2001-10-10 2008-12-18 Applied Materials Inc 一連の堆積技術を用いる耐火性金属層を堆積する方法
JP2009024252A (ja) 2007-05-15 2009-02-05 Applied Materials Inc タングステン材料の原子層堆積法
JP2015067869A (ja) 2013-09-30 2015-04-13 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Also Published As

Publication number Publication date
KR102397797B1 (ko) 2022-05-12
TWI747825B (zh) 2021-12-01
JP2017008412A (ja) 2017-01-12
TW201715067A (zh) 2017-05-01
KR20160140448A (ko) 2016-12-07

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