JP7090462B2 - 近赤外発光蛍光体、蛍光体混合物、発光素子、および発光装置 - Google Patents
近赤外発光蛍光体、蛍光体混合物、発光素子、および発光装置 Download PDFInfo
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- JP7090462B2 JP7090462B2 JP2018082590A JP2018082590A JP7090462B2 JP 7090462 B2 JP7090462 B2 JP 7090462B2 JP 2018082590 A JP2018082590 A JP 2018082590A JP 2018082590 A JP2018082590 A JP 2018082590A JP 7090462 B2 JP7090462 B2 JP 7090462B2
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- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7712—Borates
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- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/7792—Aluminates
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
Description
原料として、Cr2O3、H3BO3、Sc2O3を最終的なCr:Sc:B:Oのモル組成比が、0.01:0.99:1:3、0.05:0.95:1:3、0.1:0.9:1:3となるように秤量し、乳鉢を用いて混合した。この混合物をアルミナ製坩堝にいれ、電気炉に大気中1200℃で5時間焼成した。焼成物を水洗浄、乾燥、分級処理後、実施例1に該当する近赤外線発光蛍光体Sc0.99BO3:Cr0.01、Sc0.95BO3:Cr0.05、Sc0.9BO3:Cr0.1を得た。線源がCuKα線のX線回折装置(XRD6100、島津製作所社製)を用いてX線回折パターンを測定した。蛍光分光光度計(FP6500、JASCO社製)で波長450nm励起および590nm励起による発光特性を測定した。得られた蛍光体のX線回折パターンを図1に示す。図1から、得られた蛍光体において異相は認められず、高品位な結晶が形成されたことが確認された。
(3種の蛍光体混合物)
以下、上記実施例1で得た近赤外線発光蛍光体ScBO3:Crを、他の蛍光体と混合して蛍光体混合物を得た。本実施例では、3種類の蛍光体を混合した。すなわち、重量比率で、Y3Al5O12:Ce蛍光体:Y2.9Ga5O12 : Cr0.1蛍光体:近赤外線発光蛍光体ScBO3:Crを1:4:6で混合した蛍光体混合物を得た。得られた蛍光体混合物について、波長450nm励起による発光特性の測定結果を図4に示す。
(4種の蛍光体混合物)
本実施例では、4種類の蛍光体を混合した。すなわち、重量比で、Y3Al5O12:Ce蛍光体:Y2.9Ga5O12 : Cr0.1蛍光体:CaAlSiN3蛍光体:近赤外線発光蛍光体ScBO3:Crを1:4:0.1:6で混合した蛍光体混合物を得た。また、同じ重量比率で、CaAlSiN3蛍光体をSrCaAlSiN3蛍光体に替えて混合した蛍光体混合物を得た。得られた蛍光体混合物について、波長450nm励起による発光特性の測定結果を各々図5および図6に示す。
Claims (5)
- 一般式ScBO3:Cr(Scの一部は、希土類元素および第13族元素から選ばれる少なくとも一つの元素で置換されていてもよい)を含む蛍光体混合物であって、
重量比率で(Y 3 Al 5 O 12 :Ce蛍光体):(Y 3 Ga 5 O 12 :Cr蛍光体):(ScBO 3 :Cr蛍光体)が1:4:6で混合されていることを特徴とする、
蛍光体混合物。 - 一般式ScBO 3 :Cr(Scの一部は、希土類元素および第13族元素から選ばれる少なくとも一つの元素で置換されていてもよい)を含む蛍光体混合物であって、
重量比率で(Y 3 Al 5 O 12 :Ce蛍光体):(Y 3 Ga 5 O 12 :Cr蛍光体):(CaAlSiN 3 蛍光体):(ScBO 3 :Cr蛍光体)が1:4:0.1:6で混合されていることを特徴とする、
蛍光体混合物。 - 一般式ScBO 3 :Cr(Scの一部は、希土類元素および第13族元素から選ばれる少なくとも一つの元素で置換されていてもよい)を含む蛍光体混合物であって、
重量比率で(Y 3 Al 5 O 12 :Ce蛍光体):(Y 3 Ga 5 O 12 :Cr蛍光体):(SrCaAlSiN 3 蛍光体):(ScBO 3 :Cr蛍光体)が1:4:0.1:6で混合されていることを特徴とする、
蛍光体混合物。 - 請求項1~3のいずれかに記載の蛍光体混合物を備えることを特徴とする
発光素子。 - 請求項1~3のいずれかに記載の蛍光体混合物を備えることを特徴とする
発光装置。
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JP2018082590A JP7090462B2 (ja) | 2018-04-23 | 2018-04-23 | 近赤外発光蛍光体、蛍光体混合物、発光素子、および発光装置 |
CN201910324194.3A CN110387235A (zh) | 2018-04-23 | 2019-04-22 | 近红外发光荧光体、荧光体混合物、发光元件以及发光装置 |
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WO2020207773A1 (en) | 2019-04-12 | 2020-10-15 | Lumileds Holding B.V. | Novel nir broadband emitting phosphors for infrared spectroscopy |
KR102408688B1 (ko) * | 2020-09-14 | 2022-06-16 | (주)올릭스 | 파장 가변 초광대역 근적외 발광 장치 |
JP2022071389A (ja) * | 2020-10-28 | 2022-05-16 | 株式会社日立ハイテク | 蛍光体、それを用いた光源、生化学分析装置、及び蛍光体の製造方法 |
KR102339912B1 (ko) * | 2021-05-31 | 2021-12-17 | 유스테크 유한책임회사 | 가시광-근적외선 경계 부근까지 태양광 유사 스펙트럼을 갖는 발광 소자 |
KR102401586B1 (ko) * | 2021-11-26 | 2022-05-25 | 유스테크 유한책임회사 | 표준광 구현 led 광원 모듈 |
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WO2014046173A1 (ja) | 2012-09-21 | 2014-03-27 | 住友大阪セメント株式会社 | 複合波長変換粉体、複合波長変換粉体含有樹脂組成物及び発光装置 |
CN107573937A (zh) | 2017-08-01 | 2018-01-12 | 东南大学 | 一种用于近红外led的荧光粉材料及其制备方法 |
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JP2008174621A (ja) * | 2007-01-17 | 2008-07-31 | Mitsubishi Chemicals Corp | 蛍光体、蛍光体含有組成物、発光装置、画像表示装置、及び照明装置 |
JP2013110155A (ja) * | 2011-11-17 | 2013-06-06 | Sanken Electric Co Ltd | 発光装置 |
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WO2014046173A1 (ja) | 2012-09-21 | 2014-03-27 | 住友大阪セメント株式会社 | 複合波長変換粉体、複合波長変換粉体含有樹脂組成物及び発光装置 |
CN107573937A (zh) | 2017-08-01 | 2018-01-12 | 东南大学 | 一种用于近红外led的荧光粉材料及其制备方法 |
Non-Patent Citations (2)
Title |
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LAI, S. T., et al.,ScBO3:Cr - A Room Temperature Near-Infrared Tunable Laser,IEEE Journal of Quantum Electoronics,1986年,vol. QE-22, no. 10,pp. 1931-1933 |
Qiyue Shao, et al.,RSC Advances,2018年03月28日,vol. 8,pp. 12035 - 12042,DOI: 10.1039/c8ra01084f |
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